| Advanced LCD Technologies Dev. Ctr., Co., Ltd Patent applications |
| Patent application number | Title | Published |
|---|
| 20100239782 | INSULATING FILM FORMING METHOD, INSULATING FILM FORMING APPARATUS, AND PLASMA FILM FORMING APPARATUS - An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel. | 09-23-2010 |
| 20090284839 | OPTICAL DEVICE AND CRYSTALLIZATION DEVICE - An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments. | 11-19-2009 |
| 20090194769 | CRYSTALLIZING METHOD, THIN-FILM TRANSISTOR MANUFACTURING METHOD, THIN-FILM TRANSISTOR, AND DISPLAY DEVICE - A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face. | 08-06-2009 |
| 20090038536 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, OPTICAL MODULATION ELEMENT, AND DISPLAY APPARATUS - A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution. | 02-12-2009 |
