FORCE MOS TECHNOLOGY CO. LTD. Patent applications |
Patent application number | Title | Published |
20160104702 | SUPER-JUNCTION TRENCH MOSFET INTEGRATED WITH EMBEDDED TRENCH SCHOTTKY RECTIFIER - A super-junction trench MOSFET integrated with embedded trench Schottky rectifier is disclosed for soft reverse recovery operation. The embedded trench Schottky rectifier can be integrated in a same unit cell with the super-junction trench MOSFET. | 04-14-2016 |
20150221733 | TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING THREE MASKS PROCESS - A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein source regions are formed by performing source Ion Implantation through contact holes of a contact interlayer in the middle of adjacent terrace trenched gates, and further source diffusion. Both the contact holes and source regions are self-aligned to the terrace trenched gates. | 08-06-2015 |
20150076594 | SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N EPITAXIAL LAYER IN DEEP TRENCH - A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The inventive super junction can be used for MOSFET and Schottky rectifier. | 03-19-2015 |
20140346593 | SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS - A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough. | 11-27-2014 |
20140291753 | TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVING AND ON-RESISTANCE REDUCTION - A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein the source region is formed by performing source Ion Implantation through contact opening of a contact interlayer, and further source diffusion. A dielectric sidewall spacer is formed on sidewalls of the contact interlayer in the contact open areas to define trenched source-body contacts for on-resistance reduction and avalanche capability improvement. | 10-02-2014 |
20140159149 | SHORT CHANNEL TRENCH MOSFETS - A trench MOSFET with a short channel length is disclosed for reducing channel resistance, wherein at least one field relief region is formed underneath the body region in an epitaxial layer between every two adjacent gate trenches and self-aligned with a trenched source-body contact for prevention of drain/source punch-through issue. | 06-12-2014 |
20140120672 | TRENCH MOSFET HAVING A TOP SIDE DRAIN - This invention discloses a trench MOSFET comprising a top side drain region in a wide trench in a termination area besides a BV sustaining area, wherein said top side drain comprises a top drain metal connected to an epitaxial layer and a substrate through a plurality of trenched drain contacts, wherein the wide trench is formed simultaneously when a plurality of gate trenches are formed in an active area, and the trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in the active area. | 05-01-2014 |
20140048872 | AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES USING THREE MASKS PROCESS - A power semiconductor device with improved avalanche capability is disclosed by forming at least one avalanche capability enhancement doped region underneath an ohmic contact doped region. Moreover, a source mask is saved by using three masks process and the avalanche capability is further improved. | 02-20-2014 |
20130330892 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask. | 12-12-2013 |
20130307066 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A semiconductor power device with trenched floating gates having thick bottom oxide as termination is disclosed. The gate charge is reduced by forming a HDP oxide layer padded by a thermal oxide layer on trench bottom and a top surface of mesa areas between adjacent trenched gates. Therefore, only three masks are needed to achieve the device structure. | 11-21-2013 |
20130299901 | TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS - A trench MOSFET comprising a plurality of trenched gates surrounded by source regions encompassed in body regions in active area. A plurality of trenched source-body contact structure penetrating through the source regions and extending into the body regions, are filled with tungsten plugs padded with a Ti layer, a first and a second TiN layer, wherein the second TiN layer is deposited after Ti silicide formation to avoid W spiking occurrence. | 11-14-2013 |
20130234238 | SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES - A semiconductor power device integrated with ESD protection diode is disclosed by offering a dopant out-diffusion suppression layers prior to source dopant activation or diffusion to enhance ESD protection capability between gate and source. | 09-12-2013 |
20130234237 | SEMICONDUCTOR POWER DEVICE INTEGRATED WITH CLAMP DIODES HAVING DOPANT OUT-DIFFUSION SUPPRESSION LAYERS - A semiconductor power device integrated with clamp diodes is disclosed by offering dopant out-diffusion suppression layers to enhance the ESD protection between gate and source, and avalanche capability between drain and source. | 09-12-2013 |
20130214350 | INTEGRATED TRENCH MOSFET WITH TRENCH SCHOTTKY RECTIFIER - An integrated circuit comprising trench MOSFET having trenched source-body contacts and trench Schottky rectifier having trenched anode contacts is disclosed. By employing the trenched contacts in trench MOSFET and trench Schottky rectifier, the integrated circuit is able to be shrunk to achieve low specific on-resistance for trench MOSFET, and low V | 08-22-2013 |
