| Avago Technologies Wireless IP (Singapore) Pte. Ltd. Patent applications |
| Patent application number | Title | Published |
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| 20120126887 | HIGH-EFFICIENCY POWER AMPLIFIER WITH MULTIPLE POWER MODES - In a representative embodiment, a multiple mode power amplifier that is operable in a first power mode and a second power mode. The multiple mode power amplifier comprises a first amplifying unit; a second amplifying unit; a first impedance matching network connected to an output port of the first amplifying unit; a second impedance matching network connected to an output port of the second amplifying unit and to the first impedance matching network; and a third impedance matching network connected to the output ports of the first and the second amplifying units. The third impedance matching network reduces a phase difference between signals amplified by the first and the second amplifying units in the first mode. | 05-24-2012 |
| 20120098625 | ELECTROSTATIC BONDING OF A DIE SUBSTRATE TO A PACKAGE SUBSTRATE - A transducer apparatus comprises a package substrate and a transducer disposed over a die substrate. The die substrate is disposed over the package substrate. The transducer apparatus also comprises a voltage source connected between the die substrate and the package substrate, and configured to selectively apply an electrostatic attractive force between the die substrate and the package substrate. | 04-26-2012 |
| 20120096697 | METHOD OF FORMING ACOUSTIC RESONATOR USING INTERVENING SEED LAYER - A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer. | 04-26-2012 |
| 20120075026 | PACKAGED DEVICE WITH ACOUSTIC RESONATOR AND ELECTRONIC CIRCUITRY AND METHOD OF MAKING THE SAME - A device includes: a base substrate having a bonding pad and a peripheral pad, the peripheral pad encompassing the bonding pad; an acoustic resonator on the base substrate; a cap substrate having a bonding pad seal and a peripheral pad seal, the bonding pad seal bonding around the perimeter of the bonding pad and the peripheral pad seal bonding with the peripheral pad to define a hermetically sealed volume between the cap substrate and the base substrate, the cap substrate having a through hole therein over the bonding pad providing access for a connection to the bonding pad; a low-resistivity material layer region disposed on a portion of a surface of the cap substrate disposed inside the hermetically sealed volume, the material layer region being isolated from the bonding pad seal; and electronic circuitry disposed in the material layer region and electrical connected with the acoustic resonator. | 03-29-2012 |
| 20120074555 | SEMICONDUCTOR PACKAGE INCLUDING CAP - A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns. | 03-29-2012 |
| 20120043628 | PACKAGED DEVICE INCLUDING A WELL FOR CONTAINING A DIE - A packaged device includes a package defining a well having a well top, a die positioned in the well of the package, and a retaining substrate attached to the package over the well top. The retaining substrate holds the die in direct contact with a portion of the package exposed at a well bottom opposite the well top. | 02-23-2012 |
| 20120025370 | SEMICONDUCTOR STRUCTURE COMPRISING PILLAR AND MOISTURE BARRIER - A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar. | 02-02-2012 |
| 20120025335 | MICROELECTROMECHANICAL SYSTEMS (MEMS) PACKAGE - A micro-electromechanical systems (MEMS) transducer device comprises: a package substrate having a first coefficient of thermal expansion (CTE); and a transducer substrate comprising a transducer. The transducer substrate is disposed over the package substrate. The transducer substrate has a second CTE that substantially matches the first CTE. | 02-02-2012 |
| 20120025269 | SEMICONDUCTOR STRUCTURE COMPRISING PILLAR - A semiconductor structure comprises a substrate and a metal layer disposed over the substrate. The metal layer comprises a first electrical trace and a second electrical trace. The semiconductor structure comprises a conductive pillar disposed directly on and in electrical contact with the first electrical trace; and a dielectric layer selectively disposed between the metal layer and the conductive pillar. The dielectric layer electrically isolates the second electrical trace from the pillar. | 02-02-2012 |
| 20120013401 | POWER AMPLIFIER WITH SELECTABLE LOAD IMPEDANCE AND METHOD OF AMPLIFYING A SIGNAL WITH SELECTABLE LOAD IMPEDANCE - A device includes: a power amplifier, including a supply voltage terminal, an input port and an output port, and the power amplifier being configured to receive a supply voltage at the supply voltage terminal, an input signal through the input port, to amplify the received input signal, and to output an amplified output signal through the output port; a variable impedance matching circuit having an input terminal connected to the output port of the power amplifier, and having an output terminal for being connected to a load; and a controller including a voltage measuring unit configured to measure the supply voltage, to compare the measured supply voltage with a threshold voltage, and to control the variable impedance matching circuit based on a result of the comparison so as to adjust a load impedance seen by the power amplifier at its output port. | 01-19-2012 |
| 20110291207 | TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME - A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device. | 12-01-2011 |
