Sanken Electric Co., Ltd. Patent applications |
Patent application number | Title | Published |
20160118486 | SEMICONDUCTOR DEVICE - Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition and second layer containing less Al than the first layer, the first and second layers being alternately stacked; second buffer layer on the first buffer layer and is formed of third layer containing Al composition and fourth layer containing less Al than the third layer, the third and fourth layers being alternately stacked; and third buffer layer on the second buffer layer and is formed of fifth layer containing Al composition and sixth layer containing less Al than the fifth layer, the fifth and sixth layers being alternately stacked, wherein the second buffer layer contains more Al than the first and third buffer layers. Thus, the semiconductor device leakage can be suppressed while reducing stress which is applied to buffer layer and can improve flatness of active layer upper face. | 04-28-2016 |
20160111273 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided. | 04-21-2016 |
20160087529 | Bootstrap Circuit - A bootstrap circuit includes an N-channel MOS transistor including: a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor; a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer; a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer; a first electrode electrically connected to the P-type semiconductor layer; a second electrode electrically connected to the second N-type semiconductor layer; and a power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode. | 03-24-2016 |
20160087519 | Switching Power-Supply Device - A switching power-supply device performs a control of an output voltage by switching operation of a switching element and has an integrated circuit including the switching element and a driving circuit for performing on-and-off control of the switching element. The integrated circuit includes an input terminal connected to the switching element, a voltage detection circuit, which detects a voltage of the input terminal, a timing control circuit, which controls a timing of detecting the voltage by the voltage detection circuit, and a control unit, which performs a control according to the voltage detected by the voltage detection circuit. | 03-24-2016 |
20150381055 | Switching Power-Supply Device - A switching power-supply device which includes a control unit configured to perform a switching control; and a resonance current detection unit configured to detect the resonance current flowing through the series resonance circuit. | 12-31-2015 |
20150249380 | Switching Power-Supply Device - A switching power-supply device, in which an input power is applied to a primary winding of a transformer, a pulse voltage is induced in a secondary winding of the transformer by turning on and off a switching element connected to the primary winding of the transformer and an output voltage rectified and smoothed by a secondary-side rectifying-and-smoothing circuit having a rectifier diode and a smoothing capacitor is outputted, the switching power-supply device includes: a transient state detection circuit, which detects a transient state and outputs a soft-drive instruction signal; and a drive circuit which turns on-and-off the switching element in a soft-drive operation, in which a charging speed of a gate voltage at a time of passing a gate threshold voltage is delayed as compared to a normal operation, in a case where the soft-drive instruction signal is inputted. | 09-03-2015 |
20150229216 | Switching Power-Supply Device - Provided is a switching power-supply device capable of balancing a plurality of converter blocks operated in parallel. The switching power-supply device includes a first series circuit of first and second switching elements, a second series circuit of third and fourth switching elements, which circuits are connected in parallel with a power supply, and a control circuit that turns on-and-off the first and second switching elements, alternately, with an arbitrary frequency and turns on-and-off the third and fourth switching elements, alternately, with the same frequency as the arbitrary frequency. The control circuit controls a phase difference of switching signals of the first and second series circuits. | 08-13-2015 |
20150214844 | Switching Power-Supply Device - Provided is a highly-efficient switching power-supply device having a wide input voltage range. The switching power-supply device includes: a first series circuit including first and second switching elements and a second series circuit including third and fourth switching elements, which are connected in parallel with a power supply; a series resonance circuit including a primary coil and a capacitor connected in parallel with the second switching element; a reactor connected between a connection point of the third and fourth switching elements and the capacitor; a transformer having the primary coil and a secondary coil; and a control circuit that turns on-and-off the first and second switching elements, alternately, and turns on-and-off the third and fourth switching elements, alternately. The control circuit switches the first and second series circuits when an input voltage is low and switches only the first series circuit when the input voltage is high. | 07-30-2015 |
20150207419 | Switching Power-Supply Device - A switching power-supply device includes: a first series circuit including a first switching element; and a second switching element, a second series circuit including a third switching element and a fourth switching element; and a control unit that, while making frequencies of switching signals of the first series circuit and the second series circuit be the same, performs control of turning on-and-off the first switching element and the second switching element, alternately, with dead time at which the first switching element and the second switching element become off and turning on-and-off the third switching element and the fourth switching element, alternately, with dead time at which the third switching element and the fourth switching element become off, wherein the control unit controls a phase difference between the switching signal of the first series circuit and the switching signal of the second series circuit. | 07-23-2015 |
20150108540 | Semiconductor Device - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region; a first main electrode, which is electrically connected to the first semiconductor region, and a second main electrode, which is electrically connected to the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger. | 04-23-2015 |
20150091082 | Semiconductor Device - A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess. | 04-02-2015 |
20150091022 | Semiconductor Device and Method of Manufacturing the Same - A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode. | 04-02-2015 |
20150091021 | Method of Manufacturing Semiconductor Device and the Semiconductor Device - A method of manufacturing a semiconductor device includes: forming a gate electrode material layer made of a material configuring a gate electrode and a barrier material layer made of a silicon nitride film; forming an upper barrier layer configured to an upper surface of the gate electrode with the barrier material layer and forming the gate electrode from the gate electrode material later by etching the barrier material layer and the gate electrode material layer with a same mask pattern; forming a sidewall barrier layer configured to cover a side surface of the gate electrode by forming again the barrier material layer after the forming of the gate electrode; forming an interlayer insulation layer configured to cover a surface-side of the semiconductor substrate including the upper surface barrier layer and the sidewall barrier layer; and opening the interlayer insulation layer and forming the silicide electrode. | 04-02-2015 |
20150091020 | Semiconductor Device and Method of Manufacturing the Same - A semiconductor device includes: a gate oxide film formed on a surface of a semiconductor substrate; a gate electrode formed on the gate oxide film; and a high concentration impurity layer connected to a main electrode and formed on the surface of the semiconductor substrate, wherein an impurity species doped in the high concentration impurity layer comprises a first impurity species of phosphorous and a second impurity species of at least one of argon and nitrogen, a concentration of the second impurity species is higher than a concentration of the first impurity species in a surface of the high concentration impurity layer, and a peak position of a concentration distribution of the first impurity species in a depth direction in the high concentration impurity layer is deeper than a peak position of a concentration distribution of the second impurity species in the depth direction. | 04-02-2015 |
20150084123 | Semiconductor Device - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses. | 03-26-2015 |
20150084093 | Semiconductor Device - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses. | 03-26-2015 |
20150070942 | DC-DC CONVERTER - A DC-DC converter includes a coupling transformer that has windings | 03-12-2015 |
20150048810 | BIDIRECTIONAL DC-DC CONVERTER - A bidirectional DC-DC converter includes a series circuit of a first winding of a first reactor, a second reactor, and a first switch connected to both ends of a first DC power source, a series circuit of a second switch and a second DC power source connected to both ends of the first switch, a series circuit of a second winding of the first reactor, a third reactor, a first selector switch, and a first diode connected to both ends of a series circuit of the second reactor and the first switch, a series circuit of a second selector switch, a second diode, and the second DC power source connected to both ends of a series circuit of the first selector switch and first diode, and a controller turning on/off the switches and the selector switches. | 02-19-2015 |
20150041525 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, HEAT INSULATING LOAD JIG, AND METHOD FOR SETTING UP HEAT INSULATING LOAD JIG - In a heat insulating load jig | 02-12-2015 |
20150029628 | Low Current Protection Circuit - A low current protection circuit is configured to detect a lowering of a load current flowing a load to perform a low current protection operation and includes: a load current detection configured to detect a load current; a low current detection configured to detect a lowering of the load current by comparing the load current detected by the load current detection unit and a preset reference value; a protection unit configured to perform the low current protection operation when the lowering of the load current is detected by the low current detection unit; and a masking unit configured to mask the low current protection operation of the protection unit from when the lowering of the load current is detected by the low current detection unit to when a masking time period depending on a duty ratio of the external pulse signal elapses. | 01-29-2015 |
20140376271 | Switching Power-Supply Device - A switching power-supply device, includes a first terminal; a first winding connected to the first terminal; a second winding, which is connected in series to the first winding and is magnetically coupled to the first winding; a first capacitor connected in series to the second winding; a transformer including a primary winding connected in series to the first capacitor and a secondary winding magnetically coupled to the primary winding; a rectifying-and-smoothing circuit connected to the secondary winding; a second terminal, which is connected to an opposite end of the primary winding opposite to a connection end connecting to the first capacitor; a first switching element, which is connected between a connection point of the first winding and the second winding and the second terminal; and a control circuit, which controls first switching element to turn on-and-off. | 12-25-2014 |
20140362490 | Semiconductor Device and Control Method Thereof - A semiconductor device includes a switching element chip, in which a switching element is formed; a first sensing element, which is provided in the switching element chip and is configured to detect first output voltage based on an operating current of the switching element; a second sensing element, which is provided outside the switching element chip and is configured to detect second output voltage based on the operating current of the switching element; and a control circuit, which detects the operating current based on the second output voltage and interrupts the switching element, based on the first output voltage of the first sensing element and the detected operating current, when the switching element is overheated. | 12-11-2014 |
