| ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120127742 | LED MODULE - An LED module includes a substrate comprising a base plate and an elastic arm extending from a periphery side of the base plate. The elastic arm includes a horizontal portion parallel to and spaced from the base plate. A receiving space is defined between the horizontal portion of the elastic arm and the base plate. A circuit layer is formed on the base plate. An LED is mounted on the base plate and electrically connects with the circuit layer. The LED comprises a base and at least one electrode extending outwardly from the base. The LED is fixed on the substrate via the at least one electrode slideably received in the receiving space with a downward force applied on the electrode by the horizontal portion of the elastic arm. | 05-24-2012 |
| 20120126265 | LED PACKAGE - An exemplary LED package includes a substrate, an electric layer formed on the substrate, an LED chip mounted on the substrate and electrically connected with the electric layer, a first fluorescent layer and a second fluorescent layer. The first fluorescent encloses the LED chip and includes first phosphorous compounds. The second fluorescent covers the first fluorescent layer and includes second phosphorous compounds different from the first phosphorous compounds. The second fluorescent layer is detachably mounted at an outside of the first fluorescent layer. | 05-24-2012 |
| 20120126264 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An exemplary light emitting diode (LED) package includes a substrate having a first electrical portion and a second electrical portion formed thereon, two antioxidation layers formed on and electrically connected to the first electrical portion and the second electrical portion, respectively, and an LED chip disposed on the substrate and electrically connected to the two antioxidation layers. | 05-24-2012 |
| 20120122256 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the upper and lower conductive layers into discrete strips; forming a connection layer on an inner circumferential face of each hole to connect the opposite strips of the upper and lower conductive layers; filling a supporting layer in an upper portion of each hole; forming a reinforcing layer on the supporting layer and the upper conductive layer; fixing chips on the reinforcing layer and electrically connecting the chips with the strips of the upper conductive layer; forming an encapsulant on the reinforcing layer; and cutting the base into individual LEDs along the holes. | 05-17-2012 |
| 20120119665 | LIGHTING DEVICE WITH ADJUSTABLE COLOR TEMPERATURE - A lighting device with adjustable color temperature includes a power, a driver, and a plurality of branches. The power is electrically connected to the driver for supplying power to the driver. Each of the branches includes a light source and an adjustor connected in series. The adjustor controls the color temperature of the light source in a corresponding branch by adjusting the voltage through the corresponding branch. | 05-17-2012 |
| 20120119244 | LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation. | 05-17-2012 |
| 20120112223 | LED PACKAGE - An LED package includes a substrate, an LED chip, a transparent thermal insulation layer and an encapsulation including phosphor. The LED chip is arranged on the substrate and electrically connected to the substrate. The transparent thermal insulation layer is located between the LED package and the package layer whereby the phosphor is not affected by a high temperature generated by the LED chip when the LED chip is activated to generate light. | 05-10-2012 |
| 20120107975 | METHOD FOR PACKAGING LIGHT EMITTING DIODE - An LED packaging method includes: providing a mold with two isolated receiving spaces and a substrate with a die supporting portion and an electrode portion respectively received in the two receiving spaces; disposing an LED die on the die supporting portion and electrically connecting the LED die to the electrode portion of the substrate by metal wires; injecting a light wavelength converting material into the first receiving space and covering the LED die with the light wavelength converting material; communicating the first receiving space to the second receiving space, injecting a first light transmissive material into the communicated first and second spaces, and covering the light wavelength converting material and the metal wires with the first light transmissive material; and removing the mold to obtain a packaged LED. | 05-03-2012 |
| 20120104442 | LED AND MANUFACTURING METHOD - An LED includes a substrate, an LED chip setting on the substrate and a reflection cup surrounding the LED chip on the substrate. The LED chip electrically connects with two electrodes setting on the substrate. The reflection cup is filled with an encapsulating material. A fluorescent layer is formed by heating the encapsulating material and deposits on an end of the encapsulation away from the LED chip. The fluorescent layer is used for converting light from the LED chip into a specific wavelength. | 05-03-2012 |
| 20120104438 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - An LED package structure includes a substrate, a first electrical portion and a second electrical portion formed on the substrate, and an LED chip mounted on a first surface of the first electrical portion. The first and second electrical portions are electrically insulated from each other. The LED chip includes a first electrode connected with the first electrical portion and a second electrode connected with the second electrical portion through a connecting wire. The LED chip has a top surface for supporting the second electrode. The connecting wire has a highest point. A distance between the highest point and the top surface is less than a half of a distance between the first surface of the first electrical portion and the top surface of the LED chip. | 05-03-2012 |
| 20120104407 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer is formed on the substrate, the first n-type GaN layer has a first surface facing away from the substrate, and the first surface includes a first area and a second area. The connecting layer, the second n-type GaN layer, the light emitting layer, and the p-type GaN layer are formed on the first area in sequence. The connecting layer is etchable by alkaline solution; a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughened exposed portion; the GaN on the bottom surface of the second n-type GaN layer is N-face GaN. | 05-03-2012 |
| 20120100656 | METHOD FOR MAKING A SOLID STATE SEMICONDUCTOR DEVICE - A method for making a solid state semiconductor device includes: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer; forming a surface-textured second epitaxial layer on the first epitaxial layer by chemical vapor deposition; and forming a solid state stacked layer structure having a PN-junction type light-emitting part on a textured surface of the second epitaxial layer. | 04-26-2012 |
| 20120100648 | METHOD FOR MANUFACTURING LIGHT EMITTING CHIP - A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels. | 04-26-2012 |
| 20120100646 | METHOD FOR DISTRIBUTING PHOSPHOR PARTICULATES ON LED CHIP - A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric field through the adhesive and moving the upper mold to press the adhesive, wherein the phosphor particulates are driven by the electric field to move to a top face of the chip; and curing the adhesive and removing the upper mold and the lower mold. | 04-26-2012 |
| 20120098021 | LED PACKAGE - An LED package includes a substrate, an LED chip and an encapsulation. The substrate includes a main plate, and a first soldering pad and a second soldering pad attached to the main plate. The first soldering pad and the second soldering pad are separated from each other. The LED chip includes a first electrode and a second electrode. The LED chip is mounted on the substrate with the second electrode electrically connected to the second soldering pad of the substrate. The encapsulation includes a main body enclosing the LED chip and an electric connecting unit electrically connecting the first electrode of the LED chip and the first soldering pad. | 04-26-2012 |
| 20120098010 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, a light emitting element, and a package member. The substrate includes a first solder pad and a second solder pad. The light emitting element is mounted on the substrate and includes a p-type electrode and an n-type electrode. The package member is configured for enveloping the light emitting element. A first electrode and a second electrode are formed on the package member. The first electrode and the second electrode of the package member are electrically coupled to the p-type electrode and the n-type electrode of the light emitting element. The first electrode and the second electrode of the package member are electrically coupled to the first solder pad and the second solder pad of the substrate. | 04-26-2012 |
| 20120098007 | LED UNIT HAVING ELECTROCHROMIC ELEMENT - An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a second area around the first area. The first area contains yellow phosphor therein, and the second area contains red phosphor therein. The electrochromic element has an opening through which the first area of the encapsulant is exposed. The second area of the encapsulant is covered by the electrochromic element. The electrochromic element can change its color when being electrified, thereby changing the color temperature of the light output from the LED unit. | 04-26-2012 |
