DISCO CORPORATION Patent applications |
Patent application number | Title | Published |
20150368832 | GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE - Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio. | 12-24-2015 |
20150251902 | MEMS DEVICE CHIP MANUFACTURING METHOD - A MEMS device chip manufacturing method including a grinding step of grinding a device forming area of a wafer to thereby form a recess and an annular reinforcing portion surrounding the recess, a MEMS device forming step of performing any processing including etching to the wafer after performing the grinding step to thereby form a plurality of MEMS devices partitioned by a plurality of crossing division lines in the device forming area, and a dividing step of dividing the wafer along the division lines after performing the MEMS device forming step to thereby manufacture a plurality of MEMS device chips. | 09-10-2015 |
20150175313 | PACKAGING MATERIAL - An embodiment of the present invention provides a packaging material including a bag body formed of a sheet in which to house a packaging target and a filter disposed at a vent of the bag body. The filter includes a porous film that is so disposed as to seal up the vent and prevents the entry of water and dust while permitting the passage of the air, and a dehumidification layer that is formed inside the porous film in such a manner as to cover the whole surface of the porous film and absorbs moisture that passes through the porous film to enter. | 06-25-2015 |
20150076662 | COMPOSITE SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, COMPOSITE SUBSTRATE, AND SEMICONDUCTOR ELEMENT - Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured. | 03-19-2015 |
20140361307 | LIGHT EMITTING CHIP - A light emitting chip including a device chip having a transparent substrate and a light emitting layer formed on a front side of the transparent substrate, and a transparent resin layer provided on a back side of the transparent substrate. The transparent resin layer contains transparent particles for transmitting and scattering light emitted from the light emitting layer. | 12-11-2014 |
20140353676 | LIGHT EMITTING CHIP - A light emitting chip includes a device chip having a light emitting layer on a front surface side and a transparent member bonded to a back surface side of the device chip. The transparent member is transmissive to light emitted from the light emitting layer. The transparent member is formed into a frustum shape having a first surface, a second surface that has a smaller area than the first surface, and an inclined sidewall that connects the first surface and the second surface. | 12-04-2014 |
20140334511 | LASER PROCESSING METHOD - A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.2, a positioning step of relatively positioning the focusing lens and the single crystal substrate in the direction along the optical axis of the focusing lens so that the focal point of the pulsed laser beam is set at a desired position in the direction along the thickness of the single crystal substrate, and a shield tunnel forming step of applying the pulsed laser beam to the single crystal substrate so as to focus the pulsed laser beam at the focal point set in the single crystal substrate thereby forming a shield tunnel extending between the focal point and a beam incident surface to which the pulsed laser beam is applied. | 11-13-2014 |
20140322847 | WAFER PROCESSING METHOD - A wafer processing method including a modified layer forming step of applying a laser beam having a transmission wavelength to a substrate from the back side of the substrate along division lines. The modified layer forming step includes the steps of making the polarization plane of linearly polarized light of the laser beam parallel to the direction perpendicular to each division line, shifting the beam center of the laser beam from the optical axis of a focusing lens of a focusing unit for focusing the laser beam, in the direction perpendicular to each division line, and shifting the focal point of the laser beam by the focusing lens in the same direction as the direction where the beam center of the laser beam has been shifted. | 10-30-2014 |
20140315372 | WAFER PROCESSING METHOD - A wafer processing method including a wafer supporting step of attaching a front side of a dicing tape formed of synthetic resin to a back side of a wafer and supporting a peripheral portion of the dicing tape to an annular frame, a dicing tape heating step of heating a back side of the dicing tape attached to the wafer to soften the dicing tape, thereby flattening the back side of the dicing tape, and a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer through the dicing tape from the back side thereof along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a modified layer inside the wafer along each division line. | 10-23-2014 |
20140311471 | CUTTING APPARATUS HAVING BLADE COVER - A blade cover covers a cutting blade mounted on a spindle. The blade cover has a bottom portion formed with an opening from which the lower end of the cutting blade projects. A cutting fluid is supplied to the upper surface of a workpiece in the periphery of the opening of the blade cover. A discharge opening is formed in the blade cover. Air is sucked from the discharge opening by a vacuum source. The cutting fluid supplied to the upper surface of the workpiece is taken from the opening into the blade cover in association with the rotation of the cutting blade and thereafter discharged from the discharge opening to the outside of the blade cover. Accordingly, scattering of the cutting fluid can be suppressed. | 10-23-2014 |
20140306234 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting diode whose front surface is supported and fixed on a package mounting surface and a transparent member bonded to the back surface of the light emitting diode. The light emitting diode has a light emitting layer on the front surface side. | 10-16-2014 |
20140305918 | LASER PROCESSING APPARATUS - A laser processing apparatus including a dust discharging unit for discharging dust generated by the application of a laser beam from a focusing unit to a workpiece. The dust discharging unit includes a dust collector provided below the focusing unit and a suction unit connected to the dust collector. The dust collector has a U-shaped configuration composed of a rectangular top wall having an opening for allowing the pass of the laser beam applied from the focusing unit, a first side wall projecting downward from one side edge of the top wall, and a second side wall projecting downward from the other side edge of the top wall so as to be opposed to the first side wall. The suction unit includes a suction duct having one end connected to the dust collector and the other end connected to a vacuum source. | 10-16-2014 |
20140305917 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus includes a chuck table for holding a workpiece. A laser beam is applied to the workpiece. A laser beam oscillating unit oscillates the laser beam and a processing head having a focusing lens focuses the laser beam. A dust collecting unit collects debris generated by the application of the laser beam. The dust collecting unit includes a suction passage having an opening for allowing passage of the laser beam to be focused onto the workpiece by the focusing lens. The suction passage extends symmetrically with respect to the opening, and a vacuum source draws the debris. The suction passage has a first end and a second end selectively connected to the vacuum source. | 10-16-2014 |
20140305916 | PROCESSING METHOD FOR PLATE-SHAPED WORKPIECE - A method of processing a plate-shaped workpiece includes: a positioning step of mounting the plate-shaped workpiece on a support plate; a joining step of irradiating an outer peripheral portion of the plate-shaped workpiece mounted on the support plate with a laser beam to form a fusion bond region where the plate-shaped workpiece is fusion-bonded to the support plate at the outer peripheral portion of the plate-shaped workpiece, thereby fixing the plate-shaped workpiece onto the support plate; and a processing step of processing the plate-shaped workpiece after the joining step. | 10-16-2014 |
20140301631 | PLATELIKE WORKPIECE WITH ALIGNMENT MARK - A platelike workpiece having an alignment mark formed on the front side thereof and adapted to be recognized by an imaging unit included in an alignment apparatus for performing alignment. The platelike workpiece includes a plurality of direction indicating marks formed at given intervals so as to surround the alignment mark. Each of the direction indicating marks is pointed toward the alignment mark. The space of the direction indicating marks is set so that at least two of the plural direction indicating marks fall in the visual field of the imaging unit in viewing the platelike workpiece from the imaging unit. | 10-09-2014 |
20140299586 | LASER MACHINING APPARATUS - A laser machining apparatus that includes an interferometric height position detection unit, a condensing point position adjustment unit, and a confocal optical height position detection unit. A controller of the laser machining apparatus specifies, as a correction value, the difference between the two height positions of the upper face of the workpiece, one detected by the confocal optical height position detection unit and the other detected by the interferometric height position detection unit. The controller controls the condensing point position adjustment unit based on the height position obtained by correcting the height position of the upper face of the workpiece detected by the interferometric height position detection unit using the correction value. | 10-09-2014 |
20140298969 | CUTTING APPARATUS - Cutting apparatus includes first and second cutting units that are provided on one outside surface of a guide rail unit and are movable on first Y-axis guide rails and third and fourth cutting units that are provided on the other side surface and are movable on second Y-axis guide rails. A first spindle of the first cutting unit and a second spindle of the second cutting unit are disposed in a hung state with cutting blades opposed to each other and a third spindle of the third cutting unit and a fourth spindle of the fourth cutting unit are disposed in a hung state with cutting blades opposed to each other. The first and third spindles are so configured as to be movable in juxtaposition in the X-axis direction and the second and fourth spindles are so configured as to be movable in juxtaposition in the X-axis direction. | 10-09-2014 |
20140298968 | DISK-SHAPED WORKPIECE DIVIDING METHOD - A dividing method for a disk-shaped workpiece having a plurality of first division lines and a plurality of second division lines intersecting the first division lines. The workpiece is cut along the first and second division lines by using a cutting blade in a down cut manner as supplying a cutting fluid to the cutting blade, wherein the workpiece is fully cut in a thickness direction thereof to obtain a plurality of chips. The dividing method includes a first cutting step of cutting the workpiece along the first division lines and a second cutting step of cutting the workpiece along the second division lines. In at least the second cutting step, the outer circumference of the workpiece at the cut end of each second division line is not cut to form an uncut region, thereby suppressing the formation of waste chips. | 10-09-2014 |
20140295645 | SAPPHIRE SUBSTRATE FLATTENING METHOD - A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface in the condition where a first surface of the sapphire substrate is in contact with the holding surface of the stage through a liquid resin, a resin curing step of curing the liquid resin, a first grinding step of grinding a second surface of the sapphire substrate opposite to the first surface, a resin removing step of removing the liquid resin cured on the first surface of the sapphire substrate, and a second grinding step of grinding the first surface of the sapphire substrate. | 10-02-2014 |
20140295643 | WAFER PROCESSING METHOD - In a wafer processing method, a modified layer is formed inside a wafer along planned dividing lines by irradiating the wafer with a laser beam with such a wavelength as to be transmitted through the wafer from the back surface side of the wafer along the dividing lines. A first modified layer is formed near the back surface of the wafer by irradiating the wafer with the light focal point of the laser beam positioned near the back surface of the wafer. The wafer is then irradiated with the light focal point of the laser beam positioned on the front surface side. Then plural second modified layers are formed in a multi-layering manner with sequential movement of the light focal point toward an area leading to the first modified layer. The wafer is divided into individual devices along the dividing lines by applying an external force to the wafer. | 10-02-2014 |
20140256150 | WAFER PROCESSING METHOD - A wafer processing method for forming a via hole in a wafer. The wafer processing method includes a filament forming step of applying a pulsed laser beam to the wafer, the pulsed laser beam having a transmission wavelength to the wafer, in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area where the via hole is to be formed, thereby forming an amorphous filament inside the wafer in the subject area, and an etching step of etching the amorphous filament formed inside the wafer by using an etching agent to thereby form the via hole inside the wafer. | 09-11-2014 |
20140252392 | LIGHT EMITTING DIODE - An embodiment of the present invention provides a light emitting diode including a chip having a light emitting layer on the front surface side and a translucent member that is bonded between a back surface of the chip and a lead frame to support the chip by a resin having translucency, and is transmissive to light emitted from the light emitting layer. According to this configuration, the light emitting diode includes the translucent member that is transmissive to light emitted from the light emitting layer on the back surface side of the chip having the light emitting layer. Therefore, the ratio of light reflected at the interface with the lead frame to return to the light emitting layer can be suppressed to a low ratio and the light extraction efficiency can be enhanced. | 09-11-2014 |
20140248757 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer along a plurality of division lines to obtain a plurality of individual chips. The wafer processing method includes a filament forming step of applying a pulsed laser beam having a transmission wavelength to the wafer along each division line in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area to be divided, thereby forming a plurality of amorphous filaments inside the wafer along each division line, and an etching step of etching the amorphous filaments formed inside the wafer along each division line by using an etching agent to thereby divide the wafer into the individual chips along the division lines. | 09-04-2014 |
20140231305 | CASSETTE ASSEMBLY - A cassette assembly for storing a plurality of platelike workpieces. The cassette assembly includes a first cassette, a second cassette stacked on the first cassette, and a fixing unit for fixing the first cassette and the second cassette to each other in the stacked condition. Both of the cassettes include a first side plate having workpiece supporting grooves, and a second side plate arranged parallel to the first side plate. The second side plate has workpiece supporting grooves respectively opposed to the workpiece supporting grooves of the first side plate, a top plate for connecting the upper ends of the first and second side plates, a bottom plate for connecting the lower ends of the first and second side plates, and a load/unload opening formed near the front ends of the first and second side plates, the top plate, and the bottom plate for loading and unloading the workpieces. | 08-21-2014 |
20140217458 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT - Provided are a method of manufacturing a light-emitting element by which a light-emitting element ( | 08-07-2014 |
20140213040 | LASER PROCESSING METHOD - A laser processing method for performing laser processing to a workpiece. The laser processing method includes: a filament forming step of applying a first pulsed laser beam having a transmission wavelength to the workpiece to thereby form a filament as an optical transmission line in the workpiece so that the filament extends from the surface of the workpiece to be irradiated with the first pulsed laser beam to the inside of the workpiece, the filament having a refractive index higher than that of the workpiece; and a laser processing step of applying a second pulsed laser beam to the filament after performing the filament forming step to thereby transmit the second pulsed laser beam along the filament, thereby processing the workpiece with the second pulsed laser beam. | 07-31-2014 |
20140209240 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus for processing a workpiece under vacuum. The vacuum processing apparatus includes a housing having a first vacuum chamber for processing the workpiece and a second vacuum chamber partitioned from the first vacuum chamber by a partition wall and communicating with the first vacuum chamber through a communication opening formed in the partition wall, a shutter for closing the communication opening of the partition wall, a gate for closing a workpiece load/unload opening communicating with the second vacuum chamber, a workpiece holding unit provided in the first vacuum chamber for holding the workpiece, a processing unit for processing the workpiece held by the workpiece holding unit, a first evacuating unit for evacuating the first vacuum chamber, and a second evacuating unit for evacuating the second vacuum chamber. | 07-31-2014 |
20140206177 | WAFER PROCESSING METHOD - A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the substrate, the individual devices being formed from the functional layer and partitioned by the streets. In a functional layer dividing step, a laser beam is applied along both sides of each street to form two parallel grooves. Each groove reaches the substrate, thereby dividing the functional layer. In a division groove forming step, a division groove is formed in the functional layer and the substrate along each street so that the division groove extends between the two grooves. The wavelength of the laser beam in the functional layer dividing step is 300 nm or less, at an absorption wavelength of a passivation film. | 07-24-2014 |
