| 20100216312 | RESIST REMOVING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND RESIST REMOVING APPARATUS - This invention provides a resist removing apparatus for removing a resist comprising a deteriorated layer and an undeteriorated layer from a substrate. The apparatus carries out the step of bringing radicals, reduced by subjecting any one of or a mixture of two or more of nitrogen, oxygen, hydrogen, and steam to plasma treatment under a low pressure, into contact with the substrate to remove the resist, and the step of bringing ozone water into contact with the substrate to remove the resist. In the step of removing the resist by radicals, a large part of the undeteriorated layer is allowed to remain by regulating the radical contact time depending upon conditions for the formation of the deteriorated layer on the resist surface. Alternatively, a large part of the undeteriorated layer may be allowed to remain by conducting process control according to the results of analysis of a reactant gas discharged during the removal of the resist. | 08-26-2010 |
