| Applied Materials, Inc. Patent applications |
| Patent application number | Title | Published |
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| 20120129351 | COMPOSITE REMOVABLE HARDMASK - A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels. | 05-24-2012 |
| 20120129275 | DUAL-BULB LAMPHEAD CONTROL METHODOLOGY - The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning. | 05-24-2012 |
| 20120125488 | Method of producing a plasma-resistant thermal oxide coating - A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. | 05-24-2012 |
| 20120122320 | Method Of Processing Low K Dielectric Films - Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described. | 05-17-2012 |
| 20120122302 | Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films - Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films. | 05-17-2012 |
| 20120122253 | APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE - Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers. | 05-17-2012 |
| 20120121823 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM - An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack (<2 kÅ) to about or less than 200 Å, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity. The improved adhesion layer provides high adhesion energy for better adhesion with ultra low dielectric constant films to underlying barrier/liner layers. The resulting low dielectric film has nanometer-sized pores and tighter pore-size distribution, yielding a low dielectric constant film with a dielectric constant of about 2.5 or less. | 05-17-2012 |
| 20120121799 | Method For Segregating The Alloying Elements And Reducing The Residue Resistivity Of Copper Alloy Layers - Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer. | 05-17-2012 |
| 20120119218 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXY OF GROUP III-NITRIDE - A method for forming a single crystalline Group-III Nitride film. A substrate is provided, having a first passivation layer, a monocrystalline layer, and a second passivation layer. The substrate is patterned to form a plurality of features with elongated sidewalls having a second crystal orientation. Group-III Nitride films are formed on the elongated sidewalls, but not on the first or second passivation layers. In one embodiment, the dimensions of the patterned features and the film deposition process result in a single crystalline Group-III Nitride film having a third crystal orientation normal to the substrate surface. In another embodiment, the dimensions and orientation of the patterned features and the film deposition process result in a plurality of single crystalline Group-III Nitride films. In other embodiments, additional layers are formed on the Group-III Nitride film or films to form semiconductor devices, for example, a light-emitting diode. | 05-17-2012 |
| 20120118510 | METHOD FOR DEBONDING COMPONENTS IN A CHAMBER - Embodiments of the invention provide a method for debonding chamber component used in a semiconductor processing chamber. In one embodiment, a method for debonding chamber components used in a semiconductor processing chamber includes providing a first chamber component and a second chamber component bonded by an adhesive material disposed at an interface defined between the first and the second chamber components, soaking the bonded first and the second chamber components into an organic solution for between about 8 hours to about 240 hours, and removing the bonded first and the second chamber from the organic solution; and mechanically separating the soaked first and the second chamber components. | 05-17-2012 |
| 20120118225 | EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE - Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure. | 05-17-2012 |
| 20120118224 | TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD - Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes. | 05-17-2012 |
| 20120113559 | ELECTROSTATIC DISCHARGE PREVENTION FOR LARGE AREA SUBSTRATE PROCESSING SYSTEM - Embodiments of the invention relate to methods and apparatus for minimizing electrostatic discharge in processing and testing systems utilizing large area substrates in the production of flat panel displays, solar panels, and the like. In one embodiment, an apparatus is described. The apparatus includes a testing chamber, a substrate support disposed in the testing chamber, the substrate support having a substrate support surface, a structure disposed in the testing chamber, the structure having a length that spans a width of the substrate support surface, the structure being linearly movable relative to the substrate support, and a brush device having a plurality of conductive bristles coupled to the structure and spaced a distance away from the substrate support surface of the substrate support, the brush device electrically coupling the support surface to ground through the structure. | 05-10-2012 |
| 20120112186 | TREATMENT OF GATE DIELECTRIC FOR MAKING HIGH PERFORMANCE METAL OXIDE AND METAL OXYNITRIDE THIN FILM TRANSISTORS - Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of treating the gate dielectric involves exposing the gate dielectric layer to N | 05-10-2012 |
| 20120111272 | MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING - In one embodiment an integrated processing system for manufacturing compound nitride semiconductor devices comprising a metal organic chemical vapor deposition (MOCVD) chamber operable to form a gallium nitride (GaN) layer over one or more substrates with a thermal chemical-vapor-deposition process and to form a multi-quantum well (MQW) layer over the GaN layer, and a halogen containing gas source coupled with the MOCVD chamber operable for flowing a halogen containing gas into the MOCVD chamber to remove at least a portion of unwanted deposition build-up deposited when forming the GaN layer over the one or more substrate from one or more interior surfaces of the MOCVD chamber prior to forming the MQW layer over the GaN layer, wherein the halogen containing gas is selected from the group comprising fluorine, chlorine, bromine, iodine, HI gas, HCl gas, HBr gas, HF gas, NF3, and combinations thereof is provided. | 05-10-2012 |
| 20120109355 | SUBSTRATE PROCESSING SYSTEM - Embodiments of the present invention provide an apparatus and method for processing substrates in a processing system that has an increased system throughput, improved system uptime, and improved device yield performance, while maintaining a repeatable and accurate substrate processing. The system may include multiple processing nests laterally positionable by use of a planar motor via multiple planar movers controlled by a system controller. A substrate supported by each processing nest may be angularly positionable by a rotary actuator. The system may be used in screen printing, ink jet printing, thermal processing, device testing, and material removal processes, among others. | 05-03-2012 |
| 20120108081 | APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS - Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing. | 05-03-2012 |
| 20120108079 | Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making - Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process. The substrate is then exposed sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species sufficient to form at least a partial layer of one or more of silicon nitride or silicon on the substrate during a second atomic layer deposition process. The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film. | 05-03-2012 |
| 20120108062 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
| 20120108058 | METHODS OF FORMING LAYERS ON SUBSTRATES - Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer. | 05-03-2012 |
| 20120107996 | SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS - Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer. | 05-03-2012 |
| 20120107504 | EVAPORATION SYSTEM AND METHOD - A deposition system is provided which is adapted for depositing a thin film onto a substrate. The deposition system includes a substrate carrier adapted for carrying the substrate and at least one tilted evaporator crucible. The at least one tilted evaporator crucible is adapted for directing evaporated deposition material towards the substrate in a main emission direction. The main direction emission of the tilted evaporator crucible is different from a direction normal to the substrate. | 05-03-2012 |
| 20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
| 20120105088 | APPARATUS AND METHOD FOR TESTING BACK-CONTACT SOLAR CELLS - The present invention relates to an apparatus for testing of back-contact solar cells. In one embodiment, the apparatus includes a support plate having vacuum holes with suction cups partially within the holes and probe pins within the suction cups. A solar cell is placed into contact with the suction cups and vacuum forces are applied through the suction cups to force contact pads of the solar cell against the probe pins. In another embodiment, the apparatus includes a support plate having probe pin holes with hollow probe pins located therein. Vacuum forces are applied through the hollow probe pins to force contact pads of the solar cell against the probe pins. The support plate in either embodiment may be an end effector of a robot used to pick up the solar cell and hold the front surface of the solar cell adjacent a light source while performing light induced testing. | 05-03-2012 |
