| ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. Patent applications |
| Patent application number | Title | Published |
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| 20130122618 | LED PACKAGE AND MOLD OF MANUFACTURING THE SAME - A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode file cap layer covers the light emitting diode die. | 05-16-2013 |
| 20130119421 | LIGHT EMITTING DIODE EPITAXIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME - An LED epitaxial structure includes a substrate, a buffer layer, a functional layer and a light generating layer. The buffer layer is located on a top surface of the substrate. The functional layer includes a plurality of high-temperature epitaxial layers and low-temperature epitaxial layers alternatively arranged between the buffer layer and light generating layer. A textured structure is formed in the low-temperature epitaxial layer. A SiO2 layer including a plurality of convexes is located on the textured structure to increase light extraction efficiency of the LED epitaxial structure. A manufacturing method of the LED epitaxial structure is also disclosed. | 05-16-2013 |
| 20130099254 | LIGHT EMITTING DIODE WITH CHAMFERED TOP PERIPHERAL EDGE - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light emitting structure is a rounded top peripheral edge or a beveled top peripheral edge. A top surface of the substrate surrounding the light emitting structure is exposed to air and formed with micro-structures. | 04-25-2013 |
| 20130095583 | METHOD FOR MANUFACTURING LED - A method for manufacturing an LED is disclosed. Firstly, a base with two leads is provided. The base has a cavity defined in a top face thereof and two holes defined in two lateral faces thereof. The two holes communicate the cavity with an outside environment. A chip is fixed in the cavity and electrically connected to the two leads. A cover is placed on the top face of the base to cover the cavity. An encapsulation liquid is filled into the cavity through one hole until the encapsulation liquid joins a bottom face of the cover. Finally, the encapsulation liquid is cured to form an encapsulant. A top face of the cover functions as a light emergent face of the LED. | 04-18-2013 |
| 20130092951 | GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. | 04-18-2013 |
| 20130082293 | LED PACKAGE DEVICE - An LED package device comprises a substrate, an LED chip, a reflector and a covering layer. The covering layer completely encapsulates the reflector, the LED chip and the substrate to enhance the robustness and unitary integrity of the LED package device; two electrodes comprising two bulges penetrate through the covering layer to reach a base of the LED package device. The LED package device is able to function as a side emitting type of LED package. Front sides of the two bulges are level with a front side of the LED package device and configured for being mounted to a printed circuit board and electrically connecting therewith. | 04-04-2013 |
| 20130075779 | LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer and a transparent, electrically conductive layer formed in sequence. The transparent, electrically conductive layer includes a first transparent, electrically conductive layer on the second-type semiconductor layer and a second transparent, electrically conductive layer on the first transparent, electrically conductive layer. Both the first and second transparent, electrically conductive layers are made of indium tin oxide, while the first transparent, electrically conductive layer has a smaller thickness. During formation of the transparent, electrically conductive layer, a mass flow of introduced oxygen gas to the first transparent conductive layer is lower than that to the second transparent conductive layer. | 03-28-2013 |
| 20130069101 | METHOD FOR MANUFACTURING LED AND LED OBTAINED THEREBY - A method for manufacturing a light emitting diode is disclosed. Firstly, two leads each including a plateau are provided. A blocking layer is then formed on each plateau. A base is molded on the leads to embed the two leads therein, wherein the two blocking layer are exposed from the base. The blocking layers are removed from the plateaus so that the two plateaus are exposed. A light emitting chip is bonded on one plateau with a wire connecting the chip with the other plateau. Finally, an encapsulant is formed on the base to seal the chip and the wire. | 03-21-2013 |
| 20130069092 | LIGHT-EMITTING DIODE AND METHOD MANUFACTURING THE SAME - An LED includes a base, first and second electrodes embedded in the base, and an LED chip electrically connected with the first and second electrodes. The first electrode includes a first main body portion and three first branch portions. The second electrode includes a second main body and three second branch portions. The first and second branch portions are exposed at sidewalls of the base. One of the first branch portions and one of the second branch portions are exposed at two opposite lateral sides of the base respectively, and another one of the first branch portions and another one of the second branch portions are exposed at the same lateral side of the base. This disclosure also discloses a manufacture method for making the LED. | 03-21-2013 |
| 20130065332 | METHOD FOR MANUFACTURING LED WITH AN ENCAPSULANT HAVING A FLAT TOP FACE - A method for manufacturing LEDs is disclosed. A base is firstly provided. The base includes a plate, sidewalls formed on the plate and pairs of leads connected to the plate. The sidewalls enclose cavities above the plate. Light emitting chips are fixed in the cavities and electrically connected to the leads, respectively. Encapsulants are formed in the cavities to seal the light emitting chips. Each encapsulant has a convex top face protruding beyond top faces of the sidewalls. The convex top faces of the encapsulants are grinded to become flat. Finally, the base is cut to form individual LEDs. | 03-14-2013 |
| 20130062650 | LED PACKAGE AND MOLD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package. | 03-14-2013 |
| 20130062642 | LED PACKAGE DEVICE - An LED package device comprises a substrate, a first electrode, a second electrode, a reflector, an encapsulation layer and an LED die. The substrate includes a top surface and a bottom surface opposite to the top surface, wherein the first and the second electrodes are located on the top surface of the substrate. A sum of the areas of the first and the second electrodes on the top surface is smaller than ¼-⅔ the area of the top surface. Therefore, an increased contacting area between the reflector and the substrate is formed to enhance the tightness of the LED package device. | 03-14-2013 |
| 20130062636 | LED DEVICE HAVING TWO LED DIES SEPARATED BY A DAM - An LED device comprises a substrate, a circuit, two LED dies, a dam and a reflector. The dam divides the substrate into a first area and a second area, wherein one of the two LED dies is disposed on the first area and the other is disposed on the second area. The dam insulates radiant lights emitted from the two LED dies, whereby interference between the radiant lights can be prevented. Four separate electrodes are provided on the substrate, wherein one LED die is connected to two electrodes and the other LED die is electrically connected to the other two electrodes. | 03-14-2013 |
| 20130052764 | METHOD FOR PACKAGING LIGHT EMITTING DIODE - A method of packaging a light emitting diode comprising: providing a flexible substrate with a heat-conducting layer, an insulating layer covering on a surface of the heat-conducting layer and an electrically conductive layer positioned on the insulating layer; etching the conductive layer to form a gap in the conductive layer and expose a part of the insulating layer, the conductive layer being separated by the gap into a first electrode and a second electrode isolated from each other; stamping the flexible substrate with a mold at the position of the gap to form a recess in the flexible substrate; positioning a light emitting element on the conductive layer and electrically connecting the light emitting element to the conductive layer; and forming an encapsulation to cover the light emitting element. | 02-28-2013 |
| 20130049025 | LED PACKAGE DEVICE - An LED package device having a dam located on a substrate is provided, by which two regions are defined on the substrate. Two LED dies are respectively disposed on the two regions and separated by the dam; therefore, the LED package device has an enhanced intensity of the lateral-emitting light and a wide light emitting angle. The LED package devices can be used in backlight units to prevent mura and hot spot issues. | 02-28-2013 |
| 20130034920 | MANUFACTURING METHOD OF LED PACKAGE STRUCTURE - A method for manufacturing a plurality of holders each being for an LED package structure includes steps: providing a base, pluralities of through holes being defined in the base to divide the base into a plurality of basic units; etching the base to form a dam at an upper surface of each of the basic units of the base; forming a first electrical portion and a second electrical portion on each basic unit of the base, the first electrical portion and the second electrical portion being separated and insulated from each other by the dam; providing a plurality of reflective cups each on a corresponding basic unit of the base, each of the reflective cups surrounding the corresponding dam; and cutting the base into the plurality of basic units along the through holes to form the plurality of holders. | 02-07-2013 |
| 20130033857 | LED LIGHT BAR - An LED light bar comprises a housing, a circuit board with a plurality of separated portions located on the housing, a plurality of LED package devices disposed on the circuit board and electrically connecting to the circuit board, and a plurality of power dispensers respectively electrically connecting to the separated portions of the circuit board. The plurality of LED package devices is divided into a plurality of groups respectively on the plurality of separated portions of the circuit board, wherein the plurality of LED package devices of each of the groups forms a closed loop. Each separated portion of the circuit board includes a metal layer on the housing, an insulating layer on the metal layer and a circuit layer on the insulating layer. Each group of the LED package devices is on a corresponding circuit layer. | 02-07-2013 |
| 20130032839 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers. | 02-07-2013 |
| 20130032815 | LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. | 02-07-2013 |
| 20130032779 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed. | 02-07-2013 |
| 20130026520 | LIGHT-EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes a transparent encapsulation layer sealing the LED chip therein, and in one embodiment, the light transmission layer is located on the encapsulation layer and in another embodiment, the encapsulation layer also seals the light transmission layer therein. A method for manufacturing the LED package is also provided. | 01-31-2013 |
| 20130026510 | LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device includes a substrate, first and second LED chips arranged on the substrate, and a phosphor layer over the first and second LED chips. The phosphor layer includes a plurality of phosphor units, each including a phosphor particle and a silver halide layer encapsulating the phosphor particle. Light emitted from the second LED chip strikes the phosphor particles to generate a first light, which. combines with the light to generate a resultant light. The silver halide layer is reduced by the light from the first LED chip to produce silver particles around the phosphor particles. The silver particles can block the light emitted from the second LED chip from sticking the phosphor particles. By adjusting the current supplied to the first LED chip, the color temperature of the resultant light generated by the LED device can be changed. | 01-31-2013 |
