| Carben Semicon Limited Patent applications |
| Patent application number | Title | Published |
|---|
| 20120122274 | ANISOTROPIC SEMICONDUCTOR FILM AND METHOD OF PRODUCTION THEREOF - The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm. | 05-17-2012 |
| 20100224998 | Integrated Circuit with Ribtan Interconnects - An integrated circuit (IC) includes an interconnect system made of electrically conducting ribtan material. The integrated circuit includes a substrate, a set of circuit elements that are formed on the substrate, an interconnect system that interconnects the circuit elements. At least part of the interconnect system is made of a metallic ribtan material. | 09-09-2010 |
| 20100173134 | Film and Device Using Layer Based on Ribtan Material - The present invention relates generally to the field of electronics. More specifically, the present invention relates to film and device using layer based on carbon-based ribtan material. According to present invention, the film comprises at least one optically transparent and electrically conductive layer based on a ribtan material. | 07-08-2010 |
| 20100038629 | Anisotropic Semiconductor Film and Method of Production Thereof - The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm. | 02-18-2010 |