| 20120098005 | LED PACKAGE - An exemplary encapsulation structure for encapsulating an LED chip includes a first encapsulation, a second encapsulation and a transparent resin layer with phosphorous compounds doped therein. The first encapsulation defines a receiving room for receiving the LED chip therein. The second encapsulation defines a receiving space for receiving the first encapsulation therein. The second encapsulation is separated from the first encapsulation to define a clearance between the first encapsulation and the second encapsulation. The transparent resin layer is filled in the clearance. The transparent resin layer has a uniform thickness. | 04-26-2012 |
| 20120098004 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a substrate, an LED die and an encapsulation. The substrate includes a supporting surface and a protrusion extending from the supporting surface along a first direction. The protrusion includes a distal end portion extending along a second direction. The first direction and the second direction define a non-zero angle there between. The LED die is arranged on the supporting surface of the substrate. The encapsulation lies on the supporting surface and covers the LED die and the protrusion to increase a bonding connection between the encapsulation and the substrate. | 04-26-2012 |
| 20120098003 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode (LED) package includes a substrate, an LED chip mounted on the substrate, and a wire. The LED chip includes a semiconductor structure and an electrode disposed on the semiconductor structure. The wire electrically connects the electrode of the LED chip to an electrical portion of the substrate. The wire has a first joint and a second joint connected to the substrate. The wire forms a first curved portion between the electrode and the first joint and a second curved portion between the first joint and the second joint. | 04-26-2012 |
| 20120097976 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region. | 04-26-2012 |
| 20120097969 | LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor layer and the p-type semiconductor layer. A second electrode is electrically connected with the other one of the n-type semiconductor layer and the p-type semiconductor layer. A bonding pad is formed on a top surface of the first electrode. A bonding wire is secured to the bonding pad. A ratio between a contacting area between the bonding pad and the top surface of the first electrode and an area of the top surface of the first electrode is no less than 6:10. | 04-26-2012 |
| 20120094405 | METHOD FOR MANUFACTURING LED PACKAGE - A method for manufacturing an LED package includes following steps: providing a substrate, wherein the substrate includes a plurality of package carriers and each package carrier includes two lead frames. Each package carrier includes a first surface and a recession surrounded by a bottom wall and a sidewall is defined on the first surface. Mount an LED chip on the bottom wall and electrical connecting the LED chip and the two lead frames, form an encapsulation in the recession; form a hydrophobic layer on the package carrier and the encapsulation; cut the substrate into a plurality of LED package structure. | 04-19-2012 |
| 20120094404 | METHOD FOR DISTRIBUTING FLUORESCENCE ONTO LED CHIP - A method for distributing fluorescence onto a light emitting diode chip includes steps: providing a base; mounting the LED chip having a light-emergent face on the base; disposing a baffle sleeve on the base whereby the baffle sleeve surrounds the LED chip; disposing a solid fusible block with the fluorescence mixed therein on the LED chip; heating the solid fusible block to be in a liquid state, and the fusible block flowing over the light-emergent face of the LED chip; and cooling the fusible block to be in a solid state again. | 04-19-2012 |
| 20120092861 | PLANAR LIGHT SOURCE APPARATUS HAVING REFLECTIVE SURFACES - A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements. | 04-19-2012 |
| 20120091487 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package comprises a substrate and a lens. The substrate comprises two electrodes and a LED chip disposed thereon, wherein the LED chip electrically connects to one of the electrodes via a conductive wire. The connection between the conductive wire and the corresponding electrode is covered by an encapsulation. The lens is located on the substrate and covers the encapsulation. Moreover, the substrate comprises at least two tunnels inside the covering of the lens penetrating the substrate. A collector is located between the substrate and the lens, wherein a transparent layer is formed inside the collector by injecting fluid material through the tunnels or directly injecting fluid material into the collector. A method for manufacturing the light emitting diode package is also provided. | 04-19-2012 |
| 20120091485 | LIGHT EMITTING DEVICE - A light emitting diode device comprises a light source and a gas vent device. The gas vent device comprises a base having a collector, wherein a conversion element is located inside the collector. A portion of heat generated from the light source is transferred into thermal energy to gasify the conversion element and the other portion is dissipated via the gas vent device. Therefore, the light emitting device is able to provide illuminant and gasify the conversion element simultaneously. | 04-19-2012 |
| 20120086032 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE HAVING LOW THERMAL STRESS - A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer. | 04-12-2012 |
| 20120086031 | LED PACKAGE, AND MOLD AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package. | 04-12-2012 |
| 20120080715 | SEMICONDUCTOR DEVICE - A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer. | 04-05-2012 |
| 20120080700 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package comprises a substrate, a light emitting diode chip, an encapsulating layer and a transparent surrounding layer. The surrounding layer is disposed on the substrate and encompasses the encapsulating layer, wherein the hardness of the surrounding layer is greater than the encapsulating layer. A method for manufacturing the light emitting diode package is also provided. | 04-05-2012 |
| 20120080696 | LIGHT EMITTING DIODE MODULE - An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of the lighting sources connects with the second lead frame of an adjacent lighting source electrically and mechanically. | 04-05-2012 |
| 20120080691 | LIGHT EMITTING DIODE AND MAKING METHOD THEREOF - An LED includes a substrate, a first P-type semiconductor layer formed on the substrate and a plurality of LED dies arranged on the first P-type semiconductor layer. The LED dies are electrically connected to each other in series. The present invention also relates to a method for making such an LED. | 04-05-2012 |
| 20120077295 | METHOD FOR DICING LED WAFER INTO MULTIPLE LED CHIPS - A method for dicing an LED (light emitting diode) wafer into multiple LED chips includes steps: providing an LED wafer, the LED wafer comprising a substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a transparent, electrically conductive film; forming a first channel in the LED wafer extending downwardly through the transparent, electrically conductive film, the second semiconductor layer and the light-emitting layer to the first semiconductor layer, thereby exposing the first semiconductor layer; forming a second channel within the first channel, the second channel extending downwardly through the first semiconductor layer to the substrate, thereby exposing a top face of the substrate; forming a groove in the top face of the substrate within the second channel by means of laser cutting; and dicing the LED wafer along the groove. | 03-29-2012 |
| 20120077292 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - An exemplary method of manufacturing an LED package includes providing a base, the base having a reflecting cup with a receiving recess defined therein; an LED chip is then mounted on the base and secured in a bottom of the receiving recess; thereafter, a dispensing nozzle is used to apply an encapsulating material into the receiving recess to encapsulate the LED chip; finally, the encapsulating material is baked to form an encapsulating layer. The dispensing nozzle moves relative to the receiving recess during the application of the encapsulating material. A depth of the receiving recess is varied. Parameters of the application of the encapsulating material into the receiving recess by the dispensing nozzle vary in response to a change of the depth of the receiving recess. | 03-29-2012 |
| 20120075882 | LIGHT EMITTING DIODE MODULE - An LED module includes an LED and a light-guiding board. The light-guiding board includes a light-incident face facing the LED, a light-emergent face, a light-reflecting face opposite to the light-emergent face, and a light-converting layer containing phosphors therein. Light emitted from the LED sequentially moves the light-incident face, the light-converting layer and the light-emergent face to leave the light-guiding board. The light-converting layer has a uniform thickness. | 03-29-2012 |
| 20120075858 | LED BULB - An exemplary LED bulb includes a holder, a housing, a heat spreader, a power module and an LED module. The housing connects to the holder. The heat spreader detachably engages with the housing. The power module detachably engages with the housing and is received in the housing. The LED module is arranged on the heat spreader. The LED module electrically connects to the holder via the power module. The LED module is physically separated from the power module. | 03-29-2012 |
| 20120074827 | LED LAMP STRUCTURE - An LED lamp structure includes a heat sink and a base. The heat sink includes a first receiving cavity, a second receiving cavity opposite to the first receiving cavity and a partition. A light board having LED modules is mounted on the partition. The partition defines two first threaded through holes therein. The base has two positioning protrusions engaging in two positioning grooves of the heat sink. Thus, second screw holes of two screw pillars of the base are aligned at the first screw holes of the partition of the heat sink. Screws are used to threadedly engage in the first screw holes, the second screw holes and third screw holes in the light board to thereby assemble the heat sink, the base and the light board together. | 03-29-2012 |
