MITSUBISHI MATERIALS CORPORATION Patent applications |
Patent application number | Title | Published |
20160138135 | COPPER ALLOY FOR ELECTRONIC/ELECTRICAL EQUIPMENT, COPPER ALLOY THIN SHEET FOR ELECTRONIC/ELECTRICAL EQUIPMENT, CONDUCTIVE COMPONENT FOR ELECTRONIC/ELECTRICAL EQUIPMENT, AND TERMINAL - One aspect of this copper alloy for an electronic and electrical equipment contains: more than 2.0 mass % to 36.5 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.15 mass % to less than 1.00 mass % of Ni; and 0.005 mass % to 0.100 mass % of P, with the balance containing Cu and inevitable impurities, wherein atomic ratios of amounts of elements satisfy 3.005-19-2016 | |
20160133780 | COMPOSITION FOR MANUFACTURING ELECTRODE OF SOLAR CELL, METHOD OF MANUFACTURING SAME ELECTRODE, AND SOLAR CELL USING ELECTRODE OBTAINED BY SAME METHOD - A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm. | 05-12-2016 |
20160122849 | COPPER ALLOY WIRE - This copper alloy wire is a copper alloy wire which is made of a precipitation hardening-type copper alloy containing Co, P, and Sn and is manufactured using a continuous cast-rolling method or cold working of a continuous cast wire rod manufactured using a continuous casting method, in which the copper alloy wire has a composition including Co: more than or equal to 0.20 mass % and less than or equal to 0.35 mass %, P: more than 0.095 mass % and less than or equal to 0.15 mass %, and Sn: more than or equal to 0.01 mass % and less than or equal to 0.5 mass % with a balance being Cu and inevitable impurities. | 05-05-2016 |
20160111277 | COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING SAME - A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased. | 04-21-2016 |
20160111179 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL - A copper alloy for electric and electronic devices includes: Zn from more than 2 mass % to less than 23 mass %; Sn at 0.1 mass % or more and 0.9 mass % or less; Ni at 0.05 mass % or more and less than 1.0 mass %; Fe at 0.001 mass % or more and less than 0.10 mass %; P at 0.005 mass % or more and 0.1 mass % or less; and a balance including Cu and unavoidable impurities, wherein a ratio Fe/Ni satisfies 0.002≦Fe/Ni<1.5 by atomic ratio, a ratio (Ni+Fe)/P satisfies 3<(Ni+Fe)/P<15 by atomic ratio, a ratio Sn/(Ni+Fe) satisfies 0.304-21-2016 | |
20160079044 | SPUTTERING TARGET AND PRODUCTION METHOD OF THE SAME - A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 μm or less. | 03-17-2016 |
20160059325 | ROUGHING END MILL - Even if chips enter a gap between a flank face and a surface to be worked, the defect of the flank face or a cutting edge is suppressed by the control of the flow of the chips. A plurality of cutting edges, which are undulated in wave forms in a direction of an axis, are formed on an outer periphery of a front end portion of an end mill body rotating about the axis so that phases of the wave forms are displaced from each other in a path of rotation about the axis; flank faces of the cutting edges are covered with a coating film; and rough surface regions and smooth surface regions are alternately formed on the surface of at least portions of the coating film, which are close to the cutting edges, in the direction of the axis. | 03-03-2016 |
20160047017 | HOT-ROLLED COPPER PLATE - A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 μm or less, and a (Σ3+Σ9) grain boundary length ratio (L σ3+σ9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (σ3+σ9) of a Σ3 grain boundary length Lσ3 and a Σ9 grain boundary length Lσ9, being 28% or greater. | 02-18-2016 |
20160040285 | SURFACE COATED CUTTING TOOL - A hard coating layer on a cutting tool includes at least a Ti and Al complex nitride or carbonitride layer and has an average layer thickness of 1 to 20 μm. In a case where a composition of the complex nitride or carbonitride layer is expressed by: (Ti | 02-11-2016 |
20160031018 | REPLACEABLE MACHINING HEAD - Provided is a replaceable machining head wherein: fractures on the tool attaching portion do not occur; the production cost is minimized; the tool life of the working tool will be lengthened; and the head body is free from a risk of falling off during replacement. In the replaceable machining head, a cutting edge section is formed on the front side of a head body; a tool attaching portion to which a working tool is to be attached, is formed on the rear end side of the cutting edge section; tool attaching faces are formed in the tool attaching potion; the surface of the head body 1 is coated with a coating film; and the number of droplets or macro particles having convex shapes with a size of 0.3 μm to 5.0 μm, is 200 or less, per area of 40 μm×60 μm on the surface of the coating film over the tool attaching faces. | 02-04-2016 |
20160021729 | SUBSTRATE FOR POWER MODULES, SUBSTRATE WITH HEAT SINK FOR POWER MODULES, AND POWER MODULE - The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t | 01-21-2016 |
20160016265 | Au-Sn-Bi ALLOY POWDER PASTE, Au-Sn-Bi ALLOY THIN FILM, AND METHOD FOR FORMING Au-Sn-Bi ALLOY THIN FILM - The present invention provides to an Au—Sn—Bi alloy film which has an excellent bondability on a metalized layer formed on an LED element or a substrate as a bonding layer made of the Au—Sn—Bi alloy and is uniform and thin. In the present invention, an Au—Sn—Bi alloy thin film which has the thickness of 5 μm or less and includes at least a eutectic structure can be formed by using an Au—Sn—Bi alloy powder paste that mixes the Au—Sn alloy powder containing 20 wt % to 25 wt % of Sn, 0.1 wt % to 5.0 wt % of Bi, and a balance of Au, and having a particle diameter of 10 μm or less with an RA flux of 15 wt % to 30 wt %, screen printing the Au—Sn—Bi alloy powder paste in a predetermined region on the Au metallized layer, and subsequently, heating, melting and then solidifying the Au—Sn—Bi alloy powder. | 01-21-2016 |
20160002983 | DRILLING TOOL - The inner bit is provided with: a supply hole which is open at the distal end portion of the inner bit; and a discharge groove which is formed in an outer peripheral surface of the inner bit and extends in the direction of the axial line. The supply hole is provided with: a distal end blow hole which is open in a distal end surface of the distal end portion of the inner bit; and an outer peripheral blow hole which is open in an outer peripheral surface of the distal end portion of the inner bit. An outer peripheral groove via which the outer peripheral blow hole communicates with the discharge groove is formed in the outer peripheral surface of the inner bit. The outer peripheral groove is covered with the ring bit from the outside in a radial direction. | 01-07-2016 |
20160002979 | DIGGING BIT - A digging bit includes a reaming portion whose diameter is larger than a rear end portion of a bit body, and which is formed in a front end portion of the bit body rotated around an axis, a digging tip which is arranged in a front end portion of the reaming portion, a debris groove which extends in a direction of an axis, and which is formed in an outer peripheral portion of the reaming portion, and a communication groove which communicates with the debris groove, and which is formed from the outer peripheral portion to a rear end portion of the reaming portion. | 01-07-2016 |
20160001375 | SURFACE-COATED CUTTING TOOL - A surface-coated cutting tool includes a lower layer including a Ti compound layer, an intermediate layer including an α-Al | 01-07-2016 |
20150366048 | POWER MODULE SUBSTRATE, HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE, AND HEAT-SINK-ATTACHED POWER MODULE - The power module substrate includes a circuit layer that is formed on a first surface of a ceramic substrate, and a metal layer that is formed on a second surface of the ceramic substrate, in which the metal layer has a first aluminum layer that is bonded to the second surface of the ceramic substrate and a first copper layer that is bonded to the first aluminum layer by solid-phase diffusion bonding. | 12-17-2015 |
20150359635 | MEDICAL DEVICE AND SURFACE MODIFICATION METHOD FOR MEDICAL DEVICE - The invention provides a medical device in which a metallic porous body is joined to at least a part of a surface of the main body of a medical device, and a surface modification method for the medical device. The metallic porous body is formed in multilayers. | 12-17-2015 |
20150357073 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL - A copper alloy for an electric and electronic device includes more than 2.0 mass % to 36.5 mass % of Zn, 0.1 mass % to 0.9 mass % of Sn, 0.05 mass % to less than 1.0 mass % of Ni, 0.5 mass ppm to less than 10 mass ppm of Fe, 0.001 mass % to less than 0.10 mass % of Co, 0.001 mass % to 0.10 mass % of P, and a balance including Cu and unavoidable impurities, in which, ratios between the amounts of the respective elements satisfy 0.002≦Fe/Ni<1.5, 3<(Ni+Fe)/P<15, and 0.312-10-2015 | |
20150348665 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL - The present invention relates to a copper alloy for electric and electronic device, a copper alloy sheet for electric and electronic device, a conductive component for electric and electronic device, and a terminal. The copper alloy for electric and electronic device comprises more than 2.0 mass % and less than 23.0 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.05 mass % to less than 1.00 mass % of Ni; 0.001 mass % to less than 0.100 mass % of Fe; 0.005 mass % to 0.100 mass % of P; and a balance including Cu and unavoidable impurities, in which 0.002≦Fe/Ni<1.500, 3.0<(Ni+Fe)/P<100.0, and 0.1012-03-2015 | |
20150348664 | COPPER ALLOY FOR ELECTRONIC AND ELECTRIC DEVICES, COMPONENT FOR ELECTRONIC AND ELECTRIC DEVICES, AND TERMINAL - A copper alloy for electronic and electric devices has a composition in which the amount of Zr is in a range of 0.05% by mass to 0.15% by mass, the amount of Ca is in a range of 0.001% by mass to less than 0.08% by mass, the amount of Pb is less than 0.05% by mass, the amount of Bi is less than 0.01% by mass, and the balance Cu and inevitable impurities, the ratio Zr/Ca of the amount of Zr to the amount of Ca is 1.2 or more, the copper alloy includes two-phase particles made up of two phases of a phase containing Cu and Zr as main components and a phase containing Cu and Ca as main components and single-phase particles made of a single phase containing Cu and Zr as main components, and the conductivity is more than 88% IACS. | 12-03-2015 |
20150337409 | METHOD OF TREATING RECYCLABLE RAW MATERIALS - A method of treating recyclable raw materials containing valuable metals is provided, the method including the steps of feeding recyclable raw materials (W) containing valuable metals into a rotary kiln furnace ( | 11-26-2015 |
20150328706 | POWER-MODULE SUBSTRATE AND MANUFACTURING METHOD THEREOF - To provide a power-module substrate and a manufacturing method thereof in which small voids are reduced at a bonded part and separation can be prevented. Bonding a metal plate of aluminum or aluminum alloy to at least one surface of a ceramic substrate by brazing, when a cross section of the metal plate is observed by a scanning electron microscope in a field of 3000 magnifications in a depth extent of 5 μm from a bonded interface between the metal plate and the ceramic substrate in a width area of 200 μm from a side edge of the metal plate, residual-continuous oxide existing continuously by 2 μm or more along the bonded interface has total length of 70% or less with respect to a length of the field. | 11-19-2015 |
20150325327 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL - A copper alloy for an electric and electronic devices comprises 23 mass % to 36.5 mass % of Zn; 0.1 mass % to 0.9 mass % of Sn; 0.15 mass % to less than 1.0 mass % of Ni; 0.001 mass % to less than 0.10 mass % of Fe; 0.005 mass % to 0.1 mass % of P; and a balance including Cu and unavoidable impurities, in which 0.002≦Fe/Ni<0.7, 3<(Ni+Fe)/P<15, and 0.311-12-2015 | |
20150325326 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE,CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL - The present invention relates to a copper alloy for electric and electronic device, a copper alloy sheet for electric and electronic device, a conductive component for electric and electronic device, and a terminal. The copper alloy for electric and electronic device includes more than 2.0 mass % to 15.0 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.05 mass % to less than 1.00 mass % of Ni; 0.001 mass % to less than 0.100 mass % of Fe; 0.005 mass % to 0.100 mass % of P; and a remainder comprising Cu and unavoidable impurities, in which 0.002≦Fe/Ni<1.500, 3.0<(Ni+Fe)/P<100.0, and 0.1011-12-2015 | |
20150319877 | POWER MODULE - A power module is provided with a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 μm from the surface of the circuit layer in the solder layer is 10 μm or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test. | 11-05-2015 |
