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Commissariat á I'énergie atomique et aux énergies alternatives

Commissariat á I'énergie atomique et aux énergies alternatives Patent applications
Patent application numberTitlePublished
20110093990METHOD AND STRUCTURE FOR CHARACTERISING AN ATOMIC FORCE MICROSCOPY TIP - A method for characterising an atomic force microscopy tip using a characterisation structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterisation structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.04-21-2011
20100289015ORGANIC FIELD-EFFECT TRANSISTOR - An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage V11-18-2010