| 20120074531 | EPITAXY SUBSTRATE - An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth areas is less than ⅓ of a thickness H of the protected areas. | 03-29-2012 |
| 20120074452 | LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package includes a base, a light emitting element, a mask, metal wires, an encapsulating layer and a cover layer. The base has a first surface bearing electrical structure thereon and an opposite second surface. The mask is arranged on the first surface to define a space receiving the light emitting element. Two openings are defined in the mask. The light emitting element has two pads exposed to an outside through the two openings respectively. The metal wires electrically connect the pads and the electrical structures. The encapsulating layer is filled in the space and two through holes in the base and encapsulates the light emitting element. The encapsulating layer is separated from the metal wires. The cover layer covers and protects the mask and the metal wires. A method of manufacturing the package is also provided. | 03-29-2012 |
| 20120074444 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The disclosure provides a light emitting device comprising a light source and a reflector, having specular ink, surrounding the light source. | 03-29-2012 |
| 20120074437 | LED UNIT HAVING UNIFORM LIGHT EMISSION - An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The base includes a main body and a pair of steps. The leads each have two opposite ends protruding from two opposite ends of the main body and located below/above a corresponding step. The protruding ends of the leads of adjacent LEDs are connected to each other. The encapsulants of adjacent LEDs are continuously connected together. Light emitted from the chips of the LEDs are evenly distributed in the encapsulants whereby the light from the LEDs forms a rectangular, uniform light source. | 03-29-2012 |
| 20120074436 | LED UNIT HAVING SELF-CONNECTING LEADS - An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The base includes a main body and a pair of steps. The leads each have two opposite ends protruding from two opposite ends of the main body and located below/above a corresponding step. The protruding ends of the leads of each LED are connected to those of adjacent LEDs to electrically connect the LEDs in series or in parallel. | 03-29-2012 |
| 20120068216 | PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected with the electrode layers via two wires. A reflective cup is mounted on the ceramic substrate and defines a receiving space above the top of the ceramic substrate and the first packing layer. A second packing layer is received in the receiving space and covers the first packing layer. | 03-22-2012 |
| 20120061692 | LIGHT EMITTING DIODE PACKAGE HAVING INTERCONNECTION STRUCTURES - A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips. | 03-15-2012 |
| 20120056233 | LED PACKAGE - An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base. | 03-08-2012 |
| 20120043576 | LED PACKAGE STRUCTURE - An LED package structure includes a substrate with a concave groove therein, an LED die received in the concave groove, a heat conductive pillar, two electrically conductive pillars, a heat conductive plate, and two contact pads. The heat conductive pillar extends through the substrate and thermally connects with the LED die and the heat conductive plate. The electrically conductive pillars extend through substrate and electrically connect with the LED die, respectively. The electrically conductive pillars and the heat conductive pillar are spaced from each other. The contact pads respectively and electrically connect with the electrically conductive pillars. The contact pads are spaced from each other. | 02-23-2012 |
| 20120043523 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode. | 02-23-2012 |
| 20120037947 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode package comprises a substrate with a first surface and a second surface opposite to each other, a circuit on the substrate, a support on the substrate for reinforcing strength of the substrate, a plurality of light emitting diodes on the substrate and electrically connected to the circuit, and a cover layer on the plurality of light emitting diodes. A method for manufacturing a light-emitting diode package is further provided. | 02-16-2012 |
| 20120034716 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing a light emitting diode includes steps: providing a base having leads formed thereon; fixing a light emitting die on the leads; disposing a glass encapsulant on the base; co-firing the encapsulant with the base to fix them together. The base is made of silicon or ceramic. The encapsulant has a cover covering the light emitting die received in a groove of the base and a positioning plate fittingly engaging into the groove in one embodiment. The encapsulant has a cavity receiving the light emitting die to cover the light emitting die fixed on a top face of the base in another embodiment. Various mechanisms are used to protect the light emitting die during co-firing of the encapsulant and the base. | 02-09-2012 |
| 20120032192 | LIGHT EMITTING DIODE - A light emitting diode includes a first illumination region, a second illumination region, and the third illumination, wherein a first fluorescent conversion layer and a second fluorescent conversion layer cover the first illumination region and the second illumination region, respectively. The fluorescent conversion layers can convert lights from the illumination regions to other lights with different wavelengths whereby the light emitting diode generates light with multiple wavelengths. | 02-09-2012 |
| 20120025258 | LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE - An exemplary LED module includes a board and an LED package mounted on the plate. The LED package includes a base, an LED chip mounted on a top surface of the base, two electrodes formed on the base and electrically connected to the LED chip and the board, and an encapsulant encapsulating the LED chip. A plurality of grooves are defined in the bottom surface of the base. When the LED package is secured on the plate via solder paste, the grooves function as a container for receiving excessive solder paste, thereby preventing the solder paste from spilling and floating or inclination of the LED package. | 02-02-2012 |
| 20120025243 | LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip. | 02-02-2012 |
| 20120025240 | PACKAGE OF LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a package of light emitting device includes the following steps: providing a light emitting element and positioning the light emitting element at a bottom of a reflecting cup; providing phosphors and a compound of epoxy resin and silicone, and mixing the phosphors and the compound of epoxy resin and silicone to obtain a mixture by a process of kneading; and encapsulating the light emitting element with the mixture to form an encapsulant received in the reflecting cup. | 02-02-2012 |
| 20120025238 | LED PACKAGE - An LED package comprises a substrate, an LED die, and an encapsulating layer. The substrate has circuit formed thereon. The LED die is arranged on the substrate and electrically connected to the circuit of the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer and the substrate are made of cycloaliphatic epoxide. | 02-02-2012 |
| 20120025215 | SEMICONDUCTOR PACKAGE WITH HEAT DISSIPATING STRUCTURE - A semiconductor package includes a substrate, a number of electrodes formed in the substrate, a heat dissipating member fixed on the substrate, and at least one semiconductor chip mounted on the heat dissipating member and electrically connected to the electrodes. The heat dissipating member defines a receiving through hole and includes a conducting portion formed at the bottom of the receiving through hole. The at least one semiconductor chip is mounted on the conducting portion. The conducting portion efficiently conducts the heat generated by the semiconductor chip to the heat dissipating member and improves the heat dissipating efficiency of the semiconductor package. | 02-02-2012 |
| 20120021545 | METHOD OF MANUFACTURING VERTICAL LIGHT EMITTING DIODE - A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the first substrate; depositing an epitaxial layer on the lapping stop layer; bonding a second substrate on the epitaxial layer; and removing the first substrate from the lapping stop layer. | 01-26-2012 |
| 20120021542 | METHOD OF PACKAGING LIGHT EMITTING DEVICE - A method of packaging a light emitting device includes the following steps: providing a base; forming a mask on the base, the mask defining a plurality of holes therein; positioning a certain amount of glue in each of the holes; securing a film on the mask, a plurality of light emitting elements being positioned on the film, and each of the light emitting elements being positioned in a corresponding hole and adhered by the glue in the corresponding hole; separating the light emitting elements from the film and removing the film from the mask; and removing the mask from the base. | 01-26-2012 |
| 20120021541 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flipchip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process. | 01-26-2012 |
