BREWER SCIENCE INC. Patent applications |
Patent application number | Title | Published |
20150122426 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 05-07-2015 |
20150064385 | DUAL-LAYER BONDING MATERIAL PROCESS FOR TEMPORARY BONDING OF MICROELECTRONIC SUBSTRATES TO CARRIER SUBSTRATES - A process is disclosed for using two polymeric bonding material layers to bond a device wafer and carrier wafer in a way that allows debonding to occur between the two layers under low-force conditions at room temperature. Optionally, a third layer is included at the interface between the two layers of polymeric bonding material to facilitate the debonding at this interface. This process can potentially improve bond line stability during backside processing of temporarily bonded wafers, simplify the preparation of bonded wafers by eliminating the need for specialized release layers, and reduce wafer cleaning time and chemical consumption after debonding. | 03-05-2015 |
20140362493 | HIGHLY CROSSLINKED POLYMER DIELECTRIC FILMS FOR IMPROVED CAPACITOR PERFORMANCE - New polymeric dielectric materials are provided for high power capacitors, especially for mobile and weapons applications. These materials utilize aminoplast crosslinking in their polymeric structure. The aminoplast crosslinking ability of these materials allows them to be customized for a number of applications, but also allows the materials to have a higher crosslinking density, leading to higher dielectric constants, higher breakdown voltage, and higher thermal stability. These materials can be incorporated into current capacitor manufacturing schemes with little to no processing changes. | 12-11-2014 |
20140299969 | HIGHLY ETCH-RESISTANT POLYMER BLOCK FOR USE IN BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY - Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers. | 10-09-2014 |
20140295656 | APPARATUS AND METHOD FOR THIN WAFER TRANSFER - A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer. | 10-02-2014 |
20140239453 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 08-28-2014 |
20140174627 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 06-26-2014 |
20140162034 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 06-12-2014 |
20140138588 | HIGHLY SOLUBLE CARBON NANOTUBES WITH ENHANCED CONDUCTIVITY - New methods for preparing carbon nanotube films having enhanced properties are provided. The method broadly provides reacting carbon nanotubes (CNTs) and compounds comprising a polyaromatic moieties in the presence a strong acid. During the reaction process, the polyaromatic moieties noncovalently bond with the carbon nanotubes. Additionally, the functionalizing moieties are further functionalized by the strong acid. This dual functionalization allows the CNTs to be dispersed at concentrations greater than 0.5 g/L in solution without damaging their desirable electronic and physical properties. The resulting solutions are stable on the shelf for months without observable bundling, and can be incorporated into solutions for printing conductive traces by a variety of means, including inkjet, screen, flexographic, gravure printing, or spin and spray coating. | 05-22-2014 |
20140130969 | METHODS OF TRANSFERRING DEVICE WAFERS OR LAYERS BETWEEN CARRIER SUBSTRATES AND OTHER SURFACES - New temporary bonding methods and articles formed from those methods are provided. In one embodiment, the methods comprise coating a device or other ultrathin layer on a growth substrate with a rigid support layer and then bonding that stack to a carrier substrate. The growth substrate can then be removed and the ultrathin layer mounted on a final support. In another embodiment, the invention provides methods of handling device layers during processing that must occur on both sides of the fragile layer without damaging it. This is accomplished via the sequential use of two carriers, one on each side of the device layer, bonded with different bonding compositions for selective debonding. | 05-15-2014 |
20140124898 | CVD-FREE, SCALABLE PROCESSES FOR THE PRODUCTION OF SILICON MICRO- AND NANOSTRUCTURES - Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios. | 05-08-2014 |
20140103546 | SILICONE POLYMERS WITH HIGH REFRACTIVE INDICES AND EXTENDED POT LIFE - Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions. | 04-17-2014 |
20130288064 | MULTIFUNCTIONAL ALCOHOL DISPERSIONS OF CARBON NANOTUBES - New carbon nanotube (CNT) compositions and methods of using those compositions are provided. Raw carbon nanotubes are mechanically dispersed via milling into multifunctional alcohols and mixtures of multifunctional alcohols and solvents to form pastes or dispersions that are viscous enough to be printed using standard means such as screen printing. These pastes or dispersions are stable in both dilute and concentrated solution. The invention allows films to be formed on substrates (e.g., plastics, glass, metals, ceramics). | 10-31-2013 |
20130288058 | DEVELOPMENT OF HIGH-VISCOSITY BONDING LAYER THROUGH IN-SITU POLYMER CHAIN EXTENSION - New compositions and methods of using those compositions as bonding compositions for temporary wafer bonding are provided. The compositions are used to temporarily bond an active wafer to a carrier wafer or substrate in microelectronic fabrication using an in situ polymerization reaction of the components of the bonding composition to yield the bonding layer. The compositions form polymerized bonding layers that are mechanically strong and thermally resistant, but allow the wafers to be separated at the appropriate stage in the fabrication process. The bonding layer also retains its solubility so that residue can be cleaned from the debonded wafers using simple wet methods rather than etching or other harsh treatments. | 10-31-2013 |