20140347895 | Switching Power-Supply Device - A switching power-supply device includes a COMP-voltage comparator circuit that compares a COMP-voltage obtained by performing phase compensation on the feedback signal, with a first threshold voltage which is a threshold value; and an intermittent-oscillation control circuit that, if it is detected by the COMP-voltage comparator circuit that the COMP-voltage is lower than the first threshold voltage, stops the switching operation of the switching device and performs a transition to a first intermittent oscillation operation in which the switching device performs the switching operation every predetermined first period, wherein if a predetermined delay period elapses in a state where the COMP-voltage is lower than the first threshold voltage, the intermittent-oscillation control circuit performs a transition to a second intermittent oscillation operation in which the switching device performs the switching operation every second period which is an integral multiple of the first period. | 11-27-2014 |
20140299977 | Semiconductor Device - A semiconductor device includes: a lead frame; an IC element mounted on a main face of the lead frame; an inductor mounted on a back face of the lead frame; and a resin body configured to seal the lead frame, the IC element and the inductor, wherein the inductor and the lead frame are closely contacted with each other, wherein the IC element is disposed at a position corresponding to an center axis of the inductor, wherein the inductor and the IC element are electrically connected to each other, and wherein wiring of main current flowing through the IC element is disposed between terminals of the inductor. | 10-09-2014 |
20140291797 | Semiconductor Device - A semiconductor device of this disclosure includes: a circuit element mounted on a main face of a lead frame; an inductor mounted on a back face of the lead frame; and a resin body sealing the circuit element and the inductor; wherein the circuit element includes a thermo-sensitive element and has an overheating protection function of the inductor. | 10-02-2014 |
20140233273 | SWITCHING POWER SOURCE DEVICE AND CONTROL IC WHICH ARE CAPABLE OF PERFORMING CONSTANT POWER CONTROL - The present invention is a switching power source device which converts AC power of an AC power source into DC power and outputs the DC power, the device including: a rectifying-smoothing circuit configured to output a rectified-smoothed voltage signal obtained by rectifying and smoothing an AC voltage of the AC power source; a transformer having a primary winding, a secondary winding, and an auxiliary winding; a switching element connected to the primary winding of the transformer; and a control circuit configured to turn the switching element on and off based on a voltage signal which is based on an average value of current flowing through the switching element and the rectified-smoothed voltage signal from the rectifying-smoothing circuit. | 08-21-2014 |
20140232270 | LED DRIVING DEVICE AND LED LIGHTING APPARATUS - The present invention supplies desired DC output power to a first LED load and a second LED load whose color temperature is different from that of the first LED load, includes a switching element, ripple current reducers series-connected to the respective LED loads and for reducing current ripples flowing through the LED loads, and a control circuit for controlling the DC output power so that it has a predetermined value, by performing on-off control of the switching element based on a feedback voltage at a connecting point between each of the LED loads and a corresponding one of the ripple current reducers. Each ripple current reducer has feedback-type constant current control circuits for performing control for varying impedance, and the present invention also includes color controllers for performing color control by maintaining a total LED current value of the first and second LED loads at a certain value. | 08-21-2014 |
20140210444 | Switching Power-Supply Device - A switching power-supply device includes a main switching element connected between a power-supply and an output terminal; a driving circuit that drives the main switching element; a capacitor that feeds power to the driving circuit; a charging circuit that charges the capacitor when the main switching element is switched from an on-state to an off-state; a switching control circuit that performs switching control of alternately switching the main switching element to the on-state and the off-state via the driving circuit; a voltage detection circuit that detects a voltage between both ends of the capacitor, and a driving control circuit that switches a state of prohibiting driving of the main switching element and a state of permitting driving of the main switching element, based on a difference between an output voltage output from the output terminal and a preset reference voltage and the voltage between both ends of the capacitor. | 07-31-2014 |
20140210047 | SEMICONDUCTOR DEVICE - A semiconductor device including: first and second semiconductor chips mounted on a base substrate; a third semiconductor chip, which is mounted on the base substrate, and outputs control signals controlling operations of the first and second semiconductor chips; a first transmission transformer, which is mounted on the base substrate, and has a reception-side terminal connected to the third semiconductor chip and a transmission-side terminal connected to the first semiconductor chip; and a second transmission transformer, which is mounted on the base substrate, and has a reception-side terminal connected to the third semiconductor chip and a transmission-side terminal connected to the second semiconductor chip, wherein the control signals are transmitted from the third semiconductor chip to the first semiconductor chip and the second semiconductor chip individually through the first transmission transformer and the second transmission transformer. | 07-31-2014 |
20140203791 | Switching Power-Supply Device and Method for Manufacturing Switching Power-Supply Device - A switching power-supply device includes a switching element; an output circuit; a feedback signal generation circuit; a control circuit that drives the switching element, based on the feedback signal, and controls the voltage of the power-supply output; a correction circuit that corrects a signal level of the feedback signal, wherein the control circuit comprises: an oscillation circuit that generates an on-trigger signal; a current detection circuit that generates a current detection signal; a difference detection circuit that generates a difference detection signal; a comparison circuit that generates an off-trigger signal, based on the current detection signal and the difference detection signal; and a first load detection circuit that controls an operation of the correction circuit, based on the current detection signal, and wherein the control circuit changes a setting voltage of the power-supply output, according to the signal level of the feedback signal. | 07-24-2014 |
20140191250 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer. | 07-10-2014 |
20140185336 | Switching Power Supply Apparatus and Method of Controlling Switching Power Supply Apparatus - A switching power supply apparatus includes a transformer having a primary winding, a secondary winding, and an auxiliary winding, a switching element coupled in series to the primary winding; an output circuit section generating a voltage output from power transferred from the primary winding to the secondary winding in response to a switching operation of the switching element, a feedback signal generation circuit section configured to, during a secondary side conduction period in which an electric current flows through the secondary winding, generate a feedback signal having a signal level corrected based on a length of the secondary side conduction period, from an auxiliary winding voltage induced in the auxiliary winding, and a control circuit section driving the switching element based on the feedback signal. | 07-03-2014 |
20140184095 | DC Power-Supply Apparatus - A DC power-supply apparatus of converting an AC input voltage rectified to a DC voltage and supplying it to a load, by performing on-and-off control of a switching element connected in series to a reactor, includes a control circuit, which operates in floating state with respect to a after-rectified ground line and controls an on-width of the switching element based on a value of current flowing through the reactor and the load connected in series with the reactor; and an oscillation circuit, which controls a switching frequency of the on-and-off control by the control circuit, asynchronously with energy release timing of the reactor. | 07-03-2014 |
20140177284 | Switching Power-Supply Apparatus - A switching power-supply apparatus includes: a control circuit that controls on-and-off switching of a switching element; a first rectifying-and-smoothing circuit that smoothes a voltage generated in a secondary winding; and a second rectifying-and-smoothing circuit that smoothes a voltage generated in a tertiary winding as a power supply voltage, a starting circuit that supplies: a first constant current to the control circuit when the power supply voltage is equal to or lower than a first threshold voltage, which is lower than a starting voltage of the control circuit, and is larger than the starting voltage of the control circuit, as a starting current; and a second constant current, which is greater than the first constant current, to the control circuit when the power supply voltage is larger than the first threshold voltage and is equal to or lower than the starting voltage, as the starting current. | 06-26-2014 |
20140159225 | SEMICONDUCTOR MODULE - A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member. | 06-12-2014 |
20140152277 | SWITCHING POWER SUPPLY DEVICE - The present invention includes: an ON-timer configured to control a period of time in which a main switching element is on; a voltage detecting circuit configured to detect an output voltage of a filter circuit; a triangular wave generator; a feed-forward circuit configured to generate a feed-forward output whose value decreases as a value of a DC voltage from a DC power supply increases; and a comparator configured to compare a second reference voltage generated by adding together a first reference voltage, a triangular wave signal from the triangular wave generator, and the feed-forward output from the feed-forward circuit, with the output voltage of the voltage detecting circuit, and based on a result of the comparison, output an ON-trigger signal for turning on the main switch element to the ON-timer. | 06-05-2014 |
20140125386 | GATE DRIVING CIRCUIT - A gate driving circuit is provided which is capable of alleviating the effect of a switching noise generated when an IGBT is turned on/off or a common mode noise on a gate driving signal. The gate driving circuit, a primary side and a secondary side thereof being insulated from each other by a pulse transformer; the primary side of the pulse transformer being grounded to a first ground potential point; the secondary side of the pulse transformer being grounded to a second ground potential point insulated from the first ground potential point; and a gate driving signal generated in a secondary winding of the pulse transformer being outputted through a receiver having impedance matching resistors on the input side, includes an electrostatic shield plate between a primary winding of the pulse transformer and the secondary winding, the electrostatic shield plate being grounded to the second ground potential point. | 05-08-2014 |
20140119084 | AC Input Voltage Detection Circuit and AC/DC Power Source - An AC input voltage detection circuit of detecting abnormality of an AC input voltage inputted to an AC/DC converter, includes: a first comparator circuit configured to compare the AC input voltage with a first reference voltage; a second comparator circuit configured to compare the AC detection voltage with a second reference voltage higher than the first reference voltage; and a timer circuit configured to start counting of a timer if the first comparator circuit detects that the AC input voltage is equal to or lower than the first reference voltage and to clear the counting of the timer if the second comparator detects that the AC input voltage is larger than the second reference voltage, wherein the timer circuit outputs an AC abnormality detection signal when a preset abnormality detection time is passed without clearing the counting since the counting of the timer has been started. | 05-01-2014 |
20140119065 | SWITCHING POWER-SUPPLY DEVICE - A switching power-supply device comprises: a transformer; a switching element connected in series with a primary coil; an output voltage generation circuit to generate an output voltage from a voltage generated in a secondary coil; a control circuit power-supply-voltage generation circuit to generate a power-supply voltage from a voltage generated in an auxiliary coil; a feedback control circuit to control an ON width of the switching element by using the voltage generated in the auxiliary coil; a voltage reduction detection circuit to output a pulse signal to the secondary coil when a reduction of the output voltage is detected; a voltage-reduction-signal detection circuit to detect the voltage reduction signal transmitted to the primary coil from the secondary coil; and a trigger circuit to output a trigger signal to turn on the switching element when the voltage reduction signal is detected by the voltage-reduction-signal detection circuit. | 05-01-2014 |