20140196855 | SEPARATING APPARATUS - A separating apparatus for separating a composite substrate into a first substrate and a second substrate previously bonded to each other. The separating apparatus includes a support base having a supporting surface for supporting the composite substrate, a pair of side surface supporting rollers for supporting the peripheral side surface of the composite substrate placed on the supporting surface, and a separating unit for applying a separating force to the boundary between the first substrate and the second substrate constituting the composite substrate supported to the supporting surface of the support base and the side surface supporting rollers, thereby separating the composite substrate into the first substrate and the second substrate. | 07-17-2014 |
20140183163 | METHOD FOR PROCESSING PLATE OBJECT - In a method for processing a plate object, etching is performed for a flat plate object by a predetermined etching method and the shape of the plate object after the etching is grasped in advance. In a grinding step, the plate object is ground into a grinding-finished shape that is a non-flat shape obtained by inverting the shape of the plate object after the etching to the reverse shape. When subsequent etching by the predetermined etching method is performed for a grinding-target surface, the plate object is formed into a flat shape with a uniform thickness. | 07-03-2014 |
20140175070 | LASER PROCESSING METHOD AND FINE PARTICLE LAYER FORMING AGENT - A laser processing method including the steps of covering the back side of a workpiece with fine particles having absorptivity to the wavelength of a laser beam to be applied to the workpiece, thereby forming a fine particle layer on the back side of the workpiece, and next applying the laser beam through the fine particle layer to the back side of the workpiece to thereby perform ablation to the workpiece. The laser beam applied to the workpiece is absorbed by the fine particle layer to thereby suppress the scattering of the energy of the laser beam and the reflection of the laser beam, so that the ablation to the workpiece can be efficiently performed. | 06-26-2014 |
20140166736 | CARDBOARD BOX - A cardboard box includes: two pairs of opposed side walls; a bottom wall closing a region defined by the lower ends of the two pairs of side walls; and a lid covering an upper opening defined by the upper ends of the two pairs of side walls. At least one of the side walls can be opened and closed. | 06-19-2014 |
20140151879 | STRESS-RESILIENT CHIP STRUCTURE AND DICING PROCESS - A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes. | 06-05-2014 |
20140141596 | WAFER PROCESSING METHOD - A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the front side of the substrate. The individual devices are formed from the functional layer and are partitioned by the streets. A laser beam is applied along the streets from the front side of the functional layer to thereby remove the functional layer along the streets. A resist film is formed on the front side of the functional layer except on each street. The substrate of the wafer is plasma-etched along each street where the functional layer is absent to the depth corresponding to the finished thickness of each device, thereby forming a division groove along each street and also etching off a modified layer formed on the opposite sides of each street. | 05-22-2014 |
20140134761 | METHOD OF ATTACHING WAFER TO SHEET - A wafer attaching method of attaching a wafer having a warp to a sheet includes a wafer warp detecting step of detecting a surface shape of the wafer, a wafer positioning step of applying a photocuring liquid resin to the sheet and positioning the wafer so that a predetermined surface of the wafer corresponding to attaching conditions preset in a resin bonding apparatus is opposed to the sheet and the liquid resin according to the preset attaching conditions and the surface shape detected above, and a wafer attaching step of pressing the wafer against the liquid resin to thereby spread the liquid resin over the entire area where the wafer and the sheet are superimposed, next removing the pressure applied to the wafer, and next applying light to the liquid resin to cure the liquid resin, thereby attaching the predetermined surface of the wafer to the sheet. | 05-15-2014 |
20140127884 | WAFER PROCESSING METHOD - In a wafer processing method, grooves are formed on the front side of a wafer along all division lines extending in a first direction and along all division lines extending in a second direction perpendicular to the first direction. Each groove has a depth corresponding to a finished thickness of each device in the wafer. The wafer is cut into four sectorial wafer quarters. A protective member is provided on the front side of each wafer quarter; and the back side of the wafer quarter is ground to reduce the thickness of the wafer quarter to the finished thickness until the grooves are exposed to the back side of the wafer quarter, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140127883 | WAFER PROCESSING METHOD - In a wafer processing method, a wafer is cut along a division line extending in a first direction through the center of the wafer and along a division line extending in a second direction through the center of the wafer, thereby generating four sectorial wafer quarters. Grooves are formed on the front side of each wafer quarter along other division lines extending in a grid, each groove having a depth corresponding to a finished thickness of each device formed on the wafer quarter. A protective member is provided on the front side of each wafer quarter; and the wafer quarter is held through the protective member on a chuck table. The back side is then ground to reduce the thickness of the wafer quarter until the grooves are exposed to the back side of the wafer quarter, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140127882 | WAFER PROCESSING METHOD - A wafer processing method includes: a protective member providing step of providing a protective member on the front side of a wafer; a wafer quarter generating step of cutting the wafer along the division line extending in a first direction through the center of the wafer and along the division line extending in a second direction perpendicular to the first direction through the center of the wafer, thereby generating four sectorial wafer quarters; a back grinding step of grinding the back side of each wafer quarter to reduce the thickness of the wafer quarter; a frame providing step of supporting the wafer quarter through an adhesive tape to an annular frame; and a wafer quarter dividing step of fully cutting the wafer quarter along all of the division lines extending in the first and second directions, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140106545 | LASER PROCESSING METHOD FOR WORKPIECE - During the performance of a laser processing step of applying a laser beam to a wafer to form modified layers inside the wafer respectively along division lines, a predetermined one of the modified layers already formed is imaged by a camera from the back side of the wafer with predetermined timing, and a positional deviation of the predetermined modified layer from the corresponding division line is detected to calculate a correction value. Then, the correction value is added to data on applied position of the laser beam to thereby make the applied position of the laser beam coincide with each division line. Accordingly, a positional deviation of the modified layer to be formed after this correction from each division line can be suppressed. | 04-17-2014 |
20140106543 | LASER PROCESSING METHOD FOR WAFER - A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The wafer has a substrate, a functional layer formed on the front side of the substrate, and a film formed on the back side of the substrate. The method includes a modified layer forming step of applying a laser beam having a wavelength transmitting through the substrate and the functional layer and reflecting on the film along the division lines from the side of the functional layer. The laser beam is first focused at a virtual point set outside the substrate beyond the film and is reflected on the film to focus the beam inside the substrate, thereby forming a modified layer inside the substrate along each division line. | 04-17-2014 |
20140094019 | WAFER PROCESSING METHOD - A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer. | 04-03-2014 |
20140091537 | CHUCK TABLE - A chuck table holds a workpiece having a warp. The chuck table includes a suction holding member having a suction holding surface for holding the workpiece under suction, and an annular seal member provided around the outer circumference of the suction holding member for supporting a peripheral portion of the workpiece. The annular seal member is formed from an elastic member. The upper surface of the annular seal member is set higher in level than the suction holding surface according to the warp of the workpiece. In holding the workpiece on the chuck table under suction, vacuum leaking from the gap between the workpiece and the suction holding surface due to the warp of the workpiece is applied to the space defined by the workpiece and the annular seal member, thereby elastically deforming the annular seal member to flatten the upper surface of the workpiece. | 04-03-2014 |
20140084423 | PROTECTIVE MEMBER AND WAFER PROCESSING METHOD - A wafer processing method including a fixing step of providing a wafer on a protective member so that a device area of the wafer faces an unevenness absorbing member provided in a recess of the protective member and providing an adhesive outside the device area to thereby fix the protective member and the wafer, a grinding step of holding the protective member on a holding table in the condition where the back side of the wafer is exposed and next grinding the back side of the wafer by using a grinding unit to thereby reduce the thickness of the wafer to a predetermined thickness, and a removing step of removing the protective member from the wafer. The adhesive is locally provided outside of the device area, so that the protective member can be easily removed from the wafer without leaving the adhesive on the front side of each device. | 03-27-2014 |
20140080289 | METHOD OF FORMING GETTERING LAYER - Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer. | 03-20-2014 |
20140073067 | WAFER PROCESSING METHOD - A wafer processing method divides a wafer along a plurality of crossing streets formed on the front side of the wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The method includes a division groove forming step of cutting the back side of the wafer along each street by using a cutting blade to thereby form a division groove along each street with a predetermined thickness left between the bottom of the division groove and the front side of the wafer, a wafer supporting step of attaching the back side of the wafer to a dicing tape supported by an annular frame, and a wafer dividing step of applying an external force to the wafer attached to the dicing tape to thereby divide the wafer into the individual devices along the streets where the division grooves are respectively formed. | 03-13-2014 |
20140050552 | INLINE SYSTEM - An inline system including a first apparatus having a first processing unit for processing a workpiece and an unloading area for unloading the workpiece processed by the first processing unit, a second apparatus having a loading area for loading the workpiece unloaded from the unloading area and a second processing unit for processing the workpiece loaded to the loading area, a transfer unit for transferring the workpiece from the unloading area to the loading area, and a position detecting unit for imaging the unloading area to detect the position of the unloading area and also imaging the loading area to detect the position of the loading area. The transfer unit transfers the workpiece from the unloading area to the loading area according to the position of the unloading area and the position of the loading area detected by the position detecting unit. | 02-20-2014 |
20140048519 | LASER PROCESSING APPARATUS - A laser processing apparatus including a processing head for applying a laser beam to a workpiece. The processing head includes a focusing lens and a collecting unit provided between the focusing lens and the workpiece for collecting debris generated by the application of the laser beam focused by the focusing lens to the workpiece. The collecting unit includes a suction source for sucking the debris and a suction line having one end connected to the suction source and the other end opening to the front side of the workpiece. The laser processing apparatus further includes a cleaning liquid supplying unit for supplying a cleaning liquid to the suction line. | 02-20-2014 |
20140034624 | LASER PROCESSING APPARATUS - A laser processing apparatus has an optical transmitting unit for guiding a laser beam to a focusing unit. The optical transmitting unit includes a focusing lens for focusing the laser beam, an optical fiber unit for inputting the focused laser beam and guiding it to the focusing unit. The optical fiber unit includes an LMA fiber for inputting the focused laser beam. The LMA fiber has a large-diameter core covered with a cladding, a transmitting fiber provided by an SM fiber or a PM fiber. The transmitting fiber has a small-diameter core covered with a cladding, the small-diameter core having a diameter corresponding to the wavelength of the laser beam oscillated by the laser oscillator. A connector connects the LMA fiber and the transmitting fiber so that these fibers are axially aligned with each other. | 02-06-2014 |
20140030850 | PACKAGE SUBSTRATE PROCESSING METHOD - A package substrate processing method of dividing a package substrate into a plurality of individual package devices along a plurality of division lines, the package substrate being composed of an electrode plate and a synthetic resin layer formed on the back side of the electrode plate for molding the package devices. The package substrate processing method includes an internal stress relieving step of cutting the electrode plate of the package substrate along a selected one of the division lines to form a relief groove, thereby relieving an internal stress in the package substrate, a resin layer planarizing step of grinding the synthetic resin layer of the package substrate to thereby planarize the synthetic resin layer, and a package substrate dividing step of dividing the package substrate held on a holding table under suction along the division lines. | 01-30-2014 |
20130319985 | LASER MACHINING APPARATUS - A laser machining apparatus includes a chuck table for holding a workpiece, and an irradiation unit which irradiates a laser beam upon the workpiece held on the chuck table. The laser beam irradiation unit includes a condenser which condenses the laser beam and irradiates the condensed laser beam upon the workpiece held on the chuck table. The condenser includes first and second condenser lenses arrayed in series in an advancing direction of the laser beam, a first moving unit having a first driving source for moving the first condenser lens in a first direction perpendicular to an optical axis of the first condenser lens, and a second moving unit having a second driving source for moving the second condenser lens in a second direction perpendicular to the first direction. | 12-05-2013 |
20130309844 | LASER BEAM PROCESSING METHOD FOR WAFER - A laser beam processing method for a wafer includes a first processed groove forming step in which a laser beam is radiated along a planned dividing line so that the overlapping rate of condensed beam spots is equal to or less than 95%, to thereby form a first laser beam processed groove. The laser beam processing method for a wafer further includes a second processed groove forming step in which a laser beam is radiated along the first laser beam processed groove in such a manner that the overlapping rate of condensed beam spots is equal to or more than 97%, to thereby form a second laser beam processed groove at a bottom portion of the first laser beam processed groove. | 11-21-2013 |
20130306605 | MODIFIED LAYER FORMING METHOD - A modified layer forming method of applying a pulsed laser beam having a transmission wavelength to a workpiece through a predetermined beam entrance surface in the condition where the focal point of the pulsed laser beam is set inside the workpiece, thereby forming a desired modified layer inside the workpiece. The modified layer forming method includes the step of reducing the power of the pulsed laser beam to a power that cannot process the workpiece when a surface adjacent to the beam entrance surface of the workpiece is located at the beam entrance position of the pulsed laser beam. | 11-21-2013 |
20130306215 | ADHESIVE TAPE ATACHING METHOD - An adhesive tape attaching method including an aligning step of positioning the central portion of a wafer directly below the central portion of an adhesive tape, a partial attaching step of pressing the adhesive tape on the front side of the wafer by using an attaching roller positioned so as to cover the diameter of the adhesive tape passing through the central portion of the adhesive tape, thereby attaching a part of the adhesive tape to the wafer at a position where the central portion of the adhesive tape is superimposed on the central portion of the wafer, and an attaching step of rotationally moving the attaching roller from the central portion of the wafer to the radially opposite outer circumferential portions of the wafer after performing the partial attaching step, thereby attaching the adhesive tape to the wafer. | 11-21-2013 |
20130302969 | WAFER PROCESSING METHOD - A ring adhesive tape having an annular adhesive layer in a peripheral area thereof is attached to the front side of a wafer having a device area and a peripheral area surrounding the device area. The annular adhesive layer of the ring adhesive tape is positioned so as to correspond to the peripheral marginal area of the wafer, so that the annular adhesive layer does not adhere to the device area. In peeling the ring adhesive tape from the front side of the wafer after forming modified layers inside the wafer, it is possible to prevent damage to the device area due to the adhesive force of the annular adhesive layer. | 11-14-2013 |