| 20120104950 | METHODS FOR CALIBRATING RF POWER APPLIED TO A PLURALITY OF RF COILS IN A PLASMA PROCESSING SYSTEM - Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level. | 05-03-2012 |
| 20120104703 | ELECTROSTATIC CHUCK AND SHOWERHEAD WITH ENHANCED THERMAL PROPERTIES AND METHODS OF MAKING THEREOF - Embodiments of the present invention generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present invention provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding material to outgas volatile species from the bonding material. The outgassed volatile species accumulates to at least 0.05% in mass of the bonding material. The method further includes contacting a second component and the enhanced bonding layer to join the first and second components. | 05-03-2012 |
| 20120104616 | METHOD FOR DEPOSITING A THIN FILM ELECTRODE AND THIN FILM STACK - A method for depositing at least one thin-film electrode onto a transparent conductive oxide film is provided. At first, the transparent conductive oxide film is deposited onto a substrate to be processed. Then, the substrate and the transparent conductive oxide film are subjected to a processing environment containing a processing gas acting as a donor material or an acceptor material with respect to the transparent conductive oxide film. The at least one thin-film electrode is deposited onto at least portions of the transparent conductive oxide film. A partial pressure of the processing gas acting as the donor material or the acceptor material with respect to the transparent conductive oxide film is varied while depositing the at least one thin-film electrode onto at least portions of the transparent conductive oxide film. Thus, a modified transparent conductive oxide film having reduced interface resistance and bulk resistance can be obtained. | 05-03-2012 |
| 20120103970 | HEATER WITH INDEPENDENT CENTER ZONE CONTROL - A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support. | 05-03-2012 |
| 20120103939 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS - The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway. | 05-03-2012 |
| 20120103936 | METHODS FOR REDUCING PHOTORESIST INTERFERENCE WHEN MONITORING A TARGET LAYER IN A PLASMA PROCESS - A method and apparatus for monitoring a target layer in a plasma process having a photoresist layer is provided. The method is useful in removing noise associated with the photoresist layer, and is particularly useful when signals associated with the target layer is weak, such as when detecting an endpoint for a photomask etching process. | 05-03-2012 |
| 20120103800 | Homing of arbitrary scan path of a rotating magnetron - A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed. | 05-03-2012 |
| 20120103526 | HIGH PURITY ALUMINUM COATING HARD ANODIZATION - The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. The chamber component includes a polished high purity aluminum coating and a hard anodized coating that is resistive to the plasma processing environment. | 05-03-2012 |
| 20120103524 | PLASMA PROCESSING APPARATUS WITH REDUCED EFFECTS OF PROCESS CHAMBER ASYMMETRY - Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support. | 05-03-2012 |
| 20120103425 | Flow Meter With Improved Thermal Stability And Methods Of Use - Devices and methods for controlling flow to a processing chamber are disclosed. The devices comprise a flow meter, an inlet tube in fluid communication with the flow meter, an outlet tube in fluid communication with the outlet of the flow meter, and thermal insulation encompassing at least a portion of the flow meter, at least a portion of the inlet tube and at least a portion of the outlet tube. | 05-03-2012 |
| 20120103388 | MONOLITHIC MODULE ASSEMBLY USING BACK CONTACT SOLAR CELLS AND METAL RIBBON - Embodiments of the invention contemplate the formation of a solar cell module comprising an array of interconnected solar cells that are formed using an automated processing sequence that is used to form a novel planar solar cell interconnect structure. In one embodiment, the module structure described herein includes a patterned adhesive layer that is disposed on a backsheet to receive and bond a plurality of conducting ribbons thereon. The substantially planar bonded conducting ribbons are then used to interconnect an array of solar cell devices to form a solar cell module that can be electrically connected to one or more external components, such as an electrical power grid, satellites, electronic devices or other similar power requiring units. Embodiments of the invention may further provide a roll-to-roll system that is configured to serially form a plurality of solar cell modules over different portions of a backsheet material received from a roll of backsheet material. | 05-03-2012 |
| 20120103263 | PRE-HEAT RING DESIGNS TO INCREASE DEPOSITION UNIFORMITY AND SUBSTRATE THROUGHPUT - Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion. | 05-03-2012 |
| 20120103257 | DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing. | 05-03-2012 |
| 20120100779 | APPARATUS AND METHOD FOR COMPENSATION OF VARIABILITY IN CHEMICAL MECHANICAL POLISHING CONSUMABLES - Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe. | 04-26-2012 |
| 20120100312 | METHODS FOR ENHANCING TANTALUM FILAMENT LIFE IN HOT WIRE CHEMICAL VAPOR DEPOSITION PROCESSES - Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H | 04-26-2012 |
| 20120099949 | APPARATUS FOR PROVIDING A ROTATION CARRIER MAGAZINE, AND METHOD OF OPERATING THEREOF - An apparatus for supporting a plurality of carriers or substrates is described. The apparatus includes a vacuum chamber and a rotatable support for supporting the plurality of carriers or substrates, wherein the support is provided within the vacuum chamber and is configured for rotating the supported plurality of carriers or substrates around a rotation axis. | 04-26-2012 |
| 20120097908 | LOW FORCE SUBSTRATE LIFT - Apparatus for lifting substrates from substrate supports are provided herein. In some embodiments, a substrate lift may include: a substrate support having a plurality of lift pins movably disposed through the substrate support to selectively raise and lower a substrate; an actuator coupled to the plurality of lift pins to control the position of the plurality of lift pins, wherein the actuator has a first port for receiving air at a first pressure to cause the actuator to extend the plurality of lift pins and a second port for receiving air at a second pressure to cause the actuator to retract the plurality of lift pins; and a pressure regulator coupled to the actuator to reduce the first pressure to a magnitude that is less than that of the second pressure. | 04-26-2012 |
| 20120097870 | APPARATUS FOR FORMING A MAGNETIC FIELD AND METHODS OF USE THEREOF - Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils. | 04-26-2012 |
| 20120097332 | SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE - Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground. | 04-26-2012 |
| 20120097330 | DUAL DELIVERY CHAMBER DESIGN - A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead. | 04-26-2012 |
| 20120097266 | APPARATUS FOR CONTROLLING GAS DISTRIBUTION USING ORIFICE RATIO CONDUCTANCE CONTROL - Apparatus for controlling gas distribution are provided. In some embodiments, apparatus for controlling gas distribution may include a first flow path from an inlet to a first outlet; a plurality of first orifices disposed within the first flow path; a plurality of first valves that control gas flow through the plurality of first orifices to control a total gas flow at the first outlet; a second flow path from the inlet to a second outlet; a plurality of second orifices disposed along the second flow path; a plurality of second valves that control gas flow through respective ones of the plurality of second orifices to control a total gas flow at the second outlet; and a mounting block having the plurality of first valves and second valves coupled thereto, wherein at least a portion of the first flow path and the second flow path is disposed within the mounting block. | 04-26-2012 |
| 20120097093 | LOAD LOCK CHAMBER, SUBSTRATE PROCESSING SYSTEM AND METHOD FOR VENTING - A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided. | 04-26-2012 |
| 20120094468 | TWO SILICON-CONTAINING PRECURSORS FOR GAPFILL ENHANCING DIELECTRIC LINER - Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material. | 04-19-2012 |
| 20120091108 | METHODS AND APPARATUS FOR CONTROLLING SUBSTRATE TEMPERATURE IN A PROCESS CHAMBER - Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones. | 04-19-2012 |
| 20120091104 | MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY - An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance. | 04-19-2012 |