| 20120020089 | LIGHT EMITTING DIODE LIGHT BAR - An LED light bar includes an elongated circuit board, a first lighting module formed in the middle of the circuit board and two second light modules formed at two opposite ends of the circuit board. Each of first lighting module and the two second lighting module includes a plurality of LEDs arranged linearly on a surface of the circuit board. A density of the LEDs in the first lighting module is smaller than that in the second lighting modules. | 01-26-2012 |
| 20120018847 | GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. | 01-26-2012 |
| 20120012873 | LIGHT EMITTING DIODE PACKAGE FOR MICROMINIATURIZATION - A light emitting diode package includes a metal thin film with a first surface and a second surface opposite to the first surface. The metal thin film further defines a first part and a second part electrically insulated from the first part. A light emitting diode die is formed on the first part of the metal thin film. The light emitting diode die includes a first electrode and a second electrode. The light emitting diode die is sealed within a glass encapsulation and the second surface of the metal thin film is exposed to the outside of the glass encapsulation for electrically connecting with an external power. | 01-19-2012 |
| 20120012872 | LED PACKAGE STRUCTURE - An LED package structure includes a transparent substrate having a supporting face and a light-emergent face opposite to the supporting face, a housing disposed on the supporting face, two electrodes disposed on the housing, an LED chip disposed on the supporting face and electrically connected to the two electrodes, a reflecting layer covering the LED chip to reflect light emitted by the LED chip toward the transparent substrate, and a phosphor layer formed on the light-emergent face of the substrate. The phosphor layer includes a plurality of layers each having a specific light wavelength conversion range to generate a light with a predetermined color. | 01-19-2012 |
| 20120001303 | SEMICONDUCTOR STRUCTURE HAVING LOW THERMAL STRESS AND METHOD FOR MANUFACTURING THEREOF - A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed. | 01-05-2012 |
| 20110316024 | LED PACKAGE - An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer. | 12-29-2011 |
| 20110297981 | FLUORESCENT STRUCTURE AND METHOD FOR FORMING THE FLUORESCENT STRUCTURE AND LED PACKAGE USING THE SAME - A fluorescent structure for a light-emitting package includes a first fluorescent layer and a second fluorescent layer covering the first fluorescent layer. The first fluorescent layer includes first fluorescent strips, and defines first transparent regions between the first fluorescent strips. The second fluorescent layer includes second fluorescent strips, and defines second transparent regions between the second fluorescent strips. A method for forming the fluorescent structure and a light-emitting diode package using the fluorescent structure are also provided. | 12-08-2011 |
| 20110291138 | LIGHT-EMITTING ELEMENT PACKAGE AND FABRICATION METHOD THEREOF - A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of photonic crystals. | 12-01-2011 |
| 20110291136 | LIGHT-EMITTING ELEMENT AND FABRICATION METHOD THEREOF - A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough. | 12-01-2011 |
| 20110291135 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a silicon substrate having a first surface and a second surface opposite to the first surface, wherein the first surface includes a cavity, a light emitting diode chip fixed on a bottom of the cavity, and a glass lens secured to the silicon substrate and covering the light emitting diode chip. | 12-01-2011 |
| 20110291121 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate. | 12-01-2011 |
| 20110278631 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) chip includes a first electrode and a second electrode. Each of the first and second electrodes includes several trunks with at least one branch extending from at least one of the trunk, and at least one conductive pad serially connecting the trunks. A distance between a distal end of the branch of the first electrode and the conductive pad of the second electrode is less than that between any of other portions of the branch of the first electrode and the conductive pad of the second electrode, to thereby avoid crowded electric current formed at the first electrode and the conductive pad of the second electrode to save power accordingly. | 11-17-2011 |
| 20110278613 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, a buffer layer on the substrate, a patterned layer having a first reflective index on the buffer layer, a semiconductor layer having a second reflective index on the patterned layer, and an illumination structure on the semiconductor layer. A method for manufacturing the light emitting diode is also provided. | 11-17-2011 |
| 20110278601 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a silicon base, an LED and a glass encapsulant. The silicon base has a first surface and a second surface opposite to the first surface. The LED chip is located on the first surface of the silicon base. The glass encapsulant covers the LED chip. The glass encapsulant and the silicon base define a receiving space therebetween to receive the LED chip. The glass encapsulant is fixedly engaged with the first surface of the silicon base, so the glass encapsulant and the silicon base enclose the LED chip. | 11-17-2011 |
| 20110272666 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure. | 11-10-2011 |
| 20110266586 | LED PACKAGE AND MANUFACTURING METHOD THEREOF - An LED package includes a base, an LED chip, and an encapsulant. The LED chip is mounted on the base, and is enclosed by the encapsulant. The base includes a substrate and a blocking wall integrally formed with the substrate. The blocking wall divides a surface of the substrate into a first bonding area and a second bonding area. An electrically conductive layer and a solder are formed on the bonding area in sequence. The blocking wall can block the first and second solder to overflow outside the first and second bonding area at soldering respectively. A method for manufacturing the LED package is also provided. | 11-03-2011 |
| 20110266574 | LED PACKAGE - An LED package includes a substrate, an LED die, and an encapsulating layer. The LED die is arranged on the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer includes a light dispersing element. A light scattering intensity of the light dispersing element is proportional to the light intensity of light generated by the LED die and illuminated at the encapsulating layer. A luminance at a center of the LED package is substantially identical to that at a circumference of the LED package. | 11-03-2011 |
| 20110266570 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - In a light emitting device package and manufacturing method thereof, a multi-layer structure is allocated upon a substrate, of which at least two films with different refractive indices are alternately stacked together. | 11-03-2011 |
| 20110266552 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween. | 11-03-2011 |
| 20110261562 | TRAFFIC LIGHT - A traffic light assembly includes at least one light module, at least one lens located in front of the at least one light module, a transparent housing located in front of the at least one lens, and a cleaning device. The cleaning device includes a wiper located on an outer surface of the transparent housing, and a driver which drives the wiper to brush the transparent housing. | 10-27-2011 |
| 20110256646 | METHOD FOR MANUFACTURING LED PACKAGE AND SUBSTRATE THEREOF - In a method for manufacturing a LED package, a substrate of the LED package is formed by thermally pressing at least one insulating plate over an electrode plate and then grinding the insulating plates to expose the electrode plate. | 10-20-2011 |
| 20110256643 | METHOD FOR DETACHING LAYERS WITH LOW MAGNETIC PERMEABILITY - A method for detaching a first material layer from a second material layer includes following steps: forming a high-magnetic-permeability material layer on a first material layer comprised of low-magnetic-permeability material; removing a portion of the high-magnetic-permeability material layer to expose a portion of the first material layer; epitaxially growing a second material layer comprised of low-magnetic-permeability material on the exposed portion of the first material layer and the high-magnetic-permeability material layer; cooling the first and second material layers; heating the high-magnetic-permeability material layer, thus detaching the first material layer from the second material layer. | 10-20-2011 |
| 20110233564 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED chip includes a transparent substrate and a number of lighting structure units each including a p-type semiconductor and an n-type semiconductor and a recess extending from the p-type semiconductor to the n-type semiconductor. The recess is filled with metal material which covers the surface of the lighting structure units. By filling the recess with metal material, the heat generated by the lighting structure units can rapidly transfer to the metal material. A method for manufacturing the light emitting diode chip is also provided. | 09-29-2011 |
| 20110215365 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a package substrate, at least one light emitting element, a first encapsulation layer and a second encapsulation layer. The at least one light emitting element is mounted on the package substrate. The first encapsulation layer is mounted on the package substrate for encapsulation the at least one light emitting element. The second encapsulation layer is configured for encapsulation a back side of the at least one light emitting element. | 09-08-2011 |