20130300045 | HOLDING TABLE - A holding table for holding a platelike workpiece which includes a base and an annular holding member attached to the base. The annular holding member has an annular holding surface for holding the outer circumferential portion of the platelike workpiece thereon. Accordingly, a central recess is defined by the base and the annular holding member so as to be surrounded by the annular holding member. The annular holding member is formed with a suction opening exposed to the annular holding surface, a vacuum line having one end communicating with the suction opening and the other end connected to a vacuum source, a discharge opening exposed to the annular holding surface at a position radially outside of the suction opening, and a fluid line having one end communicating with the discharge opening and the other end connected to a fluid source. | 11-14-2013 |
20130299576 | INFORMATION EXCHANGING METHOD USING TWO-DIMENSIONAL CODE - An information exchanging method using a two-dimensional code and a two-dimensional code reader. An original sheet is prepared by writing a first two-dimensional code and a second two-dimensional code. The first two-dimensional code is readable by the code reader, whereas the second two-dimensional code is unreadable by the code reader. A monochrome copy sheet is prepared by monochromatically copying the original sheet, so that the monochrome copy sheet includes a third two-dimensional code as a monochrome copy of the first two-dimensional code and a fourth two-dimensional code as a monochrome copy of the second two-dimensional code. Accordingly, the third two-dimensional code is unreadable by the code reader, whereas the fourth two-dimensional code is readable by the code reader. Information exchange is performed by using the original sheet and the monochrome copy sheet. | 11-14-2013 |
20130298744 | WORKPIECE DIVIDING METHOD - A workpiece dividing method for dividing a platelike workpiece into a plurality of individual chips. The workpiece dividing method includes a workpiece preparing step of preparing the platelike workpiece, at least one side of the workpiece being formed as a mat surface, a holding step of holding the workpiece on a holding surface of a chuck table in the condition where the mat surface of the workpiece is exposed, a cut groove forming step of cutting the mat surface of the workpiece held on the holding surface of the chuck table by using a cutting blade to thereby form a cut groove with a remaining portion, and a laser cutting step of applying a laser beam to the workpiece along the cut groove to thereby cut the remaining portion. | 11-14-2013 |
20130260291 | MODIFIED MASK FOR PHOTOLITHOGRAPHY OF A WAFER WITH RECESS, METHOD FOR PRODUCING SUCH A MASK AND METHOD FOR PHOTOLITHOGRAPHY OF A WAFER WITH RECESS - A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section. | 10-03-2013 |
20130256279 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. The laser processed hole extends through the first member to the second member. The wavelength of plasma light generated by applying a pulsed laser beam to the first member and the second member is detected. Application of the laser beam is continued at a first power until the plasma light intensity generated from only the first member is decreased to reach a predetermined value. The laser beam is applied at a second power which is lower than the first power so as to not generate cracks in the first member when the plasma light intensity has reached the predetermined value. Application of the plasma laser beam stops when plasma light generated from the second member is detected. | 10-03-2013 |
20130249225 | ROBOT HAND - A robot hand having a suction holding unit on one face side holds a plate-shaped work by suction. An outer circumferential edge of the plate-shaped work is held, without contact with a surface of the plate-shaped work, by an outer circumference holding unit provided on the other face side. The robot hand can be used to hold the plate-shaped work yet to be worked by the suction holding unit, and to hold the plate-shaped work having been worked by the outer circumference holding unit. This prevents working debris from being deposited on the plate-shaped work yet to be worked and prevents defective working from occurring. In addition, since the plate-shaped work having been worked is held by the outer circumference holding unit, the robot hand does not make contact with surfaces of the worked plate-shaped work, and, accordingly, no contact marks are formed on the surfaces of the work. | 09-26-2013 |
20130240494 | LASER PROCESSING APPARATUS - A laser processing apparatus including a workpiece holding unit for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece held by the workpiece holding unit. The laser beam applying unit includes a laser oscillator for oscillating a laser beam, a focusing unit for focusing the laser beam oscillated by the laser oscillator onto the workpiece held by the workpiece holding unit, and an optical system provided between the laser oscillator and the focusing unit for transmitting the laser beam oscillated by the laser oscillator. The laser beam applying unit further includes a wavelength converting mechanism provided between the optical system and the focusing unit for converting the wavelength of the laser beam oscillated by the laser oscillator into a short wavelength. | 09-19-2013 |
20130230966 | PROCESSING METHOD FOR BUMP-INCLUDED DEVICE WAFER - A processing method for a bump-included device wafer which includes an adhesive providing step of providing an adhesive in an annular groove of a carrier wafer so that the adhesive projects from the upper surface of an annular projection of the carrier wafer; a wafer attaching step of attaching and fixing the front side of the device wafer through the adhesive to the front side of the carrier wafer so as to accommodate bumps in a recess of the carrier wafer after performing the adhesive providing step; and a thickness reducing step of grinding or polishing the back side of the device wafer to reduce the thickness of the device wafer to a predetermined thickness after performing the wafer attaching step. | 09-05-2013 |
20130213946 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method of applying a laser beam to a workpiece having a plurality of members, thereby forming a laser processed groove on the workpiece. The laser processing method includes the steps of setting a plurality of processing conditions respectively corresponding to a plurality of different materials forming the plurality of members constituting the workpiece, detecting the wavelengths of plasma lights generated by applying the laser beam to the plurality of members constituting the workpiece, selecting any suitable one of the processing conditions corresponding to any one of the members corresponding to the wavelength of plasma lights detected above, and applying the laser beam under the processing condition selected above. | 08-22-2013 |
20130206736 | LASER PROCESSING APPARATUS SUITABLE FOR FORMATION OF LASER PROCESSED HOLE - A laser processing apparatus detects the wavelength of plasma light generated by applying a pulsed laser beam to a workpiece. A plasma detecting unit includes a first bandpass filter for passing only the wavelength of plasma light separated into a first optical path by a beam splitter, a first photodetector for detecting the light passed through the first bandpass filter, a second bandpass filter for passing only the wavelength of plasma light separated into a second optical path by the beam splitter, and a second photodetector for detecting the light passed through the second bandpass filter. In performing laser processing, the pulsed laser beam is stopped when the light intensity detected by the first photodetector is decreased and the light intensity detected by the second photodetector is increased to a peak value and then decreased to a given value slightly less than the peak value. | 08-15-2013 |
20130203237 | CUTTING METHOD FOR DEVICE WAFER - A cutting method for cutting a device wafer along a plurality of crossing division lines by using a cutting blade, the division lines being formed on the front side of the device wafer to partition a plurality of regions where a plurality of devices are respectively formed. The cutting method includes a hydrophilic property providing step of applying a plasma to the front side of the device wafer to thereby make hydrophilic the front side of the device wafer, and a cutting step of cutting the device wafer along the division lines by using the cutting blade as supplying a cutting fluid to the device wafer after performing the hydrophilic property providing step. | 08-08-2013 |
20130193122 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a plasma detecting unit for detecting a wavelength of plasma light generated by applying a pulsed laser beam from a laser beam applying unit to a workpiece. The plasma detecting unit includes a bandpass filter for passing only the wavelength of plasma light generated from a first material and a photodetector for detecting the light passed through the bandpass filter. A light intensity signal is output to a controller. The controller controls the laser beam applying unit so that the amplitude of a light intensity is detected according to the light intensity signal output from the photodetector. The pulsed laser beam is stopped after the amplitude of the light intensity is decreased to a predetermined value and a predetermined number of shots of the pulsed laser beam has been applied. | 08-01-2013 |
20130189806 | PROCESSING METHOD FOR WAFER - A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer. | 07-25-2013 |
20130183890 | PROCESSING APPARATUS - A processing apparatus including a holding unit having a holding surface for holding a platelike workpiece and a processing unit for processing the workpiece held by the holding unit. The processing unit includes a processing wheel opposed to the holding surface of the holding unit, a wheel mount having a supporting surface for detachably supporting the processing wheel, a rotating shaft connected to another surface of the wheel mount opposite to the supporting surface, a housing for rotatably supporting the rotating shaft, a mount cover provided on the housing so as to cover the wheel mount with a predetermined gap defined between the mount cover and the wheel mount, the mount cover having a cleaning water inlet communicating with the predetermined gap, and a cleaning water source connected to the cleaning water inlet. | 07-18-2013 |
20130183811 | WAFER PROCESSING METHOD - A wafer processing method of dividing a wafer along streets. The wafer processing method includes a protective tape attaching step of attaching a protective tape to the front side of the wafer, a modified layer forming step of holding the wafer through the protective tape on a chuck table of a laser processing apparatus under suction and next applying a laser beam having a transmission wavelength to the wafer from the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and a wafer dividing step of canceling suction holding of the wafer by the chuck table and next applying an air pressure to the wafer now placed on the holding surface in the condition where horizontal movement of the wafer is limited, thereby dividing the wafer along each street where the modified layer is formed, thus obtaining individual devices. | 07-18-2013 |
20130164914 | LASER PROCESSING METHOD FOR WAFER - A wafer has a device area where a plurality of devices are formed, and a peripheral marginal area surrounding the device area. These devices are formed on the front side of the wafer so as to be partitioned by a plurality of division lines. A modified layer is formed by applying a laser beam along the division lines with the focal point of the laser beam set inside the wafer, thereby forming a modified layer as a division start point inside the wafer along each division line. The wafer is transported to a position where the next step is to be performed. In the modified layer forming step, the modified layer is not formed in the peripheral marginal area of the wafer to thereby form a reinforcing portion in the peripheral marginal area. Accordingly, breakage of the wafer from the modified layer in the transporting step can be prevented. | 06-27-2013 |
20130164864 | TOOL CUTTING METHOD FOR WORKPIECE HAVING A PLURALITY OF LED CHIPS SEALED BY SEALING MEMBER - A tool cutting method which includes a correlation table preparing step of preparing a correlation table indicating the correlation between the brightness of light emitted from LED chips and the thickness of a sealing member, a brightness measuring step of measuring the brightness of light emitted from the LED chips by applying a voltage to the LED chips, a calculating step of calculating the thickness of the sealing member corresponding to the desired thickness from the brightness measured in the brightness measuring step and the correlation table, and a cutting step of cutting the sealing member by using a tool cutting unit after performing the calculating step to reduce the thickness of the sealing member to a finished thickness providing the desired brightness of light emitted from the LED chips. | 06-27-2013 |
20130161797 | SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD - In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film. | 06-27-2013 |
20130161794 | INTERNALLY REFORMED SUBSTRATE FOR EPITAXIAL GROWTH, INTERNALLY REFORMED SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHODS THEREFOR - Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate. | 06-27-2013 |
20130149841 | WAFER DICING EMPLOYING EDGE REGION UNDERFILL REMOVAL - In one embodiment, a dielectric material layer embedding metal structures is ablated from the chip-containing substrate by laser grooving, which is performed on dicing channels of the chip-containing substrate. Subsequently, an underfill layer is formed over the dielectric material layer in a pattern that excludes the peripheral areas of the chip-containing substrate. The physically exposed dicing channels at the periphery can be employed to align a blade to dice the chip-containing substrate. In another embodiment, an underfill layer is formed prior to any laser grooving. Mechanical cutting of the underfill layer from above dicing channels is followed by laser ablation of the dicing channels and subsequent mechanical cutting to dice a chip-containing substrate. | 06-13-2013 |
20130143413 | WAFER PROCESSING METHOD - The back side of a wafer having a plurality of devices formed on the front side thereof is ground to thereby reduce the thickness of the wafer. A resin layer is formed on the front side of the wafer and is cured. The resin layer is planarized while the back side of the wafer is held on a chuck table and the resin layer formed on the front side of the wafer is exposed. The resin layer is bonded to a hard plate through a bonding member, and the back side of the wafer is ground by using a grinding unit of a grinding apparatus to thereby reduce the thickness of the wafer to a predetermined thickness while the hard plate bonded to the wafer is held on a chuck table of the grinding apparatus. | 06-06-2013 |
20130137203 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for processing an optical device wafer having an epitaxy substrate and an optical device layer formed on the front side of the epitaxy substrate through a buffer layer. The buffer layer of the optical device wafer is to be broken in the condition where the optical device layer of the optical device wafer is bonded through a bonding metal layer to a transfer substrate. The optical device wafer processing method includes a buffer layer breaking step of applying a pulsed laser beam having a wavelength having transmissivity to the epitaxy substrate and having absorptivity to the buffer layer from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer. The buffer layer breaking step includes a first laser beam applying step of completely breaking the buffer layer corresponding to an optical device area and a second laser beam applying step of incompletely breaking the buffer layer corresponding to a peripheral marginal area. | 05-30-2013 |
20130134142 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a beam diameter adjusting unit provided between a laser oscillator and a focusing unit, an imaging unit for detecting the beam diameter of the laser beam directed to a detection path, an optical path length changing unit for moving the imaging unit along the detection path to thereby change an optical path length, and a controller for controlling the imaging unit, the beam diameter adjusting unit, and the optical path length changing unit. The controller operates to move the imaging unit to two positions where different optical path lengths are provided, detect the beam diameters of the laser beam at the two positions, and controls the beam diameter adjusting unit according to the two beam diameters detected above so that the two beam diameters have a predetermined relation. | 05-30-2013 |
20130122619 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer is divided into individual optical devices along streets. A modified layer is formed by applying a laser beam to a sapphire substrate constituting the optical device wafer along the streets from the back side of the sapphire substrate such that the focal point of the laser beam is set inside the sapphire substrate, thereby forming a modified layer inside the sapphire substrate along each street. A reflective film is formed on the back side of the sapphire substrate and the reflective film is cut by applying a laser beam along the streets from the back side of the sapphire substrate. The wafer is divided by applying an external force to the optical device wafer to thereby break the optical device wafer along each street where the modified layer is formed, so that the optical device wafer is divided into the individual optical devices. | 05-16-2013 |
20130115861 | PROCESSING METHOD FOR WAFER HAVING CHAMFERED PORTION ALONG THE OUTER CIRCUMFERENCE THEREOF - A wafer processing method for reducing the thickness of a wafer to a predetermined thickness, the wafer having a chamfered portion along the outer circumference thereof. The wafer processing method includes a stacked wafer forming step of attaching a support substrate to the front side of the wafer to thereby form a stacked wafer, and a chamfered portion removing step of positioning a cutting blade having a rotation axis parallel to the stacking direction of the stacked wafer formed by the stacked wafer forming step so that the outer circumference of the cutting blade faces the chamfered portion of the wafer, and then making the cutting blade cut into the wafer from the outer circumference toward the center thereof to thereby partially remove the chamfered portion in the range corresponding to the predetermined thickness from the front side of the wafer. | 05-09-2013 |
