Axcelis Technologies, Inc. Patent applications |
Patent application number | Title | Published |
20150228523 | Variable Electrode Pattern for Versatile Electrostatic Clamp Operation - An electrostatic clamping system provides an electrostatic clamp (ESC) having a clamping surface, and a first and second pair of electrodes. Each of the first pair of electrodes are associated with a respective one-third of the clamping surface, and each of the second pair of electrodes are associated with a respective one-sixth of the clamping surface. A peripheral region of each of the first and second pairs of electrodes tapers in width toward the periphery of the clamping surface in a spiral. A power supply selectively outputs a DC and a three-phase AC clamping voltage. A controller selectively operates the ESC in a DC mode and an AC mode. The DC mode connects one of the first pair of electrodes and one of the second pair of electrodes to a positive terminal and the other one of the first pair of electrodes and other one of the second pair of electrodes to a negative terminal of the power supply. The AC mode electrically connects a first phase terminal of the power supply to one of the first pair of electrodes, a second phase terminal of the power supply to the other one of the first pair of electrodes, and a third phase terminal of the power supply to both of the second pair of electrodes. | 08-13-2015 |
20150228515 | Constant Mass Flow Multi-Level Coolant Path Electrostatic Chuck - A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels. | 08-13-2015 |
20150228514 | Multi Fluid Cooling System for Large Temperature Range Chuck - An electrostatic clamping system has an electrostatic chuck having one or more electrodes and a clamping surface and one or more fluid passages therethrough. A plurality of fluid sources has a respective plurality of fluids associated therewith, wherein each of the plurality of fluids are chemically distinct from one another and has a respective viable fluid temperature range associated therewith. A thermal unit is configured to heat and/or cool the plurality of fluids to one or more predetermined temperature setpoints. A valve assembly is configured to selectively fluidly couple each of the plurality of fluid sources to the one or more fluid passages of the electrostatic chuck. A controller is also configured to selectively fluidly couple the one or more fluid passages of the electrostatic chuck with a selected one or more of the plurality of fluid sources via a control of the valve assembly. | 08-13-2015 |
20150214005 | METHOD FOR ENHANCING BEAM UTILIZATION IN A SCANNED BEAM ION IMPLANTER - A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups. A beam current is sensed by the side Faraday cups concurrent with scanning the beam, wherein the side Faraday cups are connected to a dosimeter only concurrent with a wide scan of the ion beam, and are disconnected concurrent with narrow scans of the ion beam. The side Faraday cups are further connected to ground concurrent with narrow scans of the ion beam. | 07-30-2015 |
20150179393 | REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM - An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon. | 06-25-2015 |
20140188416 | CHARGE INTEGRATION BASED ELECTROSTATIC CLAMP HEALTH MONITOR - An electrostatic clamp monitoring system is provided having an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp, wherein the power supply is configured to selectively supply a clamping voltage to the one or more electrodes of the electrostatic clamp. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. A memory stores the charge value associated with the clamping force over a plurality of clamping cycles, therein defining a plurality of charge values, and the controller determines a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values. | 07-03-2014 |
20140065730 | IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION - An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece. | 03-06-2014 |
20140034846 | IN-VACUUM HIGH SPEED PRE-CHILL AND POST-HEAT STATIONS - An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station. | 02-06-2014 |
20130320208 | Inert Atmospheric Pressure Pre-Chill and Post-Heat - An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment. | 12-05-2013 |
20130305989 | METHOD AND APPARATUS FOR CLEANING RESIDUE FROM AN ION SOURCE COMPONENT - Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed. | 11-21-2013 |
20130305988 | Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source - An ion source is disclosed that utilizes a capacitive discharge to produce ignition ions, which are subsequently used to ignite an inductively coupled plasma within a plasma chamber. In some embodiments, a capacitive discharge element is located along a gas feed line at a position that is upstream of a plasma chamber. The capacitive discharge element ignites a capacitive discharge within the gas feed line. The capacitive discharge contains ignition ions that are provided to a downstream plasma chamber. An inductively coupled plasma ignition element, in communication with the plasma chamber, ignites and sustains a high density inductively coupled plasma within the plasma chamber based upon ignition ions from the capacitive discharge. Due to the ignition ions, the inductively coupled plasma element can easily ignite the high density inductively coupled plasma, even at a low pressure. | 11-21-2013 |
