| CREE, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120115319 | CONTACT PAD - The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process. | 05-10-2012 |
| 20120112661 | LIGHTING DEVICE WITH MULTIPLE EMITTERS AND REMOTE LUMIPHOR - A lighting device including a plurality of electrically activated emitters having different peak wavelengths, at least one remote lumiphor arranged to receive at least some emissions from one of the emitters, and a primary electrically activated emitter spatially segregated and/or thermally insulated from a secondary electrically activated emitter. A lighting device including a plurality of electrically activated emitters spatially segregated from one another having different peak wavelengths, at least one lumiphor spatially segregated from one of the emitters, and a control device independently connected to each emitter or group of emitters. A method of producing a lighting device including a plurality of independently controllable electrically activated emitters. | 05-10-2012 |
| 20120112614 | LIGHTING DEVICE WITH SPATIALLY SEGREGATED PRIMARY AND SECONDARY EMITTERS - A lighting device includes at least one first electrically activated emitter, at least one lumiphor support element comprising a lumiphoric material spatially segregated from the first electrically activated emitter and arranged to receive at least a portion of emissions from the first electrically activated emitter, and at least one second electrically activated emitter disposed on or adjacent to the at least one lumiphor support element. First and second electrically activated emitters having different peak wavelengths may be in conductive with first and second device-scale heat sinks, respectively. | 05-10-2012 |
| 20120111471 | OPTICAL ELEMENTS WITH INTERNAL OPTICAL FEATURES AND METHODS OF FABRICATING SAME - An optical element, comprising a substrate and at least one optical film. The substrate is at least partially light-transmissive. The optical film comprises at least a first optical feature and is positioned on a contact surface of the substrate. Also, a lighting device comprising at least one solid state light emitter and such an optical element. Also, methods for making an optical element by molding (e.g., film insert molding), bonding or laminating. | 05-10-2012 |
| 20120106176 | LIGHTING APPARATUS - The present disclosure relates to a lighting apparatus that includes a light engine that is coupled to a heat sink. The light engine provides a light source that generates light, and heat that is generated by the light source is dissipated, at least in part, via the heat sink. | 05-03-2012 |
| 20120105147 | MATCHING NETWORK FOR TRANSMISSION CIRCUITRY - The present disclosure relates to transmission circuitry of a wireless communication device. The transmission circuitry includes power amplifier circuitry, an output matching network, and impedance control circuitry. The power amplifier circuitry amplifies a radio frequency (RF) input signal to provide an amplified RF output signal, which is passed through the output matching network and transmitted via one or more antennas. As the center frequency of the RF input signal and conditions of operating parameters change, the impedance control circuitry adjusts the values of one or more variable impedance elements of the output matching network in a desired fashion. The values of the variable impedance elements are adjusted such that the output matching network concurrently and dynamically presents the desired load impedances at the center frequency and at one or more harmonics of the RF input signal to achieve a given performance specification. | 05-03-2012 |
| 20120104955 | LED WITH INTEGRATED CONSTANT CURRENT DRIVER - An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circuitry typically contains a power converter and a constant current circuit. The LED package may also contain other active or passive components such as pin-outs for integrated or external components, a transformer and rectifier, or a rectifier circuit. External components can include control systems for regulating the LED current level or the properties of light emitted by the LED. Integrating the power supply and current control components into the LED can provide for fabrication of relatively small LEDs using fewer and less device-specific components. | 05-03-2012 |
| 20120102800 | SIGN AND METHOD FOR LIGHTING - A sign comprising a surface having a display, and a plurality of sources of visible light. The sources of visible light are oriented to illuminate at least a portion of the display, and include solid state light emitters and/or luminescent materials. Line segments drawn on a Chromaticity Diagram connecting coordinates of some of the illumination color hues define a shape which encompasses coordinates of the display color hue(s). Also, a sign comprising a surface having a display having a surface area of at least 4 square meters, and at least 100 sources of visible light including solid state light emitters and/or luminescent materials. Also, a sign comprising a white light source and at least one additional source of light. Also, methods of illuminating signs. | 05-03-2012 |
| 20120092850 | OPTICAL ELEMENT EDGE TREATMENT FOR LIGHTING DEVICE - A lighting device includes an electrically activated emitter, a lumiphoric material spatially segregated from the emitter, and an optical element arranged between the emitter and the lumiphoric material and having at least one peripheral edge, wherein a reflective material is disposed proximate to the at least one peripheral edge and/or wherein the at least one peripheral edge is non-perpendicular to a face of the optical element and arranged to reflect light in a direction toward the lumiphoric material. An optical element for use with a lighting device including a lumiphoric material includes a peripheral edge, wherein a reflective material disposed substantially parallel to the peripheral edge and/or wherein the peripheral edge is non-perpendicular to a face of the optical element and arranged to reflect light in a direction toward the lumiphoric material. | 04-19-2012 |
| 20120087137 | LED PACKAGE MOUNT - A light emitting diode package mounting apparatus comprises a heatsink defining a surface comprising one of a male or female connector. An LED package has a base where a portion of the base defines the other of the female or male connector. The connectors engage one another such that a force is exerted on the base that presses the LED package against the surface. To assemble the LED package in the heat sink, the LED package is located on the surface. The LED package and heatsink are moved relative to one another such that the male connector is inserted into the female connector. | 04-12-2012 |
