| CANON ANELVA CORPORATION Patent applications |
| Patent application number | Title | Published |
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| 20120118733 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus includes a process chamber, a substrate conveyer provided in the process chamber to convey a substrate, a target holder provided in the process chamber to hold a flat target, a magnet unit arranged on a back side of the target holder, an electric power supply configured to supply power to the target holder, a controller configured to control the electric power supply and the substrate conveyer, and a target holder moving unit configured to move the target holder in a plane substantially parallel to a surface of the target holder, wherein the controller is configured to drive the substrate conveyer to convey the substrate and to drive the target holder moving unit to move the target holder while causing the electric power supply to supply power to the target holder. | 05-17-2012 |
| 20120107072 | SUBSTRATE TRANSPORT APPARATUS, ELECTRONIC DEVICE MANUFACTURING SYSTEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate transport apparatus comprises a substrate holder capable of holding a substrate, a link unit which extends/retracts the substrate holder, a driving unit which generates a driving force to operate the link unit, a guide bar provided to one of the substrate holder and the link unit; and a support unit which is provided to the other of the substrate holder and the link unit, and slidably supports the guide bar when the substrate holder moves by the operation of the link unit. | 05-03-2012 |
| 20120104274 | ION BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses | 05-03-2012 |
| 20120103934 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - The present invention aims to prevent decreases in etching rate due to adhesion of an etched film to a substrate holder. | 05-03-2012 |
| 20120097847 | ION DETECTOR FOR MASS SPECTROMETRY, METHOD FOR DETECTING ION, AND METHOD FOR MANUFACTURING ION DETECTOR - The present disclosure provides an ion detector for improving the effect of electric field for pulling in an ion to be detected to a first-stage electrode of a secondary electron multiplier (SEM), and improving the effect of a stray light reduction. In one example embodiment, an ion detector includes a SEM, and a lead-in electrode for pulling in an ion to a first-stage electrode side of the SEM. At least one of the area of the lead-in electrode and a potential difference between the lead-in electrode and neighboring electrodes of the lead-in electrode, the neighboring electrode being an electrode not of the SEM, is set so that the light amount of internal-stray light generated inside the detector entering the first-stage electrode is not more than that of external-stray light generated outside the detector entering the first-stage electrode, when an ion is introduced into the detector. | 04-26-2012 |
| 20120097533 | DOUBLE-LAYER SHUTTER SPUTTERING APPARATUS - A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets. | 04-26-2012 |
| 20120089243 | IDENTIFICATION INFORMATION SETTING DEVICE AND IDENTIFICATION INFORMATION SETTING METHOD - The present invention provides an identification information setting device and an identification information setting method that can easily set identification information for a transfer chamber. In an embodiment of the present invention, a storage portion ( | 04-12-2012 |
| 20120080630 | FLOW PATH OPENING/CLOSING APPARATUS - There is provided a flow path opening/closing apparatus that can enhance airtightness so as to be capable of being used for a high-speed processing under a high pressure, while keeping advantages, which are a non-contact valve element, high exhausting capability, and high response speed. A butterfly valve includes a body having a flow path through which a fluid flows; and a valve element that can rotate in the flow path about a rotation axis vertical to the flow path, wherein a seal length extending wall for extending a seal length in a direction of the flow path at a gap, which is formed between the body and the valve element when the valve element is fully closed, is formed to project along an edge of the valve element. | 04-05-2012 |
| 20120073960 | MAGNETRON SPUTTERING APPARATUS AND ELECTRONIC COMPONENT MANUFACTURING METHOD - A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target. | 03-29-2012 |
| 20120070968 | SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING CRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE - The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate ( | 03-22-2012 |
| 20120070693 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane. | 03-22-2012 |
| 20120045591 | PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE - A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder. | 02-23-2012 |
| 20120043617 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. | 02-23-2012 |
| 20120031748 | FILM FORMING APPARATUS AND FILM FORMING METHOD - The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means. | 02-09-2012 |
| 20120024075 | CAPACITANCE PRESSURE SENSOR - The present invention provides a capacitance pressure sensor having a traces structure which can stably measure a pressure. A capacitance pressure sensor according to an embodiment of the present invention includes: a substrate having a first insulation layer to a third insulation layer; a diaphragm placed to face the substrate so that a reference chamber is formed between the diaphragm and the substrate; a first electrode on the substrate 1, facing to the diaphragm; a second electrode on the diaphragm, which is disposed so as to face the first electrode; a trace connected to the first electrode, for electrically connecting the first electrode to the outside; and a second trace connected to the second electrode, for electrically connecting the second electrode to the outside. The traces penetrate the first insulation layer from the reference chamber side of the substrate toward the side opposing to the reference chamber of the substrate, and also are bent between each of the insulation layers. | 02-02-2012 |
| 20120014770 | SUBSTRATE CONVEYANCE APPARATUS, ELECTRONIC DEVICE MANUFACTURING SYSTEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate conveyance apparatus includes a first driving shaft, an arm portion having one end connected to the first driving shaft, a substrate holding unit capable of holding a substrate, and a connecting portion that connects the other end of the arm portion and the substrate holding unit. The connecting portion includes a rotating support portion that supports the substrate holding unit rotatably with respect to the arm portion, and a moving unit that moves the substrate holding unit upward or downward with respect to the arm portion in the direction of the rotating shaft about which the substrate holding unit is rotated by the rotating support portion. | 01-19-2012 |
| 20120006675 | FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder ( | 01-12-2012 |
| 20120006257 | SUBSTRATE HOLDER STOCKER DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE HOLDER MOVING METHOD USING THE SUBSTRATE HOLDER STOCKER DEVICE - A substrate holder stocker device capable of reducing foot print is provided. The device includes: a movable table A which holds a plurality of substrate holders side by side in a plate thickness direction thereof and moves back and forth; a movable table B which is provided parallel to the movable table A and holds a plurality of the substrate holders side by side in a plate thickness direction thereof, and which moves back and forth; and an inter-table transfer mechanism for allowing the substrate holder which is held by one of the movable tables A and B stopped at predetermined positions to be held by the other of the movable tables A and B. | 01-12-2012 |
| 20110318848 | FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER - MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier, which is prepared by the metallic Mg deposition followed by the oxidation process or reactive sputtering, is amorphous or microcrystalline with poor (001) out-of-plane texture. In the present invention at least only the ferromagnetic reference layer or both of the ferromagnetic reference and free layer is proposed to be bi-layer structure having a crystalline preferred grain growth promotion (PGGP) seed layer adjacent to the tunnel barrier. This crystalline PGGP seed layer induces the crystallization and the preferred grain growth of the MgO tunnel barrier upon post-deposition annealing. | 12-29-2011 |
| 20110315346 | COOLING APPARATUS AND HEATING APPARATUS - The present invention provides a cooling apparatus capable of improving a cooling efficiency and realizing a high speed cooling process. The present invention also provides a heating apparatus capable of improving a heating efficiency of a substrate and heating the substrate at high speed. A cooling apparatus according to one embodiment of the present invention includes a chamber; a substrate carrier for holding a substrate | 12-29-2011 |
| 20110313562 | DATA COLLECTION SYSTEM FOR VACUUM PROCESSING APPARATUS - A control device of a transfer module and a process module in a vacuum processing apparatus collects state data from the modules. The control device has a state data set including data on the entire module, updates its own state data in the set of its own state data acquired at acquisition timing and transmits it to a data collection device at transmission timing. A plurality of control devices is connected in a loop or in a chain to the data collection device; a data transmission interval is shorter than a data collection interval, and entire transmission synchronization is set to be less than twice an interval of acquisition timing. | 12-22-2011 |