| 20120091099 | METHODS AND APPARATUS FOR RECOVERY AND REUSE OF REAGENTS - Methods and apparatus for recovery and reuse of reagents are provided herein. In some embodiments, a system for processing substrates may include a process chamber for processing a substrate; a reagent source coupled to the process chamber to provide a reagent to the process chamber; and a reagent recovery system to collect, and at least one of purify or concentrate the reagent recovered from an effluent exhausted from the process chamber. In some embodiments, a method for recovering unreacted reagent may include providing reagent from a reagent source to a process chamber; exposing a substrate disposed in the process chamber to the reagent, forming an effluent; exhausting the effluent from the process chamber; and recovering unreacted reagent from the effluent in a reagent recovery system. | 04-19-2012 |
| 20120091098 | HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVELY COUPLED PLASMA REACTOR WITH IMPROVED UNIFORMITY - Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane. | 04-19-2012 |
| 20120091095 | METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS - In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF | 04-19-2012 |
| 20120090990 | Deposition Apparatus and Methods to Reduce Deposition Asymmetry - One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder. | 04-19-2012 |
| 20120090784 | CHAMBER LID HEATER RING ASSEMBLY - Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base. | 04-19-2012 |
| 20120090691 | QUARTZ SHOWERHEAD FOR NANOCURE UV CHAMBER - Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region. | 04-19-2012 |
| 20120088371 | METHODS FOR ETCHING SUBSTRATES USING PULSED DC VOLTAGE - Methods for etching substrates using a pulsed DC voltage are provided herein. In some embodiments, a method for method for etching a substrate disposed on a substrate support within a process chamber may include providing a process gas to the process chamber; forming a plasma from the process gas; applying a pulsed DC voltage to a first electrode disposed within the process chamber; and etching the substrate while applying the pulsed DC voltage. | 04-12-2012 |
| 20120088369 | Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors - Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers. | 04-12-2012 |
| 20120088356 | INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES - An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements. | 04-12-2012 |
| 20120088327 | Methods of Soldering to High Efficiency Thin Film Solar Panels - Methods for forming a thin film solar cell are provided. In one aspect, a thin film solar cell is formed by providing a back contact comprising a reflective material and an interface metal, applying a solder paste slurry that include a paste flux and metal particles to the interface metal and soldering at least one buss wire to back contact. | 04-12-2012 |
| 20120088193 | Radiation Patternable CVD Film - Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer. | 04-12-2012 |
| 20120086464 | IN-SITU VHF VOLTAGE/CURRENT SENSORS FOR A PLASMA REACTOR - An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. | 04-12-2012 |
| 20120085733 | SELF ALIGNED TRIPLE PATTERNING - Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned triple patterning (SATP) process. A stack of layers is patterned near the optical resolution of a photolithography system using a high-resolution photomask. The heterogeneous stacks are selectively etched to undercut a hard mask layer beneath overlying cores. A dielectric layer, which is flowable during formation, is deposited and fills the undercut regions as well as the regions between the heterogeneous stacks. The dielectric layer is anisotropically etched and a conformal spacer is deposited on and between the cores. The spacer is anisotropically etched to leave two spacers between each core. The cores are stripped and the spacers are used together with the remaining hard mask features to pattern the substrate at triple the density of the original pattern. | 04-12-2012 |
| 20120083133 | AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS - Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer. | 04-05-2012 |
| 20120082884 | ELECTROSPINNING FOR INTEGRATED SEPARATOR FOR LITHIUM-ION BATTERIES - Embodiments of the present invention relate generally to lithium-ion batteries, and more specifically, to batteries having integrated separators and methods of fabricating such batteries. In one embodiment, a lithium-ion battery having an electrode structure is provided. The lithium-ion battery comprises an anode stack, a cathode stack, and a porous electrospun polymer separator comprising a nano-fiber backbone structure. The anode stack comprises an anodic current collector and an anode structure formed over a first surface of the anodic current collector. The cathode stack comprises a cathodic current collector and a cathode structure formed over a first surface of the cathodic current collector. The porous electrospun polymer separator is positioned between the anode structure and the cathode structure. | 04-05-2012 |
| 20120080779 | ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION - Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron. | 04-05-2012 |
| 20120080753 | GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS - Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer. | 04-05-2012 |
| 20120080309 | SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL - The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one target over the substrate; varying the relative position between the at least one target and the substrate to a first position (I), which first position is maintained for a predetermined first time interval; and varying the relative position between the at least one target and the substrate to a second position (II), which second position is maintained for a predetermined second time interval. The present disclosure further describes a system for coating a substrate. | 04-05-2012 |
| 20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER - Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer. | 04-05-2012 |
| 20120080081 | THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK - A method of manufacturing a layer stack adapted for a thin-film solar cell is and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer a first p-i-n junction configured for the solar cell, depositing a first intrinsic-type layer of a first p-i-n junction configured for the solar cell and depositing a further conductive-layer with a conductivity opposite to the first conductive-type layer first p-i-n junction configured for the solar cell. The method further includes providing for a SiOx-containing intermediate layer by chemical vapor deposition and depositing a second p-i-n junction configured for the solar cell, wherein the SiOx-containing intermediate layer is provided within the a further conductive-type layer, and wherein the SiOx-containing layer has a thickness of 17 nm or less. | 04-05-2012 |
| 20120079982 | MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT - A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively. | 04-05-2012 |
| 20120077335 | METHODS FOR DEPOSITING GERMANIUM-CONTAINING LAYERS - Methods for depositing germanium-containing layers on silicon-containing layers are provided herein. In some embodiments, a method may include depositing a first layer atop an upper surface of the silicon-containing layer, wherein the first layer comprises predominantly germanium (Ge) and further comprises a lattice adjustment element having a concentration selected to enhance electrical activity of dopant elements, wherein the dopant elements are disposed in at least one of the first layer or in an optional second layer deposited atop of the first layer, wherein the optional second layer, if present, comprises predominantly germanium (Ge). In some embodiments, the second layer is deposited atop the first layer. In some embodiments, the second layer comprises germanium (Ge) and dopant elements. | 03-29-2012 |
| 20120076574 | Vacuum Process Chamber Component and Methods of Making - A vacuum process chamber component comprising two separate pieces with an o-ring between the pieces and solder bonded together is described. The component may be an electrostatic chuck comprising a ceramic electrostatic puck and a metal baseplate with at least one o-ring therebetween and joined by a solder bond is described. Methods of making and using vacuum process chamber component are also described. | 03-29-2012 |
| 20120075108 | SYSTEM AND METHOD FOR VOLTAGE-BASED PLASMA EXCURSION DETECTION - The present invention provides a system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring direct current (DC) bias voltage on an RF power electrode of a plasma processing chamber. The monitored DC bias voltage is then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In certain embodiments, multiple processing regions can be monitored by a single detection control unit. | 03-29-2012 |
| 20120074951 | SYSTEM AND METHOD FOR CURRENT-BASED PLASMA EXCURSION DETECTION - A system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring RF current just prior to reaching an RF power electrode of a plasma processing chamber is provided. The monitored RF current may be converted to an RF voltage and then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In one embodiment, the RF current amplified and converted to a digital signal for digital filtering and processing. In certain embodiments, multiple processing regions can be monitored by a single detection control unit. | 03-29-2012 |