| 20110288801 | METHOD AND SYSTEM FOR DETERMINING THE TIME-OF-FLIGHT OF A SIGNAL - A method of estimating the time of flight of a burst signal includes: receiving the burst signal; determining the slope of the phase characteristic of the Fourier transform of the received burst signal; and estimating the time-of-flight of the burst signal from the slope of the phase characteristic of the Fourier transform of the received burst signal. | 11-24-2011 |
| 20110288795 | METHOD AND SYSTEM FOR DETERMINING THE TIME-OF-FLIGHT OF AN ACOUSTIC SIGNAL - A method of estimating the time and flight of an acoustic signal transmitted by a transmit acoustic transducer determines a difference in time between receiving the transmitted acoustic signal and receiving an electromagnetic wave transmitted by the transmit acoustic transducer coincident with transmitting the acoustic signal. | 11-24-2011 |
| 20110268305 | MULTI-THROAT ACOUSTIC HORN FOR ACOUSTIC FILTERING - A horn coupled to multiple acoustic transducers includes first and second throat portions and a mixing area integrally formed with the first and second throat portions. The first throat portion has a first throat opening adjacent to a first transducer, and the second throat portion has a second throat opening adjacent to a second transducer. The mixing area includes a common mouth opening shared by the first and second throat portions for at least one of transmitting or receiving acoustic signals. At least one dimension of the first throat portion is different from a corresponding dimension of the second throat portion, so that a first cutoff frequency corresponding to the first throat portion is different from a second cutoff frequency corresponding to the second throat portion. | 11-03-2011 |
| 20110266925 | RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER - An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer. | 11-03-2011 |
| 20110254111 | PACKAGED ACOUSTIC TRANSDUCER DEVICE WITH SHIELDING FROM ELECTROMAGNETIC INTERFERENCE - A device includes: a housing structure; lid configured together with the housing structure to define a cavity therein; and at least one acoustic transducer disposed within the cavity, wherein the lid shields the at least one acoustic transducer from exposure to electromagnetic interference from electromagnetic radiation originating outside the device. In some embodiments, the housing structure includes some electrically conductive leads, including a ground lead, and the lid is directly connected to the ground lead. | 10-20-2011 |
| 20110250743 | METHOD FOR PRODUCING A TRANSISTOR GATE WITH SUB-PHOTOLITHOGRAPHIC DIMENSIONS - Methods of fabricating compound semiconductor devices are described. | 10-13-2011 |
| 20110237204 | BULK ACOUSTIC RESONATOR STRUCTURE COMPRISING HYBRID ELECTRODES - In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed. | 09-29-2011 |
| 20110234316 | IMPEDANCE MATCHING CIRCUIT CAPABLE OF EFFICIENTLY ISOLATING PATHS FOR MULTI-BAND POWER AMPLIFIER - In accordance with a representative embodiment, an impedance matching circuit for use at an output stage of a power amplifier is disclosed. The impedance matching circuit comprises: an input port for receiving a frequency band signal; and a plurality of paths, each path being allocated with a principal band signal to be transmitted therethrough and including a path on-off network and a fixed-value impedance matching network. Depending on a type of the received frequency band signal, the path on-off network is configured to activate a selected one of the plurality of paths by rendering an input impedance of the selected path to have a lower absolute magnitude so that the signal is transmitted therethrough, and to deactivate the remaining paths of the plurality of paths by rendering the input impedance thereof to have a higher absolute magnitude so that the signal is not transmitted therethrough. The fixed-value impedance matching network matches a load impedance of the output port of each path to the input impedance thereof, thereby rendering the input impedance thereof to have a prescribed reference value with respect to the principal band signal when said path is activated by the path on-off network. | 09-29-2011 |
| 20110233628 | FIELD EFFECT TRANSISTOR SWITCH FOR RF SIGNALS AND METHOD OF MAKING THE SAME - A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa. | 09-29-2011 |
| 20110204997 | BULK ACOUSTIC RESONATOR STRUCTURES COMPRISING A SINGLE MATERIAL ACOUSTIC COUPLING LAYER COMPRISING INHOMOGENEOUS ACOUSTIC PROPERTY - In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer. | 08-25-2011 |
| 20110204996 | ACOUSTIC COUPLING LAYER FOR COUPLED RESONATOR FILTERS AND METHOD OF FABRICATING ACOUSTIC COUPLING LAYER - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm. | 08-25-2011 |
| 20110204995 | ACOUSTICALLY COUPLED RESONATOR FILTER WITH IMPEDANCE TRANSFORMATION RATIO CONTROLLED BY RESONANT FREQUENCY DIFFERENCE BETWEEN TWO COUPLED RESONATORS - A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other. | 08-25-2011 |
| 20110204749 | SHORT RANGE ULTRASONIC DEVICE WITH BROADBEAM ULTRASONIC TRANSDUCERS - An apparatus comprises a first transducer support configured to receive a first transducer in a first opening. A face of the first face of the transducer is located in a first plane. The apparatus also comprises a second transducer support configured to receive a second transducer in a second opening. A face of the second transducer is located in a second plane substantially parallel to the first plane. | 08-25-2011 |