20150319876 | POWER MODULE - In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 μm or more and 20 μm or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test. | 11-05-2015 |
20150318153 | HOT ROLLED PLATE MADE OF COPPER ALLOY USED FOR A SPUTTERING TARGET AND SPUTTERING TARGET - Disclosed is a hot rolled plate produced by hot rolling an ingot cast by continuous casting, in which the plate is made of a copper alloy containing 0.5 to 10.0 at % of Ca and the balance consisting of Cu and inevitable impurities and the average grain size of Cu-α phase crystal grains is 5 to 60 μm in a Cu matrix. | 11-05-2015 |
20150316509 | METHOD FOR MEASURING THICKNESS OF BOILER WATER TUBE - An inspection hole is formed on a side surface of a boiler water tube in a longitudinal direction, a base side of a guide pipe is connected to the inspection hole, and usually, a closing member is attached to the guide pipe. In a case where the thickness of the boiler water tube is measured, the closing member is released from the guide pipe, an ultrasonic probe is inserted into the boiler water tube from a tip side of the guide pipe, and the ultrasonic probe is moved in the boiler water tube. | 11-05-2015 |
20150315695 | METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti | 11-05-2015 |
20150313011 | POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, METHOD OF PRODUCING POWER MODULE SUBSTRATE, PASTE FOR COPPER SHEET BONDING, AND METHOD OF PRODUCING BONDED BODY - A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate ( | 10-29-2015 |
20150308009 | PHOSPHOROUS-CONTAINING COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, METHOD FOR MANUFACTURING SAME, AND ELECTROLYTIC COPPER PLATING METHOD - Provided are a phosphorous-containing copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the phosphorous-containing copper anode. The phosphorous-containing copper anode obtains a crystal grain boundary structure having a special grain boundary ratio Lσ | 10-29-2015 |
20150307525 | COMPOSITION FOR FORMING A THIN LAYER WITH LOW REFRACTIVE INDEX, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF A THIN LAYER WITH LOW REFRACTIVE INDEX - To provide a low refractive index film-forming composition for forming a low refractive index film which has a low refractive index, produces a strong antireflection effect, exhibits excellent adhesiveness with respect to a substrate, and is excellent in water repellency or antifouling properties of the coat surface; a production method of the composition; and a method for forming a low refractive index film. The low refractive index film-forming composition is prepared by generating a hydrolysate of (A) a silicon alkoxide by mixing the (A) silicon alkoxide with (B) water, (C) an inorganic acid or an organic acid, and (D) an organic solvent at a predetermined ratio, and mixing the hydrolysate with (E) silica sol, which is obtained by dispersing fumed silica particles in a liquid medium, at a predetermined ratio. | 10-29-2015 |
20150307396 | FLUIDIZED CALCINER - A fluidized calciner is provided which allows a reduction in the rate of unburned fuel at an outlet of a fluidized calciner to enable sufficient calcination while preventing possible occlusion in a preheater, even when pulverized coal of coal or coke, which has low combustion quality, is used as fuel, based on calculations in accordance with computational fluid dynamics based on the shape of an actual furnace and operational conditions. The present invention provides a fluidized calciner including a tubular furnace body ( | 10-29-2015 |
20150300094 | EXCAVATING TOOL - An excavating tool includes a casing pipe that forms a cylindrical shape about an axis line and in which a stepped portion whose inner diameter is decreased by one step is formed in an inner peripheral portion of an distal end; an inner bit where a contact portion which can come into contact with the stepped portion is formed in an outer periphery, which is inserted into the casing, and whose distal end portion protrudes from a distal end of the casing pipe; an engagement convex portion that is disposed on the outer periphery of the distal end portion of the inner bit so as to be retractable; a ring bit that forms an annular shape and is arranged around the distal end portion of the inner bit; and an engagement concave portion that is formed in an inner peripheral portion of the ring bit. | 10-22-2015 |
20150292078 | SURFACE-COATED CUTTING TOOL - A surface-coated cutting tool includes a hard coating layer vapor-deposited on a surface of a tool body, in which a composition of the hard coating layer is expressed by a composition formula of (Al | 10-15-2015 |
20150289385 | MANUFACTURING METHOD OF POWER-MODULE SUBSTRATE - A manufacturing method of power-module substrate ( | 10-08-2015 |
20150282379 | HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE, HEAT-SINK-ATTACHED POWER MODULE, AND METHOD FOR PRODUCING HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE - A heat-sink-attached-power module substrate ( | 10-01-2015 |
20150274590 | CEMENT PRODUCTION APPARATUS - Providing a cement production apparatus in which raw material is supplied into a duct with being dispersed uniformly so that heat-exchanging efficiency is improved by even preheating and clogging and the like are prevented, so that stable operation can be carried out. | 10-01-2015 |
20150259803 | DISPERSION OF METAL NANOPARTICLES, METHOD FOR PRODUCING THE SAME, AND METHOD FOR SYNTHESIZING METAL NANOPARTICLES - The present invention aims to provide a method for producing a dispersion of metal nanoparticles which enables to control the shape and the particle diameter over a wide range, a dispersion of metal nanoparticles having superior dispersion stability, and a method for producing the same. In addition, the present invention further aims to provide a dispersion of metal nanoparticles which has a volume resistivity of 2×10 | 09-17-2015 |
20150251382 | BONDING STRUCTURE OF ALUMINUM MEMBER AND COPPER MEMBER - A bonding structure of an aluminum member and a copper member includes: the aluminum member composed of aluminum or an aluminum alloy, and the copper member composed of copper or a copper alloy in which the aluminum member and the copper member are bonded together by solid phase diffusion bonding; an intermetallic compound layer that is made of copper and aluminum and is formed in a bonding interface between the aluminum member and the copper member; and an oxide dispersed in an interface between the copper member and the intermetallic compound layer in a layered form along the interface. | 09-10-2015 |
20150246849 | CEMENT CLINKER PRODUCTION SYSTEM - The cement clinker production system includes: a first supplying section configured to supply a sulfur source and a fluorine source of mineralizer; a second supplying device configured to supply clinker raw material; a crusher configured to crush the mixed raw material obtained by mixing the clinker raw material with the fluorine source of the mineralizer; a kiln configured to burn the crushed mixed raw material; an introducing section configured to introduce the sulfur source of the mineralizer to the kiln; a third supplying section configured to supply fuel to the kiln; and a test sample-analyzing system configured to collect each of the mixed raw material before the burning and the clinker after the burning and to measure amounts of the fluorine, main components and free lime depending on the type collected. | 09-03-2015 |
20150217378 | SURFACE COATED CUTTING TOOL - A coated tool with a hard coating layer, which has an excellent hardness and heat insulating effect; and exhibits an excellent chipping resistance and an excellent fracturing resistance for a long-term usage, is provided. The hard coating layer included in the coated tool has a chemically vapor deposited alternate laminated structure, which is made of: a region A layer and a region B layer, each of which is expressed by the composition formula of (Ti | 08-06-2015 |
20150213921 | COPPER WIRE ROD AND MAGNET WIRE - A copper wire rod with an excellent surface quality and a magnet wire, in which the occurrence of blister defects is suppressed, are provided. The copper wire rod has a composition consisting of: more than 10 ppm by mass and 30 ppm by mass or less of P; 10 ppm by mass or less of O; 1 ppm by mass or less of H; and the balance Cu and inevitable impurities, wherein hydrogen concentration after performing a heat treatment at 500° for 30 minutes in vacuum is 0.2 ppm by mass or less. The magnet wire includes: a drawn wire material produced by using the copper wire rod; and an insulating film coating an outer periphery of the drawn wire material. | 07-30-2015 |
20150211108 | SPUTTERING TARGET AND PRODUCING METHOD THEREOF - The sputtering target has a component composition containing Ga: 2 to 30 at %, In: 15 to 45 at %, Na: 0.05 to 15 at % as metal components other than F, S and Se in the sputtering target and the remainder composed of Cu and inevitable impurities. The sputtering target has a composition in which a Na compound phase is dispersed, the Na is contained in the Na compound phase, a theoretical density ratio of the sintered body is 90% or more, a deflective strength is 60 N/mm | 07-30-2015 |
20150187452 | COPPER ALLOY WIRE AND COPPER ALLOY WIRE MANUFACTURING METHOD - This copper alloy wire consists of a precipitation strengthening type copper alloy containing Co, P, and Sn, wherein an average grain size of precipitates observed through cross-sectional structure observation immediately after performing an intermediate aging heat treatment is equal to or less than 15 nm and a number of precipitates having grain sizes of equal to or less than 5 nm is 10% or higher of a total number of observed precipitates, and the copper alloy wire is subjected to cold working and a final aging heat treatment after the intermediate aging heat treatment. | 07-02-2015 |
20150183685 | METHODS AND SYSTEMS FOR RECOVERY OF CO2 GAS IN CEMENT-MANUFACTURING FACILITIES, AND PROCESSES FOR MANUFACTURING CEMENT - An object of the present invention is to separate CO | 07-02-2015 |
20150158094 | SURFACE-COATED CUTTING TOOL HAVING THEREIN HARD COATING LAYER CAPABLE OF EXHIBITING EXCELLENT CHIPPING RESISTANCE DURING HIGH-SPEED INTERMITTENT CUTTING WORK - A surface-coated cutting tool includes a body and a hard coating layer coating the cutting tool body. In the surface-coated cutting tool, the (Ti | 06-11-2015 |
20150136281 | COPPER ALLOY WIRE AND COPPER ALLOY WIRE MANUFACTURING METHOD - A copper alloy wire of the present invention consists of a precipitation strengthening type copper alloy containing Co, P, and Sn, wherein an average grain size of precipitates observed through cross-sectional structure observation immediately after performing an aging heat treatment is equal to or greater than 15 nm and a number of precipitates having grain sizes of equal to or greater than 5 nm is 80% or higher of a total number of observed precipitates, and the copper alloy wire is subjected to cold working after the aging heat treatment. | 05-21-2015 |
20150132076 | CUTTING TOOL MADE OF CUBIC BORON NITRIDE-BASED SINTERED MATERIAL - A cBN tool that exhibits: excellent chipping resistance and wear resistance; and excellent cutting performance, for a long term use even in intermittent cutting work on high hardened steel is provided. The cutting tool includes a cutting tool body that is a cubic boron nitride-based material containing cubic boron nitride particles as a hard phase component. In the cutting tool, the cubic boron nitride particles includes an Al | 05-14-2015 |
20150128731 | SAMPLING METHOD AND SAMPLING DEVICE OF RECYCLED RAW MATERIAL, ANALYSIS SAMPLE OF RECYCLED RAW MATERIAL, AND EVALUATION METHOD OF RECYCLED RAW MATERIAL - Provided is a sampling method of recycled raw material, the method including: a process (S | 05-14-2015 |
20150118555 | ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY USING SAID ELECTRODE - An electrode of a lithium-ion secondary battery includes: an electrode film that contains a conductive auxiliary agent, a binder and an active material; and an electrode foil, on a surface of which the electrode film is formed. The conductive auxiliary agent is carbon nano-fibers and the carbon nano-fibers are contained in the range of 0.1 to 3.0% by mass relative to 100% by mass of the electrode film. Further, when using an organic solvent as a solvent, 1.0 to 8.0% by mass of the binder excluding the organic solvent is contained. The active material is made of a mixed powder of a coarse particle powder having an average particle size of 1 to 20 μm and a fine particle powder having an average particle size of ⅓ to 1/10 of an average particle size of the coarse particle powder, and the porosity of the electrode film is 10 to 30%. | 04-30-2015 |
