SILICONFILE TECHNOLOGIES INC. Patent applications |
Patent application number | Title | Published |
20150325618 | CMOS IMAGE SENSOR INCLUDING COLOR MICROLENS, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a CMOS image sensor including a color microlens, in which the color characteristics of a microlens are improved by replacing a microlens made of a transparent material with a material having characteristics similar to those of a color filter, and a manufacturing method thereof. In accordance with the CMOS image sensor including a color microlens and the manufacturing method thereof according to the present invention, color characteristics is improved. Since formation processes of a color filter and a microlens are performed at one time, additional processes for planarization and step difference adjustment are not necessary, so that an entire process is simplified. In the progress of light, since there is no interface between materials, reflection, refraction and the like are reduced, so that it is possible to increase light efficiency. | 11-12-2015 |
20150311239 | CMOS IMAGE SENSOR INCLUDING INFRARED PIXELS HAVING IMPROVED SPECTRAL PROPERTIES, AND METHOD OF MANUFACTURING SAME - The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved. | 10-29-2015 |
20140191357 | MULTI-SUBSTRATE IMAGE SENSOR HAVING A DUAL DETECTION FUNCTION - The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel. | 07-10-2014 |
20140138847 | METHOD FOR ELECTRICALLY CONNECTING WAFERS USING BUTTING CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE FABRICATED THROUGH THE SAME - The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved. | 05-22-2014 |
20130242147 | PIXEL ARRAY HAVING WIDE DYNAMIC RANGE AND GOOD COLOR REPRODUCTION AND RESOLUTION AND IMAGE SENSOR USING THE PIXEL ARRAY - Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes. | 09-19-2013 |
20130189828 | METHOD FOR FORMING PAD IN WAFER WITH THREE-DIMENSIONAL STACKING STRUCTURE - A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process. | 07-25-2013 |
20120301996 | BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME - A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size. | 11-29-2012 |
20120295389 | IMAGE SENSOR HAVING WAVE GUIDE AND METHOD FOR MANUFACTURING THE SAME - An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode. | 11-22-2012 |
20120264251 | SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. | 10-18-2012 |
20110207258 | METHOD FOR FORMING PAD IN WAFER WITH THREE-DIMENSIONAL STACKING STRUCTURE - A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process. | 08-25-2011 |
20110193968 | IMAGE SENSOR CAPABLE OF REALIZING NIGHT-PHOTOGRAPHING AND FUNCTIONS OF PROXIMITY SENSOR AND ILLUMINANCE SENSOR - An image sensor capable of realizing night-photographing and functions of a proximity sensor and an illuminance sensor. The image sensor includes a light source for emitting light toward a subject; a light source control section for controlling current applied to the light source; an illuminance sensor section for sensing an illuminance of surrounding environment; and a sensor section having an image sensor unit for sensing an image signal. | 08-11-2011 |
20110172129 | Biochip Having Image Sensor with Back Side Illumination Photodiode - A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer. | 07-14-2011 |
20110156113 | BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME - A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size. | 06-30-2011 |
20110103704 | JPEG DECODER CAPABLE OF SCALING AND SCALING METHOD USING THE SAME - A JPEG decoder having a scaling function includes an inverse discrete cosine transform block, wherein the JPEG decoder selectively performs an inverse discrete cosine transform on a part of pixel data of a macroblock through the inverse discrete cosine transform block and outputs a scaled image file. The JPEG decoder and the scaling method using the JPEG decoder increase a decoding speed, thereby enabling an image to be output in real time, especially when the JPEG decoder and/or the scaling method are applied to a mobile field. Also, the JPEG decoder and the scaling method using the JPEG decoder can achieve an efficient scaling, even without a separate circuit for scaling, thereby reducing a circuit size and the number of components. | 05-05-2011 |