20130115756 | PROCESSING METHOD FOR SEMICONDUCTOR WAFER HAVING PASSIVATION FILM ON THE FRONT SIDE THEREOF - A semiconductor wafer processing method forms a plurality of wafer dividing grooves respectively along a plurality of crossing streets formed on the front side of a semiconductor substrate of a semiconductor wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The semiconductor wafer has a passivation film formed on the front side of the semiconductor substrate so as to cover the devices and the streets. A first laser beam is applied to the passivation film along each street to thereby form a film dividing groove in the passivation film along each street. A second laser beam is applied to the semiconductor substrate along the film dividing groove formed in the passivation film, thereby forming the wafer dividing groove in the semiconductor substrate along each street. | 05-09-2013 |
20130087949 | ABLATION METHOD FOR DIE ATTACH FILM - An ablation method of applying a laser beam to a die attach film to perform ablation. The ablation method includes a protective film forming step of applying a liquid resin containing a fine powder of oxide having absorptivity to the wavelength of the laser beam to at least a subject area of the die attach film to be ablated, thereby forming a protective film containing the fine powder on at least the subject area of the die attach film, and a laser processing step of applying the laser beam to the subject area coated with the protective film, thereby performing ablation through the protective film to the subject area of the die attach film after performing the protective film forming step. | 04-11-2013 |
20130087948 | ABLATION METHOD FOR SUBSTRATE ON WHICH PASSIVATION FILM IS FORMED - An ablation method of applying a laser beam to a substrate on which a passivation film of nitride is formed, thereby performing ablation. The ablation method includes a protective film forming step of applying a liquid resin containing a fine powder of oxide having absorptivity to the wavelength of the laser beam to at least a subject area of the substrate to be ablated, thereby forming a protective film containing the fine powder on at least the subject area of the substrate, and a laser processing step of applying the laser beam to the subject area coated with the protective film, thereby performing ablation through the protective film to the subject area of the substrate after performing the protective film forming step. | 04-11-2013 |
20130087947 | ABLATION METHOD - An ablation method of applying a laser beam to a workpiece to perform ablation. The ablation method includes a protective film forming step of applying a liquid resin containing a powder having absorptivity to the wavelength of the laser beam to at least a subject area of the workpiece to be ablated, thereby forming a protective film containing the powder on at least the subject area of the workpiece, and a laser processing step of applying the laser beam to the subject area coated with the protective film, thereby performing ablation through the protective film to the subject area of the workpiece after performing the protective film forming step. | 04-11-2013 |
20130082358 | SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD - In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate ( | 04-04-2013 |
20130082038 | METHOD OF DETECTING CONDENSING SPOT POSITION IN LASER BEAM PROCESSING APPARATUS - A method of detecting a condensing spot position in a laser beam processing apparatus, including: a detection position setting step of setting a plurality of Z-axis directional positions in a range from a starting point to an ending point of detection positions into which the condenser is positioned; a laser beam processed groove forming step of sequentially positioning the condenser into the detection positions in the range from the starting point to the ending point, performing a predetermined interval indexing feeding by operating indexing feeding means each time the detection position for the condenser is changed, and forming a laser beam processed groove of a predetermined length in the plate-shaped body at each of the detection positions for the condenser; and a laser beam processed groove imaging step of imaging the laser beam processed grooves formed in the plate-shaped body by imaging means. | 04-04-2013 |
20130068740 | LASER PROCESSING APPARATUS - A pulsed laser beam is applied to a workpiece held on a chuck table by a laser beam applying unit. The laser beam applying unit includes a pulsed laser beam oscillator, a focusing lens, and a piezoelectric motor for displacing the focusing unit in a direction inclined at a predetermined angle (α) with respect to the Z direction. A controller controls the frequency and voltage of an RF current to be applied to the piezoelectric motor in relation to the repetition frequency of the pulsed laser beam to move the focusing unit in the X direction by Δx and in the Z direction by Δz in feeding the chuck table in the X direction, thereby displacing the focal point of the pulsed laser beam to be focused by the focusing lens in the thickness direction of the workpiece held on the chuck table. | 03-21-2013 |
20130062734 | CRYSTALLINE FILM, DEVICE, AND MANUFACTURING METHODS FOR CRYSTALLINE FILM AND DEVICE - Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 μm or more and 10 mm or less and reformed region pattern is formed in an internal portion of the crystalline film. | 03-14-2013 |
20130059428 | WAFER DIVIDING METHOD - A wafer is divided by setting the focal point of a laser beam inside the wafer at positions corresponding to division lines, thereby forming modified layers inside the wafer along the division lines. Each modified layer has a thickness ranging from the vicinity of the front side of the wafer to the vicinity of the back side of the wafer. An etching gas or an etching liquid is supplied to the wafer to erode the modified layers, thereby dividing the wafer into individual devices. The modified layers are not crushed, so fine particles are not generated in dividing the wafer. Accordingly, fine particles do not stick to the surface of each device and cause a reduction in quality. Further, since the modified layers are removed by etching, it is possible to prevent a reduction in die strength of each device due to the remainder of the modified layers. | 03-07-2013 |
20130056857 | DEVICE CHIP AND MANUFACTURING METHOD THEREFOR - A manufacturing method for a device chip having a substrate, a device formed on the front side of the substrate, and chip identification information marked inside the substrate includes preparing a device wafer having a base wafer and a plurality of devices formed on the front side of the base wafer so as to be partitioned by division lines, next applying a laser beam having a transmission wavelength to the device wafer from the back side thereof in the condition where the focal point of the laser beam is set inside the base wafer at the positions respectively corresponding to the devices, thereby forming a plurality of modified layer marks as the chip identification information inside the base wafer at the positions respectively corresponding to the devices, and finally dividing the device wafer along the division lines to obtain a plurality of device chips. | 03-07-2013 |
20130048617 | HOLE FORMING METHOD AND LASER PROCESSING APPARATUS - A hole forming method of forming a laser processed hole in a workpiece configured by bonding a first member formed of a first material and a second member formed of a second material. The hole forming method includes a minimum shot number setting step of setting as a minimum value the number of shots of a pulsed laser beam applied to the workpiece at the time the spectral wavelength of plasma has changed from the spectral wavelength inherent in the first material to the spectral wavelength inherent in the second material, and a maximum shot number setting step of setting as a maximum value the number of shots of the pulsed laser beam at the time the spectral wavelength of the plasma has completely changed. In a hole forming step, the application of the pulsed laser beam is stopped in the case that the number of shots has reached the minimum value and the spectral wavelength of the plasma has changed whereas the application of the pulsed laser beam is continued until the number of shots reaches the maximum value in the case that the spectral wavelength of the plasma has not changed even after the number of shots has reached the minimum value. | 02-28-2013 |
20130027690 | LASER BEAM SPOT SHAPE DETECTING METHOD - The spot shape of a laser beam is detected by moving a table holding a detection substrate having a luminescent substance in an X direction and a Y direction with a laser beam focused by a lens applied to an area of the detection substrate where the luminescent substance is located. The intensity of light emitted from the luminescent substance is detected during the movement of the table, and a light intensity map is prepared indicating the light intensities detected in the light intensity detecting step at all of the X and Y coordinates of the luminescent substance. Spot shape images of the laser beam are formed according to a plurality of light intensity maps obtained by positioning the focusing lens at a plurality of detection positions changed in a Z direction perpendicular to a holding surface of the table. | 01-31-2013 |
20130023107 | METHOD OF PROCESSING DEVICE WAFER - A method of processing a device wafer includes the carrier wafer preparing step of preparing a carrier wafer including an excessive carrier region on a surface thereof which is disposed in a position corresponding to an excessive outer circumferential region on a surface of the device wafer, the recess forming step of forming a recess in the excessive carrier region the carrier wafer, after the recess forming step, the adhesive placing step of placing an adhesive in the recess so as to project from the surface of the carrier wafer, after the adhesive placing step, the wafer bonding step of bonding the surface of the carrier wafer and the surface of the device wafer to each other, thereby securing the device wafer to the carrier wafer with the adhesive, and after the wafer bonding step, the thinning step of thinning the device wafer to a predetermined thickness by grinding or polishing a reverse side of the device wafer. | 01-24-2013 |
20130017640 | METHOD OF PROCESSING OPTICAL DEVICE WAFERAANM Morikazu; HiroshiAACI Ota-KuAACO JPAAGP Morikazu; Hiroshi Ota-Ku JPAANM Nishino; YokoAACI Ota-kuAACO JPAAGP Nishino; Yoko Ota-ku JP - A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm. | 01-17-2013 |
20130001207 | LASER BEAM APPLYING APPARATUS - A laser beam applying apparatus includes a laser beam oscillating unit, a focusing lens, and a diffractive optic element provided between the laser beam oscillating unit and the focusing lens for defining the spot shape of the laser beam oscillated by the laser beam oscillating unit. A zeroth-order light removing unit removes zeroth-order light emerging from the diffractive optic element and leaves first-order light whose spot shape has been defined by the diffractive optic element and the focusing lens. A first prism has an incident surface and an emergent surface inclined with respect to the incident surface. A second prism has a zeroth-order light reflecting surface for reflecting the zeroth-order light and a first-order light emerging surface from which the first-order light emerges. A damper absorbs the zeroth-order light reflected on the zeroth-order light reflecting surface of the second prism. | 01-03-2013 |
20120322231 | SEMICONDUCTOR WAFER PROCESSING METHOD - A semiconductor wafer has a device area where a plurality of semiconductor devices are respectively formed in a plurality of regions partitioned by a plurality of crossing division lines formed on the front side of the semiconductor wafer and a peripheral area surrounding the device area. The back side of the semiconductor wafer corresponding to the device area is ground to thereby form a circular recess and an annular projection surrounding the circular recess. In a chip stacked wafer forming step, a plurality of semiconductor device chips are provided on the bottom surface of the circular recess of the semiconductor wafer at the positions respectively corresponding to the semiconductor devices of the semiconductor wafer. The chip stacked wafer is ground to reduce the thickness of each semiconductor device chip to a finished thickness, and a through electrode is formed in each semiconductor device of the semiconductor wafer. | 12-20-2012 |
20120312793 | LASER PROCESSING APPARATUS - A laser processing apparatus including a pulsed laser oscillator for oscillating a pulsed laser beam, a focusing objective lens for focusing the pulsed laser beam, and a varifocal lens provided between the pulsed laser oscillator and the focusing objective lens. The varifocal lens has a piezoelectric device to change its focal length according to the period of radio-frequency waves produced by the piezoelectric device. A repetition frequency adjusting unit is connected to the pulsed laser oscillator, and a radio-frequency current frequency adjusting unit is connected to the piezoelectric device. The laser processing apparatus further includes a controller for controlling the repetition frequency adjusting unit and the radio-frequency current frequency adjusting unit so as to produce a phase difference between the repetition frequency of the pulsed laser beam and the frequency of the radio-frequency current to be applied to the piezoelectric device of the varifocal lens. | 12-13-2012 |
20120309169 | LASER PROCESSING METHOD FOR WAFER - A processing method for a wafer on which a plurality of devices are formed and partitioned by scheduled division lines includes a dividing groove by irradiating a laser beam of a wavelength to which the wafer has absorbency along the scheduled division lines to form dividing grooves which are to be used as start points of division. An external force divides the wafer into individual devices. The dividing grooves are formed by irradiating a laser beam of a first energy which is comparatively low upon a selected scheduled division line to form a first dividing groove which is to be used as a start point of division, and irradiating another laser beam of a second energy which is higher than the first energy upon scheduled division lines other than the selected scheduled division line to form second dividing grooves which are to be used as start points of division. | 12-06-2012 |
20120309168 | LASER BEAM PROCESSING METHOD FOR A WAFER - A processing method for a wafer which has, on a surface thereof, a device region in which a plurality of devices are formed and partitioned by division lines and an outer periphery excess region surrounding the device region, includes a dividing groove formation step of irradiating a laser beam of a wavelength having absorbability by a wafer along the division lines to form dividing grooves serving as start points of cutting, and a dividing step of applying external force to the wafer on which the dividing grooves are formed to cut the wafer into the individual devices. At the dividing groove formation step, the dividing grooves are formed along the division lines in the device region while a non-processed region is left in the outer periphery excess region on extension lines of the division lines. | 12-06-2012 |
20120298636 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a chuck table for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece. A laser beam oscillating unit oscillates a laser beam and a focusing unit focuses the laser beam onto the workpiece. A reflecting unit is provided on the optical axis of the focusing unit. A wavelength detecting unit detects the wavelength of the plasma light reflected by the reflecting unit, and a controller determines the material of the workpiece according to a detection signal from the wavelength detecting unit, to control the laser beam applying unit. | 11-29-2012 |
20120294690 | TOOL CUTTING APPARATUS AND TOOL CUTTING METHOD FOR WORKPIECE - A tool cutting apparatus includes a chuck table for holding a workpiece, and rotatable cutting means having a cutting tip for cutting the front side of the workpiece. Pure water and an additive are mixed to prepare a cutting fluid, and a cutting fluid nozzle supplies the cutting fluid to the cutting tip and the workpiece held on the chuck table. | 11-22-2012 |
20120292297 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method of applying a pulsed laser beam to a workpiece formed from a transparent member, thereby performing laser processing to the workpiece. The laser processing method includes a first laser processing step of applying a first pulsed laser beam to a subject area of the workpiece to roughen the subject area and a second laser processing step of applying a second pulsed laser beam to the subject area roughened by the application of the first pulsed laser beam immediately after performing the first laser processing step, thereby forming a recess in the subject area. The first laser processing step and the second laser processing step are repeated to thereby form a continuous groove in the subject area. | 11-22-2012 |
20120289060 | WAFER PROCESSING METHOD - In a wafer processing method, the back side of a wafer having a plurality of devices on the front side thereof is ground, thereby reducing the thickness of the wafer to a predetermined thickness. The back side of the wafer is polished after performing the back grinding step, thereby removing a grinding strain, and a silicon nitride film is formed on the back side of the wafer. The thickness of the silicon nitride film to be formed in the silicon nitride film forming step is set to 6 to 100 nm. Thus, the silicon nitride film having a thickness of 6 to 100 nm is formed on the polished back side of the wafer from which a grinding strain has been removed. Accordingly, each device constituting the wafer can ensure a sufficient die strength and a sufficient gettering effect. | 11-15-2012 |