| 20110204456 | PACKAGED DEVICE WITH ACOUSTIC TRANSDUCER AND AMPLIFIER - A device includes: a lead frame having an aperture in a central portion thereof; at least one acoustic transducer mounted on the lead frame above the aperture and configured to convert between acoustic energy and an electrical signal with low signal losses; a housing connected to the lead frame and including a base portion on a same side of the lead frame as the acoustic transducer; an amplifier is provided on a base portion of the housing in close proximity to the acoustic transducer; and a lid configured together with the base portion of the housing to define a cavity, wherein the acoustic transducer and the amplifier are closely positioned within the MEMS device cavity. | 08-25-2011 |
| 20110203378 | INTEGRATED OPTICAL AND ACOUSTIC TRANSDUCER DEVICE - An integrated transducer device includes an optical transducer and an acoustic transducer integrally joined with the optical transducer. The acoustic transducer includes a membrane responsive to acoustic signals, the membrane being aligned with the optical transducer such that optical signals emitted or received by the optical transducer pass through the membrane. A propagation direction of the acoustic signals emitted or received by the acoustic transducer is collinear with a propagation direction of the optical signals emitted or received by the optical transducer. | 08-25-2011 |
| 20110189964 | METHOD AND APPARATUS FOR PROVIDING IMPEDANCE MATCHING FOR HIGH-FREQUENCY SIGNAL TRANSMITTER - In accordance with another representative embodiment, a high-frequency signal transmitter a power amplifier configured to supply a high-frequency signal; an antenna configured to transmit the high-frequency signal; a transmission line configured to transfer the high-frequency signal from the power amplifier to the antenna; and an impedance matching circuit connected to the transmission line. The high-frequency signal transmitter also comprises a mismatch detector. The mismatch detector is configured to designate a comparatively poor linearity region and a comparatively good linearity region by dividing a Smith chart into the two regions based on Adjacent Channel Power Ratio (ACPR) contours drawn on the Smith chart at a point on the transmission line where the impedance matching circuit is connected, to measure a time-dependent reflection coefficient of the high-frequency signal transmitter in terms of a phase and a magnitude, to determine whether the reflection coefficient is located in the comparatively poor linearity region or the comparatively good linearity region, and based on a result of the determination, to improve the linearity of the high-frequency signal transmitter. | 08-04-2011 |
| 20110180391 | METHOD OF FABRICATING PIEZOELECTRIC MATERIAL WITH SELECTED C-AXIS ORIENTATION - In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (C | 07-28-2011 |
| 20110156812 | MULTI-BAND, MULTI-MODE RF TRANSMIT AMPLIFIER SYSTEM WITH SEPARATE SIGNAL PATHS FOR LINEAR AND SATURATED OPERATION - A device includes: an input for receiving an RF input signal having a signal format selected among a plurality of signal formats, including at least one signal format to be linearly amplified, and at least another signal format be amplified in saturation; at least a first and a second output; a first amplification path from the input to the first output that includes a first amplifier that operates in a linear amplification mode with respect to the RF input signal; a second amplification path from the input port to the second output that includes the first amplifier, and a second amplifier that operates in saturated amplification with respect to the RF input signal; and a path selection device that selectively passes the RF input signal through the first amplification path or the second amplification path in response to the selected signal format of the RF input signal. | 06-30-2011 |
| 20110147894 | LOW CAPACITANCE SEMICONDUCTOR DEVICE - A semiconductor device includes a diode, a passivation layer and a conductive layer. The diode includes an epitaxial layer on a semiconductor substrate, and first and second diode contacts on different planes. The passivation layer has a planar top surface, and includes multiple consecutive layers of a benzocyclobutene (BCB) material formed on the diode, an aggregate thickness of the passivation layer exceeding a thickness of the epitaxial layer. The conductive layer is formed on the top surface of passivation layer, the conductive layer connecting with the first and the second diodes contact through first and second openings in the passivation layer, respectively. The passivation layer enhances a capacitive isolation between the conductive layer and the diode. | 06-23-2011 |
| 20110133297 | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS - A semiconductor is disclosed. In one embodiment, the semiconductor includes a semiconductor substrate having an active area region, a covering configured to protect the active area region, and a carrier. An interspace is located between the carrier and the covering. The interspace is filled with an underfiller material is disclosed. | 06-09-2011 |
