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Bondtech, Inc.

Kyoto, JP

Bondtech, Inc. Patent applications
Patent application numberTitlePublished
20120104076JOINING METHOD AND DEVICE PRODUCED BY THIS METHOD AND JOINING UNIT - A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.05-03-2012
20100252615JOINING METHOD AND DEVICE PRODUCED BY THIS METHOD AND JOINING UNIT - A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required.10-07-2010
20080245843Joining Method and Device Produced by this Method and Joining Unit - A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required.10-09-2008

Patent applications by Bondtech, Inc.