JAPAN SUPER QUARTZ CORPORATION Patent applications |
Patent application number | Title | Published |
20130014474 | CLOSURE FOR SILICA GLASS CRUCIBLE, SILCA GLASS CRUCIBLE AND METHOD OF HANDLING THE SAME - A closure for silica glass crucible to be mounted on an opening portion of a silica glass crucible is provided with a peripheral edge mounting portion closely adhered to an inner peripheral end of the opening portion. | 01-17-2013 |
20120318021 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor. | 12-20-2012 |
20120285372 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME - Provided is a vitreous silica crucible for pulling a silicon single crystal, which stably suppresses surface vibration of a silicon melted solution filled therein and has a long life, and a method for manufacturing the same. The vitreous silica crucible for pulling a silicon single crystal includes a peripheral wall portion, a curved portion, and a bottom portion, wherein a plurality of minute concave portions are formed on a certain area of an inner surface of the peripheral wall portion, and a plurality of bubbles are formed on a lower position of the minute concave portions. | 11-15-2012 |
20120272687 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor. | 11-01-2012 |
20120272682 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - During fabrication of a vitreous silica crucible, contamination of the vitreous silica crucible due to wear particles and debris of components of an apparatus for manufacturing a vitreous silica crucible is reduced by preventing damage and wear of the components of the apparatus due to silica fume. The apparatus for manufacturing a vitreous silica crucible is divided into a lower section for accommodating a mold and a mold driving system and an upper section for accommodating an arc electrode driving system, wherein a sectioning member including one or more communication paths for allowing penetration of arc electrodes, thereby the air flow is controlled so as to reduce exchange between gas in the upper section and gas in the lower section. | 11-01-2012 |
20120270167 | COVER FOR VITREOUS SILICA CRUCIBLE AND VITREOUS SILICA CRUCIBLE AND METHOD OF HANDLING THE SAME - By providing a method capable of avoiding invasion of starting material powder for crucible into an inner face of the crucible, it is made possible to reliably avoid the invasion of foreign substances into a vitreous silica crucible until an actual use time of the crucible and to handle the crucible with no contamination. A cover | 10-25-2012 |
20120260852 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region. | 10-18-2012 |
20120255487 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion. | 10-11-2012 |
20120167821 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a method of manufacturing a vitreous silica crucible including: a taking-out process of taking out the vitreous silica crucible from the mold, a honing process of removing the unfused silica powder layer on the outer surface of the vitreous silica crucible, and further comprising, after the taking-out process and before the honing process, a marking process of marking an identifier comprised of one or more groove line on the outer surface of the vitreous silica crucible, wherein the groove line after the honing process has a depth of 0.2 to 0.5 mm, and a width of 0.8 mm or more at the opening of the groove line. | 07-05-2012 |
20120167628 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes comprising: a preparation process for determining optimal temperatures during heating and fusing the silica powder layer for one or more selected from the group consisting of the silica powder layer, fume generated during arc fusing, and arc flame generated in the arc discharge; a temperature measuring process for measuring actual temperatures during heating and fusing for one or more selected from the group where the optimal temperatures are determined; and a temperature controlling process for controlling the actual temperatures for one or more selected from the group where the actual temperatures are measured so that the actual temperatures match the optimal temperatures. | 07-05-2012 |
20120167627 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points. | 07-05-2012 |
20120167625 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a vitreous silica crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring temperatures at measuring points provided on different heights of an inner surface of the silica powder layer while rotating the mold, and controlling the arc discharge to enable detection, at each measuring point, of a local maximum point which appears first in the arc fusing process. | 07-05-2012 |
20120167624 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring a temperature of the silica powder layer, and controlling a vitreous silica fused state based on a reference temperature which is a temperature at a local maximum point which appears first in the arc fusing process. | 07-05-2012 |