20130207172 | TRENCH MOSFET HAVING A TOP SIDE DRAIN - This invention discloses a trench MOSFET comprising a top side drain region in a wide trench in a termination area besides a BV sustaining area, wherein said top side drain comprises a top drain metal connected to an epitaxial layer and a substrate through a plurality of trenched drain contacts, wherein the wide trench is formed simultaneously when a plurality of gate trenches are formed in an active area, and the trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in the active area. | 08-15-2013 |
20130168760 | TRENCH MOSFET WITH RESURF STEPPED OXIDE AND DIFFUSED DRIFT REGION - A trench MOSFET with split gates and diffused drift region for on-resistance reduction is disclosed. Each of the split gates is symmetrically disposed in the middle of the source electrode and adjacent trench sidewall of a deep trench. The inventive structure can save a mask for definition of the location of the split gate electrodes. Furthermore, the fabrication method can be implemented more reliably with lower cost. | 07-04-2013 |
20130168731 | SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TRENCH AND SELF-ALIGNED SOURCE REGIONS FOR MASK SAVING - A trench semiconductor power device with a termination area structure is disclosed. The termination area structure comprises a wide trench and a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide trench by doing poly-silicon CMP so that the body ion implantation is blocked by the trenched field plate on the trench bottom to prevent the termination area underneath the wide trench from being implanted. Moreover, a contact mask is used to define both trenched contacts and source regions of the device for saving a source mask. | 07-04-2013 |
20130092976 | A SEMICONDUCTOR POWER DEVICE INTEGRATRED WITHIMPROVED GATE SOURCE ESD CLAMP DIODES - A trench semiconductor power device integrated with four types of ESD clamp diodes for optimization of total perimeter of the ESD clamp diodes, wherein the ESD clamp diodes comprise multiple back to back Zener diodes with alternating doped regions of a first conductivity type next to a second conductivity type, wherein each of the doped regions has a closed ring structure. | 04-18-2013 |
20130075810 | SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE - A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is formed by the first poly-silicon layer. A shielded gate mask used to define the shielded gate is also used to define the trenched clamp diode. Therefore, one poly-silicon layer and a mask for the trenched clamp diode are saved. | 03-28-2013 |
20130075809 | SEMICONDUCTOR POWER DEVICE WITH EMBEDDED DIODES AND RESISTORS USING REDUCED MASK PROCESSES - A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed simultaneously through contact open areas defined by a contact mask. | 03-28-2013 |
20130020577 | MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CONTACT STRUCTURES - A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for Gate-Source clamp diode and avalanche protection for Gate-Drain clamp diode. | 01-24-2013 |
20130020576 | SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCHED CONTACT STRUCTURES - A trench shielded gate MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage, lower cost and improved performance. The present semiconductor device achieve low Vf and reverse leakage current for embedded Schottky rectifier, having over-voltage protection and avalanche protection between gate and source and between gate and drain. | 01-24-2013 |
20120313141 | FAST SWITCHING HYBRID IGBT DEVICE WITH TRENCHED CONTACTS - A hybrid IGBT device having a VIGBT and LDMOS structures comprises at least a drain trenched contact filled with a conductive plug penetrating through an epitaxial layer, and extending into a substrate; a vertical drain region surrounding at least sidewalls of the drain trenched contact, extending from top surface of the epitaxial layer to the substrate, wherein the vertical drain region having a higher doping concentration than the epitaxial layer. | 12-13-2012 |
20120309148 | METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE - A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures. | 12-06-2012 |
20120305985 | POWER SEMICONDUCTOR DEVICE COMPRISING A PLURALITY OF TRENCH IGBTS - A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures. | 12-06-2012 |
20120292694 | HIGH SWITCHING TRENCH MOSFET - A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode spreading resistance placed between a shielded gate electrode and a source metal to enhance the performance of the shielded gate trench MOSFET by adjusting doping concentration of poly-silicon in gate trenches to a target value. Furthermore, high cell density is achieved by employing the inventive shielded gate trench MOSFET without requirement of additional cost. | 11-22-2012 |
20120261737 | TRENCH MOSFET WITH TRENCHED FLOATING GATES AND TRENCHED CHANNEL STOP GATES IN TERMINATION - A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area The trench MOSFET further comprises at least one trenched channel stop gate around outside of the trenched floating gates and connected to at least one sawing trenched gate extended into scribe line for prevention of leakage path formation between drain and source regions. | 10-18-2012 |
20120217541 | IGBT WITH INTEGRATED MOSFET AND FAST SWITCHING DIODE - A power semiconductor device comprising a trench IGBT, a trench MOSFET and a fast switching diode for reduction of turn-on loss is disclosed. The inventive semiconductor power device employs a fast switching diode instead of body diode in the prior art. Furthermore, the inventive semiconductor power device further comprises an additional ESD protection diode between emitter metal and gate metal. | 08-30-2012 |