20120289028 | WAFER DIVIDING METHOD - A wafer dividing method including a step of applying a laser beam to a wafer along division lines with the focal point of the laser beam set inside the wafer, thereby forming modified layers inside the wafer along the division lines; a step of attaching an adhesive tape to the wafer, the adhesive tape having a base sheet and an adhesive layer; a dividing step of applying an external force to the wafer by expanding the adhesive tape, thereby dividing the wafer along the division lines to obtain a plurality of device chips; and a debris catching step of heating the adhesive tape to thereby soften the adhesive layer such that it enters the space between any adjacent ones of the device chips obtained by the dividing step, thereby catching debris generated on the side surface of each device chip in the dividing step to the adhesive layer by adhesion. | 11-15-2012 |
20120289027 | DEVICE PROCESSING METHOD - In a device processing method, a laser beam is applied to a wafer along division lines from the back side of the wafer, thereby forming a division start point inside the wafer along the division lines at a depth not reaching the finished thickness of each device. A protective member is attached to the front side of the wafer before or after performing the division start points are formed. An external force is applied through the protective member to the wafer, thereby dividing the wafer along the division lines to obtain the individual devices. The back side of the wafer is ground to remove the modified layers, and a silicon nitride film is formed on at least the side surface of each device. The silicon nitride film has a gettering effect and is formed on the side surface of each device, which surface is formed by a cleavage plane. | 11-15-2012 |
20120289026 | SPLITTING METHOD FOR OPTICAL DEVICE WAFER - In a splitting method for an optical device wafer, the wafer having optical devices formed individually in regions partitioned by a plurality of crossing scheduled splitting lines provided on a front surface and having a reflective film formed on a reverse surface, a focal point of a laser beam is positioned to the inside of the optical device wafer and the laser beam is irradiated along the scheduled splitting lines from the reverse surface side of the wafer to form modification layers in the inside of the wafer. An external force is applied to the wafer to split the wafer along the scheduled splitting lines and form a plurality of optical device chips. The laser beam has a wavelength that produces transmittance through the reflective film equal to or higher than 80%. | 11-15-2012 |
20120286971 | SIGNAL SYSTEM - A signal system for operating a traffic signal includes a signal light, a control unit for controlling the operation of the signal light, and a power selecting mechanism for selecting the power to be supplied to the control unit between a commercial power supply and a battery mounted in a vehicle. The power selecting mechanism includes a battery route having a pair of connection terminals adapted to be connected to the battery of the vehicle, and an electromagnetic switch normally connecting the commercial power supply to the control unit. When the supply of commercial power is cut, the electromagnetic switch automatically performs switching so that the commercial power is disconnected from the control unit and the battery route is connected to the control unit. Further, the battery of the vehicle is connected to the connection terminals in the event of a power failure, thereby operating the traffic signal. | 11-15-2012 |
20120286573 | POWER MANAGING SYSTEM - A power managing system including a power plant and a plurality of electric vehicles each having a battery for storing the power generated by the power plant. The power stored in the battery of each electric vehicle is recovered to the power plant according to demand for power during the time when each electric vehicle is not in use. | 11-15-2012 |
20120252212 | PROCESSING METHOD FOR WAFER HAVING EMBEDDED ELECTRODES - A wafer processing method which includes a protective member attaching step of attaching a protective member to the front side of the wafer, a back grinding step of grinding the back side of the silicon (Si) substrate of the wafer so as not to expose electrodes to the back side of the silicon (Si) substrate, and an etching step of etching the back side of the silicon (Si) substrate by using an etching liquid to thereby expose the electrodes to the back side of the silicon (Si) substrate. The etching liquid includes a first etching liquid having a high etching rate to silicon (Si) and a second etching liquid capable of etching silicon (Si) and having a low etching rate to silicon dioxide (SiO | 10-04-2012 |
20120244682 | WAFER DIVIDING METHOD - In a wafer dividing method, a wafer is held by a chuck table of a laser beam processing apparatus. A modified layer is formed by radiating a laser beam having a wavelength that transmits the laser beam through the wafer, while adjusting the beam convergence point to a position inside of the wafer, so as to form a pair of modified layers the interval of which is greater than the width of a cutting edge of a cutting blade and smaller than the width of planned dividing lines, on the back side of the wafer at both sides of each of the planned dividing lines. The wafer is adhered to a dicing tape and divided into individual devices by cutting along the dividing lines. | 09-27-2012 |
20120244678 | SEMICONDUCTOR DEVICE WAFER BONDING METHOD - A semiconductor device wafer bonding method bonds a first semiconductor device wafer having a plurality of semiconductor devices with a plurality of projecting electrodes to a second semiconductor device wafer having a plurality of electrodes respectively corresponding to the projecting electrodes of the first semiconductor device wafer. An insulator is applied and fills the spacing between adjacent projecting electrodes. The first semiconductor device wafer is planarized to expose the end surfaces of the projecting electrodes, and the first semiconductor device wafer is bonded to the second semiconductor device wafer with an anisotropic conductor interposed between the projecting electrodes of the first semiconductor device wafer and the electrodes of the second semiconductor device wafer, to thereby respectively connect the electrodes through the anisotropic conductor. | 09-27-2012 |
20120244663 | SEMICONDUCTOR DEVICE CHIP MOUNTING METHOD - A semiconductor device chip has a plurality of projecting electrodes mounted on a wiring board or wafer having electrodes respectively corresponding to the projecting electrodes of the semiconductor device chip. An insulator is applied to the front side of the semiconductor device wafer where the projecting electrodes are formed, to fill any spaces between adjacent electrodes with the insulator. The front side of the wafer covered with the insulator is planarized to expose the end surfaces of the projecting electrodes, and the wafer is divided along division lines to obtain a plurality of individual semiconductor device chips. Each chip is mounted on the wiring board or the wafer with an anisotropic conductor interposed between the projecting electrodes of each chip and the electrodes of the wiring board or the wafer to thereby respectively connect the projecting electrodes and the electrodes through the anisotropic conductor. | 09-27-2012 |
20120234809 | LASER PROCESSING METHOD FOR NONLINEAR CRYSTAL SUBSTRATE - A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less. | 09-20-2012 |
20120199565 | LASER BEAM APPLYING MECHANISM AND LASER PROCESSING APPARATUS - A laser beam applying mechanism has a power adjusting unit provided between a laser beam oscillator and a focusing lens. The power adjusting unit includes a half-wave plate, a prism having a first polarization beam splitter film and a second polarization beam splitter film. The optical path is adjusted by a piezoelectric actuator opposed to the first polarization beam splitter film, and a polarized light components synthesizer opposed to the second polarization beam splitter film generates a phase difference (β) between an S polarized light component and a P polarized light component. The phase difference (β) between the S polarized light component and the P polarized light component of the laser beam obtained by the polarized light components synthesizer is in the range of 0° to 180°. | 08-09-2012 |
20120184084 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL. | 07-19-2012 |
20120156858 | OPTICAL DEVICE WAFER PROCESSING METHOD - A wafer processing method transfers an optical device layer (ODL) in an optical device wafer (ODW) to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer, and is partitioned by a plurality of crossing streets to define a plurality of regions where optical devices are formed. The transfer substrate is bonded to the front side of the ODL. The transfer substrate and the ODL cut along the streets. The transfer substrate is attached to a supporting member, and a laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the ODW and the transfer substrate. The focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate is then peeled off from the ODL. | 06-21-2012 |
20120156816 | SAPPHIRE WAFER DIVIDING METHOD - A sapphire wafer dividing method including a modified layer forming step of forming a plurality of modified layers inside a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, and a chamfering and dividing step of forming a plurality of cut grooves on the back side of the sapphire wafer along the division lines, thereby dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, wherein the corners of the back side of each light emitting device are chamfered by the formation of the cut grooves in the chamfering and dividing step. | 06-21-2012 |
20120137847 | CUTTING APPARATUS - A cutting apparatus including a chuck table for holding a workpiece, a cutting unit having a cutting blade for cutting the workpiece held on the chuck table, a cutting water supplying unit for supplying a cutting water to a work portion to be cut by the cutting blade, a pair of vibrating plates provided on the opposite sides of the cutting blade in such a manner that a spacing for forming a cutting water layer is defined between the upper surface of the workpiece held on the chuck table and the lower surface of each vibrating plate, and an ultrasonic vibrator for giving ultrasonic vibration to the vibrating plates. | 06-07-2012 |
20120111840 | LASER PROCESSING APPARATUS - A laser processing apparatus including a laser beam applying unit for applying a laser beam having a transmission wavelength to a workpiece held on a chuck table. The laser beam applying unit includes a laser beam oscillating unit for oscillating the laser beam, a focusing lens for focusing the laser beam oscillated by the laser beam oscillating unit, and a diffractive optic element interposed between the laser beam oscillating unit and the focusing lens. The laser beam oscillated by the laser beam oscillating unit is separated into a plurality of laser beams having different divergence angles by the diffractive optic element. The plurality of laser beams are next focused by the focusing lens to thereby form a plurality of focal points on the optical axis of the focusing lens. | 05-10-2012 |
20120103952 | LASER PROCESSING APPARATUS - An optical transmitting unit transmits a pulsed laser beam oscillated by a pulsed laser beam oscillator to a focusing unit in a laser processing apparatus. A wavelength band expanding unit expands the wavelength band of the pulsed laser beam, and a pulse width expanding unit increases the pulse width of the expanded pulsed laser beam. A focusing lens focuses the expanded pulsed laser beam. An optical fiber transmits the focused pulsed laser beam through a collimating lens and a pulse width compressing unit compresses the pulse width of the collimated pulsed laser beam to restore the original pulse width for transmission. | 05-03-2012 |
20120100696 | WORKPIECE DIVIDING METHOD - A workpiece has a substrate and a film formed on the front side of the substrate. A first laser beam applied to the film from the front side of the workpiece along streets formed on the film, thereby forming a plurality of laser processed grooves along the streets. An adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets, with the focal point of the second laser beam set inside the substrate, forming a plurality of modified layers along the streets. Thereafter, the adhesive tape is expanded to divide the substrate along the streets, thereby obtaining a plurality of individual devices. The back side of the substrate of each device is then ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness. | 04-26-2012 |
20120100694 | DIVIDING METHOD FOR WAFER HAVING DIE BONDING FILM ATTACHED TO THE BACK SIDE THEREOF - A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer is ground to a predetermined thickness. A laser beam is applied to the wafer from the back side of the wafer along the division lines with the focal point of the laser beam set inside the wafer at a position corresponding to each division line, thereby forming a plurality of modified layers inside the wafer along the division lines. The wafer is divided along the modified layers into the individual devices, and the back side of the wafer is ground to remove the modified layers and reduce the thickness of each device to the finished thickness. | 04-26-2012 |
20120088441 | PROCESSING APPARATUS HAVING FOUR PROCESSING UNITS - A processing apparatus including a turn table rotatably provided and having an opening; at least five chuck tables provided on the turn table, each chuck table having a holding surface for holding a workpiece; a support bed inserted through the opening of the turn table; four processing unit supporting mechanisms each including a first support column provided on the outside of the turn table, a second support column provided on the support bed, and a support member mounted to the first and second support columns; four processing units respectively supported to the four processing unit supporting mechanisms, the four processing units respectively corresponding to four ones of the at least five chuck tables; and four feeding units for respectively moving the four processing units in a direction perpendicular to the holding surfaces of the chuck tables. | 04-12-2012 |
20120088354 | WORKPIECE DIVIDING METHOD - In a semiconductor wafer with a supporting tape attached to the back side of the wafer, a coating member having a refractive index close to that of the supporting tape is formed on a pear-skin surface of the supporting tape to thereby planarize the pear-skin surface. Thereafter, a pulsed laser beam is applied from the upper side of the coating member to the semiconductor wafer in the condition where the focal point of the pulsed laser beam is set at a predetermined depth in the semiconductor wafer. Accordingly, the pulsed laser beam can be sufficiently focused inside the semiconductor wafer to thereby well form a modified layer inside the semiconductor wafer. | 04-12-2012 |
20120086797 | METHOD OF DETECTING PATTERN FORMED ON NON-EXPOSED SURFACE OF WORKPIECE - A method of detecting an object of detection formed in the inside of or on a non-exposed surface of a workpiece having a rugged exposed surface, the detection being made on the exposed surface side of the workpiece by use of an imaging unit. The detecting method includes: a flattening step of coating the exposed surface of the workpiece with a liquid resin transmissive to the wavelength of light to be detected by the imaging unit so as to flatten the exposed surface of the workpiece; and a detecting step of detecting the object of detection formed in the inside of or on the non-exposed surface of the workpiece by use of the imaging unit on the exposed surface side of the workpiece coated with the liquid resin, after the flattening step. | 04-12-2012 |
20120083059 | SAPPHIRE WAFER DIVIDING METHOD - A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, a modified layer forming step of forming a plurality of modified layers inside the sapphire wafer along the division lines, and a dividing step of dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, thereby chamfering the corners of the back side of each light emitting device owing to the formation of the cut grooves in the cut groove forming step. | 04-05-2012 |
20120080138 | METHOD OF PROCESSING PLATE-SHAPED BODY HAVING RUGGED SURFACE - A method of processing a plate-shaped body, for grinding or polishing the back side of a plate-shaped body having ruggedness on the face side thereof, includes: a coating step of coating the face side of the plate-shaped body with a water-soluble protective film; a protective tape adhering step of adhering a protective tape composed of a substrate and a paste layer to the face side of the plate-shaped body coated with the water-soluble protective film so as to bury the ruggedness in the paste layer; a processing step of holding the protective tape side of the plate-shaped body, with the protective tape adhered thereto, by a chuck table and grinding or polishing the back side of the plate-shaped body; and a removing step of peeling, after the processing step, the protective tape from the face side of the plate-shaped body and removing the water-soluble protective film. | 04-05-2012 |
20120064696 | WAFER MACHINING METHOD - A wafer provided on a face side thereof with a device region where devices are demarcated by planned dividing lines and with a peripheral surplus region surrounding the device region is divided into the individual devices. In performing the dividing process, the back side of the device region is ground to form an annular reinforcement part on the outer peripheral side thereof, a dicing tape is adhered to the back side of the wafer, the wafer is irradiated with a laser beam from the face side so as to divide the wafer into the devices and to form break starting points in the annular reinforcement part, and the dicing tape is expanded so as to disassembly the annular reinforcement part, with the break starting points as starting points, thereby separating the annular reinforcement part from the device region, and to widen the interval between the adjacent devices. Since the annular reinforcement part is remaining at the time of dividing the wafer into the individual devices, handleability during the dividing process is not spoiled. | 03-15-2012 |
20120061361 | METHOD OF DIVIDING WORKPIECE - A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region on through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices. | 03-15-2012 |