20120167623 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Accurate temperature measurement during manufacturing a vitreous silica crucible is enabled. The present invention provides an apparatus for manufacturing a vitreous silica crucible including: a mold for forming a silica powder layer by supplying silica powder therein; an arc discharge unit having carbon electrodes and a power supply unit and for heating and fusing the silica powder layer by arc discharge; and a temperature measurement unit for measuring temperature of a fused portion in the mold, wherein the temperature measurement unit is an radiation thermometer for measuring temperature by detecting radiation energy of a wavelength of 4.8 to 5.2 μm. | 07-05-2012 |
20120160159 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible | 06-28-2012 |
20120160158 | COMPOSITE CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the crucible. The present invention provides a composite crucible including a vitreous silica crucible body having a sidewall portion and a bottom portion, and a reinforcement layer provided on an outer surface side of an upper end portion of the vitreous silica crucible body, wherein the reinforcement layer is made of mullite material whose main component is alumina and silica. | 06-28-2012 |
20120160155 | COMPOSITE CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON CRYSTAL - The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible | 06-28-2012 |
20120141704 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE, VITREOUS SILICA CRUCIBLE - The present invention provides a method of manufacturing a vitreous silica crucible having a transparent layer by use of waste vitreous silica. According to the present invention, there is provided a method of manufacturing a vitreous silica crucible for manufacturing a monocrystalline or polycrystalline silicon ingot, including a process of vitrifying a silica powder sintered body having a crucible shape in the whole or part of the thickness direction by arc fusing the silica powder sintered body from the inner surface side, wherein the method further includes at least one means of (1) depressurizing the silica powder sintered body from the outer surface side during the arc fusing, and (2) forming a synthetic vitreous silica layer on the inner surface by spraying synthetic silica powder onto the inner surface of the silica powder sintered body during the arc fusing. | 06-07-2012 |
20120141622 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall | 06-07-2012 |
20120137965 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL - There is provided a vitreous silica crucible whose strength at high temperature is high, and which allows easy taking-out from a susceptor after completion of pulling. The vitreous silica crucible | 06-07-2012 |
20120137964 | VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region. | 06-07-2012 |
20120137963 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible, which is resistant to deformation and corrosion even when heated at high temperature for a long time. There is provided a vitreous silica crucible of the present invention including a substantially cylindrical straight body portion, a curved bottom portion, and a corner portion smoothly connecting the straight body portion and the bottom portion, wherein a wall of the vitreous silica crucible includes, from an inner surface side, a transparent layer and a bubble-containing layer, and a ratio of a thickness of the bubble-containing layer with respect to a thickness of the transparent layer at an intermediate position between an upper end and a lower end of the straight body portion is 0.7 to 1.4. | 06-07-2012 |
20120137735 | METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - There is provided a method of manufacturing a vitreous silica crucible having non-bubbles on the inner surface without necessitating new apparatuses for grinding and polishing and without damaging the productivity. According to the present invention, there is provided a method of manufacturing a vitreous silica crucible including the processes of: gathering a vitreous silica layer containing residual bubbles existing in a near-surface region of the transparent layer of the vitreous silica crucible by controlling the number of rotations applied to the vitreous silica crucible in a state that an inner surface side of the vitreous silica crucible is fused by arc heating; and moving a portion of a non-bubble layer in the surface of the transparent layer exposed by movement of the residual bubble-containing layer to cover a region in which bubbles have gathered with the non-bubble layer. | 06-07-2012 |
20120137733 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is a method for manufacturing a vitreous silica crucible and a manufacturing apparatus for the same, which can reduce the amount of bubbles and impurities of a crucible inner surface and enhance a crystallization yield of silicon single crystal. A method for manufacturing a vitreous silica crucible of the invention includes a silica powder supplying process of supplying silica powder in a rotating mold to form a silica powder layer; an arc fusing process of fusing the silica powder layer by arc discharge generated by carbon electrodes; and a fire polishing process of throwing an arc flame toward a target surface of the silica powder layer for surface removal, wherein, in the fire polishing process, the distances from the tips of the carbon electrodes to the target surface is set to be equal. | 06-07-2012 |