| 20130020607 | LED MODULE AND METHOD FOR MANUFACTURING THE SAME - An LED (light emitting diode) module includes a circuit board and a plurality of LEDs mounted on the circuit board. The circuit board includes a support layer, an insulative layer and a conductive layer sequentially stacked on each other. The circuit board is embossed to form a plurality of pleats on top and bottom surfaces thereof, to thereby increase heat dissipation area of the circuit board. | 01-24-2013 |
| 20130017632 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODEAANM CHEN; PIN-CHUANAACI HukouAACO TWAAGP CHEN; PIN-CHUAN Hukou TW - A method for manufacturing LEDs (light emitting diodes) includes steps: providing a substrate; attaching an adhesive layer on the substrate; forming a blocking layer on the adhesive layer, the blocking layer having a plurality of first holes and second holes alternating with and spaced from the first holes; forming a conductive layer including first leads and second leads in the first holes and the second holes; removing the blocking layer; forming a housing layer on the adhesive layer, the housing layer having a plurality of cavities to expose the first leads and second leads; fixing chips on the first leads and electrically connecting the chips with the first and second leads; forming encapsulants in the cavities to seal the chips; and removing the substrate and adhesive layer from the housing layer and the conductive layer. | 01-17-2013 |
| 20130015490 | LED AND METHOD FOR MANUFACTURING THE SAMEAANM LIN; HSIN-CHIANGAACI HsinchuAACO TWAAGP LIN; HSIN-CHIANG Hsinchu TWAANM CHEN; PIN-CHUANAACI HsinchuAACO TWAAGP CHEN; PIN-CHUAN Hsinchu TW - An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof. Top faces of the leads are exposed in the chamber. A blocking wall is formed in the chamber to contact the exposed top faces of the leads. A bonding force between the blocking wall and the leads is larger than that between the leads and the housing. A method for manufacturing the LED is also disclosed. | 01-17-2013 |
| 20130015479 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAMEAANM LIN; HSIN-CHIANGAACI HukouAACO TWAAGP LIN; HSIN-CHIANG Hukou TWAANM CHEN; PIN-CHUANAACI HukouAACO TWAAGP CHEN; PIN-CHUAN Hukou TW - An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode. | 01-17-2013 |
| 20130015472 | METHOD FOR PACKAGING LIGHT EMITTING DIODES AND LIGHT EMITTING MODULE HAVING LED PACKAGES FORMED BY THE METHODAANM LO; HSING-FENAACI HukouAACO TWAAGP LO; HSING-FEN Hukou TW - A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process. | 01-17-2013 |
| 20130009178 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package includes an electrically insulated base, first and second electrodes, an LED chip, a voltage stabilizing module, and an encapsulative layer. The base has a first surface and an opposite second surface. The first and second electrodes are formed on the first surface of the base. The LED chip is electrically connected to the first and second electrodes. The voltage stabilizing module is formed on the first surface of the base, positioned between and electrically connected to the first and second electrodes. The voltage stabilizing module connects to the LED chip in reverse parallel and has a polarity arranged opposite to that of the LED chip. The voltage stabilizing module has an annular shape and encircles the first electrode. The encapsulative layer is formed on the base and covers the LED chip. | 01-10-2013 |
| 20120326200 | FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME - A flip-chip light emitting diode comprising: a substrate; a circuit layer formed on the substrate, the circuit layer comprising a first electrode and a second electrode separated and electrically insulated from the first electrode; an LED chip arranged on the circuit layer, the LED chip comprising a positive electrode and a negative electrode, the positive electrode and the negative electrode which are located at a bottom face of the LED chip being in electrical connection to the first electrode and the second electrode of the circuit layer by solder, respectively; and a blocking structure located between the positive electrode and the negative electrode, the blocking structure being made of elastic and electrically insulating, colloidal material. | 12-27-2012 |
| 20120326175 | LED PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface for emitting light of the LED package. The electrode structure is sandwiched between the first substrate and the second substrate. The LED die is mounted in the substrate and electrically connected to the electrode structure. The reflective layer is formed on an outer surface of the substrate except the emitting surface and the bulging portions. The disclosure also provides a method for manufacturing such an LED package. | 12-27-2012 |
| 20120322183 | METHOD FOR FABRICATING LIGHT EMITTING DIODE - A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures. | 12-20-2012 |
| 20120322179 | METHOD FOR PACKAGING LIGHT EMITTING DIODES - A method for packaging LEDs includes steps of: forming a substrate with a rectangular frame, a plurality of first and second electrode strips received within the frame and alternately arranged along a width direction of the frame; forming a carrier layer on each pair of the first and second electrode strips, the carrier layer defining a plurality of recesses; arranging an LED die in each recess and electrically connecting the LED die with first and second electrodes; forming an encapsulation in each recess to cover the LED die; and cutting the first and second electrode strips along the width direction of the frame to obtain a plurality of separated LED packages each including the first and second electrodes, the LED die, the encapsulation and a part of the carrier layer. | 12-20-2012 |
| 20120315713 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A method for manufacturing an LED package, comprising steps of: providing a substrate, the substrate forming a plurality of spaced rough areas on a surface thereof, each of the rough areas forming a rough structure thereon, a block layer being provided on a remaining part of the surface of the substrate relative to the rough areas; forming a metal layer on a top surface of each rough structure; forming a reflector on the substrate, the reflector defining a cavity and surrounding two adjacent metal layers; arranging an LED chip in the cavity, the LED chip electrically connecting to the two adjacent metal layers; forming an encapsulation layer in the cavity to seal the LED; and separating the substrate from the metal layers, the encapsulation layer and the reflector. | 12-13-2012 |
| 20120313126 | LED PACKAGE - An LED package comprises an encapsulation layer, an LED die and two electrodes. The LED die is capable of emitting a first light beam with a first wavelength, and, respectively, electrically connecting to the two electrodes. The encapsulation layer covers the LED die, and comprises a luminescent conversion element and a light-compensating element. A heat exhaustion of the luminescent conversion element is converse to that of the light-compensating element. The second and third wave lengths of the second and third light beams generated by the luminescent conversion element and the light-compensating element have oppositely different rates of change when temperatures of the luminescent conversion element and the light-compensating element are increased | 12-13-2012 |
| 20120305961 | LED DEVICE AND METHOD FOR MANUFACTURING THE SAME - An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided. | 12-06-2012 |
| 20120305960 | LED PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate, an electrode structure, an LED die, a packaging portion, and a covering portion. The electrode structure is formed on the substrate. The LED die is mounted on the substrate, and electrically connected to the electrode structure. The packaging portion covers the LED die. The covering portion surrounds a periphery of the LED package and seals a joint between the substrate, the electrode structure and the packaging portion. The covering portion is made of silicone-titanate resin with reactive monomers, wherein the reactive monomers comprises more than 60% of heptane, 7.0% to 13.0% of allytrimethoxysilane, 5.0% to 10.0% of tetrabutyl titanate, and less than 0.1% of tetramethoxysilane. | 12-06-2012 |
| 20120292633 | LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - An LED array includes a substrate and a plurality of LEDs formed on the substrate. The LEDs are electrically connected with each other. Each of the LEDs includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the n-type GaN layer which connects the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. A method for manufacturing the LED array is also provided. | 11-22-2012 |
| 20120280639 | PLANAR LIGHTING MODULE - A planar lighting module comprises a substrate, at least one light guide device and a driver. A frame is located on the substrate for fastening the at least one light guide device and the driver. By manipulation and binding, the planar lighting module can be easily assembled or dismantled, no screws or welded joints are used, and it is also convenient to service. | 11-08-2012 |
| 20120280262 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF - A semiconductor light emitting device comprises a circuit, a reflector, an LED chip, an encapsulation layer and a luminescent conversion layer. The encapsulation layer comprises an annular projection formed outside the encapsulation layer. The circuit and the LED chip are covered by the encapsulation layer, wherein the annular projection of the encapsulation layer is inside the reflector; the encapsulation layer also fills in an interspace between two electrodes of the circuit. Therefore the semiconductor light emitting device is rigid and strongly resistant to water vapor and similar contaminants. | 11-08-2012 |
| 20120273830 | LIGHT EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME - An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer. | 11-01-2012 |
| 20120273829 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODES AND LIGHT EMITTING DIODES OBTAINED THEREBY - A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs. | 11-01-2012 |
| 20120273820 | LED PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate, an LED die, electrodes, a reflective cup, a barrier portion and an encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The electrodes are formed on the substrate and spaced from each other. The barrier portion is formed on the electrodes and covered by the reflective cup, wherein a bonding force between the barrier portion and the electrodes is larger than that between the reflective cup and the electrodes. The LED die is mounted on one of the electrodes, received in the reflective cup and electrically connected to the electrodes via wire bonding. The disclosure also provides a method for making an LED package. | 11-01-2012 |
| 20120273819 | LED PACKAGE STRUCTURE - An LED package structure includes a substrate, two electrodes engaged in the substrate, an LED chip, a reflective cup and an encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. Each of the electrodes defines a groove. The grooves surrounding the LED chip. The LED chip is mounted on one of the electrodes and electrically connected to the two electrodes. The reflective cup is mounted on the substrate and surrounds the LED chip. The encapsulation covers the LED chip and extends in the grooves of the electrodes to prevent water/moisture from entering the LED chip. | 11-01-2012 |
| 20120273809 | LIGHT EMITTING DIODE DEVICE - An LED package includes a substrate, a first LED module and a second LED module. The first LED module includes a plurality of first LEDs arranged at the substrate. The second LED module includes a plurality of second LEDs arranged at the substrate and surrounding the first LED module. A luminous intensity of the first LED module is less than a luminous intensity of the second LED module. | 11-01-2012 |