20120211831 | TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION - A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area. The trench MOSFET further comprise an EPR surrounding outside the multiple trenched floating gates in the termination area. | 08-23-2012 |
20120196416 | TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF - A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench MOSFET is composed of stripe cells to further increase cell packing density and decrease on resistance Rds between the drain region and the source region. | 08-02-2012 |
20120175737 | SEMICONDUCTOR DEVICES WITH GATE-SOURCE ESD DIODE AND GATE-DRAIN CLAMP DIODE - A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching. | 07-12-2012 |
20120175700 | TRENCH MOS RECTIFIER - A semiconductor device comprising trench MOSFET as MOS rectifier is disclosed. For ESD capability enhancement and reverse recovery charge reduction, a built-in resistor in the semiconductor device is introduced according to the present invention between gate and source. The built-in resistor is formed by a doped poly-silicon layer filled into multiple trenches. | 07-12-2012 |
20120175699 | TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS AND SELF-ALIGNED TRENCHED CONTACT - A power semiconductor device having a self-aligned structure and super pinch-off regions is disclosed. The on-resistance is reduced by forming a short channel without having punch-through issue. The on-resistance is further reduced by forming an on-resistance reduction implanted drift region between adjacent shield electrodes, having doping concentration heavier than epitaxial layer without degrading breakdown voltage with a thick oxide on bottom and sidewalls of the shield electrode. Furthermore, the present invention enhance the switching speed comparing to the prior art. | 07-12-2012 |
20120161201 | FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS - A lateral insulated gate bipolar transistor (LIGBT) includes a drain-anode adjoining trenched contact penetrating through an insulating layer and extending into an epitaxial layer, directly contacting to a drain region and an anode region, and the drain region vertically contacting to the anode region along sidewall of the drain-anode adjoining trenched contact. The LIGBT further comprises a breakdown voltage enhancement doping region wrapping around the anode region. The LIGBTs in accordance with the invention offer the advantages of high breakdown voltage and low on-resistance as well as high switching speed. | 06-28-2012 |
20120080748 | TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS - A trench MOSFET with short channel length and super pinch-off regions is disclosed, wherein the super pinch-off regions are implemented by forming at least two type pinch-off regions for punch-through prevention: a first type pinch-off region with a wide mesa width generated between lower portion of two adjacent trenched gates and below an anti-punch through region surrounding bottom of a trenched source-body contact filled with metal plug; a second type pinch-off region with a narrow mesa width generated below a body region and between upper portion of one trenched gate and the anti-punch-through region along sidewall of the trenched source-body contact. | 04-05-2012 |
20120074489 | SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS - A super-junction trench MOSFET with Resurf Stepped Oxide and trenched contacts is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . Furthermore, the fabrication method can be implemented more reliably with lower cost. | 03-29-2012 |
20120064684 | METHOD FOR MANUFACTURING A SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS - A method of manufacturing a super junction semiconductor device having resurf stepped oxide structure is disclosed by providing semiconductor silicon layer having trenches and mesas. A plurality of first doped column regions of a second conductivity type in parallel surrounded with second doped column regions of a first conductivity type adjacent to sidewalls of the trenches are formed by angle ion implantations into a plurality of mesas through opening regions in a block layer covering both the mesas and a termination area. | 03-15-2012 |
20120061754 | SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND SPLIT GATE ELECTRODES - A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. Furthermore, the fabrication method can be implemented more reliably with lower cost. | 03-15-2012 |
20120032261 | TRENCH MOSFET HAVING FLOATING DUMMY CELLS FOR AVALANCHE IMPROVEMENT - A trench MOSFET comprising source regions having a doping profile of a Gaussian-distribution along the top surface of epitaxial layer and floating dummy cells formed between edge trench and active area is disclosed. A SBR of n region existing at cell corners renders the parasitic bipolar transistor difficult to turn on, and the floating dummy cells having no parasitic bipolar transistor act as buffer cells to absorb avalanche energy when gate bias is increasing for turning on channel, therefore, the UIS failure issue is avoided and the avalanche capability of the trench MOSFET is enhanced. | 02-09-2012 |