| 20110210356 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a substrate, a reflection layer, at least one light emitting element, at least two conductive layers, a plurality of metal pins and an encapsulation layer. The reflection layer is formed on the substrate. The at least one light emitting element is mounted on the reflection layer on the substrate. The at least two conductive layers are electrically coupled to the at least one light emitting element. The metal pins electrically couple to the at least two conductive layers. The encapsulation layer is mounted on the substrate for encapsulating the at least one light emitting element. | 09-01-2011 |
| 20110210312 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 09-01-2011 |
| 20110206079 | SIDE EMITTING SEMICONDUCTOR PACKAGE - A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides. | 08-25-2011 |
| 20110193110 | LIGHT EMITTING DIODE ILLUMINATING APPARATUS WITH SAME-TYPE LIGHT EMITTING DIODES - A light emitting diode illuminating apparatus includes a substrate, a first lighting element and a second lighting element. The first and second lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating the first LED chip. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The second filling layer includes two different phosphor materials respectively doped therein. The first LED chip and the second LED chip are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitted from the first filling layer and the second filling layer is capable of mixing to produce light of a uniform color. | 08-11-2011 |
| 20110186975 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a substrate with a first surface and an opposite second surface, a plurality of metal rods throughout the first surface and the second surface of the substrate, a reflector surrounding the first surface of the substrate to form a functional area, a glass reflection layer covering the surfaces of reflector and the functional area and exposing a part of a first electrode area and a part of a second electrode area, at least one semiconductor chip adhered on the functional area, and a transparent gel covering the at least one semiconductor chip. | 08-04-2011 |
| 20110186891 | SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2. | 08-04-2011 |
| 20110186888 | SEMICONDUCTOR LIGHTING MODULE PACKAGE - A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors. | 08-04-2011 |
| 20110186856 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting element includes providing a substrate, forming a buffer layer on the substrate, forming a GaN layer on the buffer layer, forming a rough layer on the GaN layer at low temperature, and forming an epitaxial layer on the rough layer, wherein a refraction index of the epitaxial layer exceeds a refraction index of the rough layer. Thus, most light scatters at the rough layer, and then emits upwardly to a light emitting surface, enhancing light extraction efficiency thereof. An epitaxial process of the method is processed in situ in an MOCVD reactor. | 08-04-2011 |
| 20110181182 | TOP VIEW LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF - A top view light emitting device package and fabrication method thereof include a bilateral circuit is provided for emitting two far light fields with no requirement for multiple devices. Moreover, the top view light emitting device package of the disclosure also provides depressions and reflectors formed on the surfaces of the silicon substrate to enhance the reflective efficiency and fix a specific light field. | 07-28-2011 |
| 20110169034 | PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure includes a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and an opposite second surface. The first surface has a reflective opening, and the second surface has two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recess. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the second insulating layer. The second conductive layer is disposed on the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer. | 07-14-2011 |
| 20110163295 | SEMICONDUCTOR WITH LOW DISLOCATION - A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer. | 07-07-2011 |
| 20110156085 | SEMICONDUCTOR PACKAGE - A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire electrically connects the chip to the lead frames. An encapsulation covers the lead frames, the heat dissipation plate, the semiconductor chip, and the conductive wires, while the bottom surface of the heat dissipation plate and the extending portions of the lead frames are exposed. | 06-30-2011 |
| 20110114983 | PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR - A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer. | 05-19-2011 |
| 20110108871 | EDGE LED PACKAGE - An edge LED package includes a base, an LED die and a reflective cup. The LED die is located on a surface of the base. The reflective cup includes an inner sidewall surrounding the LED die. The inner sidewall inclines outward from the base to form an included angle from 140 to 150°. The depth of the reflective cup, measured vertically from top of the reflective cup to the bottom, is about 0.25 mm to 0.3 mm. The area ratio between the opening area of the reflective cup and the base area surrounded by the reflective cup is about 1.5 to 2. | 05-12-2011 |
| 20110101408 | LED DIE HAVING HEAT DISSIPATION LAYERS - An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode. | 05-05-2011 |
| 20110095316 | LED PACKAGE STRUCTURE - An LED package structure includes an LED die, a lead frame and a housing connecting to the lead frame. The LED die is located on a surface of the lead frame. The housing includes an inner face surrounding the LED die. The inner face has a bottom edge connected to the surface of the lead frame, a top edge and a waist line between the bottom edge and top edge. The bottom edge surrounds an area less than an area surrounded by the waist line. The area surrounded by the waist line is less than an area surrounded by the top edge. The inner face has a curved surface between the waist line and the bottom edge. | 04-28-2011 |
| 20110089464 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die. | 04-21-2011 |
| 20110073872 | HIGH BRIGHTNESS LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A high brightness light emitting diode includes a carrier substrate and an epitaxial multi-layer formed thereon. The carrier substrate includes a metal material and a medium, and a coefficient of thermal expansion (CTE) of the medium is less than a CTE of the metal material. | 03-31-2011 |
| 20110068358 | PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A method for fabricating a photoelectric device initially provides a ceramic substrate comprising a thermal dissipation layer on a bottom layer of the ceramic substrate, an electrode layer on the top surface of the ceramic substrate, and a reflective structure in cavities of the ceramic substrate. Next, a plurality of photoelectric dies is disposed on the top surface of the ceramic substrate. Then, a first packaging layer is formed on the top surfaces of the photoelectric dies. Next, the ceramic substrate is placed between an upper mold and a lower mold. Finally, a plurality of lenses is formed on the top surface of the first packaging layer by using an injection molding technique or a transfer molding technique. | 03-24-2011 |
| 20110062871 | AC-LED PROTECTION CIRCUIT - An AC-LED protection circuit comprises an AC-LED with a first terminal and a second terminal, and a circuit protection unit electrically connects with the first and second terminals of the AC-LED. When a voltage between two terminals of the circuit protection unit exceeds a voltage threshold, the circuit protection unit substantially forms a short circuit. Also, when a current through the circuit protection units exceeds a current threshold, the circuit protection unit forms a substantial open circuit. | 03-17-2011 |
| 20110062474 | LIGHT-EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF - A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the light-emitting diode die, and configured to direct light from the light-emitting die in a predetermined direction. The lens is directly molded within the reflector, covering the fluorescent layer. | 03-17-2011 |
| 20110045609 | METHOD FOR DETACHING LAYERS WITH LOW MAGNETIC PERMEABILITY - A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer. | 02-24-2011 |
| 20110031513 | WATERPROOF SMD LED MODULE AND METHOD OF MANUFACTURING THE SAME - A surface-mount device (SMD) light emitting diode (LED) module includes a leadframe, an LED chip, a waterproof protective film and a sealing material. The leadframe includes a plurality of leads and the LED chip is fixed on one of the leads. The waterproof protective film covers the LED chip and a portion of the leadframe, and exposes a portion of the leadframe for connecting to a circuit board. The sealing material is also formed on the leadframe to cover the LED chip. In addition, a method of manufacturing the SMD LED module is provided. | 02-10-2011 |
| 20110012155 | Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof - A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure. | 01-20-2011 |
| 20100304535 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film. | 12-02-2010 |
| 20100295084 | Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 11-25-2010 |
| 20100271845 | SIDE LIGHT TYPE BACKLIGHT MODULE WITH BACK PLATE ASSEMBLY - A back plate assembly utilized in a side light type backlight module includes two cases each including a main plate, a side plate extending upwardly extending from an end of the main plate and a pressing plate inwardly extending from a free end of the side plate. An opposite end of the main plate of one of the cases has a first stepped portion extending inwardly from a top portion thereof, and an opposite end of the main plate of the other one of the cases has a second stepped portion extending inwardly from a bottom portion thereof. A plurality of bolts extend through the second and first stepped portions and secure the cases together. A space is defined between the first and second cases for receiving a light guiding plate and a reflection plate between the main plates and the light guiding plate. | 10-28-2010 |