| 20110312179 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The present invention provides a substrate processing method and a substrate processing apparatus, which are capable of forming a high-k dielectric film with few trapping levels due to oxygen deficiencies and hot carriers by a sputtering method in one and the same vacuum vessel. The substrate processing method according to a first embodiment of the present invention includes: a first step of heating a to-be-processed substrate ( | 12-22-2011 |
| 20110312178 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY ELEMENT AND SPUTTERING APPARATUS - The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer ( | 12-22-2011 |
| 20110309050 | PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD AND METHOD OF MANUFACTURING ELEMENT INCLUDING SUBSTRATE TO BE PROCESSED - The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel ( | 12-22-2011 |
| 20110308544 | CLEANING METHOD OF PROCESSING CHAMBER OF MAGNETIC FILM, MANUFACTURING METHOD OF MAGNETIC DEVICE, AND SUBSTRATE TREATMENT APPARATUS - The present invention provides a manufacturing method of a multilayer film, a manufacturing method of a magnetoresistance effect device, and a substrate treatment apparatus, capable of shortening the time of a cleaning step. In one embodiment of the present invention, the inside of an etching apparatus is cleaned by plasma of a mixed gas containing H | 12-22-2011 |
| 20110303527 | SUBSTRATE PROCESSING APPARATUS AND APPARATUS AND METHOD OF MANUFACTURING MAGNETIC DEVICE - According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber. | 12-15-2011 |
| 20110297537 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member. | 12-08-2011 |
| 20110290638 | SPUTTER DEVICE AND METHOD OF MANUFACTURING MAGNETIC STORAGE MEDIUM - The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate ( | 12-01-2011 |
| 20110287177 | VACUUM PROCESSING APPARATUS, SUBSTRATE ROTATION APPARATUS, AND DEPOSITION METHOD - An apparatus for rotating a substrate having a center hole, comprises a pickup member configured to hold the substrate by holding an edge of the center hole, and a driving unit configured to drive the pickup member, wherein the driving unit is configured to insert the pickup member into the center hole so as not to bring the pickup member into contact with the substrate, to drive the pickup member upward so that the pickup member holds the edge of the center hole from below, and thereupon to rotate the pickup member so as to rotate the substrate, and in rotating the substrate, the driving unit rotates the pickup member about a rotation axis which is perpendicular to a principal surface of the substrate and passes through the center of the substrate. | 11-24-2011 |
| 20110286826 | SUBSTRATE SUPPORT APPARATUS AND VACUUM PROCESSING APPARATUS - A substrate support apparatus which can support a substrate having a center hole, comprises a support portion which can support the substrate. The support portion includes a support groove with a cross-sectional shape in which a groove width gradually increases in a counter-gravitational direction, and a width of the support groove between two end portions is larger than a width of the support groove at the center thereof. | 11-24-2011 |
| 20110284497 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - A plasma processing apparatus includes a discharge window made of a dielectric material, a discharge chamber which is grounded and includes an opening formed at its one end and the discharge window provided at its other end facing the opening, a gas supply system which supplies a gas into the discharge chamber, a high-frequency power application mechanism which applies a high-frequency power to the gas to generate a plasma inside the discharge chamber, a substrate holder which can hold a substrate while facing the discharge window on the outer side of the discharge chamber, a shielding member which partially shields the plasma that impinges on the substrate, and a supporting member which supports the shielding member. The supporting member is grounded and fixed on the shielding member at a position which is farther from the substrate than the shielding member and different from that of the discharge window. | 11-24-2011 |
| 20110279127 | COLD CATHODE IONIZATION VACUUM GAUGE, VACUUM PROCESSING APPARATUS HAVING THE SAME, DISCHARGE STARTING AUXILIARY ELECTRODE USED FOR THE SAME, AND METHOD OF MEASURING PRESSURE USING THE SAME - The present invention provides a cold cathode ionization vacuum gauge that can trigger discharge in a short time even after a long period of operation. The cold cathode ionization vacuum gauge of an embodiment of the present invention includes an anode, a cathode disposed so as to form a discharge space together with the anode, and a discharge starting auxiliary electrode disposed in the discharge space and electrically connected to the cathode. The discharge starting auxiliary electrode has an electrode part disposed in parallel with an axially longitudinal direction of the anode. | 11-17-2011 |
| 20110272278 | SPUTTERING APPARATUS - The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source. | 11-10-2011 |
| 20110266139 | FILM FORMING APPARATUS AND METHOD OF PRODUCING SUBSTRATE USING SAME - The present invention provides a film forming apparatus that forms a film on a substrate (s) | 11-03-2011 |
| 20110262634 | METHOD OF MANUFACTURING MAGNETORESISTIVE DEVICE AND APPARATUS FOR MANUFACTURING THE SAME - A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device. | 10-27-2011 |
| 20110259733 | MAGNETIC FIELD CONTROL FOR UNIFORM FILM THICKNESS DISTRIBUTION IN SPUTTER APPARATUS - When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape. | 10-27-2011 |
| 20110256642 | MANUFACTURING METHOD OF MAGNETO-RESISTANCE EFFECT ELEMENT - The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150° C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure. | 10-20-2011 |
| 20110253953 | RACK AND PINION MECHANISM, VACUUM PROCESSING APPARATUS, METHOD OF DRIVING AND CONTROLLING RACK AND PINION MECHANISM, DRIVE CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention provides a rack and pinion mechanism which avoids collision between respective tooth tops of a rack gear and a pinion gear due to a phase shift between the rack gear and the pinion gear with a simple mechanism and meshes the rack gear and the pinion gear smoothly. | 10-20-2011 |
| 20110253048 | WAFER HOLDER AND METHOD OF HOLDING A WAFER - A wafer holder including a wafer stage and a wafer stage outer-ring surrounding the wafer stage wherein the wafer stage has a diameter smaller than the diameter of a wafer loaded on the wafer stage, the wafer stage outer-ring has an inner diameter at the upper side of the outer-ring which is larger than the diameter of the wafer loaded on the wafer stage, and the upper surface of the outer-ring lies above the upper surface of the wafer loaded on the wafer stage. | 10-20-2011 |
| 20110253037 | VACUUM HEATING AND COOLING APPARATUS - The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber. | 10-20-2011 |
| 20110227018 | MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art and a method of manufacturing the same. | 09-22-2011 |
| 20110223346 | SPUTTERING DEVICE AND SPUTTERING METHOD - A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate ( | 09-15-2011 |
| 20110217467 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device. | 09-08-2011 |
| 20110210405 | METAL NITRIDE FILM, SEMICONDUCTOR DEVICE USING THE METAL NITRIDE FILM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less. | 09-01-2011 |
| 20110209986 | SPUTTERING APPARATUS, SPUTTERING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit. | 09-01-2011 |
| 20110209554 | COMBINED TYPE PRESSURE GAUGE, AND MANUFACTURING METHOD OF COMBINED TYPE PRESSURE GAUGE - The present invention allows manufacturing of a capacitive diaphragm pressure gauge and a Pirani pressure gauge on a single silicon substrate, which makes it possible to reduce the manufacturing cost by the miniaturization of products and mass production. According to an embodiment of the present invention, the manufacturing method of a combined type pressure gauge is a manufacturing method of a combined type pressure gauge including a capacitive diaphragm pressure gauge and a Pirani pressure gauge, the method including a groove-forming step of forming a first groove portion and a second groove portion on a first surface side of a silicon substrate by etching, and a bonding step to bond a glass substrate to the silicon substrate so as to cover the first groove portion and the second groove portion on the first surface side of the silicon substrate. | 09-01-2011 |
| 20110203734 | PLASMA PROCESSING APPARATUS, MAGNETORESISTIVE DEVICE MANUFACTURING APPARATUS, MAGNETIC THIN FILM FORMING METHOD, AND FILM FORMATION CONTROL PROGRAM - The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. | 08-25-2011 |
| 20110198033 | SHUTTER DEVICE AND VACUUM PROCESSING APPARATUS - A shutter device having two shutter plates, which shield between an IBS and a substrate, is configured such that the two shutter plates are disposed at symmetrical positions across the IBS and can perform an opening/closing operation in synchronization with a rotation of a rotation-link-member which is rotatably disposed surrounding the IBS. With the configuration, the shutter device can reduce an offset of a shield range in the opening/closing operation. | 08-18-2011 |
| 20110180401 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target. | 07-28-2011 |
| 20110174221 | Surface processing apparatus - This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced. | 07-21-2011 |
| 20110168545 | MULTILAYER-FILM SPUTTERING APPARATUS AND METHOD OF FORMING MULTILAYER FILM - Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit ( | 07-14-2011 |
| 20110168086 | SUBSTRATE HOLDER MOUNTING DEVICE AND SUBSTRATE HOLDER CONTAINER CHAMBER - A substrate holder mounting device is provided that is compact and has a simple structure. The substrate holder mounting device according to the present invention is provided with: a first and a second mounting mechanisms ( | 07-14-2011 |
