Hynix Semiconductor Inc. Patent applications |
Patent application number | Title | Published |
20150035578 | INTERNAL VOLTAGE COMPENSATION CIRCUIT - An internal voltage compensation circuit is provided which includes a power up signal generator configured to generate a power up signal, a select signal generator configured to compare a level of a first external voltage with a level of a second external voltage to generate first and second select signals, wherein the second select signal is generated in response to the power up signal, and a voltage compensation unit configured to electrically connect an internal voltage to the first external voltage or the second external voltage in response to the first and second select signals. | 02-05-2015 |
20130252174 | Method for Forming Fine Patterns of Semiconductor Device - A method for forming fine patterns of a semiconductor device employs a double patterning characteristic using a mask for forming a first pattern including a line pattern and a mask for separating the line pattern, and a reflow characteristic of a photoresist pattern. | 09-26-2013 |
20130244413 | Method for Fabricating a Semiconductor Device Having a Saddle Fin Transistor - A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug. | 09-19-2013 |
20130181761 | TRIMMING OF OPERATIVE PARAMETERS IN ELECTRONIC DEVICES BASED ON CORRECTIONS MAPPINGS - An embodiment of an electronic device having a plurality of operative parameters is provided. The electronic device includes means for applying a plurality of trimming actions to each parameter for causing a corresponding correction of the parameter, for at least one reference parameter, means for measuring the reference parameter responsive to the application of at least part of the trimming actions, and means for forcing the application of the selected trimming action for the reference parameter. For each non-reference parameter different from the at least one reference parameter, the electronic device includes means for selecting one of the trimming actions for the non-reference parameter corresponding to the selected trimming action for the at least one reference parameter, and means for forcing the application of the selected trimming action for each non-reference parameter. | 07-18-2013 |
20130181266 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In a method of fabricating a semiconductor device on a substrate having thereon a conductive layer, the conductive layer is patterned to form a plurality of opened regions. A gate insulation layer is formed on a side wall of each of the opened regions. A pillar pattern is formed in each opened region. On each pillar pattern, a gate electrode, which encloses the pillar pattern, is formed by removing the conductive layer between the pillar patterns. | 07-18-2013 |
20130178028 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - A semiconductor device having a vertical channel transistor and a method for manufacturing the same are provided. In the semiconductor device, a metal bit line is formed between vertical channel transistors, and the metal bit line is connected to only one of the vertical channel transistors through an asymmetric bit line contact. Through such a structure, the resistance of the bit line can be improved and the process margin for formation of the bit line can be secured. | 07-11-2013 |
20130170537 | DATA EQUALIZING CIRCUIT AND DATA EQUALIZING METHOD - A data equalizing circuit includes an equalizer configured to control a gain of data according to a value of a control code and output a controller gain; and a detection unit configured to divide n cycles of the data into N periods, count data transition frequencies for n/N periods while changing the value of the control code, calculate dispersion values of data transition frequencies for 1/N periods of the data from the data transition frequencies for the n/N periods, and finally output the value of the control code corresponding to a largest dispersion value, wherein n is equal to or greater than 2 and is set such that boundaries of the respective n/N periods of the data have different positions in the 1 UI data. | 07-04-2013 |
20130170536 | DATA EQUALIZING CIRCUIT AND DATA EQUALIZING METHOD - A data equalizing circuit includes an equalizer configured to output data according to a control code; and a detection unit configured to divide the data into N number of calculation periods, count data transition frequencies for the N calculation periods, calculate dispersion values of the data transition frequencies for the N calculation periods, and output the control code corresponding to a largest dispersion value, in response to a counting interruption signal and a counting completion signal, wherein n is equal to or greater than 2, N is greater than n, and the data is divided to n number of unit intervals (UI), and | 07-04-2013 |
20130155801 | SUB WORD LINE DRIVER AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A sub word line driver and a semiconductor integrated circuit device having the same are provided. The semiconductor integrated circuit device includes adjacent four sub word line drivers configured to drive four sub word lines in response to signals of four main word lines, wherein first and second sub word line drivers of adjacent sub word line drivers share one keeper transistor with each other, and third and fourth sub word line drivers of the adjacent sub word line drivers share one keeper transistor with each other. | 06-20-2013 |
20130154111 | SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME AND STACKED PACKAGE INCLUDING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a wafer having an upper surface and a lower surface, circuit layers formed on the upper surface and the lower surface of the wafer, respectively, and a through electrode formed to penetrate the wafer is presented. The through electrode can be configured to electrically coupled the circuit layers formed on the upper surface and the lower surface of the wafer. The semiconductor device can be stacked to form a stacked package. | 06-20-2013 |
20130147545 | REFERENCE VOLTAGE GENERATION CIRCUIT AND INTERNAL VOLTAGE GENERATION CIRCUIT USING THE SAME - A reference voltage generation circuit includes a current source configured to generate a current by compensating for an internal temperature change, and output the generated current to an output node where a reference voltage is generated, and a resistor unit coupled to the output node and having a resistance value controlled in response to a control signal generated in a test mode. | 06-13-2013 |
20130147544 | REFERENCE VOLTAGE GENERATION CIRCUIT AND INTERNAL VOLATAGE GENERATION CIRCUIT USING THE SAME - A reference voltage generation circuit configured to generate a reference voltage level that is compensated for based on an internal temperature change, where the reference voltage level is adjusted based on a resistance value controlled in response to a control signal. | 06-13-2013 |
20130142002 | Semiconductor Memory Apparatus - A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal. | 06-06-2013 |
20130141976 | Semiconductor Memory Apparatus - A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal. | 06-06-2013 |
20130135952 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF TESTING THE SAME - A semiconductor memory device including an open bit line structure is disclosed. The semiconductor memory device including an open bit line structure includes a first mat, a second mat contiguous to the first mat, a first sense amplifier coupled to a first bit line of the first mat, a second sense amplifier coupled to a second bit line of the first mat and a third bit line of the second mat, a third sense amplifier coupled to a fourth bit line of the second mat, and a plurality of bit line precharge voltage providers for varying a level of a bit line precharge voltage provided to the first, second, and third sense amplifiers, selectively providing the resultant bit line precharge voltage level, and providing the same voltage as that of data of a selected cell to a non-selected sense amplifier during a read operation. | 05-30-2013 |
20130135949 | SEMICONDUCTOR MEMORY APPARATUS, AND SET PROGRAM CONTROL CIRCUIT AND PROGRAM METHOD THEREFOR - A semiconductor memory apparatus includes a program pulse generation block configured to generate a first write control signal, second write control signal and a program completion signal in response to a programming enable signal; a set program control circuit configured to repeatedly generate a set programming enable signal a predetermined number of times in response to an erase command and the program completion signal; and a controller configured to disable the first write control signal in response to the erase command and generate the programming enable signal in response to the set programming enable signal. | 05-30-2013 |
20130135942 | PIPE LATCH CONTROL CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME - A pipe latch control circuit and a semiconductor integrated circuit using the same are provided. The pipe latch control circuit includes a read command control unit that receives a first signal and generates a read signal in response to a control signal. In the pipe latch control circuit, the read command control unit selects, in response to the control signal, the first signal or selects a second signal obtained by delaying the first signal according to an internal clock, and generates the selected first or second signal as the read signal. | 05-30-2013 |
20130135035 | ANTI-FUSE CONTROL CIRCUIT - An anti-fuse control circuit includes a first power supply voltage application unit, a second power supply voltage application unit and a control unit. The first power supply voltage application unit configured to selectively apply first power supply voltage to an output node in response to a power up signal. The second power supply voltage application unit configured to selectively apply second power supply voltage to the output node in response to a program signal. The control unit configured to control a connection between the output node and an anti-fuse in response to the power up signal when the program signal is inactivated. | 05-30-2013 |
20130128681 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a first switch, a second switch and a control unit. The first switch couples/separates a first bit line and a sense amplifier to/from each other in response to a first bit line separation signal. The second switch couples a second bit line and the sense amplifier to each other in response to a second bit line separation signal. The control unit generates a bit line separation signal for a refresh operation, of which enable period is shorter than that of the second bit line separation signal, and provides the generated bit line separation signal for the refresh operation to the second switch in the refresh operation. | 05-23-2013 |
20130127509 | EMI SHIELDING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME - An electromagnetic interference (EMI) shielding circuit and a semiconductor integrated circuit including the same are provided. The EMI shielding circuit includes a data level comparison unit, a control signal generation unit, and a driver for EMI cancellation. The data level comparison unit generates a data comparison signal by comparing a number of high-level data transmitted through a plurality of data lines and a number of low-level data transmitted through the plurality of data lines. The control signal generation unit generates a driving control signal in response to the data comparison signal. The driver for EMI cancellation outputs an EMI cancellation signal in response to the driving control signal. | 05-23-2013 |
20130121097 | ADDRESS OUTPUT CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a signal generation unit configured to generate a toggling signal and first and second pulse signals in response to a test signal and a burst pulse signal. An address output unit may be configured to receive first to fourth input addresses and output sequentially first to fourth output addresses in response to the toggling signal and the first and second pulse signals. A repair unit may be configured to perform a repair operation on a word line selected by the first to fourth output addresses. | 05-16-2013 |
20130119545 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed, which can protect a polysilicon layer of a bit line contact plug even when a critical dimension (CD) of the bit line is reduced by a fabrication change, thereby preventing defective resistivity caused by a damaged bit line contact plug from being generated. The semiconductor device includes one or more interlayer insulation film patterns formed over a semiconductor substrate, a bit line contact plug formed over the semiconductor substrate between the interlayer insulation films, and located below a top part of the interlayer insulation film pattern, and a bit line formed over the bit line contact plug. | 05-16-2013 |
20130119462 | SEMICONDUCTOR DEVICE FOR INCREASING BIT LINE CONTACT AREA, AND MODULE AND SYSTEM INCLUDING THE SAME - A semiconductor device including a buried gate is disclosed. In the semiconductor device, a bit line contact contacts a top surface and lateral surfaces of an active region, such that a contact area between a bit line contact and the active region is increased and a high-resistivity failure is prevented from occurring in a bit line contact. | 05-16-2013 |
20130119459 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed, which form a bit line only at one side of a line pattern by partially etching a semiconductor substrate in a vertical gate structure, such that a body tied structure for reducing the floating body effect can be implemented. A semiconductor device includes a line pattern formed over a semiconductor substrate, a bit line buried in a bottom part of one side of the line pattern, and a gate formed over the bit line, and located perpendicular to the bit line. | 05-16-2013 |
