| Advanced Technology Materials, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120127629 | DOPED ZrO2 CAPACITOR MATERIALS AND STRUCTURES - A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like. | 05-24-2012 |
| 20120115315 | LOW TEMPERATURE GST PROCESS - A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge | 05-10-2012 |
| 20120114836 | TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME - Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack. | 05-10-2012 |
| 20120111374 | ION IMPLANTATION TOOL CLEANING APPARATUS AND METHOD - Apparatus and methods for cleaning ion implanters and/or components thereof are described, utilizing cleaning agents reacted with residue deposits to effect removal thereof. An endpoint detection apparatus and method are also disclosed, which may be integrated in the cleaning apparatus and methods to provide highly efficient utilization of the cleaning agent and avoidance of deleterious effects that otherwise can occur when cleaning agents are continued to be exposed to an implanter or components thereof after cleaning has been completed. | 05-10-2012 |
| 20120108044 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 05-03-2012 |
| 20120108038 | AMORPHOUS GE/TE DEPOSITION PROCESS - Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) | 05-03-2012 |
| 20120064719 | METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES - A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition. | 03-15-2012 |
| 20120058252 | ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS - Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode. | 03-08-2012 |
| 20120042898 | COMPOSITIONS AND METHOD FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION - Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant. | 02-23-2012 |
| 20120028870 | NON-AMINE POST-CMP COMPOSITION AND METHOD OF USE - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 02-02-2012 |
| 20120015857 | LITHOGRAPHIC TOOL IN SITU CLEAN FORMULATIONS - Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus. | 01-19-2012 |
| 20110303558 | GAS STORAGE AND DISPENSING SYSTEM WITH MONOLITHIC CARBON ADSORBENT - A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter<2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, preferably from 0.9 to 2.0 grams per cubic centimeter. | 12-15-2011 |
| 20110284576 | FLUID STORAGE AND DISPENSING VESSELS HAVING COLORIMETRICALLY VERIFIABLE LEAK-TIGHTNESS AND METHOD OF MAKING SAME - A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character, that contains or is otherwise associated with a colorimetric agent undergoing color change in exposure to fluid leaking from the vessel. Such shrink-wrap film may be applied to a portion of the vessel susceptible to leakage, or alternatively to the entire vessel, so that the film is colorimetrically effective to indicate the occurrence of a leakage event by visually perceptible change of color. | 11-24-2011 |
| 20110277846 | RECTANGULAR PARALLELEPIPED FLUID STORAGE AND DISPENSING VESSEL - A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character. | 11-17-2011 |
| 20110275164 | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 11-10-2011 |
| 20110263100 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 10-27-2011 |
| 20110260132 | HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING - A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished. | 10-27-2011 |
| 20110259366 | ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS - Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture. | 10-27-2011 |
| 20110252883 | FLUID STORAGE AND DISPENSING SYSTEM INCLUDING DYNAMIC FLUID MONITORING OF FLUID STORAGE AND DISPENSING VESSEL - A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor and display operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests. | 10-20-2011 |
| 20110232367 | FLUID STORAGE AND DISPENSING SYSTEM INCLUDING DYNAMIC FLUID MONITORING OF FLUID STORAGE AND DISPENSING VESSEL - A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor and display operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel. | 09-29-2011 |
| 20110226874 | FLUID STORAGE AND DISPENSING SYSTEMS, AND FLUID SUPPLY PROCESSES COMPRISING SAME - Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and internal regulator-equipped fluid storage and dispensing vessels. The systems and processes are applicable to a wide variety of end-use applications, including storage and dispensing of hazardous fluids with enhanced safety. In a specific end-use application, reagent gas is dispensed to a semiconductor manufacturing facility from a large-scale, fixedly positioned fluid storage and dispensing vessel containing physical sorbent holding gas at subatmospheric pressure, with such vessel being refillable from a safe gas source of refill gas, as disclosed herein. | 09-22-2011 |
