BAY ZU PRECISION CO., LTD. Patent applications |
Patent application number | Title | Published |
20140127853 | DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES - A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. | 05-08-2014 |
20140124795 | DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES - A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. | 05-08-2014 |
20130221373 | SOLAR CELL MADE USING A BARRIER LAYER BETWEEN P-TYPE AND INTRINSIC LAYERS - A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer. | 08-29-2013 |
20130167920 | CONDUCTIVE SUBSTRATE AND FABRICATING METHOD THEREOF, AND SOLAR CELL - A fabricating method of a conductive substrate including the following steps is provided. A substrate is provided. A barrier layer having a first roughened surface is formed on the substrate by an atmospheric pressure plasma process, wherein the surface roughness (Ra) of the first roughened surface formed by the atmospheric pressure plasma process is between 10 nanometers (nm) and 100 nm. A first electrode layer is formed on the first roughened surface of the barrier layer by a vacuum sputter process, wherein a second roughened surface with the surface roughness (Ra) between 10 nm and 100 nm is formed on a surface of the first electrode layer. Furthermore, a photoelectric conversion layer is formed on the second roughened surface of the first electrode layer. A second electrode layer is formed on the photoelectric conversion layer. A solar cell and a conductive substrate are also provided. | 07-04-2013 |