CANON ANELVA CORPORATION Patent applications |
Patent application number | Title | Published |
20160130700 | DEPOSITION APPARATUS - A deposition apparatus comprises a source unit configured to generate a plasma by arc discharge, a deposition unit in which a deposition target material is arranged so as to be irradiated with the plasma generated in the source unit, and an induction unit configured to induce the plasma for the source unit to the deposition unit. The induction unit comprises a partition unit airtightly connected to each of the source unit and the deposition unit and configured to pass the plasma inside, and a plurality of magnet units configured to form a magnetic field to induce the plasma in the partition unit. The plurality of magnet units are connected to adjust a connection angle, and the partition unit includes a tubular member bendable according to the connection angle of the plurality of magnet units. | 05-12-2016 |
20160060750 | DEPOSITION APPARATUS - A deposition apparatus comprises a target unit, an anode unit into which electrons emitted from the target unit flow, a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit, a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit, a power supply unit configured to supply power to the target unit and the anode unit, and a control unit configured to control the striker driving unit and the power supply unit. The control unit supplies the power to the target unit and the anode unit after bringing the striker into contact with the target unit. | 03-03-2016 |
20160057812 | VACUUM PROCESSING DEVICE - A vacuum processing apparatus according to this invention includes a heating unit arranged to face a processing surface of a substrate supported by a substrate support unit in a vacuum chamber, a cooling unit arranged to face a reverse surface of the substrate supported by the substrate support unit, a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate and the cooling unit when the heating unit heats the substrate, and a correction unit moving device configured to retract the temperature correction unit from the predetermined position. | 02-25-2016 |
20160056026 | PROCESSING APPARATUS - The present invention provides a processing apparatus including a vacuum vessel, a plurality of electrodes arranged in the vacuum vessel, a plurality of power supplies configured to apply potentials to the plurality of electrodes, a detector configured to detect a potential in a process space between a substrate transferred into the vacuum vessel and each of the plurality of electrodes, and a controller configured to control phases of the potentials to be applied to the plurality of electrodes by the plurality of power supplies based on the potential detected by the detector. | 02-25-2016 |
20160042928 | SPUTTERING APPARATUS - A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit. | 02-11-2016 |
20160027624 | SPUTTERING APPARATUS - A sputtering apparatus that forms a film on a substrate by sputtering in a chamber includes an electrode including a holding portion that holds a target, and configured to apply a potential to the target via the holding portion, a first magnet and second magnet arranged to sandwich a space between the holding portion, and a substrate arrangement surface on which the substrate should be arranged, and to be spaced apart from each other in a direction along the substrate arrangement surface, a shield arranged between the first magnet and the second magnet, and between the substrate arrangement surface and the holding portion, and a rotation driving unit configured to integrally rotate the target, the first magnet, and the second magnet. | 01-28-2016 |
20160027623 | SPUTTERING APPARATUS - A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter. | 01-28-2016 |
20160005957 | PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT AND DEVICE PRODUCING METHOD - A production process in which in an element isolation process for a magnetoresistive effect element, a re-deposited film adhered to a side wall of the element is efficiently removed by ion beam etching. Ion beam etching is performed while a substrate located being inclined relative to the grid is rotated. In the ion beam etching, an energy amount of an ion beam entering from a direction in which a pattern groove formed on the substrate extends is increased larger than the energy amount of the ion beam entering from another direction by controlling a rotation speed of the substrate, and the re-deposited film adhered to the side wall of the magnetoresistive effect element formed on the substrate is efficiently removed by etching. | 01-07-2016 |
20150357214 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a tilting unit configured to tilt, in a vacuum vessel, a substrate holder including a refrigerator, and a rotary joint provided in the tilting unit and including a coolant path configured to supply or exhaust a coolant gas to or from the refrigerator. The rotary joint includes a fixed portion fixed to the vacuum vessel, a pivotal portion provided so as to pivot with respect to the fixed portion and fixed to the substrate holder, and a grease supply passage. | 12-10-2015 |
20150348579 | MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - A magnetic recording medium having high coercivity, in which an L1 | 12-03-2015 |
20150318185 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE - A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. | 11-05-2015 |
20150311432 | PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT - This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. | 10-29-2015 |
20150294845 | SUBSTRATE PROCESSING APPARATUS - An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction. | 10-15-2015 |
20150262797 | SPUTTERING APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals. | 09-17-2015 |
20150262796 | SPUTTERING APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is conveyed. The first to fourth target holders are arranged on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis, the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle, and a distance to the gate valve is shorter than distances from the third target holder and the fourth target holder to the gate valve. | 09-17-2015 |
20150235822 | PROCESSING APPARATUS - The present invention provides a processing apparatus including a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate and a second surface on an opposite side to the first surface and configured to supply a material to apply a process to the substrate, a shield member including a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate, and a moving device configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other. | 08-20-2015 |
20150083586 | DEPOSITION APPARATUS - A deposition apparatus comprises a source unit having a function of generating a plasma by an arc discharge; and a filter unit configured to transport the plasma generated by the source unit toward a material to be deposited, wherein the filter unit includes a duct configured to transport the plasma, a magnetic field formation unit configured to form, in the duct, a magnetic field for transporting the plasma, and a magnetic field bending unit configured to generate a magnetic force for bending the magnetic field formed by the magnetic field formation unit. | 03-26-2015 |
20140368210 | COLD CATHODE IONIZATION VACUUM GAUGE AND INNER WALL PROTECTION MEMBER - A cold cathode ionization vacuum gauge, including: two electrodes disposed such that one of the electrodes is surrounded by the other electrode to thereby form a discharge space therebetween; and an electrode protection member disposed in the discharge space and configured to protect an inner wall surface of the other electrode, wherein the electrode protection member has electric conductivity and is elastically deformed along a shape of the inner wall surface to be electrically connected to the other electrode. | 12-18-2014 |
20140351747 | INFORMATION PROCESSING APPARATUS FOR PROCESSING PLURAL EVENT DATA GENERATED BY PROCESSING APPARATUS - An information processing apparatus for processing a plurality of event data generated by a processing apparatus for processing a member, includes a determination unit which determines at least two event data existing at a preset interval in a time-series sequence of the plurality of event data, a specification unit which acquires a scroll request containing designation information for designating a position in the sequence from a scroll function incorporated in the information processing apparatus, and specify, as jump destination event data, event data at a position close to the position designated by the designation information in the sequence, among the at least two event data determined by the determination unit, and a control unit which causes the scroll function to start scrolling from or near the jump destination event data. | 11-27-2014 |
20140338836 | ETCHING APPARATUS - An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate. | 11-20-2014 |
20140308028 | SUBSTRATE HEAT TREATMENT APPARATUS - An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate. | 10-16-2014 |
20140290282 | REFRIGERATOR AND COLD TRAP - This invention provides a cold trap using a Stirling refrigerator. A refrigerator includes a drive piston configured to drive a free piston so as to reciprocally move a working medium between a heat dissipation portion and a heat absorption portion, a vibration sensor configured to measure a vibration of a case, a dynamic vibration absorber configured to reduce the vibration of the case when the drive piston is driven, and a frequency adjustment device configured to adjust a driving frequency to reduce the vibration of the case when the drive piston is driven in a state in which the case is connected to a vacuum device. | 10-02-2014 |