| 20120273757 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity. | 11-01-2012 |
| 20120261696 | LIGHT EMITTING DIODE EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting device (LED) epitaxial structure includes a substrate, a nitride semiconductor layer, a patterned oxide total-reflective layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer. The nitride semiconductor layer is formed on the substrate. The patterned oxide total-reflective layer is formed on the nitride semiconductor layer. An upper surface of the nitride semiconductor layer is partially exposed out from the oxide total-reflective layer. The first-type semiconductor layer is arranged on the exposed upper surface of the nitride semiconductor layer and covers the oxide total-reflective layer. The active layer is arranged on the first-type semiconductor layer. The second-type semiconductor layer is arranged on the active layer. | 10-18-2012 |
| 20120256219 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - An LED package includes a substrate, an electrode layer, a light-emitting chip, a reflection cup and an encapsulation. The substrate includes a first surface, an opposite second surface, and two side surfaces. The electrode layer is consisted of a positive electrode and a negative electrode, each of which extends from the first surface to the second surface via a respective side surface. The light-emitting chip is located on the first surface of the substrate and electrically connected to the electrode layer. The reflection cup comprises a first part covering the electrode layer on the side surfaces of the substrate, a second part with a bowl-like shape on the first surface of the substrate and surrounding the light-emitting chip. The encapsulation is filled in the second part of the reflection cup. | 10-11-2012 |
| 20120256162 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, an N-type semiconductor layer arranged on the substrate, an active layer, and a P-type semiconductor layer. The active layer includes a first barrier layer, a second barrier layer, and a quantum well structure layer arranged between the first and second barrier layers. The quantum well structure layer includes an InN layer, a GaN layer and an InGaN layer arranged on the first barrier layer in sequence. The InN layer has an upper surface connected to the GaN layer. The upper surface is rough. The InGaN layer has a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof. The P-type semiconductor layer is arranged on the second barrier layer. | 10-11-2012 |
| 20120248482 | LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes an electrode, an LED chip, and an insulation layer. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode are separate from each other. The LED chips are connected to the first and second electrodes. The insulation layer covers the first and second electrodes and the LED chip. A cavity is defined in the first electrode for receiving the LED chip therein. A channel is defined between the first electrode and the second electrode. The channel communicates with the cavity and the insulation layer fills in the cavity and the channel. | 10-04-2012 |
| 20120244651 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing light emitting diodes includes steps: providing a substrate having an upper conductive layer and a lower conductive layer formed on a top face and bottom face thereof; dividing each of the upper conductive layer and the lower conductive layer into first areas and second areas; defining cavities in the substrate through the first areas of the upper conductive layer to expose the lower conductive layer; forming conductive posts within the substrate; forming an overlaying layer to connect the first areas of the upper and lower conductive layers; mounting chips on the overlaying layer within the cavities and electrically connecting each chip with an adjacent first area and post; forming an encapsulant on the substrate to cover the chips; and cutting the substrate into individual packages. | 09-27-2012 |
| 20120241790 | LED PACKAGE - An LED package comprises a substrate, a reflector, a light-absorbable layer, an encapsulation layer and an LED chip. The reflector comprises a first incline with an inclined angle surrounding the LED chip. The light-absorbable layer comprises a second incline with another inclined angle direct to the LED chip, wherein the inclined angle of the second incline is greater than that of the first incline and the inclined angle of the first incline is between 90 to 150 degrees. | 09-27-2012 |
| 20120241789 | LED PACKAGE, METHOD FOR MAKING THE LED PACKAGE AND LIGHT SOURCE HAVING THE SAME - An LED package includes a light transmissive encapsulation, an LED die, a fluorescent layer, a baffle wall, a positive electrode and a negative electrode. The encapsulation includes a light emitting surface and a bottom surface opposite to the light emitting surface. The LED die, the fluorescent layer and the baffle wall are embedded in the encapsulation from the bottom surface side. The LED die includes a front surface for outputting light outward and a back surface opposite to the front surface. The front surface faces the light emitting surface of the encapsulation, and the back surface is exposed outside. The fluorescent layer is formed on the front surface of the LED die. The baffle wall surrounds the LED die and the fluorescent layer. The positive electrode and negative electrode are electrically connected to the LED die. | 09-27-2012 |
| 20120241773 | LED BAR MODULE WITH GOOD HEAT DISSIPATION EFFICIENCY - An LED bar module includes a lengthwise base and a number of LED chips. The lengthwise base includes a metal layer, a metal circuit layer, and an insulated layer between the metal layer and the metal circuit layer. The insulated layer has a groove in a central thereof to expose a part of the metal layer. The LED chips are placed in the groove and directly contact the exposed part of the metal layer. The metal circuit layer has two connecting portions electrically connecting with the LED chips. The LED chips are arranged in a line which is located between and juxtaposed with the two connecting portions of the metal circuit layer. | 09-27-2012 |
| 20120235194 | LIGHT EMITTING DIODE PACKAGE - An LED package includes an insulated frame, a first metallic conductor and a second metallic conductor, a chip and an encapsulation. The insulated frame has a receiving groove defined therein. The two metallic conductors are both mounted on bottom of the insulated frame and separated from each other. The chip is placed in the receiving groove and electrically connected to the two metallic conductors. The encapsulation is located in the receiving groove. The first metallic conductor and the second metallic conductor each comprise a mounting portion exposed to the receiving groove and a reflecting portion extending from the mounting portion into the insulated frame. The first reflecting portion and the second reflecting portion cooperatively surround the receiving groove of the insulated frame. | 09-20-2012 |
| 20120235193 | LED PACKAGE - An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties. | 09-20-2012 |
| 20120235192 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package comprises a light emitting diode chip, a first luminescent conversion layer and a separate second luminescent conversion layer on the first luminescent conversion layer. The first luminescent conversion layer has a first luminescent conversion element surrounding the light emitting diode chip. The second luminescent conversion layer has a second luminescent conversion element located above the light emitting diode chip. An excitation efficiency of the first luminescent conversion element is higher than that of the second luminescent conversion element. | 09-20-2012 |
| 20120235157 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the connecting layer being etchable by alkaline solution, a bottom surface of the second n-type GaN layer facing towards the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity, a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer, and an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding each blind hole. | 09-20-2012 |
| 20120228646 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate; a plurality of LED units formed on the substrate; and a phosphor tape arranged on the LED units. Light from the LED units travels to an external environment through the phosphor tape. The phosphor tape has phosphor particles evenly distributed therein. A method for forming the LED package is also provided. | 09-13-2012 |
| 20120224379 | LIGHT EMITTING DIODE DEVICE - An LED device includes a substrate, an LED chip and a lens module. The substrate has an upper surface. The LED chip is arranged on the upper surface of the substrate. The LED chip has a light emitting surface away from the upper surface of the substrate. The lens module is arranged over the light emitting surface of the LED chip. The lens module includes a first lens. The first lens includes a first light outputting surface away from the light emitting surface of the LED chip. The first light outputting surface of the first lens defines a first cavity at a center thereof. | 09-06-2012 |
| 20120223324 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence. | 09-06-2012 |
| 20120217525 | LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DEVICE HAVING THE SAME - An LED package includes a light transmissive encapsulation, an LED die embedded in the encapsulation from a bottom surface of the encapsulation, a positive electrode electrically connected to an anode of the LED die, and a negative electrode electrically connected to a cathode of the LED die. The encapsulation includes a light emitting surface opposite to the bottom surface thereof. The LED die includes a front surface for outputting light outward, and a back surface opposite to the front surface. The front surface is covered by the encapsulation and faces the light emitting surface of the encapsulation. The back surface is exposed outside. A light emitting device is provided by mounting the LED package to a circuit board. The circuit board has a heat conductor connecting with the LED die. | 08-30-2012 |
| 20120217046 | CONDUCTIVE SUBSTRATE FOR FORMATION OF LED PACKAGE STRUCTURES THEREON - A plurality of conductive areas is formed on a conductive substrate which includes a frame. Each of the conductive areas includes a lead frame and two electrodes. The frame includes a first side and an opposite second side. The lead frame includes first and second lead frame beams. The first and second lead frame beams extend from the first side toward the second side to connect with the two electrodes. The first and second electrodes extend respectively from the first and second lead frame beams. Each conductive area also includes a supporting portion interconnecting the electrodes and the frame to reinforce the connection between the frame and the conductive area so that the conductive area can sustain a pressure when an insulation shell is injection molded on the conductive area. | 08-30-2012 |
| 20120214264 | MANUFACTURING METHOD FOR LED PACKAGE - The disclosure provides a manufacturing method for an LED package. A first luminescent conversion layer comprising one first luminescent conversion element is located on an LED chip, wherein the first luminescent conversion element is precipitated via centrifugation around the LED chip without sheltering the LED chip. Thereafter, a second luminescent conversion layer is located on the first luminescent conversion layer. The second luminescent layer has a second luminescent conversion element which has an excited efficiency lower that that of the first luminescent conversion element. | 08-23-2012 |