| 20110226806 | FLUID STORAGE AND DISPENSING SYSTEMS AND PROCESSES - Fluid storage and dispensing systems and processes involving various structures methods for fluid storage and dispensing, including, pre-connect verification couplings that are usefully employed with fluid storage and dispensing packages to ensure proper coupling and avoid fluid contamination issues, empty detect systems (e.g., monitoring pressure of dispensed liquid medium to detect pressure droop conditions) useable with fluid storage and dispensing packages incorporating liners that are pressure-compressed in the fluid dispensing operation, ergonomically enhanced structures for facilitating removal of a dispense connector from a capped vessel, cap integrity assurance systems for preventing misuse of vessel caps, and keycoding systems for ensuring coupling of proper dispense assemblies and vessels. Fluid storage and dispensing systems achieve zero or near-zero headspace character, and prevent or ameliorate solubilization effects in liquid dispensing from liners in overpack vessels. | 09-22-2011 |
| 20110220518 | NANOPOROUS ARTICLES AND METHODS OF MAKING SAME - An adsorbent having porosity expanded by contact with a first agent effecting such expansion and a pressurized second agent effecting transport of the first agent into the porosity, wherein the adsorbent subsequent to removal of the first and second agents retains expanded porosity. The adsorbent can be made by an associated method in which materials such as water, ethers, alcohols, organic solvent media, or inorganic solvent media can be utilized as the first agent for swelling of the porosity, and helium, argon, krypton, xenon, neon, or other inert gases can be employed as the pressurized second agent for transport of both agents into the porosity of the adsorbent, subsequent to which the agents can be removed to yield an adsorbent of increased capacity for sorbable fluids, e.g., organometallic compounds, hydrides, halides and acid gases. Also described is a nanoporous carbon composite having porosity that is at least partially filled with material imparting to the composite an enhanced character with respect to characteristics selected from the group consisting of hardness, wear-resistance and toughness, as compared with the nanoporous carbon alone. | 09-15-2011 |
| 20110195188 | CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM - A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates. | 08-11-2011 |
| 20110186086 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 08-04-2011 |
| 20110183528 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si | 07-28-2011 |
| 20110180905 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY - A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material. | 07-28-2011 |
| 20110171382 | SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION - A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C | 07-14-2011 |
| 20110165762 | MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes. | 07-07-2011 |
| 20110159671 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 06-30-2011 |
| 20110140181 | Removal of Masking Material - Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. | 06-16-2011 |
| 20110136343 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups. | 06-09-2011 |
| 20110117751 | NON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USE - Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials. | 05-19-2011 |
| 20110111556 | ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS - Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge | 05-12-2011 |
| 20110097882 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 04-28-2011 |
| 20110097478 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL - A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10 | 04-28-2011 |
| 20110065268 | BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION - Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry. | 03-17-2011 |
| 20110060165 | METAL AMINOTROPONIMINATES, BIS-OXAZOLINATES AND GUANIDINATES - Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes. Such metal compounds are useful in the formation of thin metal films on substrates, e.g., in chemical vapor deposition, atomic layer deposition or rapid vapor deposition processes. The substrates formed have thin film monolayers of the metals provided by the precursors. | 03-10-2011 |
| 20110052482 | METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL - Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer. | 03-03-2011 |
| 20110048063 | COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT - An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region. | 03-03-2011 |
| 20110039747 | COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST - A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s). | 02-17-2011 |
| 20110021011 | CARBON MATERIALS FOR CARBON IMPLANTATION - A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula C | 01-27-2011 |