20120061010 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer has a device area where a plurality of optical devices are formed on the front side of a sapphire substrate, and a peripheral marginal area surrounding the device area. The device area projects from the peripheral marginal area. A break start point is formed on the front side of the sapphire substrate by applying a laser beam along the boundary between the device area and the peripheral marginal area. A protective member is attached to the front side of the optical device wafer. The optical device wafer is held on a chuck table of a grinding apparatus so that the protective member comes into contact with a holding surface of the chuck table. The back side of the sapphire substrate is ground to reduce the thickness thereof to a predetermined thickness. | 03-15-2012 |
20120056309 | SEMICONDUCTOR DEVICE WITH REDUCED HEAT-INDUCED LOSS - A semiconductor device which is capable of reducing a heat-induced loss includes a substrate and a circuit element disposed on the substrate. The substrate is of a rectangular shape with beveled surfaces on four corners thereof. | 03-08-2012 |
20120047047 | METHOD OF MANAGING PARTS - A method of managing a plurality of parts of an apparatus includes creating a part database of part information including at least the weights, part numbers, and shapes of individual parts, measuring the weight of a part to be ordered, entering the measured weight through input means of an information terminal and accessing the part database, extracting part information of all parts having weights which fall in a predetermined allowable range similar to the entered weight, from the part database, and displaying the extracted part information on display means of the information terminal, identifying the part number of the part to be ordered based on shapes of the parts represented by the displayed part information, and ordering the part with the identified part number. | 02-23-2012 |
20120018732 | INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME - Sapphire substrates are used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products. Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased. | 01-26-2012 |
20120018412 | OPTICAL DEVICE AND LASER BEAM MACHINING APPARATUS HAVING OPTICAL DEVICE - An optical device includes: a beam splitter by which a laser beam oscillated from an oscillator is branched into a first branch beam going ahead through transmission and a second branch beam going ahead through reflection; a first mirror by which the first branch beam going out of the beam splitter is reflected to go again toward the beam splitter; a second mirror by which the second branch beam going out of the beam splitter is reflected to go again toward the beam splitter; and a circular disk-like rotating unit for integrally rotating the first mirror and a second mirror, with a laser beam branch point in the beam splitter as a center of rotation. | 01-26-2012 |
20120003816 | WAFER DIVIDING METHOD - A method of dividing a wafer having devices formed in a plurality of regions demarcated by a plurality of streets formed in a grid pattern on a surface of the wafer, along the streets and into the individual devices. The wafer dividing method includes the steps of: forming grooves from the face side of the wafer along the streets and in a depth corresponding to the finished thickness of the devices; coating the surface of the wafer with an acrylic liquid resin curable by irradiation with UV rays to fill the grooves with the acrylic liquid resin and disposing a protective film on the acrylic liquid resin; performing irradiation with UV rays from the protective film side so as to cure the acrylic liquid resin; grinding the back side of the wafer so as to expose the grooves on the back side and divide the wafer into the individual devices; adhering the back side of the wafer to a surface of an adhesive tape adhered to an annular frame; and peeling the acrylic resin from the surface of the wafer together with the protective film. | 01-05-2012 |
20110294279 | WORKING METHOD FOR SAPPHIRE SUBSTRATE - A working method for a sapphire substrate for dividing a sapphire substrate along a set planned dividing line includes a cutting groove forming step of positioning a cutting blade, which includes a cutting edge to which diamond grain is secured by nickel plating, to a planned dividing line of the sapphire substrate and feeding the cutting blade and the sapphire substrate relative to each other for working while rotating the cutting blade to form a cutting groove, which serves as a start point of break, along the planned division line on the sapphire substrate, and a breaking step of applying external force to the sapphire substrate, for which the cutting groove forming step is carried out, to break the sapphire substrate along the planned dividing line along which the cutting groove is formed. The cutting groove forming step is set such that a rotational speed of the cutting blade is 20000 to 35000 rpm, a cutting-in depth of the cutting blade is 5 to 15 μm and a working feeding speed is 50 to 150 mm/second. | 12-01-2011 |
20110290769 | METHOD OF DIVIDING WORKPIECE USING LASER BEAM - A workpiece including an irregularly shaped portion on a dividing line is divided along the dividing line by detecting the location of the irregularly shaped portion, applying a detecting laser beam to an area of the workpiece except for the detected location, along the dividing line to detect the height of a surface of the workpiece except for the location, applying and focusing a machining laser beam having a wavelength which permeates the workpiece within the workpiece while moving a focused spot of the machining laser beam based on the detected height of the surface of the workpiece to form a modified layer in an area of the workpiece except for at least the location of the irregularly shaped portion along the dividing line, and applying an external force to the modified layer to divide the workpiece along the dividing line. | 12-01-2011 |
20110287609 | WAFER PROCESSING METHOD - A processing method for a wafer having a device area where a plurality of devices are formed on the front side of the wafer and a peripheral marginal area surrounding the device area. The processing method includes a reinforcing plate forming step of applying a heat-resistant bond to the front side of the wafer and solidifying the heat-resistant bond to thereby form a reinforcing plate from only the heat-resistant bond, a back grinding step of holding the reinforcing plate on a chuck table and grinding the back side of the wafer in the device area to thereby form a circular recess in the device area and leave an annular reinforcing portion in the peripheral marginal area, a through electrode forming step of forming a through electrode connected to an electrode of each device formed on the front side of the wafer, from the back side of the wafer fixed to the reinforcing plate, and a reinforcing plate removing step of supplying a solvent for dissolving the heat-resistant bond to the reinforcing plate, thereby removing the reinforcing plate. | 11-24-2011 |
20110281504 | GRINDING METHOD FOR WORKPIECE HAVING A PLURALITY OF BUMPS - A grinding method of grinding the back side of a workpiece having a projection on the front side thereof. The grinding method includes a holding jig preparing step of preparing a holding jig having a circular recess and an annular projection surround the circular recess, a setting step of setting the workpiece in the circular recess of the holding jig in the condition where the back side of the workpiece is exposed, a liquid curing agent supplying step of supplying a liquid curing agent into the circular recess before or after performing the setting step, a fixing step of curing the liquid curing agent in the condition where the workpiece is set in the circular recess and the liquid curing agent is present in the circular recess, thereby fixing the workpiece in the circular recess, and a grinding step of grinding the back side of the workpiece and the annular projection of the holding jig by using grinding means after performing the fixing step. | 11-17-2011 |
20110266266 | LASER PROCESSING MACHINE - A laser processing machine is provided which includes a chuck table adapted to hold a workpiece; and a laser beam irradiation unit for emitting a laser beam to the workpiece held by the chuck table. The laser beam irradiation unit includes a single laser beam oscillating unit for emitting a laser beam; a beam splitter which splits the laser beam emitted from the laser beam oscillating unit into a first laser beam propagating along a first path and a second laser beam propagating along a second path; a first condenser which condenses the first laser beam; and a second condenser which condenses the second laser beam. | 11-03-2011 |
20110261457 | OPTICAL DEVICE CONFIGURED BY BONDING FIRST AND SECOND TRANSPARENT MEMBERS HAVING BIREFRINGENT PROPERTY - An optical device obtained by bonding a first transparent member having a birefringent property to a second transparent member having a birefringent property. A dielectric multilayer film having no influence on the transmittance of light is formed on at least one of the bonding surfaces of the first and second transparent members. The bonding surface of the first transparent member is bonded through the dielectric multilayer film to the bonding surface of the second transparent member by optical contact. | 10-27-2011 |
20110256689 | OPTICAL DEVICE WAFER PROCESSING METHOD AND LASER PROCESSING APPARATUS - An optical device wafer processing method including a laser processed groove forming step of applying a laser beam for performing ablation to the front side or back side of a substrate of an optical device wafer along streets, thereby forming a laser processed groove as a break start point on the front side or back side of the substrate along each street, and a wafer dividing step of applying an external force to the optical device wafer after performing the laser processed groove forming step to thereby break the wafer along each laser processed groove, thereby dividing the wafer into individual optical devices. In performing the laser processed groove forming step, an etching gas atmosphere for etching a modified substance produced by applying the laser beam to the substrate is generated, whereby an etching gas in the etching gas atmosphere is converted into a plasma by the application of the laser beam to thereby etch away the modified substance. | 10-20-2011 |
20110256667 | STACKED WAFER MANUFACTURING METHOD - A manufacturing method for a stacked wafer configured by bonding a mother wafer having a plurality of first semiconductor device and a stacking wafer having a plurality of second semiconductor devices. The manufacturing method includes the steps of attaching a protective member to the front side of the stacking wafer to protect the second semiconductor devices, next grinding the back side of the stacking wafer, next bonding the front side of a reinforcing wafer through a bonding layer to the back side of the stacking wafer, next dividing the stacking wafer together with the reinforcing wafer into the plural second semiconductor devices, next bonding the front side of each second semiconductor device to the front side of the mother wafer to thereby connect the electrodes of each second semiconductor device to the electrodes of the corresponding first semiconductor device of the mother wafer, and finally grinding the reinforcing wafer bonded to the back side of each second semiconductor device to thereby remove the reinforcing wafer. | 10-20-2011 |
20110256665 | STACKED WAFER MANUFACTURING METHOD - A manufacturing method for a stacked wafer composed of a mother wafer and a stacking wafer bonded together. The mother wafer has a plurality of first semiconductor devices and the stacking wafer has a plurality of second semiconductor devices respectively corresponding to the first semiconductor devices. The manufacturing method includes the steps of bonding the front side of a substrate through a bonding layer to the front side of the stacking wafer, next grinding the back side of the stacking wafer to reduce the thickness of the stacking wafer to a predetermined thickness, next stacking the unit of the stacking wafer and the substrate bonded together on the mother wafer in the condition where the back side of the stacking wafer is opposed to the front side of the mother wafer, thereby bonding electrodes exposed to the back side of each second semiconductor device to electrodes of each first semiconductor device formed on the front side of the mother wafer, and finally grinding the substrate bonded to the front side of the stacking wafer to thereby remove the substrate. | 10-20-2011 |
20110244612 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the front side of the substrate. The individual optical devices are respectively formed in a plurality of regions partitioned by the streets. The optical device wafer processing method includes the steps of cutting the back side of the substrate along each street by using a cutting blade to thereby form a first cut groove as a first break start point on the back side of the substrate along each street, cutting the front side of the wafer along each street by using a cutting blade after forming the first cut groove to thereby form a second cut groove as a second break start point on the front side of the wafer along each street so that the second cut groove has a depth reaching the front side of the substrate, and applying an external force to the wafer after forming the second cut groove to thereby break the wafer along each street where the first and second cut grooves are formed, thereby dividing the wafer into the individual optical devices. | 10-06-2011 |
20110230000 | MEMS DEVICE MANUFACTURING METHOD - A MEMS device manufacturing method including a break start point forming step of forming a break start point in a substrate along the areas corresponding to a plurality of crossing streets set on the substrate before forming a plurality of MEMS devices on the substrate, a device forming step of forming the MEMS devices in a plurality of areas partitioned by the areas corresponding to the crossing streets on the front side of the substrate after performing the break start point forming step, and a substrate breaking step of applying an external force to the substrate after performing the device forming step to thereby break the substrate along the areas corresponding to the crossing streets where the break start point is formed, thus dividing the substrate into the individual MEMS devices. | 09-22-2011 |
20110226747 | WORKPIECE DIVIDING METHOD - A workpiece dividing method for dividing a workpiece having an uneven incident surface upon which a pulsed laser beam falls. The workpiece dividing method includes a coating step of applying a coating member to the incident surface of the workpiece, thereby planarizing the incident surface of the workpiece, the coating member transmitting the pulsed laser beam and having a refractive index close to that of the workpiece for the pulsed laser beam, a modified layer forming step of applying the pulsed laser beam to the workpiece from the side of the incident surface in the condition where a focal point of the pulsed laser beam is set inside the workpiece after performing the coating step, thereby forming a modified layer inside the workpiece, and a dividing step of applying an external force to the workpiece after performing the modified layer forming step, thereby dividing the workpiece as starting from the modified layer formed inside said workpiece as a break start point. | 09-22-2011 |
20110212574 | PROCESSING METHOD FOR PACKAGE SUBSTRATE - A processing method for a package substrate having a base substrate partitioned by a plurality of crossing division lines to form a plurality of chip forming areas where a plurality of semiconductor chips are respectively formed and molded with resin. The package substrate has a resin surface and an electrode surface opposite to the resin surface. The processing method includes a warp correcting step of cutting the package substrate from the resin surface or the electrode surface along the division lines by using a cutting blade to form a cut groove, thereby correcting a warp of the package substrate, and a grinding step of grinding the resin surface of the package substrate in the condition where the electrode surface of the package substrate is held on a holding table after performing the warp correcting step, thereby reducing the thickness of the package substrate to a predetermined thickness. | 09-01-2011 |
20110195537 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate along the division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the division lines, thereby forming a plurality of modified layers as division start points inside the substrate along the division lines; and a crack growing step of applying a CO | 08-11-2011 |
20110195536 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of crossing modified layers as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO | 08-11-2011 |
20110195535 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO | 08-11-2011 |
20110186554 | WAFER DIVIDING METHOD USING CO2 LASER - A wafer dividing method for dividing a wafer into individual devices along a plurality of division lines formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the division lines. The wafer dividing method includes a division inducing region forming step of applying a laser beam having a transmission wavelength to the wafer along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a plurality of modified layers as division inducing regions inside the wafer along the division lines; and a dividing step of applying a CO | 08-04-2011 |
20110159621 | MANUFACTURING METHOD FOR LIGHT EMITTING DEVICE - A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing laser processing for the sapphire substrate layer and next applying an external force to a processed locus formed along each division line by the above laser processing to thereby divide the light emitting device wafer into a plurality of light emitting devices. The sapphire layer of each light emitting device has side surfaces whose horizontal sectional shape is a corrugated shape. Accordingly, the number of total reflections on the side surfaces of the sapphire layer can be reduced to thereby achieve efficient emergence of light from the sapphire layer. | 06-30-2011 |