20130116948 | SEMICONDUCTOR SYSTEM INCLUDING DATA OUTPUT CIRCUIT - A semiconductor system includes a first semiconductor chip configured to perform a parallel test according to a first single chip parallel test signal and a multi-chip parallel test signal, and output first data that indicates if the first semiconductor chip passed or failed. A second semiconductor chip is also configured to perform the parallel test according to a second single chip parallel test signal and the multi-chip parallel test signal, and output second data that indicates if the first semiconductor chip passed or failed. | 05-09-2013 |
20130114362 | DATA TRANSMISSION CIRCUIT - A data transmission circuit includes an enable signal generation unit configured to receive a first enable signal and generate a second enable signal having a pulse width controlled according to a swing width of data inputted through a first data line, and a sense amplification unit configured to sense and amplify the data inputted through the first data line in response to the second enable signal, and transmit the amplified data to a second data line. | 05-09-2013 |
20130114358 | ADDRESS DECODING METHOD AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME - A semiconductor memory device includes: a strobe clock generator configured to generate a strobe clock signal having a delay time controlled according to a plurality of test mode signals which are selectively enabled in response to a read signal or write signal; an internal address generator configured to latch an address in response to a first level of the strobe clock signal, and generate an internal address by decoding the address in response to a second level of the strobe clock signal; and an output enable signal generator configured to decode the internal address and generate output enable signals which are selectively enabled. | 05-09-2013 |
20130114357 | SEMICONDUCTOR MEMORY APPARATUS, AND SUCCESSIVE PROGRAM CONTROL CIRCUIT AND PROGRAM METHOD THEREFOR - A semiconductor memory apparatus includes a program pulse generation block configured to generate write control signals and a program completion signal in response to a programming enable signal; a successive program control circuit configured to generate a successive programming enable signal in response to received program addresses and data count signals as a buffered program command or a buffered overwrite command; and a controller configured to generate the programming enable signal in response to the successive programming enable signal. | 05-09-2013 |
20130114356 | SEMICONDUCTOR MEMORY APPARATUS, AND DIVISIONAL PROGRAM CONTROL CIRCUIT AND PROGRAM METHOD THEREFOR - A semiconductor memory apparatus includes a program pulse generation block configured to generate write control signals and a program completion signal; a divisional program control circuit configured to generate a divisional programming enable signal according to a predetermined number of program division times, in response to the program completion signal; and a controller configured to generate the programming enable signal in response to the divisional programming enable signal. | 05-09-2013 |
20130114350 | SEMICONDUCTOR MEMORY DEVICE INCLUDING INITIALIZATION SIGNAL GENERATION CIRCUIT - An initialization signal generation circuit includes: an initialization signal output unit configured to generate an initialization signal which is enabled during at least a portion of an auto refresh operation period of the initialization mode, in response to a flag signal; a refresh signal generation unit configured to generate a preliminary refresh signal and a refresh counting signal having the same period as the auto refresh signal in response to the flag signal and an auto refresh signal; and a counter unit configured to count a counting signal in response to the refresh counting signal and generate a counting initialization signal, which is delayed by at least a pulse width of the refresh counting signal, after a time point where a combination of the counting signal becomes a preset combination. | 05-09-2013 |
20130114349 | SEMICONDUCTOR SYSTEM INCLUDING A CONTROLLER AND MEMORY - A semiconductor system includes three or more memory chips and a controller with first and second memory buffers configured to communicate with the three or more memory chips. The first and second memory buffers alternately transmit data to sequentially communicate with the three or more memory chips. | 05-09-2013 |
20130114348 | SELF REFRESH PULSE GENERATION CIRCUIT - A self refresh pulse generation circuit includes a control signal generator configured to generate a control signal asserted for an initial period of a self refresh mode, and a self refresh pulse generator configured to generate a self refresh pulse having a period controlled in response to the control signal, in the self refresh mode. | 05-09-2013 |
20130114347 | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR SYSTEM - A semiconductor system includes a semiconductor memory device configured to, during a test mode, store received data in a memory cell in response to a write command, read the stored data as information data in response to a read command, and internally store the information data, in response to the read command, in synchronization with a pulse generated when a level of the information data changes. | 05-09-2013 |
20130114331 | CONTROL SIGNAL GENERATION CIRCUIT AND SENSE AMPLIFIER CIRCUIT USING THE SAME - A control signal generation circuit includes a voltage detection unit which detects a level of an external voltage and generates first and second detection signals and a control signal control unit which delays a sense amplifier enable signal in response to the first and second detection signals and generates first through third control signals. The enable period of the first and second control signals are controlled based on the levels of the first and second detection signals. | 05-09-2013 |
20130114326 | SEMICONDUCTOR MEMORY APPARATUS AND TEST CIRCUIT THEREFOR - Disclosed is a semiconductor memory apparatus, including: a memory cell array configured to include a plurality of memory cells; a switching unit configured to be coupled to data input and output pads and control a data transfer path of data applied to the data input and output pads in response to a test mode signal; a write driver configured to drive data transferred from the switching unit and write the data in the memory cell array at a normal mode; and a controller configured to transfer the data from the switching unit to the memory cell at a test mode. | 05-09-2013 |
20130107654 | SEMICONDUCTOR MEMORY APPARATUS, HIGH VOLTAGE GENERATION CIRCUIT, AND PROGRAM METHOD THEREOF | 05-02-2013 |
20130107649 | SEMICONDUCTOR DEVICE INCLUDING TEST CIRCUIT AND BURN-IN TEST METHOD | 05-02-2013 |
20130107641 | SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE | 05-02-2013 |
20130107633 | NONVOLATILE MEMORY DEVICE AND READING METHOD THEREOF | 05-02-2013 |
20130106482 | SIGNAL DELAY CIRCUIT | 05-02-2013 |
20130106472 | INTEGRATED CIRCUIT | 05-02-2013 |
20130105875 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130105872 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130102114 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A technology is capable of simplifying a process of manufacturing an asymmetric device in forming a Tunneling Field Effect Transistor (TFET) structure. A method for manufacturing a semiconductor device comprises forming a conductive pattern over a semiconductor substrate, implanting impurity ions with the conductive pattern as a mask to form a first junction region in the semiconductor substrate, forming a first insulating film planarized with the conductive pattern over the first junction region, etching the top of the conductive pattern to expose a sidewall of the first insulating film, forming a spacer at the sidewall of the first insulating film disposed over the conductive pattern, etching the conductive pattern with the spacer as an etching mask to form a gate pattern, and forming a second junction region in the semiconductor substrate with the gate pattern as a mask. | 04-25-2013 |
20130100753 | DATA TRANSMISSION CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME - A data transmission circuit includes a read data transmission unit configured to, when a read signal is asserted, detect and amplify a voltage level of a first data line, transmit an amplified voltage level to a second data line, and substantially prevent a voltage level of the second data line from being amplified to be substantially equal to or more than a preset voltage level, and a write data transmission unit configured to transmit the voltage level of the second data line to the first data line when a write signal is asserted. | 04-25-2013 |
20130100728 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part. | 04-25-2013 |
20130099388 | STACKED SEMICONDUCTOR PACKAGE - A stacked semiconductor package includes a first semiconductor chip having one surface, and an other surface which faces away from the one surface, and first through electrodes which pass through the one surface and the other surface and project out of the other surface; a second semiconductor chip stacked over the one surface of the first semiconductor chip and having second through electrodes which are connected with the first through electrodes; a heat dissipation member disposed over the second semiconductor chip; and a first heat absorbing member disposed to face the other surface of the first semiconductor chip and defined with through holes into which projecting portions of the first through electrodes are inserted. | 04-25-2013 |
20130099298 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises a buried gate formed in a mat and in an adjacent dummy region. A space larger than is conventional is formed in a dummy region of a mat edge where the buried gate is to be created. This larger space inhibits shortening of an end of a buried gate and reduction in pattern size attributable to lithographic distortion arising between patterned (mat) and unpatterned (dummy) regions. Device reliability is thereby improved by avoiding gap-fill defects of a gate material. | 04-25-2013 |
20130099235 | SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING STACK PACKAGE USING THE SAME - A semiconductor wafer includes a plurality of semiconductor chips having bonding pads; and a connection wiring line coupling the plurality of semiconductor chips such that a test signal, which is inputted through bonding pads of an arbitrary semiconductor chip among the plurality of semiconductor chips, is transmitted to bonding pads of other semiconductor chips among the plurality of semiconductor chips. | 04-25-2013 |
20130094316 | MEMORY SYSTEM - A memory system includes: a controller configured to provide a hidden auto refresh command; and a memory configured to perform a refresh operation in response to the hidden auto refresh command. The controller and the memory communicate with each other so that each refresh address of the controller and the memory has the same value as each other. | 04-18-2013 |
20130094304 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a driving voltage generation unit configured to generate a driving voltage of a core bias line included in a memory cell current path; a comparison unit configured to compare a voltage level of the core bias line with a predetermined limit level in response to a virtual negative read signal; and a compensation driving unit configured to compensation-drive the core bias line in response to an output signal of the comparison unit. | 04-18-2013 |
20130094277 | RESISTIVE MEMORY APPARATUS, LAYOUT STRUCTURE, AND SENSING CIRCUIT THEREOF - Provided is a resistive memory apparatus including a plurality of memory areas each including a main memory cell array coupled to a plurality of word lines and a reference cell array coupled to a plurality of reference word lines. Each of the memory areas shares a bit line driver/sinker with an adjacent memory area. | 04-18-2013 |
20130093490 | INTERNAL VOLTAGE GENERATION CIRCUIT AND METHOD - An internal voltage generation method includes the steps of: setting first to third sections by using a reference voltage; determining to which section an internal voltage level corresponds, among the first to third sections; and generating the internal voltage by controlling a voltage pumping amount according to a section corresponding to the internal voltage level. | 04-18-2013 |
20130093472 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a driving unit, a first current path and a second current path. The driving unit applies a power supply voltage to a drive node in response to a control signal. The first current path couples the drive node and an output node. The second current path couples the drive node and the output node. The first current path and the second current path are coupled in parallel between the drive node and the output node. | 04-18-2013 |
20130093099 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus having first and second chips stacked upon each other includes first, second and third through vias positioned on a same vertical lines in the first and second chips and formed through the first and second chips. A first input/output circuit connected with the second through via of the first chip. A second input/output circuit connected with the second through via of the second chip. The second through via of the second chip is connected with the first through via of the first chip. | 04-18-2013 |
20130092936 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes first and second vias, a first circuit unit, a second circuit unit and a third circuit unit. The first and second vias electrically connect a first chip and a second chip with each other. The first circuit unit is disposed in the first chip, receives test data, and is connected with the first via. The second circuit unit is disposed in the first chip, and is connected with the second via and the first circuit unit. The third circuit unit is disposed in the second chip, and is connected with the first via. The first circuit unit outputs an output signal thereof to one of the first via and the second circuit unit in response to a first control signal. | 04-18-2013 |
