FUJIMI INCORPORATED Patent applications |
Patent application number | Title | Published |
20160136784 | Polishing Composition and Polishing Method - A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as dicyandiamide, and an oxidant. The water-soluble polymer may be a water-soluble polymer including a constitutional unit originating from dicyandiamide and a constitutional unit originating from formaldehyde, a diamine or a polyamine. | 05-19-2016 |
20160122591 | SILICON WAFER POLISHING COMPOSITION - This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom. | 05-05-2016 |
20160108284 | POLISHING COMPOSITION - An object of the present invention is to provide a means for improving a polishing rate and polishing selectivity of a phase-change compound. | 04-21-2016 |
20160040278 | SLURRY FOR THERMAL SPRAYING, THERMAL SPRAYED COATING, AND METHOD FOR FORMING THERMAL SPRAYED COATING - A thermal spray slurry of the present invention contains ceramic particles having an average particle size of 200 nm or more and 5 μm or less. Precipitates formed when 700 mL of the thermal spray slurry is placed in a 16.5-cm-high cylindrical vessel having a volume of 1 L and is allowed to stand still at room temperature for 1 week are made to disappear by disposing, at a temperature of 20° C. or higher and 30° C. or lower, the cylindrical vessel so as for the central axis of the cylindrical vessel to be horizontal and by rotating the cylindrical vessel at a rotation speed of 100 rpm for 120 minutes around the central axis of the cylindrical vessel to stir the thermal spray slurry in the cylindrical vessel. | 02-11-2016 |
20160024328 | SLURRY FOR THERMAL SPRAYING, THERMAL SPRAY COATING, AND METHOD FOR FORMING THERMAL SPRAY COATING - A thermal spray slurry of the present invention contains ceramic particles in a content of 10% by mass or more and 85% by mass or less, and has a viscosity of 3,000 mPa·s or less. The ceramic particles have an average particle size of, for example, 1 nm or more and 5 μm or less. The thermal spray slurry may further contain a dispersant. The thermal spray slurry may further contain a viscosity modifier. The thermal spray slurry may further contain a flocculant. | 01-28-2016 |
20160016856 | POWDER FOR THERMAL SPRAYING, THERMAL SPRAYED COATING, AND METHOD FOR FORMING THERMAL SPRAYED COATING - A thermal spray powder of the present invention contains ceramic particles having an average particle size of 1 μm or more and 20 μm or less. The ceramic particles have a flowability index value FT of 3 or more measured by using a powder rheometer. The flowability index value FF is determined by measuring the maximum principal stress and the uniaxial collapse stress of the ceramic particles at normal temperature and normal humidity when 9 kPa of shear force is applied to the ceramic particles, and by dividing the measured maximum principal stress by the measured uniaxial collapse stress. | 01-21-2016 |
20160002500 | POLISHING COMPOSITION - Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. | 01-07-2016 |
20160001416 | POLISHING COMPOSITION AND METHOD FOR PRODUCING POLISHED ARTICLE - This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses. | 01-07-2016 |
20150376464 | POLISHING COMPOSITION, METHOD FOR PRODUCING POLISHING COMPOSITION AND METHOD FOR PRODUCING POLISHED ARTICLE - The present invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The polishing composition has a volume average particle diameter D | 12-31-2015 |
20150360340 | METHOD FOR POLISHING ALLOY MATERIAL AND METHOD FOR MANUFACTURING ALLOY MATERIAL - An alloy material polishing method of the present invention is a method for polishing an alloy material containing a main component and 0.5% by mass or more of an accessory component element having a Vickers hardness (HV) different from that of the main component by 5 or more. The polishing method is characterized by polishing a surface of the alloy material using a polishing composition containing abrasive grains and an oxoacid-based oxidizing agent. The main component of the alloy material is preferably at least one selected from aluminum, titanium, iron, nickel, and copper. The main component of the alloy material is preferably aluminum, and the accessory component element is preferably at least one selected from silicon, magnesium, iron, copper, and zinc. The polishing method preferably includes preliminarily polishing the alloy material using a preliminary polishing composition before the polishing of the alloy material using the polishing composition. | 12-17-2015 |
20150354058 | ARTICLE COMPRISING METAL OXIDE-CONTAINING COATING - Provided is an article having a novel surface with a texture different from conventional kinds. The article having a metal oxide-containing coating provided by the present invention comprises a substrate and a metal oxide-containing coating provided to the substrate surface. The metal oxide-containing coating has a Vickers hardness of 350 or higher, a surface roughness Ra of 300 nm or less, and a 20° gloss value of 50 or higher. | 12-10-2015 |