20120021580 | METHOD OF MANUFACTURING TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS - In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The silicon layer is implanted with a source dopant through the contact open areas and the source dopant is diffused to form source regions, thereby a source mask is saved. A dry silicon etch is carried out to form trenched source-body contacts in the contact open areas, penetrating through the source regions and extending into the body regions. | 01-26-2012 |
20110316075 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION - A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask. | 12-29-2011 |
20110284954 | LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER - An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions surrounding a lower portion of all trenched gates sidewalls for reducing Qgd; a source dopant region disposed below trench bottoms of all trenched gates for functioning as a current path for preventing a resistance increased caused by the tilt-angle implanted body dopant regions. | 11-24-2011 |
20110266593 | SEMICONDUCTOR DEVICES WITH GATE-SOURCE ESD DIODE AND GATE-DRAIN CLAMP DIODE - A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching. | 11-03-2011 |
20110254086 | SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION - A trench MOSFET comprising a plurality of transistor cells having shielded trenched gates and multiple trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. In some preferred embodiments, the trenched floating gates in the termination area are implemented by using shielded electrode structure. | 10-20-2011 |
20110254071 | SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION - A trench MOSFET comprising a plurality of transistor cells having shielded trenched gates and multiple trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. In some preferred embodiments, the trenched floating gates in the termination area are implemented by using shielded electrode structure. | 10-20-2011 |
20110254070 | TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION - A trench MOSFET comprising a plurality of transistor cells, multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in active area. In some preferred embodiments, the trench MOSFET further comprises a gate metal runner surrounding outside the source metal and extending to the gate metal pad. Furthermore, the termination area further comprises an EPR surrounding outside the trenched floating gates. | 10-20-2011 |
20110248340 | Trench mosfet with body region having concave-arc shape - A trench Metal Oxide Semiconductor Field Effect Transistor with improved body region structures is disclosed. By forming the inventive body region structures with concave-arc shape with respect to epitaxial layer, a wider interfaced area between the body region and the epitaxial layer is achieved, thus increasing capacitance between drain and source Cds. Moreover, the invention further comprises a Cds enhancement doped region interfaced with said body region having higher doping concentration than the epitaxial layer to further enhancing Cds without significantly impact breakdown voltage. | 10-13-2011 |
20110233606 | Avalanche capability improvement in power semiconductor devices - A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures. | 09-29-2011 |
20110233605 | Semiconductor power device layout for stress reduction - A semiconductor power device layout with stripe cell structures is disclosed. The inventive structure applies horizontal gate trenches array and vertical gate trenches array alternatively arranged in single device (one or two directions) to balance out the stress caused from one direction. Furthermore, the inventive semiconductor power device provides gate connection trenches connecting to vertical gate trenches and/or horizontal trenches to reduce gate resistance Rg when gate trench length is long. | 09-29-2011 |
20110180844 | POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BREAKDOWN VOLTAGE DEGRADATION - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pads is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal. | 07-28-2011 |
20110169075 | Trench mosfet with ultra high cell density and manufacture thereof - A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench MOSFET is composed of stripe cells to further increase cell packing density and decrease on resistance Rds between the drain region and the source region. | 07-14-2011 |
20110169047 | POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BREAKDOWN VOLTAGE DEGRADATION - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pad is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal. | 07-14-2011 |
20110165748 | LDMOS WITH DOUBLE LDD AND TRENCHED DRAIN - A LDMOS with double LDD and trenched drain is disclosed. According to some preferred embodiment of the present invention, the structure contains a double LDD region, including a high energy implantation to form lightly doped region and a low energy implantation thereon to provide a low resistance path for current flow without degrading breakdown voltage. At the same time, a P+ junction made by source mask is provided underneath source region to avoid latch-up effect from happening. | 07-07-2011 |
20110156139 | Super-Junction trench mosfet with resurf step oxide and the method to make the same - A super-junction trench MOSFET with Resurf Stepped Oxide is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . . Furthermore, the fabrication method can be implemented more reliably with lower cost. | 06-30-2011 |