20130181139 | BEAM LINE DESIGN TO REDUCE ENERGY CONTAMINATION - Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants. | 07-18-2013 |
20130160793 | PLASMA GENERATING APPARATUS AND PROCESS FOR SIMULTANEOUS EXPOSURE OF A WORKPIECE TO ELECTROMAGNETIC RADIATION AND PLASMA - An apparatus configured to provide simultaneous plasma and electromagnetic irradiation of a workpiece within the same process chamber, thereby providing processes that permit simultaneous plasma and electromagnetic irradiation within the same atmosphere as may be desired for some applications. | 06-27-2013 |
20130146760 | SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY - A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition. | 06-13-2013 |
20130140473 | Automatic Control System for Selection and Optimization of Co-Gas Flow Levels - An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled. | 06-06-2013 |
20130099131 | METHOD AND APPARATUS FOR IMPROVED UNIFORMITY CONTROL WITH DYNAMIC BEAM SHAPING - The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity. | 04-25-2013 |
20130026356 | System and Method for Ion Implantation with Improved Productivity and Uniformity - A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current. | 01-31-2013 |
20120298854 | Mass Analysis Variable Exit Aperture - A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit aperture is located within a mass analyzer at a position upstream of a resolving aperture and effectively limits the size of an exit aperture so as to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture has a mechanical drive mechanism that enables a blocking structure to be moved into the path of an ion beam in a graduated fashion as guided by a control unit that operates based upon one or more characteristics of the ion beam. | 11-29-2012 |
20120279657 | RF Coupled Plasma Abatement System Comprising an Integrated Power Oscillator - The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load. | 11-08-2012 |
20120267546 | Vacuum System Cold Trap Filter - A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps. | 10-25-2012 |
20120248326 | Uniformity of a Scanned Ion Beam - One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis. | 10-04-2012 |
20120248324 | Method and Apparatus for Improved Uniformity Control with Dynamic Beam Shaping - The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity. | 10-04-2012 |
20120237696 | FLUID DISTRIBUTION MEMBERS AND/OR ASSEMBLIES - A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion. | 09-20-2012 |
20120190181 | CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION - Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece. | 07-26-2012 |
20120187842 | MICROWAVE PLASMA ELECTRON FLOOD - A method and apparatus is provided for generating a plasma electron flood using microwave radiation. In one embodiment, a microwave PEF apparatus is configured to generate a magnetic field that rapidly decays over a PEF cavity, resulting in a static magnetic field having a high magnetic field strength near one side (e.g., “bottom”) of the PEF cavity and a low magnetic field strength (e.g., substantially zero) near the opposite side (e.g., “top”) of the PEF comprising an elongated extraction slit. In one particular embodiment, the one or more permanent magnets are located at a position that is spatially opposed to the location of the elongated extraction slit to achieve the rapidly decaying magnetic field. | 07-26-2012 |
20120161037 | Dose Measurement Method using Calorimeter - An ion implantation system for implanting ions into a workpiece is provided, having a process chamber and an energy source configured to produce a plasma of ions within the process chamber. A workpiece support having a support surface configured to position the workpiece within an interior region of the process chamber is configured to expose an implantation surface of the workpiece to the plasma of ions. A pulse generator is in electrical communication with the workpiece support, wherein the pulse generator is configured to apply an electrical pulse to the support, therein attracting ions to the implantation surface of the workpiece and implanting ions into the workpiece. A calorimeter is further associated with the workpiece support, wherein a controller is configured to monitor a signal from the calorimeter and to control the implantation of ions into the workpiece based, at least in part, on the signal from the calorimeter. | 06-28-2012 |
20120119113 | Implementation of CO-Gases for Germanium and Boron Ion Implants - An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure. | 05-17-2012 |
