| Chi Mei Lighting Technology Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20120056152 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other. | 03-08-2012 |
| 20120037946 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact. | 02-16-2012 |
| 20110073894 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer. | 03-31-2011 |