20150118515 | TIN-PLATED COPPER-ALLOY TERMINAL MATERIAL - Tin-plated copper-alloy terminal material including a base material made of Cu alloy; a Sn-based surface layer formed on a surface of the base material and having an average thickness of 0.2 μm or larger and 0.6 μm or smaller; a Cu—Sn alloy layer generated between the Sn-based surface layer and the base material; and a Ni-based coating layer, formed of Ni or Ni—Sn alloy having a coating thickness of 0.005 μm or larger and 0.05 μm or smaller, in which an oil-sump depth Rvk of the Cu—Sn alloy layer measured when the Cu—Sn alloy layer is appeared on a surface by fusing and removing the Sn-based surface layer is 0.2 μm or larger; a part of the Cu—Sn alloy layer is exposed from the Sn-based surface layer; the Ni-based coating layer is formed on the exposed Cu—Sn alloy layer; and dynamic friction coefficient of the surface is 0.3 or less. | 04-30-2015 |
20150104637 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane. | 04-16-2015 |
20150090943 | ANTIMONY-DOPED TIN OXIDE POWDER AND METHOD OF PRODUCING THE SAME - This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn | 04-02-2015 |
20150060269 | COPPER ALLOY SPUTTERING TARGET - A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase ( | 03-05-2015 |
20150056027 | BALL END MILL - A ball end mill, which includes long and short cutting edges alternately formed, shows excellent chip discharge performance without sacrificing strength. An even number of cutting edges are formed at intervals in a circumferential direction on a front end of an end mill body rotated about an axis and have rotation trajectories formed around the axis that form a hemispherical shape. The cutting edges adjacent to each other in the circumferential direction with one cutting edge interposed are long cutting edges that intersect with each other on the axis. The other cutting edges adjacent to each other in the circumferential direction with one cutting edge interposed are short cutting edges that include inner peripheral ends at positions distant from the axis. A gash of the long cutting edge and a gash of the short cutting edge connect with each other on a front end side of the end mill body. | 02-26-2015 |
20150055302 | POWER MODULE SUBSTRATE WITH HEATSINK, POWER MODULE SUBSTRATE WITH COOLER AND POWER MODULE - A power module substrate with a heatsink includes: a power module substrate provided with a ceramic substrate, a circuit layer and a metal layer; and a heatsink bonded to the metal layer via a solder layer and composed of copper or a copper alloy. The metal layer is formed by bonding an aluminum plate in which the content of Al is 99.0 to 99.85% by mass to the ceramic substrate, and the solder layer is formed of a solid-solubilized-hardening type solder material including Sn as a major component and a solid-solubilized element being solid-solubilized into a matrix of Sn. | 02-26-2015 |
20150053236 | RINSING APPARATUS AND RINSING METHOD FOR POLYCRYSTALLINE SILICON LUMP - A rinsing apparatus for polycrystalline silicon lump which is obtained by cutting or breaking a rod of polycrystalline silicon, including: a wash basket having a plurality of through holes, which carries the polycrystalline silicon lump; a wash tank in which the wash basket is provided therein, in which rinse water is continuously supplied from a water supply port which is arranged at a bottom part of the wash tank; an inner cage having a plurality of openings which is smaller than the through holes of the wash basket at a bottom part thereof, provided in the wash tank, in which the wash basket is stored therein; and a swing device holding and swinging the wash basket in the inner cage, and: an overflow part which recovers the rinse water overflowed from an upper portion of the wash tank is provided at the wash tank. | 02-26-2015 |
20150049572 | CEMENT PRODUCTION APPARATUS - To provide a cement production apparatus which can pre-heat uniformly material supplied to cyclones above a duct, improve heat-exchanging efficiency, and perform an operation with low pressure loss and small energy consuption. | 02-19-2015 |
20150043980 | BALL END MILL - A ball end mill comprises a gash provided at a front end portion of a main end mill body rotated about an axis; and at least one cutting edge which has a rotational trajectory around the axis that forms a convex hemispherical shape having a center on the axis. The cutting edge is formed at a peripheral edge portion of a wall surface of the gash. A difference between a first and second included angles is within ±7°, where the first included angle is formed between the axis and a straight line connecting the center with a cutting edge position at which a depth of the gash is maximal in a cross-section orthogonal to the cutting edge, and the second included angle is formed between the axis and a straight line connecting the center with a cutting edge position at which a rake angle of the cutting edge is maximal. | 02-12-2015 |
20150037108 | REPLACEABLE HEAD CUTTING TOOL - A replaceable head cutting tool increases the strength of engagement between a tool body and a coupling member without causing damage. A cylindrical mounting unit of the coupling member which is made of a metal having hardness lower than the hardness of the tool body, is inserted into a mounting hole having a concave portion formed on the inner surface of the tool body. The mounting unit is plastically deformed so as to increase in diameter, and the outer peripheral surface of the mounting unit contacts the inner peripheral surface of the mounting hole and is engaged with the concave portion which includes a first wall surface that is inclined toward the outer peripheral side as it moves in an insertion direction of the mounting unit, and a second wall surface that is inclined toward the inner peripheral side as it moves in the insertion direction. | 02-05-2015 |
20150037105 | END MILL WITH COOLANT HOLES - An end mill comprises: a main body with two coolant holes; three chip discharge grooves formed at an outer periphery of a tip portion of the main body; gashes formed at the tip portions of the three chip discharge grooves; and three end cutting edges formed at intersecting ridgeline portions between tip flanks and wall surfaces facing an end mill rotation direction of the gashes. One end cutting edge is long and extends across the axis line at a tip of the main body. Inner peripheral ends of two remaining end cutting edges are disposed at intervals from the axis line. Two coolant holes are drilled toward a tip side in a direction of the axis line. A first coolant hole opens at the tip flank of the long edge, and a second coolant hole opens at a gash of one of the two remaining end cutting edges. | 02-05-2015 |
20150034489 | METHOD OF ELECTROPLATING WITH Sn-ALLOY AND APPARATUS OF ELECTROPLATING WITH Sn-ALLOY - To provide a method of electroplating with Sn-alloy in which a problem of deposition of metals on an anode when electroplating with Sn-alloy such as Sn—Ag based-alloy or the like is performed is solved and a soluble anode is enabled to be used. Dividing an inside of a plating tank into a cathode cell and an anode cell by an anion-exchange membrane; supplying plating solution including Sn ions to the cathode cell; supplying acid solution to the anode cell; electroplating by energizing an object to be plated in the cathode cell and an anode made of Sn in the anode cell; and using the acid solution including Sn ions liquated out form the anode made of Sn along with progress of plating as replenishing solution of Sn ions for plating solution in the cathode cell. | 02-05-2015 |
20150030401 | SURFACE COATING CUTTING TOOL - A surface-coated cutting tool with a body and hard coating layer is provided. (a) The hard coating layer is made of a complex nitride layer of Al and Cr. (b) The hard coating layer deposited on a region from a cutting edge to a location 100 μm from the cutting edge toward an opposite side thereof has a granular crystal structure. The average grain size of granular crystals on a surface of the hard coating layer on the region is 0.2-0.5 μm. The average grain size of granular crystals at an interface between the cutting tool body and the hard coating layer on the region is smaller than the average grain size on the surface the hard coating layer in an extent of 0.02-0.1 μm. The crystal grain size length ratio of crystal grains whose size is 0.15-20% or less. | 01-29-2015 |
20150020400 | CEMENT PRODUCTION APPARATUS - To provide a cement production apparatus in which heat-exchanging efficiency can be improved by even pre-heating by supplying material equally to cyclones above a duct and which can perform an operation with low pressure loss and small energy consumption. | 01-22-2015 |
20150010427 | Ni-BASE ALLOY - In a Ni-base alloy, an area-equivalent diameter D is calculated. D is defined by D=A | 01-08-2015 |
20140377024 | SURFACE-COATED CUTTING TOOL WITH HARD COATING LAYER EXHIBITING EXCELLENT CHIPPING RESISTANCE AND WEAR RESISTANCE - A surface-coated cutting tool with a hard coating layer exhibits excellent chipping resistance and wear resistance in a high-speed cutting process. The surface-coated cutting tool comprises a lower layer consisting of a titanium compound layer and an upper layer consisting of an aluminum oxide layer deposited on a surface of a tool substrate constituted of a tungsten carbide-based cemented carbide as a hard coating layer. In the upper layer, a (006) plane texture coefficient TC(006) is 1.8 or more, a ratio I(104)/I(110) of a peak intensity I(104) of an (104) plane to a peak intensity I(110) of an (110) plane is in a range of 0.5 to 2.0, and furthermore, an absolute value of a residual stress in the aluminum oxide layer is 100 MPa or less. | 12-25-2014 |
20140366499 | CHLORINE BYPASS DEVICE - The present invention provides a chlorine bypass device which can cool exhaust gas quickly by mixing extracted exhaust gas with cooling air at high efficiency, thereby produce fine chloride dust, and increase dust recovery efficiency. In the present invention, a cooling pipe | 12-18-2014 |
20140349139 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF - Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb | 11-27-2014 |
20140334890 | CUTTING INSERT AND INDEXABLE CUTTING TOOL - A cutting insert includes an insert body having a polygonal plate shape. Rake faces are formed on polygonal surfaces of the insert body, and flank faces are formed on lateral faces of the insert body arranged around the polygonal surfaces. Main cutting edges are formed on side ridges of the polygonal surfaces at intersecting ridgelines between the rake faces and the flank faces. Each main cutting edge extends between two corners adjacent to each other in a circumferential direction of the polygonal surface among corners of the polygonal surface. When seen from a direction opposing the rake face, one end portion of the main cutting edge that stretches to one corner of the two corners has a convexly curved shape, and the other end portion of the main cutting edge that stretches to the other corner of the two corners has a concavely curved shape. | 11-13-2014 |
20140320954 | INFRARED RAY CUT-OFF MATERIAL, DISPERSION OF INFRARED RAY CUT-OFF MATERIAL, INFRARED RAY CUT-OFF FILM-FORMING COMPOSITION, AND INFRARED RAY CUT-OFF FILM - An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbO | 10-30-2014 |
20140315043 | SPUTTERING TARGET FOR FORMING PROTECTIVE FILM, AND LAMINATED WIRING FILM - A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film. | 10-23-2014 |
20140295197 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - In a PZT-based ferroelectric thin film-forming composition, a ratio of a PZT precursor to 100 wt % of the composition is 17 to 35 wt % in terms of oxides, a ratio of a diol to 100 wt % of the composition is 16 to 56 wt %, a ratio of a polyvinyl pyrrolidone or a polyethylene glycol to 1 mol of the PZT precursor is 0.01 to 0.25 mol in terms of monomers, a ratio of the water to 1 mol of the PZT precursor is 0.5 to 3 mol, and the composition does not further contain a linear monoalcohol having 6 to 12 carbon chains which has a ratio of 0.6 to 10 wt % with respect to 100 wt % of the composition. | 10-02-2014 |
20140295172 | METHOD OF FORMING PNbZT FERROELECTRIC THIN FILM - A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode | 10-02-2014 |
20140294720 | LiCoO2 FILM-FORMING PRECURSOR SOLUTION AND METHOD OF FORMING LiCoO2 FILM USING THE SAME | 10-02-2014 |
20140294528 | REPLACEABLE CUTTING HEAD - A replaceable cutting head stably rotates a head body using a work tool during attachment. An outer periphery of the head body is provided with a plurality of chip discharge grooves extending along a direction of an axis, cutting blades extending along the chip discharge grooves, and a pair of latching faces that are formed by cutting the outer periphery of the head body and are arranged back to back with the axis interposed therebetween at a base end portion along the axial direction. A first chip discharge groove, and a second chip discharge groove having a narrower width along a circumferential direction around the axis than the first chip discharge groove at at least the base end portion along the direction of the axis are included in the chip discharge grooves. At least one latching face is connected to a base end portion of the second chip discharge groove. | 10-02-2014 |