20150344738 | POLISHING COMPOSITION - [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate. | 12-03-2015 |
20150315418 | POLISHING COMPOSITION - [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang. | 11-05-2015 |
20150306727 | POLISHING METHOD AND HOLDER - A polishing method includes a polishing process of polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. During the polishing process, the object held on the holding fixture turns around with the surface to be polished of the object facing the polishing pad to change the orientation of the object. | 10-29-2015 |
20150291851 | POLISHING COMPOSITION - A polishing composition which is able to decrease a difference in polishing rate between the alloy material and the resin, and to polish both the alloy material and the resin at a high polishing rate when polishing a substrate which contains an alloy material and a resin on the surface and has a ratio of the alloy material area to the total polishing area in a specific range is provided. To provide the polishing composition used to polish a substrate which contains an alloy material and a resin on a surface thereof and has a ratio of an alloy material area to a total polishing area of from 60 to 95%, the polishing composition containing crystalline abrasive grains having a cumulative 50% particle size (D | 10-15-2015 |
20150291850 | POLISHING COMPOSITION - Provided is a polishing composition with which a high glossy surface is achieved by enhancing smoothness of a surface of an alloy material while maintaining a sufficiently high polishing speed for the alloy material. The present invention relates to a polishing composition used for an application of polishing an alloy material, which contains silica particles having a primary particle average aspect ratio of at least 1.10 and a pH controlling agent. | 10-15-2015 |
20150290760 | POLISHING COMPOSITION - To provide a polishing composition which can polish a polishing object composed of a hard brittle material having the Vickers hardness of greater than 1,500 HV at a high polishing rate under a condition of a high polishing load (polishing pressure) of 150 g/cm | 10-15-2015 |
20150287609 | POLISHING COMPOSITION - A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH. | 10-08-2015 |
20150251293 | POLISHING METHOD AND METHOD FOR PRODUCING ALLOY MATERIAL - The polishing method polishes an alloy material using a polishing pad and a polishing composition supplied to the polishing pad. The polishing composition contains an abrasive of silica or alumina, and a surface temperature of the polishing pad at the end of polishing is 20° C. or below. The method for producing an alloy material comprises a polishing step of polishing an alloy material using a polishing pad and a polishing composition supplied to the polishing pad. The polishing composition contains an abrasive of silica or alumina, and a surface temperature of the polishing pad at the end of polishing is 20° C. or below. | 09-10-2015 |
20150232705 | POLISHING COMPOSITION - To provide a polishing composition, in which a high polishing rate for a barrier layer and an insulation film can sufficiently be maintained, a polishing rate of a low dielectric material can sufficiently be suppressed, and aggregation of abrasive grains can be prevented. The invention is a polishing composition to be used for an application of polishing a polishing object having a barrier layer, a metal wiring layer, and an insulation film, comprising an oxidizing agent, and a nonionic compound having a weight average molecular weight of 1,000 or less. | 08-20-2015 |
20150218709 | POLISHING COMPOSITION - To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. | 08-06-2015 |
20150210892 | POLISHING COMPOSITION AND METHOD FOR PRODUCING SUBSTRATE - A polishing composition includes a water-soluble polymer having a weight average molecular weight of 1000000 or less and a molecular weight distribution represented by weight average molecular weight (Mw)/number average molecular weight (Mn) that is less than 5.0. The polishing composition is mainly used in an application for polishing a substrate, preferably in an application for performing final polishing on a substrate. | 07-30-2015 |
20150210891 | POLISHING COMPOSITION, METHOD FOR MANUFACTURING POLISHING COMPOSITION, AND METHOD FOR MANUFACTURING POLISHING COMPOSITION LIQUID CONCENTRATE - A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more. | 07-30-2015 |
20150152290 | POLISHING COMPOSITION - A polishing composition is used to polish a polishing subject having a phase change alloy. The polishing composition includes abrasive grains and a brittle film formation agent. The brittle film formation agent is at least one or more selected from a saturated monocarboxylic acid and an organophosphorus compound. | 06-04-2015 |