20130089976 | FUSE STRUCTURE FOR HIGH INTEGRATED SEMICONDUCTOR DEVICE - The present invention provides a technology capable of improving an operation reliability of a semiconductor device. Particularly, a fuse material which constitutes the copper can be prevented from migrating being locked in the recesses or the grooves after a blowing process. A semiconductor device includes an insulating layer including a concave-convex-shaped upper part; and a fuse formed on the insulating layer. | 04-11-2013 |
20130087919 | LIGHTWEIGHT AND COMPACT THROUGH-SILICON VIA STACK PACKAGE WITH EXCELLENT ELECTRICAL CONNECTIONS AND METHOD FOR MANUFACTURING THE SAME - A through-silicon via stack package contains package units. Each package unit includes a semiconductor chip; a through-silicon via formed in the semiconductor chip; a first metal line formed on an upper surface and contacting a portion of a top surface of the through-silicon via; and a second metal line formed on a lower surface of the semiconductor chip and contacting a second portion of a lower surface of the through-silicon via. When package units are stacked, the second metal line formed on the lower surface of the top package unit and the first metal line formed on the upper surface of the bottom package unit are brought into contact with the upper surface of the through-silicon via of the bottom package unit and the lower surface of the through-silicon via of the top package unit, respectively. The stack package is lightweight and compact, and can form excellent electrical connections. | 04-11-2013 |
20130087853 | SEMICONDUCTOR DEVICE HAVING SADDLE FIN TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - The present invention discloses a transistor having the saddle fin structure. The saddle fin transistor of the present invention has a structure in which a landing plug contact region, particularly, a landing plug contact region on an isolation layer is elevated such that the landing plug contact SAC (Self Aligned Contact) fail can be prevented. | 04-11-2013 |
20130087847 | Nonvolatile Memory Device - Patterns of a nonvolatile memory device include a semiconductor substrate that defines active regions extending in a longitudinal direction, an isolation structure formed between the active regions, a tunnel insulating layer formed on the active regions, a charge trap layer formed on the tunnel insulating layer, a first dielectric layer formed on the charge trap layer and the isolation structure, wherein the first dielectric layers is extended along a lateral direction, a control gate layer formed on the first dielectric layer, wherein the control gate layer is extended along the lateral direction, and a second dielectric layer formed on a sidewall of the control gate layer along the lateral direction and coupled to the first dielectric layer. | 04-11-2013 |
20130083616 | TEMPERATURE DETECTION CIRCUIT OF SEMICONDUCTOR MEMORY APPARTUS - A temperature detection circuit of a semiconductor memory apparatus includes a fixed period oscillator, a temperature variable signal generating unit and a counting unit. The oscillator is configured to generate a fixed period oscillator signal when an enable signal is enabled. The temperature variable signal generating unit is configured to generate a temperature variable signal whose enable interval varies based on temperature variations, when the enable signal is enabled. The counting unit is configured to count the oscillator signal during the enable interval of the temperature variable signal to generate a temperature information signal. | 04-04-2013 |
20130083596 | NONVOLATILE MEMORY DEVICE - Embodiments of present invention relate to a nonvolatile memory device that includes a first page buffer controlling any one of a first even bit line and a first odd bit line; a second page buffer controlling any one of a second even bit line and a second odd bit line; wherein the second page buffer operates the second odd bit line according to program when the first page buffer operates the first even bit line according to program, and the second page buffer operates the second even bit line according to program when the first page buffer operates the first odd bit line according to program. | 04-04-2013 |
20130078794 | CHARGE TRAP TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a charge trap type non-volatile memory device and a method for fabricating the same, the charge trap type non-volatile memory device including: a tunnel insulation layer formed over a substrate; a charge trap layer formed over the tunnel insulation layer, the charge trap layer including a charge trap polysilicon thin layer and a charge trap nitride-based layer; a charge barrier layer formed over the charge trap layer; a gate electrode formed over the charge barrier layer; and an oxide-based spacer formed over sidewalls of the charge trap layer and provided to isolate the charge trap layer. | 03-28-2013 |
20130078782 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device prevents a lower electrode from leaning, in a dip-out process of an interlayer insulation film forming a lower electrode. A conductive material of a lower electrode is used as a support layer instead of a conventional nitride film support layer. This prevents a crack from being generated in a nitride film support layer. A method for manufacturing the semiconductor device is also disclosed. | 03-28-2013 |
20130077423 | REFRESH METHOD AND APPARATUS FOR A SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a bit line sense amplifier configured to sense and amplify data of a first bit line coupled to a first memory cell of a first cell block when a refresh operation is performed on the first cell block, and sense and amplify data of a second bit line coupled to a second memory cell of a second cell block when a refresh operation is performed on the second cell block. A first switch may be configured to block coupling between the first bit line and the bit line sense amplifier when a refresh operation is performed on the second cell block and a second switch may be configured to block coupling between the second bit line and the bit line sense amplifier when a refresh operation is performed on the first cell block. | 03-28-2013 |
20130077407 | NONVOLATILE MEMORY DEVICE, PROGRAM METHOD THEREOF, AND DATA PROCESSING SYSTEM INCLUDING THE SAME - A program method of a nonvolatile memory device includes a pre-program verify step for verifying a threshold voltage of a selected memory cell; a step of setting a bit line voltage of the selected memory cell according to the threshold voltage of the selected memory cell which is determined through the pre-program verify step; a step of applying a program voltage to the selected memory cell set with the bit line voltage; and a post-program verify step for verifying a programmed state of the selected memory cell applied with the program voltage. | 03-28-2013 |
20130077399 | SYSTEM, SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A method for operating a semiconductor memory device including a memory block constituted by first memory cells used as main memory cells and second memory cells includes reading out an erase count of the memory block stored in the second memory cells, erasing the memory block, increasing the read-out erase count, and storing the increased erase count in the second memory cells. | 03-28-2013 |
20130077373 | NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF - In a method of operating a nonvolatile memory device, at least one among memory cell blocks of the nonvolatile memory device is designated as a content addressable memory (CAM) block which includes a plurality of CAM cells coupled to respective word lines of the nonvolatile memory device. Chip information for operations of the nonvolatile memory device is stored in the CAM cells which are coupled to a selected word line, whereas the remaining CAM cells of the CAM block are in an erased state. | 03-28-2013 |
20130076399 | COMPARISON CIRCUIT AND IMPEDANCE CALIBRATION CIRCUIT USING THE SAME - A comparison circuit includes: an offset removal unit configured to store offset information of a comparator in response to a reference voltage, and compare a pad voltage with the reference voltage based on the offset information to drive a first node; and a comparison signal output unit configured to buffer a signal of the first node and output a comparison signal. | 03-28-2013 |
20130071985 | PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND FABRICATION METHOD THEREOF - A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend in parallel with a constant space. The heating electrodes are electrically connected to the plurality of word lines. The interlayer insulating layer insulates the heating electrodes. The phase change lines extend in a direction orthogonal to the word line and are electrically connected to the heating electrodes. Curves are formed on a surface of the interlayer insulating layer between the word lines such that the effective length of the phase change layer between adjacent heating electrodes is larger than the physical distance between the adjacent heating electrodes. | 03-21-2013 |
20130071778 | EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME - An extreme ultraviolet (EUV) mask includes a quartz substrate including an absorption region and a reflection region, first and second multi-layered thin films formed on the quartz substrate, and a structure pattern disposed between the first and second multi-layered thin films. | 03-21-2013 |
20130069226 | SEMICONDUCTOR PACKAGE HAVING INTERPOSER - A semiconductor package includes a first structural body having a first surface and a second surface which faces away from the first surface, and formed with first connection members on the first surface; a second structural body placed over the first structural body, and formed with second connection members on a surface thereof which faces the first surface of the first structural body; and an interposer interposed between the first structural body and the second structural body, and having a body which is formed with openings into which the first connection members and the second connection members are inserted and a conductive layer which is formed to fill the openings. | 03-21-2013 |
20130059237 | METHOD FOR FABRICATING A PHOTOMASK FOR EUV LITHOGRAPHY - A photomask for extreme ultraviolet (EUV) lithography includes: a substrate; a reflection layer disposed over the substrate and reflecting EUV light incident thereto; and an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer and comprising a material having an extinction coefficient (k) to EUV radiation higher than that tantalum (Ta). | 03-07-2013 |
20130058007 | METHOD FOR FORMING A CAPACITOR DIELECTRIC AND METHOD FOR MANUFACTURING A CAPACITOR USING THE CAPACITOR DIELECTRIC - A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase. | 03-07-2013 |
20130051165 | SEMICONDUCTOR APPARATUS AND DATA TRANSMISSION METHOD THEREOF - A semiconductor apparatus includes a normal data line, an auxiliary data line and a data line selection unit. The normal data line is connected with a data selection unit. The auxiliary data line is connected with the data selection unit. The data line selection unit outputs data to one of the normal data line and the auxiliary data line in response to a command signal. | 02-28-2013 |
20130051157 | SEMICONDUCTOR MEMORY DEVICE AND REFRESH METHOD THEREOF - A semiconductor memory device includes a memory core configured to sequentially activate first and second banks in response to first and second bank active signals which are sequentially enabled in response to first and second enable signals when a self-refresh operation is to be performed, select a word line by row addresses, and perform a refresh operation for memory cells which are connected with the word line; and an address counter configured to perform a counting operation for the row addresses in response to a counter signal, and interrupt the counting operation for the row addresses in a case where both the first and second banks are not activated when the self-refresh operation is ended. | 02-28-2013 |
20130049729 | SEMICONDUCTOR CIRCUIT FOR OUTPUTTING REFERENCE VOLTAGES - A semiconductor circuit includes a control signal generation circuit configured to generate control signals in response to a voltage characteristic determination signal and a reference voltage generation circuit configured to output a main reference voltage, having one of a first characteristic of being proportional to temperature, a second characteristic of being constant irrespective of temperature, and a third characteristic of being inversely proportional to temperature, in response to the control signals. | 02-28-2013 |
20130041612 | INTERNAL CONTROL SIGNAL REGURATION CIRCUIT - An internal control signal regulation circuit includes a programming test unit configured to detect an internal control signal in response to an external control signal and generate a selection signal, test codes and a programming enable signal; and a code processing unit configured to receive the test codes or programming codes in response to the selection signal and regulate the internal control signal. | 02-14-2013 |
20130040425 | SPIRAL STAIRCASE SHAPED STACKED SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A spiral staircase shaped stacked semiconductor package is presented. The package includes a semiconductor chip module, a substrate and connection members. The semiconductor chip module includes at least two semiconductor chips which have chip selection pads and through-electrodes. The semiconductor chips are stacked such that the chip selection pads are exposed and the through-electrodes of the stacked semiconductor chips are electrically connected to one another. The substrate has the semiconductor chip module mounted thereto and has connection pads. The connection members electrically connect the chip selection pads to respective connection pads. | 02-14-2013 |