| 20120074126 | WAFER PROFILE MODIFICATION THROUGH HOT/COLD TEMPERATURE ZONES ON PEDESTAL FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT - A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface. | 03-29-2012 |
| 20120073501 | PROCESS CHAMBER FOR DIELECTRIC GAPFILL - A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber. | 03-29-2012 |
| 20120070999 | REPLACEABLE SUBSTRATE MASKING ON CARRIER AND METHOD FOR PROCESSING A SUBSTRATE - A holding device adapted for holding a mask and a substrate during processing is described. The holding device includes a substrate carrier adapted for carrying the substrate; and a mask for masking the substrate, wherein the mask is releasably connected to the substrate carrier; wherein the substrate carrier or the mask has at least one recess adapted for receiving a cover for covering the substrate carrier during deposition. | 03-22-2012 |
| 20120070982 | METHODS FOR FORMING LAYERS ON A SUBSTRATE - Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness. | 03-22-2012 |
| 20120070957 | AIR GAP FORMATION - A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. | 03-22-2012 |
| 20120070136 | Transparent Reflector Plate For Rapid Thermal Processing Chamber - The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate. | 03-22-2012 |
| 20120069174 | APPARATUS AND METHOD FOR ANALYZING THERMAL PROPERTIES OF COMPOSITE STRUCTURES - Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support. | 03-22-2012 |
| 20120064698 | MULTIPLE SECTION SHOWERHEAD ASSEMBLY - Embodiments of the present invention generally provide a method and apparatus that may be utilized for deposition of Group III-nitride films using MOCVD and/or HVPE hardware. In one embodiment, the apparatus is a showerhead assembly made of multiple sections that are isolated from one another and attached to a top plate. Each showerhead section has separate inlets and passages for delivering separate processing gases into a processing volume of a processing chamber without mixing the gases prior to entering the processing volume. In one embodiment, each showerhead section includes a temperature control manifold for flowing a cooling fluid through the respective showerhead section. By providing multiple, isolated showerhead sections, manufacturing complexity and costs are significantly reduced as compared to conventionally manufacturing the entire showerhead from a single block or stack of plates. | 03-15-2012 |
| 20120064225 | SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM - In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exposed to a dual sided spray deposition process, wherein each of the one or more processing regions are further divided into a first spray deposition region and a second spray deposition region for simultaneously spraying an anodically active or cathodically active material onto opposing sides of a portion of the flexible conductive substrate, wherein each of the first and second spray deposition regions comprise a spray dispenser cartridge for delivering the activated material toward the flexible conductive substrate and a movable collection shutter. | 03-15-2012 |
| 20120063874 | LOW PROFILE DUAL ARM VACUUM ROBOT - Embodiments of dual arm substrate transfer robots are provided herein. In some embodiments, a dual arm substrate transfer robot may include a central actuator to rotate the transfer robot about a central axis; a linkage arm having a first end and a generally opposing second end, wherein the linkage arm is coupled to the central actuator proximate a center of the linkage arm between the first and second ends; a first forearm rotatably coupled to the first end of the linkage arm; a second forearm rotatably coupled to the second end of the linkage arm; a first forearm actuator to control the rotation of the first forearm with respect to the linkage arm; and a second forearm actuator to control the rotation of the second forearm with respect to the linkage arm, wherein the first and second forearm actuators are laterally offset from the central actuator. | 03-15-2012 |
| 20120061605 | GATE VALVE - In one embodiment, a gate valve is provided that includes a seal plate disposed in a housing. An inflatable biasing member is retained on a first side of the seal plate and is positioned to surround a first opening formed through the housing. A ring seal is retained on a second side of the plate opposite the first side and is positioned to surround a second opening formed through the housing. At least one of the inflatable biasing member and the ring seal are adapted to create a vacuum seal around the first and second openings, respectively, when the inflatable biasing member is inflated. | 03-15-2012 |
| 20120060971 | METHODS AND LOADPORT APPARATUS FOR PURGING A SUBSTRATE CARRIER - In a first aspect, a loadport is provided. The loadport has a plate adapted to couple to a door of a substrate carrier to open the substrate carrier wherein the plate includes a first opening adapted to couple to a first port in the door of the substrate carrier on a first side of the plate and to couple to a gas source on a second side of the plate, and wherein the loadport is adapted to allow a flow of gas into the substrate carrier via the first opening in the plate. Methods of purging substrate carriers are provided, as are numerous other aspects. | 03-15-2012 |
| 20120060919 | JUNCTION BOX FOR A PHOTOVOLTAIC SOLAR PANEL - A junction box for a solar panel comprises a housing, a lid, a first connector and a second connector. The housing comprises sidewalls and a top wall defining an interior space. The first coupling comprises a first contact element and the second coupling comprises a second contact element. Said contact elements penetrate at least one of the sidewalls, so that the contact elements provide an electrical contact from external contact elements to internal contact elements, such as solder tails. Internal contact elements are arranged at least partially in said interior space. The top wall comprises an opening extending only partially in said top wall. Said opening is located such in the top wall that access to said solder tails in a substantially perpendicular direction to the surface of a solar panel for connecting the solder tail to the solar panel is provided. | 03-15-2012 |
| 20120058281 | METHODS FOR FORMING LOW MOISTURE DIELECTRIC FILMS - A method for forming a pre-metal dielectric (PMD) layer or an inter-metal dielectric (IMD) layer over a substrate includes placing the substrate in a chemical vapor deposition (CVD) process chamber and forming a first oxide layer over the substrate in the CVD process chamber. The first oxide layer is formed using a thermal CVD process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The method also includes forming a second oxide layer over the first oxide layer in the CVD process chamber. The second oxide layer is formed using a plasma enhanced chemical vapor deposition (PECVD) process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The substrate remains in the CVD process chamber during formation of the first oxide layer and the second oxide layer. | 03-08-2012 |
| 20120056290 | THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK - A method of manufacturing a layer stack adapted for a thin-film solar cell and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer, wherein the depositing includes: providing for a first SiOx-containing anti-reflection layer by chemical vapor deposition. The method further includes depositing a first intrinsic-type layer and depositing a further conductive-type layer with a conductivity opposite to the first conductive-type layer. | 03-08-2012 |
| 20120056173 | STAGGERED THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing layer. | 03-08-2012 |
| 20120055535 | Photovoltaic Devices With Textured Glass Superstrate - Embodiments of the invention are directed to photovoltaic cells comprising a textured superstrate, a front contact layer, a photoabsorber layer and a back contact layer. The textured superstrate has a plurality of craters with an average opening angle, an average aspect ratio and an average depth. Methods of making such photovoltaic cells and photovoltaic modules are also described. | 03-08-2012 |
| 20120055534 | Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture - Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules. | 03-08-2012 |
| 20120045904 | METHODS FOR FORMING A HYDROGEN FREE SILICON CONTAINING DIELECTRIC FILM - Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF | 02-23-2012 |
| 20120045852 | AUTOTUNED SCREEN PRINTING PROCESS - Embodiments of the invention generally provide apparatus and methods of screen printing a pattern on a substrate. In one embodiment, a patterned layer is printed onto a surface of a substrate along with a plurality of alignment marks. The locations of the alignment marks are measured with respect to a feature of the substrate to determine the actual location of the patterned layer. The actual location is compared with the expected location to determine the positional error of the patterned layer placement on the substrate. This information is used to adjust the placement of a patterned layer onto subsequently processed substrates. | 02-23-2012 |