20110155791 | MANUFACTURING METHOD FOR COMPOSITE SUBSTRATE - A composite substrate manufacturing method including the steps of grinding a sapphire substrate to uniform the thickness of the sapphire substrate, next forming an optical device layer on the front side of the sapphire substrate, next bonding the front side of a heat sink substrate through a bonding metal layer to the front side of the optical device layer formed on the front side of the sapphire substrate to thereby form a composite substrate, next grinding the back side of the heat sink substrate of the composite substrate to uniform the thickness of the composite substrate, and finally grinding the back side of the sapphire substrate of the composite substrate to reduce the thickness of the sapphire substrate to a predetermined thickness. | 06-30-2011 |
20110147349 | WAFER DIVIDING APPARATUS AND LASER PROCESSING APPARATUS - A wafer dividing apparatus for dividing a wafer along a plurality of crossing streets in the condition where the wafer is attached to the upper surface of a dicing tape supported to an annular frame and the strength of the wafer is reduced along the streets. The wafer dividing apparatus includes a frame holding unit for holding the annular frame, a wafer holding table having a holding surface for holding the wafer through the dicing tape supported to the annular frame held by the frame holding unit, a tape expanding unit for relatively moving the frame holding unit and the wafer holding table in a direction perpendicular to the holding surface of the wafer holding table to thereby expand the dicing tape, and a vibration generating unit for applying vibration to the holding surface of the wafer holding table. | 06-23-2011 |
20110133235 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on one side surface of the sapphire layer and next transmitted through another side surface of the sapphire layer. | 06-09-2011 |
20110124181 | WORKPIECE CUTTING METHOD - A cutting method for cutting a workpiece by using a cutting blade. The cutting method includes the steps of attaching an adhesive sheet to one surface of the workpiece, holding the workpiece through the adhesive sheet on holding means, and feeding the cutting blade into the workpiece until reaching the adhesive sheet as supplying a cutting fluid having a temperature of 10° C. or less, thereby cutting the workpiece. | 05-26-2011 |
20110097875 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer into individual devices along a plurality of crossing streets formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the streets. The wafer processing method includes the steps of attaching the front side of the wafer to a dicing tape supported to an annular dicing frame, grinding the back side of the wafer to reduce the thickness of the wafer to a predetermined thickness, forming a break start point along each street from the back side of the wafer, applying an external force to the wafer to break the wafer along each street where the break start point is formed, thereby dividing the wafer into the individual devices, attaching the back side of the wafer to a front side of an adhesive tape supported to an annular frame and next removing the adhesive tape from the front side of the adhesive tape, and peeling off and picking up each device from the adhesive tape. | 04-28-2011 |
20110097852 | WAFER PROCESSING METHOD WITHOUT OCCURRENCE OF DAMAGE TO DEVICE AREA - A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the front surface of the wafer; holding a protection tape side of the wafer by a rotatable chuck table, positioning a cutting blade on a rear surface of the wafer, and rotating the chuck table to cut a boundary portion between the device area and the outer circumferential redundant area to form a separation groove; grinding only the rear surface of the wafer corresponding to the device area to form a circular recessed portion to leave the ring-like outer circumferential redundant area as a ring-like reinforcing portion, the wafer being such that the device area and the ring-like outer circumferential redundant area are united by the protection tape; and conveying the wafer supported by the ring-like reinforcing portion via the protection tape. | 04-28-2011 |
20110084050 | LASER PROCESSING APPARATUS - A laser processing apparatus including a laser applying unit. The laser applying unit includes a first laser oscillating unit, a second laser oscillating unit, a first laser branching unit for branching a laser beam oscillated from the first laser oscillating unit into three optical paths, a second laser branching unit for branching a laser beam oscillated from the second laser oscillating unit into three optical paths, three first focusing units for respectively focusing the laser beams through the three optical paths obtained by the first laser branching unit toward a glass substrate, and three second focusing units for respectively focusing the laser beams through the three optical paths obtained by the second laser branching unit. The first focusing units and the second focusing units are alternately arranged in a line in an indexing direction. | 04-14-2011 |
20110081768 | WORKPIECE DIVIDING METHOD - In a workpiece dividing method, an expansion tape is stuck to an adhesive film side of a workpiece in a state where an adhesive film is stuck to the rear surface of a wafer. Respective positions of the predetermined dividing lines on the front surface of the wafer are detected. On the basis of information on the detected predetermined dividing lines, a laser beam passing through the wafer from the front surface of the wafer is focused on and directed to the front surface or inside of the adhesive film to form modified areas on the front surface of or in the inside of the adhesive film. On the basis of information on the detected predetermined dividing lines, a laser beam passing through the wafer from the front surface of the wafer is focused on and directed to the inside of the wafer to form modified areas in the inside of the wafer. The expansion tape is expanded to divide the workpiece along the predetermined dividing lines with the modified areas taken as start points. | 04-07-2011 |
20110061691 | SEMICONDUCTOR WAFER TREATING APPARATUS - A semiconductor wafer treating apparatus comprising a housing, holding means rotatably disposed within the housing, rotating means for rotating the holding means, and cleaning means for cleaning a semiconductor wafer held on the holding means. Irradiation means for irradiating the semiconductor wafer held on the holding means with short wavelength ultraviolet radiation is further disposed in the semiconductor wafer treating apparatus. | 03-17-2011 |
20110059620 | PROTECTIVE FILM FORMING METHOD AND APPARATUS - A protective film forming method for forming a protective film of resin on the front side of a wafer to be laser-processed. The protective film forming method includes the steps of holding the wafer on a spinner table in the condition where the front side of the wafer is oriented upward, forming a water layer covering the front side of the wafer held on the spinner table, dropping a liquid resin onto the water layer at the center of the wafer, rotating the spinner table holding the wafer to scatter the water layer and radially spread the liquid resin dropped on the water layer, thereby forming a first resin film covering the front side of the wafer by a centrifugal force produced during rotation of the wafer, dropping the liquid resin onto the first resin film at the center of the wafer, and rotating the spinner table holding the wafer to radially spread the liquid resin dropped on the first resin film, thereby forming a second resin film covering the first resin film by a centrifugal force produced during rotation of the wafer. | 03-10-2011 |
20110056922 | LASER PROCESSING METHOD FOR WORKPIECE - A processing method for a workpiece which includes a first modified region forming step of forming first modified regions along first division lines and second division lines near the front side of the workpiece, a second modified region forming step of forming second modified regions at intersecting regions between the first division lines and the second division lines at predetermined positions between the back side of the workpiece and the first modified regions formed in the workpiece by performing the first modified region forming step, and a dividing step of applying an external force to the workpiece after performing the first and second modified region forming steps to thereby divide the workpiece along the first division lines and the second division lines into individual chips. | 03-10-2011 |
20110042362 | LASER BEAM PROCESSING MACHINE - A laser beam processing machine is provided which includes a laser beam irradiation unit including a laser beam oscillation unit and a processing head provided with a condenser lens condensing a laser beam oscillated from the laser beam oscillation unit. The processing head includes a liquid column forming mechanism provided with a jet nozzle adapted to jet liquid along an optical path for the laser beam condensed by the condenser lens, and a water droplet suction mechanism disposed below the liquid column forming mechanism and provided with an insertion passage through which a liquid column jetted from the jet nozzle is passed and with an annular suction port formed to surround the insertion passage and communicate with suction means. | 02-24-2011 |
20110042291 | WASTE FLUID TREATING APPARATUS - A waste fluid treating apparatus including a pure water generating unit including an ion exchanger for purifying a fresh water sent by a fresh water pump to obtain a pure water. The ion exchanger includes a housing, an anion exchange resin layer accommodated in the housing, and a mixed resin layer accommodated in the housing. The anion exchange resin layer is composed of only anion exchange resin, and the mixed resin layer is composed of a mixture of anion exchange resin and cation exchange resin. The housing is provided with a fresh water inlet for introducing the fresh water into the anion exchange resin layer and a pure water outlet for discharging the pure water from the mixed resin layer. | 02-24-2011 |
20110034007 | DIVIDING METHOD FOR PLATELIKE WORKPIECE - A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided. | 02-10-2011 |
20100317172 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus including a laser beam applying unit. The laser beam applying unit includes a laser beam generating unit, a focusing unit, and an optical system for guiding a laser beam from the laser beam generating unit to the focusing unit. The optical system includes a first polarization beam splitter for splitting the laser beam generated from the laser beam generating unit into a first laser beam and a second laser beam, a half-wave plate inserted between the laser beam generating unit and the first polarization beam splitter, a first mirror for reflecting the first laser beam transmitted through the first polarization beam splitter to an optical path parallel to the optical path of the second laser beam, a second mirror for reflecting the second laser beam in a direction perpendicular to the direction of incidence of the second laser beam, and a second polarization beam splitter located at a position where the first laser beam reflected by the first mirror intersects the second laser beam reflected by the second mirror. | 12-16-2010 |
20100311225 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer along each street, attaching the front side of the wafer to the front side of a rigid plate having a plurality of grooves by using an adhesive resin, applying ultraviolet radiation to the adhesive resin to thereby increase the holding force of the adhesive resin, grinding the back side of the wafer to expose the division grooves to the back side of the wafer, attaching an adhesive tape to the back side of the wafer, immersing the wafer and the rigid plate in hot water to swell the adhesive resin, thereby decreasing the holding force of the adhesive resin, and removing the rigid plate from the front side of the wafer. | 12-09-2010 |
20100304551 | PROTECTIVE FILM AGENT FOR LASER DICING AND WAFER PROCESSING METHOD USING THE PROTECTIVE FILM AGENT - A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions. | 12-02-2010 |
20100297855 | DEVICE PROCESSING METHOD - A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm | 11-25-2010 |
20100297831 | LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division line on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density per pulse of the pulsed laser beam is set less than or equal to an inflection point where the depth of the laser processed groove steeply increases with an increase in the peak energy density. | 11-25-2010 |
20100297830 | LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm | 11-25-2010 |
20100270273 | LASER BEAM PROCESSING MACHINE - A laser beam processing machine that includes a laser beam irradiation unit for directing a laser beam to a workpiece held by a chuck table; a water-containing cover including an annular lateral wall surrounding the workpiece held by the chuck table, a top wall formed of a transparent member and closing an upper surface of the annular lateral wall, a water-supply hole and a water-discharge hole; a water-containing cover positioning unit for selectively positioning the water-containing cover at a waiting position remote from the chuck table and at an operating position where the water-containing cover surrounds the workpiece held by the chuck table; and a water supply unit connected to the water-supply hole. | 10-28-2010 |
20100267219 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method including a protective plate attaching step of attaching a transparent protective plate through a double-sided adhesive tape to the front side of a sapphire substrate constituting an optical device wafer, the double-sided adhesive tape being composed of a sheet capable of blocking ultraviolet radiation and adhesive layers formed on both sides of the sheet, wherein the adhesive force of each adhesive layer can be reduced by applying ultraviolet radiation; a sapphire substrate grinding step of grinding the back side of the sapphire substrate; a modified layer forming step of applying a laser beam to the sapphire substrate from the back side thereof to thereby form a modified layer in the sapphire substrate along each street; a protective plate removing step of removing the protective plate in the condition where the double-sided adhesive tape is left on the sapphire substrate; and a wafer dividing step of breaking the sapphire substrate along each street where the modified layer is formed, thus dividing the optical device wafer into individual optical devices in the condition where the double-sided adhesive tape is left on the sapphire substrate. | 10-21-2010 |
20100261309 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device in which a second semiconductor chip is bonded to a surface of a first semiconductor chip. The method includes: a back side grinding step for grinding the back side of a wafer including a device area where a plurality of first semiconductor chips are formed, the grinding applied to an area corresponding to the device area, so as to reduce the thickness of the wafer in the device area to a predetermined finished thickness; a chip bonding step for bonding the second semiconductor chip to a predetermined position of the surface of each of the first semiconductor chips formed on the face-side surface of the wafer; and a wafer dividing step for dividing the wafer along streets to separate the device area of the wafer into individual semiconductor devices in each of which the second semiconductor chip is bonded to the surface of the first semiconductor chip. | 10-14-2010 |
20100142049 | POLARIZING DEVICE AND LASER UNIT - A polarizing device for converting a circularly polarized light beam into a radial polarized light beam, wherein the circularly polarized light beam is obtained by passing a linearly polarized light beam oscillated from a laser oscillator through a quarter-wave plate. The polarizing device includes an axicon lens having a conical surface and a dielectric film formed on the conical surface of the axicon lens. | 06-10-2010 |
20100133243 | LASER PROCESSING APPARATUS - A laser processing apparatus including a detecting unit. The detecting unit includes a white light source for emitting white light, a focusing lens for focusing the white light to the workpiece, a first optical fiber for guiding the white light emitted from the white light source to the focusing lens, a detector for detecting the intensity of reflected light from the workpiece, and a second optical fiber for guiding the reflected light to the detector. Accordingly, the white light to be focused to the workpiece can be easily handled and only a wavelength component focused on the workpiece can be stably propagated. | 06-03-2010 |
20100129546 | PROTECTIVE FILM FORMING METHOD AND APPARATUS - A protective film forming method for forming a protective film of resin on a work surface of a wafer. The protective film forming method includes a wafer holding step of holding the wafer on a spinner table in the condition where the work surface is oriented upward, a spray coating step of spraying first liquid resin onto the work surface of the wafer as rotating the spinner table at a first rotational speed after performing the wafer holding step, a liquid resin supplying step of dropping a predetermined amount of second liquid resin onto a central area of the work surface of the wafer as rotating the spinner table at a second rotational speed lower than the first rotational speed after performing the spray coating step, and a spin coating step of rotating the spinner table at a third rotational speed higher than the first rotational speed after performing the liquid resin supplying step to thereby spread the second liquid resin dropped onto the central area of the work surface of the wafer, thus forming the protective film on the work surface of the wafer. | 05-27-2010 |