20140294521 | BROACH - A plurality of cutting edges that are arranged on an outer circumference of a shaft-shaped broach body are provided with a spline teeth group, which contains a plurality of spline teeth 8 that groove a prepared hole of a work material, and a round teeth group, which is disposed in a different position from the spline teeth group along an axis direction and contains a plurality of round teeth that machine an inner circumference of the prepared hole. At least one gullet is formed to extend along the outer circumference of the broach body in a circumferential direction around the axis between the round teeth that are adjacent to one another in the axis direction in the round teeth group. The gullet extends toward the axis direction, gradually twisting toward the circumferential direction. The spline teeth group and the round teeth group are formed integrally on the outer circumference of the broach body. | 10-02-2014 |
20140293505 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME - A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film. | 10-02-2014 |
20140291680 | SILICON MEMBER AND METHOD OF PRODUCING THE SAME - A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member | 10-02-2014 |
20140290805 | COPPER ALLOY AND COPPER ALLOY FORMING MATERIAL - Copper alloys according to first to third aspects contain Mg at a content of 3.3% by atom to 6.9% by atom, with the balance substantially being Cu and unavoidable impurities, wherein an oxygen content is in a range of 500 ppm by atom or less, and either one or both of the following conditions (a) and (b) are satisfied: (a) when a Mg content is set to X % by atom, an electrical conductivity σ (% IACS) satisfies the following Expression (1), σ≦{1.7241/(−0.0347×X | 10-02-2014 |
20140288233 | METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME - A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days. | 09-25-2014 |
20140288219 | FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION - This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %. | 09-25-2014 |
20140287262 | TIN-PLATED COPPER-ALLOY MATERIAL FOR TERMINAL HAVING EXCELLENT INSERTION/EXTRACTION PERFORMANCE - Tin-plated copper-alloy terminal material in which Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer contains Cu | 09-25-2014 |
20140287251 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - This PZT-based ferroelectric thin film-forming composition comprises: a PZT precursor; a diol; one of polyvinyl pyrrolidones and a polyethylene glycol; water, and a linear monoalcohol having 6 to 12 carbon chains. In this composition, a concentration of the PZT precursor in 100 wt % of the composition is 17 wt % to 35 wt % in terms of oxides, the ratio of the diol to 100 wt % of the composition is 16 wt % to 56 wt %, the ratio of the one of the polyvinyl pyrrolidones and the polyethylene glycol to 1 mol of the PZT precursor is 0.01 mol to 0.25 mol, the ratio of the water to 1 mol of the PZT precursor is 0.5 mol to 3 mol, and the ratio of the linear monoalcohol to 100 wt % of the composition is 0.6 wt % to 10 wt %. | 09-25-2014 |
20140287210 | SURFACE-COATED CUTTING TOOL - A surface-coated cutting tool with a hard coating layer exhibiting an excellent flaking and chipping resistance in a high-speed heavy and intermittent cutting is provided. The vapor-deposited hard coating layer has a lower layer (Ti compound layer) and an upper layer (α-type Al | 09-25-2014 |
20140287136 | LaNiO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LaNiO3 THIN FILM USING THE SAME | 09-25-2014 |
20140284515 | FERRITE THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING FERRITE THIN FILM - This ferrite thin film-forming composition is a composition for forming a thin film of NiZn ferrite, CuZn ferrite, or NiCuZn ferrite using a sol-gel method, and the composition includes: metal raw materials; and a solvent containing N-methyl pyrrolidone, wherein a ratio of an amount of N-methyl pyrrolidone to 100 mass % of the total amount of the composition is in a range of 30 to 60 mass %. | 09-25-2014 |
20140283962 | COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD OF MANUFACTURING COPPER ALLOY FOR ELECTRONIC DEVICES, COPPER ALLOY PLASTIC WORKING MATERIAL FOR ELECTRONIC DEVICES, AND COMPONENT FOR ELECTRONIC DEVICES - A copper alloy for electronic devices has a low Young's modulus, high proof stress, high electrical conductivity and excellent bending formability and is appropriate for a component for electronic devices including a terminal, a connector, a relay and a lead frame. Also a method of manufacturing a copper alloy utilizes a copper alloy plastic working material for electronic devices, and a component for electronic devices. The copper alloy includes Mg at 3.3 to 6.9 at %, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is X at %, an electrical conductivity σ (% IACS) is in a range of σ≦{1.7241/(−0.0347×X | 09-25-2014 |
20140271339 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, σ≦{1.7241/(−0.0347×A | 09-18-2014 |
20140270933 | MECHANICAL SEED COUPLING - The present invention relates to an apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts. | 09-18-2014 |
20140261160 | FZ SEED HOLDER AND PRE-HEATER - The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips. | 09-18-2014 |
20140255641 | SILICON MEMBER FOR SEMICONDUCTOR APPARATUS AND METHOD OF PRODUCING THE SAME - A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible. | 09-11-2014 |
20140251801 | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot. | 09-11-2014 |
20140234035 | HOLDER FOR HEAD REPLACEMENT-TYPE CUTTING TOOL AND HEAD REPLACEMENT-TYPE CUTTING TOOL - The holder for a head replacement-type cutting tool is provided with a holder main body and a tubular coupling member | 08-21-2014 |
20140212576 | DIELECTRIC THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING DIELECTRIC THIN FILM USING THE SAME - In a thin film capacitor or the like, a dielectric thin film-forming composition capable of improving leakage current characteristics; and a method of forming a dielectric thin film using this composition are provided. Regarding a dielectric thin film-forming composition for forming a dielectric thin film, the dielectric thin film is formed of a barium strontium titanate (BST)-based complex perovskite film, and the composition is doped with aluminum (Al). In addition, a doping amount of the aluminum (Al) is in a range of 0.1 at % to 15 at % with respect to 100 at % of perovskite A site atoms contained in the composition. | 07-31-2014 |
20140212228 | CUTTING INSERT AND INDEXABLE INSERT-TYPE CUTTING TOOL - A cutting insert and an indexable insert-type cutting tool includes a cutting edge ( | 07-31-2014 |
20140205389 | EXCHANGEABLE HEAD CUTTING TOOL - An exchangeable head cutting tool contains a tool main body made of a hard material and a connecting member made of a metal material having a lower hardness than the hard material. The tool main body and the connecting member are joined by inserting a cylindrical mounting portion of the connecting member into a mounting hole formed in the tool main body, and by plastically deforming the mounting portion so as to expand a diameter thereof, thereby bringing an outer peripheral surface of the mounting portion into close contact with the inner peripheral surface of the mounting hole and thus making the outer peripheral surface of the mounting portion engage with a concave portions of the tool main body. A diameter expanding member having a higher hardness than the connecting member is press-fitted into and fixed to an inner peripheral portion of the mounting portion. | 07-24-2014 |
20140199127 | CUTTING INSERT FOR FACE MILLING CUTTER AND INDEXABLE FACE MILLING CUTTER - The cutting insert for a face milling cutter is provided with an insert main body which is formed in a polygonal plate shape and in a shape of inversion symmetry on the front and back faces, a pair of polygonal faces facing in a thickness direction of the insert main body, side faces facing in a direction intersecting with the thickness direction, and cutting edges formed along a ridge line between the polygonal face and the side face. The polygonal face is in a substantially regular polygonal shape. The cutting edge has a major cutting edge, a minor cutting edge, and a connecting edge. The side face has a first flank face arranged adjacent to the cutting edge and gradually inclines outward in the insert radial direction. The first flank face is arranged so as to be adjacent at least to the major cutting edge. | 07-17-2014 |
20140192486 | POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities. | 07-10-2014 |
20140191164 | CARBON NANOFIBER, DISPERSION LIQUID AND COMPOSITION THEREOF - The carbon nanofiber has a content of oxygen controlled in a range of 8% by mass to 20% by mass and excellent dispersibility in polar solvents by means of an oxidization treatment carried out on a raw material of the carbon nanofiber. The above-described oxidization treatment is preferably carried out at 100° C. or higher using an mixed acid of nitric acid and sulfuric acid in which the nitric acid concentration is in a range of 10% by mass to 30% by mass. A carbon nanofiber dispersion liquid is obtained by dispersing the above-described carbon nanofiber in a polar solvent, and a carbon nanofiber composition contains the above-described dispersion liquid and a binder component. | 07-10-2014 |
20140187409 | SILICON PART FOR PLASMA ETCHING APPARATUS AND METHOD OF PRODUCING THE SAME - The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×10 | 07-03-2014 |
20140174611 | COPPER ALLOY SHEET, AND METHOD OF PRODUCING COPPER ALLOY SHEET - One aspect of this method of producing a copper alloy sheet includes: a hot rolling process; a cold rolling process; a recrystallization heat treatment process; and a finish cold rolling process in this order, wherein a hot rolling initiation temperature is 800° C. to 940° C., a cooling rate from a temperature after final rolling or 650° C. to 350° C. is 1° C./second or more, and a cold working rate is 55% or more. In the recrystallization heat treatment process, 550≦Tmax≦790, 0.04≦tm≦2, and 460≦{Tmax−40×tm | 06-26-2014 |
20140174605 | SOLDER POWDER, AND SOLDER PASTE USING SOLDER POWDER - In solder powder having an average particle size of 5 μm or less and constituted by a center core and a covering layer covering the center core, wherein the center core consists of an intermetallic compound of silver and tin, or silver and the intermetallic compound of silver and tin, the covering layer consists of tin, and an intermediate layer which consists of an intermetallic compound of copper and tin is interposed between the center core and the covering layer so that at least a part of the center core is covered thereby. | 06-26-2014 |
20140170436 | TIN-PLATED COPPER-ALLOY MATERIAL FOR TERMINAL HAVING EXCELLENT INSERTION/EXTRACTION PERFORMANCE - Tin-plated copper-alloy material for terminal in which: a Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer is an alloy layer containing Cu | 06-19-2014 |
20140166164 | COPPER ALLOY SHEET AND METHOD OF MANUFACTURING COPPER ALLOY SHEET - A copper alloy sheet according to one aspect contains 28.0 mass % to 35.0 mass % of Zn, 0.15 mass % to 0.75 mass % of Sn, 0.005 mass % to 0.05 mass % of P, and a balance consisting of Cu and unavoidable impurities, in which relationships of 44≧[Zn]+20×[Sn]≧37 and 32≦[Zn]+9×([Sn]−0.25) | 06-19-2014 |
20140157851 | METHOD OF MANUFACTURING ANNULAR MOLDING - A method of manufacturing an annular material includes: a forging process of making a discoid forged material by forging an alloy material; and a ring rolling process of making an annular material by performing ring rolling on an annular intermediate made by forming a through-hole in the forged material. In the forging process, hot forging which achieves an absolute value εθ1 of a strain in a circumferential direction of the forged material that is greater than or equal to 0.3, an absolute value εh of a strain in a height direction of the forged material that is greater than or equal to 0.3, and a ratio εh/εθ1 between the absolute values of the strains that is in a range of 0.4 to 2.5 is performed at least two or more times. | 06-12-2014 |
20140141531 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - It is possible to produce a ferroelectric thin film controlled to have the preferential crystal orientation in the (100) plane with a simple process without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on a lower electrode by irradiating a surface of the lower electrode of a substrate having the lower electrode where the crystal plane is oriented in a (111) axis direction, with an atmospheric pressure plasma, coating a composition for forming a ferroelectric thin film on the lower electrode, and heating and crystallizing the coated composition. | 05-22-2014 |
