Catalyst Semiconductor, Inc. Patent applications |
Patent application number | Title | Published |
20100045343 | Current Limited Voltage Supply - A current limited voltage supply including a transistor and a capacitor is provided for powering digital logic cells of an integrated circuit. The transistor is connected in a current mirror configuration, such that a constant reference current is mirrored through the transistor to create a first supply current. The transistor is coupled to the digital logic cells and the capacitor. The first supply current is used to charge the capacitor while the digital logic cells are not switching. While the digital logic cells are switching, the capacitor discharges to the digital logic cells, thereby providing the digital logic cells with sufficient energy to implement high-speed switching. The capacitor minimizes voltage fluctuations within in the current limited voltage supply, such that analog circuitry can be reliably powered from a different branch of the same current mirror circuit. | 02-25-2010 |
20090196105 | Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array - A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage V | 08-06-2009 |
20090135649 | Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array - A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage V | 05-28-2009 |
20090003074 | Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array - A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage V | 01-01-2009 |
20080291729 | Non-Volatile Memory With High Reliability - A non-volatile memory (NVM) system includes a set of NVM cells, each including: a NVM transistor; an access transistor coupling the NVM transistor to a corresponding bit line; and a source select transistor coupling the NVM transistor to a common source. The NVM cells are written by a two-phase operation that includes an erase phase and a program phase. A common set of bit line voltages are applied to the bit lines during both the erase and programming phases. The access transistors are turned on and the source select transistors are turned off during the erase and programming phases. A first control voltage is applied to the control gates of the NVM transistors during the erase phase, and a second control voltage is applied to the control gates of the NVM transistors during the program phase. Under these conditions, the average required number of Fowler-Nordheim tunneling operations is reduced. | 11-27-2008 |
20080242027 | Non-Volatile Memory Integrated Circuit - A nonvolatile memory integrated circuit arrayed in rows and columns is disclosed. Parallel lines of implant N-type regions are formed in a P-well of a semiconductor substrate, with lines of oxide material isolating each pair of the lines. Columns of memory cells straddle respective pairs of the implant region lines, with one line of the pair forming the source region and one line of the pair forming the drain region of each memory cell of the column. Each memory cell has a floating polysilicon storage gate. One of plural wordlines overlies each row of the memory cells. The portion of the wordline overlying each memory cells forms the control gate of the memory cell. Programming and erase operations occur by Fowler-Nordheim tunneling of electrons through a tunnel oxide layer between the floating gate and the source of the cell. | 10-02-2008 |
20080238513 | Hysteresis Circuit Without Static Quiescent Current - A hysteresis circuit including a comparator and capacitive voltage divider circuit. The capacitive voltage divider circuit includes a first capacitor coupled between an input terminal and a positive comparator input, a second capacitor coupled between ground and the positive comparator input, and a third capacitor coupled between the comparator output and positive comparator input. A reference voltage is applied to the negative comparator input. The comparator is powered by the input signal provided on the input terminal. When the voltage on the positive comparator input is less than the reference voltage, the third capacitor is effectively coupled in parallel with the first capacitor. When the voltage on the positive comparator input is greater than the reference voltage, the third capacitor is effectively coupled in parallel with the second capacitor. | 10-02-2008 |