20100330785 | METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR THIN FILM - Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate through induction heating using photo-charges. The method of manufacturing a crystalline semiconductor thin film includes a process of forming a low-concentration semiconductor layer on an inexpensive amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate and a process of crystallizing the low-concentration semiconductor layer through an induction heating manner using photo-charges. Accordingly, a low-concentration crystalline semiconductor thin film having characteristics better than those of general amorphous or poly-crystalline semiconductor thin film can be obtained by using simple processes at low production cost. | 12-30-2010 |
20100328457 | APPARATUS ACQUIRING 3D DISTANCE INFORMATION AND IMAGE - An apparatus for acquiring distance information and images includes an image sensor unit including a left image sensor, a central image sensor, and a right image sensor, which are arranged on one board while being spaced apart from one another at a predetermined interval, and a distance information extraction unit that extracts distance information by comparing an image of a reference object acquired through the central image sensor with an image of the reference object acquired through the left image sensor and an image of the reference object acquired through the right image sensor. | 12-30-2010 |
20100328437 | DISTANCE MEASURING APPARATUS HAVING DUAL STEREO CAMERA - A distance measuring apparatus having dual stereo cameras includes a first stereo camera including left and right CMOS image sensors provided on one board and detecting parallax of a reference object to extract distance information, the left CMOS image sensor being spaced apart from the right CMOS image sensor at a predetermined interval, a second stereo camera separated from the first stereo camera at a predetermined distance, including left and right CMOS image sensors provided on one board, and detecting parallax of the reference object to extract distance information, the left CMOS image sensor being spaced apart from the right CMOS image sensor at a predetermined interval, and a depth map matching unit that extracts distance information on the reference object by comparing the distance information on the reference object acquired through the first stereo camera with the distance information on the reference object acquired through the second stereo camera. | 12-30-2010 |
20100323926 | DIAGNOSIS DEVICE AND METHOD OF MANUFACTURING THE DIAGNOSIS DEVICE - Provided are a diagnosis device in which a bio-chemical reaction between a reference sample and a target sample occurs and a result of the bio-chemical reaction can be detected and a method of manufacturing the diagnosis device. The diagnosis device includes an image sensor where a plurality of photo-detectors are formed; a polymer layer which is made of a polymer material and formed on an upper portion of the image sensor; and a plurality of wells which are formed corresponding to the plurality of photo-detectors on the polymer layer, wherein an inner portion of each well is empty. | 12-23-2010 |
20100322528 | APPARATUS AND METHOD FOR ROTATING IMAGE WITHOUT USING MEMORY - An image rotation method without using a memory includes the steps of: reading, by a JPEG encoder, an input image having m×n macroblocks (wherein “m” and “n” are natural numbers); rotating image data of the respective macroblocks by a predetermined angle in a predetermined direction when encoding in the JPEG encoder; assigning and inputting a sequence of each rotated image data when encoding in the JPEG encoder; instructing the macroblocks to be output in a sequence changed from an initial input sequence of the macroblocks through use of a program when decoding in a JPEG decoder; and outputting an image rotated by the predetermined angle in the predetermined direction. | 12-23-2010 |
20100314543 | IMAGE SENSOR FOR MEASURING ILLUMINATION, PROXIMITY AND COLOR TEMPERATURE - Disclosed is an image sensor for measuring illumination, proximity and color temperature, including: a light source unit configured to irradiate infrared with a wavelength of a specific band onto an object; a light source controller configured to control power supplied to the light source unit; an infrared transmission filter configured to allow only the infrared and visible ray with the wavelength of the specific band among light incident through a lens after being reflected by the object to selectively transmit therethrough; a first sensing unit provided with an image pixel for acquiring an image of the object introduced through the infrared transmission filter; and a second sensing unit configured to receive the infrared and the visible ray having passed through the infrared transmission filter and measure current illumination, proximity to the object and color temperature of the object. | 12-16-2010 |