20100099221 | STACKED DEVICE MANUFACTURING METHOD - A stacked device manufacturing method including a kerf forming step of forming a kerf on the front side of each of plural wafers along each street, the kerf having a depth corresponding to a predetermined finished thickness of each wafer, a first stacking step of stacking a first one of the wafers and a second one of the wafers in such a manner that the front side of the second wafer is opposed to the front side of the first wafer and that the electrodes of the second wafer are respectively bonded to the electrodes of the first wafer, a first back grinding step of grinding the back side of the second wafer to expose each kerf of the second wafer to the back side of the second wafer, a second stacking step of stacking a third one of the wafers to the second wafer in such a manner that the front side of the third wafer is opposed to the back side of the second wafer and that the electrodes of the third wafer are respectively bonded to the electrodes of the second wafer, and a second back grinding step of grinding the back side of the third wafer to expose each kerf of the third wafer to the back side of the third wafer. | 04-22-2010 |
20100087023 | LASER BEAM MACHINING METHOD AND LASER BEAM MACHINING APPARATUS - A laser beam machining method wherein machining areas in which to form machined grooves and machining start point areas in which to form shallow grooves shallower than the machined grooves are alternately set in each of streets formed on a wafer, and the machined grooves and the shallow grooves are continuously formed by scanning an irradiation point of a laser beam along each of the streets. | 04-08-2010 |
20100084386 | LASER PROCESSING MACHINE - A laser processing machine is provided in which a flat plate-like mask is disposed between a mirror and a relay lens in an optical system so as to be perpendicular to the optical path of a laser beam. The mask is horizontally shiftable. The laser beam is allowed to pass through an elongate trapezoidal aperture formed in the mask to extend in the shifting direction. The sectional shape of a portion of the laser beam passing through the aperture of the wafer is focused on the wafer. Shifting the mask can adjust the width of an image of the laser beam focused on the wafer. | 04-08-2010 |
20100055877 | WAFER PROCESSING METHOD - Disclosed herein is a wafer processing method for dividing a wafer along a plurality of streets. The wafer processing method includes a back grinding step of grinding the back side of the wafer in an area corresponding to a device area to thereby reduce the thickness of the device area to a predetermined finished thickness and to simultaneously form an annular reinforcing portion on the back side of the wafer in an area corresponding to a peripheral marginal area, a wafer supporting step of attaching the back side of the wafer to a dicing tape, a kerf forming step of cutting the front side of the wafer along each street to thereby form a kerf having a depth corresponding to the thickness of the device area along each street, thereby dividing the device area into individual devices, and a peripheral marginal area removing step of peeling off the peripheral marginal area from the dicing tape. | 03-04-2010 |
20100047999 | WORKING METHOD FOR AN OPTICAL DEVICE WAFER - A dividing method for an optical device wafer includes a protective plate adhering step of releasably adhering the surface of an optical device wafer to the surface of a protective plate, a reverse face grinding step of grinding the reverse face of the optical device wafer, a dicing tape sticking step of sticking the reverse face of the optical device wafer on the surface of a dicing tape, a protective plate grinding step of grinding the reverse face of the protective plate adhered to the optical device wafer stuck on the dicing tape so as to have a predetermined thickness, a laser working step of irradiating a laser beam upon the protective plate along the streets formed on the optical device wafer to carry out laser working, which forms break starting points along the streets, for the protective plate, and a wafer dividing step of applying external force to the protective plate to break the protective plate along the break starting points to break the optical device wafer along the streets thereby to divide the optical device wafer into the individual optical devices. | 02-25-2010 |
20100044590 | LASER PROCESSING METHOD - A laser processing method for processing a wafer including a substrate layer and a device layer composed of a plurality of devices formed on the front side of the substrate layer, wherein a laser beam is applied to the wafer from the back side in a defocused condition where the focal position of the laser beam is spaced apart from the surface position of the substrate layer on the back side by a predetermined distance. | 02-25-2010 |
20100044359 | HEIGHT POSITION DETECTING APPARATUS AND HEIGHT POSITION DETECTING METHOD - A laser beam having an annular spot shape with which a workpiece is irradiated is reflected on an upper surface and a lower surface of the workpiece. The reflected light having the annular spot shape which is reflected on the lower surface of the workpiece is intercepted by a pinhole mask, whereas the reflected light having the annular spot shape which is reflected on the upper surface of the workpiece is permitted to pass through the pinhole mask, and the intensity of light received is detected based on the latter reflected light. Therefore, the height position of the upper surface of a workpiece can be detected even where the workpiece is transmissive to visible rays. In this case, with regard to the reflected light having the annular spot shape which is reflected on the upper surface of the workpiece, the intensity of the light after diffusion by a laser beam diffusing unit is detected by a photodetector having a detecting surface with a predetermined area. This makes it possible to assuredly and accurately detect the upper surface height position of the workpiece, even in the presence of scattering of the annular spot shape. | 02-25-2010 |
20100044358 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus including a holding unit for holding a workpiece, a processing unit for applying a laser beam to the workpiece held by the holding unit, a surface displacement detecting unit for detecting a surface displacement of the workpiece, and a focal position adjusting unit for adjusting the position of a focusing lens provided in the processing unit according to the surface displacement detected. The surface displacement detecting unit includes a detecting light source capable of oscillating light having a plurality of wavelengths different from the wavelength of the laser beam and a wavelength selecting section configured to select one of the plurality of wavelengths as the wavelength of detecting light. The detecting light having the selected wavelength is focused by the focusing lens and applied to the workpiece. | 02-25-2010 |
20100044355 | LASER PROCESSING APPARATUS - A laser processing apparatus having a holding unit for holding a workpiece to be processed and a processing unit for applying a laser beam to the workpiece held by the holding unit. The processing unit includes an oscillator for oscillating the laser beam, a focusing lens for focusing the laser beam oscillated by the oscillator toward the workpiece, and a focal position adjusting mechanism for adjusting the focal position of the laser beam focused by the focusing lens. The focal position adjusting mechanism includes a movable unit having a permanent magnet and supporting the focusing lens, a fixed portion having a coil for moving the movable unit in a direction perpendicular to the workpiece and a gas bearing for supporting the movable unit by using a gas, and a supporting member for supporting the movable unit from the under side by using a magnetic repulsive action. | 02-25-2010 |
20100041317 | WORKPIECE PROCESSING METHOD - A method of processing a workpiece having a plurality of multi-crystal silicon columns embedded in single-crystal silicon includes a grinding step for grinding only the single-crystal silicon by use of a grinding tool and an abrasive step for concurrently polishing the single-crystal silicon and the multi-crystal silicon columns by use of an abrasive tool in a dry manner to expose all the heads of the multi-crystal silicon columns to the front surface of the single-crystal silicon. | 02-18-2010 |
20100041210 | METHOD OF PROCESSING OPTICAL DEVICE WAFER - A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing on the face side of an optical device wafer so as to form breakage starting points along streets; a protective plate bonding step of bonding the face side of the optical device wafer to a surface of a highly rigid protective plate with a bonding agent permitting peeling; a back side grinding step of grinding the back side of the optical device wafer so as to form the optical device wafer to a finished thickness of optical devices; a dicing tape adhering step of adhering the back-side surface of the optical device wafer to a dicing tape; a cut groove forming step of cutting the protective plate bonded to the optical device wafer along the streets so as to form cut grooves; and a wafer dividing step of exerting an external force on the optical device wafer through the protective plate, so as to break up the optical device wafer along the breakage starting points formed along the streets, thereby dividing the optical device wafer into the individual optical devices. | 02-18-2010 |
20100035408 | METHOD OF PROCESSING OPTICAL DEVICE WAFER - A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing to provide an optical device wafer with breakage starting points along streets on the face side of the optical device wafer; a protective plate bonding step of bonding the face side of the optical device wafer to a surface of a highly rigid protective plate with a bonding agent permitting peeling; a back side grinding step of grinding the back side of the optical device wafer so as to form the optical device wafer to a finished thickness of the optical devices; a wafer supporting step of adhering the back-side surface of the optical device wafer to a surface of a dicing tape, and peeling the protective plate adhered to the face side of the optical device wafer; and a wafer dividing step of exerting an external force on the optical device wafer so as to break up the optical device wafer along the streets along which the breakage starting points have been formed, thereby dividing the optical device wafer into the individual optical devices. | 02-11-2010 |
20100015784 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves form the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves. | 01-21-2010 |
20100009549 | WAFER TREATING METHOD - A wafer treating method includes the steps of irradiating a wafer, provided with devices on the face side, from the back side with a laser beam capable of being transmitted through the wafer, while converging the laser beam to a predetermined depth, so as to form a denatured layer between the face side and the back side of the wafer, and separating the wafer into a back-side wafer on the back side relative to the denatured layer and a face-side wafer on the face side relative to the denatured layer. The denatured layer remaining in the face-side wafer is removed, and the face-side wafer is finished to a predetermined thickness, whereby the devices constituting the face-side wafer are finished into products, and the back-side wafer is recycled. | 01-14-2010 |
20100003805 | SEMICONDUCTOR DEVICE FABRICATION METHOD - A semiconductor device fabrication method for dividing a semiconductor wafer into individual devices along a plurality of streets. The method includes a masking step of attaching a mask member having a plurality of openings to the back side of the semiconductor wafer, the openings respectively corresponding to the devices formed on the front side of the semiconductor wafer, an electrode forming step of forming a metal layer on the back side of the semiconductor wafer after performing the masking step to thereby form a plurality of electrodes on the back side of the semiconductor wafer so that the electrodes respectively correspond to the devices formed on the front side of the semiconductor wafer, a mask member stripping step of stripping the mask member from the back side of the semiconductor wafer, a modified layer forming step of applying a laser beam having a transmission wavelength to the semiconductor wafer along the streets, thereby forming a modified layer in the semiconductor wafer along each street, and a dividing step of applying an external force to the semiconductor wafer, thereby dividing the semiconductor wafer along each street. | 01-07-2010 |
20100003119 | METHOD FOR PICKING UP DEVICE ATTACHED WITH ADHESIVE TAPE - A method for picking up a device stuck with an adhesive film includes an tape expansion step for expanding a dicing tape to increase intervals between devices and between adhesive films by pressing an area between an inner diameter of the annular frame of the dicing tape and the wafer by means of an expansion member with the annular frame held; and a picking-up step for picking up the device and the adhesive film from the dicing tape. A relative shifting rate between the expansion member and the frame holding means is set to 100 mm/second or more when the expansion member and the dicing tape are brought into abutment against each other in the tape expansion step, and the increased intervals between the devices and between the adhesive films are each set to 100 μm or more. | 01-07-2010 |
20100000654 | ADHESIVE TAPE ATTACHING METHOD - An adhesive tape attaching method for attaching an adhesive tape to the back side of a wafer, the wafer having a device area where a plurality of devices are formed on the front side of the wafer and a peripheral marginal area surrounding the device area, wherein the back side of the wafer is formed with a circular recess corresponding to the device area and an annular reinforcing portion surrounding the circular recess so as to correspond to the peripheral marginal area. The adhesive tape attaching method includes the steps of holding the wafer and the adhesive tape in a low-pressure condition so that the back side of the wafer is opposed to the adhesive surface of the adhesive tape, fixedly providing a plate member in the condition where the plate member is opposed to the nonadhesive surface of the adhesive tape, pressing the back side of the wafer against the adhesive surface of the adhesive tape, and engaging the plate member into the circular recess formed on the back side of the wafer in the condition where the adhesive tape is closely fitted in the circular recess. | 01-07-2010 |
20090325380 | METHOD FOR FORMING ELECTRODE ON SEMICONDUCTOR WAFER - In accordance with an embodiment of the present invention, there is provided a method for forming an electrode of a semiconductor wafer. The method includes a masking step of applying a mask having apertures formed in areas corresponding to an electrode area of each device, on the back surface of a semiconductor substrate, and an electrode forming step of depositing, by sputtering, gold on the back surface of the semiconductor substrate for which the masking step has been carried out to thereby form the electrode in the electrode area of each device, on the back surface of the semiconductor substrate. The method further includes a mask separating step of separating the mask applied on the back surface of the semiconductor substrate for which the electrode forming step has been carried out, and a gold collecting step of collecting gold deposited on the mask separated in the mask separating step. | 12-31-2009 |
20090311848 | OPTICAL DEVICE WAFER DIVIDING METHOD - An optical device wafer dividing method includes a rear surface grinding step for grinding a rear surface of the optical device wafer; a dicing tape sticking step for sticking the front surface of the optical device wafer bonded with the reinforcing substrate to the front surface of a dicing tape; a laser processing step for emitting a laser beam along the streets formed on the optical device wafer from the rear surface of the reinforcing substrate to perform laser processing on the reinforcing substrate along the streets to form fracture starting points; and a wafer dividing step for applying an external force along the fracture starting points of the reinforcing substrate to fracture the reinforcing substrate along the fracture starting points to fracture the optical device wafer along the streets. | 12-17-2009 |
20090298263 | DIVIDING METHOD FOR WAFER HAVING FILM ON THE FRONT SIDE THEREOF - A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street. | 12-03-2009 |
20090291544 | WAFER LASER PROCESSING METHOD AND APPARATUS - A wafer laser processing method for forming deteriorated layers along a plurality of streets in the inside of a wafer having a device area where a plurality of areas are sectioned by the plurality of streets arranged in a lattice pattern on the front surface and devices are formed in the sectioned areas and having a peripheral excess area surrounding the device area, the surface of the device area being formed to be higher than the surface of the peripheral excess area, by applying a laser beam to the front surface of the wafer along the streets with its focal point set to the inside of the wafer, comprising a first deteriorated layer forming step for forming a deteriorated layer along the streets in the insides of the peripheral excess area and the device area by applying a laser beam to the peripheral excess area and the device area along the streets with its focal point set to the insides of the peripheral excess area and the device area from the front surface side of the wafer; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the device area by applying a laser beam to the device area along the streets with its focal point set to the inside of the device area without applying the laser beam to the peripheral excess area when the focal point of the laser beam is positioned near the front surface of the peripheral excess area. | 11-26-2009 |
20090280722 | GRINDING MACHINE AND METHOD - A grinding machine is provided which includes a holding table adapted to hold a workpiece; a grinding unit operative to grind the workpiece held on the holding piece; and a grinding unit transfer mechanism operative to shift the grinding unit in a direction coming close to or moving away from the workpiece. The grinding unit includes a porous pad having a large number of fine pores opposed to the workpiece held on the holding table, a gel-like slurry storing portion provided on the porous pad so as to store gel-like slurry therein, and a water supply unit operative to supply water between the porous pad and the workpiece. The porous pad contains superabrasives at least at an outer circumferential portion, and the fine pores of the porous pad each have a diameter greater than that of each of the superabrasives contained in the gel-like slurry. | 11-12-2009 |