| Attofemto, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120127473 | OPTICALLY ENHANCED HOLOGRAPHIC INTERFEROMETRIC TESTING METHODS FOR THE DEVELOPMENT AND EVALUATION OF SEMICONDUCTOR DEVICES, MATERIALS, WAFERS, AND FOR MONITORING ALL PHASES OF DEVELOPMENT AND MANUFACTURE - Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture. | 05-24-2012 |
| 20110122415 | METHOD FOR OPTICALLY ENHANCED HOLOGRAHIC INTERFEROMETRIC TESTING FOR TEST AND EVALUATION OF SEMICONDUCTOR DEVICES AND MATERIALS - Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying magnification over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the feature or interior structures or internal surfaces of the semiconductor material or wafer. | 05-26-2011 |
| 20100091292 | HOLOGRAPHIC CONDITION ASSESSMENT SYSTEM FOR A STRUCTURE INCLUDING A SEMICONDUCTOR MATERIAL - An improved condition testing system and method integrated into microelectronic circuits includes a structure including a semiconductor material with a target portion and a second portion for determining the presence and nature of various external (e.g. magnetic field, microwave, bioelectric or incident radiation) or internal stresses (e.g. binary circuit-state or analog signal recognition) or conditions acting upon the material. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a test grating determined and shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use one or more diffraction structures, holograms, or holographic optical elements spaced apart from the circuit or electronic device under test to non-invasively optically test in parallel two or more targeted conditions having a shape, size, structure, intensity or orientation of the stress acting upon the material. | 04-15-2010 |
| 20090002717 | CONDITION ASSESSMENT SYSTEM FOR A STRUCTURE INCLUDING A SEMICONDUCTOR MATERIAL - An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating. | 01-01-2009 |
| 20080252898 | METHOD FOR OPTICALLY TESTING SEMICONDUCTOR DEVICES - A method for optically testing semiconductor devices or wafers using a holographic optical interference system with light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine and display characteristics within the semiconductor material. | 10-16-2008 |