20100284611 | IMAGE SENSOR AND IMAGE SENSING METHOD FOR CHARACTER RECOGNITION - A system for recognizing a text image in an image photographed by an image sensor as characters, searching the characters in an electronic dictionary, and displaying a search result on a window. The image sensor includes a photographing section configured to photograph an image; a determination section configured to determine the photographed image as at least one of a text image region and a non-text image region; and a conversion section configured to convert information of the determined text image region into binary information. | 11-11-2010 |
20100283086 | METAL OPTICAL FILTER CAPABLE OF PHOTO LITHOGRAPHY PROCESS AND IMAGE SENSOR INCLUDING THE SAME - Disclosed is a metal optical filter capable of a photo-lithography process and an image sensor including the same, and more particularly, a metal optical filter capable of a photo-lithography process, which can quite freely adjust the transmission band and transmittance thereof, even with a small number of metal layers, and simultaneously, can be actually applied in a CMOS process because it is possible to achieve nanoscale patterning by the photo-lithography process, and an image sensor including the metal optical filter. The metal optical filter capable of a photo-lithography process includes a plurality of metal rods arranged in parallel with each other at an equal nanoscale interval; and an insulation material formed between the plurality of metal rods and on upper and lower surfaces of the plurality of metal rods, wherein the metal rod is formed to comprise an upper Ti layer, an Al layer, and a lower TiN layer. | 11-11-2010 |
20100271516 | IMAGE SENSOR WITH A SPECTRUM SENSOR - There is provided an image sensor with a spectrum sensor including an image sensor region having a plurality of light-detection parts and a spectrum sensor region located in the image sensor region. The present invention provides an advantage of manufacturing a low-cost image sensor with a spectrum sensor. Thus, the image sensor with a spectrum sensor is commercially available to measure the structure and quantity of an organic material in an object in a simple manner. | 10-28-2010 |
20100264504 | IMAGE SENSOR HAVING WAVE GUIDE AND METHOD FOR MANUFACTURING THE SAME - An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode. | 10-21-2010 |
20100264464 | IMAGE SENSOR PHOTODIODE ARRANGEMENT - The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel. | 10-21-2010 |
20100259598 | APPARATUS FOR DETECTING THREE-DIMENSIONAL DISTANCE - A three-dimensional distance detecting apparatus includes a stereo vision camera configured to detect a parallax of a selected point to be detected; and a pattern generating device configured to generate a pattern and project the pattern on the selected point when the selected point is a subject which does not induce a parallax. | 10-14-2010 |
20100258890 | UNIT PIXEL OF IMAGE SENSOR HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A unit pixel of an image sensor having a three-dimensional structure includes a first chip and a second chip which are stacked, one of the first chip and the second chip having a photodiode, and the other of the first chip and the second chip having a circuit for receiving information from the photodiode and outputting received information. The first chip includes a first pad which is projectedly disposed on an upper surface of the first chip in such a way as to define a concavo-convex structure, and the second chip includes a second pad which is depressedly disposed on an upper surface of the second chip in such a way as to define a concavo-convex structure corresponding to the concavo-convex structure of the first chip. The first chip and the second chip are mated with each other through bonding of the first pad and the second pad. | 10-14-2010 |
20100252718 | 4T-4S STEP & REPEAT UNIT PIXEL AND IMAGE SENSOR INCLUDING THE UNIT PIXEL - Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges. | 10-07-2010 |
20100247382 | FLUORESCENT BIOCHIP DIAGNOSIS DEVICE - Disclosed is a fluorescent biochip diagnosis device including: an image sensor having a plurality of photo-detectors; and a band-pass filter unit having a plurality of band-pass filters formed on a plurality of the photo-detectors, wherein a plurality of the band-pass filters are implemented by forming a nanostructure pattern in a metal layer. Since the fluorescent biochip diagnosis device has little optical loss due to a short interval between the biochip and the photo-detector, excellent sensitivity can be provided. Also, since signals can be simultaneously measured by combining light beams having a short wavelength used as an illumination depending on a type of a fluorescent protein material, cost of the diagnosis device and a diagnosis time can be reduced. | 09-30-2010 |
