Applied Materials, Inc. A Delaware corporation

Patent application number	Title	Published
Applied Materials, Inc. A Delaware corporation Patent applications
20090104791	Methods for Forming a Silicon Oxide Layer Over a Substrate - A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH	04-23-2009
20080206902	STRESS MEASUREMENTS DURING LARGE-MISMATCH EPITAXIAL PROCESSES - A substrate is disposed within a processing chamber. A nitrogen precursor and a group-III precursor are flowed into the processing chamber. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process at an elevated temperature within the processing chamber using the nitrogen precursor and the group-III precursor. Light beams are directed to a surface of the layer and light spots corresponding to reflections of the light beams are received from the surface at a position-sensitive detector. Positions of the light spots on the position-sensitive detector are determined from photocurrent induced in a photodiode in the position-sensitive detector. A curvature of the layer is determined from the positions of the light spots.	08-28-2008

Patent applications by Applied Materials, Inc. A Delaware corporation