| 20110128092 | DUPLEXER WITH NEGATIVE PHASE SHIFTING CIRCUIT - A duplexer includes first and second acoustic filters and a phase shifter. The first acoustic filter is connected between an antenna and the transmitter, and has a first passband. The second acoustic filter is connected between the antenna and the receiver, and has a second passband. The phase shifter includes at least one series capacitor connected in series with the antenna and at least one shunt inductor connected between the at least one capacitor and ground. The phase shifter is connected between the antenna and the first filter when the first passband is higher than the second passband, and provides a negative phase shift of an output impedance of the first filter. The phase shifter is connected between the antenna and the second filter when the second passband is higher than the first passband, and provides a negative phase shift of an input impedance of the second filter. | 06-02-2011 |
| 20110122731 | TRANSDUCER DEVICE HAVING COUPLED RESONANT ELEMENTS - A transducer device includes a coupling cavity, a first resonant element and a second resonant element. The first resonant element is coupled to the coupling cavity and configured to send or receive acoustic signals. The second resonant element is coupled to the coupling cavity and configured to modify a frequency response of the first resonant element via the coupling cavity. | 05-26-2011 |
| 20110121916 | HYBRID BULK ACOUSTIC WAVE RESONATOR - A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed. | 05-26-2011 |
| 20110121915 | PASSIVATION LAYERS IN ACOUSTIC RESONATORS - An acoustic resonator, comprises a substrate and a first passivation layer disposed over the substrate. The first passivation layer comprises a first layer of silicon carbide (SiC). The acoustic resonator further comprises a first electrode disposed over the passivation layer, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator comprises a second passivation layer disposed over the second electrode. The second passivation layer comprises a second layer of silicon carbide (SiC). | 05-26-2011 |
| 20110121689 | POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS - An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction. | 05-26-2011 |
| 20110120971 | MICROMACHINED TRANSDUCERS AND METHOD OF FABRICATION - In accordance with an illustrative embodiment, a method of fabricating a transducer is described. The method comprises providing a transducer over a first surface of a substrate, wherein the substrate comprises a thickness. The method further comprises patterning a mask over a second surface. The mask comprises an opening for forming a scribe etch. The method comprises etching through the opening in the mask and into but not through the thickness of the substrate to provide the scribe etch. | 05-26-2011 |
| 20110119007 | METHOD AND SYSTEM FOR DETERMINING THE TIME-OF-FLIGHT OF A SIGNAL - A method for determining the time-of-flight of a signal includes: receiving a signal having a series of pulses of period T, the series of pulses having a phase transition provided therein windowing the received signal with a window having a width substantially the same as T to determine a magnitude and phase of the windowed signal at a frequency F=1/T; sliding the window in time, one period T at a time, with respect to the received signal to produce N sets of magnitude and phase data at the frequency F; from the N sets of magnitude and phase data, determining a time when the phase transition occurs in the received signal; and determining a time-of-flight of the signal from the time when the phase transition occurs in the received signal. | 05-19-2011 |
| 20110115037 | ACOUSTIC DEVICE WITH LOW ACOUSTIC LOSS PACKAGING - A device includes: a substrate having an aperture therethrough from a first side of the substrate to a second side of the substrate; a semiconductor die having an acoustic transducer, the semiconductor die being provided on the first side of the substrate such that the acoustic transducer is aligned with the aperture in the substrate; and a dual in-line package having a recess formed therein. The substrate is disposed such that the first side of the substrate faces the recess of the dual in-line package, and the semiconductor die is disposed between the first side of the substrate and the bottom surface of the recess in the dual in-line package. | 05-19-2011 |
| 20110103632 | INTEGRATED ACOUSTIC HORN AND LEAD FRAME - A device for manipulating acoustic signals includes a transducer die and a horn. The transducer die is attached to a lead frame and configured to convert between electrical energy and the acoustic signals, the transducer die having a transducer membrane. The horn is integrally connected with the lead frame, the horn extending from the lead frame and having a throat positioned adjacent to the transducer membrane and a mouth opening at an opposite end of the horn from the throat. | 05-05-2011 |
| 20110018654 | RESONATOR FILTER WITH MULTIPLE CROSS-COUPLINGS - A filter device is provided for filtering signals. The filter device includes multiple series resonators, multiple shunt resonators and multiple cross-coupling circuits. The series resonators are connected in series between an antenna and one of a transmitter or a receiver. The shunt resonators are respectively connected between at least one of the series resistors and a ground voltage. The cross-coupling circuits are configured to bypass at least two series resonators of the multiple series resonators and at least one shunt resonator of the multiple shunt resonators. | 01-27-2011 |