20130280656 | PHOTOSENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATING MATERIAL - Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication. | 10-24-2013 |
20130273330 | SILICON HARDMASK LAYER FOR DIRECTED SELF-ASSEMBLY - Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein. | 10-17-2013 |
20130201635 | FLUORINATED SILANE COATING COMPOSITIONS FOR THIN WAFER BONDING AND HANDLING - This invention is related to compositions that prepare substrate surfaces to enable temporary wafer bonding during microelectronics manufacturing, especially using a zonal bonding process. This invention, which comprises compositions made from fluorinated silanes blended in a polar solvent, can be used to form surface coatings or treatments having a high contact angle with water (>85°). The resulting silane solutions are stable at room temperature for longer than one month. | 08-08-2013 |
20130189524 | VISCOUS FUGITIVE POLYMER-BASED CARBON NANOTUBE COATINGS - Novel compositions comprising polymer solutions at various viscosities are provided. The polymer solutions are preferably fugitive, so as to avoid interfering with the properties of the nanomaterials after post-processing of the CNT-containing formulations. Additives, including acid generators, are added to the polymer solutions in order to allow the polymer carrier solutions to be degraded or decomposed at temperatures low enough to allow processing of commonly-used polymer film substrates. The invention further allows the carbon nanotube solutions to be screen printed or printed via inkjet. | 07-25-2013 |
20130186851 | NONPOLYMERIC ANTIREFLECTION COMPOSITIONS CONTAINING ADAMANTYL GROUPS - Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures. | 07-25-2013 |
20130129995 | ASSIST LAYERS FOR EUV LITHOGRAPHY - The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues. | 05-23-2013 |
20130113086 | SELF-LEVELING PLANARIZATION MATERIALS FOR MICROELECTRONIC TOPOGRAPHY - Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques. | 05-09-2013 |
20130089716 | SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING - The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch. | 04-11-2013 |
20130061869 | USE OF MEGASONIC ENERGY TO ASSIST EDGE BOND REMOVAL IN A ZONAL TEMPORARY BONDING PROCESS - New methods of weakening the bonds between a bonded pair of wafers or substrates are provided. The substrates are preferably bonded at their outer peripheries. When it is desired to separate the substrates, they are contacted with a solvent system suitable for weakening, softening, and/or dissolving the bonding composition at their outer peripheries. Megasonic energy is simultaneously directed at the substrates (and preferably the bonding composition itself), so as to increase solvent penetration into the composition, thus decreasing the time needed for substrate separation and increasing throughput. | 03-14-2013 |
20130032296 | CLEANING COMPOSITION FOR TEMPORARY WAFER BONDING MATERIALS - A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates. | 02-07-2013 |
20130011630 | METAL-OXIDE FILMS FROM SMALL MOLECULES FOR LITHOGRAPHIC APPLICATIONS - Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters. | 01-10-2013 |
20120326093 | HIGHLY SOLUBLE CARBON NANOTUBES WITH ENHANCED CONDUCTIVITY - New methods for preparing carbon nanotube films having enhanced properties are provided. The method broadly provides reacting carbon nanotubes (CNTs) and compounds comprising a polyaromatic moieties in the presence a strong acid. During the reaction process, the polyaromatic moieties noncovalently bond with the carbon nanotubes. Additionally, the functionalizing moieties are further functionalized by the strong acid. This dual functionalization allows the CNTs to be dispersed at concentrations greater than 0.5 g/L in solution without damaging their desirable electronic and physical properties. The resulting solutions are stable on the shelf for months without observable bundling, and can be incorporated into solutions for printing conductive traces by a variety of means, including inkjet, screen, flexographic, gravure printing, or spin and spray coating. | 12-27-2012 |
20120308835 | FLUORINATED POLYIMIDES WITH FLUORENE CARDO STRUCTURE AS OPTICAL MATERIALS THAT HAVE LOW ABSOLUTE THERMO-OPTIC COEFFICIENTS - The present invention provides new polyimide materials suitable for use in optically transparent fiber composites, ribbon composites, and optical communications applications. The polyimide compounds include monomeric repeat units comprising a fluorinated moiety and a fluorene cardo structure. The polyimides exhibit good optical transparency and have a low absolute thermo-optic coefficient (|dn/dT|). | 12-06-2012 |
20120264056 | METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS - Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 μm. | 10-18-2012 |
20120213983 | MATERIALS AND METHOD UTILIZING SHORT CARBON NANOTUBES IN TRANSPARENT PRINTED ELECTRONICS - A method of increasing the conductivity and/or transparency of a transparent, conductive film using short carbon nanotubes (≦600 nm) is provided. Methods of forming flexible, transparent, conductive films and the resulting structures thereby formed are also provided. | 08-23-2012 |