20130037939 | SEMICONDUCTOR PACKAGE AND STACK-TYPE SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor package includes a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface; a dielectric layer formed on one or more of the first surface and the second surface and formed with grooves around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip; through-silicon vias filling the through holes; and bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves. | 02-14-2013 |
20130037938 | EMBEDDED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump. | 02-14-2013 |
20130037930 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor chip includes a body part having a first surface and a second surface facing away from the first surface, and an opening passing from the first surface to the second surface of the body part. | 02-14-2013 |
20130034121 | SEMICONDUCTOR MEMORY DEVICE INCLUDING TEMPERATURE TEST CIRCUIT - A semiconductor memory device includes: a temperature sensor configured to select first and second selection reference voltages selected in a test mode as an input reference voltage according to first and second counting signals which are sequentially counted, compare the selected input reference voltage with a level of a variable voltage which changes according to internal temperature, and generate a temperature flag signal containing information on the internal temperature; and a temperature test circuit configured to output the first and second counting signals at a time point where a level of the temperature flag signal changes. | 02-07-2013 |
20130033952 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a reference voltage generation unit configured to generate first and second reference voltages, wherein a level of the first reference voltage increases with decreasing internal temperature, and a level of the second reference voltage decreases with decreasing internal temperature; and a level control unit configured to control an internal voltage in response to the first and second reference voltages so as to decrease the absolute value of the internal voltage. | 02-07-2013 |
20130033949 | DATA CONTROL CIRCUIT - The data control circuit includes an input/output line and a driver. The input/output line precharging circuit precharges a global input/output line to a predetermined voltage when either a reading operation or a writing operation is inoperative. The driver includes a number of MOS transistors and drives the global input/output line in response to receiving data from a local input/output line and a complementary local input/output line during the reading operation. | 02-07-2013 |
20130033944 | INTERNAL VOLTAGE GENERATION CIRCUIT - An internal voltage generation circuit includes: a selection unit configured to select one of first and second reference voltages as a selection reference voltage in response to a self refresh signal and a power-down mode signal and output the selection reference voltage; a driving signal generation unit configured to compare the selection reference voltage with a negative word line voltage applied to an unselected word line and generate a driving signal; and a driving unit configured to change the negative word line voltage in response to the driving signal. | 02-07-2013 |
20130033943 | DATA INPUT/OUTPUT CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE - A data input/output circuit includes: an amplification unit configured to generate a data signal by amplifying data of a first input/output line coupled to a bank during a read operation, and generate a driving signal by amplifying data of a second input/output line coupled to a data input/output pad during a write operation; a read driving unit configured to drive the second input/output line in response to the data signal during the read operation; and a write driving unit configured to drive the first input/output line in response to the driving signal during the write operation. | 02-07-2013 |
20130033942 | SYSTEM-IN PACKAGE INCLUDING SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DETERMINING INPUT/OUTPUT PINS OF SYSTEM-IN PACKAGE - A semiconductor memory device includes an internal clock generation unit configured to generate an internal clock including periodic pulses during a period of a test mode; a DQ information signal generation block configured to generate DQ information signals which are sequentially enabled, in response to the internal clock; and a data output block configured to output the DQ information signals to DQ pads during a period of the test mode. | 02-07-2013 |
20130032879 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one another in a zigzag pattern. As a result, the semiconductor device easily guarantees an electrical passage between the semiconductor substrate and the vertical pillars, such that it substantially prevents the floating phenomenon from being generated, resulting in the prevention of deterioration of the semiconductor device. | 02-07-2013 |
20130032691 | IMAGE SENSOR - An image sensor for reducing a sampling time by shortening a stabilization duration is provided. The image sensor includes a pixel unit, a sampling unit sampling a signal from an output node of the pixel unit, a sinking unit sinking current from the output node of the pixel unit, and a current controller controlling the amount of current in the sinking unit. | 02-07-2013 |
20130029458 | SUBSTRATE FOR SEMICONDUCTOR PACKAGE HAVING COATING FILM AND METHOD FOR MANUFACTURING THE SAME - A substrate for a semiconductor package includes a ball land disposed on one surface of an insulating layer. A solder resist is applied to the surface of insulating layer while leaving the ball land exposed. A coating film is applied on the exposed surface of the ball land. The coating film includes a high molecular compound having metal particles. In the substrate having the ball land with the coating film formed thereon, it is not necessary to subject the substrate to a UBM formation process. | 01-31-2013 |
20130027076 | APPARATUS FOR DETECTING PATTERN ALIGNMENT ERROR - An apparatus for detecting pattern alignment error includes a first conductive pattern disposed over a first insulation member with a power source applied of the first conductive pattern; a second insulation member for covering the first conductive pattern; a second conductive pattern disposed on the second insulation member; a conductive via connected to the second conductive pattern and passing through the second insulation member; and an insulation pattern disposed in the first to conductive pattern for detecting an alignment error in response to a position of the conductive via. The apparatus for detecting pattern alignment error can detect the alignment of lower wiring in a device with multi-layer wiring | 01-31-2013 |
20130026651 | SEMICONDUCTOR PACKAGE AND STACKED SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor package includes a substrate having a substrate body possessing a first region, a second region which is defined around the first region and a third region which is defined around the second region. Wiring lines are placed on the substrate body, and the wiring lines have first ends that extend to the third region. Connection patterns are placed in the third region and are electrically connected to the first ends of the wiring lines. A to semiconductor chip is disposed in the first region and is electrically connected to the respective wiring lines, and a molding member is disposed in the first and second regions and covers the semiconductor chip. | 01-31-2013 |
20130026549 | SEMICONDUCTOR INTEGRATED CIRCUIT HAVING CAPACITOR FOR PROVIDING STABLE POWER AND METHOD OF MANUFACTURING THE SAME - A capacitor and a method of manufacturing the same are provided. A dummy capacitor group is formed in the peripheral circuit area and includes a dummy storage node contact unit, a dielectric, and a dummy plate electrode. A metal oxide semiconductor (MOS) capacitor is formed in the peripheral circuit area and connected to the dummy capacitor group in parallel. Capacitance of the dummy capacitor group may be greater than that of the MOS capacitor. | 01-31-2013 |
20130022744 | METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS - A noble metal layer is formed using ozone (O | 01-24-2013 |
20130020683 | SUBSTRATE FOR SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor package includes a substrate including a substrate body having a first face and a second face opposing the first face. A first through electrode passes through the substrate body between the first face and the second face. An insulation member is disposed over the first face; and a connection member having a first conductive unit disposed inside of the insulation member is electrically connected to the first through electrode, and a second conductive unit electrically connected to the first conductive unit is exposed at side faces of the insulation member. A semiconductor chip having third and fourth faces is disposed over the first face of the substrate body in a vertical direction. A second through electrode passes through the substrate body between the third and fourth faces and is electrically connected to the second conductive unit. | 01-24-2013 |
20130020619 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is disclosed, which reduces a step difference between a peripheral region and a cell region. In the semiconductor device, a metal contact of the peripheral region is configured in a multi-layered structure. Prior to forming a bit line and a storage node contact in the cell region, a contact and a line are formed in the peripheral region, such that a step difference between the cell region and the peripheral region is reduced, resulting in a reduction in parasitic capacitance between lines. | 01-24-2013 |
20130005130 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode. | 01-03-2013 |
20130002342 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes first and second chips sharing first and second data channels. The first and second chips output normal data of the respective chips through the first and second data channels in a normal operation, and the first chip outputs test data of the first chip through the first data channel, and the second chip outputs test data of the second chip through the second data channel in a test operation. | 01-03-2013 |
20130002323 | DUTY CYCLE CORRECTION CIRCUIT - A duty cycle correction circuit includes a duty correction block configured to generate a first pre-corrected signal and a second pre-corrected signal in response to a duty code and an input signal; a duty-corrected signal generation block configured to generate a duty-corrected signal in response to a first select signal, a second select signal, the first pre-corrected signal and the second pre-corrected signal; and a control block configured to generate the duty code, the first select signal and the second select signal in response to the duty-corrected signal and the input signal. | 01-03-2013 |
20130002276 | SEMICONDUCTOR APPARATUS AND TESTING METHOD THEREOF - A semiconductor apparatus includes a through via and a comparison unit. The through via is electrically connected with another chip. The comparison unit includes a reference capacitor, and compares a capacitance value of the through via and a capacitance value of the reference capacitor in response to a test start signal and a reset signal and generates a comparison result. | 01-03-2013 |
20130001744 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor device, a polysilicon layer of a lower electrode contact plug is removed by a strip process such that the deposition area of a dielectric film is increased and capacitance of a capacitor is assured. A method for manufacturing the semiconductor device is also disclosed. | 01-03-2013 |
20130001548 | SEMICONDUCTOR APPARATUS AND STACKED SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal. | 01-03-2013 |
20120327731 | SEMICONDUCTOR MEMORY APPARATUS AND BIT LINE EQUALIZING CIRCUIT - A semiconductor memory apparatus comprise s bit line sense amplifier unit, and a pair of precharge elements coupled in series between a first bit line and a second bit line and having an asymmetrical contact resistance ratio. | 12-27-2012 |
20120326775 | CHIP SELECT CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME - A chip select circuit includes a chip select identification unit, a chip select control unit and a data input unit. The chip select identification unit generates a chip select identification signal in response to a chip select enable signal and an address signal. The chip select control unit provides the chip select identification signal as a chip select signal or provides a signal fixed to a predetermined level as the chip select signal, in response to a test mode signal. The data input unit receives data in response to the chip select signal. | 12-27-2012 |
20120322216 | METHOD FOR REDUCING POLY-DEPLETION IN DUAL GATE CMOS FABRICATION PROCESS - Disclosed is a method for reducing poly-depletion in a dual gate CMOS fabrication process. The method reduces the poly-depletion in a dual gate CMOS fabrication process by increasing the doping efficiency in a gate polysilicon film. In order to increase the doping efficiency, the method employs the following four technical principles. First, the doping efficiency is increased when the dose of N+ ion implantation is increased. Second, the doping efficiency is increased when the thickness of N+ polysilicon is reduced. Third, the increase of depletion caused by the reduction of the channel width is inhibited when the EFH is adjusted to be less than 0. Fourth, the overall doping efficiency is increased when each step of polysilicon deposition and ion implantation is divided into multiple steps. | 12-20-2012 |