| 20110018653 | DUPLEXER HAVING RESONATOR FILTERS - A duplexer interfacing a receiver and a transmitter with an antenna includes first and second filters. The first filter includes at least four first series resonators, four first shunt resonators respectively connected between the four first series resonators and ground voltage, and a mutual inductance commonly connected between two adjacent first shunt resonators. The second filter includes at least four second series resonators, four second shunt resonators respectively connected between the four second series resistors and the ground voltage, and a cross-coupling capacitor connected between a first capacitor node connected to at least one of the second series resonators and a second capacitor node connected to one of the second shunt resonators, and an inductor connected in series between second capacitor node and ground. Three of the second series resonators and the second shunt resonator to which the cross-coupling capacitor is connected are between the first and second capacitor nodes. | 01-27-2011 |
| 20110001576 | POWER AMPLIFIER MODULE - A power amplifier module comprises a power amplifier disposed in a coreless substrate and a directional coupler disposed in a coreless substrate and connected to the power amplifier. | 01-06-2011 |
| 20110001241 | COMPOUND SEMICONDUCTOR DEVICE AND CONNECTORS - A semiconductor device includes a semiconductor substrate formed from compound semiconductor material and multiple conductive connecting pads. The connecting pads are symmetrically arranged on a first surface of the semiconductor substrate in an interweaving pattern. Each cleavage plane extending across the first surface of the semiconductor substrate intersects a portion of at least one connecting pad of the plurality of connecting pads. | 01-06-2011 |
| 20100327978 | TEMPERATURE COMPENSATED SELF-BIAS DARLINGTON PAIR AMPLIFIER - A Darlington pair amplifier includes a temperature compensation device. In one case, the device is a resistor connected in series between: (a) an intermediate node of two bias resistors for the Darlington pair, and (b) the control terminal of the Darlington pair. In another case, the device is a second, smaller, Darlington pair connected in series with the two bias resistors for the first Darlington pair. In still another case, the device is a combination of: (1) a resistor connected in series between: (a) an intermediate node of the two bias resistors for the Darlington pair, and (b) the control terminal of the Darlington pair; and (2) a second, smaller, Darlington pair connected in series with the two bias resistors for the first Darlington pair. | 12-30-2010 |
| 20100327969 | POWER AMPLIFIER HAVING PARALLEL AMPLIFICATION STAGES AND ASSOCIATED IMPEDANCE MATCHING NETWORKS - An amplification device includes a series combination of a driver stage, an output terminal matching network, and a secondary amplification stage. The driver stage includes a driver amplifier and an output matching network. The secondary amplification stage includes a parallel combination of an impedance transformation network and a main amplification stage. The main amplification stage includes a plurality of main amplification branches in parallel with each other, and an input matching network in series with the parallel combination. Each main amplification branch includes a main amplifier, and input and output impedance matching networks. A control circuit supplies activation signals to the main amplification branches to selectively turn them on and off. The device has no switches in the path of the signal that is amplified. In at least one operating mode, the control circuit turns on at least two of the main amplification branches at the same time. | 12-30-2010 |
| 20100327702 | TEMPERATURE CONTROL OF MICROMACHINED TRANSDUCERS - A micromachined structure, comprises a substrate and a cavity in the substrate. The micromachined structure comprises a membrane layer disposed over the substrate and spanning the cavity. | 12-30-2010 |
| 20100327701 | Piezoelectric resonator structures having temperature compensation - An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG). | 12-30-2010 |
| 20100327697 | Acoustic resonator structure comprising a bridge - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 12-30-2010 |
| 20100327695 | Multi-frequency acoustic array - An apparatus comprises a substrate and transducers disposed over the substrate, each of the transducers comprising a different resonance frequency. A transducer device comprises circuitry configured to transmit signals, or to receive signals, or both. The transducer device also comprises a transducer block comprising a plurality of piezoelectric ultrasonic transducers (PMUT), wherein each of the PMUTs; and an interconnect configured to provide signals from the transducer block to the circuitry and to provide signals from the circuitry to the transducer block. | 12-30-2010 |
| 20100301942 | AMPLIFIER WITH BYPASS SWITCH - An amplifying circuit of a receiver for receiving a signal in a wireless network includes an amplifier and a switch. The amplifier includes an amplifying transistor having a gate connected to an input for receiving the signal and a source/drain connected to a voltage source through an inductance. The amplifier also includes a bypass transistor having a gate connected to a control signal for activating the bypass transistor in a bypass mode and a source/drain connected in parallel with the inductance. The switch is connected in parallel with the amplifier between the input and an output, and activates in the bypass mode, enabling the received signal to bypass the amplifier. In the bypass mode, a voltage at the source/drain of the amplifying transistor is lower when the bypass transistor is activated than when not activated, the lower source/drain RF voltage reducing unwanted harmonics from the amplifier. | 12-02-2010 |