20140119061 | SYNCHRONOUS RECTIFIER CIRCUIT - Provided is a synchronous rectifier circuit which, even if a synchronous rectification element having a low on-resistance is used, can perform a synchronous rectifying operation without being influenced by the inductance component. It is a synchronous rectifier circuit having a synchronous rectification element Q | 05-01-2014 |
20140117972 | CURRENT DETECTION CIRCUIT - Provided is a current detection circuit which can reduce the resistance loss for a current transformer, meeting the requirements for size and cost thereof. The current detection circuit includes a current transformer and a capacitor connected across a secondary winding of the current transformer, the capacitor making a phase adjustment such that the primary side current flowing through the primary winding of the current transformer and the voltage across the capacitor are in phase with each other. With this configuration, the primary side current can be detected as the voltage across the capacitor with no need for using a matching resistor, with which, if the winding ratio of the current transformer is small, the resistance loss will be large, whereby a current detection circuit of low loss using a current transformer which is small in size and low in cost can be configured. | 05-01-2014 |
20140097466 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type collector region, a drift region arranged on the collector region, a base region arranged on the drift region, an emitter region arranged on the base region, a gate oxide film arranged on the bottom surface and side surface of a trench which penetrates the emitter region and the base region, and a gate electrode embedded in the inside of the trench so as to be opposed to the base region while interposing the gate oxide film therebetween, wherein the position of the lower surface of the base region is shallower in the region brought into contact with the gate oxide film than in the region spaced apart from the gate oxide film. | 04-10-2014 |
20140092642 | DIRECT-CURRENT POWER SUPPLY DEVICE - The present invention includes: a converter configured to convert the direct-current voltage of the rectifier to another direct-current voltage and supply to a load; a peak hold unit configured to hold a peak value of a current detected by a current detecting unit configured to detect a current flowing in the switching element; an averaging unit configured to convert, to a current, an output of an n/2 output unit, and then integrate and output the converted current, the n/2 output unit configured to output n/2 (n is an integer of 1 or more) of the held peak value only in a regeneration current period of the reactor; a control unit configured to turn the switching element on and off based on an output signal of the averaging unit in such a way that an average current value of a current flowing in the reactor is equal to a predetermined value. | 04-03-2014 |
20140091324 | SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE - A switching circuit includes: a first switching element (Q | 04-03-2014 |
20140073095 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A high electron mobility transistor includes first, second and third compound semiconductor layers. The second compound semiconductor layer has a first interface with the first compound semiconductor layer. The third compound semiconductor layer is disposed over the first compound semiconductor layer. The third compound semiconductor layer has at least one of lower crystallinity and relaxed crystal structure as compared to the second compound semiconductor layer. The gate electrode is disposed over the third compound semiconductor layer. Source and drain electrodes are disposed over the second compound semiconductor layer. The two-dimensional carrier gas layer is generated in the first compound semiconductor layer. The two-dimensional carrier gas layer is adjacent to the first interface. The two-dimensional carrier gas layer either is absent under the third compound semiconductor layer or is reduced in at least one of thickness and carrier gas concentration under the third compound semiconductor layer. | 03-13-2014 |
20140071724 | BRIDGE-LESS STEP-UP SWITCHING POWER SUPPLY DEVICE - A bridge-less step-up switching power supply device includes (i) a first and a second reactor having: a first and a second main winding connected to a first and a second input terminal, respectively; and a first and a second auxiliary winding magnetically coupled to the first main winding and connected to the first and second main windings, the first and second auxiliary windings having a first and a second leakage inductance, respectively; (ii) a first and a second diode connected between the first and second auxiliary windings and a first output terminal, respectively; (iii) a first capacitor connected between the first output terminal and a second output terminal; (iv) a second capacitor connected between a connection point of a third switch and a fourth switch, and the first output terminal; and (v) a controller for controlling turning on/off of first to fourth switches. | 03-13-2014 |
20140021876 | POWER CONVERTER - The present invention includes a first DC converter converting AC voltage, into DC voltage while correcting a power factor, and a second DC converter electrically isolating the first DC converter from an LED group load, and converting the DC voltage, into a predetermined DC voltage and supply the resultant voltage to the LED group load. The second DC converter includes a current detection circuit disposed on the secondary side, and detecting current flowing into the LED group load, an error amplifier amplifying an error between a detected current value detected and a reference current value, a signal transmission isolation element transmitting a control signal based on an output signal from the error amplifier, to the primary side, and a switching element transferring power to the secondary side through the transformer by being turned on/off according to the control signal. | 01-23-2014 |
20130328107 | SEMICONDUCTOR DEVICE - A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode. | 12-12-2013 |
20130294114 | Direct-Current Converter - A direct-current converter comprises: a first series circuit, which is connected in parallel with a smoothing capacitor and in which a first switching element and a second switching element are connected in series; a second series circuit, which is connected in parallel between main electrodes of the first switching element and in which a resonance capacitor, a resonance reactor and a primary winding of a transformer are connected in series; a half wave rectification smoothing circuit, which rectifies and smoothes a voltage of a secondary winding of the transformer; a control circuit configured to alternately turn on and off the first switching element and second switching element, based on art output voltage of the rectification smoothing circuit; and a third series circuit, which is connected in parallel with the second switching element and in which a boost reactor and a direct-current power supply are connected in series. | 11-07-2013 |
20130253865 | Alternating Current Input Voltage Detection Circuit - An alternating current input voltage detection circuit comprises: a first voltage waveform detection circuit that detects a voltage waveform of one alternating current input terminal of the diode rectification circuit, based on a reference potential of the device; a second voltage waveform detection circuit that detects a voltage waveform of the other alternating current input terminal of the diode rectification circuit, based on the reference potential of the device, and a voltage waveform generation circuit that: calculates a first detection voltage waveform, which is output from the first voltage waveform detection circuit, and a second detection voltage waveform, which is output from the second voltage waveform detection circuit; generates a voltage waveform signal, in which waveform distortions generated in the first detection voltage waveform and the second detection voltage waveform are eliminated; and outputs the voltage waveform signal as the voltage detection signal. | 09-26-2013 |
20130248815 | SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor photocathode includes an Al | 09-26-2013 |
20130207626 | Switching Power Supply Circuit - A switching power supply circuit includes: a reactor that has a main winding and an auxiliary winding having a leakage inductance, which are magnetically coupled with each other and are connected with each other at one ends thereof; a first series circuit, which has an auxiliary switch and a resonance capacitor connected in series, and which is connected in parallel with a direct current power supply via a main switch; a first diode that, which is connected in parallel with the first series circuit via the auxiliary winding; a smoothing capacitor, which is connected in parallel with at least one of the first series circuit and first diode via the main winding; and a control circuit, which alternately turns on and off the main switch and auxiliary switch to thus control an output voltage of the smoothing capacitor to be a predetermined value. | 08-15-2013 |
20130193992 | Current Detection Circuit - A current detection circuit comprises: a series circuit of a first current detection part series to a first semiconductor and a second current detection part, which detects current having a smaller range than the first current detection part; a second semiconductor device, which is provided with a second drive circuit, connected in parallel with the second current detection part; and a current determination circuit configured to switch between the first current detection part and the second current detection part, based on the magnitude of the detection current of the first current detection part, wherein, when the detection current of the first current detection part is larger than a predetermined value, the voltage from the first current detection part is output, and wherein, when the detection current of the first current detection part is smaller than the predetermined value, the voltage from the second current detection part is output. | 08-01-2013 |
20130181763 | LEVEL SHIFTER - A level shifter includes a resistor R | 07-18-2013 |
20130175933 | Light Emitting Element Driving Device - A light emitting element driving device, which flashing-drive a plurality of light emitting element arrays connected in parallel by switching elements connected in series with each of the plurality of light emitting element arrays, the light emitting element driving device including: a current detection unit configured to detect respective currents flowing through each of the plurality of light emitting element arrays as currents of the light emitting element arrays; a selection unit configured to select the smallest current of the light emitting element arrays of the detected currents obtained by the current detection unit; and an output voltage control unit configured to control output voltage supplied to the plurality of light emitting element arrays so that the current of the light emitting element arrays selected by the selection unit becomes a preset reference current value. | 07-11-2013 |
20130117841 | INFORMATION PROCESSING PROGRAM AND INFORMATION PROCESSING METHOD - An information processing device stores, in a storage device, command execution user data associating an attribute of a command with a name of a user entitled to execute the command. When execution of the command is requested, a service of the information processing device extracts, from the command execution user data, a name of a user entitled to execute the requested command and executes the command with the extracted user name. | 05-09-2013 |
20130106468 | GATE DRIVER | 05-02-2013 |
20130075925 | SEMICONDUCTOR DEVICE - A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor device | 03-28-2013 |
20130070487 | DRIVE CIRCUIT - A drive circuit drives a normally-on high-side switch Q | 03-21-2013 |
20130021007 | SWITCHING POWER SOURCE CIRCUIT - A switching power source circuit includes a first reactor having coils L | 01-24-2013 |
20130016534 | RESONANT CONVERTERAANM ISHIKURA; KeitaAACI SaitamaAACO JPAAGP ISHIKURA; Keita Saitama JPAANM ASO; ShinjiAACI SaitamaAACO JPAAGP ASO; Shinji Saitama JP - A resonant converter includes: a first switching element and a second switching element, which are connected in series; a series resonant circuit, which includes a primary coil of a transformer having leakage inductance and a current resonant capacitor, and which is connected in parallel to one of the first switching element and the second switching element; a rectifying-and-smoothing circuit, which is connected to a secondary coil of the transformer, wherein an output voltage is to be supplied to a load; and a clamp circuit, which clamps a voltage between both ends of the current resonant capacitor to a predetermined voltage value, wherein, when an output current supplied from the rectifying-and-smoothing circuit to the load is higher than the predetermined current value, an output characteristic is set so that, as the output current is increased, the output voltage is decreased. | 01-17-2013 |