| 20100271807 | BACKLIGHT MODULE - An exemplary illuminating apparatus includes a light guiding plate, a light source facing a light input surface of the light guiding plate, and a complementary color element adjacent to the light source. The light source comprises a number of LEDs which emit light with at least two wavelengths. The at least two wavelengths light mix with each other to gain a white light. The complementary color element is configured for receiving light emitted from adjacent, outmost LED and converting the light into white light. The white light is reflected by the complementary color element and emits from the light guiding plate through the light output surface. | 10-28-2010 |
| 20100261300 | METHOD FOR SEPARATING SUBSTRATE FROM SEMICONDUCTOR LAYER - A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes. | 10-14-2010 |
| 20100252842 | PACKAGE STRUCTURE OF LIGHT EMITTING DIODE FOR BACKLIGHT - A package structure of a light emitting diode for a backlight comprises a long-wavelength LED die and a short-wavelength LED die. The lights emitted from the two LED dies are mixed with the light emitted from excited fluorescent powders for serving as the backlight of a liquid crystal display. A partition plate is disposed between the two LED dies for separating them from each other. The effective light output of the package structure is increased because each of the two LED dies cannot absorb the light from the other. | 10-07-2010 |
| 20100238684 | BACKLIGHT MODULE - A backlight module includes a plurality of first light sources emitting first light and a light guide plate. The first light sources are arranged in a line and spaced from each other. Two adjacent first light sources define a first space therebetween. The light guide plate includes a first light incident surface and a light output surface. The first light incident surface has a plurality of bright areas respectively corresponding to the first light sources and a plurality of dark areas respectively corresponding to the first spaces. A plurality of first reflectors is disposed on the plurality of dark areas of the first incident surface. The light output surface is adjacent and perpendicular to the light incident surface. | 09-23-2010 |
| 20100232179 | PRINTED CIRCUIT BOARD AND BACK LIGHT MODULE USING THE SAME - A back light module includes a printed circuit board and a plurality of surface mounting elements mounted on the printed circuit board. Each surface mounting element is an LED lighting element. The printed circuit board has a plurality of pads. Each of the pads includes a first bar and two second bars extending respectively from two ends of the first bar. The surface mounting element includes a plurality of pins. The pins are placed on two sides of the surface mounting element. The pins are soldered on the pads. | 09-16-2010 |
| 20100230711 | FLIP-CHIP SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology. | 09-16-2010 |
| 20100225846 | BACKLIGHT MODULE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - An exemplary liquid crystal display device includes a backlight module, a metallic bracket and a liquid crystal panel. The backlight module includes a back bezel, a planar lighting source mounted on the back bezel and a frame. The frame includes a metallic beam and three plastic beams. The metallic beam and the plastic beams enclose the back bezel. The metallic beam is located at a top of the liquid crystal display device. The metallic bracket supports the backlight module and thermally connects with the metallic beam of the frame of the backlight module. The liquid crystal panel is located at a surface of emission of the planar lighting source. | 09-09-2010 |
| 20100224900 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area. | 09-09-2010 |
| 20100224897 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention. | 09-09-2010 |
| 20100224858 | LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF - A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved. | 09-09-2010 |
| 20100213487 | SIDE-EMITTING LED PACKAGE AND MANUFACTURING METHOD OF THE SAME - A side-emitting LED includes a substrate formed with a plurality of electrodes, an LED chip bonded onto the substrate and electrically connected to the electrodes, a transparent member encapsulating the LED chip and a casing fixed on the substrate. The transparent member has a flat bottom surface attached to the substrate, a vertically surface extending perpendicularly from a straight side edge of the flat bottom surface and a curved surface connected to curved edges of the flat bottom and vertical surfaces. The casing encapsulates the transparent member excepting the vertical surface of the transparent member. The curved surface of the transparent member is shaped as a part of an outer surface of an ellipsoid. | 08-26-2010 |
| 20100170936 | METHOD FOR BONDING TWO MATERIALS - A method for bonding two materials uses radio frequency energy to swiftly induce heat in a high permeability material for heating a medium to the bonding temperature of the medium so as to bond the two materials with each other. | 07-08-2010 |
| 20100110679 | LIGHT EMITTING DIODE LIGHT MODULE AND OPTICAL ENGINE THEREOF - An optical engine of a light emitting diode (LED) light module comprises a heat dissipation device, an LED light bar and an optical component. The heat dissipation device comprises a base plate and a plurality of fin plates vertically welded onto a surface of the base plate. The LED light bar is disposed on an opposite surface of the base plate so that the LED light bar can dissipate heat through the fin plates. The optical component having a space for accommodating the LED light is provided to form a desired light distribution pattern. | 05-06-2010 |
| 20100103658 | PLANAR LIGHT SOURCE APPARATUS - An exemplary planar light source apparatus includes a number of lighting elements and a number of mirror reflectors. The lighting elements are arranged on a same plane and facing a same direction. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the plane. | 04-29-2010 |
| 20100103091 | LIGHT EMITTING DIODE ARRAY, DRIVING SYSTEM THEREOF AND LIQUID CRYSTAL DISPLAY USING THE SAME - A light emitting diode array for a liquid crystal display comprises a plurality of first light emitting diodes that are driven by pulse-width modulated signals and a plurality of second light emitting diodes that are driven by constant direct current. The plurality of first light emitting diodes and the plurality of second light emitting diodes are arranged in an alternating manner for adjustment of the uniform illumination of a liquid crystal display. | 04-29-2010 |
| 20100099213 | METHOD FOR BLOCKING DISLOCATION PROPAGATION OF SEMICONDUCTOR - The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects. | 04-22-2010 |
| 20100096746 | PACKAGE MODULE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICES AND FABRICATING METHOD THEREOF - A compound semiconductor device package module structure includes a heat dissipation film, a dielectric layer, a plurality of compound semiconductor dies, means for mounting the compound semiconductor dies on the heat dissipation film, and a transparent encapsulation material. The dielectric layer includes a plurality of openings formed on the heat dissipation film. The compound semiconductor dies are placed on the heat dissipation film in the openings, and adjacent two compound semiconductor dies are separated by the dielectric layer. The transparent encapsulation material covers the compound semiconductor dies. | 04-22-2010 |
| 20100096616 | LIGHT-EMITTING AND LIGHT-DETECTING OPTOELECTRONIC DEVICE - An exemplary optoelectronic device includes a substrate and an epitaxial structure formed on the optoelectronic device. The epitaxial structure includes an N-type semiconductor layer, a P-type semiconductor layer, a multi-quantum-well layer and an undoped semiconductor layer. The multi-quantum-well layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer. The undoped semiconductor layer is sandwiched between the N-type semiconductor layer and the multi-quantum-well layer. The undoped semiconductor layer is represented by a general formula Al | 04-22-2010 |
| 20100090935 | METHOD AND SYSTEM FOR CONFIGURING HIGH CRI LED - A system and method for configuring LED BLU with high NTSC is provided in this invention by using algorithm to compute concentration of multiple phosphors. After the mixed with the LED, an LED BLU with high NTSC can be provided. | 04-15-2010 |
| 20100090239 | CERAMIC PACKAGE STRUCTURE OF HIGH POWER LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A ceramic package structure of a high power light emitting diode comprises a light emitting diode die, a ceramic substrate, at least two conductive rods, and an electrical conductive film. The ceramic substrate comprises a first surface and a second surface opposite the first surface. A reflecting cup is disposed on the first surface. At least two through holes are disposed on the bottom of the reflecting cup. The electrical conductive film comprises a first electrode and a second electrode, and is fixed to the second surface. The at least two conductive rods are respectively filled in the at least two through holes, and are respectively connected to the first electrode and the second electrode. The LED diode is mounted on one or at least two of the conductive rods, and is electrically connected to the at least two conductive rods. | 04-15-2010 |
| 20100090232 | POLYCHROMATIC LED AND METHOD FOR MANUFACTURING THE SAME - A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates. | 04-15-2010 |