20110121386 | Trench MOSFET with trenched floating gates as termination - A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage. | 05-26-2011 |
20110108913 | LDMOS WITH DOUBLE LDD AND TRENCHED DRAIN - A LDMOS with double LDD and trenched drain is disclosed. According to some preferred embodiment of the present invention, the structure contains a double LDD region, including a high energy implantation to form lightly doped region and a low energy implantation thereon to provide a low resistance path for current flow without degrading breakdown voltage. At the same time, a P+ junction made by source mask is provided underneath source region to avoid latch-up effect from happening. | 05-12-2011 |
20110079844 | Trench mosfet with high cell density - A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the degradation of avalanche capability when shrinking the device in prior art. | 04-07-2011 |
20110070708 | Method for making trench MOSFET with shallow trench structures - A method for making trench MOSFET with shallow trench structures with thick trench bottom is disclosed. The improved method resolves the problem of deterioration of breakdown voltage resulted by LOCOS having a bird's beak shape introduced in prior art, and at the same time, the inventive device has a lower Qgd and lower Rds. | 03-24-2011 |
20110068389 | Trench MOSFET with high cell density - A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the degradation of avalanche capability when shrinking the device in prior art. | 03-24-2011 |
20110008939 | Method of making a trench MOSFET having improved avalanche capability using three masks process - A method of forming trench MOSFET structure having improved avalanche capability is disclosed. In a preferred embodiment according to the present invention, only three masks are needed in the fabricating process, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer for saving source mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source-body contact to channel region. | 01-13-2011 |
20110006363 | Trench MOSFET structures using three masks process - A trench MOSFET structure having improved avalanche capability is disclosed, wherein the source region is formed by performing source Ion Implantation through contact open region of a contact interlayer, and further diffused to optimize a trade-off between Rds and the avalanche capability. Thus, only three masks are needed in fabrication process, which are trench mask, contact mask and metal mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source-body contact to channel region. | 01-13-2011 |
20110006362 | Trench MOSFET with on-resistance reduction - A trench MOSFET with on-resistance reduction comprises a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein the said MOSFET further comprises a plurality of source-body contact trenches opened relative to a top surface into said source and body regions and each of the source-body contact trenches is filled with a contact metal plug as a source-body contact; a insulation layer covered over the top of the trenched gate, the body region and the source region; a front metal layer formed on a top surface of the MOSFET; wherein a low-resistivity phosphorus substrate and retrograded P-body formed by medium or high energy Ion Implantation to reduce Rds contribution from substrate and drift region. | 01-13-2011 |
20100314681 | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad - A structure of power semiconductor device integrated with clamp diodes sharing same gate metal pad is disclosed. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon. | 12-16-2010 |
20100289073 | Trench MOSFETS with ESD Zener diode - A semiconductor power device with Zener diode for providing an electrostatic discharge (ESD) protection and a thick insulation layer to insulate the Zener diode from a doped body region. The semiconductor power device further includes a Nitride layer underneath the thick oxide layer working as a stopper layer for protecting the thin oxide layer and the body region underneath whereby the over-etch damage and punch-through issues in process steps are eliminated. | 11-18-2010 |
20100289059 | Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pad is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon. | 11-18-2010 |
20100279478 | TRENCH MOSFET HAVING TRENCH CONTACTS INTEGRATED WITH TRENCH SCHOTTKY RECTIFIERS HAVING PLANAR CONTACTS - An integrated configuration comprising trench MOSFET having trench contacts and trench Schottky rectifier having planar contacts is disclosed. The trench contacts for trench MOSFET provide a lower specific on-resistance. Besides, for trench gate connection, planar gate contact is employed in the present invention to avoid shortage issue between gate and drain in shallow trench gate. Besides, W plugs filled into both trench contacts and planar contacts enhance the metal step coverage capability. | 11-04-2010 |
20100276728 | Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area - A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly located in active area which means avalanche capability of the semiconductor power device is enhanced by implementation of the dummy cells. | 11-04-2010 |
20100264488 | Low Qgd trench MOSFET integrated with schottky rectifier - An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions surrounding a lower portion of all trench gates sidewalls for reducing Qgd; a source dopant region disposed below a bottom surface of all trench gates for functioning as a current path for preventing a resistance increased caused by the body dopant regions. | 10-21-2010 |
