NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY Patent applications |
Patent application number | Title | Published |
20130154059 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses. | 06-20-2013 |
20100139762 | COMPOUND-TYPE THIN FILM, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE USING THE SAME - An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas. | 06-10-2010 |
20100101834 | INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM - An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable. | 04-29-2010 |
20100025821 | ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD - When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode. | 02-04-2010 |
20090311869 | SHOWER PLATE AND MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate | 12-17-2009 |