20100245826 | ONE CHIP IMAGE SENSOR FOR MEASURING VITALITY OF SUBJECT - Provided is a one-chip vitality measuring image sensor. The image sensor includes one chip where a plurality of IR pixels and a plurality of visible pixels are alternately disposed, IR pass filters which are disposed on the IR pixels, and color pass filters which are disposed on the visible pixels. In the image sensor, IR strength and color strengths are obtained from light which is incident to the IR pixels and the visible pixels, and a vitality of a subject is measured by comparing the IR strength with the color strengths. | 09-30-2010 |
20100239457 | BIOCHIP - Provided is a biochip including a high-sensitivity image sensor. The biochip includes: a biochip layer including a plurality of reaction zones in which biochemical reactions occur formed as concaves, the reaction zone including a reference material at a lower portion and a target material at an upper portion; and an image sensor layer which is formed below the biochip layer and includes a plurality of photo detectors. Since the biochip is implemented as a single chip including the biochip layer and the image sensor layer, light loss in the luminescence or fluorescence operation can be reduced. In addition, additional devices such as a scanner which are needed for a general biochip are not needed, so that sensitivity is improved, and low-cost biochips can be implemented. | 09-23-2010 |
20100237455 | PHOTOTRANSISTOR HAVING A BURIED COLLECTOR - A phototransistor used for an image sensor is provided. The phototransistor can reduce a dark current that occurs in the phototransistor and improve sensitivity at low luminance without crosstalk with a neighboring pixel or an image lag by including a buried collector. In the phototransistor including the buried collector, since the collector is not directly connected to outside, the phototransistor has a low dark current and a high photosensitive characteristic at low luminance. Since each image sensor is isolated, crosstalk between pixels or an image lag does not occur. | 09-23-2010 |
20100232676 | IMAGE SENSOR AND METHOD FOR DETECTING COUNTERFEIT BILL - An image sensor for detecting a counterfeit bill includes an ultraviolet ray emitting section for emitting ultraviolet rays to a bill to be checked; an image sensor section for acquiring a first image as an image obtained by photographing the bill to be checked in a state in which ultraviolet rays are not emitted by turning off the ultraviolet ray emitting section, and a second image as an image obtained by photographing the bill to be checked in a state in which ultraviolet rays are emitted by turning on the ultraviolet ray emitting section; a storing section for storing the first image and the second image; and a counterfeit bill detecting section for extracting a fluorescent image by removing the first image from the second image stored in the storing section and determining whether the bill to be checked is a counterfeit bill or an original bill. | 09-16-2010 |
20100213348 | SEPARATED UNIT PIXEL PREVENTING SENSITIVITY REDUCTION AND THE DRIVING METHOD USING THE UNIT PIXEL - Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area. | 08-26-2010 |
20100200895 | UNIT PIXEL IMPROVING IMAGE SENSITIVITY AND DYNAMIC RANGE - Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply. | 08-12-2010 |
20100200752 | IMAGE SENSOR CAPABLE OF JUDGING PROXIMITY TO SUBJECT - An image sensor is capable of judging proximity to a subject. The image sensor judges the distance to the subject using a change in output voltage value by the presence or absence of a specific band of wavelengths of infrared (IR) measured by optical sensors such as proximity pixels. Thereby, the image sensor enables an ordinary image sensor to easily realize a proximity function, and makes it possible to minimize damage to a quality of image when the image is picked up in a night photography mode or in a proximity photography mode. | 08-12-2010 |
20100196206 | DIAGNOSIS DEVICE USING IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted. | 08-05-2010 |
20100193848 | IMAGE SENSOR OF STACKED LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF - Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced. | 08-05-2010 |