20120320676 | SEMICONDUCTOR SYSTEM, NONVOLATILE MEMORY APPARATUS, AND AN ASSOCIATED READ METHOD - A semiconductor system includes a host configured to output a command, a control signal, an address signal, and data; and a nonvolatile memory apparatus configured to receive at least one of the command, the control signal, the address signal, and the data from the host, to provide a process result to the host, and to determine data levels of memory cells included in an overlap section of memory cell threshold voltage distributions based on an initial read bias voltage. | 12-20-2012 |
20120319195 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material. | 12-20-2012 |
20120319186 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for forming a memory device includes: forming a tunnel insulation layer, a conductive layer for a floating gate electrode, a charge blocking layer and a conductive layer for a control gate electrode over a substrate; and selectively etching the conductive layer for the control gate electrode, the charge blocking layer and the conductive layer for the floating gate electrode, thereby forming a plurality of gate lines, a plurality of select lines and at least two dummy lines disposed in a gap region between adjacent select lines, wherein the gate lines, the select lines and the dummy lines together construct strings. | 12-20-2012 |
20120314519 | WORD LINE DRIVING SIGNAL CONTROL CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME, AND WORD LINE DRIVING METHOD - A word line driving signal control circuit of a semiconductor memory apparatus provided with a sub-redundancy cell array includes a fuse unit configured to generate a redundancy enable signal in response to a bank active signal and an address signal, and a repair determination unit configured to activate one of a normal word line driving signal, a redundancy word line driving signal, and a sub-redundancy word line driving signal in response to the bank active signal and the redundancy enable signal. | 12-13-2012 |
20120313679 | PUMP CIRCUIT AND METHOD FOR PUMPING VOLTAGE IN SEMICONDUCTOR APPARATUS - A pump circuit includes a first clock generation unit, a second clock generation unit and a pumping stage unit. The first clock generation unit is configured to generate a first clock with a first amplitude by using an input clock and an external voltage. The second clock generation unit is configured to generate a second clock with a second amplitude larger than the first amplitude by using the input clock and an amplified voltage generated by amplifying the external voltage. The pumping stage unit is configured to increase an input voltage using the first clock and the second clock and generate amplified output voltages. | 12-13-2012 |
20120313183 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a transistor of a semiconductor device comprises: forming a gate in a NMOS region and a PMOS region of a semiconductor substrate; forming a gate spacer on a sidewall of the gate; performing an ion implantation process on the NMOS region to form a junction region in the NMOS region; depositing an oxide film on the entire surface of the semiconductor substrate including the gate; removing hydrogen (H) existing in the oxide film and the gate spacer; and removing the oxide film in the PMOS region and performing a ion implantation process on the PMOS region to form a junction region in the PMOS region. | 12-13-2012 |
20120306674 | AUTOMATIC OFFSET ADJUSTMENT FOR DIGITAL CALIBRATION OF COLUMN PARALLEL SINGLE-SLOPE ADCS FOR IMAGE SENSORS - Various embodiments of the present invention include enabling, during a calibration phase, a counter to count one less than a number of clock periods associated with a determined offset. The counted number of the clock periods is stored in calibration memory. In a conversion phase, inverted outputs are loaded from the calibration memory to the counter, where the counter is enabled to count the clock periods to determine a digital equivalent value of an analog signal amplitude. | 12-06-2012 |
20120306470 | DOWN-CONVERTING VOLTAGE GENERATING CIRCUIT - A down-converting voltage generating circuit includes a reference voltage providing unit, an initial setting unit, a driving unit, and a driving force control unit. The reference voltage providing unit provides a reference voltage to a first node. The initial setting unit drops a voltage level of the first node to substantially a level of a ground voltage when an initial setting signal is activated. The driving unit drives a down-converted voltage derived from an external voltage in response to the voltage level of the first node. The driving force control unit is connected to the driving unit, and controls a driving force for driving the down-converted voltage of the driving unit in response to the initial setting signal. | 12-06-2012 |
20120306057 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is disclosed. In the method for manufacturing the semiconductor device, a capacitor structure is modified to ensure capacitance of the capacitor, and the height of the capacitor is reduced to prevent defects such as a leaning capacitor or a poor bridge from being generated, such that the fabrication process of semiconductor devices is simplified and therefore the semiconductor devices can be stably manufactured. | 12-06-2012 |
20120306008 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises forming a buried gate after forming an active region to have a line type. The buried gate comprises an operation gate and a non-operation gate. A height of a gate electrode layer (conductive material) of the non-operation gate is formed to be lower than that of a gate electrode layer of the operation gate, thereby increasing a threshold voltage and preventing an overlap of the ion-implanted active region with the non-operation gate. As a result, a Gate Induced Drain Leakage (GIDL) is prevented to improve a refresh characteristic of the semiconductor device. | 12-06-2012 |
20120302024 | SEMICONDUCTOR DEVICE WITH STRAINED CHANNEL AND METHOD OF FABRICATING THE SAME - A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern. | 11-29-2012 |
20120300565 | SKEW SIGNAL GENERATOR AND SEMICONDUCTOR MEMORY DEVICE - A skew signal generator is provided which comprises a fuse signal generating unit for generating a plurality of fuse signals, and an encoder for generating skew signals including skew information of a wafer by encoding the fuse signals. | 11-29-2012 |
20120300557 | SEMICONDUCTOR CELL AND SEMICONDUCTOR DEVICE - A technology is a semiconductor cell and a semiconductor device capable of reducing the coupling capacitance between adjacent bit lines by forming a bit line junction region in a separated island shape when forming a buried bit line, thereby improving characteristics of the semiconductor devices. The semiconductor cell includes a transistor including a gate and a gate junction region, a plurality of buried bit lines disposed to intersect the gate, and a plurality of bit line junction regions, each bit line junction region having an island shape formed between the buried bit lines and connected to the buried bit line. | 11-29-2012 |
20120295432 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes forming an interlayer insulating layer over the semiconductor substrate of a cell region, and forming gate structures over the semiconductor substrate of a peripheral region. Reserved bit line regions are formed in the cell region by etching the interlayer insulating layer, and gates are formed by etching the gate structures in the peripheral region. A capping insulating layer and an isolation layer are formed over the reserved bit line regions and the gates, the isolation layer of the cell region is removed, and an etch-back process is performed on the capping insulating layer, and bit lines are formed in the respective reserved bit line regions. Semiconductor device yields can be enhanced because patterns having a fine critical dimension can be formed in peripheral regions with an increased degree of integration. | 11-22-2012 |
20120294082 | Semiconductor Device - A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line. | 11-22-2012 |
20120293225 | DUTY CORRECTION CIRCUIT - A duty correction circuit includes a clock buffer configured to buffer an input clock and generate a buffer clock, a swing level conversion block configured to generate an internal clock, which transitions to levels of a sync voltage and a power supply voltage, in response to a voltage level of the buffer clock, a duty control block configured to generate duty information and frequency information by using a high pulse width and a low pulse width of the internal clock, and a current control block configured to control a time point, at which a logic value of the buffer clock transitions, in response to the duty information and the frequency information. The current control block includes a plurality of first current paths coupled in parallel to one another in order to control the time point at which the logic value of the buffer clock transitions. | 11-22-2012 |
20120292787 | STACKED SEMICONDUCTOR PACKAGE - A stacked semiconductor package includes a substrate having an upper surface and a lower surface, and divided into a first region and a second region that adjoins the first region; a support member formed in the second region on the upper surface of the substrate; and a semiconductor chip module including a plurality of semiconductor chips each of which has bonding pads near one edge of a first surface thereof and which are stacked on the support member in a step-like shape such that their bonding pads face the first region and are bent such that the bonding pads are electrically connected with the substrate. | 11-22-2012 |
20120292690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a storage node contact plug, a bit line in communication with to the storage node contact plug, and an expansion unit formed on a sidewall of the bit line. Thermal expansion of the expansion unit serves to increase capacitance by ensuring a distance between the bit line and the storage node contact plug, thereby improving a sensing margin. A cell characteristic such as a record recovery time (tWR) may be enhanced. | 11-22-2012 |
20120289051 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is provided. According to an embodiment, the method includes forming a layer to be etched on a semiconductor substrate, and forming a photoresist pattern on the layer to be etched. A block copolymer including a hydrophobic radical and a hydrophilic radical is formed in the photoresist pattern, and the block copolymer is assembled to allow a polymer having the hydrophobic radical to be formed in a pillar pattern within a polymer having the hydrophilic radical. The polymer having the hydrophobic radical is then selectively removed. | 11-15-2012 |
20120289024 | METHOD FOR FORMING THE SEMICONDUCTOR CELL - A semiconductor cell includes first trenches defining fin type active regions within the semiconductor substrate and adjacent to each other, second trenches disposed at one side and the other side of the first trenches, adjacent to the first trench and including fin type active regions, a first oxide layer formed on each of surfaces of the first trenches, and a second oxide layer formed on each of surfaces of the second trenches and having a thicker thickness than the first oxide layer. Although the critical dimension of the fin is increased, the gate drivability can be improved. | 11-15-2012 |
20120287735 | CURRENT CONTROL CIRCUIT - A current control device is disclosed, which reduces a standby current of a semiconductor memory device and a turn-on current of a transistor. The current control device includes an input controller configured to combine a trigger signal and a set signal controlling a circuit operation status, and a drive unit configured to drive an output signal of the input controller, wherein the drive unit includes a current controller for selectively providing a ground voltage in response to an activation status of a pull-down driving signal. | 11-15-2012 |
20120287730 | NON-VOLATILE MEMORY DEVICE AND SENSING METHOD THEREOF - A non-volatile memory device and a sensing method thereof are disclosed, which can sense multi-level data using resistance variation. The non-volatile memory device includes a cell array and a sensing unit. The cell array includes a plurality of unit cells where data is read out or written. The sensing unit compares a sensing voltage corresponding to data stored in the unit cell with a reference voltage, amplifies/outputs the compared result, measures a difference in discharge time where the sensing voltage is discharged in response to a resistance value of the unit cell during an activation period of a sensing enable signal after a bit line is precharged, and senses the data in response to the measured result. | 11-15-2012 |
20120287699 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device selects one of a plurality of memory cells as a dummy memory cell. The dummy memory cell is connected to a bit line that is complementary to a bit line connected to a selected memory cell. This technique advantageously compensates capacitance of the bit line. The semiconductor memory device comprises a selected memory cell connected to a first bit line and a first word line, a dummy memory cell connected to a second bit line complementary to the first bit line and a second word line, and a sense amplifier connected to the first and second bit lines and configured to read data stored in the selected memory cell by simultaneously enablement of the first and second word lines. | 11-15-2012 |
