| CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120112987 | ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY - An embodiment of the disclosed technology provides an array substrate, comprising a base substrate, and data lines and gate lines crossed with each other to define a plurality of pixel units on the base substrate, wherein each pixel unit comprises two sub-pixel units, and the data line for the pixel unit is formed between the two sub-pixel units, and each of the two the sub-pixel units comprises a pixel electrode and a thin film transistor (TFT), which comprises a gate electrode, a source electrode, a drain electrode and an active layer. | 05-10-2012 |
| 20120105397 | SHIFT REGISTER UNIT, GATE DRIVING DEVICE AND LIQUID CRYSTAL DISPLAY - The present invention provides a shift register unit, a gate driving device and a liquid crystal display, wherein the shift register unit includes five thin film transistors. The drain of a first thin film transistor is connected to a first clock signal input terminal; the drain of a third thin film transistor is connected to the first clock signal input terminal, the gate thereof is connected to the gate of the first thin film transistor, and the source thereof is connected to a second signal output terminal. The shift register unit, the gate driving device and the liquid crystal display provided by the present invention separate the gate driving signal and the control signal for controlling the next neighboring shift register unit from each other, which can solve the problem that the accuracy of the gate driving signal is low due to the delay accumulation. | 05-03-2012 |
| 20120105393 | SHIFT REGISTER UNIT, GATE DRIVING DEVICE AND LIQUID CRYSTAL DISPLAY - The present invention provides a shift register unit, a gate driving device and a liquid crystal display, wherein the shift register unit includes a first thin film transistor, a second thin film transistor, a third thin film transistor and a fourth thin film transistor, and further includes a pull-down unit and a driving unit. Since the shift register unit includes the pull-down unit and the driving unit, it is possible to assure that the output gate driving signal keeps at a low level stably when the shift register unit needs to output a low level, and the pull-down unit operates under the driving of an alternating current signal, which can prevent the threshold voltage of the thin film transistor of the pull-down unit from offsetting largely. | 05-03-2012 |
| 20120100471 | METHOD OF MANUFACTURING COLOR FILTER SUBSTRATE - An embodiment of the present invention provides a method of manufacturing a color filter substrate, comprising: forming a black matrix on a base substrate; and forming color filter patterns having at least two colors on the base substrate on which the black matrix is formed, wherein forming a color filter pattern having one color of the at least two colors, comprising: forming a color filter resin layer having the one color on the base substrate on which the black matrix is formed; radiating the color filter resin layer from a side of the base substrate which is opposite to a side on which the black matrix is formed by using a mask to expose the color filter resin layer so as to form the color filter pattern, wherein light transmitting regions of the mask at least correspond to the color filter pattern to be formed. | 04-26-2012 |
| 20120086013 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided. | 04-12-2012 |
| 20120075244 | TOUCH SCREEN AND ADDRESSING METHOD THEREOF - The disclosed technology provides a touch screen, comprising a touch screen body, comprising a plurality of first channels extending in first direction and a plurality of second channels extending in second direction; and an interface device provided with a plurality of I/O ports, wherein at least two first channels of the touch screen body spaced apart with first predetermined distance are connected electrically to a parallel connection node so as to form a first channel group, and the parallel connection node is connected electrically to one I/O port, and wherein the first predetermined distance is a predetermined length of a touching region in the first direction. An addressing method for the touch screen is also provided. | 03-29-2012 |
| 20120069286 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY - The disclosed technology relates to an array substrate and a method of manufacturing the same, and a liquid crystal display. The array substrate comprises a base substrate. The base substrate comprises a pixel region and a peripheral region; data lines and gate lines are formed to transversely and longitudinally cross each other on the base substrate to form a plurality of pixel units, and each of the pixel units comprises a switching element, a pixel electrode and a common electrode above the pixel electrode; the common electrode has slits in each pixel unit and is a plate-shaped electrode in the pixel region, when powered on, the common electrode forms a horizontal electric field together with the pixel electrode of the pixel unit; and a common electrode line formed in the pixel region and connected with the common electrode. | 03-22-2012 |
| 20110284861 | LOW-TEMPERATURE POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME, TRANSISTOR, AND DISPLAY APPARATUS - A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphous silicon thin film; forming a second amorphous silicon thin film to cover the first amorphous silicon thin film and the catalyst particles; and performing a crystallization of the first and second amorphous silicon thin films by using the catalyst particles so as to form the low-temperature polysilicon thin film. | 11-24-2011 |