| 20100290317 | ACOUSTIC NAVIGATION DEVICE AND METHOD OF DETECTING MOVEMENT OF A NAVIGATION DEVICE - A navigation device for navigating a user interface of a processor-controlled device includes an acoustic transmitter adapted to transmit an acoustic signal, an acoustic receiver adapted to receive the acoustic signal and located at a fixed position with respect to the acoustic transmitter, and a measurement circuit coupled to an output of the acoustic receiver and adapted to determine a distance traversed by the navigation device as a function of time. | 11-18-2010 |
| 20100278368 | MICROMACHINED HORN - An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile. | 11-04-2010 |
| 20100277257 | ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING SELECTIVE METAL ETCH - An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode. | 11-04-2010 |
| 20100272310 | MICROCAP ACOUSTIC TRANSDUCER DEVICE - A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer. | 10-28-2010 |
| 20100271134 | High Gain Stacked Cascade Amplifier with Current Compensation to reduce Gain Compression - A high gain stacked cascade amplifier includes a first amplifying element, a second amplifying element, a current mirror bias element, and a dynamic bias adjustment element. The first and second amplifying elements are coupled in series to form the high gain stacked cascade amplifier configuration. The current mirror bias element provides a bias to the first and second amplifying elements. The dynamic bias adjustment element is coupled to the second amplifying element. The dynamic bias adjustment element is configured to increase a gain compression point of a composite filter, formed by the first and second amplifying elements, in response to a determination that an input signal causes gain compression in the first amplifying element. | 10-28-2010 |
| 20100254550 | RECONFIGURABLE ACOUSTIC TRANSDUCER DEVICE - A device comprises: a first acoustic transducer; a second acoustic transducer; one or more transducer drivers; one or more signal receivers; and a transducer configuration device for selectively configuring connections between: (1) at least one of the first and second acoustic transducers; and (2) the one or more transducer drivers and the one or more signal receivers, according to a selected operating mode for the device among a plurality of possible operating modes. | 10-07-2010 |
| 20100232623 | TRANSDUCER DEVICE INCLUDING FEEDBACK CIRCUIT - A transducer device includes an acoustic transducer, a parameter extractor and a feedback circuit. The parameter extractor is configured to extract an operating parameter from the acoustic transducer. The feedback circuit is configured to generate a correction signal based on a difference between the extracted operating parameter and a corresponding reference parameter. The correction signal is applied to adjust the operating parameter of the acoustic transducer. | 09-16-2010 |
| 20100202174 | AC-DC CONVERTER CIRCUIT AND POWER SUPPLY - An AC-DC converter and a power supply are described. | 08-12-2010 |
| 20100195851 | ACTIVE TEMPERATURE CONTROL OF PIEZOELECTRIC MEMBRANE-BASED MICRO-ELECTROMECHANICAL DEVICES - In a representative embodiment, an apparatus, comprises a substrate; a microelectronic ultrasonic transducer (MUT) disposed over the substrate; and a thermoelectric device disposed proximate to the MUT and configured to provide heat to or remove heat from the MUT. A microelectromechanical MEMs device is also described. | 08-05-2010 |
| 20100195547 | POWER DETECOR FOR MULTI-BAND NETWORK ACCESS - A device for interfacing with multiple different types of network access points includes multiple power amplifiers, a switch and a power detecting circuit. The power amplifiers are configured to provide corresponding signals associated with the different types of network access points, each signal having at least one parameter different than a corresponding parameter in another signal. The switch is configured to select one of the signals to provide an output signal. The power detecting circuit is configured to detect power of the output signal, and includes multiple states corresponding to the multiple different types of network access points. The power detecting circuit outputs a voltage level within the same voltage range for the signals in response to the multiple states corresponding to the different types of network access points with which the signals are associated. | 08-05-2010 |
| 20100146755 | METHOD OF MANUFACTURING AN ACOUSTIC MIRROR FOR A PIEZOELECTRIC RESONATOR AND METHOD OF MANUFACTURING A PIEZOELECTRIC RESONATOR - A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion. | 06-17-2010 |
| 20100127765 | DEVICE FOR PROVIDING SUBSTANTIALLY CONSTANT CURRENT IN RESPONSE TO VARYING VOLTAGE - A device for providing a substantially constant current includes first and second current mirrors. The first current mirror receives a first amount of a first bias current and provides an output current based on the first amount of the first bias current, the first bias current being based on a fixed voltage. The second current mirror receives a second bias current and a second amount of the first bias current, the second bias current being based on a variable voltage. The second bias current and the second amount of the first bias current vary directly with variations in the variable voltage, and the first amount of the first bias current varies inversely with variations in the variable voltage. The output current remains substantially constant based on the variations in first amount of the first bias current, which counteract effects on the output current by variations in the second voltage. | 05-27-2010 |