20140284210 | SPUTTERING APPARATUS, TARGET AND SHIELD - A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion. | 09-25-2014 |
20140283743 | PROCESSING DEVICE AND SHIELD - A processing apparatus includes a substrate holding portion, a shield arranged to surround a substrate, and a shield holding portion configured to hold the shield. The shield includes first magnets each having a magnetic pole of a first polarity facing the shield holding portion, and second magnets each having a magnetic pole of a second polarity facing the shield holding portion. The first magnets and the second magnets are arranged at positions symmetrical with respect to the center of the shield. The shield holding portion includes third magnets each having a magnetic pole of the first polarity facing the shield, and fourth magnets each having a magnetic pole of the second polarity facing the shield. | 09-25-2014 |
20140273425 | CYCLICAL PHYSICAL VAPOR DEPOSITION OF DIELECTRIC LAYERS - Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness. | 09-18-2014 |
20140262769 | SUBSTRATE HOLDER APPARATUS AND VACUUM PROCESSING APPARATUS - A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, and a housing configured to support the first rotating support unit and the second rotating support unit. The second rotating support unit and the housing or the support column and the housing are electrically insulated from each other. | 09-18-2014 |
20140262766 | PROCESSING APPARATUS AND SHIELD - A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion. | 09-18-2014 |
20140261182 | SUBSTRATE PROCESSING APPARATUS - The present invention provides a vacuum processing apparatus capable of reducing attachment of particles generated in a processing space to an inner wall of a chamber, and of easily adjusting pressure in the processing space while introducing a gas into the processing space at a desired flow rate. A vacuum processing apparatus according to one embodiment includes: a container; a gas exhaust portion; a substrate holder configured to retain a substrate; a shield provided to surround the substrate holder and dividing an inside of the container into a processing space and an outside space; a gas introducing portion; a plasma generating portion; and an exhaust portion provided to the shield having a communication path through which the processing space and the outside space communicate, wherein at least part of the communication path is hidden from a region where the plasma generating portion generates the plasma. | 09-18-2014 |
20140261161 | SUBSTRATE HOLDER APPARATUS AND VACUUM PROCESSING APPARATUS - A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, a housing configured to support the first rotating support unit and the rotating support unit, and a conductive member configured to electrically connect the support column to the housing. | 09-18-2014 |
20140250678 | SUBSTRATE TRANSPORT APPARATUS, ELECTRONIC DEVICE MANUFACTURING SYSTEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate transport apparatus comprises a substrate holder capable of holding a substrate, a link unit which extends/retracts the substrate holder, a driving unit which generates a driving force to operate the link unit, a guide bar provided to one of the substrate holder and the link unit; and a support unit which is provided to the other of the substrate holder and the link unit, and slidably supports the guide bar when the substrate holder moves by the operation of the link unit. | 09-11-2014 |
20140230728 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a process chamber, a load lock chamber connected to the process chamber, and a transfer device configured to transfer a substrate from the load lock chamber to the process chamber. The transfer device is configured to move the substrate by gravity. The transfer device includes a guide configured to form a transfer path when the substrate moves by the gravity, and a stopper configured to limit movement of the substrate by the gravity when holding the substrate, and cancel the limitation when moving the substrate. | 08-21-2014 |
20140208860 | DIAPHRAGM-TYPE PRESSURE GAUGE - A diaphragm-type pressure gauge which is attached to a vessel to be measured and measures a pressure by introducing a gas inside the vessel includes a housing into which the gas is introduced, and a sensor unit which is arranged in the housing, and includes a diaphragm electrode, a measurement surface of which is arranged parallel to an introduction direction of the gas. When the housing is attached to the vessel, the measurement surface of the diaphragm electrode is arranged parallel to a direction of gravitational force. | 07-31-2014 |
20140208859 | DIAPHRAGM-TYPE PRESSURE GAUGE - A pressure gauge includes a first sensor for detecting a pressure in a first range, a second sensor for detecting a pressure in a second range, and a processing unit for determining a pressure value based on outputs from the first sensor and the second sensor. The first and the second ranges have an overlapping range, an upper limit of the second range is higher than that of the first range, the processing unit determines a correction value based on outputs from the first sensor and the second sensor when a pressure falls within the overlapping range, and the processing unit determines a pressure value based on an output from the second sensor and the correction value, when measuring, by using the second sensor, a pressure in the second range, higher than that of the first pressure range. | 07-31-2014 |
20140206197 | METHOD OF FABRICATING FIN FET AND METHOD OF FABRICATING DEVICE - In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls. | 07-24-2014 |
20140183394 | CONDUCTANCE VALVE AND VACUUM PROCESSING APPARATUS - A conductance valve is configured to be able to adjust the conductance by adjusting the opening degree of an opening formed in part of the wall surface a vacuum vessel. The conductance valve includes a swing arm which is pivotally coupled to a driving portion, and a rectangular valve body which is coupled to the swing arm and is pivotal with respect to it. When the swing arm pivots, the rectangular valve body is pivoted by a predetermined angle. The overhang of the valve body at the closed position of the conductance valve can be reduced. | 07-03-2014 |
20140174355 | PLASMA CVD APPARATUS AND VACUUM TREATMENT APPARATUS - In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet. | 06-26-2014 |
20140170778 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND METHOD OF PROCESSING MAGNETORESISTIVE FILM - In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced. | 06-19-2014 |
20140158524 | REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS - The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMnO3 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. | 06-12-2014 |
20140138347 | METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT - In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented. | 05-22-2014 |
20140124363 | ION BEAM GENERATOR AND ION BEAM PLASMA PROCESSING APPARATUS - The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug. | 05-08-2014 |
20140102889 | FILM-FORMING APPARATUS - An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated. | 04-17-2014 |
20140097079 | FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS - The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. | 04-10-2014 |
20140054167 | FILM-FORMING APPARATUS - The present invention provides a film forming apparatus configured such that the occurrence of contamination is reduced between targets. The film forming apparatus includes: a plurality of target electrodes respectively having attachment surfaces to which targets can be attached; a substrate holder for holding a substrate at a position opposing the plurality of target electrodes; a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that can oppose the attachment surfaces; and a shield member disposed adjacent to the first shutter member and having a number of openings equal to the number of the target electrodes, wherein a gap between the first shutter member and the shield member widens toward an outer perimeter from a portion where adjacent target electrodes are closest. | 02-27-2014 |
20140054164 | DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber. | 02-27-2014 |
20140034489 | FILM-FORMING APPARATUS - A film-forming apparatus includes a plurality of target electrodes, a substrate holder for holding a substrate, a fires shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; and second separating walls provided between the first shutter member and the target electrodes, wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member. | 02-06-2014 |
20140024140 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME - A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure. | 01-23-2014 |
20140020833 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus for processing a substrate with plasma including: a container including a first container member that forms a processing space in which the substrate is processed, and a second container member that forms a plasma generation space in which plasma is generated a gas introduction unit for introducing gas into the container; a plasma generation unit including an antenna that is provided in an external space of the container and configured to excite the gas in the plasma generation space with an electric field that is generated by a high-frequency voltage fed from a power supply; and a substrate holding unit that is capable of holding the substrate. A coating film that contains a semiconductor material is formed on a surface of the second container member that is arranged close to the antenna. | 01-23-2014 |