| 20120212964 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a substrate, a transparent base, an LED chip and a reflective layer. The substrate has an upper surface. The transparent base is arranged on the upper surface of the substrate. The transparent base includes a first surface away from the substrate and a second surface opposite to the first surface. The LED chip is arranged on the first surface of the transparent base. The reflective layer is arranged between the substrate and the second surface of the transparent base. | 08-23-2012 |
| 20120211786 | LED PACKAGE STRUCTURE WITH A WIDE OPTICAL FIELD - An LED package structure with a wide optical field comprises a substrate, an LED chip, and an encapsulation. The substrate has at least two electrodes and a carrier. The carrier has a carrier surface. The carrier surface is higher than a top surface of the substrate and higher than the electrodes. The LED chip is mounted on the carrier surface. The LED chip electrically connects with the electrodes via wires. The encapsulation covers the LED chip. The LED chip has a wide light emitting angle. | 08-23-2012 |
| 20120211771 | LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. | 08-23-2012 |
| 20120205690 | GROUP III-NITRIDE BASED SEMICONDUCTOR LED - A group III-nitride based semiconductor LED includes a sapphire substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer grown sequentially on the sapphire substrate. An n-type strain lattice structure is arranged between the n-type semiconductor layer and the active layer. A lattice constant of the n-type strain lattice structure exceeds that of the active layer, and is less than that of the n-type semiconductor layer. | 08-16-2012 |
| 20120196391 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer. | 08-02-2012 |
| 20120190141 | METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR - A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength. | 07-26-2012 |
| 20120187436 | LIGHT EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) device includes a substrate, a supporting member, an electrode layer, an LED chip and an encapsulant. The substrate has a first surface and a second surface. The substrate defines a hole extending through the first surface and the second surface. The supporting member is attached to the second surface of the substrate and covers the hole. The supporting member and the substrate cooperatively define a cavity. The electrode layer is arranged on the first surface of the substrate and an inner surface of the cavity. The encapsulant is arranged on the electrode layer and covers the LED chip. | 07-26-2012 |
| 20120175656 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a base, a chip mounted on the base, and an encapsulant layer encapsulating the chip. The encapsulant layer includes a light exit face for light generated generated by the chip transmitting through. A plurality of microstructures are formed on the light exit face. Distribution of the microstructures has the following characters: a density of the microstructures is inversely proportional to a light intensity of the light at the light exit face; and a size of the microstructures is inversely proportional to the light intensity of the light at the light exit face. | 07-12-2012 |
| 20120175646 | LIGHT EMITTING DIODE MODULE - An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects. | 07-12-2012 |
| 20120175630 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section. | 07-12-2012 |
| 20120175628 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer. | 07-12-2012 |
| 20120171791 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating an LED chip is provided. Firstly, a SiO | 07-05-2012 |
| 20120168797 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting diode chip, comprising steps: providing a substrate with a first patterned blocking layer formed thereon; growing a first n-type semiconductor layer on the substrate between the constituting parts of first patterned blocking layer, and stopping the growth of the first n-type semiconductor layer before the first n-type semiconductor layer completely covers the first patterned blocking layer; removing the first patterned blocking layer, whereby a plurality of first holes are formed at position where the first patterned blocking layer is originally existed; continuing the growth of the first n-type semiconductor layer until the first holes are completely covered by the first n-type semiconductor layer; and forming an active layer and a p-type current blocking layer on the first n-type semiconductor layer successively. | 07-05-2012 |
| 20120164773 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure. | 06-28-2012 |
| 20120164764 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure. | 06-28-2012 |
| 20120161179 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a base, an LED die arranged on the base, an encapsulation sealing the LED die, and a light wavelength converting layer arranged on a light path of the LED die. The light wavelength converting layer includes a plurality of first areas comprising red fluorescent powder, a plurality of second areas comprising green fluorescent powder and a plurality of third areas comprising blue fluorescent powder. The first, second and third areas are aligned along a first direction and a second direction perpendicular to the first direction. Each two neighboring areas on the first direction have different colors. Each two neighboring areas on the second direction also have different colors. | 06-28-2012 |
| 20120161178 | LED PACKAGE AND CHIP CARRIER THEREOF - An LED package includes a chip carrier, an LED chip, and an encapsulation. The chip carrier includes a first surface, a second surface opposite to the first surface, and a side surface interconnecting the first surface and the second surface. The chip carrier includes an insulator defining two holes, and two electrodes. Each electrode includes a first contact end exposed on the first surface and separated from the side surface by the insulator, a second contact end exposed on the second surface, and a connecting portion connecting the first contact end to the second contact end; the connecting portion has a bent part received in the hole. The LED chip is mounted on the first surface of the chip carrier. The encapsulation covers the LED chip. | 06-28-2012 |
| 20120156815 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating an LED chip includes: providing a sapphire substrate with a SiO | 06-21-2012 |
| 20120153332 | EPITAXIAL STRUCTURE OF AN LED AND MANUFACTURING METHOD THEREOF - An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave. | 06-21-2012 |
| 20120153326 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation. | 06-21-2012 |
| 20120142133 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of providing a substrate with an epitaxial layer thereon. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer successively grown on the substrate. The epitaxial layer has dislocation defects traversing the first semiconductor layer, the active layer and the second semiconductor layer. The epitaxial layer is then subjected to an etching process which remove parts of the second semiconductor layer and the active layer along the dislocation defects to form recesses recessing from the second semiconductor layer to the active layer. Thereafter a first electrode and a second electrode are formed on the first semiconductor layer and the second semiconductor layer, respectively. | 06-07-2012 |
| 20120140449 | LIGHT MODULE FOR LCD BACKLIGHT MODULE - A light module of an LCD backlight module includes a circuit board and a plurality of light-emitting diodes (LEDs) arranged on the circuit board. Each of the LEDs has a wide far-field pattern and is without a reflector, and each of the LEDs includes at least one LED chip and a molding unit packaging the LED chip. The LED chip is electrically connected to the circuit board and is also suitable for backlighting use. When a light-emitting angle of each of the LEDs is at 120 degrees, a light intensity thereof is still more than 50% of the intensity at frontage. | 06-07-2012 |
| 20120139002 | LED PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LED package structure comprises a substrate, two electrodes arranged on the substrate, an LED chip arranged on the substrate and electrically connected to the electrodes, an encapsulation covering the LED chip, and a shell surrounding the substrate and the encapsulation. The shell includes walls, of a height which exceeds the thickness of the substrate and so functions as a reflector. A circuit structure connected to the electrodes is arranged on the bottom of the walls. | 06-07-2012 |
| 20120138983 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a substrate, a blue LED chip, an encapsulant and a fluorescent layer. The blue LED chip is arranged on the substrate. The encapsulant covers the blue LED chip. The fluorescent layer is arranged on a top surface of the encapsulant. The fluorescent layer includes a first fluorescent area above the blue LED chip and a second fluorescent area encircling the first fluorescent area. The first fluorescent area includes red fluorescent substance and green fluorescent substance mixed therein. The second fluorescent area includes yellow fluorescent substance mixed therein. | 06-07-2012 |
| 20120132942 | LIGHT EMITTING DIODE PACKAGE - An exemplary LED package includes first and second electrodes, an LED chip and two electrically conductive wires. The first electrode has a top surface and an opposite bottom surface. A recess is defined in the top surface of the first electrode. The second electrode has a top surface and an opposite bottom surface. A recess is defined in the top surface of the second electrode. The LED chip has a bottom surface attached to the top surface of the first electrode, and a top surface on which a first pad and a second pad are formed. One of the electrically conductive wires has an end connecting to the first pad and an opposite end joining with a bottom of the recess of the first electrode. The other has an end connecting to the second pad and an opposite end joining with a bottom of the recess of the second electrode. | 05-31-2012 |
| 20120127742 | LED MODULE - An LED module includes a substrate comprising a base plate and an elastic arm extending from a periphery side of the base plate. The elastic arm includes a horizontal portion parallel to and spaced from the base plate. A receiving space is defined between the horizontal portion of the elastic arm and the base plate. A circuit layer is formed on the base plate. An LED is mounted on the base plate and electrically connects with the circuit layer. The LED comprises a base and at least one electrode extending outwardly from the base. The LED is fixed on the substrate via the at least one electrode slideably received in the receiving space with a downward force applied on the electrode by the horizontal portion of the elastic arm. | 05-24-2012 |
| 20120126265 | LED PACKAGE - An exemplary LED package includes a substrate, an electric layer formed on the substrate, an LED chip mounted on the substrate and electrically connected with the electric layer, a first fluorescent layer and a second fluorescent layer. The first fluorescent encloses the LED chip and includes first phosphorous compounds. The second fluorescent covers the first fluorescent layer and includes second phosphorous compounds different from the first phosphorous compounds. The second fluorescent layer is detachably mounted at an outside of the first fluorescent layer. | 05-24-2012 |
| 20120126264 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An exemplary light emitting diode (LED) package includes a substrate having a first electrical portion and a second electrical portion formed thereon, two antioxidation layers formed on and electrically connected to the first electrical portion and the second electrical portion, respectively, and an LED chip disposed on the substrate and electrically connected to the two antioxidation layers. | 05-24-2012 |
