Commissariat L'Energie Atomique Et Aux Energies Alternatives Patent applications |
Patent application number | Title | Published |
20120153394 | METHOD FOR MANUFACTURING A STRAINED CHANNEL MOS TRANSISTOR - A method for manufacturing a strained channel MOS transistor including the steps of: forming, at the surface of a semiconductor substrate, a MOS transistor comprising source and drain regions and an insulated sacrificial gate which partly extends over insulation areas surrounding the transistor; forming a layer of a dielectric material having its upper surface level with the upper surface of the sacrificial gate; removing the sacrificial gate; etching at least an upper portion of the exposed insulation areas to form trenches therein; filling the trenches with a material capable of applying a strain to the substrate; and forming, in the space left free by the sacrificial gate, an insulated MOS transistor gate. | 06-21-2012 |
20120120622 | AIRTIGHT ASSEMBLY OF TWO COMPONENTS AND METHOD FOR PRODUCING SUCH AN ASSEMBLY - An airtight assembly of two components including a first component with a support having at its surface: at least one spacer composed of a ductile material, arranged at the periphery of the component, and at least one bead composed of a ductile material; a second component with a support having at its surface: at least one insert inserted over the whole or part of its surface in the spacer on the first component, and at least one bead insert inserted over all or part of the surface thereof in the bead on the first component, defining an airtight central cavity. | 05-17-2012 |