20120286426 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first structural body having first electrode pads; a second structural body disposed in a face-up type over the first structural body in such a way as to expose the first electrode pads, and having first connection members with at least two protrusions; and a third structural body disposed in a face-down type over the second structural body, and having second connection members with at least two protrusions, on a surface thereof facing the second structural body, wherein some of the protrusions of the second connection members are electrically connected with the exposed first electrode pads, and at least one of remaining protrusions of the second connection members is electrically connected with the first connection members. | 11-15-2012 |
20120286398 | SEMICONDUCTOR CHIP MODULE AND PLANAR STACK PACKAGE HAVING THE SAME - A semiconductor chip module includes a chip unit including at least two semiconductor chips disposed with a scribe lane interposed therebetween and each of which has a first surface on which bonding pads are disposed and a second surface that faces away from the first surface. Redistribution lines formed on the first surface of each semiconductor chip have first ends, which are connected with the bonding pads of each semiconductor chip, and second ends that extend to and are disposed on the scribe lane. Through electrodes formed to pass through the scribe lane are electrically connected with the second ends of the redistribution lines. | 11-15-2012 |
20120286357 | SENSE-AMP TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A sense-amp transistor for a semiconductor device and a method for manufacturing the same are disclosed. A sense-amp transistor for a semiconductor device includes a recess array formed in a gate region of a sense-amp, a plurality of buried gates formed in each recess of the recess array so as to form a vertical channel region, and an upper gate configured to form a horizontal channel region in an active region between the buried gates. As a result, the number of additional processes is minimized, and the sensing margin of the sense-amp is guaranteed. | 11-15-2012 |
20120286354 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts. | 11-15-2012 |
20120286351 | CELL ARRAY - A semiconductor device includes a plurality of pillars disposed to protrude from a semiconductor substrate, bit lines surrounding perimeters of portions of the plurality of pillars and extending in a first direction, gates spaced apart from the bit lines, surrounding perimeters of portions of the plurality of pillars over the bit lines, and extending to a second direction perpendicular to the first direction, and separation layers separating the gates parallel to the second direction. Therefore, the semiconductor device suitable to the high integration of semiconductor devices can be implemented. | 11-15-2012 |
20120282750 | SEMICONDUCTOR DEVICE HAVING CAPACITORS FIXED TO SUPPORT PATTERNS AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device containing a cylindrical shaped capacitor and a method for manufacturing the same is presented. The semiconductor device includes a plurality of storage nodes and a support pattern. The plurality of storage nodes is formed over a semiconductor substrate. The support pattern is fixed to adjacent storage nodes in which the support pattern has a flowable insulation layer buried within the support pattern. The buried flowable insulation layer direct contacts adjacent storage nodes. | 11-08-2012 |
20120281490 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - A technology is capable of improving a process margin in forming a bit line and reducing bit line resistance to improve characteristic of the semiconductor device by forming a cell bit line in a double layer structure are provided. The semiconductor device includes a buried gate buried within a cell region of a semiconductor substrate, a first bit line formed over the semiconductor substrate, a second bit line formed over the first bit line and coupled to the first bit line. The first bit line is formed in the same layer as a peripheral gate of a peripheral circuit region and the second bit line is formed in the same layer as a metal line of the peripheral circuit region. | 11-08-2012 |
20120280394 | SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION - A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved. | 11-08-2012 |
20120280309 | MOS TRANSISTOR SUPPRESSING SHORT CHANNEL EFFECT AND METHOD OF FABRICATING THE SAME - A MOS transistor suppressing a short channel effect includes a substrate, a first diffusion region and a second diffusion region separated from each other by a channel region in an upper portion of the substrate, a gate insulating layer including a first gate insulating layer disposed on a surface of the substrate in the channel region and a second gate insulating layer having a specified depth from the surface of the substrate to be disposed between the first diffusion region and the channel region, and a gate electrode disposed on the first gate insulating layer. | 11-08-2012 |
20120276711 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING SPACER WITH AIR GAP - A semiconductor device having a spacer with an air gap is manufactured by forming a first conductive pattern over a semiconductor substrate; forming a spacer on sidewalls of the first conductive pattern; forming a sacrifice layer on sidewall of the spacer, the sacrifice layer having a different etching selectivity with the spacer; forming a second conductive pattern to fill a space between the first conductive pattern and the first conductive pattern; and forming an air gap between the first and second conductive patterns by selectively removing the sacrifice layer. | 11-01-2012 |
20120275257 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A semiconductor device includes a first bit line section coupled to a first cell string, a second bit line section coupled to a second cell string, a page buffer coupled to the first bit line section and a switching circuit formed between the first bit line section and the second bit line section, wherein the switching circuit couples the first bit line section to second bit line section in response to a select signal. | 11-01-2012 |
20120275248 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a memory block configured to have a normal cell array and a redundancy cell array; a column address buffer configured to compare a plurality of input column addresses with a fail column address signal-stored in a fuse array, and generate a column enable signal or a fail column enable signal; a column decoder configured to decode the column enable signal, and output a column selection signal to the normal cell array; and a column redundancy controller configured to generate a redundancy control signal in response to the fail column enable signal, generate a redundancy enable signal so as to reuse a redundancy bit line which has been substituted before according to the generated redundancy control signal, and output the generated redundancy enable signal to the redundancy cell array. | 11-01-2012 |
20120275247 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR REPAIRING THE SAME - A semiconductor memory device includes a latch address generation unit configured to latch row addresses to generate first and second latch addresses when at least one of memory cells coupled to sub word lines is faulty, wherein the first and second latch addresses select different main word lines, and a repair unit configured to perform a repair operation on memory cells coupled to the main word lines selected by the first and second latch addresses. | 11-01-2012 |
20120275243 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a first switch configured to couple a bit line to a first input/output line in response to an output selection signal including a pulse which is generated in response to a read command or write command; and a second switch configured to couple the first input/output line to a second input/output line in response to a switching control signal which is enabled after the output selection signal is enabled. | 11-01-2012 |
20120275239 | MEMORY APPARATUS AND REFRESH METHOD THEROF - A memory apparatus includes a memory cell array comprising a plurality of memory cells connected with a plurality of bit lines and a plurality of word lines, a page buffer unit connected to the plurality of bit lines and latch data read from a memory cell selected from the plurality of memory cells, and a control unit configured to generate a refresh signal according to a prestored current status and provide the refresh signal to the page buffer unit in order to substantially prevent loss of the data latched by the page buffer unit. | 11-01-2012 |
20120275222 | NONVOLATILE MEMORY APPARATUS AND VERIFICATION METHOD THEREOF - A nonvolatile memory apparatus includes: a memory cell array including a plurality of unit memory cells; a page buffer unit configured to read data from a selected memory cell of the memory cell array and store the read data; a controller configured to generate a reference current generation signal, a first current control signal, and a second current control signal, which correspond to the number of fail bits to be sensed and a deviation in cell current amounts flowing through the unit memory cells during a read operation, in response to a verification command; and a fail bit sensing unit configured to receive the reference current generation signal, the first current control signal, and the second current control signal from the controller in response to the verification command, and control at least one of a reference current amount and a data read current amount of the page buffer unit. | 11-01-2012 |
20120274380 | INTERNAL VOLTAGE GENERATION CIRCUIT - An internal voltage generation circuit includes a first detection unit, a second detection unit, a control unit, and a voltage pumping unit. The first detection unit compares an internal voltage with a first reference voltage to generate a first detection signal when the first detection unit is activated in response to a first enable signal. The second detection unit compares the internal voltage with a second reference voltage to generate a second detection signal. The control unit generates the first enable signal and a second enable signal in response to the first detection signal and the second detection signal. The voltage pumping unit generates the internal voltage in response to the second enable signal. | 11-01-2012 |
20120274348 | TEST CIRCUIT AND METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT - A test circuit of a semiconductor integrated circuit includes a through via, a voltage driving unit, and a determination unit. The through via receives an input voltage. The voltage driving unit is connected to the through via to receive the input voltage, changes a level of the input voltage in response to a test control signal, and generates a test voltage. The determination unit compares the input voltage with the test voltage to outputs a resultant signal. | 11-01-2012 |
20120273961 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a plurality of semiconductor chips which are stacked; and an auxiliary semiconductor chip configured to recover and transmit signals of the plurality of semiconductor chips through a plurality of through vias which extend vertically, at a predetermined time interval. | 11-01-2012 |
20120273940 | SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING THE SAME - A semiconductor apparatus includes a first chip comprising a first bonding pad and a dielectric layer exposes a portion of the first bonding pad; a first bonding layer covering entirely or partially the first front side of the first chip, a second chip comprising a second bonding pad and a through-silicon via, and a conductive projection formed over the second bonding pad. The dielectric layer is formed on of the first chip, a second back side of the second chip is bonded to the first front side of the first chip by the medium of the first bonding layer, and the second bonding pad formed on a second front side of the second chip is coupled to the first bonding pad by the through-silicon via. | 11-01-2012 |
20120273919 | SEMICONDUCTOR CELL AND METHOD FOR FORMING THE SAME - A semiconductor cell includes storage node contact plugs disposed on a semiconductor substrate, a bit line formation area which is disposed between the storage node contact plugs and exposes the semiconductor substrate, and an air gap which is in contact with a lower portion of a sidewall of the bit line formation area and extends in a direction perpendicular to a direction in which the bit line formation area extends. Therefore, the coupling effect between adjacent bit lines as well as the coupling effect caused between adjacent storage node contact plugs and the coupling effect caused between the storage node contact plug and the bit line are controlled to improve characteristics of semiconductor devices. | 11-01-2012 |
20120273918 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed. In a method for forming the semiconductor substrate including a cell region and a peripheral region, a guard pattern defined by an epitaxial growth layer located at the edge part between the cell region and the peripheral region is formed. As the guard pattern is not damaged by an oxidation process, a bias leakage path between an N-well bias and a P-well bias of the peripheral region is prevented from occurring Reliability of a gate oxide film may be increased, resulting in an increased production yield of the semiconductor device and implementation of stable voltage and current characteristics. | 11-01-2012 |
20120273876 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate that includes a cell region and a peripheral circuit area. The method for forming the semiconductor includes forming a guard pattern of an insulation material. The guard pattern is located at an edge part between the cell region and the peripheral circuit region and is buried in the semiconductor substrate. As a result, the semiconductor device prevents oxidation of the guard pattern, such that a cell gate oxidation integrity (GOI) failure is improved and an IDD failure is prevented from being generated. | 11-01-2012 |