20140130717 | METHOD AND FACILITY FOR RECOVERING CO2 GAS IN CEMENT MANUFACTURING FACILITY - To provide a method and facility for enabling CO | 05-15-2014 |
20140127109 | TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION AND METHOD FOR MANUFACTURING SAID POWDER - An object and a problem of the present invention is to provide tin (II) oxide powder which has extremely high solubility in an acid or an acidic plating solution and excellent in storage stability in the air. The tin (II) oxide powder of the present invention is for replenishing a tin component of a tin-alloy plating solution, and comprises 100 to 5000 ppm of an antioxidant being contained in the powder with a mass ratio, and has such a dissolution rate that when 0.1 g of the tin (II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic acid solution at a temperature of 25° C. and stirred, then the powder dissolves therein within 180 seconds. | 05-08-2014 |
20140124106 | SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY - Provided are a silver-white copper alloy which has superior mechanical properties such as hot workability, cold workability, or press property, color fastness, bactericidal and antibacterial properties, and Ni allergy resistance; and a method of producing such a silver-white copper alloy. The silver-white copper alloy includes 51.0 mass % to 58.0 mass % of Cu; 9.0 mass % to 12.5 mass % of Ni; 0.0003 mass % to 0.010 mass % of C; 0.0005 mass % to 0.030 mass % of Pb; and the balance of Zn and inevitable impurities, in which a relationship of 65.5≦[Cu]+1.2×[Ni]≦70.0 is satisfied between a content of Cu [Cu] (mass %) and a content of Ni [Ni] (mass %). In a metal structure thereof, an area ratio of β phases dispersed in an α-phase matrix is 0% to 0.9%. | 05-08-2014 |
20140120486 | CEMENT PLANT - There is provided a cement plant including a chlorine bypass apparatus capable of efficiently reducing the chlorine concentration in a cement kiln due to exhaust gas extraction by a small amount, by preventing calciner exhaust gas low in chlorine concentration from contamination and extracting a part of kiln exhaust gas high in chlorine concentration. In the invention, a baffle wall | 05-01-2014 |
20140112822 | SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY - Provided are a silver-white copper alloy which has superior mechanical properties such as hot workability, cold workability, or press property, color fastness, bactericidal and antibacterial properties, and Ni allergy resistance; and a method of producing such a silver-white copper alloy. The silver-white copper alloy includes 51.0 mass % to 58.0 mass % of Cu; 9.0 mass % to 12.5 mass % of Ni; 0.0003 mass % to 0.010 mass % of C; 0.0005 mass % to 0.030 mass % of Pb; and the balance of Zn and inevitable impurities, in which a relationship of 65.5≦[Cu]+1.2×[Ni]≦70.0 is satisfied between a content of Cu [Cu] (mass %) and a content of Ni [Ni] (mass %). In a metal structure thereof, an area ratio of β phases dispersed in an α-phase matrix is 0% to 0.9%. | 04-24-2014 |
20140103271 | HEAT RAY SHIELDING COMPOSITION - To provide a heat ray shielding composition having a high transmittance of visible light rays and a high cut rate of near-infrared rays. The heat ray shielding composition of the invention is constituted by mixing one or two or more near-infrared ray-absorbing pigments selected from a group consisting of diimonium-based pigments, phthalocyanine-based pigments and dithiol metal complex pigments in a dispersion liquid formed by dispersing ITO powder in a range of 0.1 mass % to 50 mass % in a range of 0.01 mass to 0.5 mass % with respect to 100 mass % of the dispersion liquid. The ITO powder is used in manufacturing an ITO film which has a band gap in a range of 4.0 eV to 4.5 eV. | 04-17-2014 |
20140096877 | COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICES, COPPER ALLOY PLASTIC WORKING MATERIAL FOR ELECTRONIC DEVICES, AND COMPONENT FOR ELECTRONIC DEVICES - An aspect of this copper alloy contains: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, wherein when the content of Mg is represented by A at %, a conductivity σ (% IACS) satisfies the following Expression (1), | 04-10-2014 |
20140090699 | TRANSPARENT ELECTROCONDUCTIVE FILM FOR SOLAR CELL, COMPOSITION FOR TRANSPARENT ELECTROCONDUCTIVE FILM AND MULTI-JUNCTION SOLAR CELL - An object of the present invention is to provide a transparent electroconductive film, which in addition to satisfying each of the requirements of favorable phototransmittance, high electrical conductivity, low refractive index and the like required when using in a multi-junction solar cell, enables running costs to be reduced since the transparent electroconductive film is produced without using a vacuum deposition method. The transparent electroconductive film for a solar cell of the present invention is provided between photoelectric conversion layers of a multi-junction solar cell, a coated film of fine particles formed by coating using a wet coating method is baked, the electroconductive component in the base material that composes the electroconductive film is present within the range of 5 to 95% by weight, and the thickness of the electroconductive film is within the range of 5 to 200 nm. | 04-03-2014 |
20140087606 | COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, COPPER ALLOY THIN PLATE FOR ELECTRONIC/ELECTRIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRONIC/ELECTRIC DEVICE AND TERMINAL - What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002≦Fe/Ni<1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P satisfies 3<(Ni+Fe)/P<15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe) satisfies 0.303-27-2014 | |
20140079618 | METHOD FOR MANUFACTURING TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION, AND TIN (II) OXIDE POWDER MANUFACTURED USING SAID METHOD - An object of the present invention is to provide tin(II) oxide powder which has extremely high solubility in an acid or an acidic plating solution, excellent in storage stability in the air and can heighten oxidation-preventive effect of Sn | 03-20-2014 |
20140078684 | POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate. | 03-20-2014 |
20140072819 | COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING THIN FILM AND THIN FILM FORMED USING THE SAME METHOD - Cracking does not occur in a ferroelectric thin film even when Ce is not doped in a composition for forming ferroelectric thin films and a composition for forming relatively thick ferroelectric thin films contains lead acetate instead of lead nitrate. A ferroelectric thin film made of a titanate lead-based perovskite film or a titanate zirconate lead-based complex perovskite film is formed using the composition for forming ferroelectric thin films. The composition includes lead acetate, a stabilizing agent made of lactic acid and polyvinyl pyrrolidone. In addition, a monomer-equivalent molar ratio of polyvinyl pyrrolidone to a perovskite A site atom included in the composition is more than 0 to less than 0.015. Furthermore, a weight average molecular weight of the polyvinyl pyrrolidone is 5000 to 100000. | 03-13-2014 |
20140071633 | POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate. | 03-13-2014 |
20140065423 | SYNTHETIC AMORPHOUS SILICA POWDER AND METHOD FOR PRODUCING SAME - The synthetic amorphous silica powder of the present invention is obtained by applying a spheroidizing treatment to a granulated silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D | 03-06-2014 |
20140061468 | INFRARED SENSOR - Provided is a lightweight infrared sensor which is readily and stably erected to a substrate. The infrared sensor includes an insulating film; a first and a second heat sensitive element are disposed on one surface of the insulating film separately; a first and second conductive film on one surface of the insulating film and are respectively connected to the first and the second heat sensitive element; and an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element. The infrared sensor further includes a reinforcing plate on which a sensor part window corresponding to a sensor part is formed and which is adhered to the insulating film; and a first and a second terminal electrode are respectively connected to the first and the second wiring film, are formed on the edge of the insulating film. | 03-06-2014 |
20140048414 | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy. | 02-20-2014 |
20140037529 | METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE SALT, METHOD FOR PRODUCING FLUOROSULFATE, AND METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE ONIUM SALT - According to the method for producing bis(fluorosulfonyl)imide salt of the present invention, the method for producing fluorosulfate, and the method for producing bis(fluorosulfonyl)imide onium salt, first, an aqueous solution is prepared by dissolving a mixed liquid containing bis(fluorosulfonyl)imide and fluorosulfonic acid in water. Then, the aqueous solution is neutralized with an alkaline compound, producing bis(fluorosulfonyl)imide salt and fluorosulfate. In the methods, bis(fluorosulfonyl)imide salt, fluorosulfate, and bis(fluorosulfonyl)imide onium salt can be obtained safely and easily. | 02-06-2014 |
20140034491 | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm. | 02-06-2014 |
20140023448 | DRILL - A drill comprises a drill body that is rotatable on an axis. Chip evacuating flutes, which are open on front flanks of the drill body and are extended rearwards, are formed in a periphery of the drill body on its front side. Cutting edges are formed along ridge lines where the front flanks intersect with wall surfaces of the chip evacuating flutes facing a drill rotating direction. At least first and second front flanks are formed on the front flanks in order of their locations in the drill rotating direction from its leading side to its trailing side. A clearance angle of the second front flank is greater than that of the first front flank. Intersection lines of the first and second front flanks cross the cutting edges. | 01-23-2014 |
20140015721 | ANTENNA APPARATUS - Provided is an antenna device which is capable of flexibly adjusting multiple resonance frequencies. The antenna device is provided with a substrate main body ( | 01-16-2014 |
20140015140 | POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %. | 01-16-2014 |
20140013914 | SURFACE-COATED CUTTING TOOL - A surface-coated cutting tool having excellent fracture resistance and wear resistance is provided. In the surface-coated cutting tool having at least a hard coating layer made of an (Al, Cr)N layer with a layer thickness of 0.5 μm to 10 μm formed to coat on the surface of a cutting tool body made of a WC cemented carbide, pores and droplets are dispersed and distributed in the (Al, Cr)N layer, the occupied area ratio of the pores and the occupied area ratio of the droplets in a cross-section of the (Al, Cr)N layer are 0.5 to 1 area % and 2 to 4 area % respectively, and, furthermore, out of the droplets, Al-rich droplets having a higher Al content ratio than the average Al content ratio of the (Al, Cr)N layer occupy 20 area % or more of the total droplet area. | 01-16-2014 |
20140010262 | INFRARED SENSOR - Provided is a lightweight infrared sensor that detects a temperature at a portion spaced apart from a circuit substrate with high accuracy, and is installed on the circuit substrate easily and stably. The infrared sensor includes an insulating film; a first and a second heat sensitive elements are disposed on one surface of the insulating film separately; a first conductive film on the insulating film that is connected to the first heat sensitive element; a second conductive film connected to the second heat sensitive element; an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element; a plurality of terminal electrodes formed on one end of the insulating film and fitted into an external connector; an edge reinforcing plate adhered to one end of one surface of the insulating film; and a mounting hole that is formed on the other end. | 01-09-2014 |
20140010038 | CONTINUOUS KNEADING DEVICE - A continuous kneading device is provided with an upper trunk ( | 01-09-2014 |
20140000318 | METHOD OF GENERATING CRACKS IN POLYCRYSTALLINE SILICON ROD AND CRACK GENERATING APPARATUS | 01-02-2014 |
20130335921 | SUBSTRATE FOR POWER MODULE, SUBSTRATE WITH HEAT SINK FOR POWER MODULE, POWER MODULE, METHOD FOR PRODUCING SUBSTRATE FOR POWER MODULE, AND METHOD FOR PRODUCING SUBSTRATE WITH HEAT SINK FOR POWER MODULE - Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass. | 12-19-2013 |