20120118232 | Hydrogen COGas For Carbon Implant - A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water. | 05-17-2012 |
20120025107 | Versatile Beam Glitch Detection System - A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position. | 02-02-2012 |
20120024314 | PLASMA MEDIATED ASHING PROCESSES - Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described. | 02-02-2012 |
20110299218 | HEATED ANNULUS CHUCK - A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion. | 12-08-2011 |
20110299217 | HEATED ELECTROSTATIC CHUCK INCLUDING MECHANICAL CLAMP CAPABILITY AT HIGH TEMPERATURE - An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece. | 12-08-2011 |
20110297845 | EFFECTIVE ALGORITHM FOR WARMING A TWIST AXIS FOR COLD ION IMPLANTATIONS - A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis. | 12-08-2011 |
20110292562 | MATCHED COEFFICIENT OF THERMAL EXPANSION FOR AN ELECTROSTATIC CHUCK - An apparatus and method are provided for selecting materials for forming an electrostatic clamp. The electrostatic clamp has a backing plate having a first coefficient of thermal expansion, wherein the backing plate provides structural support and rigidity to the electrostatic clamp. The electrostatic clamp further has a clamping plate having a clamping surface associated with contact with a workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith. The clamping plate is bonded, attached or grown to the backing plate, wherein minimal deflection of the clamping plate is evident across a predetermined temperature range. The first coefficient of thermal expansion and second coefficient of thermal expansion, for example, are substantially similar, and vary by no greater than a factor of three. | 12-01-2011 |
20110291030 | ACTIVE DEW POINT SENSING AND LOAD LOCK VENTING TO PREVENT CONDENSATION ON WORKPIECES - A system, apparatus, and method is provided for preventing condensation on a workpiece in an end station of an ion implantation system. A workpiece is cooled in a first environment, and is transferred to a load lock chamber that is in selective fluid communication with the end station and a second environment, respectively. A workpiece temperature monitoring device is configured to measure a temperature of the workpiece in the load lock chamber. An external monitoring device measures a temperature and relative humidity in the second environment, and a controller is configured to determine a temperature of the workpiece at which condensation will not form on the workpiece when the workpiece is transferred from the load lock chamber to the second environment. | 12-01-2011 |
20110291023 | HEATED ROTARY SEAL AND BEARING FOR CHILLED ION IMPLANTATION SYSTEM - A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis. | 12-01-2011 |
20110291022 | Post Implant Wafer Heating Using Light - An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece. | 12-01-2011 |
20110272567 | Throughput Enhancement for Scanned Beam Ion Implanters - Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable. | 11-10-2011 |
20110266456 | Magnetic Scanning System with Improved Efficiency - Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed. | 11-03-2011 |
20110260047 | SILABORANE IMPLANTATION PROCESSES - Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece. | 10-27-2011 |
20110226280 | PLASMA MEDIATED ASHING PROCESSES - A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O | 09-22-2011 |
20110215262 | Method for Improving Implant Uniformity During Photoresist Outgassing - A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction. | 09-08-2011 |
20110180097 | THERMAL ISOLATION ASSEMBLIES FOR WAFER TRANSPORT APPARATUS AND METHODS OF USE THEREOF - An apparatus for treating a workpiece, the apparatus comprising a first chamber configured to treat the workpiece at an elevated temperature, the first chamber including an opening for receiving the workpiece; a second chamber in operative communication with the first chamber, the second chamber including an opening for transferring the workpiece to and from the first chamber, wherein the first chamber opening is aligned with the second chamber opening, and wherein a selected one of the first and the second chambers comprises a gate valve configured to selectively open and close access to the first and second chamber openings; and a thermal isolation plate formed of a material effective to substantially prevent heat transfer from the first chamber to the second chamber, wherein the thermal isolation plate is disposed about the first and second chamber openings in a sealing relationship. | 07-28-2011 |
20110171817 | Aromatic Molecular Carbon Implantation Processes - Methods for implanting an aromatic carbon molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing aromatic carbon molecule in an ion source to create a plasma and produce aromatic carbon molecules and its ionized lower mass byproducts. The ionized aromatic carbon molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized aromatic carbon molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece. | 07-14-2011 |