20100237414 | MSD integrated circuits with shallow trench - A trench MOSFET device with embedded Schottky rectifier, gate-drain and gate-source diodes on single chip is formed with shallow trench structure to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for GS clamp diodes and avalanche protection for GD clamp diodes. More particularly, gate charge of the present semiconductor device is reduced due to the shallow trench surrounded by an additional N doped area around the bottom while keeping Rds low enough and at the same time, maintaining BV at a certain level | 09-23-2010 |
20100237411 | LDMOS with double LDD and trenched drain - A LDMOS with double LDD and trenched drain is disclosed. According to some preferred embodiment of the present invention, the structure contains a double LDD region, including a high energy implantation to form lightly doped region and a low energy implantation thereon to provide a low resistance path for current flow without degrading breakdown voltage. At the same time, a P+ junction made by source mask is provided underneath source region to avoid latch-up effect from happening. | 09-23-2010 |
20100224931 | TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTAGE - A trench DMOS transistor employing trench contacts has overvoltage protection for prevention of shortage between gate and source, comprising a plurality of first-type function trenched gates, at least one second-type function trenched gate and at least two third-type function trenched gates extending through body regions and into an epitaxial layer. The first-type function trenched gates are located in active area surrounded by a source region encompassed in the body region in the epitaxial layer for current conduction. The second-type function trenched gates are disposed underneath a gate metal with a gate trenched contacts filled with metal plug for gate metal connection. The third type function trenched gates are disposed directly and symmetrically underneath ESD trenched contact areas of anode and cathode in an ESD protection diode, serving as a buffer layer for prevention of gate-body shortage. | 09-09-2010 |
20100200912 | Mosfets with terrace irench gate and improved source-body contact - A trench MOSFET with terrace gates and improved source-body contact structure is disclosed. When refilling the gate trenches, the deposited polysilicon layer is higher than the sidewalls of the trenches to be used as terrace gates of the MOSFET, and the improved source-body contact structure can enlarge the P+ area below to wrap the sidewalls and bottom of source-body contact within P body region to further enhance the avalanche capability. | 08-12-2010 |
20100176448 | Intergrated trench mosfet with trench schottky rectifier - An integrated circuit comprising trench MOSFET having trenched source-body contacts and trench Schottky rectifier having trenched anode contacts is disclosed. By employing the trenched contacts in trench MOSFET and trench Schottky rectifier, the integrated circuit is able to be shrunk to achieve low specific on-resistance for trench MOSFET, and low V | 07-15-2010 |
20100176446 | MOSFET with source contact in trench and integrated schottky diode - A trench semiconductor power device with integrated Schottky diode is disclosed. P+ regions and n+ source regions are alternately arranged in mesa and on top of trench sidewall along stripe source-body contact area between two adjacent trenches. By employing this structure, cell density increased remarkably without increasing contact resistance because top portion of gate trench sidewall is provided as source-body contact area. | 07-15-2010 |
20100176445 | Metal schemes of trench MOSFET for copper bonding - A trench MOSFET with improved metal schemes is disclosed. The improved contact structure applies a buffer layer to minimize the bonding damage to semiconductor when bonding copper wire upon front source and gate metal without additional cost. | 07-15-2010 |
20100171173 | TRENCH MOSFET WITH IMPROVED SOURCE-BODY CONTACT - A trench MOSFET with improved source-body contact structure is disclosed. The improved contact structure can enlarge the P+ area below to wrap the sidewalls and bottom of source-body contact within P-body region to further enhance the avalanche capability. On the other hand, one of the embodiments disclosed a wider tungsten plug structure to connect source metal, which helps to further reduce the source contact resistance. | 07-08-2010 |
20100127324 | Trench MOSFET with terrace gate and self-aligned source trench contact - A trench MOSFET with terrace gate is disclosed for self-aligned contact. When refilling the gate trenches, the deposited polysilicon layer is higher than the sidewalls of the trenches to be used as a terrace gate of the MOSFET. The source contact width is determined by mesa width between two adjacent trenches minus 2 times of the oxide thickness deposited on the mesa instead of contact mask width which is wider than silicon contact width. Therefore, the position of source contact is still unchanged even if the misalignment of trench mask happens. At the same time, by using terrace gates, the Rg is thus reduced because the terrace gate provides more polysilicon as gate material than the conventional trench gate. | 05-27-2010 |