| 20110006269 | SOLVENT-FREE SYNTHESIS OF SOLUBLE NANOCRYSTALS - Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. | 01-13-2011 |
| 20110001107 | HOLLOW GST STRUCTURE WITH DIELECTRIC FILL - A memory cell structure, including a substrate having a via therein bound at first and second ends thereof by electrodes. The via is coated on side surfaces thereof with GST material defining a core that is hollow or at least partially filled with material, e.g., germanium or dielectric material. One or more of such memory cell structures may be integrated in a phase change memory device. The memory cell structure can be fabricated in a substrate containing a via closed at one end thereof with a bottom electrode, by conformally coating GST material on sidewall surface of the via and surface of the bottom electrode enclosing the via, to form an open core volume bounded by the GST material, optionally at least partially filling the open core volume with germanium or dielectric material, annealing the GST material film, and forming a top electrode at an upper portion of the via. | 01-06-2011 |
| 20100317150 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 12-16-2010 |
| 20100316562 | APPARATUS AND METHOD FOR HYDROGEN GENERATION FROM GASEOUS HYDRIDE - An apparatus and method including storage and dispensing vessels to safely store and dispense gaseous hydrides, where the storage and dispensing vessels contain a solid-phase physical sorbent medium having a physically sorptive affinity for gaseous hydrides, and wherein the gaseous hydride is decomposed in the apparatus to generate hydrogen gas. The gaseous hydrides include, but are not limited to, silane, germane, stibine and diborane. The gaseous hydrides decompose spontaneously and/or decomposition is enhanced using surface modified adsorbents. The hydrogen generated by the apparatus may be used in a fuel cell or other hydrogen gas consuming unit. | 12-16-2010 |
| 20100314590 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 12-16-2010 |
| 20100291299 | STRONTIUM AND BARIUM PRECURSORS FOR USE IN CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION AND RAPID VAPOR DEPOSITION - Cyclopentadienyl and Indenyl barium/strontium metal precursors and Lewis base adducts thereof are described. Such precursors have utility for forming Ba- and/or Sr-containing films on substrates, in the manufacture of microelectronic devices or structures. | 11-18-2010 |
| 20100286014 | LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE - An acidic composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The acidic composition includes surfactant, dispersing agent, sulfonic acid-containing hydrocarbon, and water. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 11-11-2010 |
| 20100285663 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si | 11-11-2010 |
| 20100279011 | NOVEL BISMUTH PRECURSORS FOR CVD/ALD OF THIN FILMS - Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi | 11-04-2010 |
| 20100270508 | ZIRCONIUM PRECURSORS USEFUL IN ATOMIC LAYER DEPOSITION OF ZIRCONIUM-CONTAINING FILMS - Zirconium precursors of the formulae | 10-28-2010 |
| 20100261632 | NON-FLUORIDE CONTAINING COMPOSITION FOR THE REMOVAL OF RESIDUE FROM A MICROELECTRONIC DEVICE - Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 10-14-2010 |
| 20100255198 | SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY - Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation. | 10-07-2010 |
| 20100248480 | CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER AND ASSOCIATED MATERIALS AND METHOD OF USING SAME - A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper. | 09-30-2010 |
| 20100240918 | TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS - Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent. | 09-23-2010 |
| 20100224264 | APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING | 09-09-2010 |
| 20100221914 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups. | 09-02-2010 |
| 20100217415 | PHOTOMETRICALLY MODULATED DELIVERY OF REAGENTS - A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system. | 08-26-2010 |
| 20100215842 | TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME - Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films. | 08-26-2010 |
| 20100213083 | Fluid Storage and Dispensing Systems, and Fluid Supply Processes Comprising Same - Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and internal regulator-equipped fluid storage and dispensing vessels. The systems and processes are applicable to a wide variety of end-use applications, including storage and dispensing of hazardous fluids with enhanced safety. In a specific end-use application, reagent gas is dispensed to a semiconductor manufacturing facility from a large-scale, fixedly positioned fluid storage and dispensing vessel containing physical sorbent holding gas at subatmospheric pressure, with such vessel being refillable from a safe gas source of refill gas, as disclosed herein. | 08-26-2010 |