20140014269 | PROCESSING APPARATUS - A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces. | 01-16-2014 |
20130285158 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer. | 10-31-2013 |
20130220551 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a substrate stage, a strut which supports the substrate stage, a first rotation drive portion which rotates the support, and at least three lift pins which are provided in the substrate stage. The substrate processing apparatus includes an elevation mechanism for vertically moving the lift pins. The elevation mechanism includes a first rotating member which is disposed around the support and rotates about the support, a second rotation drive portion which rotates about a rotation axis at a position offset from the rotation axis and rotates the first rotating member, at least three second rotating members which rotate while engaging with rotation of the first rotating member and are disposed below the lift pins, mobile bodies which linearly move upon rotation of the second rotating members, and pins which vertically move the lift pins. | 08-29-2013 |
20130164108 | SUBSTRATE SUPPORTING APPARATUS AND SUBSTRATE TRANSPORTING APPARATUS - A substrate supporting apparatus comprises a substrate support that supports a substrate; a first connecting member that is connected to the substrate support and includes a first magnet; a second connecting member that is arranged while facing the first connecting member, is connectable to a transport robot for transporting the substrate to a substrate holder, and includes a second magnet magnetically coupled with the first magnet; and a spacer configured to hold an interval between the first connecting member and the second connecting member, wherein the first connecting member and the second connecting member are relatively movable in a plane direction of the substrate via the spacer. | 06-27-2013 |
20130161187 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed. | 06-27-2013 |
20130161182 | SPUTTER APPARATUS, CONTROL DEVICE FOR SPUTTER APPARATUS AND FILM FORMATION METHOD - In an embodiment of the present invention, the following operations are performed while a substrate holder is being rotated at a fixed rotation speed with plasma being generated. Specifically, a first state where a substrate holding surface of the substrate holder is exposed to a target holder is formed to start a first deposition of divisional depositions, and a second state where the surface is shut off from the target holder is formed in T/X seconds after the start of the first divisional deposition. Moreover, the first state is formed to start an n-th deposition of the divisional depositions when a reference point set on the substrate holder arrived at a position rotated by (n−1)×360/X degrees from a position of the reference point located at the start of the targeted deposition, and the second state is formed in T/X seconds after the start of the n-th divisional deposition. | 06-27-2013 |
20130134032 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped. | 05-30-2013 |
20130113169 | POWER INPUT DEVICE AND VACUUM PROCESSING APPARATUS USING THE SAME - A power input mechanism includes a first stationary conductive member, a second stationary conductive member, a stationary insulating member which is fixed to a housing and insulates the first stationary conductive member and the second stationary conductive member from each other, a first rotary conductive member, a second rotary conductive member, a rotary insulating member which is fixed to a support column and insulates the first rotary conductive member and the second rotary conductive member from each other, a first power input member which supplies a first voltage to a substrate holder via the first rotary conductive member and the first stationary conductive member, and a second power input member which supplies a second voltage to the substrate holder via the second rotary conductive member and the second stationary conductive member. | 05-09-2013 |
20130109109 | SUBSTRATE HEAT TREATING APPARATUS, TEMPERATURE CONTROL METHOD OF SUBSTRATE HEAT TREATING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, TEMPERATURE CONTROL PROGRAM OF SUBSTRATE HEAT TREATING APPARATUS, AND RECORDING MEDIUM | 05-02-2013 |
20130105298 | SPUTTERING APPARATUS, FILM DEPOSITION METHOD, AND CONTROL DEVICE | 05-02-2013 |
20130093529 | OSCILLATOR ELEMENT AND METHOD FOR PRODUCING THE OSCILLATOR ELEMENT - An oscillator element according to one embodiment of the present invention includes a magnetoresistive element having a magnetization free layer, magnetization fixed layer, and a tunnel barrier layer. Provided on the magnetization free layer are a protection layer and an electrode having a point contact section where the electrode is partially in electrical contact with the protection layers. An interlayer insulating film is provided between the electrode and the protection layer. The area of the interface between the magnetization free layer and the tunnel barrier layer is larger than the surface area of the point contact section. Moreover, a portion of the protection layer in contact with the interlayer insulating film has a smaller thickness in a surface normal direction than the portion of the protection layer in contact with the electrode. | 04-18-2013 |
20130071975 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak current without increasing an equivalent oxide thickness. A method for manufacturing a semiconductor device in an embodiment of the present invention includes the steps of: preparing a substrate on which an insulating film having a relative permittivity higher than that of a silicon oxide film is formed; and depositing a metal nitride film on the insulating film. The metal nitride depositing step is a step of sputtering deposition in an evacuatable chamber using a metal target and a cusp magnetic field formed over a surface of the metal target by a magnet mechanism in which magnet pieces are arranged as grid points in such a grid form that the adjacent magnet pieces have their polarities reversed from each other. | 03-21-2013 |
20130048489 | ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD - An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate. | 02-28-2013 |
20130032468 | VACUUM PROCESSING APPARATUS, VACUUM PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate. | 02-07-2013 |
20120325651 | SPUTTERING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus ( | 12-27-2012 |
20120298303 | PLASMA TREATMENT APPARATUS - Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate. | 11-29-2012 |
20120288963 | MANUFACTURING METHOD OF MAGNETO-RESISTIVE ELEMENT - The present invention provides a manufacturing method of a magneto-resistive element capable of obtaining a higher MR ratio, in a method of forming a metal oxide layer (e.g., MgO layer) by oxidation treatment of a metal layer (e.g., Mg layer). An embodiment of the present invention includes the steps of; providing a substrate having a first ferromagnetic layer; fabricating a tunnel barrier layer on the first ferromagnetic layer; and forming a second ferromagnetic layer on the tunnel barrier layer. The step of fabricating the tunnel barrier layer includes; the steps of; depositing a first metal layer on the first ferromagnetic layer; | 11-15-2012 |
20120270412 | OXIDIZING METHOD AND OXIDIZING APPARATUS - An oxidizing method and oxidizing apparatus in which a plasma generating chamber having an oxidizing gas supply port and a substrate processing chamber having an exhaust port and internally having a substrate susceptor are connected via a partition having a number of through holes, a plasma of an oxidizing gas supplied into the plasma generating chamber is generated, and an oxide layer is formed on a substrate surface by supplying the generated active species onto a substrate are characterized in that the partition is connected to a power supply via a switching mechanism such that a positive, negative, or zero voltage is applied to the partition, and an oxidation process is performed by changing the ratio of radicals, positive ions, and negative ions in the active species supplied onto the substrate by switching the voltages at least once during the oxidation process. | 10-25-2012 |
20120258582 | METHOD AND APPARATUS FOR SELECTIVELY GROWING DOPED EPITAXIAL FILM - In one embodiment of the present invention, the processing surface of a substrate having at least a single crystal surface and a dielectric surface is exposed to a first deposition gas containing a source gas and a doping gas to form a first doped thin film on the single crystal surface, whereas supply of the first deposition gas is stopped before a film is formed on the dielectric surface. Next, the processing surface of the substrate is exposed to a second deposition gas containing a source gas and a doping gas to form a second thin film doped with less dopant than the first thin film on the single crystal surface, whereas supply of the second deposition gas is stopped before a film is formed on the dielectric surface. Subsequently, the processing surface of the substrate is exposed to a chlorine-containing gas to be etched. | 10-11-2012 |
20120248397 | NONVOLATILE STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more. | 10-04-2012 |
20120247952 | FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS - The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. | 10-04-2012 |