| 20120045631 | INDEX MODIFIED COATING ON POLYMER SUBSTRATE - The invention includes the structure of a multilayer protective coating, which may have, among other properties, scratch resistance, UV absorption, and an effective refractive index matched to a polymer substrate such as polycarbonate. Each layer may contain multiple components consisting of organic and inorganic materials. The multilayer protective coating includes interleaved organic layers and inorganic layers. The organic layers may have 20% or more organic compounds such as SiO | 02-23-2012 |
| 20120043538 | PROCESS TO MAKE METAL OXIDE THIN FILM TRANSISTOR ARRAY WITH ETCH STOPPING LAYER - The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel. | 02-23-2012 |
| 20120043518 | VARIABLE RESISTANCE MEMORY ELEMENT AND FABRICATION METHODS - An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1×10 | 02-23-2012 |
| 20120043023 | SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR - The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution. | 02-23-2012 |
| 20120042825 | EXTENDED LIFE DEPOSITION RING - A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body. | 02-23-2012 |
| 20120040592 | APPARATUS AND METHOD FOR TEMPERATURE CONTROL DURING POLISHING - Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad. | 02-16-2012 |
| 20120040536 | A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY - Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like. | 02-16-2012 |
| 20120037503 | ROTATABLE SPUTTER TARGET BASE, ROTATABLE SPUTTER TARGET, COATING INSTALLATION, METHOD OF PRODUCING A ROTATABLE SPUTTER TARGET, TARGET BASE CONNECTION MEANS, AND METHOD OF CONNECTING A ROTATABLE TARGET BASE DEVICE FOR SPUTTERING INSTALLATIONS TO A TARGET BASE SUPPORT - A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder ( | 02-16-2012 |
| 20120037475 | SUBSTRATE INVERTING SYSTEM - A method and apparatus for performing high-speed substrate inverting to facilitate photovoltaic fabrication processing of either substrate surface, comprising two stacked conveyors which are rotated in tandem and positioned to simultaneously engage both surfaces of a substrate to enable loading, inverting, and dispensing of the substrates traveling along the substrate production flow plane of an automated production system, and further having provisions to continually remove processing and environmental debris that may be collected on the conveyer belts as the result of coming into contact with substrate surfaces and facilitating cleaning of processing and environmental debris directly from substrate surfaces. | 02-16-2012 |
| 20120037181 | CLEANING METHODS FOR IMPROVED PHOTOVOLTAIC MODULE EFFICIENCY - Embodiments of the present invention generally relate to methods for cleaning a substrate prior to a deposition process. The methods generally include multiple cleaning solutions for removing contaminants from a surface of a substrate. The multiple solutions generally have different compositions, and each of the solutions contain one or more additives selected to remove a variety of contaminants. Mechanical agitation may also be utilized to remove contaminants from the surface of a substrate. After cleaning a substrate, a material may be deposited on the substrate surface. | 02-16-2012 |
| 20120037068 | COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY - Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate. | 02-16-2012 |
| 20120034844 | SPECTROGRAPHIC MONITORING USING INDEX TRACKING AFTER DETECTION OF LAYER CLEARING - A method of controlling polishing includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, polishing a substrate having a second layer overlying a first layer, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, detecting exposure of the first layer, fitting a function to a portion of the sequence of index values corresponding to spectra measured after detection of exposure of the first layer, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function. | 02-09-2012 |
| 20120034761 | METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE - Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate. | 02-09-2012 |
| 20120034469 | Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide - A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. | 02-09-2012 |
| 20120034382 | SUBSTRATE SUPPORT MATERIAL USEFUL FOR SCREEN PRINTING PROCESSES - The present invention provides a support material ( | 02-09-2012 |
| 20120034136 | SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING - A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element. | 02-09-2012 |
| 20120033340 | ELECTROSTATIC CHUCK AND METHODS OF USE THEREOF - An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk. | 02-09-2012 |
| 20120033235 | SYSTEM AND METHOD WITH AUTOMATIC ADJUSTMENT FUNCTION FOR MEASURING THE THICKNESS OF SUBSTRATES - A system for measuring the thickness of substrates in a vacuum chamber is provided. The system includes a sender adapted to emit electromagnetic radiation and a receiver including a multi-zone sensor for detecting the electromagnetic radiation. The multi-zone sensor includes a first detection zone for measuring the thickness of the substrates and a second detection zone adapted to generate a signal indicative of an alignment between the sender and the receiver. The system further includes an adjustment system adapted to automatically adjust the sender and the receiver with respect to each other based on the signal. Further, a method for adjustment of a sender and a receiver relative to each other is provided. | 02-09-2012 |
| 20120031479 | THIN FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK - Methods and devices for manufacturing a TCO layer of a thin film solar cell over a transparent substrate are described. Thereby, a first ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the substrate with a first set of deposition parameters, a second ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the first ZnO-containing layer with a second set of deposition parameters, at least one of the deposition parameters of the second set of deposition parameters is different from the corresponding parameter of the first set of deposition parameters; and the second ZnO-containing layer is textured. | 02-09-2012 |
| 20120031425 | MODULES AND PROCESSES FOR METAL PARTICLES REMOVAL - Embodiments of the present invention provide an apparatus and methods for processing solar cell devices. In one embodiment, a method removing particles from edge regions of the solar cell device by a cleaning module with a constant loading applied onto a back surface of the solar cell device, wherein the cleaning modules has two or more roller-type brushes disposed at opposed sides of a rotation table located before and/or after a quality assurance stage configured to measure and correct defects in the solar cell device, and transferring the solar cell device into an edge deletion station in which an electromagnetic radiation energy is used to remove materials from a top surface of the solar cell device. The roller-type brushes include non-abrasive bristles configured to remove unwanted material from the periphery region of the solar cell device prior to transferring into the edge delete station. | 02-09-2012 |
| 20120031335 | VERTICAL INLINE CVD SYSTEM - The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system. | 02-09-2012 |
| 20120031333 | VERTICAL INLINE CVD SYSTEM - The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system. | 02-09-2012 |
| 20120031332 | Water cooled gas injector - A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O | 02-09-2012 |
| 20120028813 | Selecting Reference Libraries For Monitoring Of Multiple Zones On A Substrate - A method of configuring a polishing monitoring system includes receiving user input selecting a plurality of libraries, each library of the plurality of libraries comprising a plurality of reference spectra for use in matching to measured spectra during polishing, each reference spectrum of the plurality of reference spectra having an associated index value, for a first zone of a substrate, receiving user input selecting a first subset of the plurality of libraries, and for a second zone of the substrate, receiving user input selecting a second subset of the plurality of libraries. | 02-02-2012 |
| 20120028461 | METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES - Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening. | 02-02-2012 |
| 20120027954 | MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY - Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed. | 02-02-2012 |
| 20120027918 | SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW - Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages. | 02-02-2012 |
| 20120024479 | APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER - Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume. | 02-02-2012 |