20110136346 | Substantially Non-Oxidizing Plasma Treatment Devices and Processes - Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes. | 06-09-2011 |
20110108058 | METHOD AND APPARATUS FOR CLEANING RESIDUE FROM AN ION SOURCE COMPONENT - Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed. | 05-12-2011 |
20110101213 | METHOD AND SYSTEM FOR INCREASING BEAM CURRENT ABOVE A MAXIMUM ENERGY FOR A CHARGE STATE - Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained. | 05-05-2011 |
20110027957 | METHOD OF DOPING SEMICONDUCTORS - A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant. | 02-03-2011 |
20110012033 | Adjustable Louvered Plasma Electron Flood Enclosure - An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable. | 01-20-2011 |
20110001059 | Use of Beam Scanning to Improve Uniformity and Productivity of a 2D Mechanical Scan Implantation System - An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction. | 01-06-2011 |
20100308215 | System and Method for Ion Implantation with Improved Productivity and Uniformity - A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current. | 12-09-2010 |
20100289510 | METHOD AND SYSTEM FOR DETECTION OF SOLID MATERIALS IN A PLASMA USING AN ELECTROMAGNETIC CIRCUIT - A method for solid material detection in a medium includes receiving an exhaust gas downstream with respect to a workpiece from which a photoresist material is removed. An electromagnetic circuit is configured to include the exhaust gas, the exhaust gas is excited with electromagnetic energy and an impedance value of the electromagnetic circuit is determined, wherein the impedance value corresponds to an amount of solid material within the exhaust gas. | 11-18-2010 |
20100187447 | NON-CONDENSING THERMOS CHUCK - The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber. | 07-29-2010 |
20100181499 | ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION - An ion implantation method and system that incorporate beam neutralization to mitigate beam blowup, which can be particularly problematic in low-energy, high-current ion beams. The beam neutralization component can be located in the system where blowup is likely to occur. The neutralization component includes a varying energizing field generating component that generates plasma that neutralizes the ion beam and thereby mitigates beam blowup. The energizing field is generated with varying frequency and/or field strength in order to maintain the neutralizing plasma while mitigating the creation of plasma sheaths that reduce the effects of the neutralizing plasma. | 07-22-2010 |
20100181470 | ION BEAM ANGLE CALIBRATION AND EMITTANCE MEASUREMENT SYSTEM FOR RIBBON BEAMS - An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate. | 07-22-2010 |
20100171044 | Vapor Compression Refridgeration Chuck for Ion Implanters - Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece. | 07-08-2010 |
20100159153 | ELECTROSTATIC CHUCK SHIELDING MECHANISM - An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck. | 06-24-2010 |
20100155623 | ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS - Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece. | 06-24-2010 |
20100142114 | ELECTROSTATIC CHUCK WITH COMPLIANT COAT - The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®. | 06-10-2010 |
20100142113 | DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK - One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met. | 06-10-2010 |
20100130017 | FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS - Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described. | 05-27-2010 |
20100110604 | ELECTROSTATIC CHUCK GROUND PUNCH - An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece. | 05-06-2010 |
20100110603 | WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS - An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece. | 05-06-2010 |
20100072402 | EXTRACTION ELECTRODE MANIPULATOR - An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface. | 03-25-2010 |
20100065761 | ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION - A deflection component suitable for use in an ion implantation system comprises multiple electrodes that can be selectively biased to cause an ion beam passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc.). | 03-18-2010 |
20100055807 | PLASMA ASHING APPARATUS AND ENDPOINT DETECTION PROCESS - A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials. | 03-04-2010 |
20100038553 | SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION - The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam. | 02-18-2010 |
20100012861 | METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION - An ion beam angle detection apparatus, comprising a linear drive assembly fixedly attached to a moveable profiler assembly, wherein the profiler assembly comprises, a profiler having a profiler aperture formed within a profiler top plate and a profiler sensor assembly, a moveable angle mask assembly comprising a moveable angle mask with a mask aperture, wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam. | 01-21-2010 |