20150140906 | CLEANING AGENT FOR ALLOY MATERIAL, AND METHOD FOR PRODUCING ALLOY MATERIAL - A cleaning agent for an alloy material is provided. The cleaning agent has a pH in a range between 1.5 and 4, inclusive, and contains an anionic surfactant having an SO | 05-21-2015 |
20150132955 | POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SUBSTRATE - A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica. | 05-14-2015 |
20150111382 | POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION - Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water. | 04-23-2015 |
20150079789 | ABRASIVE COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A. | 03-19-2015 |
20150060400 | POLISHING COMPOSITION - The present invention provides a polishing composition that can suppress generation of bumps due to etching on a surface of an object to be polished having a germanium material-containing part during the polishing of the object. | 03-05-2015 |
20150050862 | POLISHING COMPOSITION AND METHOD USING SAID POLISHING COMPOSITION TO MANUFACTURE COMPOUND SEMICONDUCTOR SUBSTRATE - A polishing composition contains abrasive grains and water. 50% by mass or more of the abrasive grains consists of particles A having particle sizes between 40 nm and 80 nm inclusive, and 10% by mass or more of the abrasive grains consists of particles B having particle sizes between 150 nm and 300 nm inclusive. The polishing composition is used to polish a surface of a compound semiconductor substrate. | 02-19-2015 |
20150044872 | SiCN and SiN Polishing Slurries and Polishing Methods Using The Same - A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO | 02-12-2015 |
20140302752 | COMPOSITION FOR POLISHING PURPOSES, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SUBSTRATE - Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate. | 10-09-2014 |
20140263167 | POLISHING COMPOSITION AND POLISHING METHOD USING SAME, AND SUBSTRATE MANUFACTURING METHOD - Provided is a polishing composition to be used for polishing an object including a conductor layer and an electrically conductive material layer that is in contact with the conductor layer. In a state in which the positive electrode and the negative electrode of an electrometer are connected to the electrically conductive material layer and the conductor layer, respectively, in the polishing composition at ordinary temperature, the current flowing from the positive electrode to the negative electrode has a positive value or is zero when the electrically conductive material layer and the conductor layer are polished. The polishing composition preferably contains a nitrogen atom-containing compound, a sulfur atom-containing compound, or a phosphorus atom-containing compound as an additive to control the value of the current to positive or zero. | 09-18-2014 |
20140251950 | POLISHING COMPOSITION - A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing ammonium ions (NH | 09-11-2014 |
20140248776 | COMPOSITION FOR POLISHING COMPOUND SEMICONDUCTOR - Disclosed is a polishing composition that contains at least abrasive grains, an oxidizing agent having a redox potential equal to or greater than 1.8 V at a pH for application of polishing, and water. The abrasive grains are preferably composed of at least one substance selected from among silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, and silicon nitride. The oxidizing agent is preferably composed of at least one substance selected from among sodium persulfate, potassium persulfate, and ammonium persulfate. The polishing composition preferably has a pH equal to or less than 3. | 09-04-2014 |
20140234653 | THERMAL SPRAY POWDER AND FILM THAT CONTAIN RARE-EARTH ELEMENT, AND MEMBER PROVIDED WITH FILM - A thermal spray powder of the present invention contains a rare earth element and a group 2 element, which belongs to group 2 of the periodic table. The thermal spray powder, which contains a rare earth element and a group 2 element, is formed, for example, from a mixture of a rare earth element compound and a group 2 element compound or from a compound or solid solution containing a rare earth element and a group 2 element. The thermal spray powder may further contain a diluent element that is not a rare earth element or a group 2 element and is not oxygen, which is at least one element selected, for example, from titanium, zirconium, hafnium, vanadium, niobium, tantalum, zinc, boron, aluminum, gallium, silicon, molybdenum, tungsten, manganese, germanium, and phosphorus. | 08-21-2014 |
