Advanced Micro-Fabrication Equipment Inc., Shanghai Patent applications |
Patent application number | Title | Published |
20140120731 | ICP SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT - An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas. | 05-01-2014 |
20140120312 | COATING PACKAGED CHAMBER PARTS FOR SEMICONDUCTOR PLASMA APPARATUS - An advanced coating for parts used in plasma processing chamber. The advanced coating is formed over an anodized surface that has not been sealed. After the coating is formed, the coated area is masked, and the remaining anodized surface is sealed. The porous and rough structure of the anodized but un-sealed aluminum enhances adhesion of the coating. However, to prevent particle generation, the exposed anodized surface is sealed after formation of the coating. The coating can be of yttria, formed by plasma enhanced atomic deposition techniques which results in a dense and smooth coating. | 05-01-2014 |
20140118880 | PERFORMANCE ENHANCEMENT OF COATING PACKAGED ESC FOR SEMICONDUCTOR APPARATUS - An advanced coating for electrostatic chuck used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating is generally of Y | 05-01-2014 |
20140117120 | COATING PACKAGED SHOWERHEAD PERFORMANCE ENHANCEMENT FOR SEMICONDUCTOR APPARATUS - An advanced coating for showerhead used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating formation involved a physical process, such as condensation of source material on the showerhead surface, and chemical process, wherein active species from plasma interact with the condensed source materials. Also, non-reactive species from the plasma impinge on the bottom surface to condense the formed coating. | 05-01-2014 |
20140116338 | COATING FOR PERFORMANCE ENHANCEMENT OF SEMICONDUCTOR APPARATUS - A plasma processing chamber having advanced coating for the showerhead and for an extended bottom electrode. The extended bottom electrode can be formed by one or more of the focus ring, cover ring, and plasma confinement ring. The extended electrode can be formed using a one-piece composite cover ring. The composite cover ring may be made of Al | 05-01-2014 |
20140106572 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE - A plasma processing method for a plasma processing device is provided. The plasma processing device includes a reaction chamber, multiple Radio Frequency (RF) power supplies with different RF frequency outputs apply RF electric fields to the reaction chamber, the output of at least one pulse RF power supply has multiple output states, and the processing method includes a match frequency obtaining step and a pulse processing step. In the match frequency obtaining step, the output state of the pulse RF power supply is switched to make the reaction chamber have multiple impedances to simulate the impedances in the pulse processing step. The output frequencies of the variable frequency RF power supply are adjusted to match the simulated impedances. The adjusted output frequencies are stored as match frequencies. In the subsequent pulse processing step, the fast switched impedances are instantly matched by the stored match frequencies. | 04-17-2014 |
20140083453 | METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER - A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber is provided in embodiments of the present invention. The method includes: introducing a first cleaning gas into the reaction chamber, converting the first cleaning gas into first plasma inside the reaction chamber to completely remove a carbonaceous organic substance inside the reaction chamber, wherein the first cleaning gas includes a first oxygen-containing gas; and introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber to completely remove a metallic oxide inside the reaction chamber, wherein the second cleaning gas includes a first halogen-containing gas. | 03-27-2014 |
20140083452 | METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER - The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: maintaining the internal pressure of the MOCVD reaction chamber in a predetermined pressure range, and keeping a plasma inside the MOCVD reaction chamber for a predetermined time period to completely remove deposits inside the MOCVD reaction chamber. The method for in situ cleaning of an MOCVD reaction chamber according to the embodiments of the present invention may remove relatively stable organic ligands or related polymers, resulting in a good cleaning effect for the removal of the deposits on the surfaces with a relatively low temperature inside the MOCVD reaction chamber. | 03-27-2014 |
20140083451 | METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER - The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: introducing a first cleaning gas into the reaction chamber, and converting the first cleaning gas into a first plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a first predetermined pressure range for a first time period, to remove a carbonaceous organic substance inside the reaction chamber; introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a second predetermined pressure range for a second time period, to remove metal and its compound inside the reaction chamber. | 03-27-2014 |
20130292370 | METHOD AND DEVICE FOR MEASURING TEMPERATURE OF SUBSTRATE IN VACUUM PROCESSING APPARATUS - A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(λ | 11-07-2013 |
20130062311 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE WITH THE SAME - The invention relates to an inductively-coupled plasma processing apparatus and a method for processing a substrate. By arranging a magnetic field line adjusting component made of magnetic conductive material, a quasi-closed low reluctance path is formed to serve as the path of the magnetic field line loop outside of the reaction chamber, and the path of most magnetic field lines of the induced magnetic field is constrained by the low reluctance path. In this way, most of magnetic field energy diverged previously may be gathered, and then the magnetic field is multiplied; alternatively, less energy is required to obtain the same magnetic field strength to generate plasma for performing etching, which improves utilization efficiency of energy source. | 03-14-2013 |
20120255486 | CLEANING APPARATUS AND METHOD, AND FILM GROWTH REACTION APPARATUS AND METHOD - Disclosed herein is an apparatus for cleaning an inner surface of a film growth reaction chamber, including a supporting unit, a cleaning unit, an electric motor and a power supply apparatus. The cleaning unit includes a surface facing the inner surface of the reaction chamber, and the surface is provided with a plurality of scraping structures. The electric motor is provided on the supporting unit and includes a driving shaft. One end of the driving shaft is connected to the cleaning unit so as to drive the cleaning unit to move. The power supply apparatus is connected to the electric motor. The cleaning apparatus of the present application provides a method for cleaning the inner surface of the reaction chamber, which is highly automatic, effective and timesaving, and may ensure the quality and consistency of cleaning process. | 10-11-2012 |