20120137732 | METHOD OF MANUFACTURING GRANULATED SILICA POWDER, METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of manufacturing a vitreous silica crucible having a transparent layer by use of waste vitreous silica, and silica powder suitable for the manufacturing. According to the present invention, there is provided a method of manufacturing granulated silica powder comprising a process for pulverizing waste vitreous silica generated in the manufacturing process of a crucible to form silica fine powder having an average particle diameter of 100 μm or less, and a process for granulating the silica fine powder to obtain granulated silica powder having an average particle diameter of 50 μm or more under helium atmosphere. | 06-07-2012 |
20120132133 | VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm | 05-31-2012 |
20120131954 | APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end. | 05-31-2012 |
20120125257 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible. | 05-24-2012 |
20120037069 | METHOD OF EVALUATING SILICA POWDER, VITREOUS SILICA CRUCIBLE, AND METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of evaluating silica powder which, enables precise prediction of easiness of crystallization of a vitreous silica crucible. According to the present invention, provided is a method of evaluating silica powder including a sample preparation process for preparing a vitrified sample by fusing silica powder at a fusing temperature of 1700 to 1900 deg. C., followed by cooling; a sample heat treatment process for retaining the sample for 30 minutes or more at a temperature of 1400 to 1750 deg. C., followed by cooling; and a sample evaluation process for evaluating a state of opacification of the sample after the sample heat treatment process. | 02-16-2012 |
20120017824 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING SILICON INGOT - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible in multi-pulling. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, comprising a mineralizer on an inner surface of the crucible, wherein the mineralizer contains at least one atoms selected from the group consisting of Ca, Sr, Ba, Ra, Ti, Zr, Cr, Mo, Fe, Co, Ni, Cu, and Ag, and the concentration of the mineralizer on the inner surface is 1.0×10 | 01-26-2012 |
20110315072 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON INGOT - Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm. | 12-29-2011 |
20110315071 | VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can restrain deterioration of crystallinity of a silicon ingot in multi-pulling. Provided is a vitreous silica crucible for pulling a silicon single crystal, the crucible has a wall having, from an inner surface toward an outer surface of the crucible, a synthetic vitreous silica layer, a natural vitreous silica layer, an impurity-containing vitreous silica layer and a natural vitreous silica layer. | 12-29-2011 |
20110295405 | METHOD OF CALCULATING TEMPERATURE DISTRIBUTION OF CRUCIBLE - Provided is a method of calculating a temperature distribution with higher accuracy than a conventional method, which calculates a temperature distribution of an inner surface of a silica powder molded body during manufacturing based on boundary conditions corrected in accordance with the actually measured temperature in consideration of plasma radiation by arc discharge and heat radiation of arc discharge. | 12-01-2011 |
20110214454 | METHOD OF MANUFACTURING CARBON ELECTRODE AND METHOD OF MANUFACTURING FUSED SILICA CRUCIBLE - A method of manufacturing a carbon electrode for melting an object to be melted by arc discharge, includes: a rubbing step of rubbing the surface of the carbon electrode before power is supplied with a rubbing material of the same type as the object to be melted. | 09-08-2011 |
20110197631 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is a method of manufacturing a vitreous silica crucible, including: an arc fusing process for fusing the silica powder molded body by using arc flames generated from the plurality of carbon electrodes, wherein the arc fusing process is performed in a state of disposing tips of at least a pair of carbon electrodes of the plurality of carbon electrodes closer to a target surface of the silica powder molded body than other carbon electrode tips, and setting distances from each of the tips of the closer carbon electrodes to the target surface, to be equal, and the arc fusing process is performed by heating and fusing the silica powder molded body while performing fire polishing, which partially removes an inner surface of the silica powder molded body by using arc flames generated by the closer carbon electrodes. | 08-18-2011 |
20110165054 | METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES - [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. | 07-07-2011 |
20110165028 | METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES - [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. | 07-07-2011 |