20120235034 | DEVICE FOR MEASURING MEAN FREE PATH, VACUUM GAUGE, AND METHOD FOR MEASURING MEAN FREE PATH - The present invention provides a device for measuring a mean free path capable of measuring directly the mean free path of a charged particle, a vacuum gauge, and a method for measuring a mean free path. The device for measuring a mean free path according to one embodiment of the invention includes an ion source for generating an ion, a collector ( | 09-20-2012 |
20120234672 | SPUTTERING METHOD AND SPUTTERING APPARATUS - This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S | 09-20-2012 |
20120228122 | SPUTTERING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus includes a target holder arranged in a vacuum chamber and holds a target to be deposited on a substrate, a substrate holder arranged in the vacuum chamber and supports the substrate, a shutter interposed between the target holder and the substrate holder, and that can set a closed state in which the shutter shields the substrate holder and target holder from each other, and an open state in which the shutter releases the space between the substrate holder and the target holder, a shutter support member which supports the shutter, and a joint mechanism interposed between the shutter support member and the shutter, and that can set a state in which the joint mechanism disconnects the shutter and shutter support member to be able to rotate the shutter, and a state in which the joint mechanism couples and fixes the shutter and shutter support member. | 09-13-2012 |
20120219921 | TEMPERATURE CONTROL METHOD FOR SUBSTRATE HEAT TREATMENT APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, TEMPERATURE CONTROL PROGRAM FOR SUBSTRATE HEAT TREATMENT APPARATUS, AND RECORDING MEDIUM - The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. | 08-30-2012 |
20120199919 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate electrode achieves a desired work function in a semiconductor device including a field-effect transistor equipped with a gate electrode composed of a metal nitride layer. | 08-09-2012 |
20120199477 | FILM FORMING APPARATUS - The present invention provides a film forming apparatus that can reduce the adherence of thin film material particles to a holding mechanism included in a substrate tray at the time of film formation. In an embodiment of the present invention, a sputtering chamber includes the substrate tray that has bottom clamps and side clamps, a movement mechanism that changes the position of the side clamps between when the film is formed on the substrate and when the substrate is transferred and a mask that has an opening of a predetermined shape through which sputter particles from a cathode pass. At the time of transfer, the movement mechanism moves the side clamps such that the side clamps hold the substrate; at the time of film formation, the movement mechanism moves the side clamps toward the outside of the substrate tray. | 08-09-2012 |
20120193216 | SUBSTRATE COOLING DEVICE, SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A substrate cooling device includes: a substrate holding stage including a recess defining a space between a substrate mounting unit and a substrate mounted on the substrate mounting unit; a holding member that exerts a pressing force against the substrate holding stage so as to fix the substrate to the substrate holding stage; a refrigerator connected to the substrate holding stage; a coolant gas inlet path including a coolant gas inlet opening that is provided at the substrate holding stage and opens to a recessed face of the recess, the coolant gas inlet path connecting a space in the recess via the coolant gas inlet opening to a coolant gas supply; and a coolant gas outlet path including a coolant gas outlet opening that is provided at the substrate holding stage independently of the coolant gas inlet opening and opens to the recessed face of the recess. | 08-02-2012 |
20120193071 | VACUUM HEATING/COOLING APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTANCE ELEMENT - The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber ( | 08-02-2012 |
20120164354 | SPUTTERING APPARATUS AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - The present invention provides a sputtering apparatus that can efficiently laminate thin films in a short time without lowering throughputs, and a manufacturing method of an electronic device. The sputtering apparatus according to an embodiment of the present invention includes a rotatable substrate holder, four target holders obliquely arranged with respect to the substrate holder, and a first shutter and a second shutter that each are provided between the target holders and the substrate holder and have two holes arranged two-fold symmetrical with respect to a rotational axis X. Two of the four target holders are first group target holders arranged two-fold symmetrical with respect to the rotational axis X, and the other two target holders are second group target holders arranged between the first group target holders and two-fold symmetrical with respect to the rotational axis X. | 06-28-2012 |
20120161322 | ELECTRONIC COMPONENT MANUFACTURING METHOD INCLUDING STEP OF EMBEDDING METAL FILM - The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets. | 06-28-2012 |
20120160805 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method comprises: an execution step of executing the first processing for the plurality of substrates, and executing the second processing for the substrates having undergone the first processing; a recovery step of recovering the plurality of substrates having undergone the first processing and the second processing to the retraction chamber; a conditioning step of, after completion of the first processing for the last substrate among the plurality of substrates, loading a dummy substrate into the first processing chamber, executing the third processing for the dummy substrate, and unloading the dummy substrate from the first processing chamber; and a second execution step of, after the dummy substrate is unloaded from the first processing chamber in the conditioning step, loading the substrates recovered in the recovery step into the first processing chamber, and executing the third processing for the substrates loaded into the first processing chamber. | 06-28-2012 |
20120160674 | SUBSTRATE CONVEYER AND VACUUM PROCESSING APPARATUS - An apparatus includes a chamber configured to form a reduced-pressure space, a carrier which holds a substrate, and a conveyer which conveys the carrier in the chamber. The chamber includes a side wall including an opening portion, and a partition wall arranged in the opening portion, the conveyer includes a permanent magnet provided on the carrier, and a driving magnet arranged outside the partition wall so as to drive the carrier, and the partition wall includes a first portion arranged between the driving magnet and a path through which the carrier passes, and a second portion arranged to connect the first portion to the side wall, the first portion having a smooth surface in a portion in which the first portion faces the path, and the first portion including a plurality of ribs arranged on a surface thereof on a side on which the driving magnet is arranged. | 06-28-2012 |
20120160673 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape. | 06-28-2012 |
20120160672 | SPUTTERING APPARATUS - A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode. | 06-28-2012 |
20120160164 | VACUUM PROCESSING APPARATUS AND PROCESSING METHOD USING THE SAME - A vacuum processing apparatus includes: a process chamber capable of reducing a pressure; a transport unit, provided in the process chamber, for transporting a plurality of substrates; a gas supply unit for supplying a gas to process the substrates in the process chamber; a substrate processing unit for processing the substrates placed on the transport unit; a detection unit for detecting a substrate interval between adjacent substrates out of the plurality of substrates; and a control unit for controlling, based on the substrate interval detected by the detection unit, a supply amount of the gas to be supplied by the gas supply unit. | 06-28-2012 |
20120152736 | REACTIVE SPUTTERING APPARATUS - A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering. | 06-21-2012 |
20120145724 | VACUUM CONTAINER - A vacuum container which has a seal member in fitting faces of the vacuum container to be divided into half, has a labyrinth forming device inside the vacuum container in the fitting faces, and a labyrinth forming device has a concave member in which a concave portion is formed, a convex member which has a convex portion arranged to have a slight gap between the inner surface of the concave portion, and a vertically moving mechanism which operates the convex member in a direction close to the concave member. | 06-14-2012 |
20120145671 | PLASMA PROCESSING APPARATUS AND DEVICE MANUFACTURING METHOD - The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthen the replacement cycle of the discharge vessel. | 06-14-2012 |
20120145535 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM - A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter. | 06-14-2012 |
20120137972 | FILM FORMING APPARATUS - A film forming apparatus which forms a film on a long substrate includes a film forming unit, a transport unit which transports the long substrate, a supply portion which supplies an inspection substrate onto the long substrate, and a substrate recovery portion which recovers the inspection substrate that was placed on the long substrate and that has a film formed thereon by the film forming unit. | 06-07-2012 |