20100182467 | UNIT PIXEL HAVING 2-TRANSISTOR STRUCTURE FOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A unit pixel having a pixel constructed with a photodiode and a 2-transistor for an image sensor is disclosed. The unit pixel having a 2-transistor structure for an image sensor includes: a photodiode containing impurities having an opposite type of a semiconductor material; a reset transistor connected to the photodiode to initialize the photodiode; and a transistor having selecting and reading-out functions connected to the photodiode to have functions of controlling connection between a pixel and an external lead-out circuit and reading-out the information of the pixel. Accordingly, an aperture surface rises and a pixel size decreases, so that sensitivity increases. Also, the fill factor of the photodiode increases significantly due to a decrease of the number of the transistor, so that the sensitivity increases and costs reduce. | 07-22-2010 |
20100177221 | PIXEL ARRAY HAVING WIDE DYNAMIC RANGE AND GOOD COLOR REPRODUCTION AND RESOLUTION AND IMAGE SENSOR USING THE PIXEL ARRAY - Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes. | 07-15-2010 |
20100176271 | PIXEL ARRAY PREVENTING THE CROSS TALK BETWEEN UNIT PIXELS AND IMAGE SENSOR USING THE PIXEL - The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact. | 07-15-2010 |
20100133643 | IMAGE SENSOR PIXEL AND METHOD THEREOF - A method of manufacturing a pixel of an image sensor including a protruded photodiode capable of improving photosensitivity and reducing crosstalk between neighboring pixels and a pixel of an image sensor formed using the method are provided. The pixel of the semiconductor image sensor includes a protrudedly shaped photodiode on a surface of a semiconductor substrate. A surface area of the photodiode with respect to a surface area of the image sensor pixel increases to improve photosensitivity, and a microlens is not needed due to the improvement of the fill factor. In addition, the crosstalk of neighboring pixels can be removed. | 06-03-2010 |
20100118131 | FINGERPRINT RECOGNITION DEVICE AND USER AUTHENTICATION METHOD FOR CARD INCLUDING THE FINGERPRINT RECOGNITION DEVICE - Provided are a fingerprint recognition device which performs a fingerprint recognition function and can be inserted into a card, the card including the fingerprint recognition device, and a user authentication method for the card including the fingerprint recognition device. The fingerprint recognition device includes a fingerprint touch unit that a fingerprint touches and an image sensor capturing a fingerprint pattern by using a reflected wave reflected from the fingerprint touch unit | 05-13-2010 |
20100108137 | CRYSTALLINE SOLAR CELL HAVING STACKED STRUCTURE AND METHOD OF MANUFACTURING THE CRYSTALLINE SOLAR CELL - Provided are a crystalline solar cell having a stacked structure capable of increasing light absorption efficiency and preventing deterioration in a semiconductor and a method of manufacturing the crystalline solar cell. The crystalline solar cell having a stacked structure includes a non-conductive lattice buffer layer which is made of a non-conductive material and formed between crystalline solar cell layers, wherein the non-conductive lattice buffer layer electrically connects the solar cell layers to each other by a tunneling effect. The method of manufacturing the crystalline solar cell includes steps of forming a crystalline first solar cell layer, forming a non-conductive lattice buffer layer using a non-conductive material on the first solar cell layer, and forming a crystalline second solar cell layer on the non-conductive lattice buffer layer. | 05-06-2010 |
20100096008 | SEMITRANSPARENT CRYSTALLINE SILICON THIN FILM SOLAR CELL - Provided is a semitransparent crystalline silicon thin film solar cell using a crystalline silicon thin film, including a transparent substrate, an antireflection layer, first transparent electrodes, electricity generation regions, second transparent electrodes, insulating layers. The electricity generation regions include crystalline silicon thin films. Accordingly, the semitransparent crystalline silicon thin film solar cell has a simpler manufacturing process as compared with a semitransparent thin film solar cell using a conventional amorphous thin film and can control transmittance by controlling a thickness of the crystalline thin film without additional apparatuses. | 04-22-2010 |
20100019130 | CHIP-STACKED IMAGE SENSOR - A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads. | 01-28-2010 |
