DONGBUANAM SEMICONDUCTOR INC.
|DONGBUANAM SEMICONDUCTOR INC. Patent applications|
|Patent application number||Title||Published|
|20090102053||METAL LINE STACKING STRUCTURE IN SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF - The method for forming a metal line stacking structure according to a preferred embodiment of the present invention comprises: sequentially forming a first barrier metal and a first metal layer on a lower dielectric layer that is disposed over a semiconductor substrate, and performing a plasma treatment; forming a second barrier metal on the plasma-treated first metal layer; selectively etching the second barrier metal, the first metal layer, and the first barrier metal to form a metal line layer including the second barrier metal, the first metal layer, and the first barrier metal, which respectively have a predetermined width; and sintering the metal line layer to raise a reaction between the first metal layer and the second barrier metal, thereby generating a metal compound layer.||04-23-2009|
Patent applications by DONGBUANAM SEMICONDUCTOR INC.