| 20120075833 | LED LAMP - A thermal isolation arrangement for an LED lamp is disclosed. Embodiments of the invention provide thermal isolation between the power supply and the LED assembly of an LED lamp, in most cases allowing the power supply to operate in a lower temperature range than would otherwise be possible. At least one contact feature is provided between the power supply and the LED assembly to maintain a thermal transfer gap between the power supply and the LED assembly. A contact feature can be, for example, a triangular ridge or a conical protrusion. In some embodiments, a thermal isolation device provides the contact feature or contact features. An LED lamp according to example embodiments of the invention can have a modular design and/or can include an Edison base and/or an optical element or optical elements disposed to emit light from the LED lamp. | 03-29-2012 |
| 20120069564 | MULTI-CHIP LED DEVICES - Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips. | 03-22-2012 |
| 20120068198 | HIGH DENSITY MULTI-CHIP LED DEVICES - High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption. | 03-22-2012 |
| 20120033429 | LIGHTING DEVICES WITH REMOVABLE LIGHT ENGINE COMPONENTS, LIGHTING DEVICE ELEMENTS AND METHODS - A lighting device, comprising a lighting device element and a light engine component (comprising a solid state light emitter) that is removably supported by the lighting device element. Also, lighting device elements that comprise a lens, a housing member, a mechanical engagement region, an electrical contact region and/or means for removably supporting a light engine component. Also, lighting device elements in which a retaining structure holds a light engine component, a portion of a light engine component is exposed to a lens. Also, lighting devices that comprise means for removably supporting a light engine component. Also, methods that comprise removing a light engine component from a lighting device element and removably supporting a second light engine component on the lighting device element. | 02-09-2012 |
| 20120032727 | CIRCUIT BREAKER - A circuit breaker is provided that includes primary and secondary paths that extend between first and second terminals. The primary path extends between the first and second terminals and through a first switch. The secondary path extends between the first and second terminals and through the second switch and a semiconductor switching element. During normal operation, a control system maintains the first and second switches in closed position and the semiconductor switching element in blocking state. When a fault condition occurs in the load current, the control system detects the fault condition and sets the semiconductor switching element to conducting state. The control system then sets the first switch to open position such that the load current flows between the first and second terminals through the secondary path. The control system then sets the second switch to open position and the semiconductor switching element to blocking state. | 02-09-2012 |
| 20120032208 | LIGHT EMISSION DEVICE - A light emission device includes multiple electrically activated solid state emitters (e.g., LEDs) having differing spectral output from one another; and/or phosphor material including one or more phosphors arranged to receive spectral output from at least one of the solid state emitters and to responsively emit a phosphor output, to provide spectral output. In one arrangement, multiple LEDs and multiple phosphors have different peak wavelengths and provide aggregated light output with less than four light emission peaks. In one arrangement, a plot of aggregated output emissions (light intensity versus wavelength) has a non-negative slope between more than two wavelength peaks. In one arrangement, a light emission device generates a user-perceptible transition in color of light at a predetermined time period as an indicative of a need to perform at least one selected task. | 02-09-2012 |
| 20120025235 | LIGHTING DEVICES THAT COMPRISE ONE OR MORE SOLID STATE LIGHT EMITTERS - A lighting device, comprising a solid state light emitter and a removable encapsulant element. A lighting device element, comprising a solid state light emitter and an encapsulant holding element configured to releasably hold a removable encapsulant element. A lighting device component, comprising a removable encapsulant element. A method, comprising removing a first removable encapsulant element from a lighting device that comprises at least a first solid state light emitter and inserting a second removable encapsulant element into the lighting device. An encapsulant element comprising a substantially transparent first material and a luminescent material within the first material. | 02-02-2012 |
| 20120019137 | LIGHTING UNIT USING A RETRO-FORMED COMPONENT - An LED lighting system using a retro-formed component is disclosed. Embodiments of the invention make use of a component that has an external form factor of a structural element of a pre-existing light fixture. The component, for example, can be a power supply, or a heat sink with a connector. The component allows an LED lighting unit to be used without having the power supply and/or a heat sink take up space within what a consumer would normally see as the light bulb. In some embodiments the form factor is that of a screw-in socket such as an Edison E-26 socket. A connector or connectors can allow removal of the power supply portion of the lighting unit, or of the LED and possibly an optical element from the power supply. | 01-26-2012 |
| 20120018751 | LIGHTING DEVICE - A first lighting device comprises at least one plural cavity element and a plurality of solid state light emitters. A second lighting device comprises at least one plural cavity element, a plurality of solid state light emitters and at least one encapsulant region, at least a portion of the plural cavity element being surrounded by the encapsulant region. Each plural cavity element has at least two optical cavities. Each optical cavity comprises a concave region in the plural cavity element. At least one solid state light emitter is present in each of at least two of the optical cavities. | 01-26-2012 |