20120273850 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method for fabricating the same are disclosed. A fin of the semiconductor device including a fin-shaped channel region is configured in the form of a non-uniform structure, and a leakage current caused by the electric field effect generated in the semiconductor device is prevented from being generated, resulting in an increased operation stability of the semiconductor device. | 11-01-2012 |
20120270380 | METHOD FOR FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE - A method for forming an isolation layer in a semiconductor device includes forming a trench in a semiconductor substrate. A liner layer that includes a liner nitride layer and a liner oxide layer is formed on an exposed surface of the trench. A flowable insulation layer is formed to fill the trench. The flowable insulation layer is recessed to expose a portion of the liner nitride layer on an upper portion of the trench. A first preheating process is performed to release stress of the liner layer. A second preheating process is performed to oxidize the exposed liner nitride layer. A buffer layer is formed on a portion of the liner layer that is formed on a sidewall of the trench and exposed after the flowable insulation layer is recessed. The buffer layer is etched to smoothen a rough portion of the liner layer that is formed when the flowable insulation layer is recessed. A buried insulation layer is deposited in the trench. | 10-25-2012 |
20120269019 | SEMICONDUCTOR DEVICE HAVING CONTROL BITLINE TO PREVENT FLOATING BODY EFFECT - A vertical semiconductor device is provided. The semiconductor device includes a cell array including a control bit line connected to cells and electrically isolated from a bit line, and a floating body control circuit for applying a floating control voltage to the control bit line in a predetermined period. | 10-25-2012 |
20120269007 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING OUT THE SAME - A semiconductor memory device includes a memory cell array configured to include memory cells, peripheral circuits configured to read out data stored in a selected memory cell in a read operation, and a controller configured to control the peripheral circuits so that the peripheral circuits sense a voltage level of the bit line when a first read voltage of the read voltages is supplied to the word line and the peripheral circuits sense voltage levels of the bit line when a second read voltage lower than the first read voltage by a specific level and a third read voltage higher than the first read voltage by the specific level are supplied to the word line in order to determine whether a threshold voltage of the selected memory cell falls within a set voltage distribution in the read operation. | 10-25-2012 |
20120269006 | SEMICONDUCTOR DEVICE - A semiconductor device is capable of reducing the coupling capacitance between adjacent bit lines by forming an air-gap at an opposite side of a one side contact when forming a buried bit line or increasing a thickness of an insulating layer, thereby improving characteristics of the semiconductor devices. The semiconductor device includes a plurality of line patterns including one side contacts, a bit line buried in a lower portion between the line patterns, a bit line junction region formed within each of the line patterns at one side of the bit line, and an air-gap formed between the other side of the bit line and each of the line patterns. | 10-25-2012 |
20120268977 | SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD THEREOF - A semiconductor memory device includes a memory cell block configured to include a plurality of main cells and a plurality of CAM cells, a plurality of page buffers configured to store data to be programmed into the memory cell block, and a Y decoder configured to transfer CAM data to respective page buffers, selected from among the plurality of page buffers, in response to a data determination signal and CAM column addresses whenever the CAM data is inputted in a CAM data input mode. | 10-25-2012 |
20120268179 | VOLTAGE GENERATOR AND METHOD OF GENERATING VOLTAGE - A voltage generator includes a clock generator configured to generate a first clock signal and a second clock signal having a longer cycle than the first clock signal, a pumping unit configured to generate a pumping voltage in response to the first or second clock signal, a first detection circuit configured to detect the pumping voltage and generate a first control signal for controlling the operation of the pumping unit based on the result of the detection, and a second detection circuit configured to generate a second control signal for outputting the first or second clock signal generated from the clock generator depending on whether the first control signal maintains an enable state for a specific time. | 10-25-2012 |
20120267723 | SEMICONDUCTOR DEVICE WITH BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other. | 10-25-2012 |
20120267718 | SOI DEVICE HAVING AN INCREASING CHARGE STORAGE CAPACITY OF TRANSISTOR BODIES AND METHOD FOR MANUFACTURING THE SAME - An SOI device includes an SOI substrate having a stacked structure including a buried oxide layer and a first silicon layer sequentially stacked on a silicon substrate. The SOI substrate possesses grooves having a depth that extends from an upper surface of the first silicon layer to a partial depth of the buried oxide layer. An insulation layer is formed on the lower surfaces of the grooves and a second silicon layer is formed filling the grooves having the insulation layer formed thereon. Gates are formed on the second silicon layer and junction regions are formed in the first silicon layer on both sides of the gates to contact the insulation layer. | 10-25-2012 |
20120264298 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is disclosed. A method for manufacturing a semiconductor device includes forming a device isolation structure for defining an active region, forming a buried word line traversing the active region, forming one or more insulation film patterns over the buried word line, forming a line pattern including a first conductive material at a position between the insulation film patterns, and forming a plurality of storage node contacts (SNCs) by isolating the line pattern. As a result, when forming a bit line contact and a storage node contact, a fabrication margin is increased. | 10-18-2012 |
20120264274 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Provided is a transistor of a semiconductor device and a method for fabricating the same. A transistor of a semiconductor device may include: a semiconductor substrate having an active region defined by an isolation layer; a recess trench formed in the active region and disposed to cross the semiconductor substrate in one direction; and a gate line formed in a straight line pattern, overlapping the recess trench and disposed to cross the recess trench at approximately right angles. | 10-18-2012 |
20120257648 | TEMPERATURE SENSOR - A temperature sensor includes: a gate voltage generation unit including a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage; and a variable voltage output unit including an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage. | 10-11-2012 |
20120257468 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a transmission line configured to transmit a fuse enable signal for performance of a repair operation; a first repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a first repair enable signal for performing a repair operation for a first bank; and a second repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a second repair enable signal for performing a repair operation for a second bank. | 10-11-2012 |
20120257462 | REPAIR METHOD AND INTEGRATED CIRCUIT USING THE SAME - An integrated circuit includes: a memory controller configured to determine whether a memory cell included in a semiconductor memory device is defective or not and extract a fail address having positional information of the defective memory cell, in a test mode; and a fail address storage unit configured to store the fail address. | 10-11-2012 |
20120257445 | NONVOLATILE MEMORY APPARATUS HAVING MAGNETORESISTIVE MEMORY ELEMENTS AND METHOD FOR DRIVING THE SAME - A semiconductor memory apparatus includes a source line, a first bit line disposed over the source line, a second bit line disposed under the source line, a first memory cell between the source line and the first bit line, and a second memory cell between the source line and the second bit line. | 10-11-2012 |
20120257444 | WRITE DRIVER CIRCUIT FOR MRAM, MRAM AND LAYOUT STRUCTURE THEREOF - A write driver circuit for a magnetic random access memory includes a memory cell array including a plurality of magnetic memory cells in which a pair of magnetic memory cells adjacent to each other in a direction of a bit line share a source line, and each magnetic memory cell is connected between the bit line and the source line. The write driver circuit includes a switching unit connected between a terminal for supplying a positive recording voltage and a terminal for supplying a negative recording voltage to selectively supply current generated by the positive recording voltage or the negative recording voltage to the bit line according to a write enable signal and a data signal. | 10-11-2012 |
20120257436 | SEMICONDUCTOR INTERGRATED CIRCUIT AND OPERATING METHOD THEREOF - A semiconductor integrated circuit includes a variable resistive element, a current supply unit and a control signal generating unit. The resistance of the variable resistive element is changed depending on current flowing therethrough. The current supply unit controls the current in response to a control signal. The control signal generating unit generates the control signal by sensing the change in the resistance of the variable resistive element. | 10-11-2012 |
20120256675 | INPUT REFERENCE VOLTAGE GENERATING METHOD AND INTEGRATED CIRCUIT USING THE SAME - An integrated circuit includes: a reference voltage generation unit configured to be driven in response to an enable signal, select one of a plurality of reference voltages generated by dividing a power supply voltage as an input reference voltage, and output the input reference voltage; and a reference voltage level compensation unit configured to be driven in response to the enable signal and change a level of the input reference voltage by an amount of change in a level of an external voltage. | 10-11-2012 |
20120256667 | DELAY LOCKED LOOP SEMICONDUCTOR APPARATUS THAT MODELS A DELAY OF AN INTERNAL CLOCK PATH - A delay locked loop semiconductor apparatus that models a delay of an internal clock path is presented. The semiconductor apparatus includes: a DLL and a detection code output block. The DLL includes a delay model unit in which a delay value of an internal clock path is modeled and is configured to output a DLL clock signal of which the phase is controlled by reflecting the delay value of the internal clock path into an applied input clock signal. The detection code output block is configured to output a phase difference detection code having a code value corresponding to a phase difference between a first phase correction clock signal generated by reflecting a model delay value of the delay model unit into the DLL clock signal and a second phase correction clock signal generated by reflecting an actual delay value of the internal clock path into the DLL clock signal. | 10-11-2012 |
20120256662 | POWER-UP SIGNAL GENERATION CIRCUIT - A power-up signal generation circuit includes: a first section signal generation unit configured to sense a level of an external voltage and a level of an internal voltage and generate a first section signal; a second section signal generation unit configured to output a second section signal by buffering the first section signal when the internal voltage is lowered to below a minimum level; and a selective output unit configured to output the first section signal as a power-up signal, wherein the selective output unit outputs the second section signal as the power-up signal when a power-up section is ended and a mode register setting operation is performed. | 10-11-2012 |
20120256655 | INTEGRATED CIRCUIT - An integrated circuit includes: an on-die-termination (ODT) circuit configured to drive an input signal with drivability adjusted according to an impedance calibration code and a reference voltage; and an input buffer configured to buffer the input signal in response to the reference voltage and generate an output signal. | 10-11-2012 |
20120254650 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a synchronized signal generation circuit, a serial-to-parallel data conversion unit and a data storage region. The synchronized signal generation unit outputs one of a data input/output strobe signal and a delay locked clock signal as synchronized signals in response to a control signal in a write operation. The serial-to-parallel data conversion unit converts serial data into parallel data in response to the synchronized signals. The parallel data is stored in the data storage region. | 10-04-2012 |
20120252186 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes a semiconductor substrate including an active area defined by an device isolation region, a buried gate formed on both side walls of a trench formed in the semiconductor substrate, and a storage node contact which is buried between the buried gates, and is connected to the active region of a middle portion of the trench and the device isolation region. | 10-04-2012 |