| 20120024340 | Solar Cells With Localized Silicon/Metal Contact For Hot Spot Mitigation and Methods of Manufacture - Embodiments of the invention are directed to photovoltaic cells, modules and methods of making the same. The photovoltaic devices comprise a superstrate, a front contact layer on the superstrate, a photoabsorber layer on the front contact, a patterned discontinuous conductive layer on the photoabsorber layer, a back contact layer in contact with the photoabsorber layer and the patterned discontinuous conductive layer and a reflective layer on the back contact layer. | 02-02-2012 |
| 20120024339 | Photovoltaic Module Including Transparent Sheet With Channel - Photovoltaic modules and methods for making photovoltaic modules are disclosed. In one or more embodiments of the invention, the photovoltaic module includes a transparent sheet with a channel to accommodate a conductive member. | 02-02-2012 |
| 20120024229 | CONTROL OF PLASMA PROFILE USING MAGNETIC NULL ARRANGEMENT BY AUXILIARY MAGNETS - Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber. | 02-02-2012 |
| 20120023728 | Apparatus And Methods For Transporting Large Photovoltaic Modules - Embodiments of the invention are directed to dollies for moving photovoltaic modules comprising an elongate base section with a first plurality of rollers and a support section movably coupled with the elongate base section such that the support section can be moved upwardly and downwardly to raise and lower a photovoltaic module. Kits including at least two dollies and methods of using the dollies and kits are also described. | 02-02-2012 |
| 20120021673 | SUBSTRATE HOLDER TO REDUCE SUBSTRATE EDGE STRESS DURING CHEMICAL MECHANICAL POLISHING - Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include coupling a first substrate to be polished to a dummy substrate, and removing a portion of the backside of the first substrate to reduce the thickness of the first substrate. The first substrate and the dummy substrate are positioned in a carrier head assembly comprising an inflatable membrane and a support ring. The first substrate is placed in contact with a polishing pad to reduce the surface roughness of the backside of the first substrate. The support ring restricts lateral movement of the inflatable membrane to prevent the first substrate from contacting an interior surface of the carrier head assembly. The support ring is sized to allow vertical movement of the inflatable membrane within the carrier head assembly. | 01-26-2012 |
| 20120021671 | REAL-TIME MONITORING OF RETAINING RING THICKNESS AND LIFETIME - A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy. | 01-26-2012 |
| 20120018402 | PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS - The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry. | 01-26-2012 |
| 20120015521 | AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY - Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer. | 01-19-2012 |
| 20120015471 | MULTIPLE-PATH LASER EDGE DELETE PROCESS FOR THIN-FILM SOLAR MODULES - Embodiments of the present invention provide methods for edge film stack removal for use in fabricating photovoltaic devices. In one embodiment, the method includes providing a substrate having a film stack deposited thereon, the film stack comprising a transparent conductive layer, a silicon-containing layer, and a metal back contact layer, removing the metal back contact layer and the silicon-containing layer formed on a periphery region along a side of the substrate using an electromagnetic radiation delivered at a first energy level, and removing the transparent conductive layer formed on the periphery region along the side of the substrate using electromagnetic radiation delivered at a second energy level that is higher than the first energy level. | 01-19-2012 |
| 20120015455 | Method and Apparatus for Calibrating Optical Path Degradation Useful for Decoupled Plasma Nitridation Chambers - Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber. | 01-19-2012 |
| 20120015113 | METHODS FOR FORMING LOW STRESS DIELECTRIC FILMS - A method for forming a multi-layer silicon oxide film on a substrate includes performing a deposition cycle that comprises depositing a silicon oxide layer using a thermal chemical vapor deposition (CVD) process and depositing a silicon oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process. The deposition cycle is repeated a specified number of times to form the multi-layer silicon oxide film comprising a plurality of silicon oxide layers formed using the thermal CVD process and a plurality of silicon oxide layers formed using the PECVD process. Each silicon oxide layer formed using the thermal CVD process is adjacent to at least one silicon oxide layer formed using the PECVD process. | 01-19-2012 |
| 20120012465 | METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES - Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD). | 01-19-2012 |
| 20120012458 | MAGNET ARRANGEMENT FOR A TARGET BACKING TUBE, TARGET BACKING TUBE INCLUDING THE SAME, CYLINDRICAL TARGET ASSEMBLY AND SPUTTERING SYSTEM - The disclosure relates to a magnet arrangement for a sputtering system, wherein the magnet arrangement is adapted for a rotatable target of a sputtering system and includes: a first magnet element extending along a first axis; a second magnet element being disposed around the first magnet element symmetrically to a first plane; wherein the second magnet element includes at least one magnet section intersecting the first plane; and wherein a magnetic axis of the at least one magnet section is inclined with respect to a second plane being orthogonal to the first axis. Further, the disclosure relates to a target backing tube for a rotatable target of a sputtering system, a cylindrical rotatable target for a sputtering system, and a sputtering | 01-19-2012 |
| 20120012172 | THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK - Methods of depositing a TCO layer on a substrate and precursor for solar cells are described. A method of depositing a TCO layer | 01-19-2012 |
| 20120012171 | THIN FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK - Methods for manufacturing a layer stack for a thin-film solar cell and layer stacks are provided. The layer stack includes a transparent substrate having a first refraction index, a transparent conductive oxide layer comprising ZnO, wherein the transparent conductive oxide layer is deposited over the substrate and has a second refraction index, and a further layer, which is deposited between the transparent conductive oxide layer and the substrate, wherein the layer has a third refraction index in a range from the first refraction index to the second refraction index, the layer comprises a metal, and wherein the layer composition has a metal content of 0.5 to 10 weight-%. | 01-19-2012 |
| 20120009847 | CLOSED-LOOP CONTROL OF CMP SLURRY FLOW - Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated. | 01-12-2012 |
| 20120009803 | Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition - A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed. | 01-12-2012 |
| 20120009796 | POST-ASH SIDEWALL HEALING - Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion. | 01-12-2012 |
| 20120009765 | COMPARTMENTALIZED CHAMBER - Embodiments of the present invention generally relate to apparatus for improving processing uniformity and reducing needs of chamber cleaning. Particularly, embodiments of the present invention relate to a processing chamber having a loading compartment and a processing compartment in substantial fluid isolation and methods of depositing films in the processing chamber. | 01-12-2012 |
| 20120009347 | PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID - Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity. | 01-12-2012 |
| 20120006385 | High Performance Multi-Layer Back Contact Stack For Silicon Solar Cells - High performance multi-layer back contact stacks for silicon solar cells and methods for manufacture are disclosed. Photovoltaic modules incorporating high performance multi-layer back contact stacks and methods for making the same are also described. | 01-12-2012 |
| 20120006092 | METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS - Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed. | 01-12-2012 |
| 20120003840 | IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD - Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment. | 01-05-2012 |
| 20120003833 | METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS - Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas. | 01-05-2012 |