| 20120018738 | ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SURFACE PASSIVATION - Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a number of semiconductor layers of a desired semiconductor material having alternating doping types. The semiconductor layers include a base layer of a first doping type that includes a highly doped well forming a first contact region of the electronic device and one or more contact layers of a second doping type on the base layer that have been etched to form a second contact region of the electronic device. The etching of the one or more contact layers causes substantial crystalline damage, and thus interface charge, on the surface of the base layer. In order to passivate the surface of the base layer, a semiconductor ledge layer of the semiconductor material is epitaxially grown on at least the surface of the base layer. | 01-26-2012 |
| 20120018737 | ELECTRONIC DEVICE STRUCTURE INCLUDING A BUFFER LAYER ON A BASE LAYER - Electronic device structures that compensate for non-uniform etching on a semiconductor wafer and methods of fabricating the same are disclosed. In one embodiment, the electronic device includes a number of layers including a semiconductor base layer of a first doping type formed of a desired semiconductor material, a semiconductor buffer layer on the base layer that is also formed of the desired semiconductor material, and one or more contact layers of a second doping type on the buffer layer. The one or more contact layers are etched to form a second contact region of the electronic device. The buffer layer reduces damage to the semiconductor base layer during fabrication of the electronic device. Preferably, a thickness of the semiconductor buffer layer is selected to compensate for over-etching due to non-uniform etching on a semiconductor wafer on which the electronic device is fabricated. | 01-26-2012 |
| 20110317093 | LED BACKLIGHT SYSTEM FOR LCD DISPLAYS - A LCD system including multiple light sources optically coupled through different light entry regions to at least one waveguide element positioned to backlight a LCD panel. A LCD system including multiple light sources coupled to light entry regions of two or more waveguides comprising a waveguide system positioned to backlight a LCD panel. Waveguides of various configurations and promoting even lighting of associated LCD panels are provided. Resulting LCD systems enable uniformly lit panels having diagonal measurements in excess of 12 to 14 inches, but the invention is not limited to panels of any particular size. | 12-29-2011 |
| 20110310602 | LIGHTING DEVICE AND LIGHTING METHOD - There is provided a lighting device comprising one or more groups of solid state light emitters and one or more groups of lumiphors, which emits mixed illumination having x, y color coordinates within a region defined by (0.32, 0.40), (0.36, 0.38), (0.41, 0.455), and (0.36, 0.48). Also, such lighting devices which emit light having x, y color coordinates within other specified regions. Also, such lighting devices with respective groups which emit light within two specified regions, and which mix to produce light within such regions. Also, methods of lighting light from such emitters and/or lumiphors. | 12-22-2011 |
| 20110298371 | LED LIGHT BULBS - LED light bulbs include openings in base or cover portions, and optional forced flow elements, for convective cooling. Thermally conductive optically transmissive material may be used for cooling, optionally including fins. A LED light engine may be fabricated from a substrate via planar fabrication techiques and shaped to form a substantially rigid upright support structure. Mechanical, electrical, and thermal connections may be made between a LED light engine and a LED light bulb. | 12-08-2011 |
| 20110298350 | LIGHTING DEVICE WITH REVERSE TAPERED HEATSINK - A solid state lighting devices includes a heatsink having a first end arranged proximate to a base end, and a second end arranged between the first end and a solid state emitter, wherein at least a portion of the heatsink is wider at point intermediate the first end and the second end than the width of the heatsink at the second end. Such reverse angled heatsink reduces obstruction of light. A heatsink may include multiple fins and a heatpipe. | 12-08-2011 |
| 20110291104 | SMOOTHING METHOD FOR SEMICONDUCTOR MATERIAL AND WAFERS PRODUCED BY SAME - A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer. | 12-01-2011 |
| 20110279015 | LIGHTING DEVICE AND METHOD OF MAKING - A lighting device comprising first and second groups of non-white light sources emitting light outside a first area on a 1976 CIE Chromaticity Diagram bounded by a curves 0.01 u′v′ above and below the blackbody locus and within a second area enclosed by saturated light curves from 430 to 465 nm and from 560 to 580 nm and segments from 465 to 560 nm and from 580 to 430 nm and a supplemental light emitter in the range of 600 to 640 nm. Also, a lighting device, comprising a first string of non-white phosphor converted light sources with excitation sources having dominant wavelengths that differ by at least 5 nm, a second string of non-white light sources, and a third string of supplemental light emitters in the range of 600 to 640 nm. | 11-17-2011 |
| 20110273882 | OPTICAL ELEMENT FOR A LIGHT SOURCE AND LIGHTING SYSTEM USING SAME - An optical element for a light source and a lighting system using the optical element are disclosed. In example embodiments, the optical element includes an entry surface and an exit surface opposite the entry surface. The entry surface includes at least three subsurfaces, wherein each subsurface is disposed to receive light rays leaving light source. Each of the three subsurfaces is geometrically shaped and positioned to receive light rays entering the optical element through that subsurface in order to direct the light passing through the optical element. In some embodiments the optical element includes a concentrator lens disposed in the exit surface. The optical element can also include a mixing treatment. A lighting system can include multiple optical elements, each paired with a light source such as an LED or LED package. | 11-10-2011 |