| 20110165775 | THIN FILM FORMING METHOD - According to the present invention, a thin film having a desired thickness is formed on an inner sidewall of a step with excellent step coverage in a film forming step and an etching step at least once, respectively. In an embodiment of the present invention, a target material is deposited on a substrate ( | 07-07-2011 |
| 20110162959 | VACUUM PUMPING SYSTEM, SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND OPERATING METHOD OF VACUUM PUMPING SYSTEM - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas. | 07-07-2011 |
| 20110156514 | VACUUM ACTUATOR AND SUBSTRATE TRANSPORT ROBOT - A vacuum actuator includes a vacuum partition wall, the interior of which can be evacuated to a vacuum, a rotor supported by the vacuum partition wall to be free to rotate, a permanent magnet provided on the outer peripheral surface of the rotor, a coil opposed to the permanent magnet, and a stator provided with the coil. The stator and the vacuum partition wall are formed integrally with each other. | 06-30-2011 |
| 20110156128 | DIELECTRIC FILM MANUFACTURING METHOD - The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing method according to an embodiment of the present invention is forms a dielectric film of a metal oxide mainly containing Al, Si, and O on a substrate, and comprises steps of forming the metal oxide having an amorphous structure in which a molar fraction between an Al element and a Si element, Si/(Si+Al), is 0| 06-30-2011 | |
| 20110155691 | MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM - The present invention provides a manufacturing method of a magnetic recording medium capable of reducing the deterioration of a recording layer and improving the Duty cycle of the recording layer. An embodiment of the present invention is a manufacturing method of a patterned recording medium such as BPM (Bit Patterned Media) and DTM (Discrete Track Media). The manufacturing method has a deposition step of depositing a resist protective film on a resist pattern formed on a workpiece containing a recording layer, and a recording layer processing step of processing the recording layer into a pattern shape by dry etching using the resist pattern and the resist protective film as a mask. | 06-30-2011 |
| 20110155569 | COOLING SYSTEM - A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed. | 06-30-2011 |
| 20110155561 | REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS - The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. | 06-30-2011 |
| 20110155059 | THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND SHIELD COMPONENT - The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield. | 06-30-2011 |
| 20110155054 | VACUUM PROCESSING APPARATUS - In a vacuum processing apparatus, a substrate chuck mechanism member is attached to a substrate holder provided in a vacuum processing chamber, includes a shaft member, first and second coil springs that are provided at the two ends, respectively, of the shaft member, and a substrate chuck plate provided at the end of the shaft member, and is additionally attached to the substrate holder using the substrate chuck plate by elastic biasing of the first coil spring. The holding state of the substrate on the substrate holder is changed by the expansion/contraction actions of the first and second coil springs in accordance with the reciprocal movement of the substrate holder. | 06-30-2011 |
| 20110147982 | GATE VALVE, FILM MANUFACTURING APPARATUS, AND FILM MANUFACTURING METHOD - A film manufacturing apparatus includes a feed device, a take-up device, and a processing unit to perform a predetermined process for a film. The feed device, the take-up device, and the processing unit are arranged in vacuum chambers having opening portions through which a film can pass. Each opening portion includes a gate valve that can hermitically seal the vacuum chamber by sealing the film while clamping it. A recess portion is formed in the seal member of the valve body of each gate valve. The recess portion has a linear portion that is a size larger than the width of the film in a direction perpendicular to the transport direction of the film and the moving direction of the valve body. | 06-23-2011 |
| 20110147200 | Ion Beam Generator, and Substrate Processing Apparatus and Production Method of Electronic Device Using The Ion Beam Generator - An ion beam generator generates plasma in a discharge tank | 06-23-2011 |
| 20110147199 | SPUTTERING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus comprises a substrate holder, and a screening member configured to screen a substrate mount surface of a surface of the substrate holder. The screening member comprises a first screening member configured to rotate about an axis in a first direction perpendicular to the substrate mount surface and screen at least a first area, and a second screening member configured to rotate about the axis and screen at least a second area. The first and second screening members are configured to be rotated to move between a screening position at which the first screening member screens at least the first area and the second screening member screens at least the second area and a retreat position at which the first and second screening members retract from an area above the substrate mount surface and overlap each other. | 06-23-2011 |
| 20110147198 | VACUUM PUMPING SYSTEM, OPERATING METHOD OF VACUUM PUMPING SYSTEM, REFRIGERATOR, VACUUM PUMP, OPERATING METHOD OF REFRIGERATOR, OPERATION CONTROL METHOD OF TWO-STAGE TYPE REFRIGERATOR, OPERATION CONTROL METHOD OF CRYOPUMP, TWO-STAGE TYPE REFRIGERATOR, CRYOPUMP, SUBSTRATE PROCESSING APPARATUS, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas. | 06-23-2011 |
| 20110143460 | METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art. | 06-16-2011 |
| 20110139998 | ION BEAM GENERATOR - [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. | 06-16-2011 |
| 20110139606 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, SPUTTER DEPOSITION CHAMBER, APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING SPUTTER DEPOSITION CHAMBER, PROGRAM AND STORAGE MEDIUM - The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle. | 06-16-2011 |
| 20110135426 | VACUUM TRANSFER APPARATUS - Disclosed is a vacuum transfer apparatus, which can increase a transfer amount in a vertical direction of a transferred object and can reduce a volume required for placement of the vacuum transfer apparatus, whereby contributing to the size reduction of the vacuum transfer apparatus. | 06-09-2011 |
| 20110124200 | METHOD AND APPARATUS OF PLASMA TREATMENT - The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder ( | 05-26-2011 |
| 20110121927 | MAGNETIC FIELD GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS - A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets ( | 05-26-2011 |
| 20110121317 | ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H | 05-26-2011 |
| 20110120858 | VACUUM PROCESSING APPARATUS AND OPTICAL COMPONENT MANUFACTURING METHOD - To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder. A vacuum processing apparatus which processes a processing object in a vacuum vessel includes a susceptor which has a surface having concavity and convexity, that is opposite to its surface on which the processing object is mounted, and movably holds the processing object, a holder which has a surface having concavity and convexity which mesh with those of the susceptor, a driving mechanism which holds the holder to be movable to a first state or a second state, and a control means for moving the susceptor while the holder is held in the first state to mesh the surface, having the concavity and convexity, of the susceptor with the surface, having the concavity and convexity, of the holder and thereby connect the susceptor and the holder to each other, moving the holder, to which the susceptor is connected, to the second state and processing the processing object, and moving the holder to the first state again and moving the susceptor so that the surface, having the concavity and convexity, of the susceptor is separated from the surface, having the concavity and convexity, of the holder. | 05-26-2011 |
| 20110094875 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME - A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure. | 04-28-2011 |
| 20110089023 | PLASMA PROCESSING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space. | 04-21-2011 |
| 20110086439 | METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT - A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a plasma of an inert gas to etch the metal layer to have a second thickness smaller than the first thickness, and an oxidation step of oxidizing the metal layer having undergone the plasma treatment to form a metal oxide which forms a tunnel barrier. | 04-14-2011 |
| 20110084348 | MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art. | 04-14-2011 |
| 20110081732 | Method of Manufacturing Magnetic Tunnel Junction Device and Apparatus for Manufacturing the Same - A method of manufacturing a magnetic tunnel junction device includes a barrier layer forming step of forming a tunnel barrier layer. The barrier layer forming step comprises a step of depositing a first metal layer, an oxygen surfactant layer forming step of forming an oxygen surfactant layer on the first metal layer, a step of deposing a second metal layer above the first oxygen surfactant layer, and an oxidation step of oxidizing the first metal layer and the second metal layer to form a metal oxide layer. | 04-07-2011 |
| 20110068084 | SUBSTRATE HOLDER AND SUBSTRATE TEMPERATURE CONTROL METHOD - A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system. | 03-24-2011 |
| 20110064880 | VACUUM PROCESSING APPARATUS, VACUUM PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate. | 03-17-2011 |
| 20110064877 | GAS SUPPLY DEVICE, VACUUM PROCESSING APPARATUS AND METHOD OF PRODUCING ELECTRONIC DEVICE - To provide a gas supply device | 03-17-2011 |
| 20110064642 | DIELECTRIC FILM WITH METALLIC OXYNITRIDE - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 03-17-2011 |