20130016531 | POWER SUPPLY DEVICE AND METHOD OF CONTROLLING POWER SUPPLY DEVICEAANM ASO; ShinjiAACI Niiza-shiAACO JPAAGP ASO; Shinji Niiza-shi JP - The present invention includes: a power factor correction circuit configured to correct a power factor; a DC/DC converter configured to convert an output voltage of the power factor correction circuit to a different direct-current voltage; an input voltage detector configured to detect an input voltage inputted into the power factor correction circuit; and a power factor correction circuit output voltage controller configured to generate a voltage instruction for controlling the output voltage of the power factor correction circuit, based on a value of the detected input voltage, an output current value to a load connected to an output of the DC/DC converter or an output power value of the load, as well as a set value of an input voltage short break output hold time, and to output the voltage instruction to the power factor correction circuit. | 01-17-2013 |
20130009675 | GATE DRIVER - A gate driver of a switching element Q | 01-10-2013 |
20130003426 | SWITCHING POWER SUPPLY DEVICE - During a soft start period at the time of startup, a PWM control is carried out. After the soft start period ends, the PWM control is converted into a frequency control, so that stress of a switching element is suppressed and the audible oscillation frequency is removed. As a result, it is possible to obtain a switching power supply device having high power conversion efficiency. | 01-03-2013 |
20120326160 | SEMICONDUCTOR DEVICE HAVING NITRIDE SEMICONDUCTOR LAYER - A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride semiconductor films are laminated, and a semiconductor functional layer which is arranged on the buffer layer and made of nitride semiconductor. | 12-27-2012 |
20120320637 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus has a pulse generator of a first pulse. A first resonant series circuit receives the first pulse signal and passes a current having a 90-degree phase delay with respect to the first pulse signal. The current of the first resonant series circuit turns on/off a switching element Q | 12-20-2012 |
20120319610 | LED LIGHTING APPARATUS - An LED lighting apparatus includes a series circuit that includes a primary winding P of a transformer T and a switching element Q | 12-20-2012 |
20120319283 | SEMICONDUCTOR DEVICE HAVING EXTERNAL ELECTRODES EXPOSED FROM ENCAPSULATION MATERIAL - A semiconductor device includes a semiconductor element including an anode electrode and a cathode electrode, an encapsulating material which covers the semiconductor element, a first external electrode which is electrically connected to the cathode electrode and is at least partially exposed outside of the encapsulating material, a second external electrode which is electrically connected to the anode electrode and is at least partially exposed outside of the encapsulating material, and a sacrificial metallic body which is arranged outside of the encapsulating material so as to be in direct contact with the first external electrode or to be electrically connected to the first external electrode through saltwater, and contains metal having larger ionization tendency than any metal contained in the first external electrode. | 12-20-2012 |
20120307529 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a first arm including first and second switching elements, a second arm including third and fourth switching elements, a series circuit connected between a connection point of the first and second switching elements and a connection point of the third and fourth switching elements and including a capacitor and a primary winding, a rectifying-smoothing circuit that rectifies and smoothes a voltage of a secondary winding and provides an output voltage, a reactor connected to a connection point of the first and second switching elements and a DC input end, and a controller that turns on/off the first and second switching elements alternately and the third and fourth switching elements alternately and synchronizes the first and third switching elements with each other and the second and fourth switching elements with each other. | 12-06-2012 |
20120306545 | GATE DRIVER - A gate driver turns on/off a switching element Q | 12-06-2012 |
20120299625 | GATE DRIVING CIRCUIT - A gate driving circuit includes a control power; a transformer having a primary winding and a secondary winding; a first switching element; a second switching element; a rectifying element; and a capacitance element, wherein the first switching element is connected between the control power and one end of the primary winding, and the second switching element is connected to the other end of the primary winding, wherein one end of the capacitance element is connected to either one of the one end and the other end of the primary winding, and wherein, when one of the first switching element and the second switching element is turned on, the capacitance element is charged by the control power, and when the other of the first switching element and the second switching element is turned on, the capacitance element is discharged. | 11-29-2012 |
20120267748 | SEMICONDUCTOR DEVICE INCLUDING SCHOTTKY BARRIER JUNCTION AND PN JUNCTION - A semiconductor device includes a first conductivity-type semiconductor stack including the recesses which extend from a first principal surface toward a second principal surface and have bottoms not reaching the second principal surface, the second conductivity-type anode regions which are embedded at a distance from one another in the first principal surface, each of which has a part of an outer edge region exposed to a side surface of the corresponding recess, an anode electrode which is provided on the first principal surface of the semiconductor stack to form a Schottky barrier junction with the semiconductor stack in a region where the plurality of anode regions are not formed and form ohmic junctions with the anode regions; and a cathode electrode provided on the second principal surface of the semiconductor stack. | 10-25-2012 |
20120261716 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a buffer layer, and a compound semiconductor layer. The buffer layer is configured by laminating two or more pairs of a first buffer and a second buffer. The first buffer is formed by laminating one or more pairs of an AlN layer and a GaN layer. The second buffer is formed of a GaN layer. A total Al composition of a pair of the first buffer and the second buffer on the compound semiconductor layer side is higher than that of a pair of the first buffer and the second buffer on the substrate side. | 10-18-2012 |
20120258578 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an epitaxial layer having a first conduction type, a base layer formed adjacent and on the epitaxial layer and having an opposite second conduction type to the first conduction type, a source layer formed selectively on the base layer and having the first conduction type, a trench which passes through the base layer and the source layer and which reaches the epitaxial layer, an insulation film formed along an interior wall of the trench, a control electrode formed within the trench via the insulation film, and a semiconductor region formed along the bottom part of the trench at the epitaxial layer and having the first conduction type. | 10-11-2012 |
20120248998 | LED DRIVER AND LED ILLUMINATOR HAVING THE SAME - An LED driver includes a power converter that includes a transformer having primary and secondary windings and a switching element connected to the primary winding and supplies power through the primary winding to an LED load, a feedback unit that is connected to the secondary winding and includes a control information detector to detect control information related to ON/OFF control of the switching element and a voltage detector to detect winding voltage information related to a voltage of the secondary winding, and a controller that carries out the ON/OFF control of the switching element. The feedback unit generates a feedback signal by superposing the control information onto the winding voltage information. The controller carries out the ON/OFF control of the switching element according to the feedback signal. | 10-04-2012 |
20120248565 | SWITCHING CIRCUIT INCLUDING NITRIDE SEMICONDUCTOR DEVICES - A switching circuit includes a switching device including the first and second main electrodes and a control electrode; and a driver including: a first rectifying device having an anode terminal connected to the first main electrode of the switching device; a first driving device having a first main electrode connected to a cathode terminal of the first rectifying device and a second main electrode connected to the control electrode of the switching device; a second driving device having a first main electrode connected to the control electrode of the switching device and a second main electrode connected to the second main electrode of the switching device; and input terminals receiving control signals inputted to a control electrode of the first driving device and a control electrode of the second driving device. | 10-04-2012 |
20120233474 | POWER SUPPLY AND CONTROL METHOD THEREOF - A first power supply is configured to feed power to a computer. The power supply includes a virtual machine management unit configured to transmit an instruction to any one of a second virtual host that is executed on the computer and a fourth virtual machine that is run in the second virtual host. Here, the fourth virtual machine is configured to control a virtualization management system including virtual hosts different from the second virtual host. | 09-13-2012 |
20120217581 | SEMICONDUCTOR DEVICE LIMITING ELECTRICAL DISCHARGE OF CHARGE - A semiconductor device includes a source region embedded in the surface of the second semiconductor region, a drain region embedded in the surface of the first semiconductor region separated from the second semiconductor region, a gate electrode located on the second semiconductor region, an insulation film located on the first semiconductor region between the second semiconductor region and the drain region, a voltage dividing element dividing the voltage between the gate electrode and the drain region, and a charge transfer limiting element limiting transfer of charge from the voltage dividing element to the drain region. | 08-30-2012 |
20120217546 | SEMICONDUCTOR DEVICE - An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode. | 08-30-2012 |
20120188797 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a first series circuit including a first switch element and a second switch element, a second series circuit including a resonant capacitor, a resonant reactor, and a primary winding of a transformer, a rectifying-smoothing circuit of a voltage of a secondary winding of the transformer, a controller of the first and second switch elements, a current detector detecting a current of the resonant capacitor Cri when the first switch element is ON, an integration circuit of the current of the current detector integrating the voltage signal over a period in which the voltage signal is equal to or greater than a first reference voltage, and an overcurrent protector of the first switch element if an output voltage of the integration circuit is equal to or greater than a second reference voltage. | 07-26-2012 |
20120187934 | DC-DC CONVERTER - A DC-DC converter includes: a high-side MOSFET as a main switching element which is driven by using a bootstrap capacitor; a low-side MOSFET as a synchronous rectifier, wherein a series circuit of the high-side MOSFET and the low-side MOSFET is connected to a DC power supply; and a coil and a smoothing capacitor, which are serially connected between the drain and the source of the low-side MOSFET; an overvoltage protection unit, which clamps an overvoltage; an overcurrent interrupting unit, which interrupts an overcurrent that flows when the overvoltage protection unit clamps the overvoltage; and a protection circuit, wherein the protection circuit includes: a differential-voltage detecting unit detecting the voltage of both ends of the bootstrap capacitor; and a control unit that, when the voltage detected by the differential-voltage detecting unit exceeds a predetermined value, turns OFF the low-side MOSFET and turns ON the high-side MOSFET. | 07-26-2012 |
20120181941 | LED DRIVING APPARATUS AND LED LIGHTING APPARATUS - An LED driving apparatus converts AC input power into predetermined DC output power and supplies the DC output power to an LED load. The LED driving apparatus includes a switching element Q | 07-19-2012 |
20120181577 | SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE HAVING MULTILAYERED NITRIDE SEMICONDUCTOR LAYER - A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction. | 07-19-2012 |