| 20120122256 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the upper and lower conductive layers into discrete strips; forming a connection layer on an inner circumferential face of each hole to connect the opposite strips of the upper and lower conductive layers; filling a supporting layer in an upper portion of each hole; forming a reinforcing layer on the supporting layer and the upper conductive layer; fixing chips on the reinforcing layer and electrically connecting the chips with the strips of the upper conductive layer; forming an encapsulant on the reinforcing layer; and cutting the base into individual LEDs along the holes. | 05-17-2012 |
| 20120119665 | LIGHTING DEVICE WITH ADJUSTABLE COLOR TEMPERATURE - A lighting device with adjustable color temperature includes a power, a driver, and a plurality of branches. The power is electrically connected to the driver for supplying power to the driver. Each of the branches includes a light source and an adjustor connected in series. The adjustor controls the color temperature of the light source in a corresponding branch by adjusting the voltage through the corresponding branch. | 05-17-2012 |
| 20120119244 | LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation. | 05-17-2012 |
| 20120112223 | LED PACKAGE - An LED package includes a substrate, an LED chip, a transparent thermal insulation layer and an encapsulation including phosphor. The LED chip is arranged on the substrate and electrically connected to the substrate. The transparent thermal insulation layer is located between the LED package and the package layer whereby the phosphor is not affected by a high temperature generated by the LED chip when the LED chip is activated to generate light. | 05-10-2012 |
| 20120107975 | METHOD FOR PACKAGING LIGHT EMITTING DIODE - An LED packaging method includes: providing a mold with two isolated receiving spaces and a substrate with a die supporting portion and an electrode portion respectively received in the two receiving spaces; disposing an LED die on the die supporting portion and electrically connecting the LED die to the electrode portion of the substrate by metal wires; injecting a light wavelength converting material into the first receiving space and covering the LED die with the light wavelength converting material; communicating the first receiving space to the second receiving space, injecting a first light transmissive material into the communicated first and second spaces, and covering the light wavelength converting material and the metal wires with the first light transmissive material; and removing the mold to obtain a packaged LED. | 05-03-2012 |
| 20120104442 | LED AND MANUFACTURING METHOD - An LED includes a substrate, an LED chip setting on the substrate and a reflection cup surrounding the LED chip on the substrate. The LED chip electrically connects with two electrodes setting on the substrate. The reflection cup is filled with an encapsulating material. A fluorescent layer is formed by heating the encapsulating material and deposits on an end of the encapsulation away from the LED chip. The fluorescent layer is used for converting light from the LED chip into a specific wavelength. | 05-03-2012 |
| 20120104438 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - An LED package structure includes a substrate, a first electrical portion and a second electrical portion formed on the substrate, and an LED chip mounted on a first surface of the first electrical portion. The first and second electrical portions are electrically insulated from each other. The LED chip includes a first electrode connected with the first electrical portion and a second electrode connected with the second electrical portion through a connecting wire. The LED chip has a top surface for supporting the second electrode. The connecting wire has a highest point. A distance between the highest point and the top surface is less than a half of a distance between the first surface of the first electrical portion and the top surface of the LED chip. | 05-03-2012 |
| 20120104407 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer is formed on the substrate, the first n-type GaN layer has a first surface facing away from the substrate, and the first surface includes a first area and a second area. The connecting layer, the second n-type GaN layer, the light emitting layer, and the p-type GaN layer are formed on the first area in sequence. The connecting layer is etchable by alkaline solution; a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughened exposed portion; the GaN on the bottom surface of the second n-type GaN layer is N-face GaN. | 05-03-2012 |
| 20120100656 | METHOD FOR MAKING A SOLID STATE SEMICONDUCTOR DEVICE - A method for making a solid state semiconductor device includes: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer; forming a surface-textured second epitaxial layer on the first epitaxial layer by chemical vapor deposition; and forming a solid state stacked layer structure having a PN-junction type light-emitting part on a textured surface of the second epitaxial layer. | 04-26-2012 |
| 20120100648 | METHOD FOR MANUFACTURING LIGHT EMITTING CHIP - A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels. | 04-26-2012 |
| 20120100646 | METHOD FOR DISTRIBUTING PHOSPHOR PARTICULATES ON LED CHIP - A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric field through the adhesive and moving the upper mold to press the adhesive, wherein the phosphor particulates are driven by the electric field to move to a top face of the chip; and curing the adhesive and removing the upper mold and the lower mold. | 04-26-2012 |
| 20120098021 | LED PACKAGE - An LED package includes a substrate, an LED chip and an encapsulation. The substrate includes a main plate, and a first soldering pad and a second soldering pad attached to the main plate. The first soldering pad and the second soldering pad are separated from each other. The LED chip includes a first electrode and a second electrode. The LED chip is mounted on the substrate with the second electrode electrically connected to the second soldering pad of the substrate. The encapsulation includes a main body enclosing the LED chip and an electric connecting unit electrically connecting the first electrode of the LED chip and the first soldering pad. | 04-26-2012 |
| 20120098010 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, a light emitting element, and a package member. The substrate includes a first solder pad and a second solder pad. The light emitting element is mounted on the substrate and includes a p-type electrode and an n-type electrode. The package member is configured for enveloping the light emitting element. A first electrode and a second electrode are formed on the package member. The first electrode and the second electrode of the package member are electrically coupled to the p-type electrode and the n-type electrode of the light emitting element. The first electrode and the second electrode of the package member are electrically coupled to the first solder pad and the second solder pad of the substrate. | 04-26-2012 |
| 20120098007 | LED UNIT HAVING ELECTROCHROMIC ELEMENT - An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a second area around the first area. The first area contains yellow phosphor therein, and the second area contains red phosphor therein. The electrochromic element has an opening through which the first area of the encapsulant is exposed. The second area of the encapsulant is covered by the electrochromic element. The electrochromic element can change its color when being electrified, thereby changing the color temperature of the light output from the LED unit. | 04-26-2012 |
| 20120098005 | LED PACKAGE - An exemplary encapsulation structure for encapsulating an LED chip includes a first encapsulation, a second encapsulation and a transparent resin layer with phosphorous compounds doped therein. The first encapsulation defines a receiving room for receiving the LED chip therein. The second encapsulation defines a receiving space for receiving the first encapsulation therein. The second encapsulation is separated from the first encapsulation to define a clearance between the first encapsulation and the second encapsulation. The transparent resin layer is filled in the clearance. The transparent resin layer has a uniform thickness. | 04-26-2012 |
| 20120098004 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a substrate, an LED die and an encapsulation. The substrate includes a supporting surface and a protrusion extending from the supporting surface along a first direction. The protrusion includes a distal end portion extending along a second direction. The first direction and the second direction define a non-zero angle there between. The LED die is arranged on the supporting surface of the substrate. The encapsulation lies on the supporting surface and covers the LED die and the protrusion to increase a bonding connection between the encapsulation and the substrate. | 04-26-2012 |
| 20120098003 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode (LED) package includes a substrate, an LED chip mounted on the substrate, and a wire. The LED chip includes a semiconductor structure and an electrode disposed on the semiconductor structure. The wire electrically connects the electrode of the LED chip to an electrical portion of the substrate. The wire has a first joint and a second joint connected to the substrate. The wire forms a first curved portion between the electrode and the first joint and a second curved portion between the first joint and the second joint. | 04-26-2012 |
| 20120097976 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region. | 04-26-2012 |
| 20120097969 | LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor layer and the p-type semiconductor layer. A second electrode is electrically connected with the other one of the n-type semiconductor layer and the p-type semiconductor layer. A bonding pad is formed on a top surface of the first electrode. A bonding wire is secured to the bonding pad. A ratio between a contacting area between the bonding pad and the top surface of the first electrode and an area of the top surface of the first electrode is no less than 6:10. | 04-26-2012 |
| 20120094405 | METHOD FOR MANUFACTURING LED PACKAGE - A method for manufacturing an LED package includes following steps: providing a substrate, wherein the substrate includes a plurality of package carriers and each package carrier includes two lead frames. Each package carrier includes a first surface and a recession surrounded by a bottom wall and a sidewall is defined on the first surface. Mount an LED chip on the bottom wall and electrical connecting the LED chip and the two lead frames, form an encapsulation in the recession; form a hydrophobic layer on the package carrier and the encapsulation; cut the substrate into a plurality of LED package structure. | 04-19-2012 |
| 20120094404 | METHOD FOR DISTRIBUTING FLUORESCENCE ONTO LED CHIP - A method for distributing fluorescence onto a light emitting diode chip includes steps: providing a base; mounting the LED chip having a light-emergent face on the base; disposing a baffle sleeve on the base whereby the baffle sleeve surrounds the LED chip; disposing a solid fusible block with the fluorescence mixed therein on the LED chip; heating the solid fusible block to be in a liquid state, and the fusible block flowing over the light-emergent face of the LED chip; and cooling the fusible block to be in a solid state again. | 04-19-2012 |
| 20120092861 | PLANAR LIGHT SOURCE APPARATUS HAVING REFLECTIVE SURFACES - A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements. | 04-19-2012 |
| 20120091487 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package comprises a substrate and a lens. The substrate comprises two electrodes and a LED chip disposed thereon, wherein the LED chip electrically connects to one of the electrodes via a conductive wire. The connection between the conductive wire and the corresponding electrode is covered by an encapsulation. The lens is located on the substrate and covers the encapsulation. Moreover, the substrate comprises at least two tunnels inside the covering of the lens penetrating the substrate. A collector is located between the substrate and the lens, wherein a transparent layer is formed inside the collector by injecting fluid material through the tunnels or directly injecting fluid material into the collector. A method for manufacturing the light emitting diode package is also provided. | 04-19-2012 |
