| AGFA-GEVAERT Patent applications |
| Patent application number | Title | Published |
|---|
| 20110212545 | Ferroelectric passive memory cell, device and method of manufacture thereof - A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another. | 09-01-2011 |
| 20110200765 | SECURITY LAMINATES FOR SECURITY DOCUMENTS - A security laminate for securing a security document comprising:
| 08-18-2011 |
| 20100320743 | SECURITY LAMINATE HAVING A SECURITY FEATURE - A security laminate comprising a plurality of lamellae and layers, wherein at least one of the lamellae is a biaxially stretched polyethylene terephthalate film, and wherein the ratio of the thickness of the one or more biaxially stretched polyethylene terephthalate films over the total thickness of the security laminate is at least 0.21. A method for detecting the falsification of such security laminates by a sound characteristic is also disclosed. | 12-23-2010 |
| 20100316841 | LAMINATION PROCESS FOR PRODUCING SECURITY LAMINATES - A process for producing a security laminate comprising a plurality of lamellae and layers, comprising the steps of: a) providing at least one film, at least a first and a second prelaminate and a contactless module, wherein the contactless module is not incorporated in the prelaminate or the film; and b) laminating in one step together the at least first prelaminate, the at least one film, the contactless module and the at least second prelaminate to provide the security laminate. | 12-16-2010 |
| 20100093110 | Ferroelectric passive memory cell, device and method of manufacture thereof - A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another. | 04-15-2010 |
| 20090305479 | CONVENTIONALLY PRINTABLE NON-VOLATILE PASSIVE MEMORY ELEMENT AND METHOD OF MAKING THEREOF - A non-volatile passive memory element comprising on a single surface a first electrode system and a second electrode system together with an insulating system, unless the insulating system is the surface, wherein the first electrode system is insulated from the second electrode system, the first and the second electrode systems are pattern systems and at least one conductive or semiconducting bridge is present between the first and second electrode systems, and wherein the non-volatile passive memory device is exclusive of metallic silicon and the systems and the conductive or semiconducting bridges are printable using conventional printing processes with the optional exception of the insulating system if the insulating system is the surface. A non-volatile passive memory device comprising a support and on at least one side of the support the above-mentioned non-volatile passive memory element. A process for providing the above-mentioned non-volatile passive memory device, comprising the realization on a single surface of the support of the steps of: providing a first electrode system pattern, optionally providing an insulating pattern, providing a second electrode system pattern, and providing at least one conductive or semiconducting bridge between the first electrode system pattern and the second electrode system pattern at predesignated points, wherein at least one of the steps is realized with a conventional printing process and two of said steps are optionally performed simultaneously. | 12-10-2009 |
