THELEDS CO., LTD. Patent applications |
Patent application number | Title | Published |
20110272730 | LIGHT EMITTING DEVICE - A light emitting device having an electrode structure in which resistance to electrostatic discharge (ESD) is increased, the static electricity is efficiently dispersed and a current concentration phenomenon is prevented, the light emitting device including: a substrate; a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer opposite to the first conductivity type semiconductor layer that are sequentially formed on the substrate; a first conductivity type electrode pad formed on the first conductivity type semiconductor layer; a second conductivity type electrode pad formed on the second conductivity type semiconductor layer; a first auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and having one end connected to the second conductivity type electrode pad and the other end formed in an opposite direction to a direction toward the first conductivity type electrode pad; and a second auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and including a main arm having one end connected to the second conductivity type electrode pad and the other end formed in a direction toward the first conductivity type electrode pad and a plurality of second auxiliary sub-electrodes extending from the other end of the main arm, wherein a direction in which an end of each of the second auxiliary sub-electrodes extends, is not toward the first conductivity electrode pad. | 11-10-2011 |
20110193122 | SEMICONDUCTOR SUBSTRATE AND LIGHT EMITTING DEVICE USING THE SAME - There are provided a semiconductor substrate configured to improve the light extraction efficiency of a light emitting device, and a light emitting device using the substrate. The light emitting device includes the substrate, a buffer layer, and a light emitting structure, and the buffer layer and the light emitting structure being sequentially stacked on the substrate. The substrate includes a plurality of lenses disposed on a top surface thereof, and the lenses have a horn shape and are configured such that the buffer layer grows both on the top surface of the substrate and lateral surfaces of the lenses. | 08-11-2011 |
20110175113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device having an improved electrode structure for uniform current density and high brightness. According to the present invention, an light emitting device can have an electrode structure configured to spread a current uniformly and efficiently throughout the entire area of the light emitting device. Therefore, current density distribution can be more uniform in the light emitting device. End parts of second conductive type auxiliary electrodes are gradually shortened in length in a direction away from a first conductive type electrode pad so that a current flowing around the first conductive type electrode can be uniform to increase optical conversion efficiency and lower a driving voltage. | 07-21-2011 |
20110101397 | LIGHT EMITTING DIODE PACKAGE HAVING LENS - Provided is a light emitting diode package. The light emitting diode package includes a package body, a light emitting diode chip, and a package lens. The light emitting diode chip is installed in the package body. The package lens is installed in the package body to cover the light emitting diode chip, and is formed to have a shape corresponding to a radiation angle pattern of the light emitting diode chip. | 05-05-2011 |
20100159625 | Method for Manufacturing P Type Gallium Nitride Based Device - A method for manufacturing a p-type gallium nitride-based (GaN) device is disclosed. In accordance with the method, an Mg in an MgN | 06-24-2010 |