| 20100117485 | PIEZOELECTRIC TRANSDUCERS WITH NOISE-CANCELLING ELECTRODES - In a representative embodiment, an apparatus comprises a transducer providing a first output; a capacitor providing a second output; a first load impedance connected to the first output; a second load impedance connected to the second output; and a differential amplifier having a first input connected to the first output and a second input connected to the second output. Illustratively, the first load impedance is connected electrically in parallel with the first input and the second load impedance is connected electrically in parallel with the second input. | 05-13-2010 |
| 20100112965 | Method and Apparatus to Transmit, Receive and Process Signals with Narrow Bandwith Devices - In a representative embodiment, an electronic transmitter comprises a signal source configured to provide an input signal comprising a plurality of frequency components; and a plurality of transducers each configured to receive the input signal and each configured to resonate substantially at one frequency of a subset of the plurality of frequency components. An electronic receiver, an acoustic transmitter and an acoustic receiver are also described. | 05-06-2010 |
| 20100107389 | METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR - In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer. | 05-06-2010 |
| 20100096745 | BONDED WAFER STRUCTURE AND METHOD OF FABRICATION - A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described. | 04-22-2010 |
| 20100052815 | SINGLE CAVITY ACOUSTIC RESONATORS AND ELECTRICAL FILTERS COMPRISING SINGLE CAVITY ACOUSTIC RESONATORS - A single cavity acoustic resonator comprises: a first electrode; a second electrode; a third electrode disposed between the first electrode and the second electrode. The single cavity acoustic resonator also comprises: a first piezoelectric layer disposed between the third electrode and the first electrode, and comprising a first C-axis having an orientation; and a second piezoelectric layer disposed between the third electrode and the second electrode, and comprising a second C-axis having an orientation parallel to the first C-axis. Application of a time varying electrical signal at a drive frequency to either the third electrode or to the first and second electrodes results in a resonance of the single cavity acoustic resonator at twice a fundamental resonant frequency and a cancellation of substantially all even-order mixing products in the single cavity resonator. An electrical filter and a duplexer are also described. | 03-04-2010 |
| 20100007421 | ATTENUATOR WITH BIAS CONTROL CIRCUIT - An attenuator includes one or more series attenuation branches including one or more series field effect transistors (FETs) each having a gate; one or more shunt attenuation branches including one or more shunt FETs each having a gate; and a bias control FET. The bias control FET receives at its gate a first bias control signal and in response thereto produces at one of its drain and source terminals a second bias control signal. Either the first bias control signal is coupled to the gates of one or more series FETs, and the second bias control signal is coupled to the gates of the one or more shunt FETs; or the first bias control signal is coupled to the gates of the one or more shunt FETs, and the second bias control signal is coupled to the gates of the one or more series FETs. | 01-14-2010 |
| 20090309656 | MULTIPLE OUTPUT POWER MODE AMPLIFIER - A multi-mode power amplifier and an electronic device including the amplifier are described. | 12-17-2009 |
| 20090302479 | SEMICONDUCTOR STRUCTURES HAVING VIAS - A semiconductor structure comprises a substrate having a front surface and a back surface and a via extending from the first surface, the via comprising. The via comprises: a first side; a second side parallel to the first side; a first end extending between the first side and the second side; a second end opposite to the first end and extending between the first side and the second side. The first and second ends form oblique angles with the first and second sides. A method of fabricating the vias is also described. | 12-10-2009 |
| 20090295515 | FOUR-STATE DIGITAL ATTENUATOR HAVING TWO-BIT CONTROL INTERFACE - A four-state digital attenuator for an RF signal includes a first external terminal adapted to receive a first control voltage; a second external terminal adapted to receive a second control voltage, and a third external terminal connected to a fixed supply voltage. The four-state digital attenuator receives no supply voltages other than the control voltages and the fixed supply voltage connected to the third external terminal. A plurality of series paths are provided from an RF input to an RF output, each of the series paths passing through a node. A plurality of shunt paths are provided from the node to the third external terminal. A driver selectively enables the series paths and shunt paths in response to the first and second control voltages to provide four attenuation levels for an RF signal from the RF input to the RF output. | 12-03-2009 |