20120163047 | STARTUP CIRCUIT, SWITCHING POWER SOURCE IC, AND SWITCHING POWER SOURCE APPARATUS - A startup circuit includes a MOSFET that is connected between a startup power source and an auxiliary power source made of a smoothing capacitor and passes a startup current from the startup power source to the smoothing capacitor, a JFET that has a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET, and a pinch-off voltage controller that controls a pinch-off voltage of the JFET to a first reference voltage at startup and to a second reference voltage, which is lower than the first reference voltage, after startup. | 06-28-2012 |
20120161654 | CONSTANT CURRENT POWER SUPPLY DEVICE - A constant current power supply device according to the present invention includes: an error amplifier to amplify an error signal of an error voltage between a voltage of a current detection resistor and a reference voltage, and a second control circuit to sample and hold the error signal in an ON period of the external signal, output the error signal to a first control circuit, hold the error signal just before the external signal is turned from ON to OFF, increase an amplification ratio of the error amplifier by a predetermined magnification ratio in an OFF period of the external signal, and output the increased error signal to the first control circuit. | 06-28-2012 |
20120161640 | LED DRIVING APPARATUS - An LED driving apparatus that converts input power into direct-current power and feeds the power to an LED unit, includes: a first transistor that turns current flowing to the LED unit between on-and-off; an LED current detector that detects the current flowing to the LED unit; a controller that outputs a control signal controlling power to be fed to the LED unit, based on an error between a detected voltage obtained by the LED current detector and a burst dimming signal to dim the LED unit; and a second transistor that controls the power to be fed to the LED unit, based on the control signal output from the controller, wherein the first transistor is turned on; based on the burst dimming signal, and wherein the first transistor is turned off, based on a delay signal that is delayed at a predetermined time from the burst dimming signal. | 06-28-2012 |
20120146550 | LED DRIVE CIRCUIT - An LED drive circuit for driving an LED includes a reactor L | 06-14-2012 |
20120139589 | GATE DRIVER AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME - A gate driver for driving a gate of a switching element Tr | 06-07-2012 |
20120139512 | DC-DC CONVERTER - The present invention provides a DC-DC converter including: a first series circuit which is connected to the two ends of a direct-current power source Vi, and in which a first switching element Q | 06-07-2012 |
20120132962 | Method of Manufacturing Semiconductor Device and Semiconductor Device - A method of manufacturing a semiconductor device, in which a second semiconductor layer of Al | 05-31-2012 |
20120126287 | COMPOUND SEMICONDUCTOR DEVICE HAVING INSULATION FILM WITH DIFFERENT FILM THICKNESSES BENEATH ELECTRODES - A compound semiconductor device includes a group-III nitride semiconductor layer; an insulation film located on the group-III nitride semiconductor layer; a drain electrode located in a position which is a first distance away from an upper surface of the group-III nitride semiconductor layer; a source electrode located in a position which is the first distance away from the upper surface of the group-III nitride semiconductor layer; a gate electrode located between the drain electrode and the source electrode; and a field plate electrode located between the drain electrode and the gate electrode at a position which is a second distance away from the upper surface of the group-III nitride semiconductor layer, the second distance is shorter than the first distance. | 05-24-2012 |
20120126284 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 05-24-2012 |
20120119319 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor region and a second semiconductor region provided on a main surface of a substrate, being apart from each other and having first conductivity; a third semiconductor region provided between the first semiconductor region and the second semiconductor region and having second conductivity opposite to the first conductivity; a fourth semiconductor region provided on a main surface of the substrate, connected to the third semiconductor region, manufactured together with the third semiconductor region in the same manufacturing process, and having the conductivity same as that of the third semiconductor region; and trenches made on the main surface of the fourth semiconductor region and having a depth smaller than a junction depth of the fourth semiconductor region. | 05-17-2012 |
20120102492 | POWER SUPPLY AND CONTROL METHOD THEREOF - A power supply for feeding power to a computer comprises an instruction acquisition unit configured to acquire an identifier of a virtual machine and an instruction for the virtual machine, the virtual machine being run in emulation by a virtual host executed on the computer; and a virtual machine management unit configured to input an operation instruction for the virtual machine to the virtual machine on the basis of the acquisition by the instruction acquisition unit. | 04-26-2012 |
20120092910 | SWITCHING POWER SUPPLY APPARATUS - A switching power supply is provided to supply an AC input voltage. The supply includes a control circuit configured to detect a voltage of the AC power source in a voltage waveform, and switch elements in a synchronous rectification switching mode in synchronization with polarities of the voltage waveform when the AC input voltage is equal to or greater than a predetermined voltage value. The control unit also operates the switching without synchronization with the polarities when the AC input voltage is smaller than the predetermined voltage value. | 04-19-2012 |
20120091508 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes: a compound semiconductor layer; a source electrode; a drain electrode; a gate electrode; a field plate; and a low-conductivity region. The low-conductivity region is arranged within a region immediately below the field plate in a region where the two-dimensional carrier gas layer is formed, and has lower conductivity than a region above which the field plate or the gate electrode is not arranged in the region where the two-dimensional carrier gas layer is formed. | 04-19-2012 |
20120080724 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode. | 04-05-2012 |
20120075890 | GATE DRIVER AND SWITCHING POWER SOURCE APPARATUS - A gate driver of a switching element includes a first capacitor having a first end connected to a DC power source, a first switch having a first electrode connected to the first end of the first capacitor and a second electrode connected to a negative electrode of the DC power source, a second switch having a third electrode connected to the second electrode and the negative electrode of the DC power source and a fourth electrode connected to the first capacitor, a second capacitor connected in parallel with the third and fourth electrodes of the second switch and having a first end connected to the DC power source, and a negative voltage controller connecting the gate of the switching element to the second end of the first capacitor and a second end of the second capacitor when the switching element is turned off. | 03-29-2012 |
20120074922 | CURRENT SENSING CIRCUIT - A current sensing circuit can prevent operation error due to a rush current and/or a shifted sense ratio. The circuit includes a power MOSFET, a series combination of a sense resistor and a sense MOSFET, which are connected in parallel to the power MOSFET Qph, a delay circuit for delaying the edges of drive signal, by first delay time, a delay circuit for delaying the edges of the drive signal by a second delay time, logic for combining signals and a current sensing circuit for sensing an electric current of the sense MOSFET based on an electric current of the sense resistor. | 03-29-2012 |
20120063141 | LIGHTING DEVICE - A lighting device is provided to include a plurality of lens bodies. The connecting portion connecting the plurality of lens bodies includes a first major surface and a second major surface opposite to the first major surface. The first major surface is in contact with the lateral portion at a first contact under an outer edge of the leading lens. The second major surface is in contact with the lateral portion at a second contact located below the first contact. The first contact is located outside of a point of intersection along the first major surface with respect to the center of each lens body, the point of intersection at which an extraction of the first major surface intersects with an extension of a ray of the emitted light which is incident on the light incident surface and is projected on the second contact. | 03-15-2012 |
20120043949 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-23-2012 |
20120043588 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode. | 02-23-2012 |
20120036383 | POWER SUPPLY FOR NETWORKED HOST COMPUTERS AND CONTROL METHOD THEREOF - A power supply is used in combination with networked first and second hosts with a virtual machine implemented on the first host. The power supply is comprised of: a memory; an outlet part linked with outlets respectively supplying electricity to the hosts; a communication interface linked with the hosts; a controller linked with the memory, the outlet part and the communication interface; a migration process located on the memory, wherein the migration process causes the communication interface to send a migration instruction to the first host, the migration instruction causing migration of the virtual machine to the second host; and a shut-down process located on the memory, wherein the shut-down process causes the communication interface to send a shut-down instruction to the first host, the shut-down instruction causing shut-down of the first host. | 02-09-2012 |
20120034768 | METHOD OF MANUFACTURING SEMICONDUCTOR WAFER - A method of manufacturing a semiconductor wafer, which includes: a semiconductor substrate made of silicon and having both a central area and an outer periphery area; and a compound semiconductor layer made of a nitride-based semiconductor and formed on the semiconductor substrate, the method comprising: forming a growth inhibition layer to inhibit the compound semiconductor layer from growing on a tapered part provided in the outer periphery area of the semiconductor substrate; and growing the compound semiconductor layer on at least the central area of the semiconductor substrate, after the growth inhibition layer has been formed. | 02-09-2012 |
20120033451 | CONVERTER - A converter includes a rectifying circuit of an AC voltage of an AC power source into a rectified voltage, an input smoothing capacitor Ci, a first series circuit connected to the input smoothing capacitor and including a first and a second switching elements, a second series circuit connected to a connection point of the first and second switching elements and a first end of the input smoothing capacitor and including a primary winding of a transformer and a first capacitor Cri, a controller to alternately turn on/off the first and second switching elements, a rectifying-smoothing circuit (D | 02-09-2012 |
20120032661 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-09-2012 |
20120032660 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-09-2012 |
20120032232 | SEMICONDUCTOR DEVICE - A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode. | 02-09-2012 |
20120025725 | POWER CONVERTER - The present invention includes a first DC converter converting AC voltage, into DC voltage while correcting a power factor, and a second DC converter electrically isolating the first DC converter from an LED group load, and converting the DC voltage, into a predetermined DC voltage and supply the resultant voltage to the LED group load. The second DC converter includes a current detection circuit disposed on the secondary side, and detecting current flowing into the LED group load, an error amplifier amplifying an error between a detected current value detected and a reference current value, a signal transmission isolation element transmitting a control signal based on an output signal from the error amplifier, to the primary side, and a switching element transferring power to the secondary side through the transformer by being turned on/off according to the control signal. | 02-02-2012 |
20120014145 | STARTUP CIRCUIT - A startup circuit is installed in a switching power source apparatus. The startup circuit is configured to start up a controller with the use of a rectified voltage at startup of an AC power source and includes a detector (ZD | 01-19-2012 |
20120001226 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole. | 01-05-2012 |