20120193762 | REVERSAL LITHOGRAPHY APPROACH BY SELECTIVE DEPOSITION OF NANOPARTICLES - A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask. | 08-02-2012 |
20120164390 | PROCESSES TO PATTERN SMALL FEATURES FOR ADVANCED PATTERNING NEEDS - Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning. | 06-28-2012 |
20120156613 | ANTI-REFLECTIVE COATINGS USING VINYL ETHER CROSSLINKERS - Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photoacid generator. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light, the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers). | 06-21-2012 |
20120130004 | SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES - New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating. | 05-24-2012 |
20120043280 | IONIC REMOVAL PROCESS USING FILTER MODIFICATION BY SELECTIVE INORGANIC ION EXCHANGER EMBEDMENT - New methods of removing impurities from solvent-based compositions using inorganic particle-embedded filters and an ion exchange process are provided. The methods comprise passing a composition through a filter embedded with inorganic particles to yield a filtered composition. Filters comprising filtration media embedded with inorganic particles and methods of producing the same are also provided. | 02-23-2012 |
20120034437 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 02-09-2012 |
20120034419 | METHODS OF PRODUCING STRUCTURES USING A DEVELOPER-SOLUBLE LAYER WITH MULTILAYER TECHNOLOGY - Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed. | 02-09-2012 |
20110308739 | METHOD AND APPARATUS FOR REMOVING A REVERSIBLY MOUNTED DEVICE WAFER FROM A CARRIER SUBSTRATE - New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided. | 12-22-2011 |
20110223524 | ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES - This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process. | 09-15-2011 |
20110171478 | ACID-ETCH RESISTANT, PROTECTIVE COATINGS - New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system. | 07-14-2011 |
20110086955 | CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING - New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process. | 04-14-2011 |
20110069467 | METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE - New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. | 03-24-2011 |
20110065257 | HIGH-TEMPERATURE SPIN-ON TEMPORARY BONDING COMPOSITIONS - New compositions and methods of using those compositions as bonding compositions are provided. The compositions are preferably thermoplastic and comprise imides, amideimides, and/or amideimide-siloxanes (either in polymeric or oligomeric form) dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process. | 03-17-2011 |
20110062604 | SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING - Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers. | 03-17-2011 |
20100213580 | ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS - Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble. | 08-26-2010 |
20100206479 | HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH - New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process. | 08-19-2010 |
20100170868 | SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY - Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled. | 07-08-2010 |
20090270300 | Composition for removing protective layer in fabrication of mems and method for removing same - There is provided a composition that can effectively remove a protective coating and a primer coating that have a resistance to etching solutions and are rendered unnecessary after wet-etching treatment in MEMS fabrication processes, and a method for removing the protective layer. The composition contains (A) at least one organic solvent selected from the group consisting of amides, lactones, pyrrolidones and ketones, (B) water, and (C) a fluoride, in an amount of 80.00 to 99.90 mass %, 0.05 to 12.00 mass %, and 0.05 to 8.00 mass %, respectively. The composition may further contain (D) phosphoric acid, phosphonic acid or phosphinic acid in an amount over 0 mass part to 5.5 mass parts, or (E) an organic amine in an amount over 0 mass part to 45 mass parts, based on 100 mass parts of the composition. | 10-29-2009 |
20090270299 | Composition for removing protective layer in fabrication of MEMS and method for removing same - There is provided a composition that can effectively remove a protective coating and a primer coating that have a resistance to etching solutions and are rendered unnecessary after wet-etching treatment in MEMS fabrication processes, and a method for removing the protective layer. The composition contains (A) at least one organic solvent selected from the group consisting of amides, lactones, pyrrolidones and ketones, (B) water, and (C) a fluoride, in an amount of 80.00 to 99.90 mass %, 0.05 to 12.00 mass %, and 0.05 to 8.00 mass %, respectively. The composition may further contain (D) phosphoric acid, phosphonic acid or phosphinic acid in an amount over 0 mass part to 5.5 mass parts, or (E) an organic amine in an amount over 0 mass part to 45 mass parts, based on 100 mass parts of the composition. | 10-29-2009 |
20090218560 | METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE - New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. | 09-03-2009 |
20090191474 | ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES - This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process. | 07-30-2009 |