| 20120091485 | LIGHT EMITTING DEVICE - A light emitting diode device comprises a light source and a gas vent device. The gas vent device comprises a base having a collector, wherein a conversion element is located inside the collector. A portion of heat generated from the light source is transferred into thermal energy to gasify the conversion element and the other portion is dissipated via the gas vent device. Therefore, the light emitting device is able to provide illuminant and gasify the conversion element simultaneously. | 04-19-2012 |
| 20120086032 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE HAVING LOW THERMAL STRESS - A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer. | 04-12-2012 |
| 20120086031 | LED PACKAGE, AND MOLD AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package. | 04-12-2012 |
| 20120080715 | SEMICONDUCTOR DEVICE - A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer. | 04-05-2012 |
| 20120080700 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package comprises a substrate, a light emitting diode chip, an encapsulating layer and a transparent surrounding layer. The surrounding layer is disposed on the substrate and encompasses the encapsulating layer, wherein the hardness of the surrounding layer is greater than the encapsulating layer. A method for manufacturing the light emitting diode package is also provided. | 04-05-2012 |
| 20120080696 | LIGHT EMITTING DIODE MODULE - An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of the lighting sources connects with the second lead frame of an adjacent lighting source electrically and mechanically. | 04-05-2012 |
| 20120080691 | LIGHT EMITTING DIODE AND MAKING METHOD THEREOF - An LED includes a substrate, a first P-type semiconductor layer formed on the substrate and a plurality of LED dies arranged on the first P-type semiconductor layer. The LED dies are electrically connected to each other in series. The present invention also relates to a method for making such an LED. | 04-05-2012 |
| 20120077295 | METHOD FOR DICING LED WAFER INTO MULTIPLE LED CHIPS - A method for dicing an LED (light emitting diode) wafer into multiple LED chips includes steps: providing an LED wafer, the LED wafer comprising a substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a transparent, electrically conductive film; forming a first channel in the LED wafer extending downwardly through the transparent, electrically conductive film, the second semiconductor layer and the light-emitting layer to the first semiconductor layer, thereby exposing the first semiconductor layer; forming a second channel within the first channel, the second channel extending downwardly through the first semiconductor layer to the substrate, thereby exposing a top face of the substrate; forming a groove in the top face of the substrate within the second channel by means of laser cutting; and dicing the LED wafer along the groove. | 03-29-2012 |
| 20120077292 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - An exemplary method of manufacturing an LED package includes providing a base, the base having a reflecting cup with a receiving recess defined therein; an LED chip is then mounted on the base and secured in a bottom of the receiving recess; thereafter, a dispensing nozzle is used to apply an encapsulating material into the receiving recess to encapsulate the LED chip; finally, the encapsulating material is baked to form an encapsulating layer. The dispensing nozzle moves relative to the receiving recess during the application of the encapsulating material. A depth of the receiving recess is varied. Parameters of the application of the encapsulating material into the receiving recess by the dispensing nozzle vary in response to a change of the depth of the receiving recess. | 03-29-2012 |
| 20120075882 | LIGHT EMITTING DIODE MODULE - An LED module includes an LED and a light-guiding board. The light-guiding board includes a light-incident face facing the LED, a light-emergent face, a light-reflecting face opposite to the light-emergent face, and a light-converting layer containing phosphors therein. Light emitted from the LED sequentially moves the light-incident face, the light-converting layer and the light-emergent face to leave the light-guiding board. The light-converting layer has a uniform thickness. | 03-29-2012 |
| 20120075858 | LED BULB - An exemplary LED bulb includes a holder, a housing, a heat spreader, a power module and an LED module. The housing connects to the holder. The heat spreader detachably engages with the housing. The power module detachably engages with the housing and is received in the housing. The LED module is arranged on the heat spreader. The LED module electrically connects to the holder via the power module. The LED module is physically separated from the power module. | 03-29-2012 |
| 20120074827 | LED LAMP STRUCTURE - An LED lamp structure includes a heat sink and a base. The heat sink includes a first receiving cavity, a second receiving cavity opposite to the first receiving cavity and a partition. A light board having LED modules is mounted on the partition. The partition defines two first threaded through holes therein. The base has two positioning protrusions engaging in two positioning grooves of the heat sink. Thus, second screw holes of two screw pillars of the base are aligned at the first screw holes of the partition of the heat sink. Screws are used to threadedly engage in the first screw holes, the second screw holes and third screw holes in the light board to thereby assemble the heat sink, the base and the light board together. | 03-29-2012 |
| 20120074531 | EPITAXY SUBSTRATE - An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth areas is less than ⅓ of a thickness H of the protected areas. | 03-29-2012 |
| 20120074452 | LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package includes a base, a light emitting element, a mask, metal wires, an encapsulating layer and a cover layer. The base has a first surface bearing electrical structure thereon and an opposite second surface. The mask is arranged on the first surface to define a space receiving the light emitting element. Two openings are defined in the mask. The light emitting element has two pads exposed to an outside through the two openings respectively. The metal wires electrically connect the pads and the electrical structures. The encapsulating layer is filled in the space and two through holes in the base and encapsulates the light emitting element. The encapsulating layer is separated from the metal wires. The cover layer covers and protects the mask and the metal wires. A method of manufacturing the package is also provided. | 03-29-2012 |
| 20120074444 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The disclosure provides a light emitting device comprising a light source and a reflector, having specular ink, surrounding the light source. | 03-29-2012 |
| 20120074437 | LED UNIT HAVING UNIFORM LIGHT EMISSION - An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The base includes a main body and a pair of steps. The leads each have two opposite ends protruding from two opposite ends of the main body and located below/above a corresponding step. The protruding ends of the leads of adjacent LEDs are connected to each other. The encapsulants of adjacent LEDs are continuously connected together. Light emitted from the chips of the LEDs are evenly distributed in the encapsulants whereby the light from the LEDs forms a rectangular, uniform light source. | 03-29-2012 |
| 20120074436 | LED UNIT HAVING SELF-CONNECTING LEADS - An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The base includes a main body and a pair of steps. The leads each have two opposite ends protruding from two opposite ends of the main body and located below/above a corresponding step. The protruding ends of the leads of each LED are connected to those of adjacent LEDs to electrically connect the LEDs in series or in parallel. | 03-29-2012 |
| 20120068216 | PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected with the electrode layers via two wires. A reflective cup is mounted on the ceramic substrate and defines a receiving space above the top of the ceramic substrate and the first packing layer. A second packing layer is received in the receiving space and covers the first packing layer. | 03-22-2012 |
| 20120061692 | LIGHT EMITTING DIODE PACKAGE HAVING INTERCONNECTION STRUCTURES - A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips. | 03-15-2012 |
| 20120056233 | LED PACKAGE - An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base. | 03-08-2012 |
| 20120043576 | LED PACKAGE STRUCTURE - An LED package structure includes a substrate with a concave groove therein, an LED die received in the concave groove, a heat conductive pillar, two electrically conductive pillars, a heat conductive plate, and two contact pads. The heat conductive pillar extends through the substrate and thermally connects with the LED die and the heat conductive plate. The electrically conductive pillars extend through substrate and electrically connect with the LED die, respectively. The electrically conductive pillars and the heat conductive pillar are spaced from each other. The contact pads respectively and electrically connect with the electrically conductive pillars. The contact pads are spaced from each other. | 02-23-2012 |
| 20120043523 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode. | 02-23-2012 |
| 20120037947 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode package comprises a substrate with a first surface and a second surface opposite to each other, a circuit on the substrate, a support on the substrate for reinforcing strength of the substrate, a plurality of light emitting diodes on the substrate and electrically connected to the circuit, and a cover layer on the plurality of light emitting diodes. A method for manufacturing a light-emitting diode package is further provided. | 02-16-2012 |
| 20120034716 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing a light emitting diode includes steps: providing a base having leads formed thereon; fixing a light emitting die on the leads; disposing a glass encapsulant on the base; co-firing the encapsulant with the base to fix them together. The base is made of silicon or ceramic. The encapsulant has a cover covering the light emitting die received in a groove of the base and a positioning plate fittingly engaging into the groove in one embodiment. The encapsulant has a cavity receiving the light emitting die to cover the light emitting die fixed on a top face of the base in another embodiment. Various mechanisms are used to protect the light emitting die during co-firing of the encapsulant and the base. | 02-09-2012 |
| 20120032192 | LIGHT EMITTING DIODE - A light emitting diode includes a first illumination region, a second illumination region, and the third illumination, wherein a first fluorescent conversion layer and a second fluorescent conversion layer cover the first illumination region and the second illumination region, respectively. The fluorescent conversion layers can convert lights from the illumination regions to other lights with different wavelengths whereby the light emitting diode generates light with multiple wavelengths. | 02-09-2012 |
| 20120025258 | LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE - An exemplary LED module includes a board and an LED package mounted on the plate. The LED package includes a base, an LED chip mounted on a top surface of the base, two electrodes formed on the base and electrically connected to the LED chip and the board, and an encapsulant encapsulating the LED chip. A plurality of grooves are defined in the bottom surface of the base. When the LED package is secured on the plate via solder paste, the grooves function as a container for receiving excessive solder paste, thereby preventing the solder paste from spilling and floating or inclination of the LED package. | 02-02-2012 |