20110309682 | SWITCHING POWER SUPPLY CIRCUIT - The present invention includes: a first series circuit which is connected between one end and the other end of a DC power supply, and in which a reactor, a first diode, and a first capacitor are connected in series; a first switching element connected between the one end of the DC power supply and a connection point between the reactor and the first diode; a second series circuit which is connected to the first diode in parallel, and in which a second switching element and a second capacitor are connected in series; and a control circuit configured to control the on and off of the second switching element in order that turn on of the first switching element becomes to zero-voltage switching. | 12-22-2011 |
20110304309 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 12-15-2011 |
20110301406 | ILLUMINATING APPARATUS AND CONTROL METHOD THEREOF - An illuminating apparatus | 12-08-2011 |
20110299310 | SYNCHRONOUS OPERATING SYSTEM FOR DISCHARGE TUBE LIGHTING APPARATUSES, DISCHARGE TUBE LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A synchronous operating system for operating a plurality of discharge tube lighting apparatuses at the same frequency and same phase includes (1) an oscillator of a triangular wave signal whose inclination for charging a capacitor C | 12-08-2011 |
20110299277 | ILLUMINATING APPARATUS AND METHOD OF CONTROLLING ILLUMINATING APPARATUS - An illuminating apparatus | 12-08-2011 |
20110285447 | DRIVE CIRCUIT - A drive circuit includes a transformer T | 11-24-2011 |
20110285307 | LED LIGHTING APPARATUS - An LED lighting apparatus includes a triac dimmer | 11-24-2011 |
20110284721 | ORGANIC ELECTROLUMINESCENCE ILLUMINATION DEVICE - An organic electroluminescence illumination device including: an organic electroluminescence panel including: a transparent substrate; a transparent electrode formed on the transparent substrate; an organic light emitting layer formed on the transparent electrode; and a metal electrode formed on the organic light emitting layer, wherein the organic light emitting layer comprises: an illumination area that is formed as a main light emitting area of the organic electroluminescence illumination device; a reference area, which is electrically-insulated from the illumination area; and a light receiving area, which is electrically-insulated from the illumination area and the reference area; and an organic light emitting layer driving part that drives individually the illumination area and the reference area, wherein the organic light emitting layer driving part detects current flowing in the light receiving area. | 11-24-2011 |
20110273913 | DC-DC CONVERTER - The present invention includes: a main switch Tr | 11-10-2011 |
20110265708 | METHOD OF HETEROEPITAXY - Epitaxy is carried out by immersing a single crystal substrate having a first principal surface, a second principal surface and a dislocation exposed on the first principal surface into an electrolytic solution including a cation of a metal having a melting point; carrying out electrolytic plating on the first principal surface to deposit the metal on the dislocation so as to cover the dislocation with the metal but leave a portion of the first principal surface where the dislocation is exposed uncovered with the metal; and causing epitaxy of a semiconductor layer on both the portion of the first principal surface and the metal covering the dislocation at a temperature below the melting point. | 11-03-2011 |
20110260777 | MONOLITHIC INTEGRATED CIRCUIT - A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate. | 10-27-2011 |
20110254056 | SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND RECTIFIER - A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode. | 10-20-2011 |
20110248638 | LED DRIVING APPARATUS - An LED driving apparatus comprises a power supply unit that includes a transformer having a primary coil and a plurality of secondary coils and outputs alternating power from the plurality of secondary coils; a current balancing unit and a first rectification smoothing unit connected to a first secondary coil of the plurality of secondary coils; an LED load group that includes a plurality of LEDs connected in series and to which power smoothed from the first rectification smoothing unit is supplied; a power control unit that controls power to be supplied to the first and second LED loads, based on currents flowing in the first and second LED loads; and a direct current load that is connected to both ends of a second secondary coil of the plurality of secondary coils. The power supplying unit controls the alternating power, based on the power supplied to the direct current load. | 10-13-2011 |
20110235383 | FREQUENCY SYNCHRONIZING METHOD FOR DISCHARGE TUBE LIGHTING APPARATUS, DISCHARGE TUBE LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - An oscillator generates a triangular wave signal whose inclination for charging a capacitor and inclination for discharging the same are the same and which is used to turn on/off FETs Qp | 09-29-2011 |
20110233758 | SEMICONDUCTOR DEVICE - A semiconductor devices includes a first die pad having the conductivity connected to one end of a DC power source, a second die pad having the conductivity connected to the other end of the DC power source, a first switching element provided on the first die pad, receiving DC power from the DC power source via the first die pad, and having a terminal opposite to the first die pad connected to a first output terminal, and a second switching element provided on the second die pad, receiving the DC power from the DC power source via the second die pad, and connected to the first output terminal, and having a terminal opposite to the second die pad. | 09-29-2011 |
20110233538 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes a compound semiconductor layer in which a two-dimensional carrier gas layer is formed, the compound semiconductor layer including a carrier travel layer and a carrier supply layer; first and second main electrodes, which are arranged apart from each other on the compound semiconductor layer, and are ohmically connected to the two-dimensional carrier gas layer; a metal oxide semiconductor film arranged on the compound semiconductor layer between the first main electrode and the second main electrode; and a control electrode arranged on the metal oxide semiconductor film, the control electrode including a titanium film that contacts the metal oxide semiconductor film or a titanium-containing compound film that contacts the metal oxide semiconductor film. | 09-29-2011 |
20110227640 | POWER SUPPLY DEVICE - In a power supplying system that includes a plurality of power supply devices, each of which has a backflow prevention circuit at an output side thereof, and supplies power to a load device, a backflow prevention circuit is configured by using a hetero-junction FET (HEMT). A normally-on type GaNFET is used for the hetero-junction FET (HEMT), so that the backflow prevention circuit is further simplified. | 09-22-2011 |
20110227630 | SWITCHING DEVICE FOR ELECTRIC CIRCUIT - A switching device has a main IGFET having a Schottky barrier diode D | 09-22-2011 |
20110215840 | GATE DRIVE CIRCUIT - A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate. | 09-08-2011 |
20110204488 | SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a silicon substrate and a laminate having a compound semiconductor layer; etching and removing a part of the laminate in a thickness direction to form trench regions in a grid, each trench region including a plurality of stripe grooves extending in parallel to each other; filling the groove with a material having a lower hardness than the compound semiconductor layer to form a buried region; and dividing the semiconductor wafer into a plurality of chips by dicing using a blade at a dicing line which is defined within the trench region and includes a plurality of the buried regions. | 08-25-2011 |
20110204417 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention including: a substrate; a compound semiconductor layer formed on the substrate; an element forming area provided in the compound semiconductor layer; and at least one semiconductor element, which includes a first main electrode and a main second electrode, wherein the at least one semiconductor element is formed in the element forming area, wherein the compound semiconductor layer includes: a first compound growth layer, which is formed on the substrate and includes the element forming area; and a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer | 08-25-2011 |
20110204379 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device including: a substrate; a nitride semiconductor layer formed on the substrate and having a heterojunction interface; and a recess portion formed on the nitride semiconductor layer, wherein the nitride semiconductor layer includes: a carrier transit layer, which has a composition represented by the formula: Al | 08-25-2011 |
20110194313 | ACTIVE SNUBBER CIRCUIT AND POWER SUPPLY CIRCUIT - An active snubber circuit for a switching power supply, in which a main switching element repeatedly operates an on-off operation so that current intermittently flows in a primary coil, has a capacitor for surge voltage absorption, a sub-switching element and a sub-control circuit controlling the sub-switching element. A circuit in which the capacitor for surge voltage absorption and the sub-switching element are connected in series is connected in parallel with the primary coil, and the sub-control circuit turns on the sub-switching element for a predetermined time period just after the main switching element is off. | 08-11-2011 |
20110188266 | SEMICONDUCTOR LIGHT EMITTING DEVICE, COMPOSITE LIGHT EMITTING DEVICE WITH ARRANGEMENT OF SEMICONDUCTOR LIGHT EMITTING DEVICES, AND PLANAR LIGHT SOURCE USING COMPOSITE LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a recess portion defined by a pair of opposing first side wall portions and a pair of opposing second side wall portions extending between the first side wall portions and shorter than the first side wall portions. Light emitting elements are arranged on the bottom surface of the recess portion in a direction of the first side wall portions. The light emitting elements include a first light emitting element for emitting light of a first color and a second light emitting element for emitting light of a second color different from the first color and placed closest to the second side wall portion among the light emitting elements. A resin portion containing a phosphor for wavelength-converting a part of the light of the second color into a complementary color of the light of the second color is filled into the recess portion. | 08-04-2011 |
20110176249 | SWITCHING APPARATUS AND CONTROLLING METHOD THEREOF - A switching apparatus includes a DC voltage output unit, a switching element to supply the DC voltage to a load, a power detection unit to detect power supplied from the switching element to the load, a drive unit to control the switching element in PWM manner according to an output from the power detection unit, and a stop unit to stop the PWM control if a value of the DC voltage is lower than a first threshold value. The first threshold value is lower than a minimum operation voltage value of the power detection unit. | 07-21-2011 |
20110157948 | CURRENT SOURCE INVERTER - A current source inverter includes an inverter having arm units and AC terminals, the numbers of the arm units and AC terminals being adapted to an AC load connected to the AC terminals. An upper arm is connected between a positive DC terminal and the corresponding AC terminal and has an upper arm switch Q | 06-30-2011 |
20110157938 | ALTERNATING CURRENT-DIRECT CURRENT CONVERTER DEVICE - In the present invention, switching circuits connected in middle points of power supply lines of a three-phase alternating-current power supply are switched to cause currents to intermittently flow on primary windings of a transformer, a voltage generated on a secondary winding is rectified and smoothed, and then is outputted to a load. The switching circuits each include: a series circuit including a first primary winding, a bidirectional switch and a second primary winding, which are connected in series in this order; a drive circuit power supply generating circuit generating a direct-current positive voltage and a direct-current negative voltage by use of an alternating-current power supply voltage applied between two ends of the series circuit; and a drive circuit performing on-off drive of the bidirectional switch. A reference potential point of the bidirectional switch is connected to a reference potential point of the drive circuit power supply generating circuit. | 06-30-2011 |
20110157931 | RESONANT POWER CONVERTER - The present invention provides a resonant power converter including: a first switch circuit in which multiple normally-off switches Q | 06-30-2011 |
20110156795 | BIDIRECTIONAL SWITCH - A bidirectional switch includes a semiconductor switch Q | 06-30-2011 |
20110140174 | COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A compound semiconductor device is comprised of: a compound semiconductor layer including a first active layer and a second active layer forming a hetero junction with the first active layer so as to naturally generate a two-dimensional carrier gas channel in the first active layer along the hetero junction; a first electrode formed on the second active layer; a second electrode in ohmic contact with the first active layer and isolated from the first electrode; and a channel modifier for locally changing a part of the first active layer under the channel modifier into a normally-off state, the channel modifier being formed on the second active layer so as to enclose but be isolated from the first electrode and the second electrode. | 06-16-2011 |
