| Cambridge NanoTech Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120141676 | ALD COATING SYSTEM - An ALD coating system ( | 06-07-2012 |
| 20120064245 | ALD SYSTEMS AND METHODS - A gas deposition system ( | 03-15-2012 |
| 20110311726 | METHOD AND APPARATUS FOR PRECURSOR DELIVERY - An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates. | 12-22-2011 |
| 20100247763 | REACTION CHAMBER WITH REMOVABLE LINER - A reaction chamber assembly for thin film deposition processes or the like includes an outer wall assembly for enclosing an outer volume and a removable liner installed into the outer volume through an outer aperture for preventing precursors or reactants from coming into contact with internal surfaces of the outer wall assembly and forming thin film layers thereon. The removable liner encloses a reaction chamber and includes substrate support trays or the like for supporting substrates being coated. Thin film layers are formed onto internal surfaces of the removable liner instead of onto surfaces of the outer wall assembly. The removable liner may be disposable or may comprise stainless steel, which can be removed when contaminated, cleaned by abrasive blasting such as bead blasting, and replaced. Two removable liners can be used to periodically swap removable liners and clean one of the liners while the other is in service with minimal disruption to production coating schedules. Other removable cleanable elements such as input and output plenums, door liners and conduits comprising stainless steel can be periodically removed and cleaned by abrasive blasting. | 09-30-2010 |
| 20100183825 | PLASMA ATOMIC LAYER DEPOSITION SYSTEM AND METHOD - An improved gas deposition chamber includes a hollow gas deposition volume formed with a volume expanding top portion and a substantially constant volume cylindrical middle portion. The hollow gas deposition volume may include a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside gas deposition chamber with a substrate support surface positioned in the constant volume cylindrical middle portion. The volume expanding top portion reduces gas flow velocity between gas input ports and the substrate support surface. The aerodynamic shape of the substrate support chuck reduces drag and helps to promote laminar flow over the substrate support surface. The volume reducing lower portion helps to increase gas flow velocity after the gas has past the substrate support surface. The improved gas deposition chamber is configurable to 200 mm diameter semiconductor wafers using ALD and or PALD coating cycles. An improved coating method includes expanding process gases inside the deposition chamber prior to the process gas reaching surfaces of a substrate being coated. The method further includes compressing the process gases inside the deposition chamber after the process gas has flowed past surfaces of the substrate being coated. | 07-22-2010 |
| 20100166955 | SYSTEM AND METHOD FOR THIN FILM DEPOSITION - A reaction chamber assembly suitable for forming thin film deposition layers onto solid substrates includes a reaction chamber and an input plenum for receiving source material from gas source containers and delivering a flow of source material into the reaction chamber uniformly distributed across a substrate support width. An output plenum connected between the reaction chamber and a vacuum pump uniformly removes an outflow of material from the reaction chamber across the substrate support width. The input plenum is configured to expand a volume of the source material and deliver the source material to the substrate support area with uniform source material flow distribution across the substrate support width. The output plenum is configured to remove the outflow material across the entire substrate support width and to compress the volume of outflow material prior to the outflow material exiting the output plenum. The resulting source material flow over substrates supported in the substrate support area is uniformly distributed across the substrate support width and unidirectional with a uniform flow velocity. The configuration of the reaction chamber assembly reduces pump down times. | 07-01-2010 |