| 20120025243 | LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip. | 02-02-2012 |
| 20120025240 | PACKAGE OF LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a package of light emitting device includes the following steps: providing a light emitting element and positioning the light emitting element at a bottom of a reflecting cup; providing phosphors and a compound of epoxy resin and silicone, and mixing the phosphors and the compound of epoxy resin and silicone to obtain a mixture by a process of kneading; and encapsulating the light emitting element with the mixture to form an encapsulant received in the reflecting cup. | 02-02-2012 |
| 20120025238 | LED PACKAGE - An LED package comprises a substrate, an LED die, and an encapsulating layer. The substrate has circuit formed thereon. The LED die is arranged on the substrate and electrically connected to the circuit of the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer and the substrate are made of cycloaliphatic epoxide. | 02-02-2012 |
| 20120025215 | SEMICONDUCTOR PACKAGE WITH HEAT DISSIPATING STRUCTURE - A semiconductor package includes a substrate, a number of electrodes formed in the substrate, a heat dissipating member fixed on the substrate, and at least one semiconductor chip mounted on the heat dissipating member and electrically connected to the electrodes. The heat dissipating member defines a receiving through hole and includes a conducting portion formed at the bottom of the receiving through hole. The at least one semiconductor chip is mounted on the conducting portion. The conducting portion efficiently conducts the heat generated by the semiconductor chip to the heat dissipating member and improves the heat dissipating efficiency of the semiconductor package. | 02-02-2012 |
| 20120021545 | METHOD OF MANUFACTURING VERTICAL LIGHT EMITTING DIODE - A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the first substrate; depositing an epitaxial layer on the lapping stop layer; bonding a second substrate on the epitaxial layer; and removing the first substrate from the lapping stop layer. | 01-26-2012 |
| 20120021542 | METHOD OF PACKAGING LIGHT EMITTING DEVICE - A method of packaging a light emitting device includes the following steps: providing a base; forming a mask on the base, the mask defining a plurality of holes therein; positioning a certain amount of glue in each of the holes; securing a film on the mask, a plurality of light emitting elements being positioned on the film, and each of the light emitting elements being positioned in a corresponding hole and adhered by the glue in the corresponding hole; separating the light emitting elements from the film and removing the film from the mask; and removing the mask from the base. | 01-26-2012 |
| 20120021541 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flipchip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process. | 01-26-2012 |
| 20120020089 | LIGHT EMITTING DIODE LIGHT BAR - An LED light bar includes an elongated circuit board, a first lighting module formed in the middle of the circuit board and two second light modules formed at two opposite ends of the circuit board. Each of first lighting module and the two second lighting module includes a plurality of LEDs arranged linearly on a surface of the circuit board. A density of the LEDs in the first lighting module is smaller than that in the second lighting modules. | 01-26-2012 |
| 20120018847 | GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. | 01-26-2012 |
| 20120012873 | LIGHT EMITTING DIODE PACKAGE FOR MICROMINIATURIZATION - A light emitting diode package includes a metal thin film with a first surface and a second surface opposite to the first surface. The metal thin film further defines a first part and a second part electrically insulated from the first part. A light emitting diode die is formed on the first part of the metal thin film. The light emitting diode die includes a first electrode and a second electrode. The light emitting diode die is sealed within a glass encapsulation and the second surface of the metal thin film is exposed to the outside of the glass encapsulation for electrically connecting with an external power. | 01-19-2012 |
| 20120012872 | LED PACKAGE STRUCTURE - An LED package structure includes a transparent substrate having a supporting face and a light-emergent face opposite to the supporting face, a housing disposed on the supporting face, two electrodes disposed on the housing, an LED chip disposed on the supporting face and electrically connected to the two electrodes, a reflecting layer covering the LED chip to reflect light emitted by the LED chip toward the transparent substrate, and a phosphor layer formed on the light-emergent face of the substrate. The phosphor layer includes a plurality of layers each having a specific light wavelength conversion range to generate a light with a predetermined color. | 01-19-2012 |
| 20120001303 | SEMICONDUCTOR STRUCTURE HAVING LOW THERMAL STRESS AND METHOD FOR MANUFACTURING THEREOF - A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed. | 01-05-2012 |
| 20110316024 | LED PACKAGE - An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer. | 12-29-2011 |
| 20110297981 | FLUORESCENT STRUCTURE AND METHOD FOR FORMING THE FLUORESCENT STRUCTURE AND LED PACKAGE USING THE SAME - A fluorescent structure for a light-emitting package includes a first fluorescent layer and a second fluorescent layer covering the first fluorescent layer. The first fluorescent layer includes first fluorescent strips, and defines first transparent regions between the first fluorescent strips. The second fluorescent layer includes second fluorescent strips, and defines second transparent regions between the second fluorescent strips. A method for forming the fluorescent structure and a light-emitting diode package using the fluorescent structure are also provided. | 12-08-2011 |
| 20110291138 | LIGHT-EMITTING ELEMENT PACKAGE AND FABRICATION METHOD THEREOF - A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of photonic crystals. | 12-01-2011 |
| 20110291136 | LIGHT-EMITTING ELEMENT AND FABRICATION METHOD THEREOF - A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough. | 12-01-2011 |
| 20110291135 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a silicon substrate having a first surface and a second surface opposite to the first surface, wherein the first surface includes a cavity, a light emitting diode chip fixed on a bottom of the cavity, and a glass lens secured to the silicon substrate and covering the light emitting diode chip. | 12-01-2011 |
| 20110291121 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate. | 12-01-2011 |
| 20110278631 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) chip includes a first electrode and a second electrode. Each of the first and second electrodes includes several trunks with at least one branch extending from at least one of the trunk, and at least one conductive pad serially connecting the trunks. A distance between a distal end of the branch of the first electrode and the conductive pad of the second electrode is less than that between any of other portions of the branch of the first electrode and the conductive pad of the second electrode, to thereby avoid crowded electric current formed at the first electrode and the conductive pad of the second electrode to save power accordingly. | 11-17-2011 |
| 20110278613 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, a buffer layer on the substrate, a patterned layer having a first reflective index on the buffer layer, a semiconductor layer having a second reflective index on the patterned layer, and an illumination structure on the semiconductor layer. A method for manufacturing the light emitting diode is also provided. | 11-17-2011 |
| 20110278601 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a silicon base, an LED and a glass encapsulant. The silicon base has a first surface and a second surface opposite to the first surface. The LED chip is located on the first surface of the silicon base. The glass encapsulant covers the LED chip. The glass encapsulant and the silicon base define a receiving space therebetween to receive the LED chip. The glass encapsulant is fixedly engaged with the first surface of the silicon base, so the glass encapsulant and the silicon base enclose the LED chip. | 11-17-2011 |
| 20110272666 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure. | 11-10-2011 |
| 20110266586 | LED PACKAGE AND MANUFACTURING METHOD THEREOF - An LED package includes a base, an LED chip, and an encapsulant. The LED chip is mounted on the base, and is enclosed by the encapsulant. The base includes a substrate and a blocking wall integrally formed with the substrate. The blocking wall divides a surface of the substrate into a first bonding area and a second bonding area. An electrically conductive layer and a solder are formed on the bonding area in sequence. The blocking wall can block the first and second solder to overflow outside the first and second bonding area at soldering respectively. A method for manufacturing the LED package is also provided. | 11-03-2011 |
| 20110266574 | LED PACKAGE - An LED package includes a substrate, an LED die, and an encapsulating layer. The LED die is arranged on the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer includes a light dispersing element. A light scattering intensity of the light dispersing element is proportional to the light intensity of light generated by the LED die and illuminated at the encapsulating layer. A luminance at a center of the LED package is substantially identical to that at a circumference of the LED package. | 11-03-2011 |
| 20110266570 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - In a light emitting device package and manufacturing method thereof, a multi-layer structure is allocated upon a substrate, of which at least two films with different refractive indices are alternately stacked together. | 11-03-2011 |
| 20110266552 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween. | 11-03-2011 |
| 20110261562 | TRAFFIC LIGHT - A traffic light assembly includes at least one light module, at least one lens located in front of the at least one light module, a transparent housing located in front of the at least one lens, and a cleaning device. The cleaning device includes a wiper located on an outer surface of the transparent housing, and a driver which drives the wiper to brush the transparent housing. | 10-27-2011 |
| 20110256646 | METHOD FOR MANUFACTURING LED PACKAGE AND SUBSTRATE THEREOF - In a method for manufacturing a LED package, a substrate of the LED package is formed by thermally pressing at least one insulating plate over an electrode plate and then grinding the insulating plates to expose the electrode plate. | 10-20-2011 |
| 20110256643 | METHOD FOR DETACHING LAYERS WITH LOW MAGNETIC PERMEABILITY - A method for detaching a first material layer from a second material layer includes following steps: forming a high-magnetic-permeability material layer on a first material layer comprised of low-magnetic-permeability material; removing a portion of the high-magnetic-permeability material layer to expose a portion of the first material layer; epitaxially growing a second material layer comprised of low-magnetic-permeability material on the exposed portion of the first material layer and the high-magnetic-permeability material layer; cooling the first and second material layers; heating the high-magnetic-permeability material layer, thus detaching the first material layer from the second material layer. | 10-20-2011 |
