| Crystal IS, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110011332 | METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE - A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm | 01-20-2011 |
| 20100187541 | Doped Aluminum Nitride Crystals and Methods of Making Them - Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. | 07-29-2010 |
| 20100135349 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 06-03-2010 |
| 20090283028 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 11-19-2009 |
| 20090050050 | DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS - Single-crystal materials are fabricated from a melt at temperatures below their melting points. | 02-26-2009 |
