| Cabot Microelectronics Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20120094489 | CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES - The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed. | 04-19-2012 |
| 20110247996 | DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT - The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition. | 10-13-2011 |
| 20110240002 | CUTTING FLUID COMPOSITION FOR WIRESAWING - The present invention provides an aqueous wiresaw cutting fluid composition that reduces the amount of hydrogen produced during a wiresaw cutting process. The composition is comprised of an aqueous carrier, a particulate abrasive, a thickening agent, and a hydrogen suppression agent. | 10-06-2011 |
| 20100193470 | POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS MEMORY DISKS - The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 08-05-2010 |
| 20100062601 | METHODS FOR POLISHING ALUMINUM NITRIDE - The present invention provides a method for polishing an aluminum nitride substrate. The method comprises abrading a surface of the aluminum nitride substrate with a basic, aqueous polishing composition, which comprises an abrasive (e.g., colloidal silica), an oxidizing agent (e.g., hydrogen peroxide), and an aqueous carrier. The methods of the invention provide for substantially improved polishing rates relative to conventional methods that do not utilize an oxidizing agent in the polishing slurry. | 03-11-2010 |
| 20100009537 | METHOD OF POLISHING NICKEL-PHOSPHOROUS - The invention is directed to a method of chemically-mechanically polishing a a surface of a substrate, comprising contacting a surface of a substrate comprising nickel-phosphorous with a chemical-mechanical polishing composition comprising wet-process silica, an agent that oxidizes nickel-phosphorous, and an aminopolycarboxylic acid, wherein the polishing composition has a pH of about 1 to about 5, and abrading at least a portion of the nickel-phosphorous to polish the substrate. | 01-14-2010 |
| 20090291559 | STABLE, HIGH RATE SILICON SLURRY - The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition. | 11-26-2009 |
| 20090236559 | COMPOSITIONS FOR POLISHING ALUMINUM/COPPER AND TITANIUM IN DAMASCENE STRUCTURES - The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an α-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate. | 09-24-2009 |
| 20090232279 | X-RAY SOURCE WITH NONPARALLEL GEOMETRY - An improved electron bombardment device includes a first tubular member for containing a target material and a second tubular member surrounding the first tubular member, leaving a space between the first and second tubular members. In an embodiment of the invention, the second tubular member is an electron emitting material, and the bombardment device includes a voltage application means for accelerating emitted electrons from the second tubular member towards the first tubular member. In a further embodiment of the invention, the second tubular member comprises a thermionic electron emitting material. In an alternative embodiment, the second tubular member comprises a field electron emitting material. | 09-17-2009 |
| 20090173717 | COMPOSITION AND METHOD FOR POLISHING NICKEL-PHOSPHOROUS-COATED ALUMINUM HARD DISKS - The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic acid, hydrogen peroxide, and water. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 07-09-2009 |
| 20090152240 | CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME - The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water. | 06-18-2009 |
| 20090137124 | POLISHING COMPOSITION AND METHOD FOR HIGH SILICON NITRIDE TO SILICON OXIDE REMOVAL RATE RATIOS - The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide. | 05-28-2009 |
| 20090124173 | COMPOSITIONS AND METHODS FOR RUTHENIUM AND TANTALUM BARRIER CMP - This invention provides a chemical-mechanical polishing composition comprising an abrasive, an aqueous carrier, an oxidizing agent having a standard reduction potential of greater than 0.7 V and less than 1.3 V relative to a standard hydrogen electrode, and optionally a source of borate anions, with the proviso that when the oxidizing agent comprises a peroxide other than perborate, perphosphate, or percarbonate, the chemical-mechanical polishing composition further comprises a source of borate anions, wherein the pH of the chemical-mechanical polishing composition is between about 7 and about 12. The invention also provides a method of polishing a substrate with the aforementioned chemical-mechanical polishing composition. | 05-14-2009 |
| 20090090696 | SLURRIES FOR POLISHING OXIDE AND NITRIDE WITH HIGH REMOVAL RATES - The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer comprising (A) a cationic monomer comprising a quaternary amino group and (B) a nonionic monomer, and (c) water. The invention also provides a method of polishing a substrate using the aforementioned polishing composition. | 04-09-2009 |
| 20090081927 | POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE - The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound. | 03-26-2009 |
| 20090081871 | POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE - The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound. | 03-26-2009 |
| 20090075566 | LOW PH BARRIER SLURRY BASED ON TITANIUM DIOXIDE - The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 Å, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 Å, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. | 03-19-2009 |
| 20090029633 | METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC - A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pK | 01-29-2009 |
| 20080274674 | STACKED POLISHING PAD FOR HIGH TEMPERATURE APPLICATIONS - The invention provides a polishing pad for chemical-mechanical polishing comprising a polishing layer, a bottom layer, and a hot-melt adhesive, the hot-melt adhesive joining together the polishing layer and the bottom layer. The hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C. The invention also provides a method of polishing a substrate with the aforementioned polishing pad, as well as a method of preparing such a polishing pad. | 11-06-2008 |
| 20080220610 | Silicon oxide polishing method utilizing colloidal silica - The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles. | 09-11-2008 |
| 20080203059 | DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT - The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition. | 08-28-2008 |