20110133561 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 06-09-2011 |
20110133249 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A high electron mobility transistor includes first, second and third compound semiconductor layers. The second compound semiconductor layer has a first interface with the first compound semiconductor layer. The third compound semiconductor layer is disposed over the first compound semiconductor layer. The third compound semiconductor layer has at least one of lower crystallinity and relaxed crystal structure as compared to the second compound semiconductor layer. The gate electrode is disposed over the third compound semiconductor layer. Source and drain electrodes are disposed over the second compound semiconductor layer. The two-dimensional carrier gas layer is generated in the first compound semiconductor layer. The two-dimensional carrier gas layer is adjacent to the first interface. The two-dimensional carrier gas layer either is absent under the third compound semiconductor layer or is reduced in at least one of thickens and carrier gas concentration under the third compound semiconductor layer. | 06-09-2011 |
20110115542 | LEVEL SHIFT CIRCUIT AND SWITCHING POWER SOURCE APPARATUS - A level shift circuit includes a first resistor connected to a level shift power source, a first transistor having a drain connected to a second end of the first resistor and a source to the ground, a second resistor connected to the level shift power source, a second transistor having a drain connected to a second end of the second resistor and a source to the ground, a pulse generator controlling ON/OFF of the first and second transistors according to an input signal, a control part generating a set signal if the first transistor is ON, a reset signal if the second transistor is ON, and no signal if there is no voltage difference between a voltage at the drain of the first transistor and a voltage at the drain of the second transistor, and a flip-flop providing an output signal according to the set and reset signals. | 05-19-2011 |
20110110068 | COMPOSITE SEMICONDUCTOR DEVICE - To provide a composite semiconductor device capable of preventing malfunction of preventing electrical circuits and contributing to miniaturization of a power converter. | 05-12-2011 |
20110103109 | AC POWER SOURCE APPARATUS - An AC power source apparatus includes a first AC voltage generator having a first switch set, to output a first AC voltage having a positive-negative asymmetrical waveform by turning on/off the first switch set to a first end of a load; a second AC voltage generator having a second switch set, to output a second AC voltage having a positive-negative asymmetrical waveform and a phase difference of 180 degrees with respect to the first AC voltage by turning on/off the second switch set to a second end of the load; and a control circuit to turn on/off the first switch set, and by setting a phase difference of 180 degrees with respect to the turning on/off of the first switch set, turn on/off the second switch set. A voltage across the load is an AC voltage having a positive-negative symmetrical waveform. | 05-05-2011 |
20110101943 | CURRENT DETECTOR - A current detector is comprised of a switch portion having an input node, an output node and a detection node, the switch portion being configured to selectively shift a power current between the input node and the output node and a detection current between the input node and the detection node; a current controller configured to control the detection current so as to equalize voltages at the detection node and the output node, the current controller being coupled with the detection node and the output node and including a transistor and a diode coupled to the transistor in series so as to prevent impression of negative voltage on the transistor, the transistor and the diode being formed within a single monolithic substrate; and a monitor current output portion having a monitor node and being coupled with the current controller, the monitor current output portion being configured to mirror the detection current in the current controller to the monitor node. | 05-05-2011 |
20110090716 | DC-DC CONVERTER WITH SNUBBER CIRCUIT - In order to achieve an object to reduce a surge voltage and suppress noise generation, the present invention provides a DC-DC converter with a snubber circuit, which boosts a voltage Vi of a DC power supply. The snubber circuit includes: a series circuit connected to both ends of a smoothing capacitor Co and including a snubber capacitor Cs and a snubber resistor Rs; a snubber diode Ds | 04-21-2011 |
20110089980 | CAPACITIVE LOAD DRIVER - A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance. | 04-21-2011 |
20110089919 | HIGH-SIDE DRIVER - A high-side driver has a semiconductor element being connected in series in a power supply path extending from a DC power source to a linear solenoid and turned on/off to control a current of the linear solenoid. The high-side driver includes a current detector of a current of the linear solenoid, a controller of the semiconductor element, a state detector of the high-side driver or the linear solenoid and output a state signal, a first transmit buffer to latch and output the state signal, a second transmit buffer to output the state signal without latching the same, and a transmit shift register to convert the state signal into serial data and transmit the serial data to an external device at predetermined timing. The state detector selects at least one of the first and second transmit buffers and outputs the state signal to the selected one. | 04-21-2011 |
20110075463 | POWER CONVERSION APPARATUS AND CONTROLLER THEREOF - A power conversion apparatus includes a converter having an input power source Vin, a reactor L | 03-31-2011 |
20110075450 | SWITCHING POWER SUPPLY DEVICE - During a soft start period at the time of startup, a PWM control is carried out. After the soft start period ends, the PWM control is converted into a frequency control, so that stress of a switching element is suppressed and the audible oscillation frequency is removed. As a result, it is possible to obtain a switching power supply device having high power conversion efficiency. | 03-31-2011 |
20110073938 | FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p | 03-31-2011 |
20110073911 | SEMICONDUCTOR DEVICE - A semiconductor device including: a substrate, which has a composition represented by the formula: Al | 03-31-2011 |
20110069514 | DC CONVERSION APPARATUS - A DC conversion apparatus includes a plurality of current resonant converters. Each of the current resonant converters has two switching elements connected in series, a transformer having primary and secondary windings, a series resonant circuit including a resonant reactor, the primary winding of the transformer, and a resonant capacitor, and a rectifying circuit to rectify a voltage generated by the secondary winding of the transformer. The DC conversion apparatus also includes a smoothing circuit having a reactor L | 03-24-2011 |
20110069510 | PLANAR LIGHT SOURCE DEVICE - A planar light source device ( | 03-24-2011 |
20110062438 | Field-Effect Semiconductor Device - A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current. | 03-17-2011 |
20110051474 | RESONANT POWER CONVERSION APPARATUS - A resonant power conversion apparatus includes a transformer T | 03-03-2011 |
20110051468 | SWITCHING POWER-SUPPLY APPARATUS - A switching power-supply apparatus includes a first converter | 03-03-2011 |
20110051467 | RESONANT SWITCHING POWER SUPPLY DEVICE - Provided is a resonant switching power supply device that can reduce a common mode noise as well as an increase in frequency when a load is light. | 03-03-2011 |
20110051462 | POWER FACTOR IMPROVEMENT CIRCUIT - An over-voltage protection circuit of the invention is connected with a DC-DC converter having a structure in which a plurality of switching elements is serially connected to a direct current output voltage terminal of a power factor improvement circuit. An output over-voltage detection resistance of a latch-type output over-voltage detection circuit is connected to a connection point at which the plurality of switching elements is connected. | 03-03-2011 |
20110050380 | COIL APPARATUS - A coil apparatus comprising: a core-insertion hole; a plurality of wiring layers including a first wiring layer and a second wiring layer; a coil pattern, which is formed on each of the plurality of wiring layers into a spiral shape around the core-insertion hole, wherein the coil patterns is connected in series and integrated so as to form a single coil formed of laminated wiring layers; and a slit, which divides at least part of each of the coil patterns formed on each of the respective the first wiring layer and the second wiring layer into a plurality of wiring patterns, wherein an outermost wiring pattern on the first wiring layer is connected to an innermost wiring pattern on the second wiring layer, and wherein an innermost wiring pattern on the first wiring layer is connected to an outermost wiring pattern on the second wiring layer. | 03-03-2011 |
20110018455 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus includes a resonant circuit ( | 01-27-2011 |
20110018101 | SEMICONDUCTOR DEVICE - A semiconductor device | 01-27-2011 |
20110012527 | SYNCHRONOUS OPERATION SYSTEM FOR DISCHARGE LAMP LIGHTING APPARATUSES, DISCHARGE LAMP LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF - Each of discharge lamp lighting apparatus that are connected to a common line includes a sawtooth-wave oscillator to generate a sawtooth signal for PWM-controlling a plurality of switching elements passing a current through a primary winding of a transformer and a capacitor of a resonant circuit connected to a discharge lamp, a PWM comparator controlling the plurality of switching elements according to the sawtooth signal, and a pulse synchronization circuit providing the common line with a synchronization pulse signal based on a pulse signal in relation to the sawtooth signal, and when receiving a synchronization pulse signal from the common line, synchronize the oscillation frequency of the sawtooth signal with the frequency of the synchronization pulse signal from the common line. So that a voltage of aligned frequency and phase is applied to one end of each discharge lamp. | 01-20-2011 |
20110007533 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit includes reactors L | 01-13-2011 |
20110007529 | DC-TO-DC CONVERTER - The present invention includes: a plurality of switching elements connected in series and connected between two ends of a DC power supply; a first control circuit to alternately turn on and off the switching elements in response to a constant oscillation frequency signal; a series circuit including a primary winding of a transformer and a capacitor connected together in series, and being connected to a connecting point between the switching elements, and to an end of the DC power supply; a rectifying/smoothing circuit to rectify and smooth a voltage in a secondary winding of the transformer thereby to output a DC voltage; a control switching element connected to two ends of the primary or secondary winding of the transformer; and a second control circuit to control the DC voltage at a predetermined voltage by turning on and off the control switching element. | 01-13-2011 |
20110006692 | APPARATUS FOR DRIVING CAPACITIVE LIGHT EMITTING DEVICE - A capacitive light emitting device includes: a capacitive light emitting device | 01-13-2011 |
20110002146 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple-output switching power source apparatus includes a control circuit to adjust a time for applying a DC voltage to a primary winding of a transformer by turning on/off a switching element Q | 01-06-2011 |
20100315842 | DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT - A drive circuit of first and second switches includes a first series circuit having a capacitor and a primary winding of a transformer and connected to both ends of a pulse signal generator, a first secondary winding of the transformer to apply a voltage to a control terminal of the first semiconductor switch based on the pulse signal, the first secondary winding being wound in a direction opposite to the primary winding, a second secondary winding of the transformer to apply a voltage to a control terminal of the second semiconductor switch based on the pulse signal, the second secondary winding being wound in the same direction to the primary winding, and a third semiconductor switch that turns on when the pulse signal is stopped, to shorten an ON period of the first semiconductor switch. | 12-16-2010 |
