| AMBERWAVE, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120067423 | Flexible Monocrystalline Thin Silicon Cell - A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell. | 03-22-2012 |
| 20110272011 | Solar Cell - A device, system, and method for a thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in may demonstrate higher open circuit voltage are disclosed herein. An exemplary thin silicon solar cell structure has a p+ silicon substrate. A dielectric layer is disposed over the p+ silicon substrate. One or more trenches are defined within the dielectric layer. A thin n type silicon layer is grown on the p+ silicon substrate within the trench by epitaxial lateral overgrowth wherein a junction area of the solar cell is minimized. | 11-10-2011 |
| 20110174376 | Monocrystalline Thin Cell - A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor absorber layer. A conductive bonding layer bonds the absorber layer to a carrier substrate. A porous layer or ion implant may be used to form the donor absorber layer. | 07-21-2011 |
| 20110120538 | SILICON GERMANIUM SOLAR CELL - A device, system, and method for a silicon germanium solar cell structure. An exemplary silicon germanium solar cell structure has a substrate with a graded buffer layer grown on the substrate. An absorber layer is grown on the graded buffer layer and an emitter layer is grown on the absorber layer. A first junction is provided between the emitter layer and the absorber layer. A second junction may be provided between the substrate and the graded buffer layer. | 05-26-2011 |