| 20100209610 | GROUP IV COMPLEXES AS CVD AND ALD PRECURSORS FOR FORMING METAL-CONTAINING THIN FILMS - A metal precursor, selected from among: (i) precursors of the formula (NR | 08-19-2010 |
| 20100209598 | IN SITU GENERATION OF RuO4 FOR ALD OF Ru AND Ru RELATED MATERIALS - Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity. | 08-19-2010 |
| 20100209596 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL - A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10 | 08-19-2010 |
| 20100180955 | GAS DELIVERY SYSTEM WITH INTEGRATED VALVE MANIFOLD FUNCTIONALITY FOR SUB-ATMOSPHERIC AND SUPER-ATMOSPHERIC PRESSURE APPLICATIONS - A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the flow circuitry, with each of the multiple sticks being joined in gas flow communication to a respective gas-utilizing process unit. The flow circuitry is valved to enable sections of the flow circuitry associated with respective ones of the multiple sticks to be isolated from other sections of the flow circuitry, so that process gas can be flowed to one or more of the sticks, while other sticks are being evacuated and purged, or otherwise are closed to dispensed gas flow therethrough. | 07-22-2010 |
| 20100176082 | COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE - Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min | 07-15-2010 |
| 20100164057 | PRECURSORS FOR SILICON DIOXIDE GAP FILL - A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO | 07-01-2010 |
| 20100163788 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon. | 07-01-2010 |
| 20100154835 | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS - A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF | 06-24-2010 |
| 20100152891 | LIQUID HANDLING SYSTEM WITH ELECTRONIC INFORMATION STORAGE - An electronic storage device is coupled with a container capable of holding liquid for electronically storing information relating to the liquid stored in the container. The system can be configured with an antenna, for storing information to and reading information from the electronic storage device. A microprocessor-based controller, coupled with the antenna, may be employed for controlling processing of the liquid based on information read from the electronic storage device by the antenna. A connector of a secure reader system having a reader is provided to physically couple to a container having an information storing mechanism, for periodically reading information from an information storing mechanism. The connector may draw material from the container simultaneous with the reading. | 06-17-2010 |
| 20100139369 | FEEDBACK CONTROL SYSTEM AND METHOD FOR MAINTAINING CONSTANT RESISTANCE OPERATION OF ELECTRICALLY HEATED ELEMENTS - A system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions. | 06-10-2010 |
| 20100133689 | COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS - Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. | 06-03-2010 |
| 20100133292 | LIQUID DISPENSING SYSTEMS ENCOMPASSING GAS REMOVAL - Systems are described for delivery of a wide variety of materials in which liquid and gas or vapor states are concurrently present, from a package preferably including a fluid-containing collapsible liner. Headspace gas is removed from a pressure dispensing package prior to liquid dispensation therefrom, and ingress gas is removed thereafter during dispensation operation. At least one sensor senses presence of gas or a gas-liquid interface in a reservoir or gas-liquid separation region. A gas removal system including an integral reservoir, at least one sensor, and at least one flow control elements may be included within a connector adapted to mate with a pressure dispensing package, for highly efficient removal of gas from the liquid being dispensed from the container. | 06-03-2010 |
| 20100128555 | SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION - Systems and methods for mixing pure feed materials utilizes a first and a second compressible volume, such as defined in first and second liner-based containers adapted for pressure dispensation, wherein such materials are supplied to a mixing apparatus (e.g., reversible-flow or circulatable flow apparatus) adapted to form and maintain a mixture or suspension. Multiple redundant groups of containers may be used to enable mixing of contents of one group while contents of another group are being dispensed, to provide uninterrupted delivery of feed material to a process. Sensors adapted to generate signals indicative of flow, weight/mass, particle size distribution, concentration, and other material properties may be provided. | 05-27-2010 |
