CAVENDISH KINETICS INC.
|CAVENDISH KINETICS INC. Patent applications|
|Patent application number||Title||Published|
|20140340814||MEMS VARIABLE CAPACITOR WITH ENHANCED RF PERFORMANCE - In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.||11-20-2014|
|20140339688||TECHNIQUES FOR THE CANCELLATION OF CHIP SCALE PACKAGING PARASITIC LOSSES - The present invention generally relates to techniques and structures that cancel or mitigate RF coupling from the RF circuit to the silicon die. To cancel or mitigate the RF coupling, a conductive coating may be formed over the RF-MEMS device. The conductive coating may be coupled to the die. Alternatively, the conductive coating may be coupled to the die through the RF-MEMS by having a through silicon via. Another manner for cancelling or mitigating RF coupling is to have no conductive traces located on the front side of the PCB.||11-20-2014|
|20140300404||RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS - The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.||10-09-2014|
|20140300249||MEMS DEVICE ANCHORING - Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.||10-09-2014|
|20140238828||MERGED LEGS AND SEMI-FLEXIBLE ANCHORING FOR MEMS DEVICE - The present invention generally relates to a MEMS device having a plurality of cantilevers that are coupled together in an anchor region and/or by legs that are coupled in a center area of the cantilever. The legs ensure that each cantilever can move/release from above the RF electrode at the same voltage. The anchor region coupling matches the mechanical stiffness in all sections of the cantilever so that all of the cantilevers move together.||08-28-2014|
|20140218839||ROUTING OF MEMS VARIABLE CAPACITORS FOR RF APPLICATIONS - The present invention generally relates to a variable capacitor for RF and microwave applications. The variable capacitor includes a bond pad that has a plurality of cells electrically coupled thereto. Each of the plurality of cells has a plurality of MEMS devices therein. The MEMS devices share a common RF electrode, one or more ground electrodes and one or more control electrodes. The RF electrode, ground electrodes and control electrodes are all arranged parallel to each other within the cells. The RF electrode is electrically connected to the one or more bond pads using a different level of electrical routing metal.||08-07-2014|
|20140036345||FABRICATION OF A FLOATING ROCKER MEMS DEVICE FOR LIGHT MODULATION - The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.||02-06-2014|
|20130335878||MEMS LIFETIME ENHANCEMENT - The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.||12-19-2013|
|20130032453||ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR - The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.||02-07-2013|
|20090273971||CONTINUOUSLY DRIVING NON-VOLATILE MEMORY ELEMENT - Embodiments discussed herein generally relate to utilizing non-volatile memory elements to continuously drive other circuitry. There are many advantages to utilizing non-volatile memory to continuously drive other circuitry. For example, back end of the line (BEOL) compatible process may be used to fabricate the non-volatile memory elements that does not affect any front end of the line (FEOL) devices. This allows for an earlier integration of non-volatile technology into the latest state-of-the-art semiconductor process nodes. This is specifically important for FPGA and CPLDs, which make use of the latest process nodes.||11-05-2009|
|20090273962||FOUR-TERMINAL MULTIPLE-TIME PROGRAMMABLE MEMORY BITCELL AND ARRAY ARCHITECTURE - Embodiments disclosed herein relate to a non-volatile memory bitcell and arrays thereof, methods of detecting whether the bitcell is in a programmed state, methods of detecting whether the bitcell is in an erased state, methods of setting the bitcell in a programmed state and methods of setting the bitcell in an erased state. The non-volatile memory bitcell may be a four terminal bitcell. The bitcell may have a pull-up electrode, a pull-down electrode, a cantilever electrode and a contact electrode. An NMOS transistor may be coupled to the contact electrode. Depending upon the orientation of the word line, the current through the bitcell may be measured on the bitline, the data line or the pull-down electrode.||11-05-2009|
Patent applications by CAVENDISH KINETICS INC.