| 20120003759 | ENDPOINT CONTROL DURING CHEMICAL MECHANICAL POLISHING BY DETECTING INTERFACE BETWEEN DIFFERENT LAYERS THROUGH SELECTIVITY CHANGE - Embodiments described herein relate to methods of detecting an endpoint for a target substrate during chemical mechanical polishing process. In one embodiment, the method includes polishing one or more target substrates at a first film removal rate to provide reference spectra, polishing one or more target substrates at a second film removal rate to provide current spectra of the one or more target substrates, wherein the second film removal rate is different from the first film removal rate, identifying an interface transition between different layers formed on the one or more target substrates using a sequence of endpoint values obtained based on the reference spectra collected during polishing of the one or more reference substrates, and comparing each current spectrum obtained from current spectra of the one or more target substrates to the reference spectra to obtain the sequence of endpoint values. After identifying the interface transition between different layers formed on the one or more target substrates, the one or more target substrates is optionally overpolished to past a target polishing thickness. | 01-05-2012 |
| 20120003599 | SUBSTRATE SUPPORT FOR USE WITH MULTI-ZONAL HEATING SOURCES - Apparatus for use with multi-zonal heating sources are provided. In some embodiments, a substrate support may have a pocket disposed in a surface of the substrate support and a lip disposed about the pocket to receive an edge of a substrate and to support the substrate over the pocket such that a gap is defined between a pocket surface and a backside surface of the substrate when the substrate is disposed on the lip; a plurality of features to operate in combination with a plurality of heating zones provided by a multi-zonal heating source to provide a desired temperature profile on a frontside surface of a substrate when the substrate is disposed on the lip, and wherein the plurality of features are alternatingly disposed above and below a baseline surface profile of the pocket surface in a radial direction from a central axis of the substrate support. | 01-05-2012 |
| 20120003398 | APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO UV RADIATION USING A REFLECTOR HAVING BOTH ELLIPTICAL AND PARABOLIC REFLECTIVE SECTIONS - Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed. | 01-05-2012 |
| 20120003388 | METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY - A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap. | 01-05-2012 |
| 20120000888 | METHODS AND APPARATUS FOR RADIO FREQUENCY (RF) PLASMA PROCESSING - Methods and apparatus for minimizing reflected radio frequency (RF) energy are provided herein. In some embodiments, an apparatus may include a first RF energy source having frequency tuning to provide a first RF energy, a first matching network coupled to the first RF energy source, one or more sensors to provide first data corresponding to a first magnitude and a first phase of a first impedance of the first RF energy, wherein the first magnitude is equal a first resistance defined as a first voltage divided by a first current and the first phase is equal to a first phase difference between the first voltage and the first current, and a controller adapted to control a first value of a first variable element of the first matching network based upon the first magnitude and to control a first frequency provided by the first RF energy source based upon the first phase. | 01-05-2012 |
| 20120000772 | Deposition Apparatus And Methods To Reduce Deposition Asymmetry - One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder. | 01-05-2012 |
| 20120000511 | METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS USING EPITAXIAL DEPOSITION - Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell. | 01-05-2012 |
| 20120000490 | METHODS FOR ENHANCED PROCESSING CHAMBER CLEANING - Methods and apparatus for cleaning a showerhead and other chamber components used in a chemical vapor deposition process are provided. The methods comprise establishing a thermal gradient in a chamber having a showerhead assembly with deposited material thereon, providing a halogen containing cleaning gas to the chamber, wherein the thermal gradient causes a turbulent or convective flow of the cleaning gas, removing the coating of deposited material from the showerhead assembly by reacting the halogen containing cleaning gas with the deposited material, and exhausting reaction by-products from the chamber. | 01-05-2012 |
| 20120000422 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION - Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel. | 01-05-2012 |
| 20110318997 | APPARATUS AND METHODS FOR CONDITIONING A POLISHING PAD - Apparatus and methods for conditioning a polishing pad include an arm adapted to support a conditioning disk; a drive mechanism coupled to the arm; and a flexible coupling between the drive mechanism and the conditioning disk adapted to allow the conditioning disk to tilt while transmitting rotary motion from the drive mechanism to the conditioning disk. Numerous other aspects are disclosed. | 12-29-2011 |
| 20110318553 | METHOD AND SYSTEM FOR MANUFACTURING A TRANSPARENT BODY FOR USE IN A TOUCH PANEL - A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: depositing a first transparent layer stack over a substrate with a first dielectric film, a second dielectric film, and a third dielectric film. The first and the third dielectric films have a low refractive index and the second dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first dielectric film, the second dielectric film, the third dielectric film, or the transparent conductive film is deposited by sputtering of a rotatable target. Further thereto, a deposition apparatus for manufacturing a transparent body for use in a touch panel and a transparent body for use in a touch panel are provided. | 12-29-2011 |
| 20110315992 | PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF CRYSTALLINE GERMANIUM - In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes. In a subsequent treatment stage, the deposited crystalline germanium layer is treated by exposing the crystalline germanium layer to an energized treatment gas or by annealing the layer. | 12-29-2011 |
| 20110315319 | PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT - Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit. | 12-29-2011 |
| 20110315217 | CU PASTE METALLIZATION FOR SILICON SOLAR CELLS - Embodiments of the invention generally provide copper contact structures on a solar cell formed using copper metallization pastes and/or copper inks. In one embodiment, the copper metallization paste includes an organic matrix, glass frits within the organic matrix, and a metal powder within the organic matrix, the metal powder comprising encapsulated copper-containing particles. The encapsulated copper-containing particles further include a copper-containing particle and at least one coating surrounding the copper-containing particle. In another embodiment, a solar cell includes a front contact structure on a substrate comprising a doped semiconductor material. The front contact structure includes a copper layer comprising sintered encapsulated copper-containing particles, wherein at least some of the encapsulated copper-containing particles include a copper-containing particle and at least one coating surrounding the copper-containing particle. | 12-29-2011 |
| 20110315186 | Method of manufacturing thin crystalline silicon solar cells using recrystallization - Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell. | 12-29-2011 |
| 20110314672 | AUTOMATED SOLAR CELL ELECTRICAL CONNECTION APPARATUS - The present invention generally relates to an automated solar cell electrical connection device that is positioned within an automated solar cell fabrication system. The automated solar cell electrical connection device includes a module and process for automatically attaching a junction box to a composite solar cell structure during the fabrication of a completed solar cell device. The automated solar cell electrical connection module may include a composite solar cell structure conveyor for positioning the composite solar cell structure, an adhesive dispense module for applying adhesive to the junction box, a flux dispenser for applying flux to electrical connection tabs in the junction box, a vision system for locating features on the composite solar cell structure, a robot for positioning the junction box onto the composite solar cell structure, a heating element to make electrical connections between the junction box and the solar cell device, a potting material dispensing assembly for dispensing potting material into the junction box, and a system controller for controlling the functions of the module. | 12-29-2011 |
| 20110312148 | CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON - Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness. | 12-22-2011 |
| 20110311735 | MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION - Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc. | 12-22-2011 |
| 20110308551 | METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS - Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber. | 12-22-2011 |
| 20110308453 | CLOSED LOOP MOCVD DEPOSITION CONTROL - A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems. | 12-22-2011 |
| 20110306216 | MASK HOLDING DEVICE - A holding device adapted for holding a mask and a substrate during processing of the substrate is provided. The holding device includes a mask frame adapted for supporting the mask and a substrate carrier adapted for carrying the substrate to be processed. The substrate carrier has at least one recess adapted for receiving the mask frame which holds the mask. | 12-15-2011 |