| 20100070064 | METHOD AND SYSTEM FOR CONFIGURING HIGH CRI LED - A method and a system for configuring a high CRI LED is provided in this invention, by using an algorithm to compute which of at least two phosphors that can be mixed with the LED. A mixed-emitting spectrum can provide a high CRI white light at a predetermined color temperature. | 03-18-2010 |
| 20100067220 | LIGHT SOURCE ASSEMBLY USING LIGHT EMITTING DIODES AND REFLECTIVE SHEET SET - A light source assembly comprises a plurality of reflective sheets, a plurality of light emitting diodes and a printed circuit board. Each reflective sheet comprises a plate member and a plurality of openings formed on the plate member. The plurality of light emitting diodes are mounted on the printed circuit board. The plurality of reflective sheets are also mounted on the printed circuit board. The plurality of light emitting diodes are respectively located in the openings. The light emitted from the light emitting diodes is reflected by the surface of the plate member. | 03-18-2010 |
| 20100059785 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flip-chip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process. | 03-11-2010 |
| 20100053966 | LED LAMP AND HEAT-DISSIPATING WATERPROOF COVER THEREOF - An LED lamp includes an illumination apparatus and a heat-dissipating waterproof cover. The illumination apparatus includes LED modules; and the heat-dissipating waterproof cover is configured to cover the LED modules. The heat-dissipating waterproof cover includes a plurality of drain members, and a gap is formed between every two drain members so as to increase the air convection, thereby increasing heat dissipation efficiency of the LED modules. Every two adjacent drain members are partially overlapping in vertical to prevent the intrusion of water. | 03-04-2010 |
| 20100049181 | MEDICAL LIGHT DEVICE - A medical light device includes a main body, a light source, a filler, and a contact part. A cavity, receiving a light source, is disposed on the main body. The filler is composed of transparent material, filled inside the cavity, and covers the light source. The contact part, composed of soft and transparent material, is placed adjacent to the filler, covering the surface of the filler. The refractive index difference between the contact part and the filler is smaller than the refractive index difference between the filler and air. | 02-25-2010 |
| 20100043780 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell includes a substrate, a chip, a convex lens structure, and an infrared filter. The substrate has a groove in which the chip is placed. The chip can transform light energy into electric energy. Furthermore, the convex lens structure is placed over the groove. The infrared filter is attached to the incident surface of the convex lens structure. | 02-25-2010 |
| 20100032649 | LIGHT EMITTING DEVICE AND REDUCED POLARIZATION INTERLAYER THEREOF - A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of Al | 02-11-2010 |
| 20100027255 | LIGHT BOX APPARATUS - A light box apparatus comprises at least one light source, a frame, and a light guide plate. The frame, the side frames of which are made of metallic formed bars, has an accommodation space. The light guide plate, disposed in the accommodation space, has a lateral side. The frame has at least one side frame edge, which has an inlay groove adjacent to the lateral side, and the light, emitted from the light source disposed in the inlay groove, passes through the lateral side and transmits in the light guide plate. | 02-04-2010 |
| 20100020553 | PASSIVE HEAT SINK AND LIGHT EMITTING DIODE LIGHTING DEVICE USING THE SAME - A light emitting diode (LED) lighting device is provided. The LED lighting device includes an LED light bar and a passive heat sink. The passive heat sink includes a base and a plurality of heat sink fins. The LED light bar is placed on one side of the base, and the heat sink fins are placed on the other side of the base. The fins are fixed on the base by soldering. | 01-28-2010 |
| 20100019263 | ROUGH STRUCTURE OF OPTOELECTRONIC DEVICE AND FABRICATION THEREOF - A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure. | 01-28-2010 |
| 20100019256 | LIGHT EMITTING DEVICE WITH ELECTRON BLOCKING COMBINATION LAYER - A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers. | 01-28-2010 |
| 20100012962 | LIGHT EMITTING DIODE AND FABRICATION THEREOF - A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking. | 01-21-2010 |
| 20100009476 | SUBSTRATE STRUCTURE AND METHOD OF REMOVING THE SUBSTRATE STRUCTURE - A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process. | 01-14-2010 |
| 20100002465 | LIGHT EMITTING DIODE DEVICE AND BACKLIGHT MODULE USING THE SAME - A light emitting diode (LED) device comprises a substrate, an LED chip and an encapsulation body. The LED chip is mounted on the substrate, and the encapsulation body is overlaid on the LED chip and the substrate. The encapsulation body includes a light output surface. The light output surface can uniformly diffuse emission light over a wide angle in a first direction and concentrate the emission light in a second direction perpendicular to the first direction. | 01-07-2010 |
| 20100001299 | LIGHT EMITTING DIODE ILLUMINATING APPARATUS WITH SAME-TYPE LIGHT EMITTING DIODES - A light emitting diode illuminating apparatus for emitting colorful light includes a substrate, a first lighting element, a second lighting element, a third lighting element. The first, second and third lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating it. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The third lighting element includes a third LED chip and a third filling layer encapsulating it. All of the first, the second and the third LED chips are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitting from the filling layers are capable of mixing to produce light of a uniform color. | 01-07-2010 |
| 20090321780 | GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF - A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer. | 12-31-2009 |
| 20090321778 | FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A flip-chip light emitting diode includes a substrate, an LED chip and a plurality of conductive bumps. The substrate has at least one recess defined in the surface of the substrate, and at least a part of the conductive bumps is embedded the at least one recess. The LED chip is mounted on a surface of the substrate by a flip-chip mounting process. The conductive bumps are sandwiched between the substrate and the LED chip to bond and electrically connect the LED chip to the substrate. | 12-31-2009 |
| 20090315067 | SEMICONDUCTOR DEVICE FABRICATION METHOD AND STRUCTURE THEREOF - A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps. | 12-24-2009 |
| 20090308722 | KEYBOARD WITH LIGHTING SYSTEM - An exemplary keyboard is provided. The keyboard includes a light pervious base plate, a plurality of input keys, and at least one light source. The light pervious base plate has a top surface. The plurality of input keys are disposed on the light pervious base plate with bottom sides of the input keys facing the top surface of the light pervious base plate. The at least one light source is encapsulated in the light pervious base plate and optically coupled to the light pervious panel. | 12-17-2009 |
| 20090303713 | LIGHT SOURCE DEVICE - A light source device includes a circuit member, a heat dissipation component, an optical component and light emitting diode assemblies. The circuit member defines spaced through holes. The light emitting diode assemblies have a first side and a second side opposite to the first side. Each light emitting diode assembly passes through a corresponding through hole and is electrically connected to the circuit member. The heat dissipation component contacts the first side, is spaced from the circuit member, and is configured to dissipate heat generated by the light emitting diode assemblies. The optical component contacts the second side, and is configured to distribute light emitted from the light emitting diode assemblies. | 12-10-2009 |
| 20090296388 | LED LIGHTING MODULE - An LED lighting module comprises an array luminous element and a bar-like light guiding structure. The array luminous element comprises a plurality of illuminants of top-emitting LEDs arranged in an array form. The bar-like light guiding structure surrounds two laterals of the array luminous element. The bar-like light guiding structure comprises a first curved surface and a second curved surface. The first curved surface and the second curved surface respectively descend toward the middle of the array luminous element from the two sides of the array luminous element, and meet above the middle of the array luminous element. The first curved surface and the second curved surface connect with each other at the plane with a certain angle and in tangency where the positive optical axis exists. The positive optical axis is the direction perpendicular to the plane on which the LEDs are mounted. | 12-03-2009 |
| 20090280625 | METHOD FOR SEPARATING SEMICONDUCTOR LAYER FROM SUBSTRATE - A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate. | 11-12-2009 |
| 20090279286 | LIGHT MODULE FOR LCD BACKLIGHT MODULE - A light module of a LCD backlight module includes a circuit board and a plurality of light-emitting diodes (LEDs) arranged on the circuit board. Each of the LEDs has a wide far-field pattern, and each of the LEDs includes at least one LED chip and a molding unit packaging the LED chip. The LED chip is electrically connected to the circuit board. | 11-12-2009 |
