| CENTROTHERM SITEC GMBH Patent applications |
| Patent application number | Title | Published |
|---|
| 20120027916 | ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR - An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis. | 02-02-2012 |
| 20110285364 | PHASE-FIRED CONTROL ARRANGEMENT AND METHOD - A method and arrangement for phase-fired control is provided, in which all controllable electric switching elements are linked by a common controller that has a first input for a first control signal. A set point value is pre-defined as a first input variable and assigned to a device for controlling the controllable electric switching elements. Current flowing through each switching element is measured and transmitted to the device for controlling the switching elements as a respective second input variable. The current value of the voltage in the load is measured and transmitted to the device for controlling the switching elements as a third input variable. The device for controlling the switching elements controls all switching elements in a targeted manner by use of the first, second and third input variables. A maximum of two switching elements are active at any one time. | 11-24-2011 |
| 20110200511 | PROCESS FOR THE HYDROGENATION OF CHLOROSILANES AND CONVERTER FOR CARRYING OUT THE PROCESS - In a process for the hydrogenation of chlorosilanes, a gas mixture of a chlorosilane gas to be hydrogenated and hydrogen gas is heated in a reactor to temperatures in the range between 500° C. and 1800° C. The chlorosilane gas is thereby at least partially hydrogenated. The reactor is heated by way of at least one flame from a fire box surrounding the reactor for the purpose of heating the gas mixture. | 08-18-2011 |
| 20100290973 | METHOD AND DEVICE FOR PROVIDING LIQUID SILICON - A method for providing liquid silicon comprising the method steps of filling ( | 11-18-2010 |
| 20090311161 | METHOD AND CONFIGURATION FOR MELTING SILICON - A process for melting silicon, in which silicon bodies ( | 12-17-2009 |
