| DESNO CORPORATION Patent applications |
| Patent application number | Title | Published |
|---|
| 20090278167 | Semiconductor device including a plurality of chips and method of manufacturing semiconductor device - A semiconductor device includes a first chip and a second chip. The first chip includes a first conductivity type channel power MOSFET. The second chip includes a second conductivity type channel power MOSFET. The first chip and the second chip are integrated in such a manner that a second-surface drain electrode of the first chip and a second-surface drain electrode of the second chip face to each other and are electrically coupled with each other through a conductive material. | 11-12-2009 |
| 20090114985 | Semiconductor apparatus and method for manufacturing the same - A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other. | 05-07-2009 |
