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Capres A/S

Capres A/S Patent applications
Patent application numberTitlePublished
20110320144METHOD FOR SHEET RESISTANCE AND LEAKAGE CURRENT DENSITY MEASUREMENTS ON SHALLOW SEMICONDUCTOR IMPLANTS - A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor surface (12-29-2011
20090009200Method for Providing Alignment of a Probe - A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.01-08-2009