20120118733 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus includes a process chamber, a substrate conveyer provided in the process chamber to convey a substrate, a target holder provided in the process chamber to hold a flat target, a magnet unit arranged on a back side of the target holder, an electric power supply configured to supply power to the target holder, a controller configured to control the electric power supply and the substrate conveyer, and a target holder moving unit configured to move the target holder in a plane substantially parallel to a surface of the target holder, wherein the controller is configured to drive the substrate conveyer to convey the substrate and to drive the target holder moving unit to move the target holder while causing the electric power supply to supply power to the target holder. | 05-17-2012 |
20120107072 | SUBSTRATE TRANSPORT APPARATUS, ELECTRONIC DEVICE MANUFACTURING SYSTEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate transport apparatus comprises a substrate holder capable of holding a substrate, a link unit which extends/retracts the substrate holder, a driving unit which generates a driving force to operate the link unit, a guide bar provided to one of the substrate holder and the link unit; and a support unit which is provided to the other of the substrate holder and the link unit, and slidably supports the guide bar when the substrate holder moves by the operation of the link unit. | 05-03-2012 |
20120104274 | ION BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses | 05-03-2012 |
20120103934 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - The present invention aims to prevent decreases in etching rate due to adhesion of an etched film to a substrate holder. | 05-03-2012 |
20120097847 | ION DETECTOR FOR MASS SPECTROMETRY, METHOD FOR DETECTING ION, AND METHOD FOR MANUFACTURING ION DETECTOR - The present disclosure provides an ion detector for improving the effect of electric field for pulling in an ion to be detected to a first-stage electrode of a secondary electron multiplier (SEM), and improving the effect of a stray light reduction. In one example embodiment, an ion detector includes a SEM, and a lead-in electrode for pulling in an ion to a first-stage electrode side of the SEM. At least one of the area of the lead-in electrode and a potential difference between the lead-in electrode and neighboring electrodes of the lead-in electrode, the neighboring electrode being an electrode not of the SEM, is set so that the light amount of internal-stray light generated inside the detector entering the first-stage electrode is not more than that of external-stray light generated outside the detector entering the first-stage electrode, when an ion is introduced into the detector. | 04-26-2012 |
20120097533 | DOUBLE-LAYER SHUTTER SPUTTERING APPARATUS - A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets. | 04-26-2012 |
20120089243 | IDENTIFICATION INFORMATION SETTING DEVICE AND IDENTIFICATION INFORMATION SETTING METHOD - The present invention provides an identification information setting device and an identification information setting method that can easily set identification information for a transfer chamber. In an embodiment of the present invention, a storage portion ( | 04-12-2012 |
20120080630 | FLOW PATH OPENING/CLOSING APPARATUS - There is provided a flow path opening/closing apparatus that can enhance airtightness so as to be capable of being used for a high-speed processing under a high pressure, while keeping advantages, which are a non-contact valve element, high exhausting capability, and high response speed. A butterfly valve includes a body having a flow path through which a fluid flows; and a valve element that can rotate in the flow path about a rotation axis vertical to the flow path, wherein a seal length extending wall for extending a seal length in a direction of the flow path at a gap, which is formed between the body and the valve element when the valve element is fully closed, is formed to project along an edge of the valve element. | 04-05-2012 |
20120073960 | MAGNETRON SPUTTERING APPARATUS AND ELECTRONIC COMPONENT MANUFACTURING METHOD - A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target. | 03-29-2012 |
20120070968 | SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING CRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE - The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate ( | 03-22-2012 |
20120070693 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane. | 03-22-2012 |
20120045591 | PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE - A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder. | 02-23-2012 |
20120043617 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. | 02-23-2012 |
20120031748 | FILM FORMING APPARATUS AND FILM FORMING METHOD - The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means. | 02-09-2012 |
20120024075 | CAPACITANCE PRESSURE SENSOR - The present invention provides a capacitance pressure sensor having a traces structure which can stably measure a pressure. A capacitance pressure sensor according to an embodiment of the present invention includes: a substrate having a first insulation layer to a third insulation layer; a diaphragm placed to face the substrate so that a reference chamber is formed between the diaphragm and the substrate; a first electrode on the substrate 1, facing to the diaphragm; a second electrode on the diaphragm, which is disposed so as to face the first electrode; a trace connected to the first electrode, for electrically connecting the first electrode to the outside; and a second trace connected to the second electrode, for electrically connecting the second electrode to the outside. The traces penetrate the first insulation layer from the reference chamber side of the substrate toward the side opposing to the reference chamber of the substrate, and also are bent between each of the insulation layers. | 02-02-2012 |
20120014770 | SUBSTRATE CONVEYANCE APPARATUS, ELECTRONIC DEVICE MANUFACTURING SYSTEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A substrate conveyance apparatus includes a first driving shaft, an arm portion having one end connected to the first driving shaft, a substrate holding unit capable of holding a substrate, and a connecting portion that connects the other end of the arm portion and the substrate holding unit. The connecting portion includes a rotating support portion that supports the substrate holding unit rotatably with respect to the arm portion, and a moving unit that moves the substrate holding unit upward or downward with respect to the arm portion in the direction of the rotating shaft about which the substrate holding unit is rotated by the rotating support portion. | 01-19-2012 |
20120006675 | FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder ( | 01-12-2012 |
20120006257 | SUBSTRATE HOLDER STOCKER DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE HOLDER MOVING METHOD USING THE SUBSTRATE HOLDER STOCKER DEVICE - A substrate holder stocker device capable of reducing foot print is provided. The device includes: a movable table A which holds a plurality of substrate holders side by side in a plate thickness direction thereof and moves back and forth; a movable table B which is provided parallel to the movable table A and holds a plurality of the substrate holders side by side in a plate thickness direction thereof, and which moves back and forth; and an inter-table transfer mechanism for allowing the substrate holder which is held by one of the movable tables A and B stopped at predetermined positions to be held by the other of the movable tables A and B. | 01-12-2012 |
20110318848 | FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER - MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier, which is prepared by the metallic Mg deposition followed by the oxidation process or reactive sputtering, is amorphous or microcrystalline with poor (001) out-of-plane texture. In the present invention at least only the ferromagnetic reference layer or both of the ferromagnetic reference and free layer is proposed to be bi-layer structure having a crystalline preferred grain growth promotion (PGGP) seed layer adjacent to the tunnel barrier. This crystalline PGGP seed layer induces the crystallization and the preferred grain growth of the MgO tunnel barrier upon post-deposition annealing. | 12-29-2011 |
20110315346 | COOLING APPARATUS AND HEATING APPARATUS - The present invention provides a cooling apparatus capable of improving a cooling efficiency and realizing a high speed cooling process. The present invention also provides a heating apparatus capable of improving a heating efficiency of a substrate and heating the substrate at high speed. A cooling apparatus according to one embodiment of the present invention includes a chamber; a substrate carrier for holding a substrate | 12-29-2011 |
20110313562 | DATA COLLECTION SYSTEM FOR VACUUM PROCESSING APPARATUS - A control device of a transfer module and a process module in a vacuum processing apparatus collects state data from the modules. The control device has a state data set including data on the entire module, updates its own state data in the set of its own state data acquired at acquisition timing and transmits it to a data collection device at transmission timing. A plurality of control devices is connected in a loop or in a chain to the data collection device; a data transmission interval is shorter than a data collection interval, and entire transmission synchronization is set to be less than twice an interval of acquisition timing. | 12-22-2011 |