| 20090295472 | SWITCH-AROUND LOW NOISE AMPLIFIER - A switch-around low noise amplifier (LNA) device includes an input for receiving an input signal; an output for outputting an output signal; an LNA transistor coupled between the input and the output; a bypass switch circuit coupled between the input and the output; a current mirror circuit operatively connected to the LNA transistor to control a current flowing through the LNA transistor; a source follower switch operatively connected to the current mirror circuit to selectively turn on and off the current through the current mirror circuit in response to a mode select signal; and a driver adapted to selectively turn on and off the bypass switch circuit in response to the mode select signal. The LNA transistor receives the input signal at its control terminal, and one of the first and second terminals is directly connected to a supply voltage (e.g., ground). | 12-03-2009 |
| 20090273415 | BULK ACOUSTIC RESONATOR ELECTRICAL IMPEDANCE TRANSFORMERS - An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same. | 11-05-2009 |
| 20090273256 | TRANSCEIVER CIRCUIT FOR FILM BULK ACOUSTIC RESONATOR (FBAR) TRANSDUCERS - A piezoelectric transducer device includes a receive signal path, a transistor and a piezoelectric transducer connected to a first terminal of the transistor. The device also includes a switch connected to a second terminal of the transistor, wherein the switch is adapted to selectively connect the second terminal of the transistor to a transmit signal or to a bias voltage; an output connected to a third terminal of the transistor, and adapted to receive a signal from the transducer when the switch is connected to the bias voltage, wherein the switch is not in the receive signal. | 11-05-2009 |
| 20090273093 | PLANAR PACKAGELESS SEMICONDUCTOR STRUCTURE WITH VIA AND COPLANAR CONTACTS - A semiconductor device includes a substrate having a first side and a second side and an epitaxial layer disposed over the second side. The device also includes a conductive via extending through the epitaxial layer to the second side and comprising a conductive contact; and a bond pad disposed over the epitaxial layer and comprising a conductive material, wherein the semiconductor is not provided in a package. | 11-05-2009 |
| 20090189673 | MIXER WITH BALANCED LOCAL OSCILLATOR SIGNAL - A mixer includes a first field effect transistor (FET) having a gate that receives a first signal of a balanced local oscillator (LO) signal, a first source/drain coupled to a ground voltage, and a second source/drain; and a second FET having a gate that receives a second signal of the balanced LO signal, a first source/drain that floats, and a second source/drain connected to the second source/drain of the first FET to form a mixing node, the second signal being out of phase with the first signal. A diplexer is connected between the mixing node and each of a radio frequency (RF) port and an intermediate frequency (IF) port. A first LO leakage caused by the first FET is substantially canceled by a second LO leakage caused by the second FET at the mixing node. | 07-30-2009 |
| 20090100657 | PIEZOELECTRIC RESONATOR HAVING IMPROVED TEMPERATURE COMPENSATION AND METHOD FOR MANUFACTURING SAME - A piezoelectric resonator includes a piezoelectric layer having a first resonance frequency temperature coefficient of a first sign, a first and a second electrode, the piezoelectric layer being arranged between the first and second electrodes, and a compensation layer arranged between the first electrode and the piezoelectric layer, of a compensation material having a second resonance frequency temperature coefficient of a second sign opposite to the first one, wherein the compensation material is provided with a modification material to increase a conductivity of the compensation layer in a direction of the first electrode and the piezoelectric layer. | 04-23-2009 |
| 20090079520 | ACOUSTICALLY COUPLED RESONATORS HAVING RESONANT TRANSMISSION MINIMA - A bandpass filter includes input and output terminals, first and second acoustic resonators, and an acoustic coupling layer. The first acoustic resonator includes first and second electrodes, and a piezoelectric layer between the first and second electrodes. The first electrode of the first acoustic resonator is connected to the input terminal. The second acoustic resonator includes first and second electrodes, and a piezoelectric layer between the first and second electrodes. The acoustic coupling is provided between the second electrode of the first acoustic resonator and the first electrode of the second acoustic resonator. The output terminal is connected to the second electrode of the second acoustic resonator. A capacitor extends between the input terminal and the output terminal. The filter's frequency response includes at least two transmission zeros. | 03-26-2009 |
| 20090073811 | ACOUSTIC NAVIGATION DEVICE AND METHOD OF DETECTING MOVEMENT OF A NAVIGATION DEVICE - A navigation device for navigating a user interface of a processor-controlled device includes an acoustic transmitter adapted to transmit an acoustic signal, an acoustic receiver adapted to receive the acoustic signal and located at a fixed position with respect to the acoustic transmitter, and a measurement circuit coupled to an output of the acoustic receiver and adapted to determine a distance traversed by the navigation device as a function of time. | 03-19-2009 |
| 20090064477 | PIEZOELECTRIC OSCILLATING CIRCUIT, METHOD FOR MANUFACTURING THE SAME AND FILTER ARRANGEMENT - In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction. | 03-12-2009 |