| 20110273645 | LED BACKLIGHT SYSTEM FOR LCD DISPLAYS - A LCD system including multiple light sources optically coupled through different light entry regions to at least one waveguide element positioned to backlight a LCD panel. A LCD system including multiple light sources coupled to light entry regions of two or more waveguides comprising a waveguide system positioned to backlight a LCD panel. Waveguides of various configurations and promoting even lighting of associated LCD panels are provided. Resulting LCD systems enable uniformly lit panels having diagonal measurements in excess of 12 to 14 inches, but the invention is not limited to panels of any particular size. | 11-10-2011 |
| 20110273095 | FREQUENCY CONVERTED DIMMING SIGNAL GENERATION - There is provided a lighting control circuit comprising a duty cycle detection circuit, an averaging circuit, a waveform generator and a comparator circuit. The duty cycle detection circuit generates a first periodic waveform having a duty cycle and frequency corresponding to an input waveform duty cycle and frequency. The averaging circuit generates a first signal having a voltage level corresponding to the duty cycle of the first periodic waveform. The waveform generator outputs a second periodic waveform having a frequency different from the input waveform frequency. The comparator circuit compares the second periodic waveform with the first signal to generate an output waveform having a duty cycle corresponding to the input waveform duty cycle and a frequency corresponding to the frequency of the second periodic waveform. Also, there are provided methods. | 11-10-2011 |
| 20110267821 | LIGHTING DEVICE WITH HEAT DISSIPATION ELEMENTS - A lighting device, comprising a solid state light emitter and first and second heat dissipation elements. In some devices, (1) the first heat dissipation element is in the path of at least some of the light emitted, (2) at least half of the 25% of the surface area of a first heat dissipation element that is closest to the first solid state light emitter is exposed, (3) at least part of a heat dissipation element is transparent or reflective, and a portion light from the light emitter goes in a specified range of directions, (4) angular size of gaps between heat dissipation elements are limited, and/or (5) at least 25% of heat generated by the light emitter(s) is dissipated in regions toward which light emitted by light emitter(s) is directed. Also, a lighting device comprising a solid state light emitter and means for dissipating heat. | 11-03-2011 |
| 20110267812 | SOLID STATE LIGHTING DEVICE, AND METHOD OF ASSEMBLING THE SAME - A lighting device comprising a light emitter positioning element and first and second solid state light emitters positioned on the first light emitter positioning element, at least a first portion of the first light emitter positioning element of a spiral shape. Also, a lighting device comprising first and second solid state light emitters and means for dissipating heat from them. Also, a method of assembling a lighting device, comprising positioning a first light emitter positioning element that comprises a ledge, so that at least a part of it is in contact with a support structure, at least first and second solid state light emitters being on the positioning element, and pressing the positioning element to bring it into contact with the ledge. | 11-03-2011 |
| 20110266556 | METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME - A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die. | 11-03-2011 |
| 20110250737 | TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION - A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. | 10-13-2011 |
| 20110248836 | LIGHTING APPARATUS WITH ENCODED INFORMATION - A solid state emitter or emitter package has an associated information containing element including machine readable encoded information that may be indicative of or enable retrieval of information useful for operation and/or control of at least one emitter An information containing element may be dynamically updateable, and may receive signals from at least one sensor arranged to sense a condition or characteristic of an emitter device. Operation of at least one emitter may be adjusted responsive to sensed values and predeveloped operating settings correlated to such values to mitigate degradation of output characteristics. A lighting device such as a lamp or light fixture may include an information exchange element arranged to communicate with an information containing element of an emitter or emitter package. Operation of a lighting device may depend on authentication of an emitter by a lighting. | 10-13-2011 |
| 20110248290 | Methods and Apparatus for LED Lighting with Heat Spreading in Illumintion Gaps - Techniques for light emitting diode (LED) lighting with heat spreading in illumination gaps. Inexpensive structural aluminum may be suitably employed to form a passive heat spreading mount for plural LEDs whose illumination collectively combines to provide the light needed by a particular lighting fixture, such as a pendant chandelier, by way of example, by angling fins of the passive heat spreading mount to correspond to illumination gaps of the LEDs. | 10-13-2011 |
| 20110242453 | LIGHT DEVICES, DISPLAY DEVICES, BACKLIGHTING DEVICES, EDGE-LIGHTING DEVICES, COMBINATION BACKLIGHTING AND EDGE-LIGHTING DEVICES - In some embodiments, an LCD device comprising (1) liquid crystals, (2) at least one lighting device that emits BSY-1, BSY-2, BSR, BSG-1, BSG-2 and/or BSG-3 light, (3) solid state light emitters (430-480 nm) and luminescent material (555-585 nm, 595-625 nm, or 510-560 nm), and/or (4) a light guide, a reflector and/or a light polarizer. In some embodiments, a light device comprising (1) at least one lighting device that emits BSY-1, BSY-2, BSR, BSG-1, BSG-2 and/or BSG-3 light, (2) a light guide, a reflector and/or a light polarizer, and/or (3) solid state light emitters (430-480 nm) and luminescent material (555-585 nm, 595-625 nm, or 510-560 nm). | 10-06-2011 |
| 20110233521 | SEMICONDUCTOR WITH CONTOURED STRUCTURE - The present disclosure relates to a semiconductor device that has a first semiconductor structure that is grown to form a non-planar growth surface. The non-planar growth surface is formed from multiple facets and provides a defined contour. The defined contour may include, but is not limited to a corrugated contour or a pyramidal contour. A second semiconductor structure is grown over the non-planar growth surface of the first semiconductor structure, and as such, the second semiconductor structure is non-planar and follows the defined contour of the non-planar growth surface of the first semiconductor structure. The first and second semiconductor structures may form the foundation for various types of electrical and optoelectrical semiconductor devices, such as diodes, transistors, thyristors, and the like. | 09-29-2011 |