20130330138 | CUTTING INSERT - A cutting insert is provided with an insert main body formed in the shape of a tetragonal plate, and the insert main body has a pair of tetragonal faces and four side faces. Four cutting edges are formed at ridge lines between the adjacent side faces, each of which is provided with a major cutting edge and a pair of minor cutting edges extending from both ends of the major cutting edge. Four tetragonal rake faces are formed on a pair of side faces, the three sides of each of which is formed by the major cutting edge and the pair of minor cutting edges. A major cutting edge continuing to a first rake face and a major cutting edge continuing to a second rake face extend in a different direction to each other so as to intersect in an X-letter shape. | 12-12-2013 |
20130298809 | METHOD FOR CONTROLLING NOX CONCENTRATION IN EXHAUST GAS IN COMBUSTION FACILITY USING PULVERIZED COAL - An object of the invention is to provide a method for controlling an NOx concentration in an exhaust gas in a combustion facility that uses a pulverized coal, which can easily control the NOx concentration in the exhaust gas to be discharged from a fuel facility that uses the pulverized coal as the fuel to or below a regulation value according to the Air Pollution Control Law and the like, and can also reduce an amount of a denitrifying agent or the like to be used, which is necessary for the control, by controlling the NOx concentration on the basis of the properties of the pulverized coal beforehand. The invention further includes: measuring a reaction velocity of each of chars corresponding to a plurality of types of pulverized coals beforehand; determining a relationship between the NOx concentration in the exhaust gas and the reaction velocity in advance; blending the plurality of the types of the pulverized coals so that the reaction velocity of the char becomes such a value as to correspond to a target NOx concentration or below, on the basis of the relationship; and supplying the blended pulverized coal to the combustion facility as the fuel of the combustion facility. | 11-14-2013 |
20130298730 | COMPOSITE SOFT MAGNETIC MATERIAL HAVING LOW MAGNETIC STRAIN AND HIGH MAGNETIC FLUX DENSITY, METHOD FOR PRODUCING SAME, AND ELECTROMAGNETIC CIRCUIT COMPONENT - A composite soft magnetic material having low magnetostriction and high magnetic flux density contains: pure iron-based composite soft magnetic powder particles that are subjected to an insulating treatment by a Mg-containing insulating film or a phosphate film; and Fe—Si alloy powder particles including 11%-16% by mass of Si. A ratio of an amount of the Fe—Si alloy powder particles to a total amount is in a range of 10%-60% by mass. A method for producing the composite soft magnetic material comprises the steps of: mixing a pure iron-based composite soft magnetic powder, and the Fe—Si alloy powder in such a manner that a ratio of the Fe—Si alloy powder to a total amount is in a range of 10%-60%; subjecting a resultant mixture to compression molding; and subjecting a resultant molded body to a baking treatment in a non-oxidizing atmosphere. | 11-14-2013 |
20130284327 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less. | 10-31-2013 |
20130283973 | CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, POWDER FOR CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, METHOD FOR MANUFACTURING CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, SINTERED SILVER ALLOY BODY, AND METHOD FOR MANUFACTURING SINTERED SILVER ALLOY BODY - A clayish composition for forming a sintered silver alloy body capable of forming a sintered silver alloy body, which is not easily discolored even in the atmosphere and has excellent tensile strength, flexural strength, surface hardness (hereinafter, sometimes collectively referred to as ‘mechanical strength’), elongation or the like, powder for the clayish composition for forming a sintered silver alloy body, a method for manufacturing the clayish composition for forming a sintered silver alloy body, a sintered silver alloy body and a method for manufacturing the sintered silver alloy body. | 10-31-2013 |
20130274886 | VERTEBRAL BODY SPACER - A vertebral body spacer of the present invention is used by being inserted between a vertebral body and a vertebral body (intervertebral space). The vertebral body spacer has a block body constituted of titanium or a titanium alloy as a main component thereof, and provided with a pair of contact surfaces to be made contact with the vertebral body and the vertebral body. The block body includes dense sheets having a dense part on at least a surface thereof and porous sheets having a porous part on at least a surface thereof. The porous part has a larger porosity than a porosity of the dense part. Each of the porous sheets is sandwiched between the pair of dense sheets. According to the present invention, it is possible to maintain an appropriate size between the vertebral bodies (intervertebral space). | 10-17-2013 |
20130274885 | VERTEBRAL BODY SPACER - A vertebral body spacer of the present invention is used by being inserted between a vertebral body and a vertebral body (intervertebral space). The vertebral body spacer has a block body constituted of titanium or a titanium alloy as a main component thereof, and provided with a pair of contact surfaces to be made contact with the vertebral body and the vertebral body. The block body includes a frame-shaped dense part and a porous part provided inside the dense part, and a porosity of at least a surface of the porous part is larger than a porosity of the dense part. According to the present invention, it is possible to maintain an appropriate size between the vertebral bodies (intervertebral space). | 10-17-2013 |
20130274884 | VERTEBRAL BODY SPACER - A vertebral body spacer of the present invention is used by being inserted between a vertebral body and a vertebral body (intervertebral space). The vertebral body spacer has a block body constituted of titanium or a titanium alloy as a main component thereof, and provided with a pair of contact surfaces to be made contact with the vertebral body and the vertebral body. The block body includes needle parts formed into a needle shape having both end portions and a porous part having through holes passing through the porous part in a thickness direction thereof, and a porosity of at least a surface of the porous part is larger than a porosity of each of the needle parts. The needle parts are inserted into the through holes so that the both end portions are projected from the contact surfaces. | 10-17-2013 |
20130260482 | METHOD OF MANUFACTURING FERROELECTRIC THIN FILM - A method of manufacturing a ferroelectric thin film on a lower electrode by electrostatically spraying a ferroelectric thin film-forming electrostatic spray solution so as to coat the electrostatic spray solution on the lower electrode and form a coated film, drying, calcining, and then firing the coated film so as to crystallize the coated film. In this method, the electrostatic spray solution is a mixed solution in which a ferroelectric thin film-forming sol-gel solution and powder having the same composition as the solid content of the sol-gel solution and having a particle diameter that can be ejected from the spout are uniformly mixed, and, when the metallic compound-converted mass of a metallic compound dissolved in the sol-gel solution is represented by A and the mass of the powder is represented by B, a ratio of B with respect to (A+B) is in a range of 5% to 40%. | 10-03-2013 |
20130260142 | METHOD OF MANUFACTURING PZT-BASED FERROELECTRIC THIN FILM - A PZT-based ferroelectric thin film is manufactured on a lower electrode by coating, calcining, and then firing so as to crystallize a PZT-based ferroelectric thin film-forming composition. A PZT-based ferroelectric thin film-forming composition is coated on the surface of the lower electrode using a CSD method. Calcination is slowly carried out on a formed sol film in a temperature pattern including a first holding step in which the temperature of the composition is increased from a predetermined temperature such as room temperature using infrared rays and the composition is held at a temperature in a range of 200° C. to 350° C. and a second holding step in which the temperature of composition is increased from the holding temperature of the first holding step and is held at a temperature in a range of 350° C. to 500° C. higher than the holding temperature of the first holding step. | 10-03-2013 |
20130260051 | METHOD OF MANUFACTURING FERROELECTRIC THIN FILM - A method of manufacturing a ferroelectric thin film on a lower electrode by electrostatically spraying a ferroelectric thin film-forming sol-gel solution from a spout of a capillary toward the lower electrode of a substrate having the lower electrode so as to coat the sol-gel solution on the lower electrode and form a coated film, drying, calcining, and then firing the coated film so as to crystallize the coated film, in which a distance between the spout of the capillary and the lower electrode and an applied voltage during electrostatic spray are set so that a refractive index during drying and calcination of the coated film becomes 2 or more, and a film thickness sets in a range of 150 nm or less when the sol-gel solution is coated in a single spray process, calcined, and then fired so as to be crystallized. | 10-03-2013 |
20130258549 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer. | 10-03-2013 |
20130257228 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (100) plane preferentially in a range of 45 nm to 150 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer. | 10-03-2013 |
20130256585 | METHOD OF FORMING FERRITE THIN FILM AND FERRITE THIN FILM OBTAINED USING THE SAME - A method of forming a ferrite thin film by carrying out a process for forming a coated film by coating a ferrite thin film-forming composition on a heat-resistant substrate and a process for calcining the coated film once or a plurality of times so that the thickness of the calcined film on the substrate becomes a desired thickness, and firing the calcined film formed on the substrate, in which the conditions for firing the calcined film formed on the substrate are under the atmosphere or an oxygen gas or inert gas atmosphere, a temperature-rise rate of 1° C./minute to 50° C./minute, a holding temperature of 500° C. to 800° C., and a holding time of 30 minutes to 120 minutes. | 10-03-2013 |
20130256582 | FERRITE THIN FILM-FORMING COMPOSITION MATERIAL, METHOD OF FORMING FERRITE THIN FILM, AND FERRITE THIN FILM FORMED USING THE SAME - To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material. | 10-03-2013 |
20130256580 | FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION - When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible. | 10-03-2013 |
20130252436 | DIELECTRIC THIN FILM, METHOD OF MANUFACTURING SAME, AND APPLICATIONS THEREOF - A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba | 09-26-2013 |
20130249742 | ANTENNA DEVICE - Provided is an antenna device that is capable of ensuring sufficient antenna performance by maximally utilizing a limited antenna occupied area. The antenna device is provided with a substrate main body ( | 09-26-2013 |
20130236391 | MANUFACTURING FACILITY FOR QUICKLIME, AND MANUFACTURING FACILITY AND MANUFACTURING PROCESS FOR SLAKED LIME - A manufacturing facility for quicklime is provided, which can manufacture highly active quicklime by a simple manufacturing facility, and which can also separate and recover, in a high concentration, CO | 09-12-2013 |
20130236258 | CUTTING INSERT - The present invention relates to the cutting insert having a cutting edge which has a corner section that forms a convex arc shape when seen in a planar view from direction facing the rake face and a linear section that is in contact with the corner section at least at one end of the corner section and extends linearly. The cutting edge is provided with a first region along the corner section when seen in a planar a second region along the linear section and a third region between the first region and the second region. A rake angle of the cutting edge in the third region is made greater than rake angles of the cutting edges in the first region and the second region. | 09-12-2013 |
20130236257 | CUTTING INSERT - The present invention relates to a cutting insert having a cutting edge which is provided with a corner section that forms a convex arc shape when seen in a planar view from the direction facing the rake face and a pair of linear sections that are in contact with the corner section at the both ends thereof. The cutting edge is provided with a first region along the corner section, a second region along the linear section and a third region positioned between them, and a cross-sectional area of the insert main body on a cross-section orthogonal to the cutting edge in a range of width which is a radius R (mm) of the corner section is made largest in the third region, smallest in second region and between them in the first region in terms of size. | 09-12-2013 |