20110099952 | Crane device for wrapped quartz glass crucible and method of packing wrapped quartz glass crucible using the device - An object of the present invention is to provide a crane device suitable for handling a wrapped crucible, which crane device is capable of realizing mechanical handling of the wrapped crucible by way of a machine without manual work. In view of this, the present invention provides a crane device adapted to be capable of making reciprocal movements along a path between a position above a lifting-up point where a wrapped quartz glass crucible is placed and another position above a putting-down point where a packing container is placed and ascending to/descending from the path at each of the lifting-up point and the putting-down point, the crane device having: four arms extending in the ascend-descend direction and disposed at apexes of a quadrangle such that two arms paired on a diagonal line of the quadrangle are movable to advance to/separate from each other; and a claw provided at a rear end of each arm to extend in the advancing direction of the arm. | 05-05-2011 |
20110079047 | APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided are an apparatus and a method for manufacturing a vitreous silica crucible, which enable accurate measurement of a fume generation amount, prevention of deterioration of an inner surface property, and real-time control of a raw material melting state. Provided is an apparatus for manufacturing a vitreous silica crucible | 04-07-2011 |
20110023773 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - Provided is a vitreous silica crucible for pulling a silicon single crystal, having an inner surface layer which is excellent in uniformity and has a low bubble content rate, and a method of manufacturing the same. Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal comprising the step of forming an inner surface layer | 02-03-2011 |
20110020103 | Handling device and handling method of quartz glass crucible - An object of the present invention is to provide a crucible handling device that can firmly sandwich and reliably move a quartz glass crucible under a clean environment and a method of handling a quartz glass crucible using the crucible handling device. The present invention provides a crucible handling device | 01-27-2011 |
20110011334 | SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING THE SAME - There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline. | 01-20-2011 |
20110011228 | METHOD AND APPARATUS FOR CUTTING VITREOUS SILICA CRUCIBLE - A cutting method and an apparatus are provided which enable a rim area or other part of a vitreous silica crucible to be cut off so as to leave a smooth cut surface without damaging the cut edge, etc. The apparatus for cutting a vitreous silica crucible comprises a disk-shaped cutting blade ( | 01-20-2011 |
20100326349 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND VITREOUS SILICA CRUCIBLE - Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V | 12-30-2010 |
20100319609 | VITREOUS SILICA CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND USE THEREOF - A vitreous silica crucible for pulling single-crystal silicon, in which the vibration of a melt surface at the initial stage of the pulling of single-crystal silicon can be suppressed, a shoulder portion of single-crystal silicon can be stably formed, and a high yield of single-crystal silicon can be achieved. | 12-23-2010 |
20100319608 | SILICA GLASS CRUCIBLE, METHOD OF MANUFACTURING THE SAME AND PULLING METHOD - A silica glass crucible including an outer surface layer formed of a bubble-containing silica glass layer and an inner surface layer formed of a silica glass layer whose bubbles are invisible to the naked eye, so as to sufficiently disperse heat from the external radiation thereby preventing temperature irregularity in the silicon melt, and at the same time, exhibit excellent heat conductivity thereby giving a uniformly heated state over a wide range in the entire crucible without taking a long time for increasing the temperature to form a silicon melt, wherein an intermediate layer is interposed between the outer surface layer and the inner surface layer while in the intermediate layer, a bubble-containing silica glass layer (bubble-containing layer) including bubbles with a diameter of 100 μm or smaller by 0.1% or more in the volumetric bubble content and a silica glass layer (transparent glass layer) including the bubbles by 0.05% or less in the volumetric bubble content are laminated. | 12-23-2010 |
20100314400 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible which can restrain inward collapse deformation at high temperature during pulling even when the crucible has a large opening diameter. The vitreous silica crucible has an outer layer made of natural fused silica and an inner layer made of synthetic fused silica. The straight body section is outwardly-widened upwardly. Preferably, the difference in inner diameter of the lower and upper ends of the outwardly-widened section is 0.1% or more. The inner layer made of synthetic fused silica on the corner section has a layer thickness which is 20% to 80% of the wall thickness of the central portion of the corner section. Preferably, the inner layer made of synthetic fused silica on the straight body section and the bottom section is thinner than that on the corner section. | 12-16-2010 |
20100251959 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL - Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer( | 10-07-2010 |
20100244311 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion. | 09-30-2010 |