20140234634 | THERMAL SPRAY POWDER AND FILM THAT CONTAIN RARE-EARTH ELEMENT, AND MEMBER PROVIDED WITH FILM - A thermal spray powder of the present invention contains a rare earth element and a diluent element that is not a rare earth element or oxygen, which is at least one element selected, for example, from zinc, silicon, boron, phosphorus, titanium, calcium, strontium, and magnesium. A sintered body of a single oxide of the diluent element has an erosion rate under specific etching conditions that is no less than 5 times the erosion rate of an yttrium oxide sintered body under the same etching conditions. | 08-21-2014 |
20140141612 | POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below. | 05-22-2014 |
20140094033 | POLISHING COMPOSITION - A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm | 04-03-2014 |
20140051335 | ABRASIVE AND POLISHING COMPOSITION - Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m | 02-20-2014 |
20140014872 | POLISHING COMPOSITION AND POLISHING METHOD - Disclosed is a polishing composition containing a pH-lowering substance and a pH-buffering agent. The difference in absolute value between the pH of the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 g of the polishing composition and the pH of the polishing composition after leaving to stand for eight days therefrom is 0.5 or less. Also disclosed is another polishing composition containing a pH-lowering substance and a pH-controlling agent. In comparison to the amount of a basic substance in the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 ml of the polishing composition, the amount of a basic substance in the polishing composition after leaving to stand for eight days therefrom is increased by no less than 0.1 mM. | 01-16-2014 |
20130324015 | POLISHING COMPOSITION - Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m | 12-05-2013 |
20130302984 | POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD - Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications. | 11-14-2013 |
20130288573 | Polishing Composition and Polishing Method Using The Same - The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass. | 10-31-2013 |
20130260650 | COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME - Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. | 10-03-2013 |
20130205682 | POLISHING COMPOSITION - A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F≧350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater. | 08-15-2013 |
20130203254 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g·solid or greater. | 08-08-2013 |
20130199106 | POLISHING COMPOSITION - A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm. | 08-08-2013 |
20130183826 | COMPOSITION FOR POLISHING AND COMPOSITION FOR RINSING - A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass. | 07-18-2013 |
20130181159 | SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME - A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass. | 07-18-2013 |
20130146804 | POLISHING COMPOSITION AND POLISHING METHOD USING SAME - A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less. | 06-13-2013 |
20130139445 | LIQUID FILTRATION METHOD - Disclosed is a filtration method that extends filter life and achieves high filtration efficiency, and also abrasive slurry produced by the method. In this filtration method, a filter is decompression-treated in a solvent-filled sealed container before liquid is filtered by the filter, after which the filter is used for filtering. | 06-06-2013 |
20130134107 | FILTRATION METHOD FOR NON-DEAIRED LIQUID - Disclosed is a filtration method that extends filter life and achieves high filtration efficiency, and also abrasive slurry produced by the method. In this filtration method, deaired solvent is passed through a filter before a non-deaired liquid is filtered by the filter, after which the filter is used for filtering. | 05-30-2013 |
20130095250 | POWDER FOR THERMAL SPRAYING AND PROCESS FOR FORMATION OF SPRAYED COATING - A thermal spray powder, which includes granulated and sintered cermet particles that contain a metal having an indentation hardness of 500 to 5,000 N/mm | 04-18-2013 |
20130040461 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 02-14-2013 |
20130040065 | POWDER FOR THERMAL SPRAYING - Disclosed is a thermal spray powder of granulated and sintered cermet particles, which contains tungsten carbide or chromium carbide, and a silicon-containing iron-based alloy. The content of the alloy in the thermal spray powder is preferably 5 to 40% by mass. In this case, the alloy contains silicon in a content of 0.1 to 10% by mass. | 02-14-2013 |
20120153218 | POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. | 06-21-2012 |
20120142258 | Polishing Composition and Polishing Method Using The Same - A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide. | 06-07-2012 |
20120138851 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 06-07-2012 |
