MK ELECTRON CO., LTD. Patent applications |
Patent application number | Title | Published |
20150151386 | LEAD-FREE SOLDER, SOLDER PASTE AND SEMICONDUCTOR DEVICE - Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability. | 06-04-2015 |
20150072235 | POWDER MANUFACTURING APPARATUS AND ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY MANUFACTURED BY THE APPARATUS - Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state. | 03-12-2015 |
20150041707 | NEGATIVE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME - A negative active material for a secondary battery that provides high capacity, high efficiency charging and discharging characteristics includes: a silicon single phase; and a silicon-metal alloy phase by which the silicon single phase is bounded, wherein the negative active material comprises 5 to 30 wt % of nickel, 5 to 30 wt % of titanium, and 40 to 90 wt % of silicon, the negative active material has a first peak of the silicon-metal alloy phase in an X-ray diffraction analysis spectrum, the silicon single phase is finely distributed in the silicon-metal single phase by mechanical alloying, and the first peak resulting from the (501) surface of the silicon-metal alloy phase has a greater value than the first peak resulting from the (501) surface of the silicon-metal alloy phase that is not subjected to the mechanical alloying, by 0.6° to 0.9°. | 02-12-2015 |
20140284794 | TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A tin (Sn)-based solder ball having appropriate characteristics for electronic products and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.3 to 3.0 wt. % silver (Ag), about 0.4 to 0.8 wt. % copper (Cu), about 0.01 to 0.09 wt. % nickel (Ni), about 0.1% to 0.5 wt. % bismuth (Bi), and balance of tin (Sn) and unavoidable impurities. | 09-25-2014 |
20140203207 | ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME - An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains. | 07-24-2014 |
20140199594 | ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME - An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant. | 07-17-2014 |
20140023928 | ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME - An anode active material for a lithium secondary battery having a high capacity and a high efficiency of charge discharge characteristics. The anode active material includes a silicon mono-phase and an alloy phase formed of silicon with a metal element at least one selected from the group consisting of Ti, Ni, Cu, Fe, Mn, Al, Cr, Co, and Zn. The anode active material is a powder in which the silicon mono-phase is uniformly distributed in a matrix of the alloy phase, has particle size distribution defined as D0.1 and D0.9, and the value of D0.1-D0.9 is in a range from about 3 μm to about 15 μm. | 01-23-2014 |
20130175688 | TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A tin(Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver(Ag), about 0.1 to 1 wt. % copper(Cu), about 0.001 to 0.3 wt. % aluminum(Al), about 0.001% to 0.1 wt. % germanium(Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance. | 07-11-2013 |
20080308189 | LEAD FREE SOLDER CONTAINING Sn, Ag AND Bi - A lead free solder is provided. The lead free solder includes about 1.5 wt % to about 2.5 wt % silver (Ag), about 3 wt % to about 6 wt % bismuth (Bi), about 0.005 wt % to about 0.1 wt % of a deoxidizing agent, and a balance of tin (Sn). The lead free solder has improved wettability, a lowered melting point, little or substantially no formation of oxidation layer in a solder bath, suppressed brittleness, improved thermal shock resistance and drop resistance. | 12-18-2008 |
20080240975 | AG-BASED ALLOY WIRE FOR SEMICONDUCTOR PACKAGE - An Ag-based alloy wire for a semiconductor package is highly reliable and can be fabricated with low costs. The Ag-based alloy wire includes 0.05˜5 wt % of at least one kind of a first additive ingredient selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au), and nickel (Ni), and Ag as a remainder. | 10-02-2008 |
20080230915 | SEMICONDUCTOR PACKAGE USING WIRES CONSISTING OF Ag OR Ag ALLOY - A semiconductor package using Ag or Ag alloy wire which can maintain superior reliability against a noble metal and lower its manufacturing cost is provided. The semiconductor package comprises a semiconductor substrate. A semiconductor chip is attached to the package substrate and has one or more pads which comprise a noble metal. And one or more wires are bonded so as to electrically connect the one or more pads and the package substrate and comprise Ag or Ag alloy. | 09-25-2008 |