| 20110222277 | HIGH CRI LIGHTING DEVICE WITH ADDED LONG-WAVELENGTH BLUE COLOR - Solid state lighting devices include least one solid state emitter and multiple lumiphors, arranged to output aggregated emissions comprising at least one short wavelength blue peak, at least one long wavelength blue (LWB) peak, at least one yellow and/or green peak, and at least one red and/or orange peak. Presence of long wavelength blue enhances color rendering. At least one solid state emitter may include a short wavelength blue LED, LWB LED, and/or UV LED. Multiple emitters may be provided. Resulting devices may provide CRI greater than 85, efficiency of greater than 50 lm/watt, and color stability in a range of Δu′v′≦0.008 over a temperature change of 75° C. | 09-15-2011 |
| 20110221330 | HIGH CRI LIGHTING DEVICE WITH ADDED LONG-WAVELENGTH BLUE COLOR - Solid state lighting devcies include least one solid state emitter and multiple lumiphors, arranged to output aggregated emissions comprising at least one short wavelength blue peak, at least one long wavelength blue (LWB) peak, at least one yellow and/or green peak, and at least one red and/or orange peak. Presence of long wavelength blue enhances color rendering. At least one solid state emitter may include a short wavelength blue LED, LWB LED, and/or UV LED. Multiple emitters may be provided. Resulting devices may provide CRI greater than 85, efficiency of greater than 50 lm/watt, and color stability in a range of Δu′v′≦0.008 over a temperature change of 75° C. | 09-15-2011 |
| 20110211351 | LIGHTING DEVICES THAT COMPRISE ONE OR MORE SOLID STATE LIGHT EMITTERS - Light engine modules comprise a support member and a solid state light emitter, in which (1) the emitter is mounted on the support member, (2) a region of the support member has a surface with a curved cross-section, (3) the emitter and a compensation circuit are mounted on the support member, (4) an electrical contact element extends to at least two surfaces of the support member, and/or (5) a substantial entirety of the module is located on one side of a plane and the emitter emits light into another side of the plane. Also, a module comprising means for supporting a light emitter and a light emitter. Also, a lighting device comprising a housing member and a light emitter mounted on a removable support member. Also, a lighting device comprising a module mounted in a lighting device element. Also, a method comprising mounting a module to a lighting device element. | 09-01-2011 |
| 20110169031 | SOLID STATE LIGHTING DEVICE WITH IMPROVED HEATSINK - A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device. | 07-14-2011 |
| 20110169013 | GROWING POLYGONAL CARBON FROM PHOTORESIST - A method of growing polygonal carbon from photoresist and resulting structures are disclosed. Embodiments of the invention provide a way to produce polygonal carbon, such as graphene, by energizing semiconductor photoresist. The polygonal carbon can then be used for conductive paths in a finished semiconductor device, to replace the channel layers in MOSFET devices on a silicon carbide base, or any other purpose for which graphene or graphene-like carbon material formed on a substrate is suited. In some embodiments, the photoresist layer forms both the polygonal carbon layer and an amorphous carbon layer over the polygonal carbon layer, and the amorphous carbon layer is removed to leave the polygonal carbon on the substrate. | 07-14-2011 |
| 20110165771 | METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The polished surface of the silicon carbide substrate is then masked to define a predetermined location for at least one via that is opposite the device metal contact and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, the via is metallized. | 07-07-2011 |
| 20110147764 | TRANSISTORS WITH A DIELECTRIC CHANNEL DEPLETION LAYER AND RELATED FABRICATION METHODS - A metal-insulator-semiconductor field-effect transistor (MISFET) includes a semiconductor layer with source and drain regions of a first conductivity type spaced apart therein. A channel region of a first conductivity type extends between the source and drain regions. A gate contact is on the channel region. A dielectric channel depletion layer is between the gate contact and the channel region. The dielectric channel depletion layer provides a net charge having the same polarity as the first conductivity type charge carriers, and which may deplete the first conductivity type charge carriers from an adjacent portion of the channel region when no voltage is applied to the gate contact. | 06-23-2011 |
| 20110140122 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME - Large area single crystal III-V nitride material having an area of at least 2 cm | 06-16-2011 |
| 20110133223 | SOLID STATE EMITTER PACKAGES - A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element. A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm. | 06-09-2011 |
| 20110108855 | METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer. | 05-12-2011 |
| 20110101377 | HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS - A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, with the implantation being carried out at a temperature higher than room temperature and hot enough to reduce the amount of damage done to the Group III nitride layer, but below a temperature at which surface problems causing leakage at the gate or epitaxial layer dissociation would occur. An ohmic contact selected from the group consisting of titanium, aluminum, nickel and alloys thereof is added to the implanted defined position on the Group III nitride layer. | 05-05-2011 |
| 20110096263 | LED BACKLIGHT SYSTEM FOR LCD DISPLAYS - A LCD system including multiple light sources optically coupled through different light entry regions to at least one waveguide element positioned to backlight a LCD panel. A LCD system including multiple light sources coupled to light entry regions of two or more waveguides comprising a waveguide system positioned to backlight a LCD panel. Waveguides of various configurations and promoting even lighting of associated LCD panels are provided. Resulting LCD systems enable uniformly lit panels having diagonal measurements in excess of 12 to 14 inches, but the invention is not limited to panels of any particular size. | 04-28-2011 |