| 20110052349 | VACUUM PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD - A robot according to this invention includes a driving mechanism, a first arm rotatably connected to the driving mechanism, a second arm rotatably connected to the first arm, and an X-shaped end effector rotatably disposed at the distal end of the second arm. Of the four distal ends of the end effector, two distal ends include holding units which can hold substrates in one direction, and the remaining two distal ends include holding units which can hold substrates in the opposite direction. | 03-03-2011 |
| 20110051481 | FREQUENCY CONVERTER - The present invention provides a frequency converter including a frequency conversion device capable of accommodating a Si-series MMIC and also a GaAs-series MMIC by using a magneto-resistance element. A frequency converter according to an embodiment of the present invention includes: a frequency conversion device having a magneto-resistance element with a magnetization free layer, an intermediate layer, and a magnetization pinned layer; a magnetic field application mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the above frequency conversion device for receiving an external input signal. Further, the local oscillator includes a magneto-resistance element capable of generating the local oscillation signal by outputting an AC voltage according to a resistance change thereof. | 03-03-2011 |
| 20110051115 | Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus - The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights. | 03-03-2011 |
| 20110042209 | SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF - Disclosed is a sputtering device wherein a target ( | 02-24-2011 |
| 20110041932 | GAS SUPPLY DEVICE AND VACUUM PROCESSING APPARATUS - A gas supply device includes a chamber frame, a door which is attached to the chamber frame to be able to open and close the door, and has a cathode, a door-side introduction block which is attached to the door and has a gas flow path for supplying discharge gas to the cathode, and a chamber-side introduction block which is attached to the chamber frame and has a gas flow path for supplying discharge gas introduced outside from the chamber frame to the door-side introduction block. When the door is closed, the gas flow path of the door-side introduction block and the gas flow path of the chamber-side introduction block communicate with each other. | 02-24-2011 |
| 20110032645 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction. | 02-10-2011 |
| 20110031107 | METHOD OF BURYING METAL AND APPARATUS OF DEPOSITING METAL IN CONCAVE PORTION - The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object. | 02-10-2011 |
| 20110027979 | DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING DIELECTRIC FILM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10 | 02-03-2011 |
| 20110027051 | DRIVING DEVICE AND VACUUM PROCESSING APPARATUS - A magnetic screw driving device | 02-03-2011 |
| 20110021000 | METHOD FOR MANUFACTURING RESISTANCE CHANGE ELEMENT - The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O | 01-27-2011 |
| 20110004334 | Substrate Processing System and Substrate Processing Device - The present invention provides a substrate processing system capable of extending and changing a substrate processing module easily according to changes of processing contents for a substrate. An embodiment of the present invention is the substrate processing system including a main device ( | 01-06-2011 |
| 20100330813 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 12-30-2010 |
| 20100328997 | PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM PROCESSING APPARATUS, AND PHASE-CHANGE MEMORY ELEMENT MANUFACTURING METHOD - A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer. | 12-30-2010 |
| 20100326818 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING APPARATUS - The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening. | 12-30-2010 |
| 20100316890 | MAGNETIC TUNNEL JUNCTION DEVICE WITH MAGNETIC FREE LAYER HAVING SANDWICH STRUCTURE - On the substrate ( | 12-16-2010 |
| 20100310902 | DRY ETCHING METHOD, MAGNETO-RESISTIVE ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaO | 12-09-2010 |
| 20100304504 | PROCESS AND APPARATUS FOR FABRICATING MAGNETIC DEVICE - Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N | 12-02-2010 |
| 20100301869 | COLD CATHODE IONIZATION VACUUM GAUGE, AUXILIARY DISCHARGE STARTING ELECTRODE, AND VACUUM PROCESSING APPARATUS - The present invention provides a cold cathode ionization vacuum gauge, an auxiliary discharge starting electrode plate, and a vacuum processing apparatus which have simple configurations and, even after long-term-use, which allow discharge to be initiated in a short-period of time and also to be performed stably after the start of the discharge. A cold cathode ionization vacuum gauge according to one embodiment of the present invention includes: an anode; a gauge head chamber (cathode) placed in such a manner as to form a discharge space together with the anode; and a protruding configured so that, in voltage-application to the anode and the cathode, an electric field should be concentrated at the protruding portion to a larger extent than an electric field at the gauge head chamber is. The protruding portion is provided inside the discharge space in such a manner that the protruding portion has a floating potential. | 12-02-2010 |
| 20100301008 | PROCESS AND APPARATUS FOR FABRICATING MAGNETIC DEVICE - Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers in the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N | 12-02-2010 |
| 20100294656 | PLASMA PROCESSING APPARATUS - A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode. | 11-25-2010 |
| 20100284121 | ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric board having an upper surface on which a plurality of projections for supporting a substrate on top surfaces and recesses surrounding the projections are formed, an electrode formed inside the dielectric board, and an external power supply which applies a voltage to the electrode. The dielectric board includes a conductor film formed on at least the top surface of each projection, and has a three-dimensional structure which causes the conductor film to generate a Johnson-Rahbeck force between the substrate and conductor film when a voltage is applied to the electrode. | 11-11-2010 |
| 20100276275 | METHOD OF GENERATING FINE METAL PARTICLES, METHOD OF MANUFACTURING METAL-CONTAINING PASTE, AND METHOD OF FORMING THIN METAL FILM INTERCONNECTION - There is provided a method or the like which safely generates fine metal particles at a low cost without using a chlorine gas. Fine copper particles ( | 11-04-2010 |
| 20100273387 | Processing Apparatus and Method of Manufacturing Electron Emission Element and Organic EL Display - Disclosed is a processing apparatus which can realize highly fine batch pattern film formation for a mask, which is significantly increased in weight according to the demand for increasing the size of an object to be processed, whereby leading to a possibility of reduction in the alignment accuracy of a pattern. | 10-28-2010 |
| 20100264959 | FREQUENCY CONVERSION APPARATUS AND FREQUENCY CONVERSION METHOD - To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal. | 10-21-2010 |
| 20100260947 | METHOD AND APPARATUS OF PLASMA TREATMENT - The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder ( | 10-14-2010 |
| 20100259273 | COLD CATHODE IONIZATION VACUUM GAUGE, VACUUM PROCESSING APPARATUS INCLUDING SAME AND DISCHARGE STARTING AUXILIARY ELECTRODE - The present invention provides a cold cathode ionization vacuum gauge that can trigger discharge in a short time even in the case of use over a long period of time without needing a complicated apparatus. It has the structure in which a rod-like anode is located in an internal part of a measuring element container (cathode) having a discharge space with one end thereof which is sealed, and a discharge starting auxiliary electrode is mounted on this anode. The discharge starting auxiliary electrode triggers the discharge in a short time by the formation of a carbon nanotube layer on a discharge starting auxiliary electrode plate. | 10-14-2010 |
| 20100258432 | SPUTTERING APPARATUS, SPUTTER DEPOSITION METHOD, AND ANALYSIS APPARATUS - A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field. | 10-14-2010 |
| 20100247807 | ELECTRON GUN EVAPORATION APPARATUS AND FILM FORMATION METHOD USING THE ELECTRON GUN EVAPORATION APPARATUS - An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position. | 09-30-2010 |
| 20100244192 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 09-30-2010 |
| 20100243884 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - A mass spectrometer includes an ionization chamber ( | 09-30-2010 |
| 20100243618 | TEMPERATURE CONTROL METHOD FOR HEATING APPARATUS - A temperature control method for a heating apparatus including a chamber which can be evacuated and has a conductive portion, a filament which is positioned in the chamber, a first power supply which supplies a current to the filament, a second power supply which applies, to the filament, a voltage for acceleration to the chamber, an ammeter which measures a current of the filament, and a voltmeter which measures the acceleration voltage, the method comprises a first step of evacuating an interior of the chamber; a second step of supplying the filament current from the first power supply to the filament after the first step; a third step of applying the acceleration voltage to the filament after the second step; and a fourth step of controlling the acceleration voltage to keep a surface temperature of the chamber to be lower than a temperature of the filament after the third step while keeping constant the filament current from the first power supply. | 09-30-2010 |
