Applied Material, Inc.
|Applied Material, Inc. Patent applications|
|Patent application number||Title||Published|
|20120273343||METHOD FOR COATING A SUBSTRATE AND COATER - A method is provided for coating a substrate (||11-01-2012|
|20120240971||PROCESS FOR FORMING FLEXIBLE SUBSTRATES HAVING PATTERNED CONTACT AREAS - Embodiments of the invention generally include a method of forming a low cost flexible substrate having one or more conductive elements that are used to form a low resistance current carrying path used to interconnect a plurality of solar cell devices disposed in a photovoltaic module. A surface of the one or more conductive elements will generally comprise a plurality of patterned electrical contact regions that are used to form part of the electrical circuit that interconnects the plurality of solar cell devices. The plurality of electrical contact points form an electrical circuit that has a lower series resistance versus conventional designs. Embodiments may also include a method and apparatus that form the electrical contact regions on an inexpensive conductive material before electrically connecting the anode or cathode regions of a formed solar cell to the conductive material.||09-27-2012|
|20120223046||PRINTING METHOD FOR PRINTING ELECTRONIC DEVICES AND RELATIVE CONTROL APPARATUS - Embodiments of the invention may provide a method of printing one or more print tracks on a print support, or substrate, comprising two or more printing steps in each of which a layer of material is deposited on the print support according to a predetermined print profile. In each printing step, subsequent to the first step, each layer of material is deposited at least partially on top of the layer of material printed in the preceding printing step, so that each layer of printed material has an identical or different print profile with respect to at least a layer of material underneath. The method may further comprise depositing material in each printing step that is equivalent to or different from the material deposited in at least one of other the print layers.||09-06-2012|
|20090053882||KRYPTON SPUTTERING OF THIN TUNGSTEN LAYER FOR INTEGRATED CIRCUITS - A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.||02-26-2009|
Patent applications by Applied Material, Inc.