| 20110233564 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED chip includes a transparent substrate and a number of lighting structure units each including a p-type semiconductor and an n-type semiconductor and a recess extending from the p-type semiconductor to the n-type semiconductor. The recess is filled with metal material which covers the surface of the lighting structure units. By filling the recess with metal material, the heat generated by the lighting structure units can rapidly transfer to the metal material. A method for manufacturing the light emitting diode chip is also provided. | 09-29-2011 |
| 20110215365 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a package substrate, at least one light emitting element, a first encapsulation layer and a second encapsulation layer. The at least one light emitting element is mounted on the package substrate. The first encapsulation layer is mounted on the package substrate for encapsulation the at least one light emitting element. The second encapsulation layer is configured for encapsulation a back side of the at least one light emitting element. | 09-08-2011 |
| 20110210356 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a substrate, a reflection layer, at least one light emitting element, at least two conductive layers, a plurality of metal pins and an encapsulation layer. The reflection layer is formed on the substrate. The at least one light emitting element is mounted on the reflection layer on the substrate. The at least two conductive layers are electrically coupled to the at least one light emitting element. The metal pins electrically couple to the at least two conductive layers. The encapsulation layer is mounted on the substrate for encapsulating the at least one light emitting element. | 09-01-2011 |
| 20110210312 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 09-01-2011 |
| 20110206079 | SIDE EMITTING SEMICONDUCTOR PACKAGE - A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides. | 08-25-2011 |
| 20110193110 | LIGHT EMITTING DIODE ILLUMINATING APPARATUS WITH SAME-TYPE LIGHT EMITTING DIODES - A light emitting diode illuminating apparatus includes a substrate, a first lighting element and a second lighting element. The first and second lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating the first LED chip. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The second filling layer includes two different phosphor materials respectively doped therein. The first LED chip and the second LED chip are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitted from the first filling layer and the second filling layer is capable of mixing to produce light of a uniform color. | 08-11-2011 |
| 20110186975 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a substrate with a first surface and an opposite second surface, a plurality of metal rods throughout the first surface and the second surface of the substrate, a reflector surrounding the first surface of the substrate to form a functional area, a glass reflection layer covering the surfaces of reflector and the functional area and exposing a part of a first electrode area and a part of a second electrode area, at least one semiconductor chip adhered on the functional area, and a transparent gel covering the at least one semiconductor chip. | 08-04-2011 |
| 20110186891 | SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2. | 08-04-2011 |
| 20110186888 | SEMICONDUCTOR LIGHTING MODULE PACKAGE - A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors. | 08-04-2011 |
| 20110186856 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting element includes providing a substrate, forming a buffer layer on the substrate, forming a GaN layer on the buffer layer, forming a rough layer on the GaN layer at low temperature, and forming an epitaxial layer on the rough layer, wherein a refraction index of the epitaxial layer exceeds a refraction index of the rough layer. Thus, most light scatters at the rough layer, and then emits upwardly to a light emitting surface, enhancing light extraction efficiency thereof. An epitaxial process of the method is processed in situ in an MOCVD reactor. | 08-04-2011 |
| 20110181182 | TOP VIEW LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF - A top view light emitting device package and fabrication method thereof include a bilateral circuit is provided for emitting two far light fields with no requirement for multiple devices. Moreover, the top view light emitting device package of the disclosure also provides depressions and reflectors formed on the surfaces of the silicon substrate to enhance the reflective efficiency and fix a specific light field. | 07-28-2011 |
| 20110169034 | PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure includes a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and an opposite second surface. The first surface has a reflective opening, and the second surface has two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recess. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the second insulating layer. The second conductive layer is disposed on the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer. | 07-14-2011 |
| 20110163295 | SEMICONDUCTOR WITH LOW DISLOCATION - A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer. | 07-07-2011 |
| 20110156085 | SEMICONDUCTOR PACKAGE - A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire electrically connects the chip to the lead frames. An encapsulation covers the lead frames, the heat dissipation plate, the semiconductor chip, and the conductive wires, while the bottom surface of the heat dissipation plate and the extending portions of the lead frames are exposed. | 06-30-2011 |
| 20110114983 | PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR - A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer. | 05-19-2011 |
| 20110108871 | EDGE LED PACKAGE - An edge LED package includes a base, an LED die and a reflective cup. The LED die is located on a surface of the base. The reflective cup includes an inner sidewall surrounding the LED die. The inner sidewall inclines outward from the base to form an included angle from 140 to 150°. The depth of the reflective cup, measured vertically from top of the reflective cup to the bottom, is about 0.25 mm to 0.3 mm. The area ratio between the opening area of the reflective cup and the base area surrounded by the reflective cup is about 1.5 to 2. | 05-12-2011 |
| 20110101408 | LED DIE HAVING HEAT DISSIPATION LAYERS - An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode. | 05-05-2011 |
| 20110095316 | LED PACKAGE STRUCTURE - An LED package structure includes an LED die, a lead frame and a housing connecting to the lead frame. The LED die is located on a surface of the lead frame. The housing includes an inner face surrounding the LED die. The inner face has a bottom edge connected to the surface of the lead frame, a top edge and a waist line between the bottom edge and top edge. The bottom edge surrounds an area less than an area surrounded by the waist line. The area surrounded by the waist line is less than an area surrounded by the top edge. The inner face has a curved surface between the waist line and the bottom edge. | 04-28-2011 |
| 20110089464 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die. | 04-21-2011 |
| 20110073872 | HIGH BRIGHTNESS LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A high brightness light emitting diode includes a carrier substrate and an epitaxial multi-layer formed thereon. The carrier substrate includes a metal material and a medium, and a coefficient of thermal expansion (CTE) of the medium is less than a CTE of the metal material. | 03-31-2011 |
| 20110068358 | PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A method for fabricating a photoelectric device initially provides a ceramic substrate comprising a thermal dissipation layer on a bottom layer of the ceramic substrate, an electrode layer on the top surface of the ceramic substrate, and a reflective structure in cavities of the ceramic substrate. Next, a plurality of photoelectric dies is disposed on the top surface of the ceramic substrate. Then, a first packaging layer is formed on the top surfaces of the photoelectric dies. Next, the ceramic substrate is placed between an upper mold and a lower mold. Finally, a plurality of lenses is formed on the top surface of the first packaging layer by using an injection molding technique or a transfer molding technique. | 03-24-2011 |
| 20110062871 | AC-LED PROTECTION CIRCUIT - An AC-LED protection circuit comprises an AC-LED with a first terminal and a second terminal, and a circuit protection unit electrically connects with the first and second terminals of the AC-LED. When a voltage between two terminals of the circuit protection unit exceeds a voltage threshold, the circuit protection unit substantially forms a short circuit. Also, when a current through the circuit protection units exceeds a current threshold, the circuit protection unit forms a substantial open circuit. | 03-17-2011 |
| 20110062474 | LIGHT-EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF - A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the light-emitting diode die, and configured to direct light from the light-emitting die in a predetermined direction. The lens is directly molded within the reflector, covering the fluorescent layer. | 03-17-2011 |
| 20110045609 | METHOD FOR DETACHING LAYERS WITH LOW MAGNETIC PERMEABILITY - A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer. | 02-24-2011 |
| 20110031513 | WATERPROOF SMD LED MODULE AND METHOD OF MANUFACTURING THE SAME - A surface-mount device (SMD) light emitting diode (LED) module includes a leadframe, an LED chip, a waterproof protective film and a sealing material. The leadframe includes a plurality of leads and the LED chip is fixed on one of the leads. The waterproof protective film covers the LED chip and a portion of the leadframe, and exposes a portion of the leadframe for connecting to a circuit board. The sealing material is also formed on the leadframe to cover the LED chip. In addition, a method of manufacturing the SMD LED module is provided. | 02-10-2011 |
| 20110012155 | Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof - A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure. | 01-20-2011 |
| 20100304535 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film. | 12-02-2010 |
| 20100295084 | Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 11-25-2010 |
| 20100271845 | SIDE LIGHT TYPE BACKLIGHT MODULE WITH BACK PLATE ASSEMBLY - A back plate assembly utilized in a side light type backlight module includes two cases each including a main plate, a side plate extending upwardly extending from an end of the main plate and a pressing plate inwardly extending from a free end of the side plate. An opposite end of the main plate of one of the cases has a first stepped portion extending inwardly from a top portion thereof, and an opposite end of the main plate of the other one of the cases has a second stepped portion extending inwardly from a bottom portion thereof. A plurality of bolts extend through the second and first stepped portions and secure the cases together. A space is defined between the first and second cases for receiving a light guiding plate and a reflection plate between the main plates and the light guiding plate. | 10-28-2010 |
| 20100271807 | BACKLIGHT MODULE - An exemplary illuminating apparatus includes a light guiding plate, a light source facing a light input surface of the light guiding plate, and a complementary color element adjacent to the light source. The light source comprises a number of LEDs which emit light with at least two wavelengths. The at least two wavelengths light mix with each other to gain a white light. The complementary color element is configured for receiving light emitted from adjacent, outmost LED and converting the light into white light. The white light is reflected by the complementary color element and emits from the light guiding plate through the light output surface. | 10-28-2010 |
| 20100261300 | METHOD FOR SEPARATING SUBSTRATE FROM SEMICONDUCTOR LAYER - A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes. | 10-14-2010 |