20120250734 | DATA OUTPUT CIRCUIT OF SEMICONDUCTOR APPARATUS - A data output circuit of a semiconductor apparatus includes a clock skew compensation repeater configured to control a delay amount of a clock in response to skew compensation codes and output a data synchronization clock; a mismatch compensation driver configured to synchronize internal data with the data synchronization clock and output the internal data synchronized with the data synchronization clock by controlling a transition timing of the internal data according to mismatch compensation codes; and a data output driver configured to generate output data in response to an output of the mismatch compensation driver. | 10-04-2012 |
20120250431 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR DRIVING THE SAME - A semiconductor memory apparatus includes: a memory block including first and second planes; and a reset signal generator configured to generate a first reset signal by logically combining a first plane selection signal and a control pulse signal which pulses after a first programming setup pulse signal pulses during a first programming command cycle, and generate a second reset signal by logically combining a second plane selection signal and the control pulse signal which again pulses after a second programming setup pulse signal pulses during a second programming command cycle after the first programming command cycle. A plurality of first page buffers allocated to the first plane are reset in response to the first reset signal, and a plurality of second page buffers allocated to the second plane are reset in response to the second reset signal. | 10-04-2012 |
20120250412 | FLASH MEMORY APPARATUS AND METHOD FOR GENERATING READ VOLTAGE THEREOF - A flash memory apparatus includes: a cell array including a plurality of main blocks, a code addressable memory (CAM) block, and a security block; a control unit configured to detect a threshold voltage change data of a main block to which a program operation has been performed among the plurality of main blocks, and set a trimming value corresponding to the detected threshold voltage change data; and a read voltage generation unit configured to generate a read voltage according to the set trimming value. | 10-04-2012 |
20120250410 | SEMICONDUCTOR INTEGRATED CIRCUIT AND DATA READ METHOD - A semiconductor integrated circuit includes a memory cell area comprising a main cell and a spare cell, and a memory controller configured to set an offset value using a program verify level which is set during a program operation, and set a read level using the offset value during a read operation. | 10-04-2012 |
20120250402 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a resistive memory cell; a data sensing unit configured to sense an output voltage, formed by a sensing current supplied to the resistive memory cell, based on a reference voltage, and output data having a value corresponding to the sensing result; and a reference voltage generation unit comprising a dummy memory cell including first and second resistors having first and second resistance values, respectively, and configured to output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage. | 10-04-2012 |
20120249228 | POWER-UP SIGNAL GENERATION CIRCUIT OF SEMICONDUCTOR APPARATUS - A power-up signal generation circuit of a semiconductor apparatus includes a driver configured to generate a power-up signal in response to a first voltage. The power-up signal generation circuit may also comprise a power control unit configured to provide the first voltage or a second voltage as a power supply voltage to the driver in response to the power-up signal. | 10-04-2012 |
20120249222 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a plurality of dies, wherein each of the dies is configured to enable a power circuit provided therein according to a power control signal, in a state in which the die was determined to be a good die or a fail die. | 10-04-2012 |
20120249221 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a fuse set; a terminal assigned to be applied with a first external signal in a normal operation; and a control unit configured to receive a second external signal through the terminal and apply the received second external signal to the fuse set in a fuse control operation. | 10-04-2012 |
20120249214 | DRIVER CIRCUIT OF SEMICONDUCTOR APPARATUS AND METHOD FOR CONTROLLING THE SAME - A driver circuit of a semiconductor apparatus includes a driver and a control unit configured to vary a voltage level of a power supply terminal of the driver in response to a standby mode signal. | 10-04-2012 |
20120249201 | CLOCK SIGNAL GENERATION CIRCUIT - A clock signal generation circuit includes a clock delay control signal generation unit and a doubler clock generation unit. The clock delay control signal generation unit divides a clock signal to generate a divided clock signal, generates a plurality of periodic signals for a half period of the divided clock signal, and generates clock delay control signals from the plurality of periodic signals. The doubler clock generation unit delays the clock signal in response to the clock delay control signals to generate a delayed clock signal, and generates an output clock signal in response to the clock signal and the delayed clock signal. | 10-04-2012 |
20120248586 | SEMICONDUCTOR APPARATUS FOR PREVENTING CROSSTALK BETWEEN SIGNAL LINES - A semiconductor integrated circuit apparatus includes a semiconductor substrate, a plurality of signal lines, and at least one interface member. The signal lines are disposed on the semiconductor substrate. The interface member is disposed in the semiconductor substrate between the adjacent signal lines among the signal lines to pierce the semiconductor substrate. | 10-04-2012 |
20120243355 | SEMICONDUCTOR APPARATUS - Various embodiments of a semiconductor apparatus are disclosed. In one exemplary embodiment, a semiconductor apparatus may include a memory block chip and a signal input/output chip. The memory block chip is configured to control a data access size according to specifications. The signal input/output chip is configured to transmit input data from an external device to the memory block chip or transmit output data from the memory block chip to an external device and process the input data or the output data by selectively enabling a clock phase control unit and a signal processing unit according to the specifications. | 09-27-2012 |
20120243350 | ADDRESS DELAY CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - An address delay circuit of a semiconductor memory apparatus includes a first group control pulse generation unit configured to generate a first control pulse after input of a first group column address strobe pulse and passage of a time corresponding to a first set multiple of one cycle of a clock, a second group control pulse generation unit configured to generate a second control pulse after input of a second group column strobe address pulse and passage of a time corresponding to a second set multiple of the one cycle of the clock, a first address storage unit configured to receive and store a first group external address in response to the first control pulse, and output a first group internal address, and a second address storage unit configured to receive and store a second group external address in response to the second control pulse, and output a second group internal address. | 09-27-2012 |
20120236618 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device includes a memory array configured to include memory cells for storing input data and Code Address Memory (CAM) cells for storing setting data used to set an operation condition; an operation circuit configured to perform a CAM read operation by supplying a read voltage to the CAM cells, perform a test operation for detecting unstable CAM cells in each of which a difference between a threshold voltage and the read voltage is smaller than a permitted limit, from among the CAM cells, and perform an erase operation or a program operation for the unstable CAM cells; and a controller configured to control the operation circuit so that the program operation for storing the setting data in the unstable CAM cells is performed if the number of unstable CAM cells detected in the test operation is greater than a permitted value. | 09-20-2012 |
20120235248 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern. | 09-20-2012 |
20120231635 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
20120231634 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
20120231599 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor devices includes forming a plurality of patterns spaced apart from each other on a semiconductor substrate, forming a filling layer, not removed in a subsequent process of forming a mask pattern and where the filling layer formed to have a lower height than the plurality of patterns, between the plurality of patterns, forming a mask layer on the entire structure where the filling layer is formed, and forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is removed. | 09-13-2012 |
20120228735 | FUSE PATTERNS AND METHOD OF MANUFACTURING THE SAME - The present invention provides fuse patterns and a method of manufacturing the same. According to the present invention, an insulating layer and a contact plug are filled between fuse patterns which are formed to have their ends broken and are isolated from each other. In case of a fail cell, the insulating layer is broken owing a difference in an electrical bias (current or voltage) between a metal wire and the fuse patterns, and a short is generated between the fuse patterns. Accordingly, embodiments avoid damage to a semiconductor substrate associated with a conventional fuse repair method employing laser energy, and the area of a fuse box can be reduced. | 09-13-2012 |
20120228685 | MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory. | 09-13-2012 |
20120228678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to an embodiment of a semiconductor device and a method of manufacturing the same, buried gates are formed in a semiconductor substrate including a cell region and a peripheral region, with the cell region and the peripheral region formed to have a step therebetween. Next, a spacer is formed in a region between the cell region and the peripheral region to block an oxidation path between a gate oxide layer and another insulating layer. Embodiments may reduce damage to active regions and prevent IDD failure because a gate pattern is formed on a guard region provided at a periphery of the cell region. | 09-13-2012 |
20120224441 | SEMICONDUCTOR MEMORY APPARATUS - Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, a semiconductor memory apparatus may include a page size control unit configured to generate first and second block enable signals having a level corresponding to one of a plurality of row selection signals or one of a plurality of column selection signals based on a page size control signal; a first page block configured to enable a plurality of first memory cells selected by the plurality of row selection signals in response to the first block enable signal, and activate data access of memory cells selected among the plurality of selected first memory cells by the plurality of column selection signals and the option column selection signal; and a second page block configured to enable a plurality of second memory cells selected by the plurality of row selection signals in response to the second block enable signal, and activate data access of memory cells selected among the plurality of selected second memory cells by the plurality of column selection signals and the option column selection signal. | 09-06-2012 |
20120221927 | SEMICONDUCTOR APPARATUS AND DATA PROCESSING METHOD - A semiconductor apparatus includes a bus inversion information (DBI) processing unit configured to, when receiving multi-bit data, calculating DBI information of the data, and outputting a plurality of DBI flag signals, generate the plurality of DBI flag signals such that each DBI flag signal reflects DBI information of predetermined bits of the data, a first CRC processing unit configured to calculate cyclic redundancy check (CRC) information using the multi-bit data and partial DBI flag signals calculated among the plurality of DBI flag signals and output a plurality of CRC signals, and a second CRC processing unit configured to output CRC codes using the plurality of CRC signals and remaining DBI flag signals calculated among the plurality of the DBI flag signals. | 08-30-2012 |
20120221825 | NONVOLATILE MEMORY SYSTEM AND FEATURE INFORMATION SETTING METHOD - A nonvolatile memory system includes a controller and a nonvolatile memory apparatus, where the controller provides the nonvolatile memory apparatus with a first feature setting command or a second feature setting command according to device information of the nonvolatile memory apparatus in a mode change of the nonvolatile memory apparatus. | 08-30-2012 |
20120218850 | NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A non-volatile memory device and a read method thereof are disclosed. The read method includes providing a memory block having memory cells connected to word lines and connected in serial to a bit line, sensing potential of the bit line by applying a first read voltage to a selected word line of the word lines and providing a first pass voltage to an unselected word line adjacent to the selected word line, sensing potential of the bit line by applying a second read voltage higher than the first read voltage to the selected word line and providing a second pass voltage lower than the first pass voltage to the unselected word line adjacent to the selected word line, and sensing potential of the bit line by applying a third read voltage higher than the second read voltage to the selected word line and providing a third pass voltage lower than the second pass voltage to the unselected word line adjacent to the selected word line. | 08-30-2012 |