| 20100032768 | TRANSISTOR OF IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A transistor of an image sensor and a method for manufacturing the same include simultaneously forming a device isolation layer at a boundary between a first conductive transistor region having a second conductive well formed therein and a second conductive transistor region having a first conductive well formed therein, and a trench dielectric layer at a junction transistor region having no conductive well formed therein, and then simultaneously forming a first gate pattern at the first conductive transistor region, a second gate pattern at the second conductive transistor region and a laminated layer at the junction transistor region, and then forming a bipolar junction in the laminated layer by sequentially implanting a first conductive dopant and a second conductive dopant into the laminated layer. | 02-11-2010 |