20100236473 | VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND METHOD OF MANUFACTURING THE SAME - In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm. | 09-23-2010 |
20100229599 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - In order to provide method and apparatus for manufacturing a vitreous silica crucible with little mixing of foreign matter and stable arc during arc melting, the method and apparatus for manufacturing a vitreous silica crucible have a device which blows off air from the side of arc electrodes toward a melting space of a mold, and air discharge ports which discharge the air within the heating furnace, and perform forced supply of air into the melting space during melting to make the atmospheric pressure of the melting space higher than the surroundings, and preferably, form an air pressure difference of 100 Pa or more between the melting space and the surroundings, thereby performing melting. | 09-16-2010 |
20100226747 | CLOSURE FOR SILICA GLASS CRUCIBLE, SILICA GLASS CRUCIBLE AND METHOD OF HANDLING THE SAME - A closure for silica glass crucible to be mounted on an opening portion of a silica glass crucible is provided with a peripheral edge mounting portion closely adhered to an inner peripheral end of the opening portion. | 09-09-2010 |
20100212582 | MODIFICATION PROCESS OF SYNTHETIC SILICA POWDER AND ITS QUARTZ GLASS PRODUCT - A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C. | 08-26-2010 |
20100192841 | REINFORCING METHOD OF SILICA GLASS SUBSTANCE AND REINFORCED SILICA GLASS CRUCIBLE - A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible. | 08-05-2010 |
20100180815 | CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL - A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible. | 07-22-2010 |
20100178855 | CARBON ELECTRODE GRINDING APPARATUS - A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode. | 07-15-2010 |
20100178375 | MOLD FOR PRODUCING SILICA CRUCIBLE - There is provided a mold for use in the production of a silica crucible by heat-fusing silica or quartz powder attached onto an inner wall of a rotating mold, wherein an inner side of an upper opening portion of the mold corresponding to an upper part of the silica crucible is ground to obtain a step portion and a ring-shaped heat insulating barrier member having an inner diameter smaller than that of the mold is disposed on the step portion through a hollow disk-shaped support member having an inner diameter equal to or somewhat larger than that of the heat insulating barrier member. | 07-15-2010 |
20100178374 | MOLD FOR PRODUCING SILICA CRUCIBLE - In a mold for use in the production of a silica crucible, a cylindrical rim member is engagedly supported through hooks to an inner side of an upper opening portion of the mold corresponding to an upper part of a silica crucible and an outer diameter of the rim member is smaller than an inner diameter of the mold but larger than an inner diameter of the silica crucible. | 07-15-2010 |
20100176530 | MOLD FOR PRODUCING SILICA CRUCIBLE - In a mold for use in the production of a silica crucible, a mold cover corresponding to a small-diameter thinned portion of an upper part of the silica crucible is detachably disposed on a mold substrate corresponding to a main body of the silica crucible, and the mold cover has a barrier function against arc heating, and an inner diameter of the mold cover is smaller than that of the mold substrate but larger than that of the silica crucible. | 07-15-2010 |
20100170298 | Vitreous silica crucible manufacturing apparatus - A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R | 07-08-2010 |
20100165347 | METHOD AND APPARATUS FOR DETECTING COLORED FOREIGN PARTICLES IN QUARTZ POWDER MATERIAL - Colored foreign particles contained in quartz powder material are detected in a high precision with the specified detection apparatus even when the colored foreign particles are pale colored foreign particles such as iron-based refuse, organic refuse and carbon-based refuse. | 07-01-2010 |
20100162947 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced. | 07-01-2010 |
20100162944 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed. | 07-01-2010 |
20100162943 | SILICA GLASS CRUCIBLE AND METHOD OF PULLING SILICON SINGLE CYRSAL WITH SILICA GLASS CRUCIBLE - In a silica glass crucible used for pulling a silicon crystal, a circumferential maximum tolerance of each of bubble content, wall thickness and transmission as measured over a full circumference of the crucible at a same height position is not more than 6%. | 07-01-2010 |
20100162767 | FLUID-COOLED MOLD - A fluid-cooled mold for the production of a quartz crucible provided in its interior with a space for flowing of cooling fluid comprises an outer mold section made from a heat-conductive metal or alloy material and an inner mold section closely arranged to an inner surface of the outer mold section and made from a heat-resistant material. | 07-01-2010 |