| 20090278160 | RADIATION EMITTING SEMICONDUCTOR DEVICE - The present invention provides a radiation emitting semiconductor device, which comprises an active layer for emitting radiation, a p-type conductive layer, a transparent conductive layer, and a non-p-type ohmic contact layer. The p-type conductive layer is formed on the active layer. The transparent conductive layer is formed on the p-type conductive layer. The non-p-type ohmic contact layer is disposed between said p-type conductive layer and said transparent conductive layer. The non-p-type ohmic contact layer is configured to reduce the operating voltage of said radiation emitting semiconductor device. In addition, the present invention provides that the non-p-type ohmic contact layer is made of a quaternary alloy of Al | 11-12-2009 |
| 20090278152 | LIGHT EMITTING DIODE AND PACKAGE METHOD THEREOF - A light emitting diode comprises a sheet-like package body, a barricade, a light emitting diode die, and fluorescent filler. The sheet-like package body has a die-bonding region. The barricade is a transparent wall that is disposed on the die-bonding region, and is integrated with the sheet-like package body or is adhered to sheet-like package body. The light emitting diode die is disposed on the region enclosed by the barricade, and the fluorescent filler is also filled into the region and surrounds the light emitting diode die. The light emitting diode and the method for packaging the light emitting diode can improve the uniformity and efficiency of the outputting light emitted from the light emitting diode, and the loss of the outputted light is reduced. | 11-12-2009 |
| 20090278140 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device comprises the steps of: providing a substrate; forming a plurality of grooves on the substrate by photolithograph etching or laser engraving, wherein the plurality of grooves divides a surface of the substrate into a plurality of mesas and the substrate is a patterned substrate; and growing a semiconductor device (e.g. photo-electronic device or LED) on the patterned substrate. The semiconductor device comprises at least one layer, wherein the layer directly disposed on the patterned substrate is the first layer. The first layer comprises a plurality of separated regions divided by the grooves. | 11-12-2009 |
| 20090267097 | METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 10-29-2009 |
| 20090267090 | COLOR MIXING LIGHT EMITTING DIODE DEVICE - An exemplary color mixing light emitting diode (LED) device includes a substrate, LED dies, an encapsulating body, and a light mixing structure. The substrate has a main surface. The LED dies are arranged adjacent the main surface of the substrate. The light mixing structure is arranged adjacent an outer portion of the main surface of the substrate, around the LED dies. The encapsulating body encapsulates the LED dies and the light mixing structure. The light mixing structure is made of light transmissive material, and the light mixing structure has light scattering particles doped therein. | 10-29-2009 |
| 20090263298 | PHOTOCATALYST DEVICE - A photocatalyst device includes a photocatalyst member and a light source. The light source is configured to emit ultraviolet light to the photocatalyst member. The ultraviolet light has a wavelength equal to or less than about 400 nanometers, and more than 365 nanometers. | 10-22-2009 |
| 20090252655 | PHOTO-CATALYST AIR CLEANER - A photo-catalyst air cleaner includes at least one light source, a photo-catalyst filter and a first water supply. The photo-catalyst filter includes a hydrophilic substrate with a layer formed on a surface of the substrate exposed to light from the at least one light source. The water supply is configured for supplying water for absorption by the substrate, thereby humidifying surfaces of the photo-catalyst filter. | 10-08-2009 |
| 20090252654 | AIR CLEANER - An air cleaner includes a photo-catalyst filter, a light source and an ozone generator. The light source is configured for emitting light having a given wavelength to activate the photo-catalyst layer to decompose contaminants thereon. The ozone generator is configured for generating ozone flowing through the photo-catalyst layer to promote decomposition of the contaminants on the photo-catalyst layer. | 10-08-2009 |
| 20090250709 | LED PACKAGE AND LIGHT SOURCE DEVICE USING SAME - An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor. | 10-08-2009 |
| 20090249625 | METHOD FOR JOINTING A SEMICONDUCTOR ELEMENT AND A HEAT PIPE - An exemplary method for jointing a semiconductor element and a heat pipe includes: providing a heat pipe shell which has an open end; forming a capillary structure layer on an inner wall of the heat pipe shell; jointing a semiconductor element with the heat pipe shell by metal jointing; injecting a working fluid into the heat pipe shell and discharging air or gas from the heat pipe shell; and sealing the open end of the heat pipe shell. | 10-08-2009 |
| 20090242408 | PHOTO-CATALYST CLEANING DEVICE - A photo-catalyst cleaning device includes a first photo-catalyst layer and a first electrode plate. The first photo-catalyst layer is capable of generating electrons and holes when absorbing excitation light. The first electrode plate is positioned corresponding to the first photo-catalyst layer. The first electrode plate is capable of polarizing the electrons and holes generated from the first photo-catalyst layer when bias voltage is applied to the first electrode plate. | 10-01-2009 |
| 20090206358 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film. | 08-20-2009 |
| 20090166650 | LIGHT-EMITTING DEVICE OF GROUP III NITRIDE-BASED SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF - A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material. | 07-02-2009 |
| 20090152665 | FABRICATING METHODS OF PHOTOELECTRIC DEVICES AND PACKAGE STRUCTURES THEREOF - The invention discloses a method for fabricating a photoelectric device. A ceramic substrate is first provided, and then a first patterned electrode and a second patterned electrode are formed on and underneath the surface of the ceramic substrate. A plurality of photoelectric devices is sequentially connected to the first electrode layer with a wire solder or a eutectic joint method. The encapsulation materials cover the each photoelectric die to prevent damaged from the external force or environment. Cutting the ceramic substrate along the spaces between the photoelectric dies forms a plurality of independent package units. | 06-18-2009 |
| 20090152577 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode comprises a substrate having a first surface and a second surface, a light emitting epitaxy structure placed on the first surface of the substrate, and a compound reflection layer placed on the second surface of the substrate. The second surface of the substrate further has a protection structure. | 06-18-2009 |
| 20090141213 | LARGE-SCALE DISPLAY DEVICE - The present invention discloses a large-scale display device, which comprises a first display unit, a second display unit, a black margin area between the first display unit and the second display unit, and two polarizers attached to two surfaces of the first and second display units. The second display unit is arranged in parallel to the first display unit. | 06-04-2009 |
| 20090121249 | PACKAGE STRUCTURE OF A LIGHT EMITTING DIODE DEVICE AND METHOD OF FABRICATING THE SAME - A package structure for light emitting diode devices comprises a substrate having a reflective cavity, a die mounted inside the reflective cavity, a reflective layer disposed on the surface of the reflective cavity, a plurality of electrodes disposed under the surface of the substrate which is opposite to the reflective cavity, and a dual brightness enhancement film overlaid on the reflective cavity. The dual brightness enhancement film efficiently reflects the polarized light that is generated from the die and is not in a transparent direction back to the reflective layer. Subsequently, this light is reflected from the reflective layer to the dual brightness enhancement film. The portions of the reflected light propagating in the same direction as the transparent direction will transmit through the package structure. | 05-14-2009 |
| 20090121214 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 05-14-2009 |
| 20090078956 | PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer. | 03-26-2009 |
| 20090029494 | Package structure for solid-state lighting devices and method of fabricating the same - Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity and electrode access holes. Materials of the reflecting layer and electrode can be different from each other whose preferred materials can be chosen in accordance with a correspondent function. Formation of the electrode can be patterned by an etching method or a lift-off method. | 01-29-2009 |
| 20090022198 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin conductive film with a pattern, a die, at least one metal wire or metal bump and a transparent encapsulation material. The die is mounted on the first surface of the thin conductive film, and is electrically connected to the thin conductive film through the metal wire or the metal bump. The transparent encapsulation material is overlaid on the first surface of the conductive film and the die. A second surface of the conductive film is not covered by the transparent encapsulation material, and is opposite the first surface. | 01-22-2009 |
| 20080308822 | PACKAGE STRUCTURE OF LIGHT EMITTING DIODE FOR BACKLIGHT - A package structure of a light emitting diode for a backlight comprises a long-wavelength LED die and a short-wavelength LED die. The lights emitted from the two LED dies are mixed with the light emitted from excited fluorescent powders for serving as the backlight of a liquid crystal display. A partition plate is disposed between the two LED dies for separating them from each other. The effective light output of the package structure is increased because each of the two LED dies cannot absorb the light from the other. | 12-18-2008 |
| 20080246047 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer. | 10-09-2008 |