| 20100112815 | FLUID STORAGE AND DISPENSING SYSTEMS AND PROCESSES - Fluid storage and dispensing systems and processes involving various devices, structures and arrangements, as well as techniques and methods, for fluid storage and dispensing, including, without limitation, pre-connect verification couplings that are usefully employed in application to fluid storage and dispensing packages, to ensure proper coupling and avoid fluid contamination issues, empty detect systems that are usefully employed for fluid storage and dispensing packages incorporating liners that are pressure-compressed in the fluid dispensing operation, ergonomically enhanced structures for facilitating removal of a dispense connector from a capped vessel, cap integrity assurance systems for preventing misuse of vessel caps, and keycoding systems for ensuring coupling of proper dispense assemblies and vessels. Fluid storage and dispensing systems are described, which achieve zero or near-zero headspace character, and prevent or ameliorate solubilization effects in liquid dispensing from liners in overpack vessels. | 05-06-2010 |
| 20100112795 | METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES - A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant. | 05-06-2010 |
| 20100112728 | METHODS FOR STRIPPING MATERIAL FOR WAFER RECLAMATION - Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. | 05-06-2010 |
| 20100112211 | ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD - Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation. | 05-06-2010 |
| 20100095865 | PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS - Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO | 04-22-2010 |
| 20100087065 | STABILIZATION OF POLYMER-SILICA DISPERSIONS FOR CHEMICAL MECHANICAL POLISHING SLURRY APPLICATIONS - Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a copper removal CMP composition, which is used to selectively remove and planarize copper, into a barrier removal CMP composition, which is used to selectively remove barrier layer material, on a single CMP platen pad. | 04-08-2010 |
| 20100068894 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 03-18-2010 |
| 20100065530 | COMPOSITION AND PROCESS FOR THE SELECTIVE REMOVE OF TiSiN - An aqueous removal composition and process for removing heater material, including TiSiN, from a microelectronic device having said material thereon. The aqueous removal composition includes at least one fluoride source, at least one passivating agent, and at least one oxidizing agent. The composition selectively removes TiSiN relative to oxides and nitrides that are adjacently present. | 03-18-2010 |
| 20100062150 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS - Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) | 03-11-2010 |
| 20100059694 | PRESSURE-BASED GAS DELIVERY SYSTEM AND METHOD FOR REDUCING RISKS ASSOCIATED WITH STORAGE AND DELIVERY OF HIGH PRESSURE GASES - Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes. | 03-11-2010 |
| 20100056410 | COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION - Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant. | 03-04-2010 |
| 20100035785 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE - A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. | 02-11-2010 |
| 20100025430 | PREVENTION OF LINER CHOKE-OFF IN LINER-BASED PRESSURE DISPENSATION SYSTEM - To avoid problems associated with choke-off of a collapsible liner (e.g., disposed within a rigid overpack) during pressure dispensing of fluid therefrom, a pressure dispense package includes a choke prevention element comprising any of a perforated flange within the liner, a channel-defining flange within the liner, a film defining at least one liquid channel along an inner surface of the liner, a radial stiffening element coupled to the liner, an orifice-defining hollow internal support disposed within the liner, one or more magnetic and complementary magnetically responsive elements associated with the liner and surrounding container, or differential collapse characteristics between liner panels. Methods for preventing choke-off of a collapsible liner adapted for pressure dispensing are also provided. | 02-04-2010 |
| 20100018439 | PRECURSORS FOR CVD/ALD OF METAL-CONTAINING FILMS - Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): | 01-28-2010 |
| 20100004772 | SYSTEMS AND METHODS FOR MANAGING MATERIAL STORAGE VESSELS HAVING INFORMATION STORAGE ELEMENTS - Material management systems and methods include material storage vessels with information (e.g., electronic information) storage. Information may be communicated from a storage device to a process tool controller and employed to set or adjust a process tool operating parameter. Material information may be determined by remote analysis and subsequently communicated to an electronic information storage device of a vessel containing such material. Location and movement of material storage vessels within a customer facility may be automatically tracked, with further transfer of material-specific information. Product information may be associatively stored with material-specific information utilized in product manufacture. | 01-07-2010 |