| 20110089536 | ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <11 | 04-21-2011 |
| 20110080720 | Methods and Apparatus for Mounting and Electrical Connection - A connector for connecting surface mount devices, such as light emitting diodes (LEDs), to printed circuit boards (PCBs). The connector may be prepackage with an LED assembly or on a PCB to which the LED assembly will be mounted. Connection complexity can be moved from the PCB to the connector, and LED assemblies may be customized differently for different customers. One to many and many to one connections are readily supported with variations on the connector. | 04-07-2011 |
| 20110074270 | LIGHTING DEVICE HAVING HEAT DISSIPATION ELEMENT - A lighting device comprising a light source and at a heat dissipation element comprising at least first and second substantially transparent regions and at least a first fluid, at least a portion of the first fluid being positioned in a space between the transparent regions. Also, a lighting device comprising a light source, an enclosed space through which light passes and a fluid in the space. Also, a lighting device comprising a light source and heat conducting means for dissipating heat. Also, a lighting device comprising a light source and a heat dissipation element comprising first and second substantially transparent regions coupled with a space and a fluid in the space. Also, a lighting device comprising a light source and a heat dissipation element comprising a heat pipe that comprises a substantially transparent region. | 03-31-2011 |
| 20110069499 | LIGHTING DEVICES AND METHODS OF INSTALLING LIGHT ENGINE HOUSINGS AND/OR TRIM ELEMENTS IN LIGHTING DEVICE HOUSINGS - A lighting device, comprising a housing and at least one mounting clip. The housing comprises an electrical connection region engageable in an electrical receptacle. The mounting clip is pivotable from a first position, where an end region of the mounting clip does not extend beyond a periphery of the housing, to a second position, where the end region extends beyond the housing periphery. Also, a lighting device, comprising a housing, a trim element and at least one mounting clip. The mounting clip is pivotable, such that if the mounting clip is in a second position and then the trim element is rotated, the mounting clip will pivot to a third position, where the mounting clip engages the housing such that the trim element is biased toward a ceiling or other structure in which the lighting device is mounted. Also, methods of installing housings and/or trim elements. | 03-24-2011 |
| 20110064105 | SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS - A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics. | 03-17-2011 |
| 20110050125 | MULTI-CHIP LIGHT EMITTING DEVICE LAMPS FOR PROVIDING HIGH-CRI WARM WHITE LIGHT AND LIGHT FIXTURES INCLUDING THE SAME - A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die mounting region. The LED lamp is configured to emit light having a spectral distribution including at least four different color peaks to provide the white light. For example, a first conversion material may at least partially cover the first LED chip, and may be configured to absorb at least some of the light of the first color and re-emit light of a third color. In addition, a second conversion material may at least partially cover the first and/or second LED chips, and may be configured to absorb at least some of the light of the first and/or second colors and re-emit light of a fourth color. Related light fixtures and methods are also disclosed. | 03-03-2011 |
| 20110024766 | ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER - A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder. | 02-03-2011 |
| 20110019399 | LIGHTING DEVICE AND LIGHTING METHOD - A lighting device comprising first and second groups of solid state light emitters, which emit light having peak wavelength in ranges of from 430 nm to 480 nm, and first and second groups of lumiphors which emit light having dominant wavelength in the range of from 555 nm to 585 nm. In some embodiments, if current is supplied to a power line, a combination of (1) light exiting the lighting device which was emitted by the first group of emitters, and (2) light exiting the lighting device which was emitted by the first group of lumiphors would have a correlated color temperature which differs by at least 50 K from a correlated color temperature which would be emitted by a combination of (3) light exiting the lighting device which was emitted by the second group of emitters, and (4) light exiting the lighting device which was emitted by the second group of lumiphors. | 01-27-2011 |
| 20110018466 | MULTI-ELEMENT LED LAMP PACKAGE - In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided. | 01-27-2011 |
| 20100320477 | PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES - A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration. | 12-23-2010 |
| 20100308337 | Schottky Diodes Including Polysilicon Having Low Barrier Heights and Methods of Fabricating the Same - Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein. | 12-09-2010 |
| 20100301351 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 12-02-2010 |
| 20100289122 | III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME - A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10 | 11-18-2010 |
| 20100270567 | LIGHTING DEVICE - A light emission package includes multiple colored solid state emitters each having a different non-white dominant wavelength in the visible range, and at least one lumiphor arranged to receive emissions from at least one other solid state emitter, with each emitter arranged on or adjacent to a common submount. The at least one other emitter and lumiphor may be arranged in combination to emit white light. Each emitter is independently controllable, permitting color and/or color temperature of a lighting device to be varied during operation of the device. At least one white emitter may be combined with red, green, and blue LEDs. | 10-28-2010 |