20100162760 | METHOD OF PRODUCING VITREOUS SILICA CRUCIBLE - A method for manufacturing a quartz glass crucible has a deposition step of depositing quartz powder on an inner wall surface of a bottomed cylindrical mold, while rotating the mold, and a melting step of obtaining the quartz glass crucible by vitrifying the quartz powder deposited on the inner wall surface of the mold by heating and melting the quartz powder. In the deposition step, under a state where the quantity of electrostatic charge of the quartz powder is controlled to be within a range of 1.0 kV or below in absolute value, the quartz powder is applied to the inner wall surface of the mold, and the thickness of the quartz glass crucible is controlled by maintaining the density of the quartz powder deposition layer on the inner wall surface of the mold within a fixed range. | 07-01-2010 |
20100154703 | SILICA GLASS CRUCIBLE - To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. | 06-24-2010 |
20100154702 | SURFACE MODIFIED QUARTZ GLASS CRUCIBLE, AND ITS MODIFICATION PROCESS - A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible. | 06-24-2010 |
20100147213 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less. | 06-17-2010 |
20100132608 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 μm or more and 450 μm or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage. | 06-03-2010 |
20100126407 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 05-27-2010 |
20100112115 | MOLD FOR PRODUCING A SILICA CRUCIBLE - A mold for the production of a silica crucible by heat-fusing silica or quartz powder attached onto an inner wall of a rotating mold, wherein a ring-shaped heat insulating barrier material having a specified inner diameter is disposed on an inner peripheral wall of an upper opening portion of the mold corresponding to an upper region of the silica crucible. | 05-06-2010 |
20100107970 | SILICA GLASS CRUCIBLE HAVING MULTILAYERED STRUCTURE - Disclosed is a silica glass crucible employed in pulling silicon single crystals. The crucible comprises at least a transparent layer, semitransparent layer, and opaque layer disposed from the inner surface side to the outer surface side of the crucible. The content of bubbles in the transparent layer is less than 0.3 percent; the content of bubbles in the semitransparent layer falls within a range of from 0.3 to 0.6 percent; and the content of bubbles in the opaque layer is greater than 0.6 percent. | 05-06-2010 |
20100107965 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THEREOF AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less. | 05-06-2010 |
20100107691 | METHOD OF MANUFACTURING SILICA GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTALS - The disclosed is a method of manufacturing a silica glass crucible for pulling silicon single crystals. In the method, reduced pressure is imparted from the inner surface to the outer surface of a crucible-shaped molded product and the crucible-shaped molded product is arc-fused while rotating the same to form a silica glass crucible with a transparent layer on the inner surface side and a bubble layer on the outer surface side. The inner surface of the wall portion of the silica glass crucible is fused a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the wall portion to be displaced toward the bottom portion of the inner surface of the wall portion. The inner surface of the bottom portion of the silica glass crucible is fuse a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the bottom portion to be displaced toward the periphery of the inner surface of the bottom portion. Either the step of displacement toward the bottom portion or the step of displacement toward the outer periphery is inverted first. | 05-06-2010 |
20100095881 | ARC DISCHARGE APPARATUS, APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA GLASS CRUCIBLE, AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL - The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm | 04-22-2010 |
20100095880 | Arc melting high-purity carbon electrode and application thereof - An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions on the inner surface of the crucible. The arc melting high-purity carbon electrode is a carbon electrode used to heat and melt silica powder by arc discharge, in which the density of the carbon electrode is equal to or more than 1.60 g/cm | 04-22-2010 |
20100089308 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 04-15-2010 |
20100077611 | METHOD OF MANUFACTURING CARBON ELECTRODE AND METHOD OF MANUFACTURING FUSED SILICA CRUCIBLE - A method of manufacturing a carbon electrode for melting an object to be melted by arc discharge, includes: a rubbing step of rubbing the surface of the carbon electrode before power is supplied with a rubbing material of the same type as the object to be melted. | 04-01-2010 |
20100071613 | METHOD AND APPARATUS FOR MANUFACTURING FUSED SILICA CRUCIBLE, AND THE FUSED SILICA CRUCIBLE - A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98. | 03-25-2010 |
20100071417 | ARC DISCHARGE METHOD, ARC DISCHARGE APPARATUS, AND FUSED SILICA CRUCIBLE MANUFACTURING APPARATUS - An arc discharge method of the present invention includes the steps of: heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in an output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 to 0.9. | 03-25-2010 |
20100055222 | APPARATUS FOR THE PRODUCTION OF SILICA CRUCIBLE - In an apparatus for the production of a silica crucible comprising a carbon mold suitable for producing the silica crucible by the rotating mold method, the carbon mold has a thermal conductivity of not more than 125 W/(m·K). | 03-04-2010 |
20100006022 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME - A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm | 01-14-2010 |