| 20090323466 | SYSTEMS AND DEVICES FOR MIXING SUBSTANCES AND METHODS OF MAKING SAME - A mixing apparatus including a kinetic energy source, a mixing tank, a pivot guide, and transfer shaft is used to drive a mixing paddle through a circular path within a tank without substantial shaft rotation. Sleeved and sleeveless mixing paddles are provided in combination with sealable mixing tanks. A volumetric compensation system responsive to tank wall deflection is used to maintain the internal volume of a mixing tank within predetermined limits. One mixing apparatus includes multiple mixing shafts and paddles coupled to at least one kinetic energy source. Methods for fabricating sleeved paddle-containing mixing apparatuses are further provided. | 12-31-2009 |
| 20090314798 | LINER-BASED LIQUID STORAGE AND DISPENSING SYSTEMS WITH EMPTY DETECTION CAPABILITY - Fluid supply systems for storage and dispensing of chemical reagents and compositions, e.g., high purity liquid reagents and chemical mechanical polishing compositions used to manufacture microelectronic device products, having capability for detection of an empty or near-empty condition when the contained liquid is at or approaching depletion during dispensing operation. Fluid delivery systems employing empty detect arrangements are described, including pressure transducer monitoring of dispensed material intermediate the supply package and a servo-hydraulic dispense pump, or monitoring of dispenser chamber replenishment times in a dispenser being replenished on a cyclic schedule to flow material from the dispenser to a downstream tool utilizing the dispensed material. | 12-24-2009 |
| 20090305458 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 12-10-2009 |
| 20090305427 | APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS - A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF | 12-10-2009 |
| 20090301996 | FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES - A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials. | 12-10-2009 |
| 20090297769 | BARRIER FLUOROPOLYMER FILM-BASED LINERS AND PACKAGING COMPRISING SAME - A container liner comprises at least one sheet bounded along portions thereof to form at least one peripheral seam, with the at least one sheet including a first fluoropolymer layer, a barrier film layer, and a third layer bonded along at least peripheral portions thereof. Any of such layers may be peripherally bonded to form a gap or pocket therebetween, or bonded along substantially entire major surfaces thereof. Surface modification may be employed to facilitate bonding of materials having otherwise dissimilar surface energies. The resulting liner is adapted for storing and dispensing high purity chemical reagents, e.g., by placing the liner in an overpack, and applying pressurizing gas to a space between the liner and the overpack for progressive compaction of the liner to dispense its contents. | 12-03-2009 |
| 20090281344 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si | 11-12-2009 |
| 20090281016 | LOW pH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST - A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s). | 11-12-2009 |
| 20090275164 | BICYCLIC GUANIDINATES AND BRIDGING DIAMIDES AS CVD/ALD PRECURSORS - Precursors for use in depositing metal-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for depositing Ge | 11-05-2009 |
| 20090272272 | SEMICONDUCTOR MANUFACTURING FACILITY UTILIZING EXHAUST RECIRCULATION - A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility. | 11-05-2009 |
| 20090239777 | ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS - An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 09-24-2009 |
| 20090215659 | COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS - An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. | 08-27-2009 |
| 20090215658 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 08-27-2009 |
| 20090215269 | INTEGRATED CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS FOR SINGLE PLATEN PROCESSING - Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad. | 08-27-2009 |
| 20090215225 | TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS - Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD). | 08-27-2009 |
| 20090212071 | MATERIAL STORAGE AND DISPENSING PACKAGES AND METHODS - Packages and methods for storage and dispensing of materials, e.g., high purity liquid reagents and chemical mechanical polishing compositions used in the manufacture of microelectronic device products, including containment structures and methods adapted for pressure-dispensing of high-purity liquids. Liner packaging of liquid or liquid-containing media is described, in which zero or near-zero head space conformations are employed to minimize adverse effects of particle generation, formation of bubbles and degradation of contained material. | 08-27-2009 |