| 20100176405 | Light Emitting Diode Lighting Package with Improved Heat Sink - Improved lighting packages are described for light emitting diode (LED) lighting solutions having a wide variety of applications which seek to balance criteria such as heat dissipation, brightness, and color uniformity. The present approach includes a backing of thermally conductive material. The backing includes a cell structure. The cell structure comprises a plurality of hollow cells contiguously positioned in a side by side manner. The present approach also includes an array of LEDs. The array of LEDs is mounted to a printed circuit board (PCB). The PCB is attached to the cell structure to balance heat dissipation and color uniformity of the LEDs. | 07-15-2010 |
| 20100149771 | Methods and Apparatus for Flexible Mounting of Light Emitting Devices - LED mounting arrangements are described which provide flexibility for LED users to mount a first LED having different physical, electrical, thermal, or other characteristic footprints from those for a second LED on a mounting pad designed for the second LED. With such arrangements, migration from one LED to another can be facilitated without the need for redesigning the printed circuit board for a lighting application. Flexibility is thereby provided to LED customers. | 06-17-2010 |
| 20100148320 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 06-17-2010 |
| 20100134176 | ELECTRONIC DEVICE INCLUDING CIRCUITRY COMPRISING OPEN FAILURE-SUSCEPTIBLE COMPONENTS, AND OPEN FAILURE-ACTUATED ANTI-FUSE PATHWAY - An electronic device including series-connected open failure-susceptible components and re-routing assemblies for directing current through an ancillary current path to maintain operability of the series array despite an open-failed component therein. The re-routing assembly can be constituted as an ancillary circuit containing a bypass control element arranged to maintain the ancillary circuit in a non-current flow condition when none of the open failure-susceptible components has experienced open failure, and to re-route current from a main circuit around an open-failed component therein and through the ancillary circuit and back to the main circuit, to bypass the open-failed component so that all non-failed series components of the main circuit remain operative when electrically energized. | 06-03-2010 |
| 20100134024 | LED THERMAL MANAGEMENT SYSTEM AND METHOD - A thermal management system for reducing or eliminating heat-mediated degradation of LED performance and/or operating life. The system may include a thermal controller arranged to respond to an LED operating condition, and to responsively limit temperature in the LED. The thermal controller in one implementation includes a bypass circuit containing a bypass control element, such as a varistor, Zener diode, or antifuse device, and arranged to divert current from flowing to the LED so that the LED remains in a cool state, e.g., below 75° C. The system may be arranged to (I) at least partially attenuate the power supplied to an LED so as to reduce heat generation in such LED and maintain the LED below a threshold temperature and/or (II) remove heat from the LED to maintain temperature of the LED below a threshold temperature. | 06-03-2010 |
| 20100133554 | SOLID STATE LIGHTING DEVICE - A light emission package includes at least one solid state emitter, a leadframe, and a body structure encasing a portion of the leadframe. At least one aperture is defined in an electrical lead to define multiple electrical lead segments, with at least a portion of the aperture disposed outside an exterior side wall of the package. A recess may be defined in the exterior side wall to receive a bent portion of an electrical lead. A body structure cavity may be bounded by a floor, and side wall portions and end wall portions that are separated by transition wall portions including a curved or segmented upper edge, with different wall portions being disposed at different angles of inclination. | 06-03-2010 |
| 20100101495 | Restricted Radiated Heating Assembly for High Temperature Processing - A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor. | 04-29-2010 |
| 20100090606 | Light Emitting Diode Packages - Lighting packages are described for light emitting diode (LED) lighting solutions having a wide variety of applications which seek to balance criteria such as heat dissipation, brightness, and color uniformity. The present approach includes a backing of thermally conductive material and two or more arrays of LEDs attached to a printed circuit board (PCB). The PCB is attached to the top surface of the backing and the two or more arrays of LEDs are separated by a selected distance to balance heat dissipation and color uniformity of the LEDs. | 04-15-2010 |
| 20100090233 | SIDE-VIEW SURFACE MOUNT WHITE LED - A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element. | 04-15-2010 |
| 20100052004 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10 | 03-04-2010 |
| 20100041195 | METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS - A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer. | 02-18-2010 |
| 20100025730 | Normally-off Semiconductor Devices and Methods of Fabricating the Same - Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein. | 02-04-2010 |
| 20090316408 | Methods and Apparatus for LED Lighting with Heat Spreading in Illumintion Gaps - Techniques for light emitting diode (LED) lighting with heat spreading in illumination gaps. Inexpensive structural aluminum may be suitably employed to form a passive heat spreading mount for plural LEDs whose illumination collectively combines to provide the light needed by a particular lighting fixture, such as a pendant chandelier, by way of example, by angling fins of the passive heat spreading mount to correspond to illumination gaps of the LEDs. | 12-24-2009 |
| 20090309124 | LED Fabrication via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. | 12-17-2009 |
| 20090272984 | Silicon Carbide on Diamond Substrates and Related Devices and Methods - A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics. | 11-05-2009 |
| 20090256162 | Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals - A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically increases the number of point defects and resulting states in the crystal, and then cooling the heated crystal at a sufficiently rapid rate to maintain an increased concentration of point defects in the cooled crystal. | 10-15-2009 |
| 20090242918 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer. | 10-01-2009 |
| 20090215280 | Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides - A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer. | 08-27-2009 |