20100127323 | Trench MOSFET with trench source contact having copper wire bonding - A trench MOSFET with trench source contact structure having copper wire bonding is disclosed. By employing the proposed structure, die size can be shrunk into 30%˜70% with high cell density, and the spreading resistance is significantly reduce without adding expensive thick metal layer as prior art. To further reduce fabricating cost, copper wire bonding is used with requirement of thick Al alloys. | 05-27-2010 |
20100123185 | MSD integrated circuits with trench contact structures for device shrinkage and performance improvement - A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for GS clamp diodes and avalanche protection for GD clamp diodes. | 05-20-2010 |
20100090274 | TRENCH MOSFET WITH SHALLOW TRENCH CONTACT - A trench MOSFET element with shallow trench contact is disclosed. This shallow trench contact structure has some advantages: blocking the P+ underneath trench contact from lateral diffusion to not touch to channel region when a larger trench contact CD is applied; avoiding the trench gate contact etching through poly and gate oxide when trench gate becomes shallow; making lower cost to refill the trench contact using Al alloys with good metal step coverage as the trench contact is shallower. The disclosed trench MOSFET element further includes an n* region around the bottom of gate trenches to reduce Rds. In some embodiment, the disclosed trench MOSFET provides a terrace gate to further reduce Rg and make self-aligned source contact; In some embodiment, the disclosed trench MOSFET comprises a P* area underneath said P+ region for avalanche energy improvement with lighter dose than said P+ region. | 04-15-2010 |
20100090270 | TRENCH MOSFET WITH SHORT CHANNEL FORMED BY PN DOUBLE EPITAXIAL LAYERS - A power MOS device includes double epitaxial (P/N) structure is disclosed for reduction of channel length and better avalanche capability. In some embodiments, the power MOS device further includes an arsenic Ion implantation area underneath each rounded trench bottom to further enhance breakdown voltage and further reduce Rds, and the concentration of said arsenic doped area is higher than that of N-type epitaxial layer. As the gate contact trench could be easily etched over to penetrate the gate oxide, which will lead to a shortage of tungsten plug filled in gate contact trench to epitaixial layer, a terrace poly gate is designed in a preferred embodiment of present invention. By using this method, the gate contact trench is lifted to avoid the shortage problem. | 04-15-2010 |
20100072543 | TRENCH MOSFET WITH ETCHING BUFFER LAYER IN TRENCH GATE - The present invention is to provide a trench MOSFET with an etching buffer layer in a trench gate, comprising: a substrate which has a first surface and a second surface opposite to each other and comprises at least a drain region, a gate region, and a source region which are constructed as a plurality of semiconductor cells with MOSFET effect; a plurality of gate trenches, each of which is extended downward from the first surface and comprises a gate oxide layer covered on a inner surface thereof and a gate conductive layer filled inside, comprised in the gate region; at least a drain metal layer formed on the second surface according to the drain region; at least a gate runner metal layer formed on the first surface according to the gate region; and at least a source metal layer formed on the first surface according to the source region; wherein the gate trenches distinguished into at least a second gate trench formed at a terminal of the source region and at least a first gate trenches wrapped in the source region; and the second gate trench comprises a gate contact hole which is filled with metal to form a gate metal contact plug, and a gate buffer layer which is formed in the gate conductive layer at the bottom of the gate contact hole in the second gate trench to prevent from over etching, causing gate-drain shortage. | 03-25-2010 |
20090315107 | INTEGRATED TRENCH MOSFET AND JUNCTION BARRIER SCHOTTKY RECTIFIER WITH TRENCH CONTACT STRUCTURES - A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier. | 12-24-2009 |
20090315106 | Integrated trench Mosfet and Schottky Rectifier with trench contact structure - A trench MOSFET in parallel with trench Schottky barrier rectifier is formed on a single substrate. The present invention solves the constrains brought by planar contact of Schottky, for example, the large area occupied by planar structure. As the size of present device is getting smaller and smaller, the trench Schottky structure of this invention is able to be shrink and, at the same time, to achieve low specific on-resistance. By applying a double epitaxial layer in trench Schottky barrier rectifier, the device performance is enhanced for lower Vf and lower reverse leakage current Ir is achieved. | 12-24-2009 |
20090315104 | Trench MOSFET with shallow trench structures - A trench MOSFET with shallow trench structure is disclosed. The improved structure resolves the problem of degradation of BV caused by the As Ion Implantation in termination surface and no additional mask is needed which further enhance the avalanche capability and reduce the manufacture cost. | 12-24-2009 |