20130234191 | COMPOSITION FOR REFLECTION FILM FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND METHOD OF PRODUCING LIGHT EMITTING ELEMENT - A light emitting element having a light emitting layer, an electro-conductive reflection film that reflects light emitted from the light emitting layer and a substrate in this order, wherein the electro-conductive reflection film contains metal nanoparticles. | 09-12-2013 |
20130232783 | CERAMIC SUBSTRATE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE - Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %. | 09-12-2013 |
20130231754 | POROUS IMPLANT MATERIAL - A plurality of porous metal bodies which are bonded with each other at bonded-boundary surfaces parallel to a first direction, each of the porous metal bodies has a three-dimensional network structure formed from a continuous skeleton in which a plurality of pores are interconnected so as to have a porosity rate different from another porous metal body, the pores formed in at least the porous metal body having the higher porosity rate are formed to have flat shapes which are long along a direction parallel to the bonded-boundary surface and short along a direction orthogonal to the bonded-boundary surface, entire porosity rate of a bonded body of the porous metal bodies is 50% to 92%, a compressive strength compressing in the direction parallel to the bonded-boundary surface is 1.4 times to 5 times of a compressive strength compressing in the direction orthogonal to the bonded-boundary surface. | 09-05-2013 |
20130230738 | POROUS IMPLANT MATERIAL - Providing porous implant material having a strength property approximate to human bone, without arising stress shielding, and which is possible to maintain sufficient bound strength with human bone. Porous implant material according to the present invention has a plurality of porous metal bodies | 09-05-2013 |
20130230734 | POROUS IMPLANT MATERIAL - Porous implant material having a plurality of metal bodies having different porosity rates which are bonded with each other at bonded-boundary surface F parallel to a first direction, wherein: a bonded body of the metal bodies has an entire porosity rate of 50% to 92%; the metal body having higher porosity rate is a porous metal body having a three-dimensional network formed from a continuous skeleton in which a plurality of pores are interconnected; the metal body having lower porosity rate has a porosity rate of 0 to 50% and an area-occupation rate of 0.5% to 50% in a cross-section surface orthogonal to an axial direction which agrees with the first direction along the bonded-boundary surface; and a compressive strength compressing in a direction parallel to the bonded-boundary surface is 1.4 times to 10 times of a compressive strength compressing in a direction orthogonal to the bonded-boundary surface. | 09-05-2013 |
20130226309 | POROUS IMPLANT MATERIAL - Providing porous implant material having a strength property approximate to human bone, without arising stress shielding, and which is possible to maintain sufficient bound strength with human bone. Porous implant material has a porous metal body having a three-dimensional network structure formed from a continuous skeleton | 08-29-2013 |
20130224401 | SILICON SEED ROD ASSEMBLY OF POLYCRYSTALLINE SILICON, METHOD OF FORMING THE SAME, POLYCRYSTALLINE SILICON PRODUCING APPARATUS, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON - A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod. | 08-29-2013 |
20130221284 | CARBON NANOFIBER DISPERSION LIQUID, COATING COMPOSTION, AND PASTE COMPOSITION - A carbon nanofiber dispersion liquid having an excellent dispersibility and dispersion stability. Also, coating paste compositions including the carbon nanofibers produced by using the dispersion liquid are provided. The carbon nanofiber dispersion liquid includes: a solvent; a carbon nanofiber; an alkanolamine; and a chelating agent. Preferably, in the carbon nanofiber dispersion liquid, the alkanolamine is at least one selected from a group consisting of monoisopropanolamine, diisopropanolamine, and triisopropanolamine. Also, in the carbon nanofiber dispersion liquid, the chelating agent is at least one selected from a group consisting of an aminocarboxylic acid chelating agent, a phosphonic acid chelating agent, a gluconic acid chelating agent, and an organic acid. | 08-29-2013 |
20130214412 | METHOD OF FORMING THIN FILM INTERCONNECT AND THIN FILM INTERCONNECT - A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu—Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu—Ca alloy film by sputtering method using a Cu—Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu—Ca alloy film at a temperature of 300 to 700° C. in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10 | 08-22-2013 |
20130214216 | CONDUCTIVE REFLECTIVE FILM AND METHOD OF MANUFACTURING THE SAME - A conductive reflective film has a silver nanoparticle-sintered film with a surface coating composition containing a hydrolysate of a metal alkoxide wet-coated thereto. The coated film is then fired. Also provided is a method of manufacturing the conductive reflective film comprising the steps of coating a surface coating composition containing a hydrolysate of a metal alkoxide on a silver nanoparticle-sintered film using a wet coating method, and firing the silver nanoparticle-sintered film having the coated film. The conductive reflective film provides improved adhesion properties with respect to a base material while maintaining a high reflectivity and a high conductivity of a silver nanoparticle-sintered film. | 08-22-2013 |
20130213261 | SILVER POWDER FOR SILVER CLAY AND SILVER CLAY INCLUDING SAME SILVER POWDER - A silver powder for silver clay, wherein a main component is Ag, and an amount of P is controlled to be 100 ppm or less. | 08-22-2013 |
20130205862 | DIE FOR PRESS WORKING - A die for press working includes a punch part and a die part. The outer peripheral surface and tip surface of the punch part and the inner peripheral surface of the die part are coated with carbon films having a surface roughness Ra of 0.05 μm or lower. An intra-punch refrigerant flow channel in the punch part allows a cooling medium to flow. An intra-die refrigerant flow channel in the die part allows the cooling medium to flow. The intra-punch refrigerant flow channel has a central flow channel portion where a tip on the central axis of the punch part is disposed at a tip of the punch part. Radial flow channel portions have base ends connected to the tip of the central flow channel portion, extending radially at mutually equiangular intervals. Outer peripheral flow channel portions have base ends connected to the tips of the radial flow channel portions. | 08-15-2013 |
20130196171 | TIN-PLATED COPPER-ALLOY MATERIAL FOR TERMINAL AND METHOD FOR PRODUCING THE SAME - Tin-plated copper-alloy material for terminal having: a substrate made of Cu or Cu alloy; an Sn-based surface layer formed on a surface of the substrate; and a Cu—Ni—Sn alloy layer including Ni formed between the Sn-based surface layer and the substrate, in which the Cu—Ni—Sn alloy layer is made of: fine Cu—Ni—Sn alloy particles; and coarse Cu—Ni—Sn alloy particles, an average thickness of the Sn-based surface layer is not less than 0.2 μm and not more than 0.6 μm, an area ratio of the Cu—Ni—Sn alloy layer exposed at a surface of the Sn-based surface layer is not less than 10% and not more than 40%, and a coefficient of kinetic friction of the tin-plated copper-alloy material for terminal is not more than 0.3. | 08-01-2013 |
20130187104 | INDIUM TIN OXIDE POWDER, METHOD FOR PRODUCING SAME, DISPERSION, PAINT, AND FUNCTIONAL THIN FILM - This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D | 07-25-2013 |
20130180302 | RING ROLLING MILL AND RING ROLLING METHOD - This ring rolling mill includes a main roll and a mandrel that are brought close to or separated from each other, and roll a peripheral portion of a ring-shaped body in a radial direction of the ring-shaped body while the ring-shaped body is rotated along its peripheral direction in a state where the peripheral portion of the ring-shaped body is pinched in the radial direction between an outer peripheral surface of the main roll, and an outer peripheral surface of the mandrel. This ring rolling mill further includes a mechanism which inclines and supports the mandrel with respect to the rotation axis of the main roll such that the gap between the outer peripheral surface of the mandrel and the outer peripheral surface of the main roll differs on one side and on the other side as seen in a direction along the rotation axis of the main roll. | 07-18-2013 |
20130177776 | SURFACE-COATED WC-BASED CEMENTED CARBIDE INSERT - Provided is a surface-coated cemented carbide insert obtained by containing at least WC powder and Co powder as raw materials, including a WC-based cemented carbide obtained by forming and sintering mixed raw materials containing at least any of (a) Zr compound powder, Nb compound powder, and Ta compound powder, (b) complex compound powder of Nb and Ta, and Zr compound powder, (c) complex compound powder of Nb, Ta, and Zr, (d) complex compound powder of Nb, Zr, and Ta compound powder, and (e) complex compound powder of Ta and Zr, and Nb compound powder, as essential powder components, as a substrate, and forming a hard coating layer on the substrate by vapor deposition, in which a Co enrichment surface region is formed in a substrate surface, Co content in the Co enrichment surface region satisfies to be between 1.30 and 2.10 (mass ratio) of Co content in cemented carbide. | 07-11-2013 |
20130174904 | COMPOSITION FOR ANTIREFLECTIVE FILM FOR SOLAR CELL, ANTIREFLECTIVE FILM FOR SOLAR CELL, METHOD FOR MANUFACTURING ANTIREFLECTIVE FILM FOR SOLAR CELL, AND SOLAR CELL - This composition for an antireflective film includes a translucent binder, wherein the translucent binder contains either one or both of a polymer type binder and a non-polymer type binder, a content of the translucent binder is in a range of 10 parts by mass to 90 parts by mass with respect to 100 parts by mass of a total amount of components other than a dispersion medium, and a refractive index of an antireflective film which is formed by curing the composition for an antireflective film is in a range of 1.70 to 1.90. This method for manufacturing an antireflective film includes: applying the above-described composition for an antireflective film onto a transparent conductive film by a wet coating method to form an antireflective coating film; and curing the antireflective coating film to form an antireflective film. | 07-11-2013 |
20130156631 | METHOD OF REMOVING OXIDE FILM ON SURFACE OF COPPER OR COPPER-BASE ALLOY AND COPPER OR COPPER-BASE ALLOY RECOVERED USING THE METHOD - A pickling solution, including: 50 g/L to 400 g/L of sulfuric acid; 1 g/L to 100 g/L of at least one oxidant selected from a group consisting of nitric acid, hydrogen peroxide, peroxodisulfate ions, and iron (III) ions; 0.01 g/L to 10 g/L of at least one additive selected from a group consisting of aromatic sulfonic acid, aromatic sulfonate, alkylamine, aromatic carboxylic acid, and aromatic carboxylate; 0.005 g/L to 10 g/L of at least one surfactant selected from a group consisting of alkylbenzene sulfonic acid and alkylbenzene sulfonate; and 10 g/L to 300 g/L of copper sulfate, is used to remove oxide film, and then reused by being electrolyzed and adding the oxidant, the additive and the surfactant in amounts equivalent to consumed amounts. | 06-20-2013 |
20130156513 | HELICAL BROACH - This helical broach forms a twisted groove at the inner circumference of a machined hole of a workpiece by a plurality of cutting teeth, the plurality of cutting teeth include a plurality of circumference cutting teeth which are arranged on the tip-end side of the broach body, and include a plurality of tooth thickness cutting teeth which are arranged on the rear-end side of the broach body. The plurality of tooth thickness cutting teeth include cutting edges and guiding edges, respectively. The tooth thickness cutting tooth positioned closest to the rear-end side of the broach body is provided with the guiding edge instead of the cutting edge at the intersecting ridge part between a rake face and a lateral surface facing one wall surface of both groove wall surfaces of the twisted groove of the workpiece. | 06-20-2013 |
20130155571 | DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD - A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba | 06-20-2013 |
20130140501 | SILVER-COATED SPHERICAL RESIN, METHOD FOR PRODUCING SAME, ANISOTROPICALLY CONDUCTIVE ADHESIVE CONTAINING SILVER-COATED SPHERICAL RESIN, ANISOTROPICALLY CONDUCTIVE FILM CONTAINING SILVER-COATED SPHERICAL RESIN, AND CONDUCTIVE SPACER CONTAINING SILVER-COATED SPHERICAL RESIN - This silver-coated spherical resin includes: a spherical resin; and silver coated on a surface of the spherical resin, wherein an amount of the silver is in a range of 2 to 80 parts by mass with respect to 100 parts by mass of the silver-coated spherical resin, and a crystallite diameter of the silver measured by X-ray diffractometry is in a range of 18 to 24 nm. This method for producing a silver-coated spherical resin includes: a process of subjecting a spherical resin to a pretreatment using an aqueous solution of a tin compound; and a subsequent process of subjecting the spherical resin to an electroless silver plating using a reducing agent, wherein, during the pretreatment, a temperature of the aqueous solution of the tin compound is set to be in a range of 20 to 45° C. | 06-06-2013 |
