| ARACA Inc. Patent applications |
| Patent application number | Title | Published |
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| 20110312182 | METHOD AND APPARATUS FOR CHEMICAL-MECHANICAL PLANARIZATION - A method and apparatus for performing chemical-mechanical planarization (CMP) is disclosed, which in one embodiment includes a CMP tool for polishing a semiconductor wafer. The CMP tool includes a slurry mixture that has slurry beads. The slurry beads are formed of a polymer material. The slurry beads are used to remove summits and non-uniformities on the semiconductor wafer. In some embodiments the CMP tool includes a counter-face that replaces the polishing pad of a conventional CMP tool. In some embodiments the counter-face is made of polycarbonate. In another embodiment a slurry mixture for use with a CMP tool is disclosed. The slurry mixture includes slurry beads, where each of the slurry beads has a diameter of between 0.1 and 1000 microns, or in some embodiments a diameter of between 10 and 50 microns. | 12-22-2011 |
| 20110076924 | METHOD OF DETERMINING THE LUBRICATION MECHANISM IN CMP - The present invention is a method for obtaining data easily, accurately and effectively that may be used in determination of Sommerfeld Numbers and COF for CMP polishing. Using the Sommerfeld Numbers and COF values thus obtained the lubrication mechanism of CMP polishing with particular materials and under particular conditions can easily and reliably be studied. The method of the present invention is accomplished by use of CMP polishing tools capable of simultaneously measuring shear force and normal force, and rendering a value for the COF while simultaneously enabling the operator to change pressure on and relative velocity of the CMP wafer and CMP polishing pad in real time. Using the said CMP tool, the pressure and relative velocity may be varied separately or together for the desired length of time according to the needs of the operator so that within one CMP process multiple measurements may be taken under the same process conditions. | 03-31-2011 |
| 20100265576 | CONFOCAL MICROSCOPY PAD SAMPLE HOLDER THAT MEASURES DISPLACEMENT AND METHOD OF USING THE SAME - The present invention is a sample holder for confocal microscopy of CMP pad samples cut or otherwise removed from either new or used CMP pads that maintains a uniform load and pressure over the part of the sample visible to the confocal microscope by placing the pad behind a transparent window and holding it against the said window by a means comprising upper transparent window retaining means having an offset adjacent the transparent window having the same or essentially the same refractive index as the pad material so that when the pad is held against the transparent window, the edges of the pad are outside the outer edge of the transparent window; lower pad retaining means to press the pad under a known/load against the transparent window, which lower pad retaining means has a size less than the size of the pad; spherical force transmitting means pressed against the lower pad retaining means; through a load cell to measure the load transferred to the sample through lower pad retaining means, the spherical force transmitting means, the force transfer means and load cell from the posterior structural housing of the sample holder which is forced together with the said window retaining means by a force generating means; and means to adjust the known load and a method of confocal microscopy of new and used CMP pad samples to determine relative surface area and other characteristics using the said confocal sample. | 10-21-2010 |
| 20100216373 | METHOD FOR CMP UNIFORMITY CONTROL - A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to the bottom surface of the injector are utilized and some or all of which inlets are fitted with means for controlling the flow of fluid and adjustment is made to the said flow control means during or after polishing to adjust slurry delivery to the wafer surface to improve uniformity of removal rate at the wafer surface. | 08-26-2010 |
| 20100186479 | METHOD FOR COUNTING AND CHARACTERIZING AGGRESSIVE DIAMONDS IN CMP DIAMOND CONDITIONER DISCS - The present invention is a method for determining the location of and distinguishing aggressive diamonds from active diamonds on a diamond conditioner disc, comprising: (a) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (b) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (c) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, and (d) selecting the diamonds, the marks for which are the most pronounced and which comprise 50% or more of the total furrow area observed for all of the active diamonds in descending order of furrow are plus any diamonds in excess of the number needed to achieve said 50% or more whose individual furrow area is 2% or more, which diamonds are determined to be aggressive diamonds, or impressing the diamond conditioner disc under a load onto a hard surface and the impression of the most aggressive diamonds in the hard surface being confirmed by microscopic examination to in turn confirm the position and aggressiveness of the aggressive diamonds observed or (e) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (f) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (g) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, (h) the hard surface further comprises a layer of contrasting material such that when the diamond conditioner disc moves across the hard surface, the said diamond conditioner disc crosses the limits of the layer entirely from one end to the other and scratches the layer of contrasting material on the hard surface thereby leaving a visible mark, (i) the said layer is between 8 and 15 microns thick and (j) selecting the diamonds which cut entirely through the said layer allowing backlighting to be easily viewed. | 07-29-2010 |
| 20100159804 | METHOD OF OBSERVING PATTERN EVOLUTION USING VARIANCE AND FOURIER TRANSFORM SPECTRA OF FRICTION FORCES IN CMP - A method of determining pattern evolution of a semiconductor wafer during chemical mechanical polishing prior to polishing end point by determining the periodic change in the variance and FT or FFT frequency spectra of shear force and change in variance and FT or FFT frequency spectra of COF, shear force and/or down force between the semiconductor wafer and the polishing pad. By comparing features of the data and spectra thus obtained, analysis leading to a deeper understanding of the changes that occur as CMP processes occur as well as diagnostic analysis of specific CMP processes and specific wafers can be accomplished | 06-24-2010 |
| 20100107726 | DEVICE FOR DETERMINING THE COEFFICIENT OF FRICTION OF DIAMOND CONDITIONER DISCS AND A METHOD OF USE THEREOF - A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof. The device is a solid base means comprising a block of granite with a smooth flat upper surface, a diamond conditioner disc counter surface means comprising a removable sheet of polycarbonate, a means for moving the diamond conditioner disc comprising an assembly parallel to and perpendicular to the surface of the said slab and overlain material along which a plate, the surface of which is parallel to the surface of the assembly and perpendicular to the surface of the said slab and overlain material, is moved by a screw, a means for securing the diamond conditioner disc comprising a holder bolted to the said plate that is capable of riding just above the surface of the slab and overlain material with an anterior face with respect to the direction of motion that is concave and capable of securely holding a diamond conditioner disc placed grinding face down upon the said overlain material the top of which is open so that load may be applied to the diamond conditioner disc and a means for measuring the shear force imparted by the moving diamond conditioner disc comprising a load cell. Shear force and down force are determined using the above apparatus and the coefficient of friction of the diamond conditioner disc and the said sheet are calculated therefrom. | 05-06-2010 |
