| Advanced Mask Technology Center GmbH Co. KG Patent applications |
| Patent application number | Title | Published |
|---|
| 20100104961 | Particle Beam Writing Method, Particle Beam Writing Apparatus and Maintenance Method for Same - A first exposure dose for a shot area based upon layout data is determined. A correction dose compensating a dose deviation between a first point in time, at which a control unit configured to control a shot time period of a particle beam writing apparatus considers a charged particle beam as having reached a nominal current density, and a second point in time, at which the charged particle beam has actually reached a nominal current density, at a target substrate is determined. | 04-29-2010 |
| 20080318139 | Mask Blank, Photomask and Method of Manufacturing a Photomask - Mask blanks of the invention include an absorber layer, an anti-reflective layer disposed over the absorber layer, and a hard mask layer disposed over the anti-reflective layer. The absorber layer is absorbent at an exposure wavelength and is reflective at an inspection wavelength. The inspection wavelength is greater than or equal to the exposure wavelength. The anti-reflective layer is not reflective at the inspection wavelength. None of the main constituents of the hard mask layer has an atomic number greater than 41. The mask blank may be a reflective EUVL mask blank or a transparent mask blank. | 12-25-2008 |
| 20080318138 | EUV Mask and Method for Repairing an EUV Mask - An EUV mask comprises a substrate, a reflective multilayer on the substrate, a phase-shifting material disposed above the multilayer in at least one first portion of the substrate, and a masking material disposed above the multilayer in second portions of the substrate and corresponding to mask patterns of an EUV mask. There is also provided a method for repairing an EUV mask including a substrate, a reflective multilayer on the substrate and at least one defect beneath or within the multilayer. The method includes the steps of determining the position of a defect area of the substrate, in which a phase-shift difference of an exposure radiation is caused by the defect, and depositing a phase-shifting material above the multilayer in at least one first portion of the substrate, the first portion at least partially comprising the defect area. | 12-25-2008 |