20120042807 | POWDER FOR THERMAL SPRAYING AND METHOD FOR FORMING THERMAL-SPRAY DEPOSIT - Disclosed is a thermal spray powder of granulated and sintered cermet particles. The granulated and sintered cermet particles have an average particle size of 5 to 25 μm. The particles have a compressive strength of 50 MPa or higher. The particles have a straight ratio of 0.25 or higher, the straight ratio being defined as a value resulting from dividing the maximum thickness of a thermal spray coating obtained, when 150 grams of the thermal spray powder is subjected to thermal spot spraying, by the length of the longest of line segments each of which has both ends thereof on a contour of the spray coating. The granulated and sintered cermet particles have an average aspect ratio of preferably 1.25 or lower. The thermal spray powder is preferably used in applications where a thermal spray coating is formed by high-velocity flame spraying or cold spraying. | 02-23-2012 |
20110250755 | METHOD OF POLISHING WAFER SURFACE ON WHICH COPPER AND SILICON ARE EXPOSED - A method of the present invention includes polishing a wafer having an exposed copper or copper alloy surface and an exposed silicon surface by using a polishing composition containing 0.02 to 0.6% by mass of hydrogen peroxide, preferably 0.05 to 0.2% by mass thereof. The polishing composition preferably further contains at least one of a complexing agent, an inorganic electrolyte, and abrasive grains such as colloidal silica. The polishing composition has a pH of preferably 9 or more, more preferably 10 or more. | 10-13-2011 |
20110223840 | Polishing Composition and Polishing Method Using The Same - A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished formed of a substrate material for optical devices, a substrate material for power devices, or a compound semiconductor material. The abrasive grains have a zeta potential satisfying the relationship X×Y≦0, where X [mV] represents the zeta potential of the abrasive grains measured in the polishing composition and Y [mV] represents the zeta potential of the object to be polished measured during polishing using the polishing composition. The abrasive grains are preferably of aluminum oxide, silicon oxide, zirconium oxide, diamond, or silicon carbide. The object to be polished is preferably of sapphire, gallium nitride, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide. | 09-15-2011 |
20110183581 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - There is provided a polishing composition, containing abrasive grains and an acid represented either by R | 07-28-2011 |
20110180511 | Polishing Composition and Polishing Method Using the Same - A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: | 07-28-2011 |
20110180483 | FILTRATION METHOD, METHOD FOR PURIFYING POLISHING COMPOSITION USING IT, METHOD FOR REGENERATING FILTER TO BE USED FOR FILTRATION, AND FILTER REGENERATING APPARATUS - According to the present invention, a filtration method capable of prolonging the life of a filter and regenerating it without impairing the efficiency can be provided. Further, a filter regenerating method and a regenerating apparatus, for efficiently regenerating a filter, are provided. The filtration method of the present invention is a method of subjecting a liquid to filtration by using a resin media filter, wherein ultrasonic waves at a frequency of at least 30 kHz are applied to the filter while the filtration is carried out, during the temporary stop of the filtration or after completion of the filtration. Efficient purification is possible by subjecting a polishing composition to filtration by such a filtration method. Further, the filter regenerating method of the present invention comprises applying ultrasonic waves at a frequency of at least 30 kHz to a used resin filter. | 07-28-2011 |
20110052870 | Method of Manufacturing Microstructure and Substrate Provided with the Microstructure - A method is provided for manufacturing a microstructure on a substrate in which the substrate has thereon linear and parallel atomic steps. The microstructure includes linear elements that extend along the atomic steps. The method includes a step for preparing a substrate having atomic steps on its surface and a step for applying linear elements onto the substrate. Each linear element is oriented to extend along one of the atomic steps, with the result that a microstructure in which the linear elements extend along the atomic steps is formed on the substrate. The substrate can be prepared by subjecting a silicon carbide substrate, a sapphire substrate, or a zinc oxide substrate to an ultrasmoothing process. As the linear elements, peptide fibers can be employed that are made up of peptide molecules that form β-sheet structures. | 03-03-2011 |
20100301014 | Polishing Composition and Polishing Method Using the Same - A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R | 12-02-2010 |