20090321657 | SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY - An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam. | 12-31-2009 |
20090321632 | SYSTEM AND METHOD FOR REDUCING PARTICLES AND CONTAMINATION BY MATCHING BEAM COMPLEMENTARY APERTURE SHAPES TO BEAM SHAPES - An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementary aperture located downstream of the mass analyzer and along the beam path, the beam complementary aperture having a size and shape corresponding to a cross-sectional beam envelope of the ion beam. | 12-31-2009 |
20090321631 | LOW-INERTIA MULTI-AXIS MULTI-DIRECTIONAL MECHANICALLY SCANNED ION IMPLANTATION SYSTEM - An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint. | 12-31-2009 |
20090321630 | POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS - A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals. | 12-31-2009 |
20090321625 | Ion Implanter Having Combined Hybrid and Double Mechanical Scan Architecture - A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam. | 12-31-2009 |
20090314958 | METHODS FOR IMPLANTING B22Hx AND ITS IONIZED LOWER MASS BYPRODUCTS - Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece. | 12-24-2009 |
20090277871 | PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE FORMATION OF A PROTECTIVE LAYER BEFORE AND/OR DURING THE PLASMA MEDIATED ASHING PROCESS - Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss. | 11-12-2009 |
20090273878 | GAS BEARING ELECTROSTATIC CHUCK - An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force. | 11-05-2009 |
20090272918 | SYSTEM AND METHOD OF PERFORMING UNIFORM DOSE IMPLANTATION UNDER ADVERSE CONDITIONS - An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element. | 11-05-2009 |
20090267001 | LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION - An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece. | 10-29-2009 |
20090266997 | ION SOURCE WITH ADJUSTABLE APERTURE - An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture. | 10-29-2009 |
20090236547 | EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER - A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus. | 09-24-2009 |
20090215282 | PROCESSES FOR CURING SILICON BASED LOW-K DIELECTRIC MATERIALS - Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species. | 08-27-2009 |
20090200493 | METHODS FOR IN SITU SURFACE TREATMENT IN AN ION IMPLANTATION SYSTEM - A system and methods are provided for mitigating or removing workpiece surface contaminants or conditions. Methods of the invention provide treatment of the wafer surface to provide a known surface condition. The surface condition can then be maintained during and following implantation of the workpiece surface with a dopant. | 08-13-2009 |
20090189766 | REMOTE WAFER PRESENCE DETECTION WITH PASSIVE RFID - The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer arm located inside a vacuum chamber of an ion implantation system, a reader located outside the vacuum chamber, and wherein the RFID tag provides an indication relating to whether or not a wafer is secured by the transfer arm. | 07-30-2009 |
20090114841 | DOUBLE PLASMA ION SOURCE - An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma. | 05-07-2009 |
20090039664 | WORKPIECE GRIPPING INTEGRITY SENSOR - The present invention involves a workpiece gripping integrity device or method comprising a charge-transfer sensing device, configured to detect a change in charge associated with the gripper arm assembly based on a grip condition thereof. | 02-12-2009 |
20090032727 | ELEVATED TEMPERATURE RF ION SOURCE - An elevated temperature RF ion source system, comprising an ion source body, an RF antenna coil external to the ion source body, a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil, at least one power supply, a gas delivery system operatively coupled to the ion source body, a vacuum condition between the outside surface of the ion source body and the RF antenna coil, the RF antenna coil operatively coupled to the at least one power supply, and a water cooling system operatively coupled to the RF antenna coil and the vacuum enclosure. | 02-05-2009 |
20080230713 | ION SOURCE ARC CHAMBER SEAL - An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall. | 09-25-2008 |
20080224491 | Workpiece Gripping Device - A gripper for use with a robot includes a support body for removably attaching the gripper to a moveable arm and a workpiece contact body having a groove extending along at least a portion of the contact body for engaging a curved outer edge of the workpiece. A coupling member connects the support body to the workpiece contact member and includes a flexure component that flexes to allow radial and/or tangential relative movement of the workpiece contact body with respect to the support body to diminish slippage between the workpiece and the contact body as the gripper engages the workpiece. | 09-18-2008 |