20100013907 | Separation Type Unit Pixel Of 3-Dimensional Image Sensor and Manufacturing Method Thereof - A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. Accordingly, manufacturing processes can be simplified by constructing the upper wafer using only a photodiode and the lower wafer using the pixel array region except the photodiode, and costs are reduced since transistors are not included in the upper wafer portion, which in turn cannot affect the interaction with light. | 01-21-2010 |
20090309008 | 4 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 4 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS - A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT | 12-17-2009 |
20090135283 | PIXEL ARRAY STRUCTURE FOR CMOS IMAGE SENSOR AND METHOD OF THE SAME - Provided is a pixel array structure and of a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of arranging the same in which unit pixels are arranged diagonally to adjacent unit pixels in a row and column direction. For the arrangement, a pixel array in even rows is shifted to a half of a pitch in a column direction with respect to a pixel array in odd rows. | 05-28-2009 |
20090058993 | CMOS STEREO CAMERA FOR OBTAINING THREE-DIMENSIONAL IMAGE - A CMOS stereo camera for obtaining a three-dimensional image, in which two CMOS image sensors having the same characteristics are disposed on a single semiconductor substrate, is provided. The CMOS image sensors have image planes which are located on the same plane by disposing the two CMOS image sensors on the same semiconductor substrate. A digital signal processor (DSP) for processing a three-dimensional image is disposed between the CMOS image sensors. Optical axes of the CMOS image sensors are parallel with each other and orthogonal to the image planes. Since optical devices formed on the CMOS image sensors can be manufactured through the same processes, distortion of the optical axes between the two CMOS image sensors can be minimized. | 03-05-2009 |
20090014761 | IMAGE SENSOR PIXEL AND FABRICATION METHOD THEREOF - Provided is an image sensor pixel in which a specific or entire area of a field oxide layer inside the pixel can be used as a photodiode so as to increase a fill factor, and a fabrication method thereof. The image sensor pixel includes: a photodiode which is buried inside a semiconductor substrate; and pixel transistors which are formed after the photodiode is formed. In addition, the image sensor pixel includes: pixel transistors; a field oxide layer which separates the pixel transistors; and a photodiode which is located at the lower portion in a specific or entire area of the field oxide layer. In addition, the fabrication method includes: (a) forming a trench region in a specific area of a semiconductor substrate; (b) forming a photodiode which includes at least a portion of the trench region; and (c) forming pixel transistor, after the photodiode is formed. Accordingly, a surface area of a photodiode increases, thereby improving a fill factor and photosensitivity. In addition, in a unit pixel of an image sensor, the entire pixel area becomes a photodiode region except for a region where transistors are formed, thereby maximizing the fill factor. | 01-15-2009 |
20090008737 | Image Sensor Having Anti-Reflection Film and Method of Manufacturing the Same - Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. | 01-08-2009 |
20080304154 | Voice Coil Module - The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens. | 12-11-2008 |
20080293184 | Method of Bonding Aluminum Electrodes of Two Semiconductor Substrates - A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al | 11-27-2008 |
20080251823 | Separation Type Unit Pixel Having 3D Structure for Image Sensor and Manufacturing Method Thereof - A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3 D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an | 10-16-2008 |
20080224187 | Image Sensor Pixel and Method of Fabricating the Same - A new structure of a photodiode of a pixel in CMOS image sensor and a method of fabricating the same are provided. The photodiode is fabricated by using one photo mask, so that the number of masks decreases and the fabrication processes are simplified. In addition, two conducting layers constituting a photodiode are self-aligned, so that a fabrication process for connecting the photodiode and a transfer transistor is not required. Accordingly, a problem of channeling generated in a lower portion of a gate of the transfer transistor can be solved, so that an improved pixel can be fabricated. | 09-18-2008 |