20110312179 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The present invention provides a substrate processing method and a substrate processing apparatus, which are capable of forming a high-k dielectric film with few trapping levels due to oxygen deficiencies and hot carriers by a sputtering method in one and the same vacuum vessel. The substrate processing method according to a first embodiment of the present invention includes: a first step of heating a to-be-processed substrate ( | 12-22-2011 |
20110312178 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY ELEMENT AND SPUTTERING APPARATUS - The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer ( | 12-22-2011 |
20110309050 | PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD AND METHOD OF MANUFACTURING ELEMENT INCLUDING SUBSTRATE TO BE PROCESSED - The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel ( | 12-22-2011 |
20110308544 | CLEANING METHOD OF PROCESSING CHAMBER OF MAGNETIC FILM, MANUFACTURING METHOD OF MAGNETIC DEVICE, AND SUBSTRATE TREATMENT APPARATUS - The present invention provides a manufacturing method of a multilayer film, a manufacturing method of a magnetoresistance effect device, and a substrate treatment apparatus, capable of shortening the time of a cleaning step. In one embodiment of the present invention, the inside of an etching apparatus is cleaned by plasma of a mixed gas containing H | 12-22-2011 |
20110303527 | SUBSTRATE PROCESSING APPARATUS AND APPARATUS AND METHOD OF MANUFACTURING MAGNETIC DEVICE - According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber. | 12-15-2011 |
20110297537 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member. | 12-08-2011 |
20110290638 | SPUTTER DEVICE AND METHOD OF MANUFACTURING MAGNETIC STORAGE MEDIUM - The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate ( | 12-01-2011 |
20110287177 | VACUUM PROCESSING APPARATUS, SUBSTRATE ROTATION APPARATUS, AND DEPOSITION METHOD - An apparatus for rotating a substrate having a center hole, comprises a pickup member configured to hold the substrate by holding an edge of the center hole, and a driving unit configured to drive the pickup member, wherein the driving unit is configured to insert the pickup member into the center hole so as not to bring the pickup member into contact with the substrate, to drive the pickup member upward so that the pickup member holds the edge of the center hole from below, and thereupon to rotate the pickup member so as to rotate the substrate, and in rotating the substrate, the driving unit rotates the pickup member about a rotation axis which is perpendicular to a principal surface of the substrate and passes through the center of the substrate. | 11-24-2011 |
20110286826 | SUBSTRATE SUPPORT APPARATUS AND VACUUM PROCESSING APPARATUS - A substrate support apparatus which can support a substrate having a center hole, comprises a support portion which can support the substrate. The support portion includes a support groove with a cross-sectional shape in which a groove width gradually increases in a counter-gravitational direction, and a width of the support groove between two end portions is larger than a width of the support groove at the center thereof. | 11-24-2011 |
20110284497 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - A plasma processing apparatus includes a discharge window made of a dielectric material, a discharge chamber which is grounded and includes an opening formed at its one end and the discharge window provided at its other end facing the opening, a gas supply system which supplies a gas into the discharge chamber, a high-frequency power application mechanism which applies a high-frequency power to the gas to generate a plasma inside the discharge chamber, a substrate holder which can hold a substrate while facing the discharge window on the outer side of the discharge chamber, a shielding member which partially shields the plasma that impinges on the substrate, and a supporting member which supports the shielding member. The supporting member is grounded and fixed on the shielding member at a position which is farther from the substrate than the shielding member and different from that of the discharge window. | 11-24-2011 |
20110279127 | COLD CATHODE IONIZATION VACUUM GAUGE, VACUUM PROCESSING APPARATUS HAVING THE SAME, DISCHARGE STARTING AUXILIARY ELECTRODE USED FOR THE SAME, AND METHOD OF MEASURING PRESSURE USING THE SAME - The present invention provides a cold cathode ionization vacuum gauge that can trigger discharge in a short time even after a long period of operation. The cold cathode ionization vacuum gauge of an embodiment of the present invention includes an anode, a cathode disposed so as to form a discharge space together with the anode, and a discharge starting auxiliary electrode disposed in the discharge space and electrically connected to the cathode. The discharge starting auxiliary electrode has an electrode part disposed in parallel with an axially longitudinal direction of the anode. | 11-17-2011 |
20110272278 | SPUTTERING APPARATUS - The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source. | 11-10-2011 |
20110266139 | FILM FORMING APPARATUS AND METHOD OF PRODUCING SUBSTRATE USING SAME - The present invention provides a film forming apparatus that forms a film on a substrate (s) | 11-03-2011 |
20110262634 | METHOD OF MANUFACTURING MAGNETORESISTIVE DEVICE AND APPARATUS FOR MANUFACTURING THE SAME - A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device. | 10-27-2011 |
20110259733 | MAGNETIC FIELD CONTROL FOR UNIFORM FILM THICKNESS DISTRIBUTION IN SPUTTER APPARATUS - When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape. | 10-27-2011 |
20110256642 | MANUFACTURING METHOD OF MAGNETO-RESISTANCE EFFECT ELEMENT - The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150° C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure. | 10-20-2011 |
20110253953 | RACK AND PINION MECHANISM, VACUUM PROCESSING APPARATUS, METHOD OF DRIVING AND CONTROLLING RACK AND PINION MECHANISM, DRIVE CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention provides a rack and pinion mechanism which avoids collision between respective tooth tops of a rack gear and a pinion gear due to a phase shift between the rack gear and the pinion gear with a simple mechanism and meshes the rack gear and the pinion gear smoothly. | 10-20-2011 |
20110253048 | WAFER HOLDER AND METHOD OF HOLDING A WAFER - A wafer holder including a wafer stage and a wafer stage outer-ring surrounding the wafer stage wherein the wafer stage has a diameter smaller than the diameter of a wafer loaded on the wafer stage, the wafer stage outer-ring has an inner diameter at the upper side of the outer-ring which is larger than the diameter of the wafer loaded on the wafer stage, and the upper surface of the outer-ring lies above the upper surface of the wafer loaded on the wafer stage. | 10-20-2011 |
20110253037 | VACUUM HEATING AND COOLING APPARATUS - The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber. | 10-20-2011 |
20110227018 | MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art and a method of manufacturing the same. | 09-22-2011 |
20110223346 | SPUTTERING DEVICE AND SPUTTERING METHOD - A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate ( | 09-15-2011 |
20110217467 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device. | 09-08-2011 |
20110210405 | METAL NITRIDE FILM, SEMICONDUCTOR DEVICE USING THE METAL NITRIDE FILM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less. | 09-01-2011 |
20110209986 | SPUTTERING APPARATUS, SPUTTERING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit. | 09-01-2011 |
20110209554 | COMBINED TYPE PRESSURE GAUGE, AND MANUFACTURING METHOD OF COMBINED TYPE PRESSURE GAUGE - The present invention allows manufacturing of a capacitive diaphragm pressure gauge and a Pirani pressure gauge on a single silicon substrate, which makes it possible to reduce the manufacturing cost by the miniaturization of products and mass production. According to an embodiment of the present invention, the manufacturing method of a combined type pressure gauge is a manufacturing method of a combined type pressure gauge including a capacitive diaphragm pressure gauge and a Pirani pressure gauge, the method including a groove-forming step of forming a first groove portion and a second groove portion on a first surface side of a silicon substrate by etching, and a bonding step to bond a glass substrate to the silicon substrate so as to cover the first groove portion and the second groove portion on the first surface side of the silicon substrate. | 09-01-2011 |
20110203734 | PLASMA PROCESSING APPARATUS, MAGNETORESISTIVE DEVICE MANUFACTURING APPARATUS, MAGNETIC THIN FILM FORMING METHOD, AND FILM FORMATION CONTROL PROGRAM - The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. | 08-25-2011 |
20110198033 | SHUTTER DEVICE AND VACUUM PROCESSING APPARATUS - A shutter device having two shutter plates, which shield between an IBS and a substrate, is configured such that the two shutter plates are disposed at symmetrical positions across the IBS and can perform an opening/closing operation in synchronization with a rotation of a rotation-link-member which is rotatably disposed surrounding the IBS. With the configuration, the shutter device can reduce an offset of a shield range in the opening/closing operation. | 08-18-2011 |
20110180401 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target. | 07-28-2011 |
20110174221 | Surface processing apparatus - This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced. | 07-21-2011 |