| 20090212021 | COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION - An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate. | 08-27-2009 |
| 20090208637 | COBALT PRECURSORS USEFUL FOR FORMING COBALT-CONTAINING FILMS ON SUBSTRATES - Cobalt precursors for forming metallic cobalt thin films in the manufacture of semiconductor devices, and methods of depositing the cobalt precursors on substrates, e.g., using chemical vapor deposition or atomic layer deposition processes. Packaged cobalt precursor compositions, and microelectronic device manufacturing systems are also described. | 08-20-2009 |
| 20090205964 | ELECTROCHEMICAL SAMPLING HEAD OR ARRAY OF SAME - A sampling head, and/or an array including same for use in electrochemical deposition of various metal(s) on wafers or other substrates suitable for use in microelectronic devices or components thereof. | 08-20-2009 |
| 20090200171 | ELECTROCHEMICAL SENSING AND DATA ANALYSIS SYSTEM, APPARATUS AND METHOD FOR METAL PLATING - An electrochemical sensing and data analysis system (and apparatus and methods) adapted for control of electroplating of various metal(s) on a wafer or other suitable substrate. Components of the system utilize multi-variate analysis (MVA) and galvanostatic, potentiodynamic or other electrical measurements (or combinations thereof) to predict, adjust or control plating parameters, e.g., to achieve improved yield of plated substrates with acceptable levels of defects (or lack thereof). | 08-13-2009 |
| 20090192065 | DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING - A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device. | 07-30-2009 |
| 20090188392 | GAS STORAGE AND DISPENSING SYSTEM WITH MONOLITHIC CARBON ADSORBENT - A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter<2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, preferably from 0.9 to 2.0 grams per cubic centimeter. | 07-30-2009 |
| 20090173225 | RECTANGULAR PARALLELEPIPED FLUID STORAGE AND DISPENSING VESSEL - A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character. | 07-09-2009 |
| 20090162550 | COPPER (I) AMIDINATES AND GUANIDINATES, MIXED LIGAND COPPER COMPLEXES, AND COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION, AND RAPID VAPOR DEPOSITION OF COPPER - Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes. | 06-25-2009 |
| 20090137122 | METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES - A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface. | 05-28-2009 |
| 20090136668 | METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL - Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer. | 05-28-2009 |
| 20090124039 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates. | 05-14-2009 |
| 20090118153 | METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT - A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture. | 05-07-2009 |
| 20090112009 | AMORPHOUS GE/TE DEPOSITION PROCESS - Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) | 04-30-2009 |
| 20090099016 | PRODUCTION OF CARBON NANOTUBES - A method and apparatus for manufacture of carbon nanotubes, in which a substrate is contacted with a hydrocarbonaceous feedstock containing a catalytically effective metal to deposit the feedstock on the substrate, followed by oxidation of the deposited feedstock to remove hydrocarbonaceous and carbonaceous components from the substrate, while retaining the catalytically effective metal thereon, and contacting of the substrate having retained catalytically effective metal thereon with a carbon source material to grow carbon nanotubes on the substrate. The manufacture can be carried out with a petroleum feedstock such as an oil refining atmospheric tower residue, to produce carbon nanotubes in high volume at low cost. Also disclosed is a composite including porous material having single-walled carbon nanotubes in pores thereof. | 04-16-2009 |
| 20090095713 | NOVEL METHODS FOR CLEANING ION IMPLANTER COMPONENTS - A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber. | 04-16-2009 |
| 20090087561 | METAL AND METALLOID SILYLAMIDES, KETIMATES, TETRAALKYLGUANIDINATES AND DIANIONIC GUANIDINATES USEFUL FOR CVD/ALD OF THIN FILMS - Metal and metalloid precursors useful for forming metal-containing films on substrates, including amide precursors, tetraalkylguanidinate precursors, ketimate and dianionic guanidinate precursors. The precursors of the invention are readily formed and conveniently used to carry out chemical vapor deposition or atomic layer deposition at low temperature, e.g., at temperature below 400° C. | 04-02-2009 |
| 20090084288 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups. | 04-02-2009 |
| 20090074965 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS - Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) | 03-19-2009 |