20100302817 | DC-DC CONVERTER - A DC-DC converter includes a plurality of switch elements connected in series between both ends of a DC power source, a series circuit of a primary winding of a transformer and a capacitor, connected between a connection point of the plurality of switch elements and an end of the DC power source, a rectifying-smoothing circuit to rectify and smooth a voltage generated by a secondary winding of the transformer into a DC voltage, and a controller to change a switching frequency of the plurality of switch elements according to a feedback signal generated from the DC voltage and alternately turn on/off the plurality of switch elements. The controller includes a nonlinear response unit | 12-02-2010 |
20100295471 | CURRENT BALANCING APPARATUS - A current balancing apparatus includes a power supply unit | 11-25-2010 |
20100270991 | DC-DC CONVERTER - A switching regulator for stepping down a DC input voltage to a DC output voltage, the switching regulator including: a switching element; a control circuit that controls activation or deactivation of the switching element; a voltage generation unit that steps down the DC input voltage and supplies the stepped down DC input voltage to the control circuit; and a switching unit that is configured to: supply the DC output voltage to the control unit when the DC output voltage is equal to or higher than a first reference voltage; and stop supply of the DC output voltage when the switching element is in an active state. | 10-28-2010 |
20100265741 | POWER FACTOR CORRECTING CONVERTER - A power factor correcting converter includes a DC-DC converter to convert a DC voltage, which is formed by rectifying an AC voltage of an AC power source through a rectifier, into a DC voltage of the DC-DC converter and a step-up converter to step up the DC voltage of the DC-DC converter. Secondary windings of a transformer Ta in the DC-DC converter are directly connected to the step-up converter. | 10-21-2010 |
20100264546 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film ( | 10-21-2010 |
20100244789 | INTERLEAVED CONVERTER - The present invention includes: an input voltage detector detecting an input voltage of a parallel converter and outputting an input voltage signal; an output voltage detector detecting an output voltage of the parallel converter; and a controller. The controller includes an error amplifier comparing the output voltage signal and a reference voltage and outputting an error amplification signal; an arithmetic operator generating an ON time signal and an OFF time signal based on the input and output voltage signals and the error amplification signal; a phase signal generator generating plural phase signals having different phases based on the ON and OFF time signals and the error amplification signal; a pulse generator generating plural pulse-train signals synchronized with the respective phase signals based on the ON time signal, the error amplification signal and the phase signals; and a driver driving the switching units in accordance with the pulse-train signals. | 09-30-2010 |
20100244183 | INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An integrated semiconductor device and method of manufacturing the same includes leaving one part of a semiconductor layer so that an inclined surface is formed on a trench when forming the trench on a SOI wafer. A thick silicon oxide film (second insulation film) is formed along this incline surface. This thick silicon oxide film prevents oxygen entering a boundary surface between an insulation layer and the semiconductor layer of the SOI wafer within the trench. | 09-30-2010 |
20100244096 | SEMICONDUCTOR DEVICE - A device includes a substrate; a buffer layer; and a device formation layer, wherein the buffer layer is formed by sequentially stacking, a plurality of times, a first nitride-based semiconductor layer made of a material having a lattice constant lower than a lattice constant of a material of the substrate; a first composition graded layer made of a material having a lattice constant gradually higher than the lattice constant of the first nitride-based semiconductor layer in a thickness direction; a second nitride-based semiconductor layer made of a material having a lattice constant higher than the lattice constant of the first nitride-based semiconductor layer; and a second composition graded layer made of a material having a lattice constant gradually lower than the lattice constant of the second nitride-based semiconductor layer in the thickness direction, and the second composition graded layer is thicker than the first composition graded layer. | 09-30-2010 |
20100244018 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A object is to provide a semiconductor device having normally-off characteristics and capable of easily suppressing field concentration below a side surface of a concave portion. A device includes a nitride-based semiconductor layer having a concave portion formed in a part of one principal surface, a side surface of the concave portion being slanted; a first electrode provided on the principal surface; a second electrode on an opposite side to the first electrode across the concave portion, and provided on the principal surface; an insulating layer formed on both sides of the concave portion in the principal surface; and | 09-30-2010 |
20100237802 | CURRENT BALANCING DEVICE, LED LIGHTING DEVICE, AND LCD B/L MODULE - A current balancing device includes: a power supply that outputs sinusoidal alternating-current; and a plurality of series circuits, each of the series circuits including a full-wave rectifier, one or more of windings, and one or more of loads in series connection, the full-wave rectifier connected to an output of the power supply and performing full-wave rectification for the alternating-current of the power supply. Currents flowing in the respective series circuits are balanced based on an electromagnetic force generated in one or more of the windings. | 09-23-2010 |
20100237792 | DISCHARGE TUBE POWER SUPPLY APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT - An AC conversion circuit includes a main transformer having a primary winding and a secondary winding to electrically insulate the AC power source side and the discharge tube side from each other, an IC | 09-23-2010 |
20100237387 | SEMICONDUCTOR WAFER, SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor wafer includes a substrate, a buffer region formed on one main surface of the substrate and formed from a compound semiconductor, and a main semiconductor region formed in the buffer region and formed from a compound semiconductor, wherein the buffer region includes a first multi-layer structured buffer region and a second multi-layer structured buffer region stacked with a plurality of alternating first layers and second layers, and a single layer structured buffer region arranged between the first multi-layer structured buffer region and the second multi-layer structured buffer region, the first layer is formed from a compound semiconductor which has a lattice constant smaller than a lattice constant of a material which forms the substrate, the second layer is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the substrate and a lattice constant of a material which forms the first layer, and wherein the single layer structured buffer region is thicker than the first layer and the second layer, and is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the first layer and a lattice constant of a material which forms the second layer. | 09-23-2010 |
20100237385 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer and being in the shape of an island on the second semiconductor layer, a dielectric film on the second and third semiconductor layers, a control electrode on the dielectric film, a first main electrode electrically connected to the second and third semiconductor layers, and a second main electrode electrically connected to the first semiconductor layer and having a Pd layer. | 09-23-2010 |
20100232184 | DC CONVERTER - A DC converter includes: a transformer (T | 09-16-2010 |
20100231827 | LIQUID CRYSTAL DISPLAY APPARATUS AND ILLUMINATING APPARATUS THEREFOR - An LCD apparatus includes an LCD panel to display an image and an LED backlight to illuminate the LCD panel from behind. The LCD panel has first sections divided in a vertical direction and second sections divided in a horizontal direction. The LED backlight includes an LED light source and an edge-type light guide. The LED light source includes LEDs that are arranged along at least one of upper and lower sides of the light guide and are allocated to the second sections, respectively. A brightness of an image displayed in a given second section is used to control a light quantity of the corresponding LED. Each LED radially emits light so that light beams from adjacent ones of the LEDs intersect each other. | 09-16-2010 |
20100230746 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an epitaxial layer having a first conduction type, a base layer formed adjacent and on the epitaxial layer and having an opposite second conduction type to the first conduction type, a source layer formed selectively on the base layer and having the first conduction type, a trench which passes through the base layer and the source layer and which reaches the epitaxial layer, an insulation film formed along an interior wall of the trench, a control electrode formed within the trench via the insulation film, and a semiconductor region formed along the bottom part of the trench at the epitaxial layer and having the first conduction type. | 09-16-2010 |
20100225286 | POWER SOURCE APPARATUS - A power source apparatus includes a first converter having a reactor L | 09-09-2010 |
20100220505 | DC/DC CONVERTER - A DC/DC converter has three half-bridge-type current resonant DC/DC converters that are connected in parallel, have a phase difference of 120 degrees, and are operated at a frequency higher than a resonant frequency. Each of the three half-bridge-type current resonant DC/DC converters includes a transformer having a primary winding, a secondary winding, and a tertiary winding, a series circuit connected to both ends of a DC power source and including first and second switching elements, a series circuit connected to both ends of the first or second switching element and including a resonant reactor, the primary winding of the transformer, and a resonant capacitor, and a rectifying circuit to rectify a voltage generated by the secondary winding and output the rectified voltage to a smoothing capacitor. The tertiary windings are annularly connected to a reactor. | 09-02-2010 |
20100214210 | CURRENT BALANCING DEVICE, LED LIGHTING APPARATUS, LCD BACKLIGHT MODULE, AND LCD DISPLAY UNIT - The present invention includes: a power supply unit | 08-26-2010 |
20100194199 | CURRENT BALANCING APPARATUS, CURRENT BALANCING METHOD, AND POWER SUPPLY APPARATUS - A current balancing apparatus includes a first transformer having a first primary winding and a first secondary winding electromagnetically coupled with the first primary winding, the first primary winding having a first end connected to a first load that passes a first current; a second transformer having a second primary winding and a second secondary winding electromagnetically coupled with the second primary winding, the second primary winding having a first end connected to a second load that passes a second current having an AC component substantially having a 180-degree phase difference with respect to the first current; and a series circuit including the first secondary winding, the second secondary winding, and a current smoother, to balance the first current and second current with each other. | 08-05-2010 |
20100193842 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 08-05-2010 |
20100188874 | AC - DC CONVERTER - AC-DC converter is provided which comprises an auxiliary winding | 07-29-2010 |
20100187603 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which can relax the electric field in the junction termination region, and can achieve a high breakdown voltage. | 07-29-2010 |
20100186704 | DIESEL ENGINE START-UP ASSISTING DEVICE - A diesel engine start-up assisting device includes a plurality of first-and-second switching elements | 07-29-2010 |
20100182810 | ALTERNATING-CURRENT POWER SUPPLY DEVICE - An alternating-current power supply device includes: a direct-current power supply Vin; a transformer T | 07-22-2010 |
20100182808 | SWITCHING POWER SOURCE DEVICE - A pseudo-resonant switching power source device is provided which comprises a primary winding | 07-22-2010 |
20100172159 | MULTIPLE-OUTPUT SWITCHING POWER SUPPLY UNIT - A multiple-output switching power supply unit includes: a voltage generating circuit Q | 07-08-2010 |
20100171433 | LUMINESCENT LAMP LIGHTING DEVICE - A luminescent lamp lighting device includes a plurality of switch circuits | 07-08-2010 |
20100164392 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus is inexpensive and is capable of generally relaxing an unevenness of brightness caused by a brightness gradient of a discharge lamp. The apparatus includes an inverter | 07-01-2010 |
20100164385 | DISCHARGE LAMP LIGHTING DEVICE - A discharge lamp lighting device is provided to comprise tube current detecting circuits | 07-01-2010 |