| 20090207609 | LED Socket and Replaceble LED Assemblies - Socket arrangements for releasably mounting LEDs and light fixtures or assemblies employing such sockets are described. The socket arrangements facilitate the replacement of LEDs to replace an original LED with a brighter replacement, to change the color of the LED, to replace a single LED with a multiple chip LED, to replace a damaged or burned out LED with a new one, or the like. In further assemblies with plural LEDs, the use of ready release sockets facilitates selective replacement of an LED or LEDs and greatly enhances the flexibility of such units. | 08-20-2009 |
| 20090195137 | LIGHT EMISSION DEVICE AND METHOD UTILIZING MULTIPLE EMITTERS - A light emission device includes multiple electrically activated solid state emitters (e.g., LEDs) having differing spectral output from one another; and/or phosphor material including one or more phosphors arranged to receive spectral output from at least one of the solid state emitters and to responsively emit a phosphor output, to provide spectral output. In one arrangement, at least four electrically activated solid state emitters each have different spectral outputs in the visible range, with the emitters arranged in an array positioned on a single reflector cup or other support, with at least two solid state emitters differing substantially in size. Aggregated output may include white light having a color temperature in any of several desired ranges. | 08-06-2009 |
| 20090166659 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode. | 07-02-2009 |
| 20090146154 | Transistor with A-Face Conductive Channel and Trench Protecting Well Region - A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. | 06-11-2009 |
| 20090140326 | SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE - A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability. | 06-04-2009 |
| 20090104738 | Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate. | 04-23-2009 |
| 20090104726 | LED Fabrication Via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation. | 04-23-2009 |
| 20090072241 | GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE - A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability. | 03-19-2009 |
| 20090050908 | Solid state lighting component - An LED component according to the present invention comprising an array of LED chips mounted on a submount with the LED chips capable of emitting light in response to an electrical signal. The array can comprise LED chips emitting at two colors of light wherein the LED component emits light comprising the combination of the two colors of light. A single lens is included over the array of LED chips. The LED chip array can emit light of greater than 800 lumens with a drive current of less than 150 milli-Amps. The LED chip component can also operate at temperatures less than 3000 degrees K. In one embodiment, the LED array is in a substantially circular pattern on the submount. | 02-26-2009 |
| 20090021180 | Led with integrated constant current driver - An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circuitry typically contains a power converter and a constant current circuit. The LED package may also contain other active or passive components such as pin-outs for integrated or external components, a transformer and rectifier, or a rectifier circuit. External components can include control systems for regulating the LED current level or the properties of light emitted by the LED. Integrating the power supply and current control components into the LED can provide for fabrication of relatively small LEDs using fewer and less device-specific components. | 01-22-2009 |
| 20080303033 | FORMATION OF NITRIDE-BASED OPTOELECTRONIC AND ELECTRONIC DEVICE STRUCTURES ON LATTICE-MATCHED SUBSTRATES - A method of forming an AlInGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AlInGaN alloy-based electronic or optoelectronic device structure formed on a nitride substrate is freed from the substrate on which it was grown. | 12-11-2008 |
| 20080302298 | Highly Uniform Group III Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates - A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent. | 12-11-2008 |
| 20080283861 | Power light emitting die package with reflecting lens and the method of making the same - A light emitting die package and a method of manufacturing the die package are disclosed. The die package includes a leadframe, at least one light emitting device (LED), a molded body, and a lens. The leadframe includes a plurality of leads and has a top side and a bottom side. A portion of the leadframe defines a mounting pad. The LED device is mounted on the mounting pad. The molded body is integrated with portions of the leadframe and defines an opening on the top side of the leadframe, the opening surrounding the mounting pad. The molded body further includes latches on the bottom side of the leadframe. The lens is coupled to the molded body. A composite lens is used as both reflector and imaging tool to collect and direct light emitted by LED(s) for desired spectral and luminous performance. | 11-20-2008 |
| 20080265379 | Laser Diode Orientation on Mis-Cut Substrates - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate ( | 10-30-2008 |
| 20080258628 | Light Emitting Diode Emergency Lighting Methods and Apparatus - An LED based emergency lighting system is described. Unlike a typical approach in which one lighting system provides normal ambient lighting and a second different system provides auxiliary emergency lighting, a common integrated system can be satisfactorily employed. | 10-23-2008 |
| 20080257262 | Susceptor Designs for Silicon Carbide Thin Films - A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor includes a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface. | 10-23-2008 |
| 20080237609 | Low Micropipe 100 mm Silicon Carbide Wafer - A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm | 10-02-2008 |
| 20080224598 | SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME - A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix. | 09-18-2008 |
| 20080224597 | SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME - A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix. | 09-18-2008 |
| 20080199649 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 08-21-2008 |
| 20080197360 | Diode Having Reduced On-resistance and Associated Method of Manufacture - A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide. | 08-21-2008 |