20110168545 | MULTILAYER-FILM SPUTTERING APPARATUS AND METHOD OF FORMING MULTILAYER FILM - Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit ( | 07-14-2011 |
20110168086 | SUBSTRATE HOLDER MOUNTING DEVICE AND SUBSTRATE HOLDER CONTAINER CHAMBER - A substrate holder mounting device is provided that is compact and has a simple structure. The substrate holder mounting device according to the present invention is provided with: a first and a second mounting mechanisms ( | 07-14-2011 |
20110165775 | THIN FILM FORMING METHOD - According to the present invention, a thin film having a desired thickness is formed on an inner sidewall of a step with excellent step coverage in a film forming step and an etching step at least once, respectively. In an embodiment of the present invention, a target material is deposited on a substrate ( | 07-07-2011 |
20110162959 | VACUUM PUMPING SYSTEM, SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND OPERATING METHOD OF VACUUM PUMPING SYSTEM - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas. | 07-07-2011 |
20110156514 | VACUUM ACTUATOR AND SUBSTRATE TRANSPORT ROBOT - A vacuum actuator includes a vacuum partition wall, the interior of which can be evacuated to a vacuum, a rotor supported by the vacuum partition wall to be free to rotate, a permanent magnet provided on the outer peripheral surface of the rotor, a coil opposed to the permanent magnet, and a stator provided with the coil. The stator and the vacuum partition wall are formed integrally with each other. | 06-30-2011 |
20110156128 | DIELECTRIC FILM MANUFACTURING METHOD - The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing method according to an embodiment of the present invention is forms a dielectric film of a metal oxide mainly containing Al, Si, and O on a substrate, and comprises steps of forming the metal oxide having an amorphous structure in which a molar fraction between an Al element and a Si element, Si/(Si+Al), is 006-30-2011 | |
20110155691 | MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM - The present invention provides a manufacturing method of a magnetic recording medium capable of reducing the deterioration of a recording layer and improving the Duty cycle of the recording layer. An embodiment of the present invention is a manufacturing method of a patterned recording medium such as BPM (Bit Patterned Media) and DTM (Discrete Track Media). The manufacturing method has a deposition step of depositing a resist protective film on a resist pattern formed on a workpiece containing a recording layer, and a recording layer processing step of processing the recording layer into a pattern shape by dry etching using the resist pattern and the resist protective film as a mask. | 06-30-2011 |
20110155569 | COOLING SYSTEM - A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed. | 06-30-2011 |
20110155561 | REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS - The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. | 06-30-2011 |
20110155059 | THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND SHIELD COMPONENT - The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield. | 06-30-2011 |
20110155054 | VACUUM PROCESSING APPARATUS - In a vacuum processing apparatus, a substrate chuck mechanism member is attached to a substrate holder provided in a vacuum processing chamber, includes a shaft member, first and second coil springs that are provided at the two ends, respectively, of the shaft member, and a substrate chuck plate provided at the end of the shaft member, and is additionally attached to the substrate holder using the substrate chuck plate by elastic biasing of the first coil spring. The holding state of the substrate on the substrate holder is changed by the expansion/contraction actions of the first and second coil springs in accordance with the reciprocal movement of the substrate holder. | 06-30-2011 |
20110147982 | GATE VALVE, FILM MANUFACTURING APPARATUS, AND FILM MANUFACTURING METHOD - A film manufacturing apparatus includes a feed device, a take-up device, and a processing unit to perform a predetermined process for a film. The feed device, the take-up device, and the processing unit are arranged in vacuum chambers having opening portions through which a film can pass. Each opening portion includes a gate valve that can hermitically seal the vacuum chamber by sealing the film while clamping it. A recess portion is formed in the seal member of the valve body of each gate valve. The recess portion has a linear portion that is a size larger than the width of the film in a direction perpendicular to the transport direction of the film and the moving direction of the valve body. | 06-23-2011 |
20110147200 | Ion Beam Generator, and Substrate Processing Apparatus and Production Method of Electronic Device Using The Ion Beam Generator - An ion beam generator generates plasma in a discharge tank | 06-23-2011 |
20110147199 | SPUTTERING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus comprises a substrate holder, and a screening member configured to screen a substrate mount surface of a surface of the substrate holder. The screening member comprises a first screening member configured to rotate about an axis in a first direction perpendicular to the substrate mount surface and screen at least a first area, and a second screening member configured to rotate about the axis and screen at least a second area. The first and second screening members are configured to be rotated to move between a screening position at which the first screening member screens at least the first area and the second screening member screens at least the second area and a retreat position at which the first and second screening members retract from an area above the substrate mount surface and overlap each other. | 06-23-2011 |
20110147198 | VACUUM PUMPING SYSTEM, OPERATING METHOD OF VACUUM PUMPING SYSTEM, REFRIGERATOR, VACUUM PUMP, OPERATING METHOD OF REFRIGERATOR, OPERATION CONTROL METHOD OF TWO-STAGE TYPE REFRIGERATOR, OPERATION CONTROL METHOD OF CRYOPUMP, TWO-STAGE TYPE REFRIGERATOR, CRYOPUMP, SUBSTRATE PROCESSING APPARATUS, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas. | 06-23-2011 |
20110143460 | METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art. | 06-16-2011 |
20110139998 | ION BEAM GENERATOR - [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. | 06-16-2011 |
20110139606 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, SPUTTER DEPOSITION CHAMBER, APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING SPUTTER DEPOSITION CHAMBER, PROGRAM AND STORAGE MEDIUM - The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle. | 06-16-2011 |
20110135426 | VACUUM TRANSFER APPARATUS - Disclosed is a vacuum transfer apparatus, which can increase a transfer amount in a vertical direction of a transferred object and can reduce a volume required for placement of the vacuum transfer apparatus, whereby contributing to the size reduction of the vacuum transfer apparatus. | 06-09-2011 |
20110124200 | METHOD AND APPARATUS OF PLASMA TREATMENT - The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder ( | 05-26-2011 |
20110121927 | MAGNETIC FIELD GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS - A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets ( | 05-26-2011 |
20110121317 | ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H | 05-26-2011 |
20110120858 | VACUUM PROCESSING APPARATUS AND OPTICAL COMPONENT MANUFACTURING METHOD - To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder. A vacuum processing apparatus which processes a processing object in a vacuum vessel includes a susceptor which has a surface having concavity and convexity, that is opposite to its surface on which the processing object is mounted, and movably holds the processing object, a holder which has a surface having concavity and convexity which mesh with those of the susceptor, a driving mechanism which holds the holder to be movable to a first state or a second state, and a control means for moving the susceptor while the holder is held in the first state to mesh the surface, having the concavity and convexity, of the susceptor with the surface, having the concavity and convexity, of the holder and thereby connect the susceptor and the holder to each other, moving the holder, to which the susceptor is connected, to the second state and processing the processing object, and moving the holder to the first state again and moving the susceptor so that the surface, having the concavity and convexity, of the susceptor is separated from the surface, having the concavity and convexity, of the holder. | 05-26-2011 |
20110094875 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME - A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure. | 04-28-2011 |
20110089023 | PLASMA PROCESSING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space. | 04-21-2011 |
20110086439 | METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT - A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a plasma of an inert gas to etch the metal layer to have a second thickness smaller than the first thickness, and an oxidation step of oxidizing the metal layer having undergone the plasma treatment to form a metal oxide which forms a tunnel barrier. | 04-14-2011 |
20110084348 | MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art. | 04-14-2011 |