| 20100243438 | SPUTTERING APPARATUS - A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state. The first shield member has at least one annular-shaped, first protruding portion formed on it to extend in the direction of the second shield member. The second shield member has at least one annular-shaped, second protruding portion formed on it to extend in the direction of the first shield member. The first protruding portion and the second protruding portion fit together in a non-contact state at the position up to which the driving unit brings the substrate holder close to the first shield member. | 09-30-2010 |
| 20100239394 | INLINE-TYPE WAFER CONVEYANCE DEVICE - There are comprised a load chamber ( | 09-23-2010 |
| 20100226630 | APPARATUS FOR HEAT-TREATING SUBSTRATE AND SUBSTRATE MANUFACTURING METHOD - In a substrate annealing apparatus, a substrate holder unit including a substrate stage made of carbon with a high emissivity or a material coated with carbon is accommodated in a vacuum chamber to be liftable. Also, a heating unit having a heat radiating surface facing the substrate stage is disposed above the substrate holder unit within the vacuum chamber. The substrate annealing apparatus brings the substrate stage close to the heat radiating surface so that a substrate mounted on the substrate stage can be heated by radiant heat from the heat radiating surface while the heat radiating surface is not in contact with the substrate. The substrate holder unit includes a radiating plate and a reflecting plate made of one of a metal carbide, a metal nitride, and a nickel alloy. | 09-09-2010 |
| 20100224482 | DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber. | 09-09-2010 |
| 20100222919 | SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE SUPPORTING METHOD, CONTROL PROGRAM OF SUBSTRATE SUPPORTING APPARATUS, AND RECORDING MEDIUM - Productivity is improved by ensuring reliability of palette holding and reliability of operations. | 09-02-2010 |
| 20100221895 | SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD - HF-originated radicals generated in a plasma-forming chamber are fed to a treatment chamber via feed holes, while HF gas molecules as the treatment gas are supplied to the treatment chamber from near the radical feed holes to suppress the excitation energy, thereby increasing the selectivity to Si to remove a native oxide film. Even with the dry-treatment, the surface treatment provides good surface flatness equivalent to that obtained by the wet-cleaning which requires high-temperature treatment, and further attains growth of Si single crystal film on the substrate after the surface treatment. The surface of formed Si single crystal film has small quantity of impurities of oxygen, carbon, and the like. After sputtering Hf and the like onto the surface of the grown Si single crystal film, oxidation and nitrification are applied thereto to form a dielectric insulation film such as HfO thereon, thus forming a metal electrode film. All through the above steps, the substrate is not exposed to atmospheric air, thereby suppressing the adsorption of impurities onto the interface, and thus obtaining a C-V curve with small hysteresis. As a result, good device characteristics are obtained in MOS-FET. | 09-02-2010 |
| 20100221885 | METHOD OF MANUFACTURING DIELECTRIC FILM - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 09-02-2010 |
| 20100221089 | SUBSTRATE SUPPORT APPARATUS, SUBSTRATE TRANSPORT APPARATUS, AND ELECTRICAL DEVICE MANUFACTURING METHOD - A substrate support apparatus which inserts a substrate holding portion into a center hole formed in a substrate, and supports the substrate in a vertical orientation by the substrate holding portion, comprises a first connecting plate connected to the substrate holding portion, a second connecting plate which faces the first connecting plate and is connected to a transport robot that transports the substrate to a substrate holder, at least three linear support members configured to connect the first connecting plate to the second connecting plate, and an elastic shock absorbing member inserted between the first connecting plate and the second connecting plate. | 09-02-2010 |
| 20100215460 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 08-26-2010 |
| 20100213048 | MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet | 08-26-2010 |
| 20100213047 | HIGH-FREQUENCY SPUTTERING DEVICE - Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder. | 08-26-2010 |
| 20100206715 | SPUTTERING APPARATUS, DOUBLE ROTARY SHUTTER UNIT, AND SPUTTERING METHOD - Two shutter plates form a double rotary shutter mechanism. A cylindrical second deposition shield is interposed between the first shutter plate disposed on the side of a target and the second shutter plate so as to surround a first opening formed in the first shutter plate. A cylindrical first deposition shield is interposed between a sputtering cathode and the first shutter plate so as to surround the front surface region of the target. This makes it possible to prevent a sputtering substance from passing through the gaps between the first shutter plate and the second shutter plate and between the first shutter plate and the sputtering cathode, and to, in turn, prevent generation of any cross-contamination. | 08-19-2010 |
| 20100206484 | TRAY, TRAY SUPPORT MEMBER, AND VACUUM PROCESSING APPARATUS - A chuck capable of holding a tray capable of holding a substrate in a predetermined position in a vacuum vessel includes a vertically movable frame, and an arm extending from the frame toward the tray and capable of supporting the tray. The arm includes a support portion which abuts against the tray, and a counterbore portion formed on that side of the support portion which faces the frame. This structure can reduce the warpage of the tray. | 08-19-2010 |
| 20100200394 | VACUUM THIN FILM FORMING APPARATUS - In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder. | 08-12-2010 |
| 20100193128 | SURFACE TREATMENT APPARATUS - A surface treatment apparatus generates resonance on a line including an electrode. The surface treatment apparatus has a vacuum container ( | 08-05-2010 |
| 20100189912 | SUBSTRATE HOLDER, DEPOSITION METHOD USING SUBSTRATE HOLDER, HARD DISK MANUFACTURING METHOD, DEPOSITION APPARATUS, AND PROGRAM - A substrate holder for supporting an insulating substrate includes a conductive substrate holder main body having an opening, a first support member formed to protrude inside the opening from the inner periphery of the opening, and including a clamping member which supports one end portion of the insulating substrate, and a second support member including a clamping member which supports the other end portion of the insulating substrate, and is movable so as to protrude inside the opening or retract from inside the opening. | 07-29-2010 |
| 20100189904 | FILM FORMING APPARATUS AND FILM FORMING METHOD USING THE SAME - A film forming apparatus includes a convey mechanism which conveys a substrate, a supply source which supplies a film formation material to form a film on the substrate conveyed by the convey mechanism, a shielding member which is positioned between the convey mechanism and the supply source to define, along a substrate conveying direction, a first area in which the substrate is shielded against supply of the film formation material, a second area which is adjacent to the first area and in which the film formation material is supplied to the substrate, and a third area which is adjacent to the second area and in which the substrate is shielded against supply of the film formation material, a first heating unit, a second heating unit, and a third heating unit which are respectively arranged in the first area, the second area, and the third area so as to heat the substrate conveyed by the convey mechanism and each include a plurality of heaters, a position detector which detects the position of the substrate in the conveying direction, and a controller which controls the first heating unit, the second heating unit, and the third heating unit. The supply source serves as a heat source, and the substrate conveyed by the convey mechanism is heated more strongly by the supply source when being positioned in the second area than when being positioned in the first area and the third area. The controller individually controls actuation of the first heating unit, the second heating unit, and the third heating unit so as to reduce temperature irregularity in the substrate in the conveying direction in accordance with the position of the substrate detected by the position detector. | 07-29-2010 |
| 20100189532 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 07-29-2010 |
| 20100187093 | SPUTTERING TARGET, METHOD OF MANUFACTURING THIN FILM, AND DISPLAY DEVICE - In forming an LaB | 07-29-2010 |
| 20100178528 | TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS - A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided. | 07-15-2010 |
| 20100168909 | Substrate Processing Apparatus - A single-wafer substrate processing apparatus includes a substrate transfer chamber including a substrate transfer robot, a process chamber, connected to the substrate transfer chamber, for processing a substrate, and a plurality of port sets including (i) a load port, connected to the substrate transfer chamber for receiving an unprocessed substrate to be supplied to the substrate transfer robot, and (ii) an unload port connected to the substrate transfer chamber, as a member different from the load port, for receiving a processed substrate to be retrieved by the substrate transfer robot. Each of the plurality of port sets, the load port and the unload port are arranged adjacent to each other. The plurality of port sets is arranged apart from one another and around the substrate transfer chamber, and the load port and the unload port are adapted to be capable of vacuum exhaust and vacuum break independently of each other. A controller selects a port set to transfer a substrate using the substrate transfer robot, from among the plurality of port sets, and the unprocessed substrate is transferred one-by-one to the load port. When the unprocessed substrate is transferred to the load port, the inside of the load port is vacuum-exhausted, and when the processed substrate is transferred to the unload port, the inside of the unload port is vacuum-broken. | 07-01-2010 |
