Azzurro Semiconductors AG Patent applications |
Patent application number | Title | Published |
20140034984 | SEMICONDUCTOR LIGHT EMITTER DEVICE - A semiconductor light emitter device for emitting light having a photon energy, comprises a mechanical carrier made substantially of a material that is an absorbant of the light with the photon energy, and having a carrier bottom side and a carrier top side opposite to the carrier bottom side, a layer structure epitaxially deposited on the carrier bottom side of the mechanical carrier and comprising an active-layer stack with at least two semiconductor layers of opposite conductivity types, which is configured to emit light upon application of a voltage to the active-layer stack, and at least one opening in the mechanical carrier, the opening reaching from the carrier bottom side to the carrier top side and being arranged and shaped to allow a passage of light, which is emitted from the active-layer stack, through the opening in the mechanical carrier. | 02-06-2014 |
20130256697 | GROUP-III-NITRIDE BASED LAYER STRUCTURE AND SEMICONDUCTOR DEVICE - A group-III-nitride based layer sequence fabricated by means of an epitaxial process on a silicon substrate, the layer sequence comprising at least one doped first group-III-nitride layer ( | 10-03-2013 |
20120217617 | Semi-Polar Wurtzite Group III Nitride Based Semiconductor Layers and Semiconductor Components Based Thereon - Semipolar wurtzite Group III nitride-based semiconductor layers and semiconductor components based thereon are described. Group III nitride layers have a broad range of applications in electronics and optoelectronics. Such layers are generally grown on substrates such as sapphire, SiC and, more recently, Si(111). The layers obtained are generally polar or have c-axis orientation in the direction of growth. For many applications in the field of optoelectronics, as well as acoustic applications in SAWs, the growth of non-polar or semipolar Group III nitride layers is interesting or necessary. The process according to the invention permits simple and inexpensive growth of polarisation-reduced Group III nitride layers without prior structuring of the substrate. | 08-30-2012 |