20090315103 | TRENCH MOSFET WITH SHALLOW TRENCH FOR GATE CHARGE REDUCTION - A power MOS device includes shallow trench structure for reduction of gate charge. To counteract the increase of Rds may caused by decreasing the depth of trench, the power MOS device further includes an arsenic Ion Implantation area underneath each trench bottom when N+ red phosphorus substrate is applied, and the concentration of said arsenic doped area is higher than that of epitaxial layer. As the shallow trench is performed, the gate contact trench could be easily etched over to penetrate the gate oxide, which will lead to a shortage of tungsten plug filled in gate contact trench to epitaixial layer. To prevent from this problem, a terrace poly gate is designed in a preferred embodiment of present invention. By using this method, the gate contact trench is lifted to avoid the shortage problem. | 12-24-2009 |
20090309181 | TRENCH SCHOTTKY WITH MULTIPLE EPI STRUCTURE - A trench Schottky barrier rectifier includes an cathode electrode at a face of a semiconductor substrate and an multiple epitaxial structure in drift region which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage. The multiple structure of the drift region contains a concentration of first conductivity dopants therein which comprises two or three different uniform value from a Schottky rectifying junction formed between the anode electrode and the drift region. The thickness of the insulating region (e.g., SiO2) in the MOS-filled trenches is greater than 1000 Å to simultaneously inhibit field crowing and increase the breakdown voltage of the device. The multiple epi structure is preferably formed by epitaxial growth from the cathode region and doped in-situ. | 12-17-2009 |
20090309130 | METHOD OF FABRICATING COLLECTOR OF IGBT - The IGBT is described here that exhibits high breakdown voltage, low on-voltage together with high turn-off speed. The collector of IGBT is formed on the backside of the wafer which has n type float zone. Methods for the p-type collector is implemented by depositing a layer of BSG which is 0.05˜0.1 um on the backside of the wafer and removing it after short time deposition. A thin and high surface concentration p+ layer acts as P type collector of the IGBT is formed on the bottom surface of the wafer. The back metal electrode is sintered to form ohmic contact on the P type collector with high surface concentration. The hole injection efficiency is decreased with a thin layer p+ layer which hat means no P implantation is needed to form the collector and the speed performance of the IGBT is therefore improved. | 12-17-2009 |
20090309097 | TESTING DEVICE ON WATER FOR MONITORING VERTICAL MOSFET ON-RESISTANCE - The present invention is to provide a testing device on wafer for monitoring vertical MOSFET on-resistance, formed on a substrate and the substrate comprising a first testing region; and a second testing region; wherein the first testing region and the second testing region are vertical MOSFETs respectively, which comprise at least a common gate region, at least a common drain region, and a plurality of source regions which are separated for each corresponding testing region. | 12-17-2009 |
20090212359 | TRENCHED MOSFET WITH TRENCHED SOURCE CONTACT - A trenched MOSFET with trenched source contact, comprising: a semiconductor region, further comprising a silicon substrate, a epitaxial layer corresponding to the drain region of the trenched MOSFET, a base layer corresponding to the body region of the trenched MOSFET, and a source layer corresponding to the source region of the trenched MOSFET; an interlayer oxide film formed on the source layer; a front metal layer formed on a upper surface of the semiconductor region; a back metal layer formed on a lower surface of the semiconductor region; a plurality of trenched gates formed to reach the epitaxial layer through the source layer and the base layer, and is covered by the interlayer oxide film; and a plurality of source contact trenches formed to reach the base layer through the interlayer oxide film and the source layer, and is covered by the front metal layer; wherein the silicon substrate, the epitaxial layer, the base layer, and the source layer are stacked in sequence; and each of the source contact trenches has a lateral contact layer at a sidewall thereof. | 08-27-2009 |
20090212354 | TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTATE - A trench DMOS transistor having overvoltage protection and prevention for shortage between gate and source when contact trenches are applied includes a substrate of a first conductivity type and a body region of a second conductivity type formed over the substrate. Trench gates extend through the body region and the substrate. An insulating oxide layer lines the trench and overlies the body region. A conductive electrode is deposited in the trench so that it overlies the insulating layer. A source region of the first conductivity type is formed in the body region adjacent to the trench. An undoped polysilicon layer overlies a portion of the insulating layer defining the Zener diode region. A plurality of cathode regions of the first conductivity type is formed in undoped polysilicon layer. At least one anode region is in contact with adjacent ones of the plurality of cathode regions. Trench gates underneath the Zener diode act as the buffer layer for prevention of shortage between gate and source. | 08-27-2009 |
20090212321 | Trench IGBT with trench gates underneath contact areas of protection diodes - A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above said semiconductor power device. Trench gates are formed underneath the contact areas of the clamp diodes as the buffer layer for prevention of shortage. | 08-27-2009 |