| 20100166980 | INLINE VACUUM PROCESSING APPARATUS, METHOD OF CONTROLLING THE SAME, AND INFORMATION RECORDING MEDIUM MANUFACTURING METHOD - An inline vacuum processing apparatus includes a deposition unit, a process execution unit, a determination unit, and a control unit. The deposition unit causes one deposition chamber of a first deposition chamber and a second deposition chamber to execute a deposition process. The process execution unit causes the other deposition chamber to execute a process necessary for the deposition process. The determination unit measures the number of substrates processed in one deposition chamber and determines whether all substrates included in a first lot have undergone the deposition process. The control unit switches, based on a determination result from the determination unit, a process to be executed in each of the first deposition chamber and the second deposition chamber. | 07-01-2010 |
| 20100166979 | Deposition Apparatus and Substrate Manufacturing Method - A deposition apparatus includes a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller adapted to change a flow rate of the discharge gas, and a control circuit which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting. | 07-01-2010 |
| 20100166947 | SUBSTRATE PROCESSING APPARATUS, DEPOSITION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate processing apparatus includes a heating unit which has a plurality of heaters used to heat a substrate in a first process chamber, a temperature line sensor configured to measure temperatures of the substrate heated by the heating unit while the substrate is conveyed from the first process chamber to a second process chamber, a re-heating unit which has a plurality of heaters used to re-heat the substrate in the second process chamber, and an output control unit which controls an output of the re-heat unit based on the measurement results of the temperature measurement units. | 07-01-2010 |
| 20100155231 | Method and Apparatus for Manufacturing Magnetoresistive Devices - Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching. | 06-24-2010 |
| 20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
| 20100155228 | SPUTTERING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - A sputtering apparatus includes a rotatable rotary member to which a target is attached, connection terminals, and feeding terminals. The connection terminals are arranged on the end portion of the rotary member in a direction along the axis of rotation of the rotary member, and are electrically connected to the target. The feeding terminals supply electric power to the target via the connection terminals. When the rotary member is rotated while the feeding terminals are in contact with the end portion of the rotary member, the electrical connection or insulation state between the feeding terminals and connection terminals is switched. | 06-24-2010 |
| 20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
| 20100151695 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE ANNEALING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage. | 06-17-2010 |
| 20100151119 | VACUUM VESSEL, VACUUM PROCESSING APPARATUS INCLUDING VACUUM VESSEL, VACUUM VESSEL MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A vacuum vessel includes a pair of bending members which are formed by bending metal plates in predetermined shapes and are bonded to each other to form a closed space inside them. The vacuum vessel also includes a sealing member which seals the gap in the bonding portion between the bending members, and a cubic lattice structure which abuts against the inner surfaces of both the bending members and is accommodated in the closed space. The vacuum vessel further includes a magnet unit. The magnet unit fixes the bending members onto the structure and seals the gap in the bonding portion between the bending members by pressing an O-ring serving as a sealing member along the bonding portion. | 06-17-2010 |
| 20100147801 | High-Frequency Plasma Processing Apparatus - This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source. | 06-17-2010 |
| 20100144127 | METHOD FOR REDUCING AGGLOMERATION OF Si LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND VACUUM TREATMENT APPARATUS - The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the outermost surface of the SOI substrate and is in an exposed state, and can prevent the agglomeration further without forming a protective film on the SOI substrate. The method for reducing the agglomeration of the Si layer in the SOI substrate is a method of supplying a hydride gas in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer which is in an exposed state in the SOI substrate that has an insulation layer and the Si layer sequentially stacked on a Si substrate. In this method, the hydride gas dissociates before the Si layer coheres, at a temperature at which the Si layer does not yet start agglomeration, and terminates a dangling bond of the Si layer with a predetermined atom such as H. | 06-10-2010 |
| 20100133092 | SPUTTERING METHOD AND SPUTTERING APPARATUS - A sputtering method and a sputtering apparatus are provided in which a target is disposed being inclined relative to a substrate placed on a substrate-placing table so that the condition of d≧D is satisfied, (d is the diameter of the substrate, and D is the diameter of the target), and the total number of rotations R of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof becomes ten or more. Also the sputtering method and the sputtering apparatus are provided in which the rotational speed V of the substrate-placing table is controlled so that the total number of rotations R thereof satisfies the formula of | 06-03-2010 |
| 20100133090 | FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage. | 06-03-2010 |
| 20100129539 | SUBSTRATE HOLDER MOUNTING DEVICE AND SUBSTRATE HOLDER CONTAINER CHAMBER - A substrate holder mounting device is provided that is compact and has a simple structure. The substrate holder mounting device according to the present invention is provided with: a first and a second mounting mechanisms ( | 05-27-2010 |
| 20100126669 | VACUUM TREATMENT APPARATUS - Provided is a vacuum treatment device capable of uniformly treating the whole of a substrate in a vacuum container. In the vacuum treatment device in which the substrate is placed and held in the recess of a substrate holder, the difference between the heights of the surface of the substrate holder and the surface of the substrate to be treated is set to be equal to or shorter than 0.2 mm, and the distance between the side surface of the substrate and the inner surface of the recess of the substrate holder is set to be equal to or shorter than 5 mm. | 05-27-2010 |
| 20100124825 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 05-20-2010 |
| 20100120238 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD - A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamber | 05-13-2010 |
| 20100112194 | MASK FIXING DEVICE IN VACUUM PROCESSING APPARATUS - A vacuum processing apparatus which processes an object to be processed with the use of a mask membrane plane of magnetic material and a mask frame of the magnetic material is characterized in that the mask of the magnetic material is attracted by an electro-permanent magnet that is disposed in an opposite side of the mask with respect to the surface having the object to be processed mounted thereon. | 05-06-2010 |
| 20100111512 | HEATING PROCESS APPARATUS - An object of the present invention is to provide a heating process apparatus capable of being controlled to a constant temperature and to temperatures in a high-temperature range higher than or equal to a 1850 degrees. A heating process apparatus includes: a process chamber; a heat-processed object support member provided in the process chamber; a heater provided inside the heat-processed object support member; and temperature measuring means for measuring the temperature of the heat-processed object support member; wherein the temperature measuring means is provided outside a transmissive window provided in a peripheral wall of the process chamber and through which infrared energy radiated from the heat-processed object support member can be transmitted; and the temperature measuring means comprises a collector collecting infrared energy radiated from the heat-processed object support member and a calculating unit calculating temperature based on the ratio between the intensities of two wavelengths in the infrared. | 05-06-2010 |
| 20100108496 | SPUTTERING APPARATUS, THIN FILM FORMATION APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A sputtering apparatus includes a first target accommodating unit to accommodate a first target for film formation on a substrate; a first heater, arranged to surround the first target, for heating the substrate; and a second target accommodating unit arranged to surround the first heater to accommodate a second target for film formation on the substrate. | 05-06-2010 |
| 20100108495 | THIN FILM FORMATION APPARATUS AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a thin film formation apparatus which includes a plurality of chambers, and performs processing for forming thin films on two surfaces of a substrate transferred to the plurality of chambers, wherein a first sputtering chamber of the plurality of chambers includes a first sputtering film formation unit configured to perform a sputtering film formation process on a first surface of the substrate, and a first heating unit configured to heat a second surface opposite to the first surface of the substrate, and a second sputtering chamber of the plurality of chambers includes a second heating unit configured to heat the first surface of the substrate having undergone the sputtering film formation process performed by the first sputtering chamber, and a second sputtering film formation unit configured to perform a sputtering film formation process on the second surface of the substrate heated by the first sputtering chamber. | 05-06-2010 |