20100242374 | Polishing Composition and Polishing Method - In a polishing composition, the concentration of one of either sodium ions or acetate ions is 10 ppb or less, or the concentrations of sodium ions and acetate ions are 10 ppb or less. The polishing composition preferably contains a water soluble polymer such as hydroxyethylcellulose, an alkali such as ammonia, and abrasive grains such as colloidal silica. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in finish polishing of the surfaces of such wafers. | 09-30-2010 |
20100040536 | Method for producing boehmite particles and method for producing alumina particles - A method for producing boehmite particles includes subjecting powder of aluminum hydroxide to hydrothermal reaction together with a nucleation agent, thereby obtaining boehmite particles having an average primary particle size of 0.6 μm or less and including primary particles each having a hexahedral shape. A method for producing alumina particles includes: drying the boehmite particles produced by the above described method; calcining the boehmite particles, which have been dried, to obtain alumina particles; and disintegrating the obtained alumina particles. | 02-18-2010 |
20100038584 | Polishing Composition and Polishing Method Using the Same - A polishing composition for electrochemical mechanical polishing a surface of an object in which the polishing composition contains a phosphate electrolyte such as a potassium phosphate, a chelating agent such as a potassium citrate, a corrosion inhibitor such as benzotriazole, an oxidizing agent such as hydrogen peroxide, and a solvent such as water. The polishing composition preferably further contains abrasive particles such as colloidal silica particles. | 02-18-2010 |
20100003821 | WETTING AGENT FOR SEMICONDUCTORS, AND POLISHING COMPOSITION AND POLISHING METHOD EMPLOYING IT - To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. | 01-07-2010 |
20090179172 | POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. | 07-16-2009 |
20090173910 | POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. | 07-09-2009 |
20090156008 | Polishing Composition and Polishing Method Using The Same - A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of semiconductor substrates in a suitable manner. | 06-18-2009 |
20090137123 | Polishing Composition and Polishing Method - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 05-28-2009 |
20090127500 | POLISHING COMPOSITION - A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device. | 05-21-2009 |
20080305718 | Polishing Composition and Polishing Method - A first polishing composition includes abrasive grains and an iodine compound and has a pH of 6 or more. The first polishing composition can suitably polish the Si [0001] plane of a single crystal silicon carbide substrate. A second polishing composition includes an iodine compound and has a pH of 8 or less. The second polishing composition can suitably polish the C [000-1] plane of a single crystal silicon carbide substrate. A third polishing composition includes abrasive grains and an iodine compound and has a pH of 6 to 8, inclusive. The third polishing composition can suitably polish each of the Si [0001] and C [000-1] planes of a single crystal silicon carbide substrate. | 12-11-2008 |
20080289261 | POLISHING COMPOSITION AND POLISHING METHOD - To provide a polishing composition which is suitable particularly for an application to polish a wafer containing tungsten, and a polishing process employing such a polishing composition. | 11-27-2008 |
20080265205 | Polishing Composition - A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO | 10-30-2008 |
20080245185 | THERMAL SPRAY POWDER AND THERMAL SPRAY COATING - A thermal spray powder including cermet particles, each of which contains metal containing at least one selected from the group consisting of cobalt, chrome, and nickel, and tungsten carbide. The ratio of the summed weight of cermet particles having a particle size of 25 μm or more in the thermal spray powder with respect to the summed weight of the entire cermet particles in the thermal spray powder is 0.5 to 15%. A thermal spray coating formed from the thermal spray powder is suitable for the formation of a tungsten carbide-based cermet thermal spray coating for use in rolls such as corrugated rolls. | 10-09-2008 |
20080241522 | THERMAL SPRAYING POWDER, THERMAL SPRAY COATING, AND HEARTH ROLL - A thermal spraying powder contains 30 to 50% by mass of chromium carbide with the remainder being an alloy containing chromium, aluminum, yttrium, and at least one of cobalt and nickel. The thermal spraying powder has an average particle size of 20 to 60 μm. The thermal spraying powder may contain 20% by mass or less of yttrium oxide in place of a part of the alloy. A thermal spray coating obtained by thermal spraying of the thermal spraying powder, particularly, a thermal spray coating obtained by high-velocity flame spraying of the thermal spraying powder is suitable for the purpose of a hearth roll. | 10-02-2008 |
20080210665 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron. | 09-04-2008 |