| 20110306215 | METHODS OF PROCESSING SUBSTRATES HAVING METAL MATERIALS - Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O | 12-15-2011 |
| 20110306200 | METHODS FOR FORMING INTERCONNECT STRUCTURES - Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material. | 12-15-2011 |
| 20110306186 | METHODS FOR LOW TEMPERATURE CONDITIONING OF PROCESS CHAMBERS - Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber. | 12-15-2011 |
| 20110306169 | CAPPING LAYERS FOR METAL OXYNITRIDE TFTS - A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or oxygen, the threshold voltage, sub threshold slope, and mobility of the TFT may be negatively impacted. By controlling the ratio of the flow rates of the nitrogen, oxygen, and hydrogen containing gases, the performance of the TFT may be optimized. Additionally, the power density, capping layer deposition pressure, and the temperature may also be controlled to optimize the TFT performance. | 12-15-2011 |
| 20110304899 | LAMINATED ELECTRICALLY TINTABLE WINDOWS - A method of manufacturing electrically tintable window glass with a variety of sizes and functionalities is described. The method comprises: (a) providing a large format glass substrate; (b) fabricating a plurality of electrically tintable thin film devices on the large format glass substrate; (c) cutting the large format glass substrate into a plurality of electrically tintable pieces, each electrically tintable piece including one of the plurality of electrically tintable thin film devices; (d) providing a plurality of window glass pieces; (e) matching each one of the plurality of electrically tintable pieces with a corresponding one of the plurality of window glass pieces; and (f) laminating each of the matched electrically tintable pieces and window glass pieces. The lamination may result in the electrically tintable device either being sandwiched between the glass substrate and the window glass piece or on the surface of the laminated pieces. The electrically tintable device is an electrochromic device. | 12-15-2011 |
| 20110304418 | MAGNETIC HOLDING DEVICE AND METHOD FOR HOLDING A SUBSTRATE - A magnetic holding device is adapted for holding a mask during processing of a substrate. The magnetic holding device includes a substrate carrier which is adapted for receiving the substrate to be processed. The substrate carrier includes a permanent magnet adapted for generating a first magnetic field for holding the mask. Furthermore, the substrate carrier includes a solenoid which is adapted for generating a second magnetic field adapted for at least partially compensating the first magnetic field. In case the first magnetic field is compensated, at least partially, by means of the second magnetic field, the mask is released from the substrate carrier. | 12-15-2011 |
| 20110304078 | METHODS FOR REMOVING BYPRODUCTS FROM LOAD LOCK CHAMBERS - Methods for removing process byproducts from a load lock chamber are provided herein. In some embodiments, a method for removing process byproducts from a load lock chamber may include: performing a process on a substrate disposed within a process chamber; transferring the substrate from the process chamber to a load lock chamber; and providing an inert gas to the load lock chamber via at least one gas line while transferring the substrate from the process chamber to the load lock chamber to remove process byproducts from the load lock chamber. | 12-15-2011 |
| 20110303960 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 12-15-2011 |
| 20110303899 | GRAPHENE DEPOSITION - Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is below 600° C. to protect previously deposited layers that may be susceptible to sustained higher temperatures. Graphene deposition can include the deposition of an underlayer (e.g., cobalt) followed by the flow of a carbon precursor (e.g., acetylene) at the processing temperature. Graphene can then be synthesized with during cooling, an RTP cure, and/or a UV cure. | 12-15-2011 |
| 20110303641 | TEMPERATURE CONTROLLED PLASMA PROCESSING CHAMBER COMPONENT WITH ZONE DEPENDENT THERMAL EFFICIENCIES - Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones. | 12-15-2011 |
| 20110303639 | METHODS FOR PROCESSING SUBSTRATES HAVING METAL HARD MASKS - Methods of processing metal hard masks are provided herein. In some embodiments, a method for processing a metal hard mask layer having a tri-layer resist disposed thereon is provided. A pattern is etched from a patterned photoresist layer into a second anti-reflective layer using a first plasma comprising chlorine. The pattern is etched into a first anti-reflective layer using a second plasma formed from a second process gas. The second anti-reflective layer is removed using a third plasma comprising chlorine (Cl | 12-15-2011 |
| 20110303151 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers ( | 12-15-2011 |
| 20110303150 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers ( | 12-15-2011 |
| 20110303149 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers ( | 12-15-2011 |
| 20110300776 | TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION - An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head. | 12-08-2011 |
| 20110300775 | Control of Overpolishing of Multiple Substrates on the Same Platen in Chemical Mechanical Polishing - A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time. | 12-08-2011 |
| 20110300720 | Plasma treatment of substrates prior to deposition - A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen. | 12-08-2011 |
| 20110299961 | PROCESSING SYSTEM AND METHOD OF OPERATING A PROCESSING SYSTEM - A coating system | 12-08-2011 |
| 20110299282 | WINDOW ASSEMBLY FOR USE IN SUBSTRATE PROCESSING SYSTEMS - Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element. | 12-08-2011 |
| 20110298099 | SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS - A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias. | 12-08-2011 |
| 20110298062 | METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF - Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode. | 12-08-2011 |
| 20110297921 | WATER-BARRIER ENCAPSULATION METHOD - The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure. | 12-08-2011 |
| 20110297650 | ASSEMBLY FOR DELIVERING RF POWER AND DC VOLTAGE TO A PLASMA PROCESSING CHAMBER - A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor. | 12-08-2011 |
| 20110297538 | Homing device for magnetron rotating on two arms - A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller. | 12-08-2011 |
| 20110294303 | CONFINED PROCESS VOLUME PECVD CHAMBER - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom. | 12-01-2011 |
| 20110294300 | SELECTIVE ETCH FOR SILICON FILMS - A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen. | 12-01-2011 |
| 20110294293 | CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING - Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer. | 12-01-2011 |
| 20110294258 | METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION - Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for profile modification prior to filling a structure, such as a trench or a via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a structure by exposing the structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer. | 12-01-2011 |
| 20110294234 | THIN FILM SOLAR FABRICATION PROCESS, ETCHING METHOD, DEVICE FOR ETCHING, AND THIN FILM SOLAR DEVICE - Methods and devices for etching a device precursor are provided. For example, a method includes: providing a substrate, determining a temperature associated with the substrate, and etching a metal oxide layer of the substrate, wherein the etching is controlled based on the determined temperature. | 12-01-2011 |
| 20110292373 | THIN FILM MONITORING DEVICE AND METHOD - A method for determining a quality of an etched thin film deposited onto a transparent substrate is provided. The method includes depositing the thin film onto the transparent substrate. Then, the thin film is etched at least at portions of the transparent substrate. At least one transparency level of the transparent substrate having deposited thereon the at least partially etched thin film is measured at least at one wavelength in a wavelength range from 280 nm to 340 nm. Then the quality of the etch process is evaluated on the basis of the at least one measured transparency level. | 12-01-2011 |
| 20110291771 | APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION - Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector. | 12-01-2011 |
| 20110291683 | APPARATUS AND METHOD FOR ELECTROSTATIC DISCHARGE (ESD) REDUCTION - A substrate support unit adapted for a system for testing or processing of a substrate is provided. The substrate support unit includes a support table having at least one substrate carrier structure adapted to support a substrate, wherein the substrate carrier structure is electrically floating with respect to ground. | 12-01-2011 |
| 20110291243 | PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO - Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features. | 12-01-2011 |