| 20100101075 | SUBSTRATE TRANSPORT APPARATUS AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - A substrate transport apparatus comprises chambers connected to each other through a gate valve, a transport mechanism configured to open the gate valve and to transport a carrier between the chambers along a transport path, a sensor configured to detect the carrier before the carrier reaches a stop position in the chamber, and a controller configured to cause the gate valve to start closing based on the detection signal from the sensor. | 04-29-2010 |
| 20100096568 | SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD OF THE SAME - A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator. | 04-22-2010 |
| 20100096262 | ELECTROSTATIC CHUCK - An electrostatic chuck ( | 04-22-2010 |
| 20100084392 | SUBSTRATE SUPPORTING/TRANSFERRING TRAY - To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction. | 04-08-2010 |
| 20100081355 | SUBSTRATE HOLDING APPARATUS, CARRIER, SUBSTRATE PROCESSING APPARATUS, AND IMAGE DISPLAY DEVICE MANUFACTURING METHOD - An apparatus comprises a carrier configured to hold a mask containing a magnetic material and a substrate by magnetically attracting the mask via the substrate, and a controller configured to control the carrier, the carrier including a permanent electromagnet and a first contact, the permanent electromagnet including a variable-polarity magnet, a coil electrically connected to the first contact and generates a magnetic field for changing the polarity of the variable-polarity magnet by an electric current supplied via the first contact, and a fixed-polarity magnet. The controller includes a second contact which is in contact with the first contact and supplies an electric current to the coil via the first contact, a sensor unit which senses a contact state between the first contact and the second contact, and a current supply unit which supplies an electric current to the coil via the first contact and the second contact. | 04-01-2010 |
| 20100080894 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM - The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target. | 04-01-2010 |
| 20100080891 | HOLDING MECHANISM, PROCESSING APPARATUS INCLUDING HOLDING MECHANISM, DEPOSITION METHOD USING PROCESSING APPARATUS, AND METHOD OF MANUFACTURING IMAGE DISPLAY DEVICE - The present invention provides a holding mechanism which holds a processing object and a mask including a mask pattern located on the processing object, and a mask frame which supports the mask pattern in a periphery thereof, the mechanism including a base configured to hold, on a holding surface thereof, the processing object and the mask frame, a permanent magnet, arranged along the holding surface of the base, configured to fix the processing object and the mask on the base by magnetically attracting the mask, and a pressing unit which is located on a peripheral portion of the mask pattern, includes a to-be-attracted portion magnetically attracted by the permanent magnet, and is configured to press the peripheral portion of the mask pattern toward the base as the permanent magnet magnetically attracts the to-be-attracted portion. | 04-01-2010 |
| 20100079742 | SUBSTRATE HOLDING APPARATUS, MASK, SUBSTRATE PROCESSING APPARATUS, AND IMAGE DISPLAY DEVICE MANUFACTURING METHOD - An apparatus comprises a carrier including a permanent electromagnet and configured to hold a mask containing a magnetic material and a substrate by magnetically attracting the mask via the substrate, and a sensor unit configured to sense a state of the carrier using a magnetic sensor for sensing a magnetic field from the permanent electromagnet, the permanent electromagnet including a variable-polarity magnet, a coil which generates a magnetic field for changing the polarity of the variable-polarity magnet, and a fixed-polarity magnet having fixed polarity, a state of the carrier is set in one of a first state in which the mask and the substrate are held by a magnetic field generated by the variable-polarity magnet and the fixed-polarity magnet, and a second state in which the mask and the substrate are not held, by controlling the polarity of the variable-polarity magnet by the magnetic field generated by the coil. | 04-01-2010 |
| 20100079054 | PROCESSING APPARATUS AND IMAGE DISPLAY DEVICE - The present invention provides a processing apparatus including a processing unit configured to process a processing object in a processing chamber by bringing a mask into contact with the processing object at a predetermined position, a base configured to hold the processing object on a holding surface, a structure configured to connect the base in a portion opposite to the holding surface of the base, and a driving unit configured to change a processing position of the processing object by pivoting the structure about a rotation shaft parallel to the holding surface of the base, the processing unit including an operation unit configured to perform, at an identical position, a fixing process and a release process, and a deposition processing unit configured to perform a deposition process on the processing object while the mask is in contact with the processing object. | 04-01-2010 |
| 20100078313 | SPUTTERING APPARATUS AND METHOD OF THIN FILM FORMATION - The present invention provides a sputtering apparatus and a method of thin film formation, whereby a film having quality superior in uniformity even for relatively large substrates can be obtained and the generation of particles and nodules is suppressed. The sputtering apparatus of the present invention includes: a vacuum vessel ( | 04-01-2010 |
| 20100078310 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM - The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target. | 04-01-2010 |
| 20100075508 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH | 03-25-2010 |
| 20100062181 | METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD - A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member. | 03-11-2010 |
| 20100055348 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus for forming a thin film by depositing material particles separated from a deposition material on a deposition object by irradiation with a plasma supplied from a plasma generator into a chamber including a hearth accommodating the deposition material, and a capturing mechanism installed near the hearth and outside the range of a moving region of the material particles moving toward the deposition object. The moving region is determined by a width in an incident direction in which the plasma is incident on the deposition material, and the width of the deposition object | 03-04-2010 |
| 20100047471 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 02-25-2010 |
| 20100046134 | Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate. | 02-25-2010 |
| 20100044340 | METHOD OF FABRICATING MAGNETIC DEVICE - A magnetic device is fabricated by etching a magnetic film in an atmosphere of plasma using a non-organic film as a mask. An atmosphere of plasma is generated by using at least one kind of gasifying compound selected from a gasifying compound group consisting of ethers, aldehydes, carboxylic acids, esters and diones; and by using a non-organic material mask, etching a magnetic film or diamagnetic film which includes at least one kind of metal selected from a metal group consisting of VIII group, IX group and X group elements in a periodic table. As a gas in the atmosphere of plasma, at least one kind of gas selected from a gas group consisting of oxygen, ozone, nitrogen, H | 02-25-2010 |
| 20100040802 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 02-18-2010 |
| 20100037822 | VACUUM PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum processing vessel, a partition which is made of a conductive material, and partitions the interior of the vacuum processing vessel into a first space for generating a plasma, and a second space for processing a substrate by the plasma, a high-frequency electrode for plasma generation installed in the first space, and a substrate holding mechanism which is installed in the second space and holds the substrate. The partition has a plurality of through holes which allow the first and second spaces to communicate with each other. The through holes are covered with a covering material having a recombination coefficient higher than that of the conductive material. | 02-18-2010 |
| 20100037821 | VACUUM PROCESSING APPARATUS - Disclosed is a vacuum processing apparatus in which a conducive partition having a plurality of through holes is formed inside a vacuum processing vessel, and an internal space of the vacuum processing vessel is partitioned into a plasma generating space in which a high-frequency electrode is installed to function as a counter electrode with respect to the partition, and a substrate processing space in which a substrate is set. This vacuum processing apparatus includes a gas reservoir formed on a sidewall of the vacuum processing vessel and communicating with the plasma generating space, and a gas supply system connected to the gas reservoir to supply a gas to the gas reservoir. | 02-18-2010 |
| 20100033878 | TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FORMATION APPARATUS - The present invention provides a tunnel magnetoresistive thin film having a high MR ratio by improving heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses preferable exchange coupling magnetic field even through annealing at high temperature. | 02-11-2010 |
| 20100028562 | PLASMA GENERATING APPARATUS, DEPOSITION APPARATUS, DEPOSITION METHOD, AND METHOD OF MANUFACTURING DISPLAY DEVICE - A deposition apparatus includes a plasma gun including a hollow cathode which generates a plasma beam into a vacuum chamber including an exhaust system and one or more intermediate electrodes to provide a potential gradient for the plasma beam, a focusing coil which is provided to surround the outer surface of a tube portion of the vacuum chamber located coaxially with the exit portion for outputting a plasma beam from the plasma gun and draws the plasma beam into the vacuum chamber through the tube portion, and a reflected electron feedback electrode which is placed inside the tube portion coaxially with the exit portion of the plasma gun and has a positive polarity. | 02-04-2010 |
