| CENTROTHERM PHOTOVOLTAICS AG Patent applications |
| Patent application number | Title | Published |
|---|
| 20110214727 | METHOD FOR MANUFACTURING A SOLAR CELL WITH A TWO-STAGE DOPING - A method for manufacturing a solar cell via a two-stage doping includes the steps of forming an oxide layer, which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate, forming an opening in the oxide layer in at least one high-doping region by removing the oxide layer in this high-doping region and diffusing the first dopant into the at least one high-doping region of the solar cell substrate through the opening. The first dopant is diffused into the solar cell substrate through the oxide layer. The diffusing-in through the openings and through the oxide layer takes place at the same time in a common diffusion step and the solar cell substrate is diffused in the common diffusion step in an at least partially hydrophilic state. | 09-08-2011 |
| 20110017283 | METHOD AND APPARATUS FOR DEPOSITION OF A LAYER OF AN INDIUM CHALCOGENIDE ONTO A SUBSTRATE - A method deposits a layer of an indium chalcogenide onto a substrate. The method includes the steps of: providing an indium source in a reaction zone, providing a gaseous source of a chalcogen in the reaction zone, and heating the substrate. Thereby in the reaction zone, at a pressure of approximately atmospheric ambient pressure, the indium originating from the indium source and the chalcogen originating from the source of a chalcogen are converted to an indium chalcogenide being deposited onto the surface of the substrate. | 01-27-2011 |
| 20100203668 | METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE - An accelerated and simple-to-realize fast method for thermally converting metallic precursor layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency are provided. The substrates previously prepared at least with a metallic precursor layer are heated in a furnace, which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to an end temperature between 400° C. and 600° C. and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens. | 08-12-2010 |
| 20100151129 | METHOD AND ARRANGEMENT FOR PROVIDING CHALCOGENS - A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed. | 06-17-2010 |
| 20090133628 | VACUUM DEVICE FOR CONTINUOUS PROCESSING OF SUBSTRATES - A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection. | 05-28-2009 |
| 20090120286 | METHOD AND APPARATUS FOR DEPOSITING CHALCOGENS - A method and device for separation of chalcogens from waste gases in process installations are provided so that complete and reliable removal of chalcogens occurs continuously during nonstop operation of the process installation in the most effective manner possible. The process installation is connected via a pipeline to an input connector of the device for separation of chalcogens arranged outside of the process installation. The pipeline and the input connector have a heat connection to the process chamber. The device for separation of chalcogens is provided with an outlet connector as well as a gas outlet is equipped with a cooling device so that the input connector is excluded from cooling. | 05-14-2009 |
| 20090071535 | ANTIREFLECTIVE COATING ON SOLAR CELLS AND METHOD FOR THE PRODUCTION OF SUCH AN ANTIREFLECTIVE COATING - Disclosed is an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. The antireflective coating is composed of successive partial layers, i.e., a lower partial layer which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer having an increased barrier effect against hydrogen diffusion. | 03-19-2009 |
| 20080314288 | Mixture For Doping Semiconductors - A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also provided are a method for producing such a doping mixture and the use thereof. | 12-25-2008 |
| 20080292430 | DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIAL AT LOW PRESSURE - A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by means of a collar, which is attached to the process tube and against which a door rests sealingly. | 11-27-2008 |
