| AZ ELECTRONIC MATERIALS USA CORP. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120064722 | ETCHING SOLUTION AND TRENCH ISOLATION STRUCTURE-FORMATION PROCESS EMPOLYING THE SAME - The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a δH value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20° C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements. | 03-15-2012 |
| 20110250544 | BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS - Antireflective coating compositions are discussed. | 10-13-2011 |