20100005836 | METHOD FOR PRODUCING QUARTZ GLASS CRUCIBLE - A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles. | 01-14-2010 |
20100000465 | METHOD FOR PRODUCING VITREOUS SILICA CRUCIBLE - A method is provided for producing a vitreous silica crucible having excellent shape formability and fewer internal bubbles without excessively heating the curved portion and the bottom part. The method comprises arc melting a quartz powder molded product loaded in a rotating mold while performing vacuum suction, wherein the electrode is moved sideways with respect to the mold center line upon the initiation of arc melting or during the arc melting, and the arc melting is performed at an eccentric position, and preferably the time for total heating is limited to 60% or less of the total arc melting time. A vitreous silica crucible produced by this method is also provided. | 01-07-2010 |
20090293806 | SILICA GLASS CRUCIBLE AND METHOD FOR MANUFACTURING THE SAME - A silica glass crucible for pulling up a silicon crystal related to the present invention includes a roundness Sx of an interior surface of the silica glass crucible and a roundness Sy of an exterior surface of the silica glass crucible in at least a wall part of the silica glass crucible both being 0.4 or less (Sx/M≦0.4, Sy/M≦0.4) to a maximum thickness M in the same measurement height as the roundness. | 12-03-2009 |
20090279996 | CRUCIBLE LIFT DEVICE AND METHOD FOR TAKING-OUT CRUCIBLE - A crucible lift device for taking a crucible out of a mold is provided with a lid member which closely contacts a limb portion defining an opening of a crucible; a decompressing mechanism which decompresses an internal space of the crucible sealed with the lid member; and a vertically-moving mechanism for the lid member. The crucible lift device includes a stand, and the vertically-moving mechanism includes a crane device which is fixed to a beam provided on an upper end of the stand and vertically moves the lid member. The decompressing mechanism includes a suction duct which penetrates the lid member to open into the internal space of crucible, and a decompressor which is connected to the suction duct. The vertically-moving mechanism can integrally lift the crucible in which the internal space is decompressed together with the lid member. | 11-12-2009 |
20090272315 | SILICA GLASS CRUCIBLE - A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer. | 11-05-2009 |
20090257939 | METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES - [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. | 10-15-2009 |
20090173276 | HIGH-PURITY VITREOUS SILICA CRUCIBLE USED FOR PULLING LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT - A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter. | 07-09-2009 |
20090165701 | VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON - A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range | 07-02-2009 |
20090165700 | INNER CRYSTALLIZATION CRUCIBLE AND PULLING METHOD USING THE CRUCIBLE - A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 μm from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1 mm from the inner surface of the crucible. The concentration of OH groups in the surface glass layer is 90 ppm or less, and the concentration of OH groups in the glass layer is equal to or more than 90 ppm and equal to or less than 200 ppm. The bubble content in the glass layer is 0.1% or less. | 07-02-2009 |
20090145351 | VITREOUS SILICA CRUCIBLE - The present invention relates to a vitreous silica crucible for pulling up silicon single crystals by a pulling-up process having a first stage and a second stage after the first stage. The crucible comprises a transparent inner layer containing inner layer bubbles, and an outer layer containing outer layer bubbles. The second stage expansion coefficient X | 06-11-2009 |
20090084308 | Easily crystallizable vitreous silica member, vitreous silica crucible and method for manufacturing single-crystal silicon - A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible. | 04-02-2009 |
20080289568 | QUARTZ GLASS CRUCIBLE, PROCESS FOR PRODUCING THE SAME, AND USE - A crucible has a structure where a layer containing a crystallization accelerating component such as aluminum or the like (a crystallization accelerating layer) is inserted inside a quartz glass layer of a crucible straight body part excepting a crucible bottom part. The crucible does not deform and fall inwardly at the straight body part since a part containing a crystallization accelerating component advances to crystallize so as to increase strength at a high temperature when the crucible is used in pulling up silicon single crystal. Therefore, a single crystallization rate can be increased. Further, since the crystallization accelerating layer is inserted inside the quartz glass layer, the crystallization accelerating component, such as aluminum or barium, does not contact with silicon melt or a carbon susceptor, contamination by eluting these metals does not occurs. Further, since the crystallization accelerating layer is not provided at the crucible bottom part, there is no danger to crack due to thermal distortion at a time of pulling up silicon single crystal and melt leakage does not occur. | 11-27-2008 |