| 20100028529 | SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other. | 02-04-2010 |
| 20100025695 | ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H | 02-04-2010 |
| 20100025363 | SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded. | 02-04-2010 |
| 20100006560 | SUBSTRATE HEATING APPARATUS AND SUBSTRATE HEATING METHOD - In a substrate heating apparatus including a vacuum vessel with an interior separated by a wall body into a first space and a second space, the first space being evacuated to a vacuum by a first exhaust means and accommodating a substrate to be heated, and the second space being evacuated to a vacuum by a second exhaust means and including a heating means for heating the substrate accommodated in the substrate, the time required to evacuate the first space to a vacuum by the first exhaust means is shortened, thus improving the throughput. The wall body has a non-coating surface, which is not coated, on part of a wall body surface which faces the second space. A coating is formed on the remaining portion of the wall body surface. | 01-14-2010 |
| 20100006470 | VACUUM VESSEL, VACUUM PROCESSING APPARATUS COMPRISING VACUUM VESSEL, AND VACUUM VESSEL MANUFACTURING METHOD - A vacuum vessel includes: a pair of bent members formed by bending two metal plates and connected to each other to form a closed space inside; one looped seal member which seals connecting portions of the pair of bent members; a structure arranged in the closed space to abut against an inner surface of the closed space formed by the pair of bent members; and a fastening member which connects the connecting portions of the pair of bent members. | 01-14-2010 |
| 20100003423 | PLASMA GENERATING APPARATUS AND FILM FORMING APPARATUS USING PLASMA GENERATING APPARATUS - The cross section of a beam is flattened by causing a plasma beam ( | 01-07-2010 |
| 20090325330 | METHOD FOR MANUFACTURING ELECTRON EMITTING DEVICE AND MEMORY MEDIUM OR RECORDING MEDIUM THEREFOR - A method and an apparatus for manufacturing a high intensity electron emitting device using a boron lanthanum compound thin film are provided. An electron emitting base member region is opened in a second substrate disposed with an electron emitting base member, and is applied with a mask screening another region, thereby sputter-accumulating the sputtered particles of a low work function substance target. The second substrate sputter-accumulated and a first substrate disposed with phosphor are sealed by a sealing agent to fabricate a vacuum chamber. During the fabrication step, the first and second substrates are consistently maintained in a vacuum atmosphere or a reduced pressure atmosphere. | 12-31-2009 |
| 20090325329 | METHOD FOR MANUFACTURING ELECTRON EMITTING DEVICE AND MEMORY MEDIUM OR RECORDING MEDIUM THEREFOR - A method and an apparatus for manufacturing a high intensity electron emitting device using a boron lanthanum compound thin film are provided. Sputtered particles of a low work function substance target are accumulated on a second substrate disposed an electron emitting base member. By using a mask for screening the electron emitting base member region opening other regions, the deposition of a low work function substance on the second substrate is etched, and after that, the second substrate and the first substrate disposed with the phosphor are sealed by a sealing agent to fabricate a vacuum chamber. During the fabrication step thereof, the first and second substrates are consistently maintained in a vacuum atmosphere or a reduced pressure. | 12-31-2009 |
| 20090324848 | METAL FILM PRODUCTION APPARATUS - A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl | 12-31-2009 |
| 20090322419 | AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE - An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal. | 12-31-2009 |
| 20090321412 | VACUUM HEATING APPARATUS - Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus | 12-31-2009 |
| 20090321246 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer. | 12-31-2009 |
| 20090320948 | STACKED LOAD LOCK CHAMBER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A stacked load lock chamber comprises a first load lock chamber, a second load lock chamber stacked on the first load lock chamber, a first slit-valve mover configured to open and close a first opening provided to an atmosphere side of the first load lock chamber, a second slit-valve mover configured to open and close a second opening provided to an atmosphere side of the second load lock chamber, a first arm connected to the first slit-valve mover, a second arm connected to the second slit-valve mover, and a driver located below the first and second load lock chambers and configured to drive the first and second arms to move the first and second slit-valve movers through the first and second arms. | 12-31-2009 |
| 20090314740 | MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD AND MULTI-CHAMBER APPARATUS FOR MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT - A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4×10 | 12-24-2009 |
| 20090311866 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 12-17-2009 |
| 20090308537 | SUBSTRATE SUPPORT DEVICE AND PLASMA PROCESSING APPARATUS - There is provided a substrate support device capable of preventing powder dust from being produced. A thermoconductive intermediate member is interposed between a base table and a substrate support table and has a communication aperture path for communicating the aperture path of the base table with the aperture path of the substrate support table. An elastic member such as bellows tube is disposed in the communication aperture path of the thermoconductive intermediate member, for insulating the thermoconductive intermediate member from the inert gas which flows through the communication aperture path. | 12-17-2009 |
| 20090308317 | CARRIER WITH DEPOSITION SHIELD - The peeling-off of a deposited film caused by a carrier is restrained, and the exchange period of the carrier is prolonged. In a carrier | 12-17-2009 |
| 20090304931 | MASK, DEPOSITION APPARATUS USING MASK, DEPOSITION METHOD USING MASK, AND DEVICE MANUFACTURING METHOD USING DEPOSITION APPARATUS - Four masks respectively corresponding to the four sides of a rectangular glass substrate are prepared. The four masks are set in a deposition chamber in a divisional state. When the masks are moved linearly on a plane flush with the glass substrate in directions perpendicular to the respective sides of the glass substrate, the divisional masks are connected to each other and form a mask as one assembly. At this time, the masks cover the periphery of the glass substrate entirely. | 12-10-2009 |
| 20090298288 | SILICIDE FORMING METHOD AND SYSTEM THEREOF - Radical in a plasma generation chamber is supplied to a process chamber through an introducing aperture, and HF gas is supplied as a process gas from the vicinity of the radical introducing aperture. A native oxide film of the substrate surface of a IV group semiconductor doped an impurity is removed, with a good surface roughness equal to the wet cleaning. The substrate after the surface treatment is deposited with a metal material and metal silicide formation by thermal treatment is performed, and during these processes, the substrate is not exposed to the atmosphere, and a good contact resistance equal to or better than the wet process is obtained. | 12-03-2009 |
| 20090294281 | PLASMA FILM FORMING APPARATUS AND FILM MANUFACTURING METHOD - A plasma film forming apparatus having a plasma gun which emits a plasma beam and a magnet which applies a magnetic field to the plasma beam emitted from the plasma gun to deform the beam section of the plasma beam into an almost rectangular or elliptic shape includes a plurality of magnet units which deflect the plasma beam the beam section of which is deformed, to irradiate an irradiation target with the deflected plasma beam. A first magnet to be arranged on a lower backside to a surface of the irradiation target and a second magnet having magnetic poles which are the same as those of the first magnet are arranged in each magnet unit. The first magnet and the second magnet line up to be spaced apart from each other. | 12-03-2009 |
| 20090291610 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - This invention provides a substrate processing apparatus and a substrate processing method for improving the adhesion of a patterned region which is a relatively thin region of a metal mask to a substrate. According to one embodiment of this invention, in a method for fixing a metal mask ( | 11-26-2009 |
| 20090291203 | SUBSTRATE TRAY AND FILM FORMING APPARATUS - A substrate tray which holds a substrate and is arranged to oppose a thin film material source is characterized by including a holding member which holds the substrate and is provided with an opening through which thin film material particles emitted from the thin film material source to be deposited on the substrate pass, a first mask which is arranged between the holding member and the substrate and shields the thin film material particles passing through the opening not to deposit on the substrate, to form a thin film having a predetermined shape on the substrate, and a second mask which is arranged between the holding member and the first mask and covers the first mask at least partly to shield the thin film material particles not to deposit on the first mask. | 11-26-2009 |
| 20090288944 | SPUTTERING APPARATUS AND METHOD OF MANUFACTURING SOLAR BATTERY AND IMAGE DISPLAY DEVICE BY USING THE SAME - A sputtering apparatus of a continuous system that a first target | 11-26-2009 |