| 20090039266 | MONITORING SYSTEM COMPRISING INFRARED THERMOPILE DETECTOR - The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. In one embodiment, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission. | 02-12-2009 |
| 20090032952 | TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS - Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent. | 02-05-2009 |
| 20090032766 | COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL - A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture. | 02-05-2009 |
| 20090004858 | TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME - Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films. | 01-01-2009 |
| 20080307858 | Apparatus and Process for Leak-Testing and Qualification of Fluid Dispensing Vessels | 12-18-2008 |
| 20080302421 | PERMEABLE GAS ASSEMBLY FOR GAS DELIVERY - A valve assembly for controlling gas delivery from a higher pressure fluid source to a lower pressure processing tool. The valve assembly includes a valve poppet movingly engageable with a valve seating member and a fluid permeable insert positioned between the valve poppet and the valve seating member that is unexposed to flowing fluid when the valve poppet is in a closed position thereby preventing fluid flow through the valve assembly and providing a diffusional path for transfer of all flowing fluid when the valve poppet is in an open position. The permeable insert can be inserted into the sealable and engageable surface of either the valve seat member or the valve poppet. | 12-11-2008 |
| 20080302246 | NANOPOROUS ARTICLES AND METHODS OF MAKING SAME - An adsorbent having porosity expanded by contact with a first agent effecting such expansion and a pressurized second agent effecting transport of the first agent into the porosity, wherein the adsorbent subsequent to removal of the first and second agents retains expanded porosity. The adsorbent can be made by an associated method in which materials such as water, ethers, alcohols, organic solvent media, or inorganic solvent media can be utilized as the first agent for swelling of the porosity, and helium, argon, krypton, xenon, neon, or other inert gases can be employed as the pressurized second agent for transport of both agents into the porosity of the adsorbent, subsequent to which the agents can be removed to yield an adsorbent of increased capacity for sorbable fluids, e.g., organometallic compounds, hydrides, halides and acid gases. Also described is a nanoporous carbon composite having porosity that is at least partially filled with material imparting to the composite an enhanced character with respect to characteristics selected from the group consisting of hardness, wear-resistance and toughness, as compared with the nanoporous carbon alone. | 12-11-2008 |
| 20080289712 | GAS DELIVERY SYSTEM WITH INTEGRATED VALVE MANIFOLD FUNCTIONALITY FOR SUB-ATMOSPHERIC AND SUPER-ATMOSPHERIC PRESSURE APPLICATIONS - A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the flow circuitry, with each of the multiple sticks being joined in gas flow communication to a respective gas-utilizing process unit. The flow circuitry is valved to enable sections of the flow circuitry associated with respective ones of the multiple sticks to be isolated from other sections of the flow circuitry, so that process gas can be flowed to one or more of the sticks, while other sticks are being evacuated and purged, or otherwise are closed to dispensed gas flow therethrough. | 11-27-2008 |
| 20080280380 | Fluid Storage and Dispensing System Including Dynamic Fluid Monitoring of Fluid Storage and Dispensing Vessel - A monitoring system ( | 11-13-2008 |
| 20080271991 | Apparatus and Method for Supercritical Fluid Removal or Deposition Processes - A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components. | 11-06-2008 |
| 20080261847 | Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 10-23-2008 |
| 20080254628 | HIGH THROUGHPUT CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL FILM PLANARIZATION - A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency. | 10-16-2008 |
| 20080251104 | Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes - Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner. | 10-16-2008 |
| 20080248636 | Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, and Formation of Large Boron Hydrides for Implanation - Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry. | 10-09-2008 |
| 20080242574 | Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition - A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture. | 10-02-2008 |
| 20080233276 | COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS - Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. | 09-25-2008 |
| 20080220596 | Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source - A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage. | 09-11-2008 |
| 20080213925 | PHOTOMETRICALLY MODULATED DELIVERY OF REAGENTS - A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system. | 09-04-2008 |
