| 20110303283 | SOLAR CELL STRUCTURE OF GROUP III-V SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME - A solar cell structure of Group III-V semiconductor and method of manufacturing the same, comprising: a transparent substrate, an amorphous silicon layer, and at least a Group III-V polycrystalline semiconductor layer. Wherein, said amorphous silicon layer is formed on said transparent substrate through Plasma Enhanced Chemical Vapor Deposition (PECVD), and said Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer sequentially by means of Metal-Organic Chemical Vapor Deposition (MOCVD). In said solar cell structure mentioned above, said transparent substrate replaces a conventional Group III-V substrate, hereby reducing its cost significantly, increasing surface area of said solar cell structure, hence increasing its light absorption area, and raising its photoelectric conversion efficiency. | 12-15-2011 |