20130137899 | PROCESS FOR PRODUCING FLUORINE-CONTAINING SULFONYLIMIDE COMPOUND - In this process for producing a fluorine-containing sulfonylimide compound, a process for producing a fluorine-containing sulfonylimide compound ((Rf | 05-30-2013 |
20130136937 | COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING FERROELECTRIC THIN FILM, FERROELECTRIC THIN FILM, AND COMPLEX ELECTRONIC COMPONENT - A composition for forming a ferroelectric thin film is a composition for forming a ferroelectric thin film consisting of a lead titanate-based perovskite film or a lead zirconate titanate-based complex perovskite film. The composition includes lead acetate, a stabilizing agent consisting of acetylacetone or diethanolamine, and polyvinylpyrrolidone. The ratio of the molar number of the monomer-converted polyvinylpyrrolidone to the molar number of the perovskite B site atoms included in the composition is more than 0 and less than 0.015. The weight-average molecular weight of the polyvinylpyrrolidone is 5,000 to 100,000. | 05-30-2013 |
20130136667 | APPARATUS FOR PRODUCING TRICHLOROSILANE - An apparatus for producing trichlorosilane in which reacted gas including trichlorosilane and hydrogen chloride is produced by heating raw gas including silicon tetrachloride and hydrogen, the apparatus having: a reaction vessel having a substantially cylindrical shape and being provided with a heated wall forming a gas flow-passage along an axis direction; and a heater heating the heated wall, wherein a folding flow-passage is provided at an uppermost stream of the gas flow-passage and has: an inlet flow-passage in which raw gas is introduced; and a turning part connected to a downstream of the inlet flow-passage in which a flow direction of the raw gas is turned at least once in an opposite direction, the turning part is formed between the inlet flow-passage and the heated wall in the folding flow-passage, and a turning length of the folding flow-passage along the axis direction is smaller than a maximum length of the gas flow-passage along the axis direction. | 05-30-2013 |
20130126119 | MANUFACTURING METHOD FOR A MULTI-CHANNEL COPPER TUBE, AND MANUFACTURING APPARATUS FOR THE TUBE - This manufacturing apparatus for a multi-channel tube having a plurality of parallel channels includes: a crucible; and a die set for forming the multi-channel tube from molten copper supplied from the crucible, the die set including: a hollow portion having an inner surface shaped like the profile of the multi-channel tube; punches which are inserted into the hollow portion from an inlet end of the hollow portion to define a space between the inner surface of the hollow portion and each of the punches; and a feed passage which is disposed between the crucible and the space, and configured to feed the molten copper from the crucible to the space, the molten copper being supplied from the crucible to the space within the die set through the feed passage to solidify as it passes through the hollow portion. | 05-23-2013 |
20130122305 | INDIUM TIN OXIDE POWDER, PRODUCTION METHOD THEREFOR, TRANSPARENT CONDUCTIVE COMPOSITION, AND INDIUM TIN HYDROXIDE - One aspect of an indium tin oxide powder has a specific surface area of 55 m | 05-16-2013 |
20130122278 | POLYCRYSTALLINE SILICON INGOT MANUFACTURING APPARATUS, POLYCRYSTALLINE SILICON INGOT MANUFACTURING METHOD, AND POLYCRYSTALLINE SILICON INGOT - A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot. | 05-16-2013 |
20130121908 | METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES - The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor. | 05-16-2013 |
20130108382 | END MILL | 05-02-2013 |
20130099032 | APPARATUS FOR FRACTURING AND METHOD FOR PRODUCING FRACTURED FRAGMENTS - An apparatus for fracturing in which: a fracturing tooth is formed so as to have a larger base part than a top end; a fixing cover is formed along a longitudinal direction of rolls and is provided with fixing holes for fracturing teeth arranged along the longitudinal direction, expanded parts which are formed by expanding both sides of the fixing holes, and an indented part which is formed by narrowing a part between the fixing holes with respect to the expanded parts; the base part of the fracturing tooth is held between the roll and the fixing cover fixed on the roll and the indented part and the expanded part of the adjacent fixing cover are engaged with each other in fracturing teeth unit, so that the fracturing teeth are arranged in a staggered manner. | 04-25-2013 |
20130099031 | APPARATUS FOR FRACTURING AND METHOD FOR PRODUCING FRACTURED FRAGMENTS - An apparatus for fracturing in which: a fracturing tooth is formed so that a base-end portion has a larger diameter than that of a top-end portion, and a tapered part is formed at the base-end portion so as to expand from the top toward the base; a fixing cover is formed along a longitudinal direction of rolls; in the fixing cover, fixing holes for fracturing teeth are formed along the longitudinal direction so that the fracturing tooth is inserted therein; each of the fixing holes has a slope in which the tapered part is in contact at a surface; a fracturing teeth unit is fixed to the roll in a state in which the top-end portion of the fracturing tooth is protruded from the fixing hole radially-outwardly of the roll and the tapered part is wedged between the slope of the fixing hole and the roll. | 04-25-2013 |
20130075272 | HIGHLY PURE COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, METHOD FOR MANUFACTURING SAME, AND ELECTROLYTIC COPPER PLATING METHOD - Provided are a highly pure copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the highly pure copper anode. The highly pure copper anode obtains a crystal grain boundary structure having a special grain boundary ratio Lσ | 03-28-2013 |
20130066110 | METHOD FOR MANUFACTURING FLUORINE-CONTAINING IMIDE COMPOUND - With this method for manufacturing fluorine-containing imide compounds, a method for manufacturing a fluorine-containing imide compound ((Rf | 03-14-2013 |
20130056116 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - A copper alloy for an electronic device containing Mg in a range of 2.6 atomic % or more and 9.8 atomic % or less, Al in a range of 0.1 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. | 03-07-2013 |
20130051942 | DETACHABLE INSERT TYPE CUTTING TOOL - This detachable insert type cutting tool is provided with a cutting insert and a holder which holds the cutting insert. An insert mounting seat on which the cutting insert is mounted and upper and lower jaw sections which pinch the cutting insert are provided in the holder. The insert mounting seat is provided between the lower surface of the upper jaw section and the upper surface of the lower jaw section. Convex curve outer surfaces are formed on one side of the upper and lower jaw sections when viewed from the leading end sides of the upper and lower jaw sections, and concave curve inner surfaces are formed on the other side of the upper and lower jaw sections. In a state where the cutting insert is fixed to the insert mounting seat, the concave curve inner surface of the upper jaw section is disposed at a position retreated further radially outward than an arc surface extending along the concave curve inner surface of the lower jaw section. | 02-28-2013 |
20130048162 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, | 02-28-2013 |
20130028825 | MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X<30 mm) in hight, a second region from X to Y (30 mm≦Y<100 mm), and a third region of the Y or higher, with the bottom of the crucible as a datum, a solidification rate V1 in the first region is in a range of 10 mm/h≦V1≦20 mm/h, and a solidification rate V2 in the second region is in a range of 1 mm/h≦V2≦5 mm/h. | 01-31-2013 |
20130017025 | END MILLAANM Azegami; TakayukiAACI Akashi-shiAACO JPAAGP Azegami; Takayuki Akashi-shi JP - Provided is an end mill wherein:
| 01-17-2013 |
20130015600 | APPARATUS FOR PRODUCING POROUS BODY AND METHOD FOR PRODUCING POROUS BODY - An apparatus for producing a porous body that forms an expandable slurry containing at least inorganic powder, a foaming agent, and a binder into a sheet, causes the expandable slurry sheet to be foamed and baked, and thereby produces the porous body, the apparatus includes: a mixer preparing the expandable slurry by containing inorganic powder, a foaming agent, and a binder; a die-coater that has a discharge opening which discharges the expandable slurry provided from the mixer to an external thereof so as to shape the expandable slurry into a sheet; and a carrier sheet arranged so as to face the discharge opening of the die-coater with a gap interposed therebetween, and feeding the expandable slurry discharged from the discharge opening, wherein a flow path of the expandable slurry from inside the mixer to the discharge opening of the die-coater is hermetically sealed from an outside. | 01-17-2013 |
20130015318 | LAYERED CRUCIBLE FOR CASTING SILICON INGOT AND METHOD OF PRODUCING SAMEAANM Wakita; SaburoAACI Noda-shiAACO JPAAGP Wakita; Saburo Noda-shi JPAANM Tsuzukihashi; KojiAACI Akita-shiAACO JPAAGP Tsuzukihashi; Koji Akita-shi JPAANM Ikeda; HiroshiAACI TokyoAACO JPAAGP Ikeda; Hiroshi Tokyo JPAANM Kanai; MasahiroAACI Akita-shiAACO JPAAGP Kanai; Masahiro Akita-shi JP - Provided are a layered crucible for casting a silicon ingot that can suppress dissolution of oxygen into the silicon ingot and a method of producing the same crucible. The layered crucible for casting a silicon ingot is used in the production of a silicon ingot by melting and casting a silicon raw material. The layered crucible comprising: a silica layer provided on the inner side of a mold; and a barium coating layer provided on the surface of the silica layer. | 01-17-2013 |
20130010429 | METHOD FOR PRODUCING SUBSTRATE FOR POWER MODULE WITH HEAT SINK, SUBSTRATE FOR POWER MODULE WITH HEAT SINK, AND POWER MODULE - A method for producing a substrate for a power module with a heat sink includes a heat sink bonding step for bonding a heat sink to the surface of a second metal plate. The heat sink bonding step includes: a Cu layer forming step for forming a Cu layer on at least one of the surface of the second metal plate and a bonding surface of the heat sink; a heat sink laminating step for laminating the second metal plate and the heat sink via the Cu layer; a heat sink heating step for pressing in the lamination direction and heating the second metal plate and the heat sink, to diffuse Cu in the Cu layer into the second metal plate and the heat sink; and a molten metal solidifying step for solidifying the molten metal formed with Cu diffusion, to bond the second metal plate and the heat sink. | 01-10-2013 |
20130008371 | METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X<30 mm), a second zone from X to Y in height (30 min≦Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≦V1≦20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≦V2≦5 mm/h. | 01-10-2013 |
20130004404 | METHOD FOR MANUFACTURING TRICHLOROSILANE - This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted. | 01-03-2013 |
20130001078 | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - [Problems to be Solved] | 01-03-2013 |
20120328468 | PROCESSED HIGH-PURITY COPPER MATERIAL HAVING UNIFORM AND FINE CRYSTALLINE STRUCTURE, AND PROCESS FOR PRODUCTION THEREOF - This worked high-purity copper material includes Cu having a purity of 99.9999% by mass or more, wherein an average crystal grain size is in a range of 20 μm or less, and in a grain size distribution of crystal grains, an area ratio of crystal grains having grain sizes that exceed 2.5 times the average crystal grain size is in a range of less than 10% of an area of the entire crystal grains. This method for producing a worked high-purity copper material includes: subjecting an ingot composed of high-purity copper having a Cu purity of 99.9999% by mass or more to hot forging at an initial temperature of 550° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to warm forging at an initial temperature of 350° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to cold cross-rolling at a total reduction ratio of 50% or more; and subsequently, subjecting the ingot to stress relief annealing at a temperature of 200° C. or higher. | 12-27-2012 |
20120328379 | CUTTING EDGE REPLACEMENT TYPE GROOVE FORMING TOOL AND END FACE GROOVE FORMING METHOD - A cutting insert ( | 12-27-2012 |