20110081732 | Method of Manufacturing Magnetic Tunnel Junction Device and Apparatus for Manufacturing the Same - A method of manufacturing a magnetic tunnel junction device includes a barrier layer forming step of forming a tunnel barrier layer. The barrier layer forming step comprises a step of depositing a first metal layer, an oxygen surfactant layer forming step of forming an oxygen surfactant layer on the first metal layer, a step of deposing a second metal layer above the first oxygen surfactant layer, and an oxidation step of oxidizing the first metal layer and the second metal layer to form a metal oxide layer. | 04-07-2011 |
20110068084 | SUBSTRATE HOLDER AND SUBSTRATE TEMPERATURE CONTROL METHOD - A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system. | 03-24-2011 |
20110064880 | VACUUM PROCESSING APPARATUS, VACUUM PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate. | 03-17-2011 |
20110064877 | GAS SUPPLY DEVICE, VACUUM PROCESSING APPARATUS AND METHOD OF PRODUCING ELECTRONIC DEVICE - To provide a gas supply device | 03-17-2011 |
20110064642 | DIELECTRIC FILM WITH METALLIC OXYNITRIDE - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 03-17-2011 |
20110052349 | VACUUM PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD - A robot according to this invention includes a driving mechanism, a first arm rotatably connected to the driving mechanism, a second arm rotatably connected to the first arm, and an X-shaped end effector rotatably disposed at the distal end of the second arm. Of the four distal ends of the end effector, two distal ends include holding units which can hold substrates in one direction, and the remaining two distal ends include holding units which can hold substrates in the opposite direction. | 03-03-2011 |
20110051481 | FREQUENCY CONVERTER - The present invention provides a frequency converter including a frequency conversion device capable of accommodating a Si-series MMIC and also a GaAs-series MMIC by using a magneto-resistance element. A frequency converter according to an embodiment of the present invention includes: a frequency conversion device having a magneto-resistance element with a magnetization free layer, an intermediate layer, and a magnetization pinned layer; a magnetic field application mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the above frequency conversion device for receiving an external input signal. Further, the local oscillator includes a magneto-resistance element capable of generating the local oscillation signal by outputting an AC voltage according to a resistance change thereof. | 03-03-2011 |
20110051115 | Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus - The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights. | 03-03-2011 |
20110042209 | SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF - Disclosed is a sputtering device wherein a target ( | 02-24-2011 |
20110041932 | GAS SUPPLY DEVICE AND VACUUM PROCESSING APPARATUS - A gas supply device includes a chamber frame, a door which is attached to the chamber frame to be able to open and close the door, and has a cathode, a door-side introduction block which is attached to the door and has a gas flow path for supplying discharge gas to the cathode, and a chamber-side introduction block which is attached to the chamber frame and has a gas flow path for supplying discharge gas introduced outside from the chamber frame to the door-side introduction block. When the door is closed, the gas flow path of the door-side introduction block and the gas flow path of the chamber-side introduction block communicate with each other. | 02-24-2011 |
20110032645 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction. | 02-10-2011 |
20110031107 | METHOD OF BURYING METAL AND APPARATUS OF DEPOSITING METAL IN CONCAVE PORTION - The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object. | 02-10-2011 |
20110027979 | DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING DIELECTRIC FILM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10 | 02-03-2011 |
20110027051 | DRIVING DEVICE AND VACUUM PROCESSING APPARATUS - A magnetic screw driving device | 02-03-2011 |
20110021000 | METHOD FOR MANUFACTURING RESISTANCE CHANGE ELEMENT - The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O | 01-27-2011 |
20110004334 | Substrate Processing System and Substrate Processing Device - The present invention provides a substrate processing system capable of extending and changing a substrate processing module easily according to changes of processing contents for a substrate. An embodiment of the present invention is the substrate processing system including a main device ( | 01-06-2011 |
20100330813 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 12-30-2010 |
20100328997 | PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM PROCESSING APPARATUS, AND PHASE-CHANGE MEMORY ELEMENT MANUFACTURING METHOD - A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer. | 12-30-2010 |
20100326818 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING APPARATUS - The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening. | 12-30-2010 |
20100316890 | MAGNETIC TUNNEL JUNCTION DEVICE WITH MAGNETIC FREE LAYER HAVING SANDWICH STRUCTURE - On the substrate ( | 12-16-2010 |
20100310902 | DRY ETCHING METHOD, MAGNETO-RESISTIVE ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaO | 12-09-2010 |
20100304504 | PROCESS AND APPARATUS FOR FABRICATING MAGNETIC DEVICE - Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N | 12-02-2010 |
20100301869 | COLD CATHODE IONIZATION VACUUM GAUGE, AUXILIARY DISCHARGE STARTING ELECTRODE, AND VACUUM PROCESSING APPARATUS - The present invention provides a cold cathode ionization vacuum gauge, an auxiliary discharge starting electrode plate, and a vacuum processing apparatus which have simple configurations and, even after long-term-use, which allow discharge to be initiated in a short-period of time and also to be performed stably after the start of the discharge. A cold cathode ionization vacuum gauge according to one embodiment of the present invention includes: an anode; a gauge head chamber (cathode) placed in such a manner as to form a discharge space together with the anode; and a protruding configured so that, in voltage-application to the anode and the cathode, an electric field should be concentrated at the protruding portion to a larger extent than an electric field at the gauge head chamber is. The protruding portion is provided inside the discharge space in such a manner that the protruding portion has a floating potential. | 12-02-2010 |
20100301008 | PROCESS AND APPARATUS FOR FABRICATING MAGNETIC DEVICE - Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers in the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N | 12-02-2010 |
20100294656 | PLASMA PROCESSING APPARATUS - A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode. | 11-25-2010 |
20100284121 | ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric board having an upper surface on which a plurality of projections for supporting a substrate on top surfaces and recesses surrounding the projections are formed, an electrode formed inside the dielectric board, and an external power supply which applies a voltage to the electrode. The dielectric board includes a conductor film formed on at least the top surface of each projection, and has a three-dimensional structure which causes the conductor film to generate a Johnson-Rahbeck force between the substrate and conductor film when a voltage is applied to the electrode. | 11-11-2010 |
20100276275 | METHOD OF GENERATING FINE METAL PARTICLES, METHOD OF MANUFACTURING METAL-CONTAINING PASTE, AND METHOD OF FORMING THIN METAL FILM INTERCONNECTION - There is provided a method or the like which safely generates fine metal particles at a low cost without using a chlorine gas. Fine copper particles ( | 11-04-2010 |
20100273387 | Processing Apparatus and Method of Manufacturing Electron Emission Element and Organic EL Display - Disclosed is a processing apparatus which can realize highly fine batch pattern film formation for a mask, which is significantly increased in weight according to the demand for increasing the size of an object to be processed, whereby leading to a possibility of reduction in the alignment accuracy of a pattern. | 10-28-2010 |
20100264959 | FREQUENCY CONVERSION APPARATUS AND FREQUENCY CONVERSION METHOD - To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal. | 10-21-2010 |
20100260947 | METHOD AND APPARATUS OF PLASMA TREATMENT - The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder ( | 10-14-2010 |
20100259273 | COLD CATHODE IONIZATION VACUUM GAUGE, VACUUM PROCESSING APPARATUS INCLUDING SAME AND DISCHARGE STARTING AUXILIARY ELECTRODE - The present invention provides a cold cathode ionization vacuum gauge that can trigger discharge in a short time even in the case of use over a long period of time without needing a complicated apparatus. It has the structure in which a rod-like anode is located in an internal part of a measuring element container (cathode) having a discharge space with one end thereof which is sealed, and a discharge starting auxiliary electrode is mounted on this anode. The discharge starting auxiliary electrode triggers the discharge in a short time by the formation of a carbon nanotube layer on a discharge starting auxiliary electrode plate. | 10-14-2010 |
20100258432 | SPUTTERING APPARATUS, SPUTTER DEPOSITION METHOD, AND ANALYSIS APPARATUS - A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field. | 10-14-2010 |
20100247807 | ELECTRON GUN EVAPORATION APPARATUS AND FILM FORMATION METHOD USING THE ELECTRON GUN EVAPORATION APPARATUS - An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position. | 09-30-2010 |
20100244192 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 09-30-2010 |
20100243884 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - A mass spectrometer